CN108811307A - A kind of three-dimensional ceramic circuit board and preparation method thereof - Google Patents

A kind of three-dimensional ceramic circuit board and preparation method thereof Download PDF

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Publication number
CN108811307A
CN108811307A CN201810712648.XA CN201810712648A CN108811307A CN 108811307 A CN108811307 A CN 108811307A CN 201810712648 A CN201810712648 A CN 201810712648A CN 108811307 A CN108811307 A CN 108811307A
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ceramic
dimensional
circuit board
preparation
substrate
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CN108811307B (en
Inventor
陈明祥
杨子洲
程浩
彭洋
孙庆磊
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0284Details of three-dimensional rigid printed circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/119Details of rigid insulating substrates therefor, e.g. three-dimensional details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0014Shaping of the substrate, e.g. by moulding
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

The invention belongs to ceramic circuit board preparation fields, and disclose a kind of three-dimensional ceramic circuit board and preparation method thereof.The plane ceramic substrate and the three-dimensional ceramic structure on plane ceramic substrate that three-dimensional ceramic circuit board includes surface layer containing metallic circuit.The present invention also provides the preparation method of the three-dimensional ceramic circuit board, including prepared by three-dimensional structure modeling, ceramic slurry, direct write shaped three dimensional structure and to three-dimensional structure be heat-treated.The present invention has many advantages, such as that simple for process, the cost of material is low, production efficiency is high, can prepare the three-dimensional ceramic circuit board containing cavity body structure, prepared three-dimensional ceramic circuit board intensity is high, it is heat-resist, corrosion-resistant, electronic device level Hermetic Package can be met require.

Description

A kind of three-dimensional ceramic circuit board and preparation method thereof
Technical field
The invention belongs to ceramic circuit board preparation fields, more particularly, to a kind of three-dimensional ceramic circuit board and its preparation Method.
Background technology
Ceramic substrate is because it is high with thermal conductivity, thermal stability is good, coefficient of thermal expansion and chip match, high frequency performance is prominent The advantages that going out, is corrosion-resistant (acidproof, alkaline-resisting, water-fast) and the package substrate for being widely used as power device;With hyundai electronics system The high speed development for making technology also proposed new requirement to the encapsulation of electronic device, and for electronic device, hermetic seal is equipped with Conducive to protection electronic device, its service life is improved.However, plane ceramic substrate is difficult to realize level Hermetic Package, industry carries thus A kind of three-dimensional substrate containing cavity body structure is gone out.
In the prior art, the cavity body structure of ceramic substrate can be made of metal material, high molecular material or ceramic material, such as Metal cavity and DPC ceramic substrates are welded at high temperature using brazing metal in patent CN105826458A, contained The three-dimensional DPC ceramic substrates of metal cavity.The drawback of this method maximum is the coefficient of thermal expansion of metal material and ceramic material It is inconsistent, operation at high temperature is needed, energy consumption is big and is easy to damage electronic product, and cavity is prepared using high molecular material, Although manufacture craft is simple, since high molecular material is not gastight material, level Hermetic Package, and high molecular material cannot achieve It is difficult to be resistant to high temperature, is easy to fail under die bond or applied at elevated temperature.
Ceramic cavity compared to metal cavity, macromolecule cavity have many advantages, such as with the thermal expansion system of ceramic substrate Number matches, is corrosion-resistant, air-tightness is good, can be with currently, LTCC/HTCC ceramic substrates are because it uses Multi-stacking compaction cofiring technology Ceramic cavity is prepared, but dimensional accuracy is not high, and circuit is made using thick film print technology, the more coarse Ra of circuit surface is about It it is 1~3 μm, these factors lead to ltcc substrate (low-temperature co-fired ceramic substrate)/HTCC substrates (high-temperature co-fired ceramics substrate) Using being restricted, in addition, this technique is difficult to prepare cavity body structure on the plane ceramic substrate of elevated track precision, such as DPC substrates (electro-plated pottery substrate), DBC substrates (high temperature bonding ceramic substrate), for this purpose, people urgently seek a kind of technique letter The ceramic cavity preparation method of single, compatible various ceramic substrate preparation processes.
Invention content
For the disadvantages described above or Improvement requirement of the prior art, the present invention provides a kind of three-dimensional ceramic circuit board and its systems Preparation Method, the present invention shape closed hoop ceramics three on the ceramic substrate by selecting plane ceramic substrate at direct write Structure is tieed up, full-inorganic three-dimensional ceramic circuit board is formed with this, and two sections of material ingredient is similar on ceramic circuit board, thermally expands system Number is close, and preparation process is simple.
To achieve the above object, according to one aspect of the present invention, a kind of three-dimensional ceramic circuit board is provided, feature exists In,
The ceramic circuit board includes the three-dimensional ceramic structure of plane ceramic substrate and setting on the substrate, the plane Metallic circuit layer is provided on ceramic substrate, for realizing the electrical connection of electronic device, the three-dimensional ceramic structure is using ceramics Slurry direct write on the plane ceramic substrate is molded, and open cavity body structure is surrounded with the ceramic substrate, in the cavity Place electronic device.
It is further preferred that thick film ceramic substrate (TFC), high temperature bonding ceramic substrate (DBC), electro-plated pottery base can be used Plate (DPC).
It is further preferred that the three-dimensional ceramic structural thickness is 0.1mm~10.0mm.
Other side according to the invention additionally provides a kind of preparation method of ceramic circuit board as described above, It is characterized in that, this method includes the following steps:
(a) the plane ceramic substrate of preparation layer containing metallic circuit, the threedimensional model of the three-dimensional ceramic structure of design, and Corresponding machining path is produced according to the threedimensional model;
(b) ceramic slurry for being molded the three-dimensional ceramic structure is prepared;
(c) on the plane ceramic substrate, using the ceramic slurry according to described in machining path direct write molding Three-dimensional ceramic structure, is heating and curing, and required ceramic circuit board is obtained with this.
It is further preferred that in step (b), the preparation of the ceramic slurry is by by alkali silicate, oxidation Aluminium, additive and deionized water mix in proportion, and are obtained after ball milling, wherein the alkali metal silicate salt content is 30.0 ~50.0wt%, the alumina content are 40.0~60.0wt%, and the additional agent content is 1.0~5.0wt%, and surplus is The deionized water.
It is further preferred that in step (b), the particle size range of alkali silicate or aluminium oxide in the ceramic slurry It is preferred that using 0.1 μm~50 μm.
It is further preferred that in step (b), the additive preferably uses citrate, six inclined sulfate, polypropylene One or more of hydrochlorate, pyrophosphate, quaternary amine, humate, lignosulfonates.
It is further preferred that in step (c), the nozzle diameter that is used in the direct write molding preferably use 0.1mm~ 5.0mm, nozzle movement speed are 1mm/s~1000mm/s.
It is further preferred that in step (c), the temperature being heating and curing preferably uses 100 DEG C~150 DEG C, heat preservation 1h~2h.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show Beneficial effect:
1, the present invention uses direct write moulding process shaped three dimensional ceramic structure on plane ceramic substrate, is allowed to make pottery with plane Porcelain substrate is well combined, in the prior art by the way that ceramic substrate to be sintered for (700 DEG C or more) with ceramic three-dimensional structure together high temperature Formed, sintering process can cause to shrink, and precision is not high to preparing, the direct write moulding process in the present invention without high temperature sintering, Unobvious are shunk, therefore can be in the preparation requirement for meeting the ceramic substrate of elevated track precision;
2, the method for the present invention uses three-dimensional ceramic structure and the plane ceramic substrate of direct-write process preparation for full-inorganic three-dimensional Ceramic circuit board, bond strength is high at high temperature with plane ceramic substrate for three-dimensional ceramic structure, and coefficient of thermal expansion matches, effectively It solves the problems, such as that three-dimensional metal structure and coefficient of thermal expansion existing for ceramic substrate are unmatched and bond strength is not high to ask Topic;
3, the present invention forms cavity, when finally by electron device package in cavity, gas by using three-dimensional ceramic structure Close property is good, can meet the requirement of electronic device level Hermetic Package, solves the problems, such as three-dimensional macromolecular structure poor air-tightness;
4, the ceramic substrate used in the present invention has thermal conductivity height, and is widely used as high-power electronic device encapsulation base Plate, the cavity that ceramic three-dimensional structure is formed makes being environmentally isolated out for electronic device and surrounding, during preventing circuit board working life The intrusion for encapsulating ambient moisture, good long-term reliability is obtained with this;
5, the present invention, can be with various plane ceramic substrates such as by using direct write moulding process shaped three dimensional ceramic structure The preparation processes such as DBC, DPC, TFC are compatible with, applied widely.
Description of the drawings
Fig. 1 is the cross section structure schematic diagram of the three-dimensional ceramic circuit board constructed by embodiment 1 according to the invention;
Fig. 2 is the three-dimensional ceramic board structure of circuit schematic diagrames that embodiment 1 according to the invention provides;
Fig. 3 is the three-dimensional ceramic circuit board preparation technology flow chart of embodiment 1 according to the invention;
Fig. 4 is the three-dimensional ceramic board structure of circuit schematic diagrames provided according to the embodiment of the present invention 2;
Fig. 5 is the three-dimensional ceramic board structure of circuit schematic diagrames provided according to the embodiment of the present invention 3.
In all the appended drawings, identical reference numeral is used for indicating identical element or structure, wherein:
The surfaces 10- ceramic substrate 11- cavity 12- surface metal line layer 13- metal throuth hole 20-DPC ceramic substrate 21- gold Belong to line layer 22- circular ring shape three-dimensional ceramic structure 40-DBC ceramic substrate 41- surface metal line layer 42- pros annular three-dimensional pottery Porcelain structure 50- thick film ceramic substrate 51- surface metal line layer 52- rectangular ring three-dimensional ceramic structures
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below It does not constitute a conflict with each other and can be combined with each other.
Fig. 1 is the cross section structure schematic diagram of the three-dimensional ceramic circuit board constructed by preferred embodiment according to the invention, such as Shown in Fig. 1, a kind of three-dimensional ceramic circuit board, the three-dimensional ceramic circuit board include plane ceramic substrate and be set to the plane ceramic Three-dimensional structure on substrate.
Preferably, the plane ceramic substrate be thick film firing ceramic substrate (TFC), high temperature bonding ceramic substrate (DBC), Electro-plated pottery substrate (DPC).
Preferably, thick according to three-dimensional ceramic structure described in the precision of the size of electronic device and direct write moulding process itself Degree, i.e. height are 0.1~10.0mm,.
The preparation method of three-dimensional ceramic circuit board described above, Fig. 3 are the three-dimensional ceramics of embodiment 1 according to the invention Circuit board preparation technology flow chart, as shown in figure 3, this approach includes the following steps:
1) the plane ceramic substrate of the layer containing metallic circuit is prepared;
2) three-dimensional structure modeling:The three-dimensional structure of design generates path by slice;
3) ceramic slurry is prepared:Alkali silicate, aluminium oxide, additive and water are mixed in proportion, after ball milling Prepare ceramic slurry;
4) direct write is molded:Above-mentioned plane ceramic substrate is placed in the three-dimensional movement platform of direct write former, ceramic slurry Material is squeezed out from nozzle under the control of the computer, and multiple-layer stacked forms designed three-dimensional structure on plane ceramic substrate;
5) curing process:The above-mentioned ceramic circuit board containing three-dimensional structure is heating and curing, three-dimensional ceramic circuit is obtained Plate.
Preferably, the three-dimensional ceramic structure is circular ring shape, square annular, rectangular annular or other closed annulars.
Preferably, in the ceramic slurry, alkali metal silicate salt content is 30.0~50.0wt%, and alumina content is 40.0~60.0wt%, additional agent content are 1.0~5.0wt%, and surplus is deionized water.
Preferably, the ceramic slurry solid particle includes the solid particle of alkali silicate and aluminium oxide, the two grain For diameter range at 0.1 μm~50 μm, particle size range influences the speed squeezed out from nozzle in direct write moulding process.
Preferably, the alkali silicate is or mixtures thereof one kind in sodium metasilicate, potassium silicate, lithium metasilicate.
Preferably, the additive is citrate, six inclined sulfate, polyacrylate, pyrophosphate, quaternary amine, humic One or several kinds in hydrochlorate, lignosulfonates.
Preferably, the nozzle diameter is 0.1~5.0mm, and nozzle movement speed is 1~1000mm/s.
Preferably, the temperature that is heating and curing is 100-150 DEG C, keeps the temperature 1-2h.
It further illustrates the present invention below in conjunction with specific embodiments.
Embodiment 1
The embodiment of the present invention 1 provides a kind of three-dimensional DPC ceramic circuit board preparation methods, includes the following steps:
S01. plane DPC substrates are prepared:Using techniques such as laser boring, exposure imaging, plating, etchings, table is prepared The DPC substrates of face layer containing metallic circuit;
S02. circular ring shape three-dimensional structure is drawn out, internal diameter 5mm, outer diameter 6mm are highly 0.9mm.By circular ring shape three-dimensional Structure is cut into three pieces and generates path, and imported into slurry direct write former;
S03. select aluminium oxide, sodium metasilicate, potassium silicate, two citric acid monohydrate acid trisodiums and water and by 45wt%, 20wt%, 20wt%, 4%, 11wt% ratio mixing and ball millings 8h prepare ceramic slurry, and the grain size of aluminium oxide, sodium metasilicate and potassium silicate is 0.1 μm~50 μm, bubble in slurry is eliminated in vibration, is then placed in slurry in the material-holding chamber of direct write former;
S04. DPC ceramic substrates are cleaned into 5min respectively with alcohol and deionized water, then uses air blow drying, and by DPC Substrate is placed in the three-dimensional movement platform of direct write former;
S05. direct write molding in, select internal diameter be 0.51mm nozzle, nozzle movement speed be 30mm/s, starting device, The successively three-dimensional structure designed by extrusion molding obtains the DPC ceramic circuit boards containing three-dimensional structure;
S06. three-dimensional DPC ceramic circuit boards are kept the temperature into 1h dry solidifications at 150 DEG C, thus to obtain three-dimensional ceramic circuit Plate, as shown in Fig. 2, including DPC ceramic substrates 20, the surface metal line layer 21 and circular ring shape being disposed on the substrate are three-dimensional Ceramic structure, schematic cross-section is as shown in Figure 1, include ceramic substrate 10, the chamber that ceramic three-dimensional structure is formed on the circuit board Body 11, and the surface metal line layer 12 and metal throuth hole 13 that are disposed on the substrate.
Its process flow chart is as shown in Figure 3
Embodiment 2
The present embodiment provides a kind of three-dimensional DBC ceramic circuit board preparation methods, include the following steps:
S01. the plane DBC substrates of the line layer containing surface metal are prepared;
S02. square annular three-dimensional structure is drawn out, internal diameter is 5mm, and outer diameter is 6mm, thickness 1.5mm.By square annular Three-dimensional structure is cut into four and generates path, and imported into slurry direct write former;
S03. select aluminium oxide, sodium metasilicate, six inclined sulfate and water and by 40wt%, 40wt%, 2%, surplus be water Ratio mixing and ball milling 8h prepares ceramic slurry, sodium metasilicate, aluminium oxide grain size be range at 0.1 μm -50 μm, slurry is eliminated in vibration Slurry, is then placed in the material-holding chamber of direct write former by bubble in material;
S04. DBC ceramic substrates are cleaned into 5min respectively with alcohol and deionized water, then uses air blow drying, and by DBC Substrate is placed in the three-dimensional movement platform of direct write former;
S05. direct write molding in, select internal diameter be 0.84mm nozzle, nozzle movement speed be 20mm/s, starting device, The successively three-dimensional structure designed by extrusion molding obtains the DBC ceramic circuit boards containing three-dimensional structure;
S06. three-dimensional DBC ceramic circuit boards are kept the temperature into 2h dry solidifications at 100 DEG C, thus to obtain three-dimensional ceramic circuit Plate, as shown in figure 4, including DBC ceramic substrates 40, the surface metal line layer 41 and square ring that are arranged on ceramic substrate Shape three-dimensional ceramic structure 42.
Embodiment 3
The present embodiment provides a kind of three-dimensional thick film ceramic circuit board preparation methods, include the following steps:
S01. the plane thick film ceramic substrate of the line layer containing surface metal is prepared;
S02. rectangular, three-dimensional structure is drawn out, length, width and height are respectively 10mm, 6mm and 10mm.Rectangular, three-dimensional structure is cut into Ten and path is generated, and imported into slurry direct write former;
S03. select aluminium oxide, sodium metasilicate, potassium silicate, six inclined sodium sulphate and water and by 60wt%, 20wt%, 10wt%, 5%, surplus is that the ratio mixing and ball milling 8h of water prepares ceramic slurry, and the grain size of potassium silicate, sodium metasilicate grain size and aluminium oxide is 0.1 μm~50 μm, bubble in slurry is eliminated in vibration, is then placed in slurry in the material-holding chamber of direct write former;
S04. it uses alcohol and deionized water respectively by thick film ceramic base-plate cleaning 5min, then uses air blow drying, and will be thick Film ceramic substrate is placed in the three-dimensional movement platform of direct write former;
S05. in direct write molding, it is the nozzle of 1.1mm to select internal diameter, and the movement velocity of nozzle is 70mm/s, starting device, The successively three-dimensional structure designed by extrusion molding obtains the DBC ceramic circuit boards containing three-dimensional structure;
S06., thick film ceramic circuit board is kept the temperature to 1.5h dry solidifications at 120 DEG C, thus to obtain three-dimensional ceramic circuit board. As shown in figure 5, including thick film ceramic substrate 50, the surface metal line layer 51 and rectangular ring that are arranged on ceramic substrate Three-dimensional ceramic structure 52.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to The limitation present invention, all within the spirits and principles of the present invention made by all any modification, equivalent and improvement etc., should all include Within protection scope of the present invention.

Claims (9)

1. a kind of three-dimensional ceramic circuit board, which is characterized in that
The ceramic circuit board includes the three-dimensional ceramic structure of plane ceramic substrate and setting on the substrate, the plane ceramic Metallic circuit layer is provided on substrate, for realizing the electrical connection of electronic device, the three-dimensional ceramic structure uses ceramic slurry Direct write is molded on the plane ceramic substrate, and open cavity body structure is surrounded with the ceramic substrate, is placed in the cavity Electronic device.
2. ceramic circuit board as described in claim 1, which is characterized in that thick film ceramic base can be used in the plane ceramic substrate Plate, high temperature bonding ceramic substrate, electro-plated pottery substrate.
3. ceramic circuit board as described in claim 1, which is characterized in that the three-dimensional ceramic structural thickness be 0.1mm~ 10.0mm。
4. a kind of preparation method of ceramic circuit board as described in any one of claims 1-3, which is characterized in that this method includes The following steps:
(a) the plane ceramic substrate of preparation layer containing metallic circuit, the threedimensional model of the three-dimensional ceramic structure of design, and according to The threedimensional model produces corresponding machining path;
(b) ceramic slurry for being molded the three-dimensional ceramic structure is prepared;
(c) on the plane ceramic substrate, the three-dimensional is molded according to the machining path direct write using the ceramic slurry Ceramic structure is heating and curing, and required ceramic circuit board is obtained with this.
5. the preparation method as described in right 4, which is characterized in that in step (b), the preparation of the ceramic slurry be pass through by Alkali silicate, aluminium oxide, additive and deionized water mix in proportion, and are obtained after ball milling, wherein the alkali metal Silicate content is 30.0~50.0wt%, and the alumina content is 40.0~60.0wt%, and the additional agent content is 1.0 ~5.0wt%, surplus are the deionized water.
6. the preparation method as described in right 5, which is characterized in that in step (b), alkali silicate in the ceramic slurry Or the particle size range of aluminium oxide preferably uses 0.1 μm~50 μm.
7. the preparation method as described in right 4 or 5, which is characterized in that in step (b), the additive preferably uses lemon One or more of hydrochlorate, six inclined sulfate, polyacrylate, pyrophosphate, quaternary amine, humate, lignosulfonates.
8. such as right 4-7 any one of them preparation methods, which is characterized in that in step (c), used in the direct write molding Nozzle diameter preferably use 0.1mm~5.0mm, nozzle movement speed be 1mm/s~1000mm/s.
9. such as right 4-8 any one of them preparation methods, which is characterized in that in step (c), the temperature being heating and curing It is preferred that using 100 DEG C~150 DEG C, 1h~2h is kept the temperature.
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CN109904138A (en) * 2019-03-04 2019-06-18 武汉利之达科技股份有限公司 A kind of three-dimensional ceramic substrate and preparation method thereof
CN111212517A (en) * 2020-01-07 2020-05-29 深圳市江霖电子科技有限公司 Three-dimensional ceramic-based circuit board

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904138A (en) * 2019-03-04 2019-06-18 武汉利之达科技股份有限公司 A kind of three-dimensional ceramic substrate and preparation method thereof
CN111212517A (en) * 2020-01-07 2020-05-29 深圳市江霖电子科技有限公司 Three-dimensional ceramic-based circuit board
CN111212517B (en) * 2020-01-07 2021-05-18 深圳市江霖电子科技有限公司 Three-dimensional ceramic-based circuit board

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