CN108818294A - grinding head, grinding system and grinding method - Google Patents
grinding head, grinding system and grinding method Download PDFInfo
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- CN108818294A CN108818294A CN201810670586.0A CN201810670586A CN108818294A CN 108818294 A CN108818294 A CN 108818294A CN 201810670586 A CN201810670586 A CN 201810670586A CN 108818294 A CN108818294 A CN 108818294A
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- grinding
- grinding head
- inner membrance
- charge
- head inner
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 230000006835 compression Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 claims description 5
- 239000000499 gel Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 230000002357 endometrial effect Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000741 silica gel Substances 0.000 description 5
- 229910002027 silica gel Inorganic materials 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Abstract
The present invention provides a kind of grinding head of the too low problem of removal rate of deformed state when can optimize stress so as to improve grinding charge edge film thickness, the method for having the grinding system of the grinding head and being ground using the grinding head.Grinding head includes：Grinding head main body is equipped in the grinding head main body for providing the gas passage of gas pressure, and the gas passage runs through the lower surface of the grinding head main body；And grinding head inner membrance, the material of the grinding head inner membrance includes liquid-state silicon gel, the grinding head inner membrance is fixedly arranged on the lower surface, and port of the gas passage on the lower surface is covered, the grinding head inner membrance pushes down grinding charge for deformation occurs when being passed through gas by the gas passage to be ground.
Description
Technical field
The present invention relates to a kind of for the grinding head of chemical mechanical grinding, the grinding system for having the grinding head, Yi Jili
The method ground with the grinding head.
Background technique
As the method for forming flat surfaces in such as microelectronic substrates such as semiconductor crystal wafer, Field Emission Display, change
Learn mechanical lapping (CMP：Chemical Mechanical Polishing) it is just being used widely in semiconductor industry.
In a cmp process, the grinding charge such as wafer (wafer) is usually adsorbed using grinding head, be moved to
Above grinding pad and it is pressed against grinding pad, rotates grinding head together with grinding charge, meanwhile, lapping liquid is provided to grinding pad
And make its rotation, grinding charge surface is smoothed using the chemical attack of lapping liquid and mechanical force grinding as a result,.
In order to push down grinding charge in grinding, come for example, by using the grinding head inner membrance being located in grinding head to grinding charge
It is pressed.Specifically, when being ground, such as and being inflated to grinding head inner membrance etc. to apply pressure to it
Deformation is brought it about, the grinding head inner membrance after deformation pushes down grinding charge, it is rotated with grinding charge with grinding head,
Thus chemical mechanical grinding is completed.In the past, usually using flexible materials such as solid-state silica gel, rubber as grinding head inner membrance
Material.
Summary of the invention
Problem to be solved by the invention
However, being applied when using the grinding head inner membrance of existing solid-state silica gel material to press grinding charge
Deformation quantity of the grinding head inner membrance close to grinding charge marginal portion after plus-pressure is much smaller compared to middle section, to be difficult to
Grinding charge is pushed down completely and applies enough pressing forces to it.Therefore, so-called " Under " (shifting can occur for grinding charge edge
Except rate is too low) the problem of, i.e.,：Grinding charge edge leads to the film at the deviation of the film thickness at this grinding charge center due to insufficient pressure
It is thick and become too low, so that the film thickness at grinding charge edge be caused to become difficult to control.
The present invention is to complete in view of the above problems, it is intended that providing a kind of deformation shape when can optimize stress
State so as to improve grinding charge edge film thickness Under problem grinding head, have the grinding head grinding system and using should
The method that grinding head is ground.
Technical scheme applied to solve the technical problem
Of the invention in order to solve the problems, such as, grinding head involved in the first aspect of the present invention is characterised by comprising：It grinds
Bistrique main body is equipped in the grinding head main body for providing the gas passage of gas pressure, and the gas passage is ground through described
The lower surface of bistrique main body；And grinding head inner membrance, the material of the grinding head inner membrance include liquid-state silicon gel, the grinding head inner membrance
It is fixedly arranged on the lower surface, and covers port of the gas passage on the lower surface, the grinding head inner membrance is used for
Deformation occurs when being passed through gas by the gas passage to push down grinding charge to be ground.
Grinding system involved in the second aspect of the present invention is characterised by comprising：Such as the first aspect of the present invention institute
The grinding head stated；And the lower section of the grinding head is arranged in grinding pad, the grinding pad, for the grinding to the grinding charge
It is ground in face.
Grinding method involved in the third aspect of the present invention is characterised by comprising：By be adsorbed with grinding charge as
Grinding head described in the first aspect of the present invention is pressed against the step on grinding pad；Be passed through gas by the gas passage so that
Deformation occurs for the grinding head inner membrance thus the step of pushing down the grinding charge；And make the grinding head rotation to described
The step of grinding charge is ground.
Invention effect
Related grinding head, grinding system and grinding method according to the present invention, since the material of grinding head inner membrance includes
Liquid-state silicon gel, therefore, in the gas pressure to grinding head inner membrance application 0.5psi~3psi to push down grinding charge to carry out
When grinding, the abradant surface of grinding charge has at least 90% area to be in contact with the outer surface of grinding head inner membrance, grinding head inner membrance
Deformed state when stress is optimized, and therefore, can improve grinding charge edge film thickness Under problem.
Detailed description of the invention
Fig. 1 is grinding head endometrial morphology when being not applied to pressure for showing grinding head involved in the embodiment of the present invention
Cross-sectional view.
Fig. 2 is to show grinding head endometrial morphology when being pressurized of grinding head involved in the embodiment of the present invention to cut open
View.
Fig. 3 is the top view for showing the structure of grinding head inner membrance shown in Fig. 2.
Fig. 4 is the cross-sectional view for showing grinding head endometrial morphology when being pressurized of grinding head involved in comparative example.
Fig. 5 is for being ground after being ground using the grinding head of the embodiment of the present invention and the grinding head of comparative example
The figure line that the film thickness flatness of object is illustrated.
Specific embodiment
Embodiment
In the following, being illustrated referring to attached drawing to grinding head inner membrance involved in the embodiment of the present invention.
Fig. 1 is the section view for showing grinding head endometrial morphology when being not applied to pressure of grinding head involved in the present embodiment
Figure, Fig. 2 is the cross-sectional view for showing grinding head endometrial morphology when being pressurized of grinding head involved in the present embodiment, Fig. 3
It is the top view for showing the structure of grinding head inner membrance shown in Fig. 2.
As shown in Figure 1, grinding head includes grinding head main body 1, grinding head inner membrance 2 and positioning ring 3.The grinding head be set to
Grinding pad 4 below grinding head, being ground for the abradant surface 5a to grinding charge 5 together, constitutes grinding for the present embodiment
Grinding system.
In grinding head main body 1, equipped with for providing the gas passage 1a of gas pressure.Gas passage 1a, which runs through, to be ground
The lower surface of bistrique main body 1 provides gas pressure to aftermentioned multiple chamber 2a.If gas passage 1a include main channel 1aa and
Heavenly Stems and Earthly Branches channel 1ab.The one end for showing several subchannel 1ab in Fig. 1 is connected to main channel 1aa and is interconnected, the other end passes through
Wear the state of the lower surface of grinding head main body 1, however, it is not limited to this, such as can also make subchannel 1ab be not connected to mutually to
Different gas pressures is provided to each chamber 2a respectively.
On the lower surface of grinding head main body 1, being installed with when being pressurized can the grinding head inner membrance 2 that deformation occurs.
Specifically, the lower surface of grinding head main body 1 is equipped with the annular slot 1b of several concentric spacings setting, grinding head inner membrance 2 has
The raised line 2b, several raised line 2b and several card slot 1b of several concentric spacing settings are corresponded and are arranged in corresponding card slot 1b
It is interior, to realize the structure that grinding head inner membrance 2 is fixedly arranged in grinding head main body 1.In addition, as shown in Figure 1, 2, several subchannels
1ab is arranged through the port of 1 lower surface of grinding head main body and the interval several card slot 1b.
As shown in Fig. 2, when carrying out grinding operation, be pressurized and the grinding head inner membrance 2 and grinding head that deformation occurs
The lower surface of main body 1 surrounds chamber 2a together, so that the grinding charges such as wafer 5 are pressed against on grinding pad 4.As shown in figure 3,
In the top view of grinding head inner membrance 2, each chamber 2a has round or circular ring shape shape, is divided mutually between each chamber by raised line 2b
It opens, each chamber can be inflated respectively and have the pressure similar and different with other chambers.By adjusting being applied to each chamber
The pressure of 2a can improve the heterogencity of the removal rate (removal rate) of CMP processing procedure.For example, by increasing a certain chamber
Pressure, the local grinding rate (polishing rate) of the grinding charges such as the wafer below the chamber can be made to mention
Height, vice versa.
In addition, in the present embodiment, being equipped with the chamber 2a of 3 concentric circles or circular ring shape altogether, but the quantity of chamber is simultaneously
Not limited to this, no matter the quantity of chamber is how many, even if only one chamber, also can be suitably used in grinding head of the invention
Film.
In the periphery of grinding head main body 1, the positioning ring 3 equipped with circular ring shape.Positioning ring 3 surrounds grinding head inner membrance 2.When being ground
When mill object 5 is adsorbed on grinding head, positioning ring 3 keeps grinding charge 5, so that grinding charge 5 is positioned in by positioning
In space defined in 3 grinding head inner membrance 2 of ring.At this point, if the central axis of grinding head is aligned with the center of grinding charge 5,
The edge of grinding charge 5 and positioning ring medial surface 3a, 3b of positioning ring 3 are configured in a manner of equally spaced.When grinding head band
Grinding charge 5 when being rotated to be ground, positioning ring 3 can be when grinding charge 5 deviates the central axis of grinding head pair
Grinding charge 5 is kept, so that grinding charge 5 will not be thrown away from grinding head.However, in normal operating, positioning ring 3 can be with
It is not in contact with grinding charge 5.
The form of the material to grinding head inner membrance 2 and grinding head inner membrance 2 when being pressurized is illustrated below.
The grinding head inner membrance 2 of the present embodiment is made of liquid-state silicon gel, and Shore A hardness is Shore 20HA, and compression is permanent
It is deformed into 0.15%, linear shrinkage 2.0%.To grinding head inner membrance apply pressure by make in a manner of it deformation to push down by
Abrasive material is come when being ground, usual pressure applied is 0.5psi~3psi.In the present embodiment, to grinding head inner membrance 2
The pressure for applying 2.5psi, at this point, since grinding head inner membrance 2 uses hardness lower (for the liquid-state silicon gel of 20HA) in the present embodiment
Material constitute, therefore, 2 stress of grinding head inner membrance and complete enough deformation, thus the outer surface of grinding head inner membrance 2 completely with ground
The abradant surface of mill object 5 is in contact.The marginal portion of grinding charge 5 can be made to obtain enough pressure to complete chemical machinery as a result,
Grinding, the film thickness at the grinding charge edge after grinding and the film thickness at grinding charge center are consistent, the removal rate of CMP processing procedure
Heterogencity is improved, thus the problem of overcoming grinding charge edge film thickness Under.
In addition, since grinding head inner membrance 2 uses compression set range smaller (for the liquid of 0.15 %) in the present embodiment
State silica gel material is constituted, and therefore, the rebound degree of grinding head inner membrance 2 is higher, can be preferably extensive from Fig. 3 state when being stopped pressure
Fig. 1 state is arrived, again so as to increase service life.
In addition, since grinding head inner membrance 2 uses the liquid-state silicon glue material of linear shrinkage higher (for 0.2% in the present embodiment)
Texture at, it is therefore, larger to the technique adjustable extent of 2 pressure applied of grinding head inner membrance, can preferably grinding to grinding charge 5
Mill amount is controlled.
Further, since liquid-state silicon gel has good absorption with flexible material (such as rubber) relative to other
Property, therefore, during picking up grinding charge 5 to be placed in grinding pad 4, steadily grinding charge 5 can be adsorbed,
Grinding charge 5 is pressed against grinding pad 4 can increase between grinding charge 5 and grinding head inner membrance 2 during being ground
Frictional force is to more stably drive grinding charge 5 to rotate together with grinding head.
Further, since liquid-state silicon gel hardly reacts with any substance in addition to highly basic, hydrofluoric acid, therefore, utilizing
Lapping liquid come when grinding to grinding charge 5, grinding head inner membrance 2 is not easy to react with the chemical component in lapping liquid,
With good chemical stability.
Further, since liquid-state silicon gel also has good thermal stability and higher mechanical strength, therefore, to being ground
When object is ground, because of the abrasive grain and quilt between grinding charge and grinding pad, between positioning ring and grinding pad and in lapping liquid
Friction between abrasive material and grinding pad and the heat generated are not easy to impact grinding head inner membrance 2, also, in grinding head
Film 2 is less likely to occur to rupture.
In the present embodiment, as shown in Fig. 2, showing the quilt when stress and deformation pushes down grinding charge 5 of grinding head inner membrance 2
The example that the opposing face 5b of the abradant surface 5a of abrasive material 5 is in contact with the outer surface of grinding head inner membrance 2 completely, but the present invention is not
It is confined to this.As long as the opposing face 5b of the abradant surface 5a of grinding charge 5 has at least 90% area and the appearance of grinding head inner membrance 2
Face is in contact, it will be able to the problem of improving 5 edge film thickness Under of grinding charge.For example, in grinding head inner membrance 2 by 0.5psi
In the case where the pressure of~3psi, the opposing face 5b of the abradant surface 5a of grinding charge 5 has at least 90%, is preferably at least 95%
Area is in contact with the outer surface of grinding head inner membrance 2.
It with hardness is 20HA, compression set 0.15%, linear shrinkage 2.0% in addition, in the present embodiment
Liquid-state silicon gel be illustrated as the material of grinding head inner membrance 2, but the present invention is not limited thereto.For example, it is also possible to
The hardness of grinding head inner membrance is set as 17.6HA~22.4HA, permanent deformation is compressed it and is set as 0.139%~0.161%, it will
Its linear shrinkage is set as 1.85%~2.15%.It is made in grinding head when using any material in above parameter range
When film, the problem of grinding charge edge film thickness Under can be improved.
In the following, the method ground to all grinding charges of the grinding head using the present embodiment is illustrated.Firstly, grinding
Vacuum is generated inside bistrique to adsorb to grinding charge 5.Then, the grinding head for being adsorbed with grinding charge 5 is pressed against and is ground
Pad 4 is ground, and closes vacuum, to become state shown in Fig. 1.At this point, grinding charge 5 is kept by positioning ring 3, in grinding charge
Minim gap may be present between the opposing face 5b of 5 abradant surface 5a and the outer surface of grinding head inner membrance 2, in addition, grinding charge 5
It can slightly offset with grinding head inner membrance 2.Then, gas is applied to each chamber 2a of grinding head inner membrance 2 by gas passage 1a
Pressure, making grinding head inner membrance 2, deformation occurs so that grinding charge 5 is pushed down, so that the opposing face 5b of the abradant surface 5a of grinding charge 5
There is at least 90% area to be in contact with the outer surface of grinding head inner membrance 2.Finally, respectively rotate grinding head and grinding pad 4, from
And the abradant surface 5a of grinding charge 5 is ground.Wherein, 0.5psi is being applied to grinding head inner membrance 2 by gas passage 1a
In the case where the pressure of~3psi, the opposing face 5b of the preferably abradant surface 5a of grinding charge 5 has at least 95% area and grinds
The outer surface of bistrique inner membrance is in contact.
Using above-mentioned grinding method, it can be achieved that each technical effect present invention as described above.
Comparative example
In the following, being illustrated referring to attached drawing to grinding head inner membrance involved in comparative example of the invention.
Fig. 4 is the cross-sectional view for showing grinding head endometrial morphology when being pressurized of grinding head involved in comparative example.
The difference of comparative example and embodiment is, grinding head inner membrance 2 ' use the higher solid-state silica gel material of hardness (such as hardness for
45~52HA, compression set are 5%~10%, linear shrinkage is 1%~2%).
As shown in figure 4, bringing it about deformation applying pressure to grinding head inner membrance 2 ' by gas passage 1a to push down
Grinding charge 5 come when being ground, the edge of grinding head inner membrance 2 ' because deformation is insufficient can not be with the abradant surface of grinding charge 5
The opposing face 5b of 5a is in contact, and therefore, even if the pressure for being applied to grinding head inner membrance 2 ' reaches upper limit 3psi, can not also press completely
The firmly edge of grinding charge 5, so that the edge of grinding charge 5 is unable to complete CMP grinding, it is possible to film thickness can occur
The problem of Under.
In order to be compared to embodiment with comparative example, the grinding head of grinding head and comparative example using embodiment is carried out
The film thickness flatness of grinding charge after grinding is determined, as a result as shown in Figure 5.The horizontal axis of Fig. 5 indicates that wafer etc. is ground
Grind the radius (unit of object：Millimeter), the longitudinal axis indicates to complete the film thickness (unit of grinding：Micron).As shown in figure 5, using comparative example
Solid-state silica gel grinding head inner membrance grinding head complete grinding after film thickness in the crystal round fringes (radius in figure in box
143mm~147mm) at increased dramatically.In contrast, grinding using the grinding head inner membrance of the liquid-state silicon gel of the embodiment of the present invention
Film thickness of the bistrique after completing grinding is consistent at crystal round fringes with crystal circle center substantially.It follows that using the present invention
The grinding head of the liquid-state silicon gel of embodiment can make the film thickness at crystal round fringes become more smooth, to overcome edge film thickness
The problem of Under.
The embodiment of the present invention is illustrated above.It will be understood that all aspects of this embodiment disclosed are only
Citing indicates, is not restrictive.The scope of the present invention indicates by claims, and not by above-described embodiment come table
Show, the scope of the present invention further includes all amendments in the meaning and range being equal with claims, variations and combinations.
Industrial practicability
Deformed state when due to grinding head inner membrance stress according to the present invention is optimized, and grinding charge side can be improved
Therefore velum thickness Under problem is applicable to for example single grinding head rotary type system, more grinding head rotary type CMP systems, more
The production of grinding head used in all CMP process such as abrasive disk CMP system, rail mounted CMP system and linear CMP apparatus,
Manufacture and utilization.
Label declaration
1 grinding head main body
1a gas passage
The main channel 1aa
The subchannel 1ab
1b card slot
2,2 ' grinding head inner membrance
2a chamber
2b raised line
3 positioning rings
3a, 3b positioning ring medial surface
4 grinding pads
5 grinding charges (wafer)
5a abradant surface
5b opposing face.
Claims (11)
1. a kind of grinding head, which is characterized in that including：
Grinding head main body is equipped with for providing the gas passage of gas pressure in the grinding head main body, and the gas passage runs through
The lower surface of the grinding head main body；And
The material of grinding head inner membrance, the grinding head inner membrance includes liquid-state silicon gel, and the grinding head inner membrance is fixedly arranged on the lower surface,
And port of the gas passage on the lower surface is covered,
The grinding head inner membrance be used for when being passed through gas by the gas passage deformation occurs to push down grinding charge come
It is ground.
2. grinding head as described in claim 1, which is characterized in that
The hardness of the grinding head inner membrance is 17.6HA~22.4HA.
3. grinding head as described in claim 1, which is characterized in that
The compression set of the grinding head inner membrance is 0.139%~0.161%.
4. grinding head as described in claim 1, which is characterized in that
The linear shrinkage of the grinding head inner membrance is 1.85%~2.15%.
5. grinding head as described in claim 1, which is characterized in that
The lower surface is equipped with the annular slot of several concentric spacings setting,
The grinding head inner membrance has the raised line of several concentric spacings setting,
Several raised lines and several card slots are corresponded and are arranged in the card slot to realize the grinding head inner membrance
It is fixedly arranged in the grinding head main body.
6. grinding head as described in claim 1, which is characterized in that
The gas passage includes main channel and several subchannels, and one end of several subchannels is connected to main channel, another
The lower surface is run through at end, and several subchannels are arranged through the port of the lower surface and several card slot intervals.
7. grinding head as claimed in claim 6, which is characterized in that
The grinding head inner membrance is configured to：It is described when the gas pressure applied to the grinding head inner membrance is 0.5psi~3psi
The opposing face of the abradant surface of grinding charge has at least 90% area to be in contact with the outer surface of the grinding head inner membrance.
8. such as described in any item grinding heads of claim 1 to 7, which is characterized in that
It further include positioning ring, which is looped around the periphery of the grinding head main body, surrounds the grinding head inner membrance and to institute
Grinding charge is stated to be kept.
9. a kind of grinding system, which is characterized in that including：
Such as described in any item grinding heads of claim 1 to 8；And
The lower section of the grinding head is arranged in grinding pad, the grinding pad, grinds for the abradant surface to the grinding charge.
10. a kind of grinding method, which is characterized in that including：
The step of grinding charge being pressed against on grinding pad such as described in any item grinding heads of claim 1 to 5 will be adsorbed with；
Be passed through gas by the gas passage so that the grinding head inner membrance deformation occurs to pushing down the grinding charge
Step；And
Make the step of grinding head rotation is to grind the grinding charge.
11. grinding method as claimed in claim 10, which is characterized in that
The gas passage includes main channel and several subchannels, and one end of several subchannels is connected to main channel, is another
The lower surface is run through at end, and several subchannels are arranged through the port of the lower surface and several card slot intervals,
The pressure of the gas is 0.5psi~3psi when being ground, so that the opposing face of the abradant surface of the grinding charge has
At least 90% area is in contact with the outer surface of the grinding head inner membrance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810670586.0A CN108818294A (en) | 2018-06-26 | 2018-06-26 | grinding head, grinding system and grinding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810670586.0A CN108818294A (en) | 2018-06-26 | 2018-06-26 | grinding head, grinding system and grinding method |
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| CN108818294A true CN108818294A (en) | 2018-11-16 |
Family
ID=64138803
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810670586.0A Pending CN108818294A (en) | 2018-06-26 | 2018-06-26 | grinding head, grinding system and grinding method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109605210A (en) * | 2019-01-23 | 2019-04-12 | 长江存储科技有限责任公司 | A kind of grinding head and chemical-mechanical grinding device |
| CN114427941A (en) * | 2020-10-29 | 2022-05-03 | 长鑫存储技术有限公司 | Leak detection device |
| CN114473842A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Grinding disc, chemical mechanical polishing device, system and method |
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| CN109605210A (en) * | 2019-01-23 | 2019-04-12 | 长江存储科技有限责任公司 | A kind of grinding head and chemical-mechanical grinding device |
| CN114427941A (en) * | 2020-10-29 | 2022-05-03 | 长鑫存储技术有限公司 | Leak detection device |
| CN114427941B (en) * | 2020-10-29 | 2023-10-24 | 长鑫存储技术有限公司 | Leak detection device |
| CN114473842A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Grinding disc, chemical mechanical polishing device, system and method |
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