CN108827554A - A kind of transistor hermetization testing method - Google Patents
A kind of transistor hermetization testing method Download PDFInfo
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- CN108827554A CN108827554A CN201810660240.2A CN201810660240A CN108827554A CN 108827554 A CN108827554 A CN 108827554A CN 201810660240 A CN201810660240 A CN 201810660240A CN 108827554 A CN108827554 A CN 108827554A
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- transistor
- sealing container
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
- G01M3/20—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material
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- General Physics & Mathematics (AREA)
- Examining Or Testing Airtightness (AREA)
Abstract
A kind of transistor hermetization testing method proposed by the present invention, includes the following steps：S1, transistor to be detected is placed in a sealed container, then vacuumizes sealing container；S2, alcohol gas is filled into sealing container, until the pressure of sealed container interior reaches preset first threshold；S3, to sealing container input air while be exhausted, until the alcohol content in sealing container reaches preset first concentration value, should during the pressure in sealing container is maintained to the state of first threshold always；S4, after heating preset first time threshold to sealing container, the alcohol content detected in sealing container again is denoted as the second concentration value；S5, the second concentration value is compared with the first concentration value, and judges the leakproofness of crystal to be detected according to comparison result.It in the present invention, when testing transistor, does not need directly to contact transistor, is conducive to save the unnecessary loss of transistor.
Description
Technical field
The present invention relates to sealing propertytest technical field more particularly to a kind of transistor hermetization testing methods.
Background technique
Transistor is a kind of very common electronic component, very widely used.Transistor is once a leak occurs, not only property
It can reduce, and likely result in circuit damage risk, so, transistor has to the detection of being sealed property before factory.
Summary of the invention
Technical problems based on background technology, the invention proposes a kind of transistor hermetization testing methods.
A kind of transistor hermetization testing method proposed by the present invention, includes the following steps：
S1, transistor to be detected is placed in a sealed container, then vacuumizes sealing container；
S2, alcohol gas is filled into sealing container, until the pressure of sealed container interior reaches preset first threshold；
S3, to sealing container input air while be exhausted, until the alcohol content in sealing container reaches default
The first concentration value, should during the pressure in sealing container is maintained to the state of first threshold always；
S4, after heating preset first time threshold to sealing container, the alcohol content note in sealing container is detected again
For the second concentration value；
S5, the second concentration value is compared with the first concentration value, and the close of crystal to be detected is judged according to comparison result
Feng Xing.
Preferably, step S5 is specially：Second concentration value is compared with the first concentration value, if the second concentration value is big
In the first concentration value, then judge that crystal composite pipe tightness is unqualified；Conversely, then qualified.
Preferably, in step S4, sealing container is carried out in heating process, heating temperature is higher than room temperature and is lower than or waits
In the maximum operating temperature of transistor to be detected.
Preferably, in step S3, the pressure in sealing container is after first threshold maintains the second time value again to sealing
Container input air is simultaneously vented simultaneously.
A kind of transistor hermetization testing method proposed by the present invention, builds independent test wrapper by sealing container first
Border, then passes through the inside and outside connectivity of negative pressure and alcohol gas test transistor, i.e. whether test transistor leaks.The present invention
In, it when testing transistor, does not need directly to contact transistor, is conducive to save the unnecessary loss of transistor.
Detailed description of the invention
Fig. 1 is a kind of transistor hermetization testing method flow chart proposed by the present invention.
Specific embodiment
Referring to Fig.1, a kind of transistor hermetization testing method proposed by the present invention, includes the following steps.
S1, transistor to be detected is placed in a sealed container, then vacuumizes sealing container.In this step, pass through
Subnormal ambient in sealing container, if transistor leakage, transistor internal is also evacuated；, whereas if transistor is close
Envelope property is qualified, then the subnormal ambient in sealing container will not have any impact to transistor.
S2, alcohol gas is filled into sealing container, until the pressure of sealed container interior reaches preset first threshold.
In this step, if transistor leakage, as the air pressure in sealing container rises, alcohol gas can also enter transistor.
S3, to sealing container input air while be exhausted, until the alcohol content in sealing container reaches default
The first concentration value, should during the pressure in sealing container is maintained to the state of first threshold always.This step is actually
The alcohol gas in sealing container is replaced in the case where maintaining invariablenes pressure of liquid in sealing container.Due to invariablenes pressure of liquid,
So in replacement process, the alcohol gas in the transistor of leakage will not be discharged, herein under the premise of, can be real by gas displacement
Gas componant difference inside and outside existing transistor.
In this step S3, the pressure in sealing container is defeated to sealing container again after first threshold maintains the second time value
Enter air and is vented simultaneously, with the transistor that the alcohol gas guaranteed in sealing container has time enough to be filled into leakage,
Guarantee the air pressure constant inside and outside transistor.
S4, after heating preset first time threshold to sealing container, the alcohol content note in sealing container is detected again
For the second concentration value.In this step, sealing container is carried out in heating process, heating temperature is higher than room temperature and is below or equal to
The maximum operating temperature of transistor to be detected, in order to avoid damage transistor.
S5, the second concentration value is compared with the first concentration value, and the close of crystal to be detected is judged according to comparison result
Feng Xing.
Due to the volatile feature of alcohol gas, after being heated in this step to alcohol gas, the wine of transistor internal
Essence when gases are heated, they expand volume is greater than the air swelling volume in sealing container, so, the alcohol gas in transistor is diffused into
In sealing container, so that the alcohol concentration in sealing container increases.So in present embodiment, if the second concentration value is greater than
First concentration value, then illustrate transistor leakage, i.e. crystal composite pipe tightness is unqualified；, whereas if the second concentration value is equal to first
Concentration value, then transistor is not revealed, and leakproofness is qualified.
The above, preferable specific embodiment only of the present invention, but protection scope of the present invention not office
Be limited to this, anyone skilled in the art in the technical scope disclosed by the present invention, technology according to the present invention
Scheme and its inventive concept are subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (4)
1. a kind of transistor hermetization testing method, which is characterized in that include the following steps：
S1, transistor to be detected is placed in a sealed container, then vacuumizes sealing container；
S2, alcohol gas is filled into sealing container, until the pressure of sealed container interior reaches preset first threshold；
S3, to sealing container input air while be exhausted, until the alcohol content in sealing container reaches preset the
Pressure in sealing container is maintained the state of first threshold by one concentration value always during being somebody's turn to do；
S4, after heating preset first time threshold to sealing container, the alcohol content in sealing container is detected again and is denoted as the
Two concentration values；
S5, the second concentration value is compared with the first concentration value, and judges the leakproofness of crystal to be detected according to comparison result.
2. transistor hermetization testing method as described in claim 1, which is characterized in that step S5 is specially：By the second concentration
Value is compared with the first concentration value, if the second concentration value is greater than the first concentration value, judges that crystal composite pipe tightness is unqualified；
Conversely, then qualified.
3. transistor hermetization testing method as described in claim 1, which is characterized in that in step S4, carried out to sealing container
In heating process, heating temperature is higher than room temperature and is below or equal to the maximum operating temperature of transistor to be detected.
4. the transistor hermetization testing method as described in claims 1 or 2 or 3, which is characterized in that in step S3, hold in sealing
Pressure in device is simultaneously vented to sealing container input air simultaneously again after first threshold maintains the second time value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810660240.2A CN108827554A (en) | 2018-06-25 | 2018-06-25 | A kind of transistor hermetization testing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810660240.2A CN108827554A (en) | 2018-06-25 | 2018-06-25 | A kind of transistor hermetization testing method |
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| CN108827554A true CN108827554A (en) | 2018-11-16 |
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| CN201810660240.2A Pending CN108827554A (en) | 2018-06-25 | 2018-06-25 | A kind of transistor hermetization testing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111272351A (en) * | 2020-03-19 | 2020-06-12 | 中国工程物理研究院激光聚变研究中心 | Vacuum system leakage point rapid non-contact detection method |
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| CN104483080B (en) * | 2014-12-11 | 2017-06-06 | 楚天科技股份有限公司 | Method for detecting bottle stopper sealing |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111272351A (en) * | 2020-03-19 | 2020-06-12 | 中国工程物理研究院激光聚变研究中心 | Vacuum system leakage point rapid non-contact detection method |
| CN111272351B (en) * | 2020-03-19 | 2021-08-20 | 中国工程物理研究院激光聚变研究中心 | Vacuum system leakage point rapid non-contact detection method |
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Application publication date: 20181116 |