CN108823530A - A kind of composite phase-change thin-film material（Si/Ge2Sb2Te5/Si）nPreparation method - Google Patents
A kind of composite phase-change thin-film material（Si/Ge2Sb2Te5/Si）nPreparation method Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Abstract
The invention discloses a kind of composite phase-change thin-film materials（Si/Ge2Sb2Te5/Si）nPreparation method, prepared using magnetron sputtering method, thin-film material is by 10 groups of Si/Ge2Sb2Te5/ Si laminated film unit composition, each group of laminated film unit include two layers of Si nano thin-film and one layer of Ge2Sb2Te5Nano thin-film.Si-Ge is utilized in composite phase-change thin-film material of the invention2Sb2Te5Interfacial effect and stress regulation and control phase-change characteristic, the Si nano thin-film used has relatively high coefficient of thermal expansion, to Ge in temperature-rise period2Sb2Te5A tensile stress is provided, and in Ge2Sb2Te5The contraction of its structure is hindered when phase transformation, so as to significantly regulate and control Ge2Sb2Te5Phase transition temperature and transformation rate, can be realized the regulation of crystallization temperature, crystalline rate, thermal stability, data retention, while crystalline resistance can be regulated and controled.
Description
The application is application No. is 201510923584.4, and the applying date is on December 14th, 2015, and invention and created name is
" composite phase-change thin-film material（Si/Ge2Sb2Te5/Si）nAnd preparation method thereof " application for a patent for invention divisional application.
Technical field
The present invention relates to the phase change film materials of microelectronics technology, and in particular to a kind of composite phase-change thin-film material
（Si/Ge2Sb2Te5/Si）nPreparation method.
Background technique
As multi-media Computer Network is in the extension in the whole world and universal, the exploitation and research of storage medium increasingly by
The attention of people.Ge2Sb2Te5（Abbreviation GST）It is the phase-change material of current acknowledged, most study, maturation the most, extremely
Meet the demand of commercial memory.But Ge2Sb2Te5Still there are many property defects or insufficient urgently to be resolved at present, lower
Crystallization temperature and poor thermal stability make the data retention of GST unsatisfactory, exist many to be improved and improve
Place（Loke, D. etc., Science, 2012,336（6088）: 1566）.For example, Ge2Sb2Te5The crystallization temperature of film
It only 160 DEG C or so, is only capable of under 85 DEG C of environment temperature keeping data 10 years, secondly, Ge2Sb2Te5Film is with forming core
Main crystallization Mechanism makes its phase velocity slower, is unable to satisfy the message storage requirement of the following high speed, big data era.These
Problem hinders its further industrialization.
People are to Ge2Sb2Te5A variety of different optimization methods are proposed, such as by doping other elements or at two layers
Ge2Sb2Te5Between intert other film layers to be modified.
About the mode of doping other elements, 101109056 B of Chinese patent literature CN（Application number
200710042918.2）Disclose a kind of aluminum-doping phase transiting thin-film material Alx（Ge2Sb2Te5）100-x, wherein 0 x≤5 <, preparation
When use magnetron sputtering coating system, by metallic aluminium target and Ge2Sb2Te5Target be separately mounted to a magnetic control d.c. sputtering target and
In one magnetron RF sputtering system target, realize film in the phase transformation of each warm area by annealing.
About in two layers of Ge2Sb2Te5Between intert other film layers the mode that is modified, Chinese patent literature CN
102832340 B（Application number 201210335211.1）Disclose a kind of phase-changing memory unit, including Ge-Sb-Te phase transformation material
The bed of material interts in the Ge-Sb-Te phase-change material layers and arrives the Sb film that phase-change material crystallizes again equipped with multilayer；Preparation method is
1）The depositing Ge-Sb-Te phase-change material layers on preparing heating electrode substrate；2）It is deposited on the Ge-Sb-Te phase-change material layers
Sb film；3）Another Ge-Sb-Te phase-change material layers are deposited on the Sb film；4）Repeat step 2）To step 3）N times, n are
Integer.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of transformation rate, thermal stability for phase transition storage can
The composite phase-change thin-film material of control（Si/Ge2Sb2Te5/Si）nPreparation method.
The technical solution for realizing the object of the invention is a kind of composite phase-change thin-film material（Si/Ge2Sb2Te5/Si）nPreparation
Method, the composite phase-change thin-film material is by 10 groups of Si/Ge2Sb2Te5/ Si laminated film unit composition, each group of laminated film
Unit includes two layers of Si nano thin-film and one layer of Ge2Sb2Te5Nano thin-film, Ge2Sb2Te5The both side surface of film is complete by Si film
Full cladding；Two groups of adjacent Si/Ge2Sb2Te5One layer of Si film of/Si laminated film units shared.
Above-mentioned composition composite phase-change thin-film material（Si/Ge2Sb2Te5/Si）nSi nano thin-film with a thickness of 5nm,
Ge2Sb2Te5Nano thin-film with a thickness of 5nm.
Preparation method includes the following steps：
1. it is stand-by to be cleaned drying by the preparation of substrate for substrate.
2. the preparation of magnetron sputtering, by step, 1. clean substrate to be sputtered is placed on base, by Si and
Ge2Sb2Te5It is separately mounted in magnetron RF sputtering system target as sputtering target material, and by the sputtering chamber of magnetron sputtering coating system
It is vacuumized, uses high-purity argon gas as sputter gas.
3. magnetron sputtering prepares [Si（x）/Ge2Sb2Te5（x）/Si（x）] nMulti-layer compound film, first cleaning Si target and
Ge2Sb2Te5Substrate to be sputtered after cleaning, is rotated to Si target position, Si film is obtained after sputtering by target material surface
Layer；After the completion of the sputtering of Si film layer, the substrate for having sputtered Si film layer is rotated into Ge2Sb2Te5Target position, after sputtering
Obtain Ge2Sb2Te5Film layer；Repeat above-mentioned sputtering Si layers and Ge2Sb2Te5Operation n-1 times of layer, then at one layer of most surface
Ge2Sb2Te5One layer of Si film is sputtered on film again to get [Si is arrived（x）/Ge2Sb2Te5（x）/Si（x）] nComposite phase-change film material
Material.
3. middle Si layers of sputter rate are 0.46nm/s, sputtering time 11s, Ge to above-mentioned steps2Sb2Te5Layer sputter rate be
0.4nm/s, sputtering time 13s.
The present invention has the effect of positive：Composite phase-change thin-film material of the invention（Si/Ge2Sb2Te5/Si）nBy n group
Si/Ge2Sb2Te5/ Si laminated film unit composition, each group of laminated film unit include two layers of Si nano thin-film and one layer
Ge2Sb2Te5Nano thin-film, Ge2Sb2Te5The both side surface of film is coated completely by Si film；Two groups of adjacent Si/
Ge2Sb2Te5One layer of Si film of/Si laminated film units shared；Contain n-layer in composite phase-change thin-film material altogether in other words
Ge2Sb2Te5Film, each layer of Ge2Sb2Te5The two sides of film are all coated by one layer of Si film completely.
Traditional Ge2Sb2Te5Phase-change material has the characteristics that lower coefficient of thermal expansion and easy deformation, undergoes first after heating
Slowly thermal expansion, therewith in phase transition temperature（About 160 DEG C）Violent structural phase transition nearby occurs and is received with volume sharply
Contracting effect.
Composite phase-change thin-film material of the invention（Si/Ge2Sb2Te5/Si）nHave with amorphous and polycrystalline structure, and all
Independent Si phase and Ge2Sb2Te5Phase；Composite phase-change thin-film material of the invention can provide energy in outside（Or heating）Feelings
Reversible amorphous and polycrystalline structure phase transformation are realized under condition, are supervened reversible high resistant and low resistance state and are turned.
Composite phase-change thin-film material of the invention（Si/Ge2Sb2Te5/Si）nSi-Ge is utilized2Sb2Te5Interfacial effect with
Stress regulation and control phase-change characteristic, the Si nano thin-film used has relatively high coefficient of thermal expansion, right in temperature-rise period
Ge2Sb2Te5A tensile stress is provided, and in Ge2Sb2Te5The contraction of its structure is hindered when phase transformation, so as to significantly regulate and control
Ge2Sb2Te5Phase transition temperature and transformation rate, therefore composite phase-change thin-film material of the invention is due to Si/Ge2Sb2Te5Interface
Si and Ge in the presence of effect, and heating, phase transition process2Sb2Te5The mismatch of coefficient of thermal expansion leads to the stress generated at interface
Effect shows to be different from Ge2Sb2Te5Phase transition temperature and transformation rate, have excellent, reliable and controllable phase transition performance,
It can be realized the regulation of crystallization temperature, crystalline rate, thermal stability, data retention, while crystalline resistance can also be regulated and controled.
Detailed description of the invention
Fig. 1 is composite phase-change thin-film material of the invention（Si/Ge2Sb2Te5/Si）nStructural schematic diagram；
Fig. 2 is resistance and temperature curve of the composite phase-change thin-film material of embodiment 1 under different heating rates；
Fig. 3 is the resistance and temperature curve of composite phase-change thin-film material of the invention under different-thickness；
Fig. 4 is the activation energy of composite phase-change thin-film material of the invention under different-thickness；
Fig. 5 is the data retention of composite phase-change thin-film material of the invention under different-thickness；
Fig. 6 is the Raman characteristic of composite phase-change thin-film material of the invention under different-thickness；
Label in above-mentioned attached drawing is as follows：Substrate 1, Si nano thin-film 2, Ge2Sb2Te5Nano thin-film 3.
Specific embodiment
（Embodiment 1）
See Fig. 1, the composite phase-change thin-film material of the present embodiment（Si/Ge2Sb2Te5/Si）nFor multi-layer film structure, by n group Si/
Ge2Sb2Te5/ Si laminated film unit composition, each group of laminated film unit include two layers of Si nano thin-film 2（Hereinafter referred to as Si
Film）With one layer of Ge2Sb2Te5Nano thin-film 3（Hereinafter referred to as Ge2Sb2Te5Film）, Ge2Sb2Te5The both side surface of film 3 by
Si film 2 coats completely；Two groups of adjacent Si/Ge2Sb2Te5One layer of Si film 2 of/Si laminated film units shared；It is multiple in other words
It closes and contains n-layer Ge in phase change film material altogether2Sb2Te5Film 3, each layer of Ge2Sb2Te5The two sides of film 3 are all by one layer
Si film 2 coats completely.
Form composite phase-change thin-film material（Si/Ge2Sb2Te5/Si）nThe thickness of all Si nano thin-films 2 and all
Ge2Sb2Te5The thickness of nano thin-film 3 is identical, Si nano thin-film 2 with a thickness of 2nm~10nm, Ge2Sb2Te5Nano thin-film 3
With a thickness of 2nm~10nm.99.999% or more Si content, Ge in Si nano thin-film 22Sb2Te5Ge in nano thin-film 32Sb2Te5Contain
99.999% or more amount.
Above-mentioned composite phase-change thin-film material（Si/Ge2Sb2Te5/Si）nMembrane structure general formula [Si（x）/Ge2Sb2Te5
（x）/Si（x）] nIt indicates, wherein x is single layer Si film layer and Ge2Sb2Te5The thickness of film, 2nm≤x≤10nm, n Si/
Ge2Sb2Te5The group number of/Si laminated film unit, n are positive integer.
The composite phase-change thin-film material of the present embodiment（Si/Ge2Sb2Te5/Si）nFor [Si（10nm）/Ge2Sb2Te5
（10nm）/Si（10nm）]10, using Si and Ge2Sb2Te5As target, alternating sputtering is made.
Specific preparation method includes the following steps：
1. the preparation of substrate.Choose the SiO having a size of 5mm × 5mm2/Si（100）Substrate 1, first by substrate in supersonic cleaning machine
In acetone（Purity is 99% or more）Middle ultrasonic cleaning 3~5 minutes, washes complete taking-up and is rinsed with deionized water；Then it is being cleaned by ultrasonic
By substrate in ethyl alcohol in machine（Purity is 99% or more）Middle ultrasonic cleaning 3~5 minutes, washes complete taking-up and is rinsed with deionized water, rinses
High-purity N is used after clean2Dry up surface and the back side；Substrate after drying, which is sent into baking oven, dries steam, and the substrate after drying is stand-by,
Wherein oven temperature is set as 120 DEG C, drying time 20 minutes.
2. the preparation of magnetron sputtering.
In magnetron sputtering coating system（JGP-450 type）In, 1. SiO to be sputtered that step is prepared2/Si（100）Base
Piece is placed on base, by Si（Atomic percent 99.999%）And Ge2Sb2Te5Alloy（Purity 99.999%）As sputtering target material
It is separately mounted to magnetic control radio frequency（RF）In sputtering target, and the sputtering chamber of magnetron sputtering coating system vacuumize until chamber
House vacuum degree reaches 1 × 10-4 Pa。
Use high-purity argon gas（Percent by volume reaches 99.999%）As sputter gas, set Ar throughput as 25~
35SCCM（It is 30SCCM in the present embodiment）, and sputtering pressure is adjusted to 0.15~0.4Pa（It is 0.4Pa in the present embodiment）.
The sputtering power of radio-frequency power supply is set as 25W~35W（It is 30W in the present embodiment）.
3. magnetron sputtering prepares composite phase-change thin-film material [Si（x）/Ge2Sb2Te5（x）/Si（x）] n。
Si target and Sb target material surface are cleaned first.Space base support is rotated into Si target position, opens the direct current on Si target position
Source sets sputtering time 100s, starts to sputter Si target material surface, cleans Si target material surface；Si target material surface has cleaned
Space base support is directly rotated to Ge by Bi Hou, the DC power supply that do not close on Si target position2Sb2Te5Target position opens Ge2Sb2Te5Target position
On radio-frequency power supply, set sputtering time 100s, start to Ge2Sb2Te5Target material surface is sputtered, and Ge is cleaned2Sb2Te5Target
Surface, Ge2Sb2Te5After target material surface cleans, by SiO to be sputtered2/Si（100）Substrate rotates to Si target position.
Then start to sputter first group of Si/Ge2Sb2Te5The Si film of/Si laminated film unit：Si layers of sputtering speed when sputtering
Rate is 0.46nm/s, sputtering time 22s, and the Si film of 10nm thickness is obtained after sputtering.
After the completion of Si thin film sputtering, the substrate for having sputtered Si film is rotated into Ge2Sb2Te5Target position, setting
Ge2Sb2Te5Layer sputter rate is 0.4nm/s, and sputtering time 25s obtains the Ge of 10nm thickness after sputtering2Sb2Te5Film.
Sputtering one layer of Si film and one layer of Ge2Sb2Te5On the substrate of film repeat above-mentioned sputtering Si layer with
Ge2Sb2Te5Operation 9 times of layer, then in one layer of most surface of Ge2Sb2Te5One layer of Si film is sputtered on film again to get arriving
[Si（10nm）/Ge2Sb2Te5（10nm）/Si（10nm）]10Composite phase-change thin-film material.
Under the premise of overall thickness is fixed, for the film of a certain determining periodicity, by controlling Si and Ge2Sb2Te5Target
The sputtering time of material adjusts Si and Ge in the film period2Sb2Te5The thickness of single thin film, thus the phase transformation of structure needed for being formed
Thin-film material.
（Embodiment 2）
The composite phase-change thin-film material of the present embodiment（Si/Ge2Sb2Te5/Si）nFor [Si（8nm）/Ge2Sb2Te5（8nm）/Si
（8nm）]10。
Remaining is same as Example 1 for preparation method, the difference is that：3. magnetron sputtering prepares [Si to step（8nm）/
Ge2Sb2Te5（8nm）/Si（8nm）]10When multi-layer compound film, the sputtering time of each layer of Si film is 17s, each layer
Ge2Sb2Te5The sputtering time of film is 20s.
（Embodiment 3）
The composite phase-change thin-film material of the present embodiment（Si/Ge2Sb2Te5/Si）nFor [Si（6nm）/Ge2Sb2Te5（6nm）/Si
（6nm）]10。
Remaining is same as Example 1 for preparation method, the difference is that：3. magnetron sputtering prepares [Si to step（6nm）/
Ge2Sb2Te5（6nm）/Si（6nm）]10When multi-layer compound film, the sputtering time of each layer of Si film is 13s, each layer
Ge2Sb2Te5The sputtering time of film is 15s.
（Embodiment 4）
The composite phase-change thin-film material of the present embodiment（Si/Ge2Sb2Te5/Si）nFor [Si（5nm）/Ge2Sb2Te5（5nm）/Si
（5nm）]10。
Remaining is same as Example 1 for preparation method, the difference is that：3. magnetron sputtering prepares [Si to step（5nm）/
Ge2Sb2Te5（5nm）/Si（5nm）]10When multi-layer compound film, the sputtering time of each layer of Si film is 11s, each layer
Ge2Sb2Te5The sputtering time of film is 13s.
（Experimental example）
In order to understand composite phase-change thin-film material of the invention（Si/Ge2Sb2Te5/Si）nPerformance, to each embodiment preparation
Composite phase-change thin-film material is tested.
（1）Composite phase-change thin-film material [Si prepared by embodiment 1（10nm）/Ge2Sb2Te5（10nm）/Si（10nm）]10
Temperature at different 10 DEG C/min of heating rate, 25 DEG C/min, 30 DEG C/min and 40 DEG C/min, sensitivity are tested, is seen
Fig. 2, resistance show that heating rate is faster with temperature curve, and the phase transition temperature of the composite phase-change thin-film material of embodiment 1 is got over
It is high.
Same experiment is also carried out to the composite phase-change thin-film material of embodiment 2 to embodiment 4, likewise, heating speed
Rate is faster, and the phase transition temperature of the composite phase-change thin-film material of each embodiment is higher.
（2）Under conditions of heating rate is 25 DEG C/min, the composite phase-change film material of testing example 1 to embodiment 4
The temperature of material, sensitivity, are shown in Fig. 3, with the Si nano thin-film 2 and Ge in composite phase-change thin-film material2Sb2Te5Film 3
The reduction of thickness, phase transition temperature gradually rise；Illustrate that the phase transition temperature of composite phase-change thin-film material of the invention can be by gradually
Regulation increases, to improve the thermal stability of phase-change material.In addition, the resistance after crystallization also gradually generates variation.
（3）Testing example 1 to embodiment 4 composite phase-change thin-film material activation energy, see Fig. 4,1 material of embodiment
Activation energy is 1.94eV, and the activation energy of 2 material of embodiment is 2.06eV, and the activation energy of 3 material of embodiment is 2.24eV, embodiment
The activation energy of 4 materials is 2.51eV, with the Si nano thin-film 2 and Ge in composite phase-change thin-film material2Sb2Te5The thickness of film 3
The reduction of degree, activation energy become larger；Illustrate the thickness by changing each layer in material, the activation energy of material can be adjusted；And high phase
The corresponding material of temperature has high activation energy.
（4）Testing example 1 to embodiment 4 composite phase-change thin-film material data holding ability, see Fig. 5, embodiment 1
Material under 56 DEG C of environment temperature by data keep 10 years, the material of embodiment 2 will count under 73.3 DEG C of environment temperature
According to being kept for 10 years, the material of embodiment 3 keeps data 10 years under 87.5 DEG C of environment temperature, and the material of embodiment 4 can be
Data are kept for 10 years under 106.8 DEG C of environment temperature.As it can be seen that there are the material with high activation energy high data to keep simultaneously
Power.
（5）Testing example 1 to embodiment 4 composite phase-change thin-film material Raman characteristic.It can be seen that as Si receives
Rice film and Ge2Sb2Te5There is regular change, show the lattice of film in the change of nano film thickness, Raman scattering peak
Vibration mode is gradually by interfacial effect and stress modulation, to change accumulation layer Ge2Sb2Te5Electricity, thermal property.
Claims (1)
1. a kind of composite phase-change thin-film material（Si/Ge2Sb2Te5/Si）nPreparation method, it is characterised in that the compound phase is thinning
Membrane material（Si/Ge2Sb2Te5/Si）nBy 10 groups of Si/Ge2Sb2Te5/ Si laminated film unit composition, each group of laminated film list
Member includes two layers of Si nano thin-film and one layer of Ge2Sb2Te5Nano thin-film, Ge2Sb2Te5The both side surface of film is complete by Si film
Cladding；Two groups of adjacent Si/Ge2Sb2Te5One layer of Si film of/Si laminated film units shared；Form composite phase-change thin-film material
（Si/Ge2Sb2Te5/Si）nSi nano thin-film with a thickness of 5nm, Ge2Sb2Te5Nano thin-film with a thickness of 5nm；Preparation side
Method includes the following steps：
1. it is stand-by to be cleaned drying by the preparation of substrate for substrate；
2. 1. substrate to be sputtered that step is cleaned is placed on base, by Si and Ge by the preparation of magnetron sputtering2Sb2Te5Make
It is separately mounted in magnetron RF sputtering system target for sputtering target material, and the sputtering chamber of magnetron sputtering coating system take out very
Sky uses high-purity argon gas as sputter gas；
3. magnetron sputtering prepares [Si（x）/Ge2Sb2Te5（x）/Si（x）] nMulti-layer compound film, first cleaning Si target and
Ge2Sb2Te5Substrate to be sputtered after cleaning, is rotated to Si target position, Si layers of sputter rate are 0.46nm/ by target material surface
S, sputtering time 11s obtain Si film layer after sputtering；After the completion of the sputtering of Si film layer, Si film layer will have been sputtered
Substrate rotate to Ge2Sb2Te5Target position, Ge2Sb2Te5Layer sputter rate is 0.4nm/s, sputtering time 13s, after sputtering
Obtain Ge2Sb2Te5Film layer；Repeat above-mentioned sputtering Si layers and Ge2Sb2Te5Operation 9 times of layer, then at one layer of most surface
Ge2Sb2Te5One layer of Si film is sputtered on film again to get [Si is arrived（x）/Ge2Sb2Te5（x）/Si（x）] nComposite phase-change film material
Material.
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