CN108809291A - Level shifting circuit and electronic equipment - Google Patents

Level shifting circuit and electronic equipment Download PDF

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Publication number
CN108809291A
CN108809291A CN201810837133.2A CN201810837133A CN108809291A CN 108809291 A CN108809291 A CN 108809291A CN 201810837133 A CN201810837133 A CN 201810837133A CN 108809291 A CN108809291 A CN 108809291A
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unit
level
charge
voltage
switch unit
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CN108809291B (en
Inventor
董凌
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XFusion Digital Technologies Co Ltd
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Huawei Technologies Co Ltd
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Priority to CN201810837133.2A priority patent/CN108809291B/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00315Modifications for increasing the reliability for protection in field-effect transistor circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

The embodiment of the present application discloses a kind of level shifting circuit and electronic equipment, for solving the problems, such as since to cause level shifting circuit to be hung dead for defective device.The level shifting circuit of the embodiment of the present application includes:Level input unit, charge/discharge unit, switch unit and level output unit;The first end of the switch unit is connect with the level input unit, the second end of the switch unit is connect with the first end of the charge/discharge unit, the third end of the switch unit is connect with the second end of the charge/discharge unit, and it is connect with the level output unit, the third end ground connection of the charge/discharge unit;When the level input unit input high level, and the load being connect with the third end of the switch unit by the voltage at the third end of the switch unit draw be low level when, before switch unit cut-off, the charge/discharge unit electric discharge, when the voltage of the charge/discharge unit is less than predeterminated voltage, the switch unit cut-off.

Description

Level shifting circuit and electronic equipment
Technical field
This application involves electronic technology more particularly to a kind of level shifting circuits and electronic equipment.
Background technology
In flow-line modulus converter, it is commonly applied to level shifting circuit, is turned for realizing low and high level signal It changes.Wherein, level shifting circuit includes IC bus (Inter-Intergrated Circuit, IIC) level conversion electricity Road.
Currently, IIC level shifting circuits by discrete devices erect come, external equipment is by its data line and clock Line is coupled with the clock line of the data line and iic bus of the iic bus in the IIC level shifting circuits, by IIC electricity Level input in flat conversion circuit inputs low and high level, to realize the conversion of level.
But since external equipment is that its data line and clock line are coupled in the IIC level shifting circuits The data line of iic bus and the clock line of iic bus therefore, at this time can will be whole when one of external equipment occurs abnormal The level of a iic bus drags down.So when level input input high level, level output end is due to the external equipment at this time Exception be constantly in low level, cause the switching tube in level shifting circuit to be constantly in conducting state, entire level conversion The level of the entire iic bus of circuit is constantly in low level state, so level shifting circuit, which is in, hangs death situation state, Wu Fajin Row normal work.
Invention content
The embodiment of the present application provides a kind of level shifting circuit and electronic equipment, for being inputted when level input unit When high level, and occur external loading extremely so that the voltage at third end of switch unit is in low level when, charge/discharge unit Electric discharge, when the voltage of charge/discharge unit is less than predeterminated voltage, switch unit cut-off is realized the isolation to load fault, is solved Since level shifting circuit caused by load fault hangs dead problem.
The embodiment of the present application first aspect provides a kind of level shifting circuit, which may include:Level Input unit, charge/discharge unit, switch unit and level output unit;The first end of the switch unit and level input are single Member connection, the second end of the switch unit are connect with the first end of the charge/discharge unit, and third end and this of the switch unit fill The second end of discharge cell connects, and is connect with the level output unit, the third end ground connection of the charge/discharge unit;When the level Input unit input high level, and the load being connect with the third end of the switch unit is by the voltage at the third end of the switch unit When drawing is low level, before switch unit cut-off, charge/discharge unit electric discharge, when the voltage of the charge/discharge unit is less than in advance If when voltage, switch unit cut-off.By first aspect as it can be seen that in the present embodiment, by above-mentioned level shifting circuit, work as voltage When input terminal input high level, and occur external loading extremely so that the voltage at third end of switch unit is in low level when, I.e. level output voltage is low level at this time, and charge/discharge unit discharges at this time, until the voltage at the charge/discharge unit both ends When less than predeterminated voltage, switch unit cut-off is realized the isolation to load fault, is solved due to caused by external loading failure Level shifting circuit hangs dead problem.
In a kind of possible realization method, which may include switching tube;In the possible realization method, open It can be switching tube to close unit, provide a kind of specific device as switch unit and improve scheme in practical applications Realizability.
In alternatively possible realization method, which can be N-type Metal-oxide-semicondutor (N-Metal- Oxide-Semicondutor, NMOS) pipe, and drain electrode, grid and the source electrode of the NMOS tube be respectively switch unit first end, The third end of the second end of the switch unit and the switch unit.In the possible realization method, provide a kind of specific The switching tube can be NMOS type transistor, be used for control circuit on and off, in practical applications, the side of improving The realizability of case.
In alternatively possible realization method, which may include the first reference voltage, first resistor, second Resistance and capacitance, one end of the first resistor are connect with first reference voltage, the other end of the first resistor with this second One end of resistance connects, and is connect with one end of the capacitance;The other end of the capacitance is grounded;The other end of the first resistor is should The first end of charge/discharge unit, the other end of the second resistance are the second end of the charge/discharge unit.In the possible realization side In formula, a kind of particular circuit configurations of specific charge/discharge unit are provided, in practical applications, the scheme of improving must can be achieved Property and practicability.
In alternatively possible realization method, Vp=V2R1/ (R1+R2), wherein Vp is the voltage of capacitance, V2 first Reference voltage, R1 are the first resistor, and R2 is the second resistance.In the possible realization method, capacitance is provided The computational methods of voltage improve the realizability of scheme in practical applications.
In alternatively possible realization method, which is the cut-in voltage of NMOS tube.In the possible realization side In formula, when the switch unit is NMOS tube, which is the cut-in voltage of the NMOS tube.
In alternatively possible realization method, which may include the second reference voltage and 3rd resistor; One end of the 3rd resistor is connect with second reference voltage, and the other end of the 3rd resistor connects with the first end of the switch unit It connects.In the possible realization method, a kind of particular circuit configurations of specific level input unit are provided, in practical application In, improve the realizability of scheme.
In alternatively possible realization method, which includes the first reference voltage and the 4th resistance;This One end of four resistance is connect with first reference voltage, the other end of the 4th resistance connect with the third end of the switch unit and It is connect with the second end of the charge/discharge unit.
In alternatively possible realization method, when the level input unit input high level, and with the of the switch unit The load of three ends connection by the voltage at the third end of the switch unit draw be low level when, should before switch unit cut-off Charge/discharge unit discharges, and when the voltage of the charge/discharge unit is less than predeterminated voltage, switch unit cut-off may include:When this Band energy input unit input high level, and the load of the third end connection Ei of the switch unit is by the third end of the switch unit Voltage draw be low level when, the charge/discharge unit electric discharge, the switching means conductive;It grows up when the charge/discharge unit discharges When the voltage of preset duration and the charge/discharge unit is less than predeterminated voltage, switch unit cut-off.In the possible realization side In formula, defines the duration of charge/discharge unit electric discharge and when its tension discharge is to less than predeterminated voltage, switch unit ends, Therefore, switch unit is made to end by setting in preset duration, it is known that in level shifting circuit, the of switch unit When the duration that the level at three ends is in low level state is more than preset duration, illustrates that the level shifting circuit is in and hang death situation state.
The embodiment of the present application second aspect provides a kind of electronic equipment, which includes appointing in above-mentioned first aspect The level shifting circuit of one possible realization method.
As can be seen from the above technical solutions, the embodiment of the present application has the following advantages:
In level shifting circuit in the embodiment of the present application, which includes level input unit, charge and discharge Unit, switch unit, level output unit;Wherein, the first end of the switch unit is connect with the level input unit, the switch The second end of unit is connect with the first end of the charge/discharge unit, the third end of the switch unit and the second of the charge/discharge unit End connection, and connect with the level output unit, the third end ground connection of the charge/discharge unit.When the level input unit inputs height Level, and the load being connect with the third end of the switch unit by the third end of the switch unit draw be low level when, at this Before switch unit cut-off, charge/discharge unit electric discharge, when the voltage of the charge/discharge unit is less than predeterminated voltage, the switch list Member cut-off.Therefore, by above-mentioned level shifting circuit, when level input unit input high level, and it is different external loading occur When often so that the voltage at the third end of switch unit is in low level, i.e., voltage output voltage is low level at this time, at this time Charge/discharge unit discharges, when the voltage at the charge/discharge unit both ends is less than predeterminated voltage, switch unit cut-off, to It realizes isolation to the external loading, solves the problems, such as to hang dead due to level shifting circuit caused by external loading failure, make Normal work can be re-started by obtaining level shifting circuit.
Description of the drawings
Fig. 1 is a schematic diagram of the application level shifting circuit;
Fig. 2 is another schematic diagram of the application level shifting circuit.
Specific implementation mode
The embodiment of the present application provides a kind of level shifting circuit and electronic equipment, for being inputted when level input unit When high level, and occur external loading extremely so that the voltage at third end of switch unit is in low level when, charge/discharge unit Electric discharge, when the voltage of charge/discharge unit is less than predeterminated voltage, switch unit cut-off is realized the isolation to load fault, is solved Since level shifting circuit caused by external loading failure hangs dead problem.
Referring to Fig. 1, one embodiment of level shifting circuit includes in the embodiment of the present invention:
Level input unit 101, charge/discharge unit 102, switch unit 103 and level output unit 104;
The first end of switch unit 103 is connect with the level input unit 101, the second end of the switch unit 103 with should The first end of charge/discharge unit 102 connects, and the third end of the switch unit 103 is connect with the second end of the charge/discharge unit 102, And it is connect with the level output unit 104, the third end ground connection of the charge/discharge unit 102;
When 101 input high level of level input unit, and the load being connect with the third end of the switch unit 103 should When the voltage drawing at the third end of switch unit 103 is low level, before the switch unit 103 cut-off, the charge/discharge unit 102 Electric discharge, when the voltage of the charge/discharge unit 102 is less than predeterminated voltage, the switch unit 103 cut-off.
In the embodiment of the present application, when 101 input high level of level input unit, and with the of the switch unit 103 The load of three ends connection by the voltage at the third end of the switch unit 103 draw be low level when, in 103 cut-off of switch unit Before, the charge/discharge unit 102 electric discharge, when the voltage of the charge/discharge unit 102 is less than predeterminated voltage, which cuts Only.Therefore, by above-mentioned level shifting circuit, when level 101 input high level of input unit, and there is external loading exception When so that the voltage at the third end of switch unit 103 being in low level, i.e., output level is low level at this time, at this time charge and discharge list Member 102 is discharged, and when the voltage at 102 both ends of charge/discharge unit is less than predeterminated voltage, switch unit 103 ends, real Now to the isolation of load fault, solve the problems, such as due to level shifting circuit caused by external loading failure hang it is dead.
Referring to Fig. 2, in some embodiments of the present invention,
The switch unit of level shifting circuit in the embodiment of the present application includes switching tube;Wherein, which can be NMOS tube, drain electrode, grid and the source electrode of the NMOS tube be respectively the first end of the switch unit, the second end of the switch unit with And the third end of the switch unit.
The charge/discharge unit of the level translation circuit include the first reference voltage V2, first resistor R1, second resistance R2 with And capacitance C1;One end of first resistor R1 is connect with first reference voltage V2, the other end of first resistor R1 with this One end of two resistance R2 connects, and one end connection of capacitance C1;The other end of capacitance C1 is grounded;First resistor R1's is another One end is the first end of the charge/discharge unit, and the other end of second resistance R2 is the second end of the charge/discharge unit.
The level input unit of the level shifting circuit includes the second reference voltage V1 and 3rd resistor R3;The 3rd resistor One end of R3 is connect with second reference voltage V1, and the other end of 3rd resistor R3 is connect with the first end of the switch unit.
The level output unit of the level shifting circuit includes the first reference voltage V2 and the 4th resistance R4;4th resistance One end of R4 is connect with first reference voltage V2, and the other end of the 4th resistance R4 is connect with the first end of the switch unit.
The workflow of the level shifting circuit is described below by Fig. 2, upon power-up of the system, the first reference voltage V2 and the second reference voltage V1 rise to a burning voltage, at this point, capacitance C1 is charged by two paths:First It is capacitance C1 chargings that path, which is the first reference voltage V2 by first resistor R1,;Second paths are that the first reference voltage V2 passes through Second resistance R2 and the 4th resistance R4 chargings;
Since system just powers on, the IIC of level shifting circuit connection at this time is in idle condition, at this time level incoming level IIC-IN is pulled to the second reference voltage V1 by 3rd resistor R3, and level output level IIC-OUT is pulled to by the 4th resistance R4 First reference voltage V2, i.e. incoming level IIC-IN and level output level are high level, so at this point, the grid of NMOS tube Q1 Pole and source electrode are all high level, i.e., NMOS tube Q1 at this time is in cut-off state.
When IIC starts to work, and level input unit input incoming level IIC-IN be low level when, at this time due to The clamping action of NMOS tube Q1, at this time output level be pulled low to 0.3V or so, at this time the grid voltage of Q1 be equal to first reference Voltage V2, so the grid voltage of Q1 is more than the source voltage of Q1, i.e., the pressure difference of the source electrode of the grid of Q1 and Q1 is more than the Q1's Cut-in voltage, so NMOS tube Q1 is opened at this time, i.e. Q1 conductings, then incoming level IIC-IN=output levels IIC- OUT=0 volts.
Terminate when the incoming level IIC-IN of level input unit input exports low level, starts input high level;Output Level IIC-OUT is pulled upward to the first reference voltage by the 4th resistance R4;At this point, NMOS tube Q1 grid voltages and its source voltage phase Deng then, it is known that NMOS tube Q1 cut-off, IIC-IN and IIC-OUT is high level at this time.And at this time if the level of IIC-OUT When by the load of external connection down for low level, IIC-OUT can not be pulled to high level by the 4th resistance R4 at this time, so IIC-OUT is constantly in low level state, then NMOS tube Q1 is connected at this time, and is to pass through second resistance R2 by capacitance C1 at this time Electric discharge, during capacitance C1 discharges, which, which is in, hangs death situation state, i.e., can not execute the work of level conversion Make;When the voltage at the both ends capacitance C1 is less than the cut-in voltage of the Q1, the Q1 ends at this time;Due to IIC-OUT mono- to place In low level state, so capacitance C1 is unable to get effective charging, so Q1 is constantly in cut-off state, to realize a pair event The isolation for hindering device, protects IIC-IN.
It should be noted that in Fig. 2, first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4 and electricity It is specific value that appearance C1, which is by calculating and setting,.
When being discharged to the voltage at its both ends less than predeterminated voltage for capacitance C1, Q1 cut-offs, wherein the predeterminated voltage Vgsth, Vgsth are the cut-in voltage of NMOS tube Q1, and the voltage of capacitance C1 is Vp=V1R1/ (R1+R2), when capacitance C1 is put When electricity is to Vp < Vgsth, Q1 cut-offs, then the isolation to defective device may be implemented, the chain being effectively protected where IIC-IN Some load hangs dead caused iic bus and hangs dead problem in road.
In the embodiment of the present application, electric discharge duration of its voltage less than Vgsth is discharged to for capacitance C1 and is traditionally arranged to be 9 A IIC CLOCK, and the duration that discharges is related with the capacitance of capacitance C1 and voltage, so the capacitance for capacitance C1 needs It is arranged according to actual demand, and due to Vp=V1R1/ (R1+R2), so the voltage of capacitance C1 and the electricity of first resistor R1 and second R2 correlations are hindered, are designed as so must be calculated according to actual demand in design for the value of first resistor R1 and second resistance R2 Preferred resistance value.
Within the discharge time of capacitance C1, the level conversion can be determined in low level duration by IIC-OUT Circuit, which is in, hangs death situation state, that is, external loading occurs and abnormal state occur, then when more than preset duration and at this time capacitance When the voltage of C1 is less than predeterminated voltage, Q1 ends at this time, realizes the isolation to the external loading, solves due to external loading event Level shifting circuit hangs dead problem caused by barrier.
In the embodiment of the present application, connect when the level input unit input high level, and with the third end of the switch unit The load connect by the voltage at the third end of the switch unit draw be low level when, before switch unit cut-off, the charge and discharge Cell discharge, when the voltage of the charge/discharge unit is less than predeterminated voltage, switch unit cut-off.Therefore, pass through above-mentioned level When level input unit input high level, and there is external loading extremely so that the third end of switch unit in conversion circuit When voltage is in low level, i.e., voltage output voltage is low level at this time, and charge/discharge unit discharges at this time, until the charge and discharge When the voltage at electric unit both ends is less than predeterminated voltage, switch unit cut-off is realized the isolation to load fault, is solved due to event Level shifting circuit hangs dead problem caused by barrier load.
The embodiment of the present application provides a kind of electronic equipment, which includes such as the corresponding level of Fig. 1 or Fig. 2 The concrete structure of conversion circuit, the level shifting circuit please refers to the corresponding embodiments of above-mentioned Fig. 1 or Fig. 2, herein no longer It repeats.
The above, above example are only to illustrate the technical solution of the application, rather than its limitations;Although with reference to before Embodiment is stated the application is described in detail, it will be understood by those of ordinary skill in the art that:It still can be to preceding The technical solution recorded in each embodiment is stated to modify or equivalent replacement of some of the technical features;And these Modification or replacement, the spirit and scope of each embodiment technical solution of the application that it does not separate the essence of the corresponding technical solution.

Claims (10)

1. a kind of level shifting circuit, which is characterized in that the level shifting circuit includes:Level input unit, charge and discharge list Member, switch unit and level output unit;
The first end of the switch unit is connect with the level input unit, the second end of the switch unit and the charge and discharge The first end of electric unit connects, and the third end of the switch unit is connect with the second end of the charge/discharge unit, and with it is described Level output unit connects, the third end ground connection of the charge/discharge unit;
When the level input unit input high level, and the load being connect with the third end of the switch unit is by the switch When the voltage drawing at the third end of unit is low level, before switch unit cut-off, institute is worked as in the charge/discharge unit electric discharge When stating the voltage of charge/discharge unit less than predeterminated voltage, the switch unit cut-off.
2. level shifting circuit according to claim 1, which is characterized in that the switch unit includes switching tube.
3. level shifting circuit according to claim 2, which is characterized in that the switching tube includes N-type metal-oxide Object-semiconductor N metal-oxide-semiconductor, drain electrode, grid and the source electrode of the NMOS tube are respectively the first end of the switch unit, described open Close the second end of unit and the third end of the switch unit.
4. level shifting circuit according to any one of claims 1 to 3, which is characterized in that the charge/discharge unit Including the first reference voltage, first resistor, second resistance and capacitance;One end of the first resistor is with described first with reference to electricity Pressure connection, the other end of the first resistor is connect with one end of the second resistance, and is connect with one end of the capacitance;Institute State the other end ground connection of capacitance;The other end of the first resistor is the first end of the charge/discharge unit, the second resistance The other end be the charge/discharge unit second end.
5. level shifting circuit according to claim 4, which is characterized in that Vp=V2R1/ (R1+R2), wherein the Vp For the voltage of the capacitance, the V2 is first reference voltage, and the R1 is the first resistor, and the R2 is described the Two resistance.
6. level shifting circuit according to claim 4, which is characterized in that the predeterminated voltage is opening for the NMOS tube Open voltage.
7. the level shifting circuit according to any one of claims 1 to 6, which is characterized in that the level input is single Member includes the second reference voltage and 3rd resistor;One end of the 3rd resistor is connect with second reference voltage, and described The other end of three resistance is connect with the first end of the switch unit.
8. level shifting circuit according to any one of claims 1 to 7, which is characterized in that the level output is single Member includes first reference voltage and the 4th resistance;One end of 4th resistance is connect with first reference voltage, institute The other end for stating the 4th resistance connect with the third end of the switch unit and is connect with the second end of the charge/discharge unit.
9. the level shifting circuit according to any one of claim 1 to 8, which is characterized in that described to work as the level Input unit input high level, and the load being connect with the third end of the switch unit is by the third end of the switch unit When voltage drawing is low level, before switch unit cut-off, the charge/discharge unit electric discharge, when the charge/discharge unit When voltage is less than predeterminated voltage, the switch unit cut-off includes:
When the level input unit input high level, and the load being connect with the third end of the switch unit is by the switch When the voltage drawing at the third end of unit is low level, the charge/discharge unit electric discharge, the switching means conductive;
When the voltage that the duration of charge/discharge unit electric discharge is more than preset duration and the charge/discharge unit is less than predeterminated voltage When, the switch unit cut-off.
10. a kind of electronic equipment, which is characterized in that include the level shifting circuit as described in power 1 to power 9.
CN201810837133.2A 2018-07-26 2018-07-26 Level conversion circuit and electronic device Active CN108809291B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202011248260.2A CN112468135A (en) 2018-07-26 2018-07-26 Level conversion circuit and electronic device
CN201810837133.2A CN108809291B (en) 2018-07-26 2018-07-26 Level conversion circuit and electronic device

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Application Number Priority Date Filing Date Title
CN201810837133.2A CN108809291B (en) 2018-07-26 2018-07-26 Level conversion circuit and electronic device

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CN108809291B CN108809291B (en) 2020-12-04

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202068396U (en) * 2011-02-28 2011-12-07 广州视源电子科技有限公司 Level switch circuit
CN202841094U (en) * 2012-08-29 2013-03-27 深圳市汇顶科技股份有限公司 Level conversion circuit
US20140118049A1 (en) * 2012-10-30 2014-05-01 Kabushiki Kaisha Toshiba Level shift switch and electronic device with the same
CN104914712A (en) * 2015-06-05 2015-09-16 武汉盛帆电子股份有限公司 Self-sustaining clock module with energy storage function
CN107391407A (en) * 2017-07-26 2017-11-24 天翼爱音乐文化科技有限公司 A kind of both-way communication level difference conversion and voltage partition method, device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202068396U (en) * 2011-02-28 2011-12-07 广州视源电子科技有限公司 Level switch circuit
CN202841094U (en) * 2012-08-29 2013-03-27 深圳市汇顶科技股份有限公司 Level conversion circuit
US20140118049A1 (en) * 2012-10-30 2014-05-01 Kabushiki Kaisha Toshiba Level shift switch and electronic device with the same
CN104914712A (en) * 2015-06-05 2015-09-16 武汉盛帆电子股份有限公司 Self-sustaining clock module with energy storage function
CN107391407A (en) * 2017-07-26 2017-11-24 天翼爱音乐文化科技有限公司 A kind of both-way communication level difference conversion and voltage partition method, device

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CN108809291B (en) 2020-12-04

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