Electrostatic discharge protection circuit, electrostatic protection module and liquid crystal display device
Technical field
The present invention relates to a kind of field of liquid crystal display more particularly to electrostatic discharge protection circuit, electrostatic protection module and liquid crystal
Display device.
Background technology
Display pannel durings manufacturing, transport use etc., can because various reason to generate electrostatic tired
Product phenomenon, when buildup of static electricity can discharge on panel to a certain extent, if the Electro-static Driven Comb meeting without any safeguard procedures
Display panel is wounded, causes Display panel bad;And electrostatic protection is exactly to evade Electro-static Driven Comb using some special designs
The damage brought, common panel electrostatic protection method have:1. sharing charge by circuit design, charge accumulated is avoided;2. setting
Electro-static Driven Comb point is counted, electrostatic is made to be discharged at insignificant position;3. external circuit design, mainly prevent exterior static introduce and into
Row internal electrostatic is dredged.
3 kinds of Electrostatic Protection Designs for being used for display panel, prior art electrostatic as shown in Figure 1 are commonly used in mesh front panel design
Transistor M1A and transistor M1B are carried out grid G and connect to form diode with source S, utilize two by sharing circuit schematic diagram
Transistor unit carries out Electro-static Driven Comb, and the antistatic breakdown potential of the design is forced down and circuit leakage current is high.Fig. 2 is prior art floating boom
Type electrostatic discharge protection circuit schematic diagram is to carry out the grid of transistor M1A vacantly, to utilize parasitic capacitance inductive coupling grid voltage
Charge share, referred to as floating gate type are carried out, but the design easy tos produce charge residue in grid and charge release stability is poor.Figure
3 be prior art tip-type static release circuit schematic diagram, is the principle release electrostatic using point discharge, but the design exists
Metal and insulating layer can be generally wounded after Electro-static Driven Comb, can only carry out an electrostatic protection.
Invention content
In order to solve the above technical problems, a kind of electrostatic discharge protection circuit of present invention offer, electrostatic protection module and liquid crystal
Showing device enhances the protective capacities of electrostatic discharge protection circuit by multicomponent tandem.
Technical solution provided by the invention is as follows:
The invention discloses a kind of electrostatic discharge protection circuit, including N number of transistor, N is the integer more than 1;N number of transistor according to
Sequence connection is arranged between first electrode line and second electrode line;N-th (1<n<N) source level of transistor connects the (n-1)th transistor
Grid, the grid of n-th transistor connects the drain electrode of the (n-1)th transistor, and the drain electrode of n-th of transistor connects the (n+1)th crystal
The grid of pipe;Source level positioned at the transistor of chopped-off head connects first electrode line with grid;Positioned at trailing pole transistor drain electrode and
Grid connects second electrode line;When first electrode line accumulates electrostatic charge, the electrostatic charge on first electrode line is brilliant from chopped-off head
The path of body pipe to tail grade transistor is discharged to second electrode line;When second electrode line accumulates electrostatic charge, second electrode line
On electrostatic charge discharged to first electrode line from tail grade transistor to the path of chopped-off head transistor.
Further, without metal among the raceway groove of the transistor.
Further, one end of the raceway groove of the transistor is source electrode, and the other end of the raceway groove of the transistor is drain electrode,
There is the protection insulating layer of covering raceway groove between source electrode and drain electrode between the source electrode and drain electrode
Further, the channel length of the transistor is more than viewing area pixel transistor channel length.
Further, the transistor is bottom grating structure.
Further, the transistor is 5.
The invention discloses a kind of electrostatic protection modules, including multiple electrostatic discharge protection circuits to be connected in series.
The invention discloses a kind of liquid crystal display device, including neighboring area and display area, neighboring area is equipped with described
Electrostatic protection module, the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed.
Further, each electrostatic discharge protection circuit includes N number of transistor;Multiple pixel transistors are equipped in the display area
Pipe, wherein the length of the raceway groove of each transistor of electrostatic discharge protection circuit is more than the length of the raceway groove of each pixel transistor.
Further, the length of the raceway groove of each transistor of electrostatic discharge protection circuit is the raceway groove of each pixel transistor
Twice or more of length.
Compared with prior art, the present invention enhances the protection energy of electrostatic discharge protection circuit by way of multiple transistor series connections
Power effectively reduces the fuel factor in circuit, prevents circuit device from generating thermal breakdown, and designed by long raceway groove and increase single transistor
Impedance, improve the antistatic breakdown capability in electrostatic protection circuit.
Description of the drawings
Below by a manner of clearly understandable, preferred embodiment is described with reference to the drawings, the present invention is given furtherly
It is bright.
Fig. 1 is prior art electrostatic sharing circuit schematic diagram;
Fig. 2 is prior art floating gate type electrostatic discharge protection circuit schematic diagram;
Fig. 3 is prior art tip-type static release circuit schematic diagram;
Fig. 4 is a kind of circuit diagram of electrostatic discharge protection circuit of the present invention;
Fig. 5 show a kind of channel cross-sections schematic diagram of electrostatic discharge protection circuit transistor of the present invention;
Fig. 6 is electrostatic discharge protection circuit schematic diagram in liquid crystal display device of the present invention.
Drawing reference numeral explanation:
M1, the first transistor, M2, second transistor, M3, third transistor, M4, the 4th transistor, M5, the 5th crystal
Pipe, C1, first electrode line, C2, second electrode line.
Specific implementation mode
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, control is illustrated below
The specific implementation mode of the present invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing, and obtain other embodiments.
To make simplified form, part related to the present invention is only schematically shown in each figure, they are not represented
Its practical structures as product.In addition, so that simplified form is easy to understand, there is identical structure or function in some figures
Component only symbolically depicts one of those, or has only marked one of those.Herein, "one" is not only indicated
" only this ", can also indicate the situation of " more than one ".
The invention discloses a kind of electrostatic discharge protection circuit, including N number of transistor, N is the integer more than 1;N number of transistor according to
Sequence connection is arranged between first electrode line C1 and second electrode line C2;N-th (1<n<N) the source S connection (n-1)th of transistor is brilliant
The grid G of body pipe, the grid G of n-th of transistor connect the drain D of the (n-1)th transistor;Positioned at the source S of the transistor of chopped-off head
First electrode line C1 is connected with grid G;Drain D positioned at the transistor of trailing pole connects second electrode line C2 with grid G;When first
When electrode wires C1 accumulation electrostatic charges, the electrostatic charge on first electrode line C1 is from chopped-off head transistor to the path of tail grade transistor
It discharges to second electrode line C2;When second electrode line C2 accumulates electrostatic charge, electrostatic charge on second electrode line C2 is from tail
The path of grade transistor to chopped-off head transistor is discharged to first electrode line C1.
Specifically, the number of N needs value according to actual circuit, it is not especially limited.It is preferable to use N=5 in the present invention
I.e. five transistors are connected to form electrostatic discharge protection circuit, are connected between first electrode line C1 and second electrode line C2,
For discharging the charge accumulated on first electrode line C1 or second electrode line C2.
It should be noted that heretofore described first electrode line C1 and second electrode line C2 and be not especially limited, it is any
Accumulation has electrostatic charge to need the two lines road discharged all can be first electrode line C1 and second electrode line C2.
Fig. 4 is a kind of circuit diagram of electrostatic discharge protection circuit of the present invention, as shown in figure 4, being with N=5 in the present embodiment
Example, electrostatic discharge protection circuit include sequentially concatenated the first transistor M1, second transistor M2, third transistor M3, the 4th crystal
The grid G of pipe M4 and the 5th transistor M5, the first transistor M1 connect first electrode line C1, the first transistor M1 with source S
Drain D connection second transistor M2 grid G;The source S of second transistor M2 is connect simultaneously with the grid G of the first transistor M1
Connect grid G and the drain D of the first transistor M1 and the source of third transistor M3 of first electrode line C1, second transistor M2
Pole S is connected, the grid G of the drain D connection third transistor M3 of second transistor M2, the drain D of third transistor M3 and the 4th
The grid G of transistor M4 is connected;The source S of 4th transistor M4 and the drain D of second transistor M2 and third transistor M3
Grid G be connected, the drain D of the 4th transistor M4 is connected with the grid G of the 5th transistor M5;The source S of 5th transistor M5
It is connected with the grid G of the drain D of third transistor M3 and the 4th transistor M4, the drain D of the 5th transistor M5 is brilliant with the 4th
The drain D of body pipe M4 is connected and is connected to second electrode line C2.
When stored charge on first electrode line C1, current potential can change the potential rise of namely source S and grid G
Height can thus open the first transistor M1, and then charge is discharged to the grid G of second transistor M2, similarly, at this time second
The grid G and source S current potential of transistor increase, and can thus open second transistor M2, and so on, M1/ is opened successively
M2/M3/M4/M5, charge are discharged by five transistors to second electrode line C2.
When stored charge on second electrode line C2, current potential can change, and be exactly the current potential raising of drain D and grid G,
The 5th transistor M5 can be thus opened, then charge is discharged to the grid G of the 4th transistor M4, and similarly, the 4th is brilliant at this time
The grid G and drain D current potential of body pipe increase, and can thus open the 4th transistor M4, and so on, M5/M4/ is opened successively
M3/M2/M1, charge are discharged by five transistors to second electrode line C2.
It connects to form electrostatic discharge protection circuit by five transistors, the charge of accumulation flows successively through
M1/M2/M3/M4/M5 (reversed when M5/M4/M3/M2/M1), compared with the prior art, since number of transistors increases
Add, the resistance in circuit also accordingly increases, and the electric current in circuit is flowed through under identical voltage and can be reduced, the heat in circuit is thus effectively reduced
Effect enhances the antistatic effect of circuit to prevent circuit device from generating thermal breakdown.
Above-described embodiment is improved, without metal, i.e., the described transistor among the raceway groove of heretofore described transistor
One end of raceway groove be source electrode, the other end of the raceway groove of the transistor is drain electrode, has covering between the source electrode and drain electrode
The protection insulating layer of raceway groove between source electrode and drain electrode, the in design only metal of source electrode and drain electrode, longer back of the body raceway groove
Covering only protection insulating layer (not shown), does not include other metal patterns and designs.
It is a kind of diagrammatic cross-section of the transistor channel of electrostatic discharge protection circuit of the present invention shown in Fig. 5, as shown in figure 5, quiet
The transistor of the back of the body channel-etch type of electric protection circuit, (value is only used for citing demonstration to channel length L=20um, does not limit
It is fixed), by increasing transistor channel length to increase the impedance of single transistor, to improve the antistatic of electrostatic protection circuit
Breakdown capability.
The invention discloses a kind of electrostatic protection modules of liquid crystal display device, including multiple electrostatic discharge protection circuit strings
Join.
Invention additionally discloses a kind of liquid crystal display devices, include the electrostatic protection mould of multiple above-mentioned electrostatic discharge protection circuit compositions
Block.Fig. 6 is electrostatic discharge protection circuit schematic diagram in liquid crystal display device of the present invention, as shown in fig. 6, a kind of liquid crystal display device includes
Neighboring area and display area, it includes signal drive circuit, gate driving circuit and multiple electrostatic protections that neighboring area, which is equipped with,
Circuit forms electrostatic protection module, and the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed, each electrostatic protection
Circuit includes N number of transistor, which is connected with the circuit of the panel itself of liquid crystal display device;In display area
Equipped with multiple pixel transistors, wherein the length of the raceway groove of each transistor of electrostatic discharge protection circuit is more than each pixel transistor
The length of the raceway groove of pipe, such as the length of the raceway groove of pixel transistor are equal to 6um, then the raceway groove of the transistor of electrostatic discharge protection circuit
Length can be set equal to 20um, the transistor of electrostatic discharge protection circuit is the transistor of no top gate structure, i.e. electrostatic discharge protection circuit
Transistor be bottom grating structure.
In the prior art on a display panel, the channel length of pixel driven transistor is less than 10um, but the present invention's is quiet
The channel length design of transistor is bigger than the channel length of the prior art in electricity protection circuit.
Electrostatic discharge protection circuit is applied in liquid crystal display device in the present invention, and a part of electrostatic discharge protection circuit is for discharging number
According to the electrostatic charge between signal wire and public electrode wire, therefore first electrode line C1 is data signal line, second electrode line C2
For public electrode wire, and another part electrostatic discharge protection circuit is used to discharge the electrostatic electricity between gate line and public electrode wire
Lotus, therefore first electrode line C1 finger grid signal wires, second electrode line C2 refer to public electrode wire.
It should be noted that above-described embodiment can be freely combined as needed.The above is only the preferred of the present invention
Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these improvements and modifications also should be regarded as protection scope of the present invention.