CN108803167A - Electrostatic discharge protection circuit, electrostatic protection module and liquid crystal display device - Google Patents

Electrostatic discharge protection circuit, electrostatic protection module and liquid crystal display device Download PDF

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Publication number
CN108803167A
CN108803167A CN201810542137.8A CN201810542137A CN108803167A CN 108803167 A CN108803167 A CN 108803167A CN 201810542137 A CN201810542137 A CN 201810542137A CN 108803167 A CN108803167 A CN 108803167A
Authority
CN
China
Prior art keywords
transistor
electrode line
electrostatic
protection circuit
discharge protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810542137.8A
Other languages
Chinese (zh)
Inventor
戴超
陈旭
赵文达
王志军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing CEC Panda LCD Technology Co Ltd
Original Assignee
Nanjing CEC Panda LCD Technology Co Ltd
Nanjing Huadong Electronics Information and Technology Co Ltd
Nanjing CEC Panda FPD Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing CEC Panda LCD Technology Co Ltd, Nanjing Huadong Electronics Information and Technology Co Ltd, Nanjing CEC Panda FPD Technology Co Ltd filed Critical Nanjing CEC Panda LCD Technology Co Ltd
Priority to CN201810542137.8A priority Critical patent/CN108803167A/en
Publication of CN108803167A publication Critical patent/CN108803167A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136204Arrangements to prevent high voltage or static electricity failures
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/22Antistatic materials or arrangements

Abstract

The invention discloses a kind of electrostatic discharge protection circuit, including N number of transistor, N number of transistor, which sequentially connects, to be arranged between first electrode line and second electrode line;N-th (1<n<N) source level of transistor connects the grid of the (n-1)th transistor, and the grid of n-th of transistor connects the drain electrode of the (n-1)th transistor, the grid of drain electrode the (n+1)th transistor of connection of n-th of transistor;Source level positioned at the transistor of chopped-off head connects first electrode line with grid;Drain and gate positioned at the transistor of trailing pole connects second electrode line;When first electrode line accumulates electrostatic charge, the electrostatic charge on first electrode line is discharged from chopped-off head transistor to the path of tail grade transistor to second electrode line;When second electrode line accumulates electrostatic charge, the electrostatic charge on second electrode line is discharged from tail grade transistor to the path of chopped-off head transistor to first electrode line.The present invention enhances the protective capacities of electrostatic discharge protection circuit, effectively reduces the fuel factor in circuit, prevents circuit device from generating thermal breakdown.

Description

Electrostatic discharge protection circuit, electrostatic protection module and liquid crystal display device
Technical field
The present invention relates to a kind of field of liquid crystal display more particularly to electrostatic discharge protection circuit, electrostatic protection module and liquid crystal Display device.
Background technology
Display pannel durings manufacturing, transport use etc., can because various reason to generate electrostatic tired Product phenomenon, when buildup of static electricity can discharge on panel to a certain extent, if the Electro-static Driven Comb meeting without any safeguard procedures Display panel is wounded, causes Display panel bad;And electrostatic protection is exactly to evade Electro-static Driven Comb using some special designs The damage brought, common panel electrostatic protection method have:1. sharing charge by circuit design, charge accumulated is avoided;2. setting Electro-static Driven Comb point is counted, electrostatic is made to be discharged at insignificant position;3. external circuit design, mainly prevent exterior static introduce and into Row internal electrostatic is dredged.
3 kinds of Electrostatic Protection Designs for being used for display panel, prior art electrostatic as shown in Figure 1 are commonly used in mesh front panel design Transistor M1A and transistor M1B are carried out grid G and connect to form diode with source S, utilize two by sharing circuit schematic diagram Transistor unit carries out Electro-static Driven Comb, and the antistatic breakdown potential of the design is forced down and circuit leakage current is high.Fig. 2 is prior art floating boom Type electrostatic discharge protection circuit schematic diagram is to carry out the grid of transistor M1A vacantly, to utilize parasitic capacitance inductive coupling grid voltage Charge share, referred to as floating gate type are carried out, but the design easy tos produce charge residue in grid and charge release stability is poor.Figure 3 be prior art tip-type static release circuit schematic diagram, is the principle release electrostatic using point discharge, but the design exists Metal and insulating layer can be generally wounded after Electro-static Driven Comb, can only carry out an electrostatic protection.
Invention content
In order to solve the above technical problems, a kind of electrostatic discharge protection circuit of present invention offer, electrostatic protection module and liquid crystal Showing device enhances the protective capacities of electrostatic discharge protection circuit by multicomponent tandem.
Technical solution provided by the invention is as follows:
The invention discloses a kind of electrostatic discharge protection circuit, including N number of transistor, N is the integer more than 1;N number of transistor according to Sequence connection is arranged between first electrode line and second electrode line;N-th (1<n<N) source level of transistor connects the (n-1)th transistor Grid, the grid of n-th transistor connects the drain electrode of the (n-1)th transistor, and the drain electrode of n-th of transistor connects the (n+1)th crystal The grid of pipe;Source level positioned at the transistor of chopped-off head connects first electrode line with grid;Positioned at trailing pole transistor drain electrode and Grid connects second electrode line;When first electrode line accumulates electrostatic charge, the electrostatic charge on first electrode line is brilliant from chopped-off head The path of body pipe to tail grade transistor is discharged to second electrode line;When second electrode line accumulates electrostatic charge, second electrode line On electrostatic charge discharged to first electrode line from tail grade transistor to the path of chopped-off head transistor.
Further, without metal among the raceway groove of the transistor.
Further, one end of the raceway groove of the transistor is source electrode, and the other end of the raceway groove of the transistor is drain electrode, There is the protection insulating layer of covering raceway groove between source electrode and drain electrode between the source electrode and drain electrode
Further, the channel length of the transistor is more than viewing area pixel transistor channel length.
Further, the transistor is bottom grating structure.
Further, the transistor is 5.
The invention discloses a kind of electrostatic protection modules, including multiple electrostatic discharge protection circuits to be connected in series.
The invention discloses a kind of liquid crystal display device, including neighboring area and display area, neighboring area is equipped with described Electrostatic protection module, the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed.
Further, each electrostatic discharge protection circuit includes N number of transistor;Multiple pixel transistors are equipped in the display area Pipe, wherein the length of the raceway groove of each transistor of electrostatic discharge protection circuit is more than the length of the raceway groove of each pixel transistor.
Further, the length of the raceway groove of each transistor of electrostatic discharge protection circuit is the raceway groove of each pixel transistor Twice or more of length.
Compared with prior art, the present invention enhances the protection energy of electrostatic discharge protection circuit by way of multiple transistor series connections Power effectively reduces the fuel factor in circuit, prevents circuit device from generating thermal breakdown, and designed by long raceway groove and increase single transistor Impedance, improve the antistatic breakdown capability in electrostatic protection circuit.
Description of the drawings
Below by a manner of clearly understandable, preferred embodiment is described with reference to the drawings, the present invention is given furtherly It is bright.
Fig. 1 is prior art electrostatic sharing circuit schematic diagram;
Fig. 2 is prior art floating gate type electrostatic discharge protection circuit schematic diagram;
Fig. 3 is prior art tip-type static release circuit schematic diagram;
Fig. 4 is a kind of circuit diagram of electrostatic discharge protection circuit of the present invention;
Fig. 5 show a kind of channel cross-sections schematic diagram of electrostatic discharge protection circuit transistor of the present invention;
Fig. 6 is electrostatic discharge protection circuit schematic diagram in liquid crystal display device of the present invention.
Drawing reference numeral explanation:
M1, the first transistor, M2, second transistor, M3, third transistor, M4, the 4th transistor, M5, the 5th crystal Pipe, C1, first electrode line, C2, second electrode line.
Specific implementation mode
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, control is illustrated below The specific implementation mode of the present invention.It should be evident that drawings in the following description are only some embodiments of the invention, for For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings Attached drawing, and obtain other embodiments.
To make simplified form, part related to the present invention is only schematically shown in each figure, they are not represented Its practical structures as product.In addition, so that simplified form is easy to understand, there is identical structure or function in some figures Component only symbolically depicts one of those, or has only marked one of those.Herein, "one" is not only indicated " only this ", can also indicate the situation of " more than one ".
The invention discloses a kind of electrostatic discharge protection circuit, including N number of transistor, N is the integer more than 1;N number of transistor according to Sequence connection is arranged between first electrode line C1 and second electrode line C2;N-th (1<n<N) the source S connection (n-1)th of transistor is brilliant The grid G of body pipe, the grid G of n-th of transistor connect the drain D of the (n-1)th transistor;Positioned at the source S of the transistor of chopped-off head First electrode line C1 is connected with grid G;Drain D positioned at the transistor of trailing pole connects second electrode line C2 with grid G;When first When electrode wires C1 accumulation electrostatic charges, the electrostatic charge on first electrode line C1 is from chopped-off head transistor to the path of tail grade transistor It discharges to second electrode line C2;When second electrode line C2 accumulates electrostatic charge, electrostatic charge on second electrode line C2 is from tail The path of grade transistor to chopped-off head transistor is discharged to first electrode line C1.
Specifically, the number of N needs value according to actual circuit, it is not especially limited.It is preferable to use N=5 in the present invention I.e. five transistors are connected to form electrostatic discharge protection circuit, are connected between first electrode line C1 and second electrode line C2, For discharging the charge accumulated on first electrode line C1 or second electrode line C2.
It should be noted that heretofore described first electrode line C1 and second electrode line C2 and be not especially limited, it is any Accumulation has electrostatic charge to need the two lines road discharged all can be first electrode line C1 and second electrode line C2.
Fig. 4 is a kind of circuit diagram of electrostatic discharge protection circuit of the present invention, as shown in figure 4, being with N=5 in the present embodiment Example, electrostatic discharge protection circuit include sequentially concatenated the first transistor M1, second transistor M2, third transistor M3, the 4th crystal The grid G of pipe M4 and the 5th transistor M5, the first transistor M1 connect first electrode line C1, the first transistor M1 with source S Drain D connection second transistor M2 grid G;The source S of second transistor M2 is connect simultaneously with the grid G of the first transistor M1 Connect grid G and the drain D of the first transistor M1 and the source of third transistor M3 of first electrode line C1, second transistor M2 Pole S is connected, the grid G of the drain D connection third transistor M3 of second transistor M2, the drain D of third transistor M3 and the 4th The grid G of transistor M4 is connected;The source S of 4th transistor M4 and the drain D of second transistor M2 and third transistor M3 Grid G be connected, the drain D of the 4th transistor M4 is connected with the grid G of the 5th transistor M5;The source S of 5th transistor M5 It is connected with the grid G of the drain D of third transistor M3 and the 4th transistor M4, the drain D of the 5th transistor M5 is brilliant with the 4th The drain D of body pipe M4 is connected and is connected to second electrode line C2.
When stored charge on first electrode line C1, current potential can change the potential rise of namely source S and grid G Height can thus open the first transistor M1, and then charge is discharged to the grid G of second transistor M2, similarly, at this time second The grid G and source S current potential of transistor increase, and can thus open second transistor M2, and so on, M1/ is opened successively M2/M3/M4/M5, charge are discharged by five transistors to second electrode line C2.
When stored charge on second electrode line C2, current potential can change, and be exactly the current potential raising of drain D and grid G, The 5th transistor M5 can be thus opened, then charge is discharged to the grid G of the 4th transistor M4, and similarly, the 4th is brilliant at this time The grid G and drain D current potential of body pipe increase, and can thus open the 4th transistor M4, and so on, M5/M4/ is opened successively M3/M2/M1, charge are discharged by five transistors to second electrode line C2.
It connects to form electrostatic discharge protection circuit by five transistors, the charge of accumulation flows successively through
M1/M2/M3/M4/M5 (reversed when M5/M4/M3/M2/M1), compared with the prior art, since number of transistors increases Add, the resistance in circuit also accordingly increases, and the electric current in circuit is flowed through under identical voltage and can be reduced, the heat in circuit is thus effectively reduced Effect enhances the antistatic effect of circuit to prevent circuit device from generating thermal breakdown.
Above-described embodiment is improved, without metal, i.e., the described transistor among the raceway groove of heretofore described transistor One end of raceway groove be source electrode, the other end of the raceway groove of the transistor is drain electrode, has covering between the source electrode and drain electrode The protection insulating layer of raceway groove between source electrode and drain electrode, the in design only metal of source electrode and drain electrode, longer back of the body raceway groove Covering only protection insulating layer (not shown), does not include other metal patterns and designs.
It is a kind of diagrammatic cross-section of the transistor channel of electrostatic discharge protection circuit of the present invention shown in Fig. 5, as shown in figure 5, quiet The transistor of the back of the body channel-etch type of electric protection circuit, (value is only used for citing demonstration to channel length L=20um, does not limit It is fixed), by increasing transistor channel length to increase the impedance of single transistor, to improve the antistatic of electrostatic protection circuit Breakdown capability.
The invention discloses a kind of electrostatic protection modules of liquid crystal display device, including multiple electrostatic discharge protection circuit strings Join.
Invention additionally discloses a kind of liquid crystal display devices, include the electrostatic protection mould of multiple above-mentioned electrostatic discharge protection circuit compositions Block.Fig. 6 is electrostatic discharge protection circuit schematic diagram in liquid crystal display device of the present invention, as shown in fig. 6, a kind of liquid crystal display device includes Neighboring area and display area, it includes signal drive circuit, gate driving circuit and multiple electrostatic protections that neighboring area, which is equipped with, Circuit forms electrostatic protection module, and the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed, each electrostatic protection Circuit includes N number of transistor, which is connected with the circuit of the panel itself of liquid crystal display device;In display area Equipped with multiple pixel transistors, wherein the length of the raceway groove of each transistor of electrostatic discharge protection circuit is more than each pixel transistor The length of the raceway groove of pipe, such as the length of the raceway groove of pixel transistor are equal to 6um, then the raceway groove of the transistor of electrostatic discharge protection circuit Length can be set equal to 20um, the transistor of electrostatic discharge protection circuit is the transistor of no top gate structure, i.e. electrostatic discharge protection circuit Transistor be bottom grating structure.
In the prior art on a display panel, the channel length of pixel driven transistor is less than 10um, but the present invention's is quiet The channel length design of transistor is bigger than the channel length of the prior art in electricity protection circuit.
Electrostatic discharge protection circuit is applied in liquid crystal display device in the present invention, and a part of electrostatic discharge protection circuit is for discharging number According to the electrostatic charge between signal wire and public electrode wire, therefore first electrode line C1 is data signal line, second electrode line C2 For public electrode wire, and another part electrostatic discharge protection circuit is used to discharge the electrostatic electricity between gate line and public electrode wire Lotus, therefore first electrode line C1 finger grid signal wires, second electrode line C2 refer to public electrode wire.
It should be noted that above-described embodiment can be freely combined as needed.The above is only the preferred of the present invention Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention Under, several improvements and modifications can also be made, these improvements and modifications also should be regarded as protection scope of the present invention.

Claims (9)

1. a kind of electrostatic discharge protection circuit, which is characterized in that including N number of transistor, N is the integer more than 1;
N number of transistor, which sequentially connects, to be arranged between first electrode line and second electrode line;
N-th (1<n<N) source level of transistor connects the grid of the (n-1)th transistor, and the grid connection (n-1)th of n-th of transistor is brilliant The drain electrode of body pipe, the grid of drain electrode the (n+1)th transistor of connection of n-th of transistor;
Source level positioned at the transistor of chopped-off head connects first electrode line with grid;
Drain and gate positioned at the transistor of trailing pole connects second electrode line;
When first electrode line accumulates electrostatic charge, the electrostatic charge on first electrode line is from chopped-off head transistor to tail grade transistor Path discharge to second electrode line;
When second electrode line accumulates electrostatic charge, the electrostatic charge on second electrode line is from tail grade transistor to chopped-off head transistor Path discharge to first electrode line.
2. electrostatic discharge protection circuit as described in claim 1, which is characterized in that without metal among the raceway groove of the transistor.
3. electrostatic discharge protection circuit as described in claim 1, which is characterized in that one end of the raceway groove of the transistor is source electrode, The other end of the raceway groove of the transistor is drain electrode, has inter-drain of the covering positioned at source electrode and drain electrode between the source electrode and drain electrode The protection insulating layer in road.
4. electrostatic discharge protection circuit as described in claim 1, which is characterized in that the transistor is bottom grating structure.
5. electrostatic discharge protection circuit as described in claim 1, which is characterized in that the transistor is 5.
6. a kind of electrostatic protection module, which is characterized in that including multiple electrostatic protections electricity described in claim 1-5 any one Road is connected in series.
7. a kind of liquid crystal display device, including neighboring area and display area, which is characterized in that neighboring area is equipped with claim Electrostatic protection module described in 6, the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed.
8. liquid crystal display device as claimed in claim 7, which is characterized in that each electrostatic discharge protection circuit includes N number of transistor; Multiple pixel transistors are equipped in the display area, wherein the length of the raceway groove of each transistor of electrostatic discharge protection circuit is big In the length of the raceway groove of each pixel transistor.
9. liquid crystal display device as claimed in claim 8, which is characterized in that the raceway groove of each transistor of electrostatic discharge protection circuit Length be twice or more of length of raceway groove of each pixel transistor.
CN201810542137.8A 2018-05-30 2018-05-30 Electrostatic discharge protection circuit, electrostatic protection module and liquid crystal display device Pending CN108803167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
CN201810542137.8A CN108803167A (en) 2018-05-30 2018-05-30 Electrostatic discharge protection circuit, electrostatic protection module and liquid crystal display device

Publications (1)

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CN108803167A true CN108803167A (en) 2018-11-13

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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101419967A (en) * 2007-10-23 2009-04-29 乐金显示有限公司 Electrostatic discharge protection circuit, manufacturing method thereof and liquid crystal display device having the same
CN201349132Y (en) * 2008-12-19 2009-11-18 北京京东方光电科技有限公司 Electrostatic protection circuit and thin film transistor liquid crystal display panel using same
US20100202090A1 (en) * 2009-02-09 2010-08-12 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
CN202332851U (en) * 2011-11-22 2012-07-11 京东方科技集团股份有限公司 Static protection circuit, array substrate and liquid crystal display
CN103944154A (en) * 2013-12-11 2014-07-23 厦门天马微电子有限公司 Electrostatic protection circuit and liquid crystal displayer
CN104113053A (en) * 2014-04-21 2014-10-22 京东方科技集团股份有限公司 Electrostatic discharge protection circuit, display substrate and display device
CN105446040A (en) * 2016-01-05 2016-03-30 京东方科技集团股份有限公司 ESD (Electro-Static discharge) protective unit, array substrate, display panel and display device
CN105739206A (en) * 2016-02-18 2016-07-06 深圳市华星光电技术有限公司 Array substrate and liquid crystal display device
CN106876416A (en) * 2017-03-30 2017-06-20 合肥鑫晟光电科技有限公司 Static discharge unit, array base palte and display panel
CN107290908A (en) * 2017-06-23 2017-10-24 武汉华星光电技术有限公司 Electrostatic discharge protective circuit and liquid crystal display panel
CN107402464A (en) * 2017-07-21 2017-11-28 惠科股份有限公司 A kind of electrostatic discharge circuit and display panel

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101419967A (en) * 2007-10-23 2009-04-29 乐金显示有限公司 Electrostatic discharge protection circuit, manufacturing method thereof and liquid crystal display device having the same
CN201349132Y (en) * 2008-12-19 2009-11-18 北京京东方光电科技有限公司 Electrostatic protection circuit and thin film transistor liquid crystal display panel using same
US20100202090A1 (en) * 2009-02-09 2010-08-12 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
CN202332851U (en) * 2011-11-22 2012-07-11 京东方科技集团股份有限公司 Static protection circuit, array substrate and liquid crystal display
CN103944154A (en) * 2013-12-11 2014-07-23 厦门天马微电子有限公司 Electrostatic protection circuit and liquid crystal displayer
CN104113053A (en) * 2014-04-21 2014-10-22 京东方科技集团股份有限公司 Electrostatic discharge protection circuit, display substrate and display device
CN105446040A (en) * 2016-01-05 2016-03-30 京东方科技集团股份有限公司 ESD (Electro-Static discharge) protective unit, array substrate, display panel and display device
CN105739206A (en) * 2016-02-18 2016-07-06 深圳市华星光电技术有限公司 Array substrate and liquid crystal display device
CN106876416A (en) * 2017-03-30 2017-06-20 合肥鑫晟光电科技有限公司 Static discharge unit, array base palte and display panel
CN107290908A (en) * 2017-06-23 2017-10-24 武汉华星光电技术有限公司 Electrostatic discharge protective circuit and liquid crystal display panel
CN107402464A (en) * 2017-07-21 2017-11-28 惠科股份有限公司 A kind of electrostatic discharge circuit and display panel

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Effective date of registration: 20200827

Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province

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Address before: Nanjing Crystal Valley Road in Qixia District of Nanjing City Tianyou 210033 Jiangsu province No. 7

Applicant before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd.

Applicant before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd.

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Application publication date: 20181113

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