CN108807563A - A kind of detector metal nano array electrode and preparation method thereof - Google Patents
A kind of detector metal nano array electrode and preparation method thereof Download PDFInfo
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- CN108807563A CN108807563A CN201810413313.8A CN201810413313A CN108807563A CN 108807563 A CN108807563 A CN 108807563A CN 201810413313 A CN201810413313 A CN 201810413313A CN 108807563 A CN108807563 A CN 108807563A
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- 239000002184 metal Substances 0.000 title claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000004793 Polystyrene Substances 0.000 claims abstract description 12
- 239000004005 microsphere Substances 0.000 claims abstract description 12
- 229920002223 polystyrene Polymers 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000002356 single layer Substances 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- 125000003944 tolyl group Chemical group 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims 1
- 239000000084 colloidal system Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 238000001000 micrograph Methods 0.000 description 6
- 241000209094 Oryza Species 0.000 description 4
- 235000007164 Oryza sativa Nutrition 0.000 description 4
- 235000013339 cereals Nutrition 0.000 description 4
- 235000009566 rice Nutrition 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000013528 metallic particle Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 230000010356 wave oscillation Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 208000005623 Carcinogenesis Diseases 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- 230000036952 cancer formation Effects 0.000 description 1
- 231100000504 carcinogenesis Toxicity 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002737 fuel gas Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004449 solid propellant Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The present invention relates to a kind of detector metal nano array electrode and preparation method thereof, which is the metal nano array structure of high-sequential, and the metal nano array thickness of the transparent electrode is 10~50nm；Width is 10~100nm between the micropore of metal nano array；Metal nano array aperture is 50~500nm.Preparation method is：Colloid monolayer crystal template is assembled with monodisperse polystyrene microsphere, then utilizes magnetron sputtering technique, to deposited metal, sputtering time 5~10 minutes between template seam；Finally, it is cleaned by ultrasonic 20~30 minutes removal polystyrene microsphere templates through organic solvent, obtains the transparent electrode.The metal nano array structure of the transparent electrode of the present invention can take into account the fundamentals such as high transparency, high conductivity, high flexibility and low cost, have been widely used in photoelectric device, optical detector and semiconductor light emitting etc.；The preparation method of the present invention is simple for process, easily operated.
Description
Technical field
The present invention relates to a kind of preparations of photodetector nano-array electrode, belong to transparent conductive metallic film neck
Domain.
Background technology
Currently, photodetector is as important photoelectric device, in the monitoring of national defence, fuel gas and vehicle exhaust, fire
Calamity monitoring, solid fuel component analysis, cell carcinogenesis analysis etc. have broad application prospects, have high military affairs and
Civilian value.In general, traditional transparent electrode is based on transparent conductive oxide (TCO) film, mostly with tin-doped indium oxide (ITO)
For main study subject, most of photodetectors are used as euphotic electrode using interdigital electrode (MSM structures), but as transparent electricity
Prepared by pole, interdigital electrode generally use photoetching process, finger beam and finger spacing are several microns to tens microns, even up to several
Hundred microns.The structure, there are more serious " light-shading effect ", greatly reduces the quantum of detector to incident uv
Efficiency, device architecture have a major impact the photoelectric characteristic of detector, and exploring new panel detector structure has especially important meaning
Justice.
Invention content
The present invention exactly designs in view of the above-mentioned deficiencies in the prior art and provides a kind of detector and received with metal
Rice array electrode and preparation method thereof, it is high and stable, conductive the purpose is to provide ultraviolet one kind, visible light, infrared light transmittance
The metal nano array electrode that performance is high, manufacturing cost is cheap overcomes existing transparent electrode preparation process complicated, of high cost, electricity
Magnetic wave transmitance is low, the higher defect of resistivity.
The purpose of the present invention is achieved through the following technical solutions：
Technical solution of the present invention provides a kind of detector metal nano array electrode, it is characterised in that：The electrode is
Orderly metal nano array structure, to improve stability, the electric conductivity and higher that electrode is applied on the detector
Cross rate, the aperture D of micropore (1) is 50~500nm in metal nano array, and metal nano array thickness H is 10~50nm, metal
Width L is the 1/4~1/5 of aperture D between nano-array micropore.
In above-mentioned metal nano array structure, the aperture D of micropore (1) is four~five times of width L between micropore, such ratio
Example can ensure larger transmission area, by calculating generally 70%~80%, and the finger beam of existing interdigitated electrode structure
Equal with spacing is referred to, transmission area is only 50% or so, in addition, metal nano array thickness H of the present invention is 10~50nm,
It is thinner than existing interdigitated electrode structure, it is also helpful for the transmission of light, therefore transmitance can guarantee higher level.
Technical solution of the present invention additionally provides a kind of method preparing the detector metal nano array electrode, feature
It is：The monodisperse polystyrene microsphere that grain size is 50~500nm is assembled into using supersonic oscillations technology by this method first
Then single layer ordered array template utilizes magnetron sputtering technique deposited metal into the gap of the ordered array template, when sputtering
Between 5~10 minutes, finally, through organic solvent be cleaned by ultrasonic 20~30 minutes, remove polystyrene microsphere, obtain metal nano battle array
Row, wherein can by adjust magnetron sputtering operating pressure and power control metal nano array structure thickness and width,
Operating pressure is 0.5~1.5Pa, and when pressure is excessive, metallic atom deposition path is curve so that deposition not enough uniformly and deposits
Rate is smaller；When too little pressure, electron amount is very little, glow discharge can not be formed, by a large number of experiments, the technology of the present invention side
Operating pressure is determined as 0.5~1.5Pa by case, to obtain best comprehensive performance.The power of magnetron sputtering is 40~100W, work(
Rate has an impact aperture and pitch of holes, and power is too small, can not uniform sputter, cause array grid discontinuous, electric conductivity
It can reduce；Power is excessive, and aperture can become smaller, and transmitance can decline, and equally, by a large number of experiments, technical solution of the present invention is by magnetic
The power of control sputtering is determined as 40~100W, to obtain best comprehensive performance.
Metal nano array by semiconductor (2) and is used as the transparent conductive oxide (3) of positive electrode even as negative electrode
It connects and constitutes metal nano array electrode.
The ultraviolet of nano-array transparent electrode, visible light transmittance and electricity are modulated by changing the type of the metal deposited
Conductance, metals for deposition are aluminium, silver, gold, and oxidative resistance, the electric conductivity of these types of metal are preferable.
The organic solvent is toluene or tetrahydrofuran.
The advantages of technical solution of the present invention and effect are：Prepared metal nano array transparent electrode has higher ultraviolet
Light, visible light and infrared light transmittance, and there is high conductivity, technical process and manufacturing equipment are simple, of low cost, are suitable for big
Technical scale metaplasia is produced.The obtained metal nano array transparent electrode of the present invention can be widely applied to optical detector and semiconductor
Shine the fields of grade.
Description of the drawings
Fig. 1 is the transparent electrode structure schematic diagram prepared using metal nano array
Fig. 2 is the scanning electron microscope image of metal nano array transparent electrode in embodiment 1, Al, 290nm；
Fig. 3 is the scanning electron microscope image of metal nano array transparent electrode in embodiment 2, Ag, 336nm；
Fig. 4 is the scanning electron microscope image of metal nano array transparent electrode in embodiment 3, Au, 145nm.
Specific implementation mode
Technical solution of the present invention is further described below with reference to drawings and examples：
Embodiment 1 prepares Al microgrid transparent electrodes
Shown in attached drawing 1, prepared Al microgrid transparent electrodes are orderly metal nano array structure, and metal is received
The aperture D of micropore (1) is 290nm in rice array, and metal nano array thickness H is 10nm, width L between metal nano array micropore
For 72nm.
The method for preparing this kind of detector metal nano array electrode, it is characterised in that：This method uses ultrasound first
The monodisperse polystyrene microsphere that grain size is 350nm is assembled into colloid monolayer crystal template by wave oscillation technology, then utilizes magnetic
Control sputtering technology deposited metal Al into the gap of the ordered array template, sputtering time 5 minutes, finally, through organic solvent first
Benzene is cleaned by ultrasonic 30 minutes, removes polystyrene microsphere, dries, obtain the very high aluminum metal nano-array of the degree of order, wherein work
It is 0.5Pa to make pressure, and the power of magnetron sputtering is 40W；
Metal nano array by semiconductor (2) and is used as the transparent conductive oxide (3) of positive electrode even as negative electrode
It connects and constitutes metal nano array electrode.
Fig. 1 is the scanning electron microscope image of the present embodiment metal nano array transparent electrode, can from image
Go out, metallic particles sputters dense uniform, and aperture aligned orderly, Mesh connection is without interruption.
Embodiment 2 prepares Ag microgrid transparent electrodes
Shown in attached drawing 2, prepared Ag microgrid transparent electrodes are orderly metal nano array structure, and metal is received
The aperture D of micropore (1) is 336nm in rice array, and metal nano array thickness H is 25nm, width L between metal nano array micropore
For 95nm.
The method for preparing this kind of detector metal nano array electrode, it is characterised in that：This method uses ultrasound first
The monodisperse polystyrene microsphere that grain size is 580nm is assembled into colloid monolayer crystal template by wave oscillation technology, then utilizes magnetic
Control sputtering technology deposited metal Ag into the gap of the ordered array template, sputtering time 6 minutes, finally, through organic solvent first
Benzene is cleaned by ultrasonic 30 minutes, removes polystyrene microsphere, dries, obtain the very high Ag metal nano arrays of the degree of order, wherein work
It is 1Pa to make pressure, and the power of magnetron sputtering is 60W；
Metal nano array by semiconductor (2) and is used as the transparent conductive oxide (3) of positive electrode even as negative electrode
It connects and constitutes metal nano array electrode.
Fig. 2 is the scanning electron microscope image of the present embodiment metal nano array transparent electrode, can from image
Go out, metallic particles sputters dense uniform, and aperture aligned orderly, Mesh connection is without interruption.
Embodiment 3 prepares Au microgrid transparent electrodes
Shown in attached drawing 3, prepared Au microgrid transparent electrodes are orderly metal nano array structure, and metal is received
The aperture D of micropore (1) is 145nm in rice array, and metal nano array thickness H is 50nm, width L between metal nano array micropore
For 55nm.
The method for preparing this kind of detector metal nano array electrode, it is characterised in that：This method uses ultrasound first
The monodisperse polystyrene microsphere that grain size is 310nm is assembled into colloid monolayer crystal template by wave oscillation technology, then utilizes magnetic
Control sputtering technology deposited metal Au into the gap of the ordered array template, sputtering time 8 minutes, finally, through organic solvent first
Benzene is cleaned by ultrasonic 30 minutes, removes polystyrene microsphere, dries, obtain the very high Au metal nano arrays of the degree of order, wherein work
It is 1.5Pa to make pressure, and the power of magnetron sputtering is 100W；Metal nano array by semiconductor (2) and is used as negative electrode
The transparent conductive oxide (3) of positive electrode connects and composes metal nano array electrode.
Fig. 3 is the scanning electron microscope image of the present embodiment metal nano array transparent electrode, can from image
Go out, by selecting larger sputtering power and operating pressure, obtains the Au nano array structures of aperture very little, metallic particles sputtering
Dense uniform, aperture aligned orderly, Mesh connection is without interruption.
Claims (4)
1. a kind of detector metal nano array electrode, it is characterised in that：The electrode is orderly metal nano array structure,
The aperture D of micropore (1) is 50~500nm in metal nano array, and metal nano array thickness H is 10~50nm, metal nano
Width L is the 1/4~1/5 of aperture D between array micropore.
2. a kind of method preparing detector metal nano array electrode described in claim 1, it is characterised in that：This method
The monodisperse polystyrene microsphere that grain size is 50~500nm is assembled into single layer oldered array using supersonic oscillations technology first
Template, then utilize magnetron sputtering technique deposited metal into the gap of the ordered array template, sputtering time 5~10 minutes,
Finally, it is cleaned by ultrasonic 20~30 minutes through organic solvent, removes polystyrene microsphere, obtain metal nano array, wherein work
Pressure is 0.5~1.5Pa, and the power of magnetron sputtering is 40~100W；
Metal nano array connect structure as negative electrode, by semiconductor (2) with the transparent conductive oxide (3) for being used as positive electrode
At metal nano array electrode.
3. the method according to claim 2 for preparing detector metal nano array electrode, it is characterised in that：
Deposition is aluminium, silver, gold with metal.
4. the method according to claim 2 for preparing detector metal nano array electrode, it is characterised in that：It is described to have
Solvent is toluene or tetrahydrofuran.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810413313.8A CN108807563A (en) | 2018-05-02 | 2018-05-02 | A kind of detector metal nano array electrode and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810413313.8A CN108807563A (en) | 2018-05-02 | 2018-05-02 | A kind of detector metal nano array electrode and preparation method thereof |
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| CN201810413313.8A Pending CN108807563A (en) | 2018-05-02 | 2018-05-02 | A kind of detector metal nano array electrode and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023016274A1 (en) * | 2021-08-09 | 2023-02-16 | 中国科学院上海微系统与信息技术研究所 | Miniature laser radar receiving apparatus |
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|---|---|---|---|---|
| CN101246911A (en) * | 2008-03-10 | 2008-08-20 | 北京航空航天大学 | Metal microgrid transparent electrode and method for producing the same |
| CN102368508A (en) * | 2011-11-01 | 2012-03-07 | 吉林大学 | Sodium tantalate film ultraviolet light detector and preparation method thereof |
| CN102383102A (en) * | 2011-09-29 | 2012-03-21 | 中国航空工业集团公司北京航空材料研究院 | Magnetic nano anti-dot array film and preparation method thereof |
| CN102660740A (en) * | 2012-05-29 | 2012-09-12 | 东南大学 | Graphene and metal nanoparticle composite film preparation method |
| CN103441154A (en) * | 2013-06-26 | 2013-12-11 | 北京科技大学 | ZnO nanometer array ultraviolet detector and manufacturing method thereof |
-
2018
- 2018-05-02 CN CN201810413313.8A patent/CN108807563A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246911A (en) * | 2008-03-10 | 2008-08-20 | 北京航空航天大学 | Metal microgrid transparent electrode and method for producing the same |
| CN102383102A (en) * | 2011-09-29 | 2012-03-21 | 中国航空工业集团公司北京航空材料研究院 | Magnetic nano anti-dot array film and preparation method thereof |
| CN102368508A (en) * | 2011-11-01 | 2012-03-07 | 吉林大学 | Sodium tantalate film ultraviolet light detector and preparation method thereof |
| CN102660740A (en) * | 2012-05-29 | 2012-09-12 | 东南大学 | Graphene and metal nanoparticle composite film preparation method |
| CN103441154A (en) * | 2013-06-26 | 2013-12-11 | 北京科技大学 | ZnO nanometer array ultraviolet detector and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023016274A1 (en) * | 2021-08-09 | 2023-02-16 | 中国科学院上海微系统与信息技术研究所 | Miniature laser radar receiving apparatus |
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Application publication date: 20181113 |