CN108796440A - A kind of preparation method of mask plate, mask plate, evaporated device - Google Patents
A kind of preparation method of mask plate, mask plate, evaporated device Download PDFInfo
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- CN108796440A CN108796440A CN201810836194.7A CN201810836194A CN108796440A CN 108796440 A CN108796440 A CN 108796440A CN 201810836194 A CN201810836194 A CN 201810836194A CN 108796440 A CN108796440 A CN 108796440A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000007747 plating Methods 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 24
- 230000008020 evaporation Effects 0.000 claims abstract description 19
- 238000001704 evaporation Methods 0.000 claims abstract description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 238000007788 roughening Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 239000000084 colloidal system Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 238000001994 activation Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229940117975 chromium trioxide Drugs 0.000 claims description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 4
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000002385 metal-ion deposition Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 21
- 230000000694 effects Effects 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 8
- 229910021645 metal ion Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000005323 electroforming Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004520 agglutination Effects 0.000 description 1
- 210000002469 basement membrane Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- -1 iron ion Chemical class 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of preparation method of mask plate, mask plate, evaporated devices.This method includes：Basic mode pattern layer is formed in substrate, and multiple hollow-out parts are provided in basic mode pattern layer；Mask plate film layer is formed in basic mode pattern layer using chemical plating process, mask plate film layer posts on the outer surface of the basic mode pattern layer；Substrate and basic mode pattern layer are dispelled, mask plate is obtained.The mask plate prepared using this method, film layer is fine and close, porosity is low, and edge effect is not present, and has more uniform thickness and better precision, improves evaporation effect.Mask plate includes mask portion and multiple openings for being arranged in mask portion, side protrusion is provided on the neighboring of opening, in vapor deposition, side protrusion is arranged towards orientation substrate to be deposited, evaporation material vapor deposition is effectively blocked to adjacent pixel, the mixed color phenomenon for reducing shade and adjacent pixel improves the display quality of oled panel.
Description
Technical field
The present invention relates to display technology fields, and in particular to a kind of preparation method of mask plate, mask plate, evaporated device.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) is that message area is emerging
Novel display technology, with all solid state, active shines, high contrast, fast response time, visual angle is wide, color is true to nature, clarity
It is high, super to win, be easy to many advantages, such as Flexible Displays, it has been applied to mobile phone, personal data processor, digital camera, automobile instrument
The small-medium sizes colour such as disk is shown.In future, OLED probably becomes the novel display technology for substituting LCD.
Evaporation coating technique is active matrix organic light-emitting diode (Active-Matrix Organic Light Emitting
Diode, AMOLED) luminous organic material is deposited into the mainstream technology on anode in production process, principle is using fine
Metal mask plate (Fine Metal Mask, FMM) blocks substrate, and luminous organic material is heated to volatilize and by fine on FMM
On opening vapor deposition to the anode of oled substrate, therefore, in order to improve the precision of OLED, it is necessary to which FMM has high precision.With
The continuous improvement of display industry and consumer to resolution requirement, the manufacture difficulty of FMM is also continuously increased, especially aobvious in VR
Show etc. that the field having high requirements to resolution ratio, the lithographic method of traditional FMM have been difficult to meet the requirements, therefore develops new
FMM manufacture crafts become the important topic that FMM research staff faces.
In face of problem above, domestic and foreign manufacturers develop the FMM such as laser mask plate (LPM), electroforming mask plate (EFM) in succession
New process is made, but these techniques are not yet ripe, can't realize volume production.For EFM technologies, due to electroplating technology need according to
Rely impressed current, and thicknesses of layers is easily influenced by linear electric current density, making electroforming mask plate, there are edge effects, seriously restrict
The development of EFM.Therefore, in order to improve the precision of metal mask plate, the film thickness uniformity of metal mask plate is improved, it would be highly desirable to propose one
The preparation method of the new metal mask plate of kind.
Invention content
The purpose of the embodiment of the present invention is to provide a kind of preparation method of mask plate, mask plate, evaporated device, to eliminate
The edge effect of mask plate obtains the more uniform mask plate of thickness, improves the precision of mask plate.
In order to solve the above-mentioned technical problem, the embodiment of the present invention provides a kind of preparation method of mask plate, including：
Basic mode pattern layer is formed in substrate, and multiple hollow-out parts are provided in the basic mode pattern layer；
Mask plate film layer is formed in the basic mode pattern layer using chemical plating process, the mask plate film layer posts
On the outer surface of the basic mode pattern layer；
The substrate and the basic mode pattern layer are dispelled, mask plate is obtained.
Optionally, described that mask plate film layer is formed in the basic mode pattern layer using chemical plating process, including：
Substrate with basic mode pattern layer is placed into plating solution；
Metal ion deposition in plating solution forms mask plate film layer on the outer surface of the basic mode pattern layer.
Optionally, the material of the basic mode pattern layer is metal, described to dispel the substrate and the basic mode pattern layer, is obtained
Mask plate is obtained, including：
The basic mode pattern layer for posting mask plate film layer is removed from the substrate；
The basic mode pattern layer for posting mask plate film layer is placed in mold release solution to dispel the basic mode pattern layer,
Obtain mask plate.
Optionally, the material of the basic mode pattern layer includes aluminium, and the mold release solution includes sodium hydroxide solution.
Optionally, the material of the mask plate includes nickel and iron.
Optionally, the material of the basic mode pattern layer includes colloid, uses chemical plating process in the basic mode figure described
It is formed before mask plate film layer in pattern layer, the method further includes：
Roughening treatment is carried out to the basic mode pattern layer；
Activation process is carried out to basic mode pattern layer；
Dispergation processing is carried out to basic mode pattern layer.
Optionally, described that roughening treatment is carried out to the basic mode pattern layer, including：Using coarsening solution to the basic mode pattern
Layer carries out roughening treatment, a concentration of 180mL/L~220mL/L of sulfuric acid in coarsening solution, and a concentration of 350g/L of chromium trioxide~
The temperature of 450g/L, roughening treatment are 60 DEG C~70 DEG C, and the time is 8min~12min.
Optionally, activation process is carried out to basic mode pattern layer, including：Basic mode pattern layer is carried out using colloid palladium activation method
Activation process.
Optionally, described to dispel substrate and basic mode pattern layer, mask plate is obtained, including：
The basic mode pattern layer for posting mask plate film layer is removed from the substrate；
Basic mode pattern layer is removed using colloid cleaning solution, obtains mask plate.
Optionally, the material of the basic mode pattern layer includes photoresist.
In order to solve the above-mentioned technical problem, the embodiment of the present invention additionally provides a kind of mask plate, including mask portion and sets
Multiple openings in the mask portion are set, side protrusion is provided on the neighboring of the opening.
In order to solve the above-mentioned technical problem, the embodiment of the present invention additionally provides a kind of evaporated device, including evaporation source and
Above-described mask plate, the mask plate are arranged between the evaporation source and substrate to be deposited, and the side of the mask plate is convex
Portion is arranged towards orientation substrate to be deposited.
The preparation method of the mask plate of the embodiment of the present invention uses chemical plating process to form mask plate film layer to be covered
Diaphragm plate, chemical plating process do not depend on impressed current, the reducing agent in plating solution are only leaned on to carry out redox reaction.In basic mode pattern layer
Under the catalytic action of outer surface, the metal ion in plating solution is constantly deposited on basic mode pattern layer outer surface.Due to chemical plating work
Skill is not influenced by the density of electric fluxline, so, it is deposited on the thickness of the mask plate film layer on basic mode pattern layer outer surface more
Uniformly, and there is no the edge effects similar to electroforming mask plate.The mask plate film layer formed using chemical plating process
Film layer is dense, porosity is low, while chemical plating also has the feature of environmental protection.Therefore, finally formed using chemical plating process
Mask plate has more uniform thickness and better precision, and edge effect is not present, and then can improve the essence of vapor deposition
Degree and evaporation effect, improve the quality of oled panel.The mask plate prepared using this method, the neighboring of the opening of mask plate
On be provided with side protrusion, vapor deposition when, side protrusion be arranged towards orientation substrate to be deposited, effectively block evaporation material be deposited arrive
Adjacent pixel reduces the mixed color phenomenon of shade and adjacent pixel, improves the display quality of oled panel.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that understand through the implementation of the invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and is obtained in claim and attached drawing.
Description of the drawings
Attached drawing is used for providing further understanding technical solution of the present invention, and a part for constitution instruction, with this
The embodiment of application technical solution for explaining the present invention together, does not constitute the limitation to technical solution of the present invention.
Fig. 1 is the schematic diagram of the preparation method of mask plate of the embodiment of the present invention；
Fig. 2 a are that the cross section structure schematic diagram after basic mode pattern layer is formed in first embodiment of the invention；
Fig. 2 b are the overlooking structure diagram of Fig. 2 a；
Fig. 3 a are that the overlooking structure diagram after mask plate film layer is formed in first embodiment of the invention；
Fig. 3 b are the cross section structure schematic diagram of Fig. 3 a；
Fig. 4 is the cross section structure schematic diagram for the mask plate prepared using the method for first embodiment of the invention；
Fig. 5 is the dimensional structure diagram of the mask plate of Fig. 4；
Fig. 6 is the schematic diagram being deposited using mask plate shown in Fig. 4；
Fig. 7 is the enlarged diagram of part A in Fig. 6.
Reference sign：
10-substrates；20-basic mode pattern layers；21-hollow-out parts；
30-mask plates；31-mask portions；32-sides protrusion；
33-openings；100-substrates；101-pixel defining layers；
102-insulated columns；103-the regions OLED.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention
Embodiment be described in detail.It should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature mutually can arbitrarily combine.
Fig. 1 is the schematic diagram of the preparation method of mask plate of the embodiment of the present invention.The preparation method of the mask plate of the present embodiment
Including：
S11：Basic mode pattern layer is formed in substrate, and multiple hollow-out parts are provided in the basic mode pattern layer；
S12：Mask plate film layer, the mask plate film layer are formed in the basic mode pattern layer using chemical plating process
It posts on the outer surface of the basic mode pattern layer；
S13：Substrate and basic mode pattern layer are dispelled, mask plate is obtained.
The technical solution of the embodiment of the present invention will be discussed in detail by the preparation process of mask plate below.Wherein, deposition can
Using already known processes such as sputtering, vapor deposition, chemical vapor depositions, known coating processes can be used in coating, and etching can be used known
Method, do not do specific restriction herein.
The technology contents of the present invention will be discussed in detail by specific embodiment below.
First embodiment：
In the present embodiment, the preparation method of the mask plate will be discussed in detail using basic mode pattern layer material as metal.
S11：Basic mode pattern layer is formed in substrate, is provided with multiple hollow-out parts in the basic mode pattern layer, be may include：
Basic mode film is deposited on the substrate 10, and a layer photoresist is coated on basic mode film；Using monotone mask plate pair
Photoresist is exposed and develops, and forms complete exposure area in hollow-out parts pattern position, it is thin to expose basic mode for unglazed photoresist
Film forms unexposed area in other positions, retains photoresist；The basic mode film of complete exposure area is performed etching and removed
Remaining photoresist forms basic mode pattern layer 20, has multiple hollow-out parts 21 in basic mode pattern layer 20, such as Fig. 2 a and Fig. 2 b institutes
Show, Fig. 2 a are that the cross section structure schematic diagram after basic mode pattern layer is formed in first embodiment of the invention, and Fig. 2 b are the vertical view of Fig. 2 a
Structural schematic diagram.Wherein, substrate of glass or quartz substrate may be used in substrate, and the material of basic mode film is metal material, such as
Aluminium etc..It is easily understood that in order to prepare the mask plate of vapor deposition, hollow-out parts 21 are usually set in basic mode pattern layer 20 in array
It sets.
S12：Mask plate film layer, the mask plate film layer are formed in the basic mode pattern layer using chemical plating process
It posts on the outer surface of the basic mode pattern layer, may include：
Substrate with basic mode pattern layer 20 is placed into plating solution, under the catalytic action on 20 surface of basic mode pattern layer,
Metal ion in plating solution is constantly deposited on the outer surface of basic mode pattern layer 20, that is to say, that the metal ion in plating solution is not
It is disconnected to be deposited on the end face of basic mode pattern layer 20 and the side of hollow-out parts 21, mask plate film layer 30 ' is formed, such as Fig. 3 a and Fig. 3 b
Shown, Fig. 3 a are that the overlooking structure diagram after mask plate film layer is formed in first embodiment of the invention, and Fig. 3 b are Fig. 3 a's
Cross section structure schematic diagram.Include posting on the end face of basic mode pattern layer 20 from can be seen that mask plate film layer 30 ' in Fig. 3 b
Mask portion 31 and post the side protrusion 32 on the side of hollow-out parts 21, further include the opening 33 positioned at hollow-out parts region,
Side protrusion 32 is located on the peripheral edge of opening 33.
From Fig. 3 a as can be seen that during chemical plating process forms mask plate film layer 30 ', due to side protrusion 32
It is formed on the side of hollow-out parts 21, so, the width W2 of the connection rib between the two neighboring hollow-out parts 21 of basic mode pattern layer
It is in specific implementation, two neighboring less than the width W1 of the connection rib between the two neighboring opening 33 of mask plate film layer 30 '
The actual size of the width W2 of connection rib between hollow-out parts 21 can be according to the width of the connection rib between two neighboring opening 33
The thickness of degree W1 and mask plate specifically determines.It, can be by controlling plating solution during forming mask plate film layer
The time of ingredient and chemical plating, temperature control the thicknesses of layers of mask plate film layer, and then obtain satisfactory metal
The thickness and ingredient of mask plate.
S13：Substrate and basic mode pattern layer are dispelled, mask plate is formed, may include：
By basic mode pattern layer 20 and posts the mask plate film layer 30 ' in basic mode pattern layer 20 and removed from substrate 10；
The basic mode pattern layer 20 for posting mask plate film layer 30 ' is placed in mold release solution, basic mode pattern layer 20 and mold release solution
It reacts and is dissolved in mold release solution, and mask plate film layer 30 ' is not reacted with mold release solution；Wait for that basic mode pattern layer is complete
After being dissolved in mold release solution, mask plate film layer is taken out, that is, obtains mask plate 30, as shown in figure 4, Fig. 4 is using the present invention
The cross section structure schematic diagram for the mask plate that the method for first embodiment is prepared.
When forming mask plate film layer using chemical plating process, chemical plating process does not depend on impressed current, only leans in plating solution
Reducing agent carry out redox reaction.Under the catalytic action of basic mode pattern layer outer surface, the metal ion in plating solution is continuous
It is deposited on basic mode pattern layer outer surface.Since chemical plating process is not influenced by the density of electric fluxline, so, it is deposited on basic mode figure
The thickness of mask plate film layer on pattern layer outer surface is more uniform, and there is no the edges similar to electroforming mask plate to imitate
It answers.The mask plate film layer formed using chemical plating process film layer is dense, porosity is low, while chemical plating also has environmental protection
The characteristics of.Therefore, using the finally formed mask plate of chemical plating process, there is more uniform thickness and better precision, and
And edge effect is not present, and then the precision and evaporation effect of vapor deposition can be improved, improve the quality of oled panel.
In a preferred embodiment, the material of basic mode pattern layer 20 is aluminium, includes nickel ion and iron ion in plating solution,
Mold release solution is sodium hydroxide (NaOH) solution, and the material of the metal mask plate of formation is the alloy for including nickel and iron.Work as metal
When the material of mask plate only includes nickel and iron, then the material of metal mask plate is iron/nickel alloy, i.e. invar alloy.Invar alloy
Characteristic small with the coefficient of expansion, thermal coefficient is low, therefore, the metal mask plate of invar alloy material may further ensure that
The precision of metal mask plate avoids metal mask plate from being deformed during vapor deposition, improves evaporation effect.
Fig. 5 is the dimensional structure diagram of the mask plate of Fig. 4.As can be seen that the metal mask plate packet from Fig. 4 and Fig. 5
The multiple openings 33 for including mask portion 31 and being arranged in mask portion 31 have side protrusion 32, side on 33 neighboring that is open
The width d1 of protrusion 32 is equal with the thickness in mask portion 31.
Fig. 6 is the schematic diagram being deposited using mask plate shown in Fig. 4.Fig. 7 is the enlarged diagram of part A in Fig. 6.?
During vapor deposition, mask plate is by being arranged on the vapor deposition surface for blocking substrate 100 to be deposited on insulated column 102, by pixel circle
The regions OLED 103 that given layer 101 limits are exposed by opening 33.Side protrusion 32 is arranged towards the direction of substrate 100, evaporation
Evaporation material is deposited onto substrate 100 by mask plate for source 200.When there is no side protrusion 32, be open 33 edge and pixel
It is d3 to define the gap between layer, and the vapor deposition shade width on 103 periphery of the regions OLED is B2, as shown in fig. 7, side protrusion 32 is set
Set so that be open 33 edge and pixel defining layer 101 between gap d4 is reduced to by d3, d4 is much smaller compared to d3 so that
The vapor deposition shade width on 103 periphery of the regions OLED is reduced to B1 by B2, and B1 is far smaller than B2, therefore, using the embodiment of the present invention
The mask plate for preparing of method be deposited, side protrusion 32 can stop evaporation material vapor deposition to 32 corresponding pixel circle of side protrusion
In given layer, evaporation material vapor deposition is effectively blocked to adjacent pixel, reduces the mixed color phenomenon of vapor deposition shade and adjacent pixel,
Improve the display quality of oled panel.
Second embodiment：
In the present embodiment, will be using basic mode pattern layer material as colloid, the system of the mask plate is discussed in detail in such as photoresist
Preparation Method.
S11：Basic mode pattern layer is formed in substrate, is provided with multiple hollow-out parts in the basic mode pattern layer, be may include：
One layer of basic mode film is coated on the substrate 10；Basic mode film is exposed and is developed using monotone mask plate,
Complete exposure area is formed in hollow-out parts pattern position, no basic mode film exposes substrate, and unexposed area is formed in other positions
Domain retains basic mode film, forms basic mode pattern layer 20, has multiple hollow-out parts 21 in basic mode pattern layer 20, such as Fig. 2 a and Fig. 2 b
It is shown.Wherein, substrate of glass or quartz substrate may be used in substrate, and the material of basic mode film can be photoresist.It is readily appreciated that
, in order to prepare the mask plate of vapor deposition, hollow-out parts 21 are usually arranged in basic mode pattern layer 20 in array.The material of basement membrane film
Matter can also be other colloidal type materials, as long as basic mode pattern layer can be formed.
S12：Mask plate film layer, the mask plate film layer are formed in the basic mode pattern layer using chemical plating process
It posts on the outer surface of the basic mode pattern layer, may include：
Roughening treatment is carried out to basic mode pattern layer, specially：Roughening treatment is carried out to basic mode pattern layer using roughening process,
In the present embodiment, roughening treatment is carried out to basic mode pattern layer using coarsening solution, a concentration of 180mL/L of sulfuric acid in coarsening solution~
220mL/L, a concentration of 350g/L~450g/L of chromium trioxide, the substrate with basic mode pattern layer is placed into coarsening solution,
The temperature of roughening treatment is 60 DEG C~70 DEG C, and the time is 8min~12min, so that the side of basic mode pattern layer end face and hollow-out parts
Face forms coarse pattern, is conducive to mask plate film layer and posts on the outer surface of basic mode pattern layer.In specific implementation, slightly
The concentration for changing sulfuric acid in liquid can be 200mL/L, and the concentration of chromium trioxide can be 400g/L, and the temperature of roughening treatment is 65
DEG C, time 10min, it is hereby achieved that being preferably roughened effect.Solution understands, other methods can also be used to base
Mould pattern layer carries out roughening treatment, such as mechanical means etc..
Activation process is carried out to basic mode pattern layer outer surface, specially：Using colloid palladium activation method to basic mode pattern layer outside
Surface is activated, and after activation, the outer surface i.e. end of basic mode pattern layer of basic mode pattern layer is adsorbed on using palladium as the colloid of core
On face and the side of hollow-out parts, the periphery of palladium is stannous particle；After being cleaned using cleaning, Bivalent Tin hydrolyzes agglutination
And tightly it is wrapped in the periphery of palladium so that palladium can not play catalytic action.
Dispergation processing, specially：Dispergation processing is carried out to basic mode pattern layer outer surface, to remove the gluey divalent of palladium periphery
Tin plays catalytic action convenient for palladium.
Mask plate film layer is formed in basic mode pattern layer using chemical plating process, specially：It will be after handling above
The substrate with basic mode pattern layer 20 be placed into plating solution, the metal ion in plating solution with the palladium of basic mode pattern layer surface be live
Property center deposition on basic mode pattern layer outer surface, then the metal ion in plating solution again with deposited metallic element be live
Property surface continue to deposit, until the metal ion in plating solution posts on the outer surface of basic mode pattern layer, formed such as Fig. 3 a and figure
Mask plate film layer shown in 3b.
S13：Substrate and basic mode pattern layer are dispelled, mask plate is formed, may include：
By basic mode pattern layer and posts the mask plate film layer in basic mode pattern layer and peel off from the substrate；It is clear using colloid
Washing lotion removes basic mode pattern layer, obtains mask plate.
In this embodiment, it is preferred that colloid material includes photoresist, corresponding colloid cleaning solution cleans for photoresist
Liquid.
3rd embodiment：
Third embodiment of the invention provides a kind of mask plate, as shown in Figure 4.Mask plate includes mask portion 31 and setting
Multiple openings 33 in mask portion 31, are arranged side protrusion 32 on 33 neighboring that is open, the width d1 of side protrusion 32 with cover
The thickness in film portion 31 is equal.
The material of the mask plate of the present embodiment includes nickel and iron, and specifically, the material of mask plate is iron/nickel alloy, i.e., because
Watt alloy.
When being deposited using the mask plate of the embodiment of the present invention, side protrusion is arranged towards band vapor deposition orientation substrate, to,
Side protrusion can stop on evaporation material vapor deposition to the corresponding pixel defining layer in side protrusion, effectively block evaporation material vapor deposition
To adjacent pixel, reduces the mixed color phenomenon of vapor deposition shade and adjacent pixel, improve the display quality of oled panel.
The mask plate of the present embodiment, the method that may be used in above-described embodiment are prepared.
Fourth embodiment：
Inventive concept based on previous embodiment, the embodiment of the present invention additionally provide a kind of evaporated device, the evaporated device
Including the mask plate described in evaporation source and above-described embodiment, mask plate is arranged between evaporation source and substrate to be deposited, mask
The side protrusion of plate is arranged towards orientation substrate to be deposited.
The oled panel prepared using the evaporated device of the present embodiment is improved the precision and display effect of OLED, made
The quality for obtaining oled panel greatly improves.
Although disclosed herein embodiment it is as above, the content only for ease of understanding the present invention and use
Embodiment is not limited to the present invention.Technical staff in any fields of the present invention is taken off not departing from the present invention
Under the premise of the spirit and scope of dew, any modification and variation, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (12)
1. a kind of preparation method of mask plate, which is characterized in that including：
Basic mode pattern layer is formed in substrate, and multiple hollow-out parts are provided in the basic mode pattern layer；
Mask plate film layer is formed in the basic mode pattern layer using chemical plating process, the mask plate film layer is posted in institute
On the outer surface for stating basic mode pattern layer；
The substrate and the basic mode pattern layer are dispelled, mask plate is obtained.
2. preparation method according to claim 1, which is characterized in that described to use chemical plating process in the basic mode pattern
Mask plate film layer is formed on layer, including：
Substrate with basic mode pattern layer is placed into plating solution；
Metal ion deposition in plating solution forms mask plate film layer on the outer surface of the basic mode pattern layer.
3. preparation method according to claim 1, which is characterized in that the material of the basic mode pattern layer is metal, described
The substrate and the basic mode pattern layer are dispelled, mask plate is obtained, including：
The basic mode pattern layer for posting mask plate film layer is removed from the substrate；
The basic mode pattern layer for posting mask plate film layer is placed in mold release solution to dispel the basic mode pattern layer, is obtained
Mask plate.
4. preparation method according to claim 3, which is characterized in that the material of the basic mode pattern layer includes aluminium, described
Mold release solution includes sodium hydroxide solution.
5. preparation method according to claim 1, which is characterized in that the material of the mask plate includes nickel and iron.
6. preparation method according to claim 1, which is characterized in that the material of the basic mode pattern layer includes colloid,
Described to be formed before mask plate film layer in the basic mode pattern layer using chemical plating process, the method further includes：
Roughening treatment is carried out to the basic mode pattern layer；
Activation process is carried out to basic mode pattern layer；
Dispergation processing is carried out to basic mode pattern layer.
7. preparation method according to claim 6, which is characterized in that described to be carried out at roughening to the basic mode pattern layer
Reason, including：Roughening treatment is carried out to the basic mode pattern layer using coarsening solution, a concentration of 180mL/L of sulfuric acid in coarsening solution~
The temperature of 220mL/L, a concentration of 350g/L~450g/L of chromium trioxide, roughening treatment are 60 DEG C~70 DEG C, time 8min
~12min.
8. preparation method according to claim 6, which is characterized in that activation process is carried out to basic mode pattern layer, including：It adopts
Activation process is carried out to basic mode pattern layer with colloid palladium activation method.
9. preparation method according to claim 6, which is characterized in that it is described to dispel substrate and basic mode pattern layer, it is covered
Diaphragm plate, including：
The basic mode pattern layer for posting mask plate film layer is removed from the substrate；
Basic mode pattern layer is removed using colloid cleaning solution, obtains mask plate.
10. preparation method according to claim 6, which is characterized in that the material of the basic mode pattern layer includes photoresist.
11. a kind of mask plate, which is characterized in that described including mask portion and the multiple openings being arranged in the mask portion
Side protrusion is provided on the neighboring of opening.
12. a kind of evaporated device, it is characterised in that including the mask plate described in evaporation source and claim 11, the mask plate
It is arranged between the evaporation source and substrate to be deposited, the side protrusion of the mask plate is arranged towards orientation substrate to be deposited.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109852926A (en) * | 2019-04-01 | 2019-06-07 | 京东方科技集团股份有限公司 | A kind of mask plate and evaporation coating device |
| CN110441940A (en) * | 2019-08-01 | 2019-11-12 | 上海闻泰信息技术有限公司 | Production method, display panel and the display device of display panel |
| CN110993790A (en) * | 2019-11-14 | 2020-04-10 | 武汉华星光电半导体显示技术有限公司 | Metal mask plate and flexible OLED panel |
| CN112921366A (en) * | 2021-01-26 | 2021-06-08 | 京东方科技集团股份有限公司 | Mask plate manufacturing method, mask plate and display device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1392905A (en) * | 2000-09-26 | 2003-01-22 | 伊斯曼柯达公司 | Method for producing metal mask and metal mask |
| CN103205714A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | A metal mask for vapor plating and a production method thereof |
| CN104213072A (en) * | 2013-05-31 | 2014-12-17 | 旭晖应用材料股份有限公司 | Compound shade and making method thereof |
| CN107164788A (en) * | 2017-05-23 | 2017-09-15 | 上海天马有机发光显示技术有限公司 | Mask plate and preparation method thereof |
| CN107365958A (en) * | 2017-07-13 | 2017-11-21 | 上海天马有机发光显示技术有限公司 | The preparation method of metal mask plate |
| CN105154823B (en) * | 2015-09-07 | 2017-12-08 | 信利（惠州）智能显示有限公司 | Mask plate and preparation method thereof is deposited |
| CN107675214A (en) * | 2017-09-14 | 2018-02-09 | 昆山美微电子科技有限公司 | A kind of method that new electromolding alloy technique makes OLED evaporation covers FMM |
-
2018
- 2018-07-26 CN CN201810836194.7A patent/CN108796440A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1392905A (en) * | 2000-09-26 | 2003-01-22 | 伊斯曼柯达公司 | Method for producing metal mask and metal mask |
| CN103205714A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | A metal mask for vapor plating and a production method thereof |
| CN104213072A (en) * | 2013-05-31 | 2014-12-17 | 旭晖应用材料股份有限公司 | Compound shade and making method thereof |
| CN105154823B (en) * | 2015-09-07 | 2017-12-08 | 信利（惠州）智能显示有限公司 | Mask plate and preparation method thereof is deposited |
| CN107164788A (en) * | 2017-05-23 | 2017-09-15 | 上海天马有机发光显示技术有限公司 | Mask plate and preparation method thereof |
| CN107365958A (en) * | 2017-07-13 | 2017-11-21 | 上海天马有机发光显示技术有限公司 | The preparation method of metal mask plate |
| CN107675214A (en) * | 2017-09-14 | 2018-02-09 | 昆山美微电子科技有限公司 | A kind of method that new electromolding alloy technique makes OLED evaporation covers FMM |
Non-Patent Citations (1)
| Title |
|---|
| 岑军健: "《新编非标准设备设计手册 上册》", 31 January 1999, 北京：国防工业出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109852926A (en) * | 2019-04-01 | 2019-06-07 | 京东方科技集团股份有限公司 | A kind of mask plate and evaporation coating device |
| CN110441940A (en) * | 2019-08-01 | 2019-11-12 | 上海闻泰信息技术有限公司 | Production method, display panel and the display device of display panel |
| CN110993790A (en) * | 2019-11-14 | 2020-04-10 | 武汉华星光电半导体显示技术有限公司 | Metal mask plate and flexible OLED panel |
| CN112921366A (en) * | 2021-01-26 | 2021-06-08 | 京东方科技集团股份有限公司 | Mask plate manufacturing method, mask plate and display device |
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