CN108807451A - Wafer level thermoelectric energy collector - Google Patents
Wafer level thermoelectric energy collector Download PDFInfo
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- CN108807451A CN108807451A CN201811096766.9A CN201811096766A CN108807451A CN 108807451 A CN108807451 A CN 108807451A CN 201811096766 A CN201811096766 A CN 201811096766A CN 108807451 A CN108807451 A CN 108807451A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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Abstract
The present invention relates to wafer level thermoelectric energy collectors.Integrated circuit may include substrate and the dielectric layer that is formed on substrate.Multiple p-type thermoelectric elements and multiple N-shaped thermoelectric elements may be provided in dielectric layer.P-type thermoelectric element and N-shaped thermoelectric element can be connected in series with, and be replaced between p-type and n-type thermoelectric elements simultaneously.
Description
The application be the applying date be on May 8th, 2015, application No. is 201510229765.7, entitled " wafer scales
The divisional application of the application for a patent for invention of thermoelectric energy collector ".
Related application
The application is the extendible portion for the Application U.S. Serial No 13/736783 submitted on January 8th, 2013, is drawn herein
Enter as reference.
Technical field
The theme of the application is related to a kind of thermoelectric energy collection, and relates more specifically to a kind of integrated single-chip thermoelectric power
Harvest.
Background technology
Hot (for example, thermal energy) is converted into electric energy by thermal power unit.Temperature difference between the hot and cold sides of thermal power unit exists
Dislocation charge carrier produces electricl energy in the semi-conducting material of the thermal power unit.The material of thermal power unit is selected such that it
It is the good conductor of electricity to generate electric current flowing, but the non-conductor of heat is to keep the necessary heat between the bilateral of thermal power unit poor
It is different.When the side of the thermoelectric element is placed on heat source (for example, engine or circuit) nearby, temperature difference can be generated, is made
The side for obtaining the thermoelectric element is hotter.
The energy fluence generated by the thermal power unit is set at least dependent on the type and thermoelectricity of material in the temperature difference, thermal power unit
Standby size.For example, there is the electric current flowing that larger temperature difference can generate bigger between the hot and cold sides of equipment.In addition,
Thermal power unit with the larger surface area and/or larger material that generate electric current flowing conventionally generates more electric energy.This
The application that a little different factors depend on using thermal power unit is adjusted.
The size for increasingly focusing on reducing thermal power unit is used for new application (for example, from sustainable sensor or movement
Equipment), and generate its can be integrated circuit a part thermal power unit.However, the size of scaled thermoelectric element
New challenge is introduced, enough energy are such as generated and keeps manufacturing cost relatively low.In addition, the conventional material in thermoelectric device
And/or arrangement of materials can not provide required energy for certain applications.Other challenges include processing influences phase in integrated circuits
The parasitic heat loss of adjacent component.
Therefore, present inventor have determined that this field needs to include the small-scale thermoelectric equipment of high-energy density to be at low cost
And solve parasitic heat loss.
Description of the drawings
Accordingly, it is to be understood that the feature of the present invention, multiple attached drawings are described as follows.It should be noted that appended attached drawing is only
The specific embodiment of the disclosure is shown, therefore is not construed as the limitation of its range, because the present invention may include other having on an equal basis
The embodiment of effect.
Figure 1A and 1B shows the exemplary configuration of thermoelectric energy collector according to the ... of the embodiment of the present invention.
Fig. 2 shows the stereograms of thermoelectric energy collector 100 according to the ... of the embodiment of the present invention.
Fig. 3 shows the exemplary configuration of thermoelectric energy collector according to another embodiment of the present invention.
Fig. 4 shows the exemplary configuration of the thermoelectric energy collector with closure construction according to embodiments of the present invention.
Fig. 5 shows the exemplary configuration of thermoelectric energy collector according to another embodiment of the present invention.
Fig. 6 A-6C show the exemplary configuration of thermoelectric energy collector according to another embodiment of the present invention.
Fig. 7 A-7C show the exemplary configuration of thermoelectric energy collector according to another embodiment of the present invention.
Fig. 8 shows the exemplary configuration of thermoelectric power collector according to the ... of the embodiment of the present invention.
Fig. 9 A-9B show the exemplary configuration of thermoelectric energy collector according to another embodiment of the present invention.
Specific implementation mode
The embodiment of the present invention can provide the thermoelectric energy collector that can be provided in integrated circuits.In one embodiment
In, dielectric layer that integrated circuit may include substrate and be formed on substrate.Multiple p-type thermoelectric elements and multiple N-shaped thermoelectric elements
It may be provided in dielectric layer.P-type thermoelectric element and N-shaped thermoelectric element can be electrically connected in series in an alternating fashion.It is applied in response to heat
It is added on the side of thermoelectric element, electron stream can be generated in each thermoelectric element to provide electric energy.
In another embodiment, when replacing between p-type and n-type thermoelectric elements, block can be arranged on substrate
To be enclosed in the multiple p-types and N-shaped thermoelectric element that are arranged on substrate and are connected in series with.Vacuum or low pressure can keep thermoelectric element it
Between.Block and vacuum or low pressure can be reduced to the parasitic heat loss of integrated circuit peripheral region, to remain along thermoelectric element
Larger thermal gradient.
In one embodiment, sealing element can be formed by the dummy structures around active thermoelectric element.Vacuum is low
Pressure can keep between thermoelectric element and/or within sealing.Dummy structures can be ring-shaped form, and can be in manufacture work
It is formed using some identical steps in sequence, is used to form active thermoelectric element.Sealing element can be used for preventing from manufacturing
Pollutant enters active thermoelectric element in the process.
In one embodiment, active thermoelectric element can be with horizontal tilt and vertical inclination, i.e., relative to entire integrated electricity
The thermal gradient direction on road is tilted in two dimensions, to maximize hot length (the thermal energy stream by each movable thermoelectric element
Dynamic length).
In one embodiment, all multiple thermoelectric elements being connected in series with may include only one kind of thermoelectricity member
Part, that is, the only N-shaped being connected in series with or only p-type.Pure N-shaped or pure p-type thermoelectric energy collector can be more simply to use more
Few processing step manufacture.
Figure 1A shows that thermoelectric energy according to the ... of the embodiment of the present invention collects 100 exemplary configuration.Thermoelectric energy collector
100 may include 130 top of substrate layer and in dielectric layer 120 thermoelectric element 110A, 110B.Multiple thermoelectric element 110A,
110B may include the element (for example, p-type and N-shaped) of different types of thermoelectric material.Thermoelectric element 110A, 110B can be mutual
Connection so that in response to the temperature gradient between the first side (for example, hot side) and the second side (for example, cold survey), each thermoelectricity member
Part contributes to the gross energy provided by the thermoelectric energy collector 100.Thermal contact layer 140 can carry above dielectric layer 120
For to support the temperature gradient between first side and the second side.Thermal contact layer 140 can be by as good thermal conductor
Material be made.
As shown in Figure 1A, thermoelectric power collector 100 may include the vertical structure for being provided with dielectric layer 120, and can be by
Be formed as single wafer.The wafer level structure of thermoelectric energy collector 100 allow it with substrate 130 on or other neighbouring collection
It is integrated at circuit block (being not shown in Figure 1A).
As indicated, thermoelectric element 110A, 110B may include different types of thermoelectric material (for example, p-type and N-shaped).It rings
It should can be chosen so as to from thermoelectric element in the temperature difference between two ends, the thermoelectric material of thermoelectric element 110A, 110B
One end generates the charge carriers flow of opposed polarity to opposite end.In the thermoelectric element 110A including p-type material, positive electricity load
Body flow to opposite cold end from hot junction.In contrast, in the thermoelectric element 110B including n-type material, electronics is from heat source
One end flow to colder opposite end.
Multiple thermoelectric element 110A, 110B can connect into array, and be handed in adjacent thermoelectric element 110A and 110B
For the type (for example, between N-shaped and p-type) of material.In this way, across the voltage of thermoelectric element 110A and 110B exploitation
And/or electric current can be summed together with generate be more than thermoelectric element 110A and 110B carry out respectively bigger aggregation voltage with/
Or electric current.For example, the thermoelectric element 110A with p-type material can be connected in series with the thermoelectric element 110B with n-type material.Thermoelectricity
Element 110A, 110B can be arranged so that all adjacent thermoelectric elements of given thermoelectric element include being different from given thermoelectricity
The material type of the material of element.The output of the array of thermoelectric element 110A and 110B can be connected in parallel, in a particular application
Energy needed for providing.Interconnection 150 can connect thermoelectric element 110A and 110B to adjacent thermoelectric element 110A and 110B.
Although each thermoelectric element 110A, 110B can provide a small amount of energy (for example, millivolt), in an array connection heat
Electric device 110A, 110B can provide the higher-energy needed for specific application.When heat is applied to the one of the thermoelectric power collector 100
When side, the electronics in the thermoelectric element 110A with p-type material will flow to high temperature side from the low temperature side of thermoelectric element 110A, and
Electronics in the thermoelectric element 110B with n-type material will flow to low temperature side from the high temperature side of thermoelectric element 110B.Therefore, such as
Fruit thermoelectric element 110A is connected in series with thermoelectric element 110B, forms thermocouple, and electronics will flow to p from the cold side of p-type material
The hot side of proximate matter material enters the hot side of n-type material via interconnection 150, and enters the cold side of n-type material.In each thermoelectric element
Energy caused by 110A, 110B is combined and is provided in the output end of thermoelectric power collector 100.
Figure 1B shows to be equivalent to the circuit of thermoelectric power collector 100 shown in Figure 1A.Across thermoelectric element 110A and
The voltage of 110B development is indicated by Vp and Vn.Each voltage and or current can be added together to provide polymerization output voltage
Vout, and in the case of drainage, voltage is added to obtain the useful voltage that can drive conventional low power electronic circuit.
Figure 1A is not to scale, but describes the rough size of collector 100 in one embodiment.Thermoelectric element
110A, 110B can have the shape on the surface for maximizing thermoelectric element 110A, 110B for being adjacent to dielectric layer 120.Thermoelectricity member
Part 110A, 110B can have rectangular shape, both sides to have the longer end adjacent to dielectric layer 120, and adjacent to interconnection 150
Short side.In another embodiment, at least side of thermoelectric element 110A, 110B can also be square.
The material of thermoelectric element 110A, 110B can be so selected so that the thermal resistor of thermoelectric element 110A, 110B
Less than the thermal resistance of dielectric layer 120 so that the dielectric layer will not cause too many thermal shunt.The height of thermoelectric element 110A, 110B
There is still a need for ensure that good temperature difference is maintained between the hot and cold sides of thermoelectric element 110A, 110B for thermal resistance.Thermoelectricity member
The thermal resistance of part 110A, 110B can be by controlling the doped level of thermoelectric element 110A, 110B or by introducing dispersing element
Photon equilibrium state to increase thermoelectric element 110A, 110B increases, without influencing too many electrical conduction.With thermoelectric element 110A,
The opposite end of 110B is compared, the concentration of doped level or scattered elements can increase in one end of thermoelectric element 110A, 110B or
It reduces.
For example, thermoelectric element 110A can be p-type BixSb2-xTe3 and thermoelectric element 110B can be N-shaped
Bi2Te3-xSex.Dielectric layer 120 can be polyimides, because it has low thermal conductivity, help to add thermoelectric element
Work.Thermal contact layer 140 can be any electrical isolation but the layer of heat conduction.In one embodiment, thermal contact layer 140 can be by multilayer
Composition.For example, the thermal contact layer 140 may include thin non-conductive layer, such as oxide or nitride and one or more of tops
The thicker metal layer in end is to improve heat transfer.Thermal contact layer 140 can provide the insulation to interconnection layers 150 in interface, with
Prevent the electric short circuit of interconnection layers 150.Substrate 130 can have any semiconductor substrate of adequate thickness to promote in bottom side
Heat transfer.Although placement substrate 130 is cold side and top thermal contact layer 140 is that hot side is shown, which is also used as
Substrate 130 is hot side and top thermal contact layer 140 is cold side.
The interconnection 150 can be included in the hot and cold sides of thermoelectric element, to connect adjacent thermoelectric element.Thermoelectricity member
Part may include the be coupled in the hot side of the first thermoelectric element first interconnection and be coupled in the cold side of the second thermoelectric element the
Two interconnection.Can be leading-out terminal to be connected to other circuits in the interconnection 150 of first and last thermoelectric element 110A, 110B
Element (for example, external circuit, load or energy storage devices).Interconnection 150 may include semi-conducting material or metal connector
(for example, gold, copper or aluminium).
In the exemplary embodiment, dielectric layer 120 can be the material of high dielectric breakdown, such as polyimides, titanium dioxide
Silicon, silicon nitride etc..Dielectric layer 120 can be with electrical insulation thermoelectric element 110A, 110B.Dielectric layer 120 can inhibit heat conduction remote
From thermoelectric element 110A, 110B.Dielectric layer 120 can have than the heat low in substrate 130 and/or thermoelectric element 110A, 110B
Conductance.Dielectric layer 120 with thermal shunt thermoelectric element 110A, 110B and can allow in four skirts around thermoelectric element 110A, 110B
Thermal gradient is spanned thermoelectric element 110A, 110B exploitation and the most of heat of permission goes to the side of thermoelectric power collector 100.
Compared with the thermal resistance of substrate 130 and/or thermal contact layer 140, the high thermal resistance of thermoelectric element 110A, 110B make thermal gradient across heat
Electric device lands rather than thermal contact layer or substrate 130.Therefore, maximum temperature difference is maintained at thermoelectric element 110A, 110B
Between hot and cold sides.
Barrier metal 160 may include between thermoelectric element 110A, 110B and interconnection 150, to be isolated from metal interconnection 150
The semi-conducting material of thermoelectric element 110A, 110B, while keeping being electrically connected between thermoelectric element 110A, 110B and interconnection 150
It connects.Barrier metal 160 can be by including to prevent the interconnection 150 to be diffused into the semi-conducting material of thermoelectric element 110A, 110B.
When heat is applied to side (for example, hot side) of thermoelectric power collector 100, electronics is with p-type material 110A's
It flows in thermoelectric element, and is flowed in another direction in the thermoelectric element 110B with n-type material in one direction.Because
Thermoelectric element 110A, 110B are connected in series with, and energy combination in thermoelectric power to receive caused by each thermoelectric element 110A, 110B
The output of storage 100 provides combined energy.Incoming heat is distributed to the hot side of thermoelectric element 110A, 110B by thermal contact layer 140,
And substrate 130 cools down the low temperature side of thermoelectric element 110A, 110B simultaneously.
Fig. 2 shows the perspective views according to the thermoelectric energy collector 200 of the embodiment of the present disclosure.As shown in Fig. 2, thermoelectric element
210A, 210B are on substrate layer 230.Dielectric layer 220 is arranged above substrate layer 230, with the thermoelectricity electrically isolated from one
Element 210A, 210B.Thermoelectric element 210A, 210B can be arranged array so that in adjacent thermoelectric element 210A and
The type (for example, between N-shaped and p-type) of thermoelectric element 210A, 210B while alternative materials in 210B.Interconnection 250 can connect
Connect thermoelectric element 210A, 210B.The heat of 240 dispersible application of thermal contact layer is to thermoelectric element 210A, 210B.
Fig. 3 shows that thermoelectric energy in accordance with another embodiment of the present invention collects 300 exemplary configuration.Thermoelectric energy
Collector 300 may include multiple thermoelectric element 310A in the dielectric layer 320 of 330 top of the top of substrate layer 330 and substrate layer,
310B.Thermoelectric element 310A, 310B can be arranged array, while replace material in adjacent thermoelectric element 310A and 310B
The type (for example, between N-shaped and p-type) of material.Multiple thermoelectric element 310A, 310B can be connected in series via interconnection 350.Heat
Contact layer 340 can be provided on thermoelectric element 310A, 310B with the heat for being applied to thermoelectric power collector 300 that dissipates.
Thermoelectric energy collector 300 may include the additional substrate layer 370 between thermal contact layer 340 and dielectric layer 320.Substrate
Layer 370 can have high thermal conductivity to radiate from external heat source.Substrate layer 370 can be aluminium nitride substrate.
Thermoelectric energy collector 300 may include the one or more in substrate 330 and/or on the surface of substrate 330
Circuit element 380.Circuit element 380 can couple the output end of thermoelectric energy collector 300.Circuit block 380 can receive by
Energy caused by thermoelectric energy collector 300 and/or control thermoelectric energy collector 300.Circuit element 380 can be by heat
A part for the sensor that electric flux collector 300 is powered is (for example, automobile sensor, medical implant and/or wireless sensing
Device).In one embodiment, electric current can be provided to the thermoelectric element of thermoelectric power collector 300 via the circuit element 380
310A, 310B, for use as cooler.The circuit element in substrate 330 can be cooled down by serving as the thermoelectric energy collector 300 of cooler
380 or be positioned proximate to or on the surface of the substrate on.Charge carrier can be generated by being applied to the electric current of thermoelectric element 310A, 310B
Flowing can generate the temperature difference between 300 both sides of stream thermoelectric energy collector, can be used for cooling circuit element 380.
Barrier metal 360 may include thermoelectric element 310A, 310B and interconnection 350 between, be isolated thermoelectric element 310A,
The semi-conducting material of 310B and metal interconnection 350, while keeping the electrical connection between thermoelectric element 310A, 310B and interconnection 350.
Fig. 4 shows the exemplary configuration of the thermoelectric power collector 400 with closure construction in accordance with an embodiment of the present disclosure.Heat
Electric flux collector 400 may include capping substrate 470 to be enclosed in thermoelectric element 410A, 410B that 430 top of substrate provides.Add
Cap substrate 470 allows low pressure or vacuum, to be maintained at substrate 430 and cap between substrate 470.
Described thermoelectric element 410A, 410B capped between substrate 470 and substrate 410 can be surrounded by capping substrate 470.It caps
Substrate 470 can be attached to substrate 410 under pressure or vacuum so that low pressure or vacuum setting surrounds thermoelectric element 410A, 410B.
The parasitic heat waste of the peripheral regions thermoelectric element 410A, 410B can be reduced by capping substrate 470 and/or low pressure or vacuum
It loses.Reducing parasitic heat loss makes thermoelectric energy collect 400 and can be scaled down, and includes one as integrated circuit
Point.Reducing parasitic heat loss in small rank makes other circuits be included with thermoelectric power collector 400.
Capping substrate 470 can allow more energy to be collected by the thermoelectric energy collector 400.Vacuum is low
Pressure harvest allows the temperature gradient between the hot and cold side of thermoelectric element 410A, 410B to be maximized.
Similar to embodiment shown in Fig. 1-3, thermoelectric element 410A, 410B can be arranged array, have in phase
Alternate material type (for example, between N-shaped and p-type) in adjacent thermoelectric element 410A and 410B.Multiple thermoelectric element 410A,
410B can be connected in series with via interconnection 450.Thermal contact layer 440 can be provided on thermoelectric element 410A, 410B with the heat that dissipates
The heat of electric device 410A, 410B.
Barrier metal 460 may include between thermoelectric element 410A, 410B and interconnection 450, thermoelectricity is isolated from interconnection 450
The material of element 410A, 410B, while keeping the electrical connection between thermoelectric element 410A, 410B and interconnection 450.
In one embodiment, before it will cap the engagement to substrate 430 of substrate 470, p-type and N-shaped can all be set
On one capped in substrate 470 and substrate 430.In another embodiment, the engagement of substrate 470 will capped to base
Before plate 430, p-type thermoelectric element can be arranged on one capped in substrate 470 and substrate 430 and N-shaped heat
Electric device can be arranged on another for capping substrate 470 and substrate 430.The engagement of substrate 470 will be capped and arrive substrate 430
It will coupling p-type thermoelectric element and N-shaped thermoelectric element.
As shown in Figs 1-4, thermoelectric element is shown as the vertical structure with rectangle.However, thermoelectric element may include
Various shapes and orientations.Thermoelectric energy shown in Fig. 5 collects 500 exemplary configuration according to another embodiment of the present invention.Heat
Electric flux collector 500 may include multiple thermoelectric element 510A, the thermoelectricity member of 530 top of 510B substrate layers and substrate layer 530
In dielectric layer 520 above part 510A, 510B can be arranged array, while the type of alternative materials is (for example, N-shaped and p-type
Between), in adjacent thermoelectric element 510A and 510B.The multiple thermoelectric element 510A, 510B can be connected in series, via
Interconnection can be provided a thermo-contact for 550 layer 540 by above-mentioned thermoelectric element 510A, and 510B dissipations are applied to thermoelectric power collector 500
Heat.
As shown in figure 5, thermoelectric element 510A and 510B can be inclined.In addition, thermoelectric element 510A and 510B can be wrapped
Include being connected to 550. dielectric layer 520 of interconnection both ends and can permitting for one on interconnecting piece 510C or thermoelectric element 510A and 510B
Perhaps thermoelectric element 510A and 510B includes variously-shaped and direction.The direction of thermoelectric element 510A and 510B and/or shape, can be with
Change based on free space for thermoelectric power collector 500 and/or the performance requirement of system.Change the orientation of thermoelectric element 510A
Available space (for example, vertical space) may be reduced with 510B, while improving the table of thermoelectric element 510A to the maximum extent
Area and 510B are to be adjacent to dielectric layer 520.
Fig. 6 A show that thermoelectric energy collects 600 exemplary configuration according to the ... of the embodiment of the present invention.Thermoelectric energy is collected
Device 600 may include multiple thermoelectric element 610A, 610B of 630 top of substrate layer.Thermoelectric element 610A, 610B may include difference
The element of the thermoelectric material (for example, p-type and N-shaped) of type.Thermoelectric element 610A, 610B can be connected with each other so that response the
Temperature gradient between side (for example, hot side) and the second side (for example, cold side), each thermoelectric element contribute to by thermoelectric energy
The gross energy that collector 600 provides.Capping substrate 640 can be arranged above thermoelectric element 610A, 610B, to support described
Temperature gradient between side and the second side.It is described cap substrate 640 can by be made of good thermal conductor material.
Dummy structures 670 can surround thermoelectric element 610A, 610B and provide, to form thermoelectric element in the horizontal direction
Sealing element around 610A, 610B.Vacuum or low pressure can keep between thermoelectric element and/or within sealing.Dummy structures 670
It can be the form of ring, and shape can be carried out using some same steps for the manufacturing process for being used to form active thermoelectric element
At.Sealing element can be used for preventing in the fabrication process pollutant enter active thermoelectric element.In addition, dummy structures 670
Heat transfer can be reduced, to reduce thermal loss in the horizontal direction.
As shown in Figure 6A, thermoelectric power collector 600 can respectively in two substrates of different 630 and 640 with thermoelectric element
610A, 610B are formed.Herein for example, substrate 640, which can be formed as N-type element and substrate 630, can be formed as p-type element.
Dummy structures 670 can also be formed on one of substrate 630 and 640.Dummy structures 670 can be from N-shaped thermoelectric material or p-type warm
Electric material is made, but inactive state can also be in by disconnecting dummy structures 670.In doing so, dummy structures 670
It is formed as being used to form a part for the manufacturing process of thermoelectric element 610A and 610B using same steps, without additional
The step of.
In one embodiment, dummy structures 670 can be made of polyimide material, because it has low thermal conductivity
And contribute to processing to thermoelectric element.
In the fabrication process, the cutting of scribing line/recess 690 can be had or etch into substrate 640 by capping substrate, to define list
The profile of only integrated circuit die.The substrate 640 that caps can be inverted, and be aligned and installed and (interconnected by metal) substrate
630, so that thermoelectric element 610A and 610B are connected to various interconnection 650, to form alternate thermoelectricity in circuit paths
The character string of element 610A and 610B.In addition, dummy structures 670 can also be attached between substrate 630 and 640, it is close to be formed
Envelope.In the installation procedure, can between thermoelectric element 610A and 610B and dummy structures 670 sealing element inside carry out shape
At vacuum or low pressure.Capping substrate 640 can need to be ground as thin layer (arriving predetermined polish line 695).This may make described add
Cap substrate 640 is thinning and therefore more heat transfer, and also exposes scribing line/recess 690.
Because scribing line/recess 690 can be exposed, if without the sealing element of dummy structures 670, pollutant and particle can
To be introduced between thermoelectric element 610A and 610B in polishing step.Therefore, which contributes to form vacuum or low
Pressure, and prevent pollution in the fabrication process.
The wafer scale structure 600 of thermoelectric power collector allow it or close to substrate 630 and 640 with other integrated circuits
Component (being not shown in Fig. 6 A) is integrated.
Fig. 6 B and 6C further show to be formed by collector 600.Fig. 6 B for example show installing two 630 Hes of substrate
Collector 600 after 640 and after the completion of the polishing step through overexposure scribing line/notch 690.Fig. 6 C show collector
The annular seal of thermoelectric element 610A and 610B around 600 general vertical view and dummy structures 670.
As shown, thermoelectric element 610A, 610B may include different types of thermoelectric material (for example, p-type and N-shaped).
In response to the temperature difference between two ends, the thermoelectric material of thermoelectric element 610A, 610B can be selected as generating from thermoelectricity
Flowing of the one end of element to the charge carrier of the opposed polarity of opposite end.In the thermoelectric element 610A including p-type material, just
Charge carrier flow to opposite cold end from hot junction.In contrast, in the thermoelectric element 610B including n-type material, electronics is from tool
There is one end of heat source to flow to colder opposite end.
Multiple thermoelectric element 610A, 610B can be connected in an array, and be handed in adjacent thermoelectric element 610A and 610B
For the type (for example, between N-shaped and p-type) of material.In this way, across the voltage of thermoelectric element 610A and 610B exploitation
And/or electric current can be summed together to generate the aggregation voltage for being more than the bigger that thermoelectric element 610A and 610B are carried out respectively
And/or electric current.For example, the thermoelectric element 610A with p-type material can be connected in series with the thermoelectric element 610B with n-type material.
Thermoelectric element 610A, 610B can be arranged so that all adjacent thermoelectric elements of given thermoelectric element include being different from giving
The material type of the material of thermoelectric element.The output of the array of thermoelectric element 610A and 610B can be connected in parallel, to be answered specific
With the energy needed for middle offer.Interconnection 650 can connect thermoelectric element 610A and 610B to adjacent thermoelectric element 610A with
610B, and pad 680 can be connected further to (it can be used to be joined to external connection).
Although each thermoelectric element 610A, 610B can provide a small amount of energy (for example, millivolt), in an array connection heat
Electric device 610A, 610B can provide the higher-energy needed for specific application.When heat is applied on the side of thermoelectric power collector 600
When, there is the electronics in the thermoelectric element 610A of p-type material will flow to hot side from the low temperature side of thermoelectric element 610A, and there is n
Electronics in the thermoelectric element 610B of proximate matter material will flow to the cold side of thermoelectric element 610B from hot side.Therefore, if thermoelectric element
610A is connected in series thermoelectric element 610B, forms thermocouple, and electronics will flow to the heat of p-type material from the cold side of p-type material
Side enters the hot side of n-type material via interconnection 650, and enters the cold side of n-type material.In each thermoelectric element 610A, 610B institute
The energy of generation is combined, and is provided in the output end of thermoelectric power collector 600.
Fig. 6 A are the rough sizes for being not drawn to scale, but describing collector 600 in one embodiment.Thermoelectric element
610A, 610B can have the shape for the length for maximizing thermoelectric element 610A, 610B.Thermoelectric element 610A, 610B can have
Rectangular shape, side have in vertical direction than the short side longer length adjacent to interconnection 650.In another embodiment
In, at least one side of thermoelectric element 610A, 610B can be squares.In addition, the size of dummy structures 670 can make
The integral level area of the sealing formed by dummy structures 670 relative to use sealing element seal all thermoelectric element 610A,
The transverse area of 610B minimizes.This can help to collector 600 and minimizes the heat transfer for passing through dummy structures 670, and also most
Smallization heat loss in the horizontal direction.
For example, thermoelectric element 610A can be p-type BixSb2-xTe3 and thermoelectric element 610B can be N-shaped
Bi2Te3-xSex.Capping substrate 640 can be formed by semiconductor chip (such as N-shaped chip), and can be heat-conducting layer.?
In one embodiment, capping substrate 640 can be made of multilayer.For example, sealing end substrate 640 may include that thin non-conductive layer is (all
Such as, oxide or nitride) and the thicker metal layer in one or more of tops to improve heat transfer.Covering substrate 640 can be with
The insulation to interconnection layers 650 is provided at interface, to prevent the electric short circuit of interconnection layers 650.Substrate 630 can be had enough
Any semiconductor substrate of thickness, to promote heat transfer in bottom side.Although showing that substrate 630 is used as cold side and top closure substrate
640 configuration as hot side, the device are also used as substrate 630 and are used as cold side as hot side and top closure substrate 640.
The interconnection 650 can be included in the hot and cold sides of thermoelectric element, to connect adjacent thermoelectric element.Thermoelectricity
Element may include being coupled to the first interconnection of the first thermoelectric element in hot side and be connected to the second of the second thermoelectric element in cold side
Interconnection.Other circuit elements can be attached to (for example, outer in the interconnection 650 of first and last thermoelectric element 610A, 610B
Portion's circuit, load or energy accumulating device) leading-out terminal.Interconnection 650 may include semi-conducting material or metal connector (example
Such as, gold, copper or aluminium).
Dummy structures 670 can be in four skirts around thermoelectric element 610A, 610B, with thermal shunt thermoelectric element 610A, 610B
And thermal gradient is allowed to be developed in thermoelectric element 610A, 610B, and most of heats is allowed to advance to thermoelectric energy collector
600 side.Compared with the thermal resistance of substrate 630 and/or capping substrate 640, thermoelectric element 610A, 610B higher thermal hinders so that heat
Gradient crosses over thermoelectric element, rather than thermal contact layer or substrate 630.Therefore, maximum temperature difference be maintained at thermoelectric element 610A,
Between the hot and cold sides of 610B.
Although the sealing element of dummy structures 670 can be physically continuous loop, without any opening, to maintain wherein
Vacuum (or individual gas), if vacuum therein (or individual gas) is unwanted, dummy structures 670 can
With with the opening in horizontal direction.
Barrier metal 660 may include between thermoelectric element 610A, 610B and interconnection 650, to be isolated from metal interconnection 650
The semi-conducting material of thermoelectric element 610A, 610B, while keeping the electrical connection between thermoelectric element 610A, 610B and interconnection 650.
Barrier metal 660 can be by including to prevent the interconnection 650 to be diffused into the semi-conducting material of thermoelectric element 610A, 610B.
When heat is applied to side (for example, hot side) of thermoelectric power collector 600, electronics is with p-type material 610A's
It flows in thermoelectric element, and is flowed in another direction in the thermoelectric element 610B with n-type material in one direction.Cause
It is connected in series with for thermoelectric element 610A, 610B, each thermoelectric element 610A, 610B are in the defeated of the thermoelectric power collector 600
Go out to provide combined energy.Incoming heat is distributed to the hot side of thermoelectric element 610A, 610B by the capping substrate 640, and
Substrate 630 cools down the cold side of thermoelectric element 610A, 610B.
Fig. 7 A-7C show the exemplary configuration of thermoelectric energy collector 700 according to another embodiment of the present invention.
Thermoelectric energy collector 700 may include substrate 730 and cover substrate 740 between multiple thermoelectric element 710A,
710B.Thermoelectric element 710A710B may include the alternate element (for example, p-type and N-shaped) of different types of thermoelectric material.Thermoelectricity
Element 710A, 710B can be electrically connected so that in response to the temperature between the first side (for example, hot side) and the second side (such as cold side)
Gradient, each thermoelectric element contribute to the gross energy provided by the thermoelectric energy collector 700.
As shown in fig. 7, thermoelectric element 710A, 710B can have the height of at least described thermoelectric element 710A, 710B
Running length.In one embodiment, thermoelectric element 710A, 710B can be inclined.Tilt thermoelectric element 710A, 710B
It can have a rectangular or cylindrical shape shape.In another embodiment, thermoelectric element 710A, 710B can have cone shape or
Pyramidal shape.In one embodiment, in every a line of thermoelectric element, thermoelectric element 710A can be inclined in one direction,
And thermoelectric element 710B can be tilted in the opposite direction.
The variously-shaped permission thermoelectric power collector 700 of thermoelectric element 710A, 710B have half vertical or accurate lateral knot
Structure.These shapes of thermoelectric element 710A, 710B allow the thickness of thermoelectric power collector 700 to hang down relative to shown in Fig. 1
Directly-heated electric device reduces.The shape and depth of thermoelectric element 710A, 710B can be chosen so as to maximize the thermoelectric element
Surface area, while the thickness of thermoelectric power collector 700 being kept to fix.
Thermoelectric element 710A and 710B can be formed on the thermoplastic materials 720 (for example, polyimides) with lower thermal conductivity.
Thermoplastic materials 720 can provide the support for thermoelectric element 710A and 710B.The support of thermoelectric element 710A and 710B may be provided at
On the inclined surface of thermoplastic materials 720.Thermoplastic materials 720 allows the shape and orientation that thermoelectric element 710A and 710B include different.
The direction of thermoelectric element 710A and 710B and/or shape can be based on thermoelectric power collector 700 free space and/or system property
It can require to change.The orientation and/or shape for changing thermoelectric element 710A and 710B can reduce vertical space, while to greatest extent
Improve the surface area of thermoelectric element 710A and 710B and hot length in ground.
Space 790 between thermoelectric element 710A and 710B and the second heat conductor 730 can be filled (for example, setting
There is a vacuum).In one embodiment, the space 790 between thermoelectric element 710A and 710B and the capping substrate 740 can be filled out
Filled with air or gas.In another embodiment, the space between thermoelectric element 710A and 710B and the capping substrate 740
790 can be with filling dielectric or polyimides.
Thermoelectric element 710A and 710B can be on the one or both ends of thermoelectric element 710A and 710B for being connected to interconnection 750
Including interconnecting piece 710C.Interconnection 750, can be copper or gold, can be deposited on the surface of substrate 730 and 740.In a reality
(not shown) in example is applied, thermoelectric element 710A can be directly connected by interconnection 750 with via interconnecting piece 710C with 710B.Interconnection
750 can connect thermoelectric element 710A and 710B and adjacent thermoelectric element 710A and 710B, and can be connected further to logical
Hole and pad 780 (it can be used for being joined to external connection).
Additional interconnection 750 can be arranged by capping substrate 740, for connecting and integrated collector 700.Thermoelectric power collector
700 wafer scale structure allows it to be integrated with other integrated circuit components (not shown) to be formed as thermoelectric power collector 700
A part or near.
Dummy structures 770 are formed on thermoplasticity 720A, thermoelectric element 710A, 710B can be surrounded, in the horizontal direction
The upper sealing element formed around described thermoelectric element 710A, 710B.Vacuum or low pressure can keep between thermoelectric element and/or within
Sealing.Dummy structures 770 and 720A can be the forms of ring, and can be used to form active thermoelectric element using some
Manufacturing process identical step formed.Sealing element can also use, to prevent pollutant from having entered in the fabrication process
Source thermoelectric element.In addition, dummy structures 770 and 720A can reduce heat transfer, to reduce heat damage in the horizontal direction
It loses.
Dummy structures 770 can be formed on thermoplastic materials 720A by N-shaped thermoelectric material or p-type thermoelectric material, but can be with
Become inactive by disconnecting dummy structures 770.In doing so, identical using thermoelectric element 710A and 710B is used to form
Step, dummy structures 770 and 720A can be formed a part for manufacturing process, without additional step.
There is no dummy structures 770 and the sealing of 720A, pollutant and particle that can be introduced in thermoelectricity during polishing step
Between element 710A and 710B.Therefore, the dummy structures 770 and 720A contribute to form vacuum or low pressure, and prevent from making
Pollution during making.
Fig. 7 B show the different editions of collector 700.Interconnection 750 can be directly connected to pad 780 (without using any additional
Metal layer and interconnection).This further reduces step numbers in the fabrication process.Here dummy structures 770 further subtract
Few horizontal zone, so that their electrically isolated metal interconnection on the bottom side of thermoplastic materials 720A.
Fig. 7 C show the collector 700 of the annular seal with dummy structures 770 around thermoelectric element 710A and 710B
General vertical view.770 (not shown) of dummy structures is formed on the ring of thermoplastic materials 720A, formed around thermoelectric element 710A and
The sealing of 710B.Thermoelectric element 710A and 710B are respectively formed on thermoplastic materials 720, such as are shown as " island " on the inside of ring.?
This, thermoplastic materials " island " 720 is shown as independently of thermoplastic materials ring 720A.However, thermoplastic materials 720 and 720A can be physically attached to grid
In configuration.
Fig. 8 shows the exemplary configuration of thermoelectric power collector 800 according to another embodiment of the present invention.
Thermoelectric energy collector 800 may include that being formed in thermoplastic materials island 820 (is similar to thermoplastic in Fig. 7 A-7C
720) multiple thermoelectric element 810A, 810B on, and pass through 850 electrical connection of metal interconnection.Thermoelectric element 810A, 810B can be with
Include the alternate element of different types of thermoelectric material (for example, p-type and N-shaped).Thermoelectric element 810A, 810B can mutually be electrically connected
Connect so that in response to the first side (for example, hot side) between the second side (such as cold side) temperature gradient, each thermoelectric element has
The gross energy provided by the thermoelectric energy collector 800 is provided.
As shown in figure 8, thermoelectric element 810A, 810B can have the fortune of at least height of thermoelectric element 810A, 810B
Row length.In one embodiment, thermoelectric element 810A, 810B can simultaneously be both horizontally and vertically it is inclined or
Oblique.Inclined thermoelectric element 810A, 810B can have a rectangular or cylindrical shape shape.In another embodiment, thermoelectricity member
Part 810A, 810B can have a conical or pyramidal shape.In one embodiment, in every a line of thermoelectric element, heat
Electric device 810A can be inclined in one direction, and it can be inclined (horizontal and vertical in the opposite direction to state thermoelectric element 810B
Histogram to), have zigzag pattern.
The variously-shaped permission thermoelectric collector 800 of thermoelectric element 810A, 810B have half vertical or accurate lateral structure.
These shapes of thermoelectric element 810A, 810B allow the thickness of thermoelectric collector 800 to subtract compared to thermoelectric element shown in FIG. 1
It is few.The shape and depth of thermoelectric element 810A, 810B can be chosen so as to maximize the surface region of thermoelectric element, and keep thermoelectricity
The thickness of collector 800 is fixed.
Therefore, the same overall dimensions of thermoelectric collector 800 are provided, thermoelectric element 810A and 810B can be with horizontal tilts and perpendicular
It is straight to tilt, i.e., it is tilted in two dimensions relative to the thermal gradient direction of entire integrated circuit, to maximize by each active
The hot length (the flowable length of heat) of thermoelectric element.
Fig. 9 A show the exemplary configuration of thermoelectric energy collector 900 according to the ... of the embodiment of the present invention.Thermoelectric energy is collected
Device 900 may include multiple thermoelectric element 910A on substrate layer 930.Thermoelectric element 910A in series may include identical
The element of the thermoelectric material (for example, only p-type or only N-shaped) of type.Thermoelectric element 910A can be connected with each other so that in response to
Temperature gradient between side (for example, hot side) and the second side (for example, cold side), each thermoelectric element contribute to thermoelectric power to collect
The gross energy that device 900 is provided.Thermal contact layer 940 can be provided, to support between first side and the second side
Temperature gradient.Thermal contact layer 940 can by be made of good thermal conductor or can with one layer of good thermal conductor material.
As shown in Figure 9 A, thermoelectric power collector 900 may include vertical structure, and can be formed as single-chip.Thermoelectricity
The wafer level structure of collection of energy 900 allow it with substrate 930 on or other neighbouring integrated circuit components (Fig. 9 A are not shown)
It is integrated.
As indicated, the thermoelectric element 910A in series may include the thermoelectric material of same type (for example, only p-type or only n
Type) element.In response to the temperature difference between described two ends, the thermoelectric material of thermoelectric element 910A can be selected as producing
Flowing of the charge carrier of raw opposed polarity from one end of thermoelectric element to opposite end.In the thermoelectric element including p-type material
In 910A, positive charge carrier flow to opposite cold end from hot junction.
Multiple thermoelectric element 910A can be by connecting the opposite polar end of adjacent thermoelectric element 910A (that is, one
The top of a thermoelectric element 910A is connected to the bottom end of adjacent thermoelectric element 910A) it is connected array composition.With this side
Formula, the voltage and or current across thermoelectric element 910A exploitations can be summed together, and be more than thermoelectric element 910A mono- to generate
The bigger aggregation voltage and or current solely carried out.The array output of thermoelectric element 910A can be connected in parallel, to be carried in specific application
For required energy.Thermoelectric element 910A can be connected to adjacent thermoelectric element 910A by interconnection 950 and 970.Each series
The thermoelectric material (for example, only p-type or only N-shaped) of homotype can be only included.But the different series of different types of thermoelectric material
(for example, p-type series and N-shaped series) can integrate.
Although each thermoelectric element 910A can provide a small amount of energy (for example, millivolt), connection thermoelectric element 910A's
Array can provide higher energy to required specific application.It is applied on the side of the thermoelectric power collector 900, has when hot
There is the electronics of the thermoelectric element 910A of p-type material to flow to the hot side of thermoelectric element 910A from cold side.It is produced in each thermoelectric element 910A
Raw energy is merged, and is provided in the output end of thermoelectric power collector 900.
Fig. 9 B show the circuit for being equivalent to thermoelectric power collector 900 shown in Fig. 9 A.It is developed across thermoelectric element 910A
Voltage by Vp indicate (for p-type thermoelectric element 910A).Each voltage and or current can be added together to provide polymerization
Output voltage Vout, and in the case of drainage, voltage is added, and conventional low power electronics circuit can be driven to obtain
Useful voltage.
Fig. 9 A are not drawn to scale, but describe the rough size of collector 900 in one embodiment.Thermoelectric element 910A
Can have various sizes and shape.
Thermoelectric element 910A can be pure p-type BixSb2-xTe3 or can be pure N-shaped Bi2Te3-
xSex.Thermal contact layer 940 can be any electrical isolation but the layer of heat conduction.In one embodiment, thermal contact layer 940 can be by more
Layer composition.For example, the thermal contact layer 940 may include thin non-conductive layer, such as oxide or nitride and one or more of tops
The thicker metal layer in end, to improve heat transfer.Thermal contact layer 940 can provide the insulation to interconnection layers 950 in interface, with
Prevent the electric short circuit of interconnection layers 950.Substrate 930 can be any semiconductor substrate for having adequate thickness, to promote in bottom side
Into heat transfer.Although substrate 930 is shown as cold side and top thermal contact layer 940 as the configuration of hot side, which may be used also
For use as substrate 930 cold side is used as hot side and top thermal contact layer 940.
Interconnection 950 can be included in the hot and cold sides of thermoelectric element, to connect adjacent thermoelectric element.Thermoelectric element
It may include being coupled to the first interconnection of the first thermoelectric element in hot side and be connected to the second interconnection of the second thermoelectric element in cold side.
Other circuit elements can be attached to (for example, external circuit, load in the interconnection 950 of first and last thermoelectric element 910A
Or energy storage devices) leading-out terminal.Interconnection 950 and 970 may include semi-conducting material or metal connector (for example, gold,
Copper or aluminium), or even organic electric conductor.Interconnection 970 can be with metal throuth hole.
Barrier metal 960 may include between thermoelectric element 910A and interconnection 950, with from 950 heat of dissociation of metal interconnecting piece
The semi-conducting material of electric device 910A, while keeping the electrical connection between thermoelectric element 910A and interconnection 950.Barrier metal 960
It can be by including to prevent interconnection 950 to be diffused into the semi-conducting material of thermoelectric element 910A.
Although the present invention has been described above with reference to specific embodiment, the present invention is not limited to above-described embodiment and
Concrete configuration shown in attached drawing.For example, some components shown can be combined with each other as one embodiment or a component
Several sub-components or any other known or available component, which can be divided into, to be added.It will be understood by those skilled in the art that
The present invention can be not depart from the embodied in other of spirit of that invention and inner characteristic.Therefore the present embodiment is in all respects all
It is exemplary and not restrictive consideration.The scope of the present invention is by appended claims rather than is referred to by the description of front
Go out, and therefore all changes in the meaning and equivalent scope of claim are intended to and are included therein.
Claims (21)
1. a kind of thermoelectric collector, including：
First substrate has multiple thermionic valves legs thereon；With
Second substrate has multiple installation regions and multiple grooves, and the multiple installation region passes through the corresponding of fusible material
Example is combined with the multiple thermionic valves leg, and the multiple groove is close to the multiple installation region and is configured as preventing easy
The flowing of the adjacent instances of melt material.
2. thermoelectric collector according to claim 1, wherein the multiple thermionic valves leg has columnar shape.
3. thermoelectric collector according to claim 1, wherein the multiple thermionic valves leg has cone shape.
4. thermoelectric collector according to claim 1, wherein the first thermionic valves leg in the multiple thermionic valves leg is by list
One thermoelectric material is formed.
5. thermoelectric collector according to claim 1, wherein the first thermionic valves leg in the multiple thermionic valves leg is by one
Different types of thermoelectric material is formed.
6. thermoelectric collector according to claim 1, wherein the first groove in the multiple groove is around corresponding peace
Fill region.
7. thermoelectric collector according to claim 1, wherein the first groove in the multiple groove is partially around phase
The installation region answered.
8. thermoelectric collector according to claim 1, wherein the second substrate is formed by heat conductor, electric insulation layer covering
The heat conductor, the multiple installation region are located on the electric insulation layer.
9. thermoelectric collector according to claim 1, wherein having on the first installation region of the multiple installation region
Wet material.
10. thermoelectric collector according to claim 9, wherein near first installation region in the multiple groove
Groove on have wet material.
11. thermoelectric collector according to claim 1, wherein
The multiple thermionic valves leg is more than first a thermionic valves legs, and the multiple installation region is more than first a installation regions, institute
It is more than first a grooves to state multiple grooves,
There are more than second a thermionic valves legs on the second substrate, and
Have more than second a installation regions and more than second a grooves, a installation region more than described second logical on the first substrate
The respective instance for crossing fusible material is combined with more than described second a thermionic valves legs, and a groove more than described second is close to more than described second
A installation region forms and is configured as preventing the flowing of the adjacent instances of fusible material.
12. a kind of thermoelectric collector, including：
First substrate；
Multiple thermoelectric elements on the first substrate；And
Second substrate has multiple installation regions and multiple grooves, and the multiple installation region passes through the corresponding of fusible material
Example is combined with the multiple thermoelectric element, and the multiple groove forms close to the multiple installation region and is configured as hindering
The only flowing of the adjacent instances of fusible material.
13. thermoelectric collector according to claim 12, wherein the multiple thermoelectric element has columnar shape.
14. thermoelectric collector according to claim 12, wherein the multiple thermoelectric element has cone shape.
15. thermoelectric collector according to claim 12, wherein the first thermoelectric element in the multiple thermoelectric element by
Single thermoelectric material is formed.
16. thermoelectric collector according to claim 12, wherein the first thermoelectric element in the multiple thermoelectric element by
There is a pair of of thermoelectric material of complementary Pyroelectric response to be formed for common thermal gradient.
17. a kind of thermoelectric collector, including：
First substrate,
Second substrate, multiple grooves with multiple installation regions and close to the installation region, and
Multiple thermoelectric elements between the first substrate and the second substrate, each in the multiple thermoelectric element
It is combined with corresponding installation region by the respective instance of fusible material, wherein the multiple groove is positioned to fusible material flowing
Obstacle.
18. thermoelectric collector according to claim 17, wherein the first groove in the multiple groove is around corresponding
Installation region.
19. thermoelectric collector according to claim 17, wherein first groove in the multiple groove partially around
Corresponding installation region.
20. thermoelectric collector according to claim 17, wherein in each installation region and the multiple groove at least
One adjacent.
21. thermoelectric collector according to claim 17, wherein the multiple thermoelectric element has inclined profile.
Applications Claiming Priority (3)
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| US14/274,590 US9748466B2 (en) | 2013-01-08 | 2014-05-09 | Wafer scale thermoelectric energy harvester |
| US14/274,590 | 2014-05-09 | ||
| CN201510229765.7A CN105098053B (en) | 2014-05-09 | 2015-05-08 | Wafer level thermoelectric energy collector |
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| CN110739227A (en) * | 2019-09-27 | 2020-01-31 | 浙江大学 | manufacturing method of three-dimensional heterogeneous radio frequency module based on three-dimensional heat dissipation structure |
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| GB2544787A (en) * | 2015-11-27 | 2017-05-31 | European Thermodynamics Ltd | Thermoelectric module |
| CN108886084A (en) * | 2016-03-31 | 2018-11-23 | 株式会社村田制作所 | The manufacturing method of thermo-electric conversion module and thermo-electric conversion module |
| DE102018130761A1 (en) * | 2018-12-04 | 2020-06-04 | Bayerische Motoren Werke Aktiengesellschaft | Thermoelectric conversion device and vehicle |
| CN109524534B (en) * | 2018-12-06 | 2022-07-29 | 南京邮电大学 | Double-layer MEMS thermopile structure |
| CN115359736B (en) * | 2022-09-23 | 2023-11-21 | 武汉天马微电子有限公司 | Display assembly and display device |
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Also Published As
| Publication number | Publication date |
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| DE102015107240A1 (en) | 2015-11-12 |
| DE102015107240B4 (en) | 2022-03-03 |
| CN105098053B (en) | 2018-10-26 |
| DE102015107240B8 (en) | 2022-05-19 |
| CN105098053A (en) | 2015-11-25 |
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