CN208954995U - A kind of thin-film solar cells - Google Patents
A kind of thin-film solar cells Download PDFInfo
- Publication number
- CN208954995U CN208954995U CN201821144027.8U CN201821144027U CN208954995U CN 208954995 U CN208954995 U CN 208954995U CN 201821144027 U CN201821144027 U CN 201821144027U CN 208954995 U CN208954995 U CN 208954995U
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- China
- Prior art keywords
- layer
- thin
- solar cells
- film
- solar battery
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- 239000010409 thin film Substances 0.000 title claims abstract description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000004332 silver Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 14
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims abstract description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 8
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a kind of thin-film solar cells, the solar battery includes: the electrode layer in the upper and lower surface setting of base, and the solar battery thin film, buffer layer, indium-zinc oxide film and at least one layer of silver conductive layer that set gradually on the electrode layer of base upper surface setting；The upper and lower surface of silver conductive layer is provided with transparency conducting layer.The utility model embodiment provides a kind of structure of novel solar battery, combines the electric conductivity and translucency of different materials, so that the conversion ratio of solar battery is effectively improved, is conducive to the raising of battery performance.
Description
Technical field
The utility model relates to technical field of solar batteries more particularly to a kind of thin-film solar cells.
Background technique
Solar battery has an important strategic importance to solving energy crisis and environmental pollution as new energy, and silicon substrate
For thin-film solar cells because its preparation process is simple, the low advantage that consumes energy has obtained extensive concern.
The mode of current tempered-glass decorative building is extremely widespread, and solar panel is applied and is obtained in this field
To extensive concern, this has pushed the development of Photovoltaic Building Integration.Transparent membrane solar battery due to its translucence and
Have the function of that power generation is undoubtedly optimal selection.
Currently, transparent silicon-based film solar cells are all made of the preparation of pin structure, are used as electrode, building by p layers and n layers
Built in field, preparation process is relative complex, and process conditions are more demanding.
Utility model content
Of the existing technology in order to solve the problems, such as, at least one embodiment of the utility model provides a kind of film too
Positive energy battery.
In a first aspect, the embodiment of the invention provides a kind of thin-film solar cells, comprising: set in the upper and lower surface of base
The electrode layer set, and the base upper surface setting electrode layer on set gradually solar battery thin film, buffer layer,
Indium-zinc oxide film and transparency conducting layer；The transparency conducting layer includes: at least two layers of transparency conducting layer, and every two layers described
Silver conductive layer is provided between bright conductive layer.
Based on the above-mentioned technical proposal, the utility model embodiment can also make following improvement.
With reference to first aspect, in the first embodiment of first aspect, the transparency conducting layer includes: tin indium oxide
Film.
With reference to first aspect, in second of embodiment of first aspect, the thickness of the transparency conducting layer are as follows: 10nm-
50nm；The thickness of the silver conductive layer is less than 20nm.
Second of embodiment with reference to first aspect, in the third embodiment of first aspect, the transparency conducting layer
Thickness be 30nm；The silver conductive layer with a thickness of 10nm.
With reference to first aspect, in the 4th kind of embodiment of first aspect, the electrode layer includes: molybdenum.
With reference to first aspect with the first, second, third, fourth of first aspect in embodiment, the 5th of first aspect the
In kind embodiment, the buffer layer includes: cadmium sulfide.
The above-mentioned technical proposal of the utility model has the advantages that the utility model embodiment mentions compared with prior art
The structure for having supplied a kind of novel solar battery combines the electric conductivity and translucency of different materials, so that solar battery
Conversion ratio be effectively improved, be conducive to the raising of battery performance.
Detailed description of the invention
Fig. 1 is a kind of preparation method flow diagram of thin-film solar cells provided by the embodiment of the utility model；
Fig. 2 is a kind of film solar battery structure schematic diagram that another embodiment of the utility model provides.
In figure: 1: base；2: electrode layer；3: solar battery conversion zone；4: buffer layer；5: indium-zinc oxide film；6:
Silver conductive layer；7: transparency conducting layer.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched
The embodiment stated is a part of the embodiment of the utility model, instead of all the embodiments.Based on the reality in the utility model
Apply example, those of ordinary skill in the art's every other embodiment obtained without making creative work, all
Belong to the range of the utility model protection.
As shown in Figure 1, a kind of preparation method of thin-film solar cells provided by the embodiment of the utility model, the preparation side
Method includes:
S1, a base is provided；Depositing electrode layer is distinguished in the upper and lower surface of base.
S2, solar battery conversion zone is prepared in the electrode layer surface for being located at base upper surface.
S3, buffer layer is prepared in solar battery reaction layer surface.
S4, on the buffer layer surface prepare indium-zinc oxide film.
S5, at least one layer of silver conductive layer is prepared in indium-zinc oxide film surface；The upper and lower surface of silver conductive layer is respectively provided with
There is transparency conducting layer.
It, can be by utilizing magnetron sputtering method in the front and back sides of base in physical vapor deposition equipment in above-described embodiment
Depositing electrode layer, wherein the material of electrode layer includes: molybdenum, then the base that deposited electrode layer is co-evaporated by vacuum equipment and is made
Standby solar battery conversion zone, wherein solar battery conversion zone can be CIGS thin film, i.e. solar battery thin film, have light
Absorbability is strong, and power generation stability is good, high conversion efficiency, daytime generating dutation it is long, generated energy is high, production cost is low and the energy
Then the advantages that return period is short prepares buffer layer in solar battery reaction layer surface, buffer layer includes cadmium sulfide, such as logical
It crosses immersion method and prepares cadmium sulfide layer in solar battery reaction layer surface, then on the surface of cadmium sulfide layer to prepare indium-zinc oxide thin
Film prepares a multilayer translucent construction on the surface of indium-zinc oxide film later, and the electric conductivity of the silver conductive layer is better than thereon
The transparency conducting layer of lower surface, but translucency is weaker than transparency conducting layer, by being used in combination with two kinds of conductive layers, saturating
It keeps in balance in photosensitiveness and electric conductivity, improves the transformation efficiency of solar battery, to improve the generating efficiency of solar battery.
In the present embodiment, which can be used any materials production, for example make base using stainless steel coiled material, reduce
Cost of manufacture.
It in the present embodiment, include: magnetron sputtering method, physics gas in the method for base's upper and lower surface depositing electrode layer respectively
Mutually deposition, ion beam deposition or electron beam evaporation.
In the present embodiment, the material of transparency conducting layer includes: tin indium oxide；The material of silver conductive layer includes: silver.
In the present embodiment, the thickness of transparency conducting layer are as follows: 10nm~50nm；The thickness of silver conductive layer is less than 20nm.
In the present embodiment, the thickness of transparency conducting layer is 30nm；Silver conductive layer with a thickness of 10nm.
In the present embodiment, the preparation method of buffer layer includes: immersion method.
In the present embodiment, the material of buffer layer includes: cadmium sulfide.
In the present embodiment, the preparation method of indium-zinc oxide film, transparency conducting layer and silver conductive layer includes: that magnetic control splashes
Penetrate method.
As shown in Fig. 2, the utility model embodiment provides a kind of thin-film solar cells, comprising: above and below base
The electrode layer of surface setting, and the solar battery conversion zone, slow set gradually on the electrode layer of base upper surface setting
Rush layer, indium-zinc oxide film and at least one layer of silver conductive layer；The upper and lower surface of silver conductive layer is provided with transparency conducting layer.
In the present embodiment, transparency conducting layer includes: tin indium oxide；ITO, i.e. tin indium oxide are a kind of indium (III group) oxygen
The mixture of compound (In2O3) and tin (IV race) oxide (SnO2), usual mass ratio are 90%In2O3,10%SnO2.It
It is transparent when film-form, show slightly dark brown.In bulk state, it is in yellow inclined grey.ITO/Ag/ITO more traditional ITO layer structure phase
Than can all be greatly improved in electric conductivity and through upper, be conducive to the raising of battery performance, transmitance can be promoted from 85%
To 90% or so, transfer efficiency can promote 0.5% or so.
In the present embodiment, the thickness of transparency conducting layer are as follows: 10nm-50nm；In order to guarantee the light transmittance of silver conductive layer, institute
It is less than 20nm with the thickness of silver conductive layer, for example, the thickness of transparency conducting layer can be 30nm；The thickness of silver conductive layer can be
10nm。
In the present embodiment, electrode layer includes: molybdenum.
In the present embodiment, buffer layer includes: cadmium sulfide.
Finally, it should be noted that above embodiments are only to illustrate the technical solution of the utility model, rather than its limitations；
Although the utility model is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that:
It is still possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is carried out etc.
With replacement；And these are modified or replaceed, various embodiments of the utility model technology that it does not separate the essence of the corresponding technical solution
The spirit and scope of scheme.
Claims (6)
1. a kind of thin-film solar cells characterized by comprising in the electrode layer that the upper and lower surface of base is arranged, Yi Ji
The solar battery thin film that is set gradually on the electrode layer of base upper surface setting, buffer layer, indium-zinc oxide film and
At least one layer of silver conductive layer；The upper and lower surface of the silver conductive layer is provided with transparency conducting layer.
2. thin-film solar cells according to claim 1, which is characterized in that the transparency conducting layer includes: indium oxide
Tin film.
3. thin-film solar cells according to claim 1, which is characterized in that the thickness of the transparency conducting layer are as follows:
10nm-50nm；The thickness of the silver conductive layer is less than 20nm.
4. thin-film solar cells according to claim 3, which is characterized in that the thickness of the transparency conducting layer is
30nm；The silver conductive layer with a thickness of 10nm.
5. thin-film solar cells according to claim 1, which is characterized in that the electrode layer includes: molybdenum.
6. any thin-film solar cells in -5 according to claim 1, which is characterized in that the buffer layer includes: sulphur
Cadmium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821144027.8U CN208954995U (en) | 2018-07-18 | 2018-07-18 | A kind of thin-film solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821144027.8U CN208954995U (en) | 2018-07-18 | 2018-07-18 | A kind of thin-film solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208954995U true CN208954995U (en) | 2019-06-07 |
Family
ID=66732095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821144027.8U Expired - Fee Related CN208954995U (en) | 2018-07-18 | 2018-07-18 | A kind of thin-film solar cells |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208954995U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598185A (en) * | 2018-07-18 | 2018-09-28 | 北京铂阳顶荣光伏科技有限公司 | A kind of thin-film solar cells preparation method and thin-film solar cells |
| CN110061088A (en) * | 2019-04-26 | 2019-07-26 | 潮州市亿加光电科技有限公司 | A kind of CIGS solar film battery of flexible substrates and preparation method thereof |
-
2018
- 2018-07-18 CN CN201821144027.8U patent/CN208954995U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598185A (en) * | 2018-07-18 | 2018-09-28 | 北京铂阳顶荣光伏科技有限公司 | A kind of thin-film solar cells preparation method and thin-film solar cells |
| CN110061088A (en) * | 2019-04-26 | 2019-07-26 | 潮州市亿加光电科技有限公司 | A kind of CIGS solar film battery of flexible substrates and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Patentee after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210430 Address after: 518000 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Patentee after: Hongyi Technology Co.,Ltd. Address before: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Patentee before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190607 |
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| CF01 | Termination of patent right due to non-payment of annual fee |