CN108801970A - The detection method of support insulator boundary defect and interface state - Google Patents
The detection method of support insulator boundary defect and interface state Download PDFInfo
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- 230000007547 defect Effects 0.000 title claims abstract description 94
- 239000012212 insulator Substances 0.000 title claims abstract description 55
- 238000001514 detection method Methods 0.000 title claims abstract description 30
- 230000002950 deficient Effects 0.000 claims abstract description 44
- 229920002635 polyurethane Polymers 0.000 claims abstract description 18
- 239000004814 polyurethane Substances 0.000 claims abstract description 18
- 239000004593 Epoxy Substances 0.000 claims description 22
- 229920001971 elastomer Polymers 0.000 claims description 5
- 239000002131 composite material Substances 0.000 abstract description 10
- 238000011156 evaluation Methods 0.000 abstract description 8
- 230000010412 perfusion Effects 0.000 abstract description 7
- 229920002379 silicone rubber Polymers 0.000 description 10
- 238000004080 punching Methods 0.000 description 6
- 239000004945 silicone rubber Substances 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920005830 Polyurethane Foam Polymers 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 210000001367 artery Anatomy 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011496 polyurethane foam Substances 0.000 description 4
- 210000003462 vein Anatomy 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
Abstract
The detection method of a kind of support insulator boundary defect and interface state provided by the invention, several spatial points are chosen in support insulator main interface, the Terahertz reflection time domain waveform that THz wave obtains each spatial point in a reflective mode enabling is set, each spatial point is in the main interface, the second contact surface, first interface sequentially forms main pulse, first echo impulse and the second echo impulse, the Terahertz reflection time domain waveform and the Terahertz in non-defective region of more each spatial point reflect time domain waveform, when there is third echo impulse or the echo impulse energy becomes larger, Presence of an interface defect in detection plane where the corresponding spatial point.Check and evaluation method of the present invention is based on THz wave reflective-mode time-domain waveform analysis, and accuracy in detection is high, operability is strong, and feasibility is reliable, disclosure satisfy that the evaluation work requirement to Polyurethane Perfusion formula composite post insulator interface state.
Description
Technical field
The present invention relates to technical field, the detection side of a kind of support insulator boundary defect and interface state is particularly related to
Method.
Background technology
Background that this section is intended to provide an explanation of the embodiments of the present invention set forth in the claims or context.Herein
Description recognizes it is the prior art not because not being included in this part.
Polyurethane Perfusion formula composite post insulator is as a kind of novel compound post insulator, since exploitation,
High volume applications on the busbar pillar and disconnecting switch support insulator of multiple key projects at home.It is this typical compound
Support insulator is usually made of three kinds of insulative dielectric materials, is sulphurated siliastic sheath (including the full skirt portion of outer layer respectively
Point), the maximum polyurethane foam of volume accounting of the cylindric epoxy and cylinder interior filling of one circle of centre.In this insulation
In structure, three kinds of materials for respectively having different excellent physical properties have farthest ensured the electrical insulation strength of insulator, machine
The most basic also most important performance requirements such as tool intensity, ageing-resistant degree, meanwhile, on this basis, since the use of polyurethane is led
Cause insulation protonatomic mass mitigates significantly and the type insulator tends to popular major reason in the application.
Even however such a very good composite post insulator of various aspects of performance that seems also is not without
Slack to hit, a Chang Yunwei is still needed to go to detect as best one can, is discovered and ruled out the problems such as accident defect therein, with utmostly
On ensure the safe and reliable of insulator.By the basic structure of Polyurethane Perfusion formula composite post insulator it is found that three kinds of materials
It stacks layered structure and is easiest to the defect that a kind of caused defect is exactly different materials interface, and this defect usually shows
For not being bonded of interface, material deficiency.The presence of this defect can make the electric field in support insulator generate distortion, may
Cause shelf depreciation even causes support insulator breakdown when serious, and therefore, this defect will be to the safety of electric system
Stable operation brings great hidden danger.For this defect, due to its position, concealment takes normal defect detection method
Effect may be barely satisfactory in the indexs such as accuracy, feasibility and ease for operation.
Invention content
In view of the foregoing, it is necessary to which a kind of detection side of improved support insulator boundary defect and interface state is provided
Method is based on THz wave reflective-mode time-domain waveform analysis, is completed under higher accuracy in detection and operational requirements
To the evaluation work of Polyurethane Perfusion formula composite post insulator interface state.
Technical solution provided by the invention is：A kind of detection method of support insulator boundary defect, the insulator by
It is interior and include outside layer of polyurethane, epoxy layer, rubber layer, sequentially form the first interface, second contact surface and with the main boundary that contacts of the external world
Face, chooses a spatial point in the main interface, and setting THz wave obtains the Terahertz of the spatial point in a reflective mode enabling
Time domain waveform is reflected, the spatial point sequentially forms master pulse in the main interface, the second contact surface, first interface
Punching, the first echo impulse and the second echo impulse, Terahertz reflection time domain waveform and the non-defective region of the spatial point
Terahertz reflect time domain waveform, when there is third echo impulse or the echo impulse energy becomes larger, the corresponding sky
Between point where detection plane on Presence of an interface defect.
Further, the pulse energy includes amplitude and pulsewidth.
Further, after the third echo impulse appears in first echo impulse, boundary defect is located at described
Second contact surface, compared with non-defective area domain waveform, the main pulse, the pulse energy of first echo impulse are constant, described
The amplitude of second echo impulse reduces, and the amplitude of the third echo impulse is between the first echo impulse amplitude and described the
Between two echo impulse amplitudes.
Further, after the third echo impulse appears in second echo impulse, boundary defect is located at described
First interface, compared with non-defective area domain waveform, the main pulse, first echo impulse, second echo impulse
Pulse energy is constant, and the amplitude of the third echo impulse is less than the second echo impulse amplitude.
Further, the first echo impulse energy becomes larger, and boundary defect is located at the second contact surface, with non-defective area
Domain waveform is compared, and the amplitude of first echo impulse increases or pulsewidth broadens, and the amplitude of second echo impulse reduces.
Further, the second echo impulse energy becomes larger, and boundary defect is located at first interface, with non-defective area
Domain waveform is compared, and the amplitude of second echo impulse increases or pulsewidth broadens.
The present invention also provides a kind of detection method of support insulator interface state, the insulator includes poly- from inside to outside
Urethane layer, epoxy layer, rubber layer sequentially form the first interface, second contact surface and the main interface contacted with the external world, including following step
Suddenly：
It is 0 ° to choose initial vertical section α 0；
Several tested points are taken on the intersecting lens of the main interface and α 0；
THz wave is set in a reflective mode enabling to set the Terahertz reflection time domain that incident direction obtains each tested point
Waveform, each tested point the main interface, the second contact surface, first interface sequentially form main pulse, first time
Wave impulse and the second echo impulse；
The Terahertz of Terahertz the reflection time domain waveform and non-defective region of each tested point under more same incident direction
Reflect time domain waveform；
When there is third echo impulse or the echo impulse energy becomes larger, α 0 and defect information are recorded；
The assignment after gyration α of putting english of α 0 is repeated into other above-mentioned steps in α 0；
Previous step is repeated, until α 0 is greater than or equal to 180 °, compares the waveform of whole defect areas and non-defective region,
It determines defect information, completes assessment test；
Further, the initial vertical section α 0 passes through the axis of the insulator；
Further, the incident direction is radial.
Further, the pulse energy includes amplitude and pulsewidth, wherein
After the third echo impulse appears in first echo impulse, boundary defect is located at the second contact surface,
Compared with non-defective area domain waveform, the main pulse, the pulse energy of first echo impulse are constant, the second echo arteries and veins
The amplitude of punching reduces, and the amplitude of the third echo impulse is between the first echo impulse amplitude and second echo impulse
Between amplitude；
After the third echo impulse appears in second echo impulse, boundary defect is located at first interface,
Compared with non-defective area domain waveform, the main pulse, first echo impulse, second echo impulse pulse energy not
Become, the amplitude of the third echo impulse is less than the second echo impulse amplitude；
The first echo impulse energy becomes larger, and boundary defect is located at the second contact surface, with non-defective area domain waveform phase
Than the amplitude of first echo impulse increases or pulsewidth broadens, and the amplitude of second echo impulse reduces；
The second echo impulse energy becomes larger, and boundary defect is located at first interface, with non-defective area domain waveform phase
Than the amplitude of second echo impulse increases or pulsewidth broadens.
Further, α is equal to 30 °；
Further, each defective locations include interface location and radial thickness information；
Further, in the case where there is the third echo impulse situation, defect radial thickness is millimeter magnitude or more, and root
It is calculated according to following formula：
Wherein：
Time intervals of the t1 between main pulse and the peak value of the first echo impulse；
Time intervals of the t2 between the first echo impulse and the peak value of the second echo impulse；
Time intervals of the t3 between third echo impulse and the peak value of its echo impulse previous；
D1 is the radial thickness of epoxy layer；
D2 is the radial thickness of layer of polyurethane；
D3 is the radial thickness of boundary defect；
N1 and n2 is the mean refractive index of epoxy layer and layer of polyurethane respectively；
C is the spread speed of terahertz light under vacuum, the i.e. light velocity.
Further, become larger under situation in the appearance echo impulse energy, the radial thickness is millimeter magnitude or less.
Compared with prior art, the present invention chooses several spatial points in support insulator main interface, and THz wave is arranged
The Terahertz reflection time domain waveform of each spatial point is obtained in a reflective mode enabling, and each spatial point is in the main interface, described the
Second interface, first interface sequentially form main pulse, the first echo impulse and the second echo impulse, more each spatial point
The Terahertz in Terahertz reflection time domain waveform and non-defective region reflect time domain waveform, when there is third echo impulse or described
When echo impulse energy becomes larger, Presence of an interface defect in detection plane where the corresponding spatial point.Check and evaluation of the present invention
Method is based on THz wave reflective-mode time-domain waveform analysis, and accuracy in detection is high, operability is strong, and feasibility is reliable, can
Meet the evaluation work requirement to Polyurethane Perfusion formula composite post insulator interface state.
Description of the drawings
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the support insulator boundary defect overhaul flow chart of the present invention.
Fig. 2 is the support insulator interface state estimation flow figure of the present invention.
Fig. 3 is the post insulator subsample schematic diagram of the present invention.
Fig. 4 is that the non-defective region Terahertz of the present invention reflects time domain waveform.
Fig. 5 is that the defect area Terahertz of the present invention reflects time domain waveform.
Fig. 6 is that another defect area Terahertz of the present invention reflects time domain waveform.
Following specific implementation mode will further illustrate the present invention embodiment in conjunction with above-mentioned attached drawing.
Specific implementation mode
In order to be more clearly understood that the above objects, features, and advantages of the embodiment of the present invention, below in conjunction with the accompanying drawings and
The present invention will be described in detail for specific implementation mode.It should be noted that in the absence of conflict, the embodiment party of the application
Feature in formula can be combined with each other.
Many details are elaborated in the following description in order to fully understand the embodiment of the present invention, described reality
It is some embodiments of the invention to apply mode only, rather than whole embodiments.Based on the embodiment in the present invention, originally
The every other embodiment that field those of ordinary skill is obtained without making creative work, belongs to this hair
The range of bright embodiment protection.
Unless otherwise defined, all of technologies and scientific terms used here by the article and the technology for belonging to the embodiment of the present invention
The normally understood meaning of technical staff in field is identical.Used term is intended merely in the description of the invention herein
The purpose of specific embodiment is described, it is not intended that in the limitation embodiment of the present invention.
THz wave is electromagnetic wave of the frequency in 0.1-10THz, penetrability is strong, photon energy is low and pulse width only
Preferably agree with the detection to composite post insulator boundary defect and evaluation work in good characteristics such as picosecond magnitudes, is reflecting
Under pattern, the different response forms using THz wave interface reflection echo at fault location and non-defective place can specifically divide
Discern boundary defect.
Typical composite post insulator is usually made of three kinds of insulative dielectric materials, and the insulator wraps from inside to outside
Layer of polyurethane, epoxy layer, rubber layer are included, the first interface, second contact surface and the main interface contacted with the external world are sequentially formed.In a tool
In body embodiment, by taking Polyurethane Perfusion formula composite post insulator as an example, be successively from inside to outside polyurethane foam filler,
Epoxy cylinder, sulphurated siliastic sheath (including full skirt part), the first boundary formed with polyurethane foam filler and epoxy cylinder
The main interface of second contact surface and silicone rubber jacket outer surface that face, epoxy cylinder and silicone rubber jacket are formed.
By by terahertz sources alignment probe support insulator radial direction successively pass through silicone rubber jacket, epoxy cylinder,
Polyurethane foam filler is incident from outside to inside, in the case where the non-defective interface in other words in interface is in normal condition, reflection
A main peak (main pulse) and two echo impulses, and the time interval of each peak value of pulse will occur in the time domain waveform obtained afterwards
It should be able to be shown in strict accordance with formula t=2d*n/c, when d takes the radial thickness of silicone rubber jacket in formula and n takes silicon rubber
The desired value of time interval between main peak and first echo impulse peak value is can be obtained when mean refractive index, similarly, as d in formula
When can be obtained when the radial thickness of epoxy cylinder and n being taken to take the mean refractive index of epoxy between the first and second two echo impulses
Between the desired value that is spaced, in other words, when time interval meets above-mentioned desired value to overall pulse number between 3 and each pulse, i.e.,
It can obtain the insulation normal assessment result of sub-interface at the test point.
A kind of detection method of support insulator boundary defect provided by the invention is described in detail with reference to Fig. 1.
Fig. 1 shows the detection method point the following steps：
Step 1, a spatial point is chosen in the main interface；
Step 2, setting THz wave obtains the Terahertz reflection time domain waveform of the spatial point in a reflective mode enabling, described
Spatial point sequentially forms main pulse, the first echo impulse and in the main interface, the second contact surface, first interface
Two echo impulses；
Step 3, the Terahertz reflection time domain waveform of the spatial point and the Terahertz in non-defective region reflect time domain
Waveform；
Step 4, when there is third echo impulse or the echo impulse energy becomes larger, where the corresponding spatial point
Presence of an interface defect in plane is detected, otherwise obtains the normal conclusion in interface,
Wherein：The pulse energy includes amplitude and pulsewidth,
Presence of an interface defect situation one：
After the third echo impulse appears in first echo impulse, boundary defect is located at the second contact surface,
Compared with non-defective area domain waveform, the main pulse, the pulse energy of first echo impulse are constant, the second echo arteries and veins
The amplitude of punching reduces, and the amplitude of the third echo impulse is between the first echo impulse amplitude and second echo impulse
Between amplitude.
Presence of an interface defect situation two：
After the third echo impulse appears in second echo impulse, boundary defect is located at first interface,
Compared with non-defective area domain waveform, the main pulse, first echo impulse, second echo impulse pulse energy not
Become, the amplitude of the third echo impulse is less than the second echo impulse amplitude.
Presence of an interface defect situation three：
The first echo impulse energy becomes larger, and boundary defect is located at the second contact surface, with non-defective area domain waveform phase
Than the amplitude of first echo impulse increases or pulsewidth broadens, and the amplitude of second echo impulse reduces.
Presence of an interface defect situation four：
The second echo impulse energy becomes larger, and boundary defect is located at first interface, with non-defective area domain waveform phase
Than the amplitude of second echo impulse increases or pulsewidth broadens.
It is appreciated that working as Presence of an interface defect, since the fault location at interface can increase order of reflection, when obtained reflection
Umber of pulse or a certain echo impulse energy change when domain waveform can have more non-defective, when interface is more than 3, this method can also fit
With.
The detection method of support insulator interface state provided by the invention is described in detail with reference to Fig. 2.
This approach includes the following steps：
Step 101, it is=0 ° to choose initial vertical section α 0；
Step 102, several tested points are taken on the intersecting lens of the main interface and α 0；
Step 103, setting THz wave is in a reflective mode enabling to set the Terahertz that incident direction obtains each tested point
Time domain waveform is reflected, each tested point sequentially forms master pulse in the main interface, the second contact surface, first interface
Punching, the first echo impulse and the second echo impulse；Wherein：
The initial vertical section α 0 passes through the axis of the insulator；
The incident direction is radial；
Step 104：The Terahertz reflection time domain waveform of each tested point and non-defective region under more same incident direction
Terahertz reflect time domain waveform；
Step 105：When there is third echo impulse or the echo impulse energy becomes larger, α 0 and defect information are recorded；
Wherein：The pulse energy includes amplitude and pulsewidth,
Presence of an interface defect situation one：
After the third echo impulse appears in first echo impulse, boundary defect is located at the second contact surface,
Compared with non-defective area domain waveform, the main pulse, the pulse energy of first echo impulse are constant, the second echo arteries and veins
The amplitude of punching reduces, and the amplitude of the third echo impulse is between the first echo impulse amplitude and second echo impulse
Between amplitude.
Presence of an interface defect situation two：
After the third echo impulse appears in second echo impulse, boundary defect is located at first interface,
Compared with non-defective area domain waveform, the main pulse, first echo impulse, second echo impulse pulse energy not
Become, the amplitude of the third echo impulse is less than the second echo impulse amplitude.
Presence of an interface defect situation three：
The first echo impulse energy becomes larger, and boundary defect is located at the second contact surface, with non-defective area domain waveform phase
Than the amplitude of first echo impulse increases or pulsewidth broadens, and the amplitude of second echo impulse reduces.
Presence of an interface defect situation four：
The second echo impulse energy becomes larger, and boundary defect is located at first interface, with non-defective area domain waveform phase
Than the amplitude of second echo impulse increases or pulsewidth broadens.
Step 106：α 0 is put english into gyration α assignment in α 0, repeats step 102,103,104,105.
Step 107：Step 106 is repeated, until α 0 is greater than or equal to 180 °, compares whole defect areas and non-defective region
Waveform, determine defect information, complete assessment test.
Wherein, each defect information includes interface location and radial thickness information, and interface location is tested point position and angle
Degree,
In the case where there is the third echo impulse situation, defect radial thickness is millimeter magnitude or more, and according to following public affairs
Formula calculates：
Wherein：
Time intervals of the t1 between main pulse and the peak value of the first echo impulse；
Time intervals of the t2 between the first echo impulse and the peak value of the second echo impulse；
Time intervals of the t3 between third echo impulse and the peak value of its echo impulse previous；
D1 is the radial thickness of epoxy layer；
D2 is the radial thickness of layer of polyurethane；
D3 is the radial thickness of boundary defect；
N1 and n2 is the refractive index of epoxy layer and layer of polyurethane respectively；
C is the spread speed of terahertz light under vacuum, the i.e. light velocity.
Become larger under situation there is the echo impulse energy, the radial thickness is millimeter magnitude or less.
In a specific embodiment, consider that the factor of probe hot spot actual size, Fig. 3 occur for workload and THz wave
It shows and chooses an initial insulator vertical section α 0 (α 0=0 °) radially, in the phase of α 0 vertical section and silicon rubber outer surface
Interval selects tested point (avoiding full skirt part), spacing distance 10cm successively on intersection；Radial incidence THz wave obtains α 0
The time domain waveform of each tested point on vertical section compares non-defective area domain waveform, marks boundary defect；Complete the survey of a vertical section
After measuring work, which is rotated clockwise into 30 ° (α=30 °), takes the tested point on new vertical section to detect again, with this
Analogize, need rotation 6 times in total, chooses 6 vertical sections, and detect to the tested point on each vertical section.In selective analysis waveform
Abnormal phenomenon, the observation wherein quantity of pulse, the information such as energy (being embodied in pulse amplitude) of echo impulse, with final
Whether determining boundary defect.
Fig. 4 shows the corresponding Terahertz reflection time domain waveform in support insulator normal condition interface (non-defective place),
In, d1, d2 are the thickness of silicone rubber jacket (no full skirt part) and epoxy cylinder respectively；N1, n2 are silicon rubber and epoxy cylinder respectively
Mean refractive index；Three pulses are from left to right main pulse, the first echo impulse and the second echo impulse respectively.Burst length
Interval is the light velocity in strict accordance with t=2dn/c, c.
Fig. 5 shows the corresponding Terahertz reflection time domain waveform in support insulator abnormal condition interface (defective),
Wherein, d3 indicate boundary defect radially size (defect be usually expressed as interface be not bonded, material deficiency).In Fig. 4
The pulse shown in dotted line frame is an increased pulse, this echo impulse number due to boundary defect increase order of reflection
Increased situation is measured only to occur at flaw size larger (millimeter magnitude).Newly-increased pulse (the i.e. third echo arteries and veins identified in Fig. 4
Punching) on the time immediately following after first echo impulse, showing that defect is happened at the interface (i.e. the of silicone rubber jacket and epoxy cylinder
Second interface) on.It can obviously observe that second echo impulse amplitude decreases (i.e. pulse compared to normal condition waveform simultaneously
Energy reduces).
Wherein, since the time interval of each peak value of pulse should be able to show that then d3 can in strict accordance with formula t=2d*n/c
To be obtained by any one in following formula：
It is appreciated that if defect point is the interface of epoxy cylinder and polyurethane filler, third echo impulse answers table
It is now to be closely followed after second echo impulse on the time.The third echo impulse can have 2, show as on the time respectively
Immediately following after first echo impulse and second echo impulse.
Fig. 6 shows the corresponding another Terahertz reflection time domain wave in support insulator abnormal condition interface (defective)
Shape, the first echo impulse when the pulse of mark 1 and mark 2 indicates normal interface and boundary defect respectively at the first echo impulse
The waveform of waveform, mark 1 and mark 2 is overlapped in same place, which is (the millimeter in the case where boundary defect scale is smaller
Below magnitude) occur first echo impulse Amplitude Ration normal interface measure gained first echo impulse amplitude it is big (or
It shows as pulsewidth to broaden, embodies the characteristics of pulse energy becomes larger in a word).Meanwhile second echo impulse amplitude still can phase
It should reduce.The defect characteristic waveform that Fig. 5 embodies is happened near first echo impulse, shows that defect is to be happened at silicon rubber
The interface (i.e. second contact surface) of plastic boot and epoxy cylinder.
It is appreciated that if defect point is the interface of epoxy cylinder and polyurethane filler, second echo impulse energy
Amount enhancing.If occurring at two simultaneously, it is possible to which the situation of appearance is that 1) the first echo impulse and the second echo impulse go out later
Now new echo impulse, and the second echo impulse amplitude reduces；2) occur new echo impulse after the first echo impulse, and the
Two echo impulse amplitudes do not reduce or enhance；3) the first echo impulse energy becomes larger, and the second echo impulse amplitude reduces, and later
There is new echo impulse；4) the first echo impulse energy becomes larger, and the second echo impulse amplitude does not reduce or enhances.In other realities
It applies in mode, α values are not limited to 30 °, can be the arbitrary value within 180 °, direction of rotation is not limited to clockwise.
Finally, by non-defective region (normal condition) waveform of all tested points and defect area (abnormal condition) waveform
Compare, determines that boundary defect and its location information, assessment terminate.Check and evaluation method of the present invention is based on THz wave reflective-mode
Time-domain waveform analysis, accuracy in detection is high, operability is strong, and feasibility is reliable, disclosure satisfy that Polyurethane Perfusion formula composite support
The evaluation work requirement of column insulator interface state.
Embodiment of above is only to illustrate the technical solution of the embodiment of the present invention and unrestricted, although with reference to it is above preferably
The embodiment of the present invention is described in detail in embodiment, it will be understood by those of ordinary skill in the art that, it can be to this hair
The technical solution of bright embodiment is modified or equivalent replacement should not all be detached from the embodiment of the present invention technical solution spirit and
Range.
Claims (10)
1. a kind of detection method of support insulator boundary defect, the insulator include from inside to outside layer of polyurethane, epoxy layer,
Rubber layer sequentially forms the first interface, second contact surface and the main interface contacted with the external world, it is characterised in that：In the main interface
One spatial point of upper selection, setting THz wave obtain the Terahertz reflection time domain waveform of the spatial point, institute in a reflective mode enabling
State spatial point the main interface, the second contact surface, first interface sequentially form main pulse, the first echo impulse and
Second echo impulse, the Terahertz reflection time domain waveform and the Terahertz in non-defective region of the spatial point reflect time domain wave
Shape, when there is third echo impulse or the echo impulse energy becomes larger, where the corresponding spatial point in detection plane
Presence of an interface defect.
2. the detection method of support insulator boundary defect according to claim 1, it is characterised in that：The pulse energy
Including amplitude and pulsewidth.
3. the detection method of support insulator boundary defect according to claim 2, it is characterised in that：The third echo
After pulse appears in first echo impulse, boundary defect is located at the second contact surface, compared with non-defective area domain waveform,
The main pulse, the pulse energy of first echo impulse are constant, and the amplitude of second echo impulse reduces, the third
The amplitude of echo impulse is between the first echo impulse amplitude and the second echo impulse amplitude.
4. the detection method of support insulator boundary defect according to claim 2, it is characterised in that：The third echo
After pulse appears in second echo impulse, boundary defect is located at first interface, compared with non-defective area domain waveform,
The main pulse, first echo impulse, the pulse energy of second echo impulse are constant, the third echo impulse
Amplitude is less than the second echo impulse amplitude.
5. the detection method of support insulator boundary defect according to claim 2, it is characterised in that：First echo
Pulse energy becomes larger, and boundary defect is located at the second contact surface, compared with non-defective area domain waveform, first echo impulse
Amplitude increases or pulsewidth broadens, and the amplitude of second echo impulse reduces.
6. the detection method of support insulator boundary defect according to claim 2, it is characterised in that：Second echo
Pulse energy becomes larger, and boundary defect is located at first interface, compared with non-defective area domain waveform, second echo impulse
Amplitude increases or pulsewidth broadens.
7. a kind of detection method of support insulator interface state, the insulator include from inside to outside layer of polyurethane, epoxy layer,
Rubber layer sequentially forms the first interface, second contact surface and the main interface contacted with the external world, which is characterized in that include the following steps：
It is 0 ° to choose initial vertical section α 0；
Several tested points are taken on the intersecting lens of the main interface and α 0；
THz wave is set in a reflective mode enabling with set incident direction obtain each tested point Terahertz reflect time domain waveform,
Each tested point sequentially forms main pulse, the first echo impulse in the main interface, the second contact surface, first interface
And second echo impulse；
The Terahertz reflection time domain waveform of each tested point and the Terahertz in non-defective region reflect under more same incident direction
Time domain waveform；
When there is third echo impulse or the echo impulse energy becomes larger, α 0 and defect information are recorded；
The assignment after gyration α of putting english of α 0 is repeated into other above-mentioned steps in α 0；
Previous step is repeated, until α 0 is greater than or equal to 180 °, the waveform of whole defect areas and non-defective region is compared, determines
Defect information completes assessment test.
8. the detection method of support insulator interface state according to claim 7, it is characterised in that：The initial vertical profile
Face α 0 passes through the axis of the insulator；The incident direction is radial.
9. the detection method of support insulator interface state according to claim 7, it is characterised in that：The pulse energy
Including amplitude and pulsewidth, wherein
After the third echo impulse appears in first echo impulse, boundary defect is located at the second contact surface, and non-
Defect area waveform is compared, and the main pulse, the pulse energy of first echo impulse are constant, second echo impulse
Amplitude reduces, and the amplitude of the third echo impulse is between the first echo impulse amplitude and the second echo impulse amplitude
Between；
After the third echo impulse appears in second echo impulse, boundary defect is located at first interface, and non-
Defect area waveform is compared, and the main pulse, first echo impulse, the pulse energy of second echo impulse are constant,
The amplitude of the third echo impulse is less than the second echo impulse amplitude；
The first echo impulse energy becomes larger, and boundary defect is located at the second contact surface, compared with non-defective area domain waveform, institute
The amplitude for stating the first echo impulse increases or pulsewidth broadens, and the amplitude of second echo impulse reduces；
The second echo impulse energy becomes larger, and boundary defect is located at first interface, compared with non-defective area domain waveform, institute
The amplitude for stating the second echo impulse increases or pulsewidth broadens.
10. the detection method of support insulator interface state according to claim 7, it is characterised in that：α is equal to 30 °, often
One defective locations include interface location and radial thickness information.
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