CN108776557A - Flexible sensor and preparation method thereof - Google Patents
Flexible sensor and preparation method thereof Download PDFInfo
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- CN108776557A CN108776557A CN201810889606.3A CN201810889606A CN108776557A CN 108776557 A CN108776557 A CN 108776557A CN 201810889606 A CN201810889606 A CN 201810889606A CN 108776557 A CN108776557 A CN 108776557A
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- insulating layer
- photosensitive insulating
- transfer
- base material
- flexible sensor
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The present invention relates to a kind of flexible sensor and preparation method thereof, flexible sensor includes base material and the first transfer structure.First transfer structure covering is sticked on base material wherein one side, and the first transfer structure includes that covering is sticked the first photosensitive insulating layer on base material and the first electrode layer that is laid on the first photosensitive insulating layer.First electrode layer is that the conductive material being laid on the first photosensitive insulating layer is formed using figure transfer process.Above-mentioned flexible sensor has the first transfer structure due to covering to be sticked on base material, and thinner thickness, flexibility is preferable, can accomplish that 3D bending curve screens, crooked process radius 2.5mm can realize at least 200,000 times bendings through experiment with any angle bending fold；Further, since the first electrode layer of the first transfer structure is directly formed by figure transfer process using conductive material, etch to obtain first electrode layer again without photoresist protection pattern, manufacture craft is relatively simple.
Description
Technical field
The present invention relates to technical field of sensor manufacture, more particularly to a kind of flexible sensor and preparation method thereof.
Background technology
With touch screen industry development, capacitance sensor develops to single layer of conductive structure from multi-layered conductive structure, and capacitance passes
Sensor is more and more thinner.The manufacture of traditional GFF structure sensors is to provide two layers of base material, is laid on every layer of base material
One layer of conductive layer, made on the electrically conductive by exposure imaging etching mode include multiple touch-control sensing points conducting wire knot
Structure, by the stacked cooperation of two layers of base material, finally cover sheet is installed in fitting on conductive line structure.However, traditional GFF structures
Sensor thickness is thicker, causes bending resistance poor.
Invention content
Based on this, it is necessary to overcome the deficiencies of existing technologies, provide a kind of flexible sensor and preparation method thereof, it can be carried
High product flexibility, and simple for process and product cost is relatively low.
Its technical solution is as follows：A kind of flexible sensor, including：Base material and the first transfer structure, the first transfer knot
Structure covering is sticked on the base material wherein one side, the first transfer structure include covering be sticked on the substrate the
One photosensitive insulating layer and the first electrode layer being laid on first photosensitive insulating layer, the first electrode layer are described the
The first conductive material being laid on one photosensitive insulating layer is formed using figure transfer process.
A kind of production method of flexible sensor, includes the following steps：Base material and the first transfer film are provided, wherein first turn
Die includes the first photosensitive insulating layer and the first conductive material for being laid on first photosensitive insulating layer surface；By first turn
The first photosensitive insulating layer covering of die is sticked in the wherein one side of base material；Place is exposed successively to the first photosensitive insulating layer
Reason, development treatment and curing process obtain first electrode layer.
Above-mentioned flexible sensor and preparation method thereof has the first transfer structure, thickness due to covering to be sticked on base material
Relatively thin, flexibility is preferable, can have good bending special by the flexible sensor that processing obtains with any angle bending fold
Property, 3D bending curve screens can be made, crooked process radius 2.5mm can realize at least 200,000 times bendings through experiment；Further, since first
The first electrode layer for transferring structure is directly formed by figure transfer process using photosensitive insulating materials, without photoresist
Protection pattern etches to obtain first electrode layer again, and manufacture craft is relatively simple, and production efficiency is higher.
The flexible sensor further includes the second transfer structure in one of the embodiments, the second transfer knot
Structure covering is sticked on the another side of the base material, the second transfer structure include covering be sticked on the substrate the
Two photosensitive insulating layers and the second electrode lay being laid on second photosensitive insulating layer, the second electrode lay are described the
The second conductive material being laid on two photosensitive insulating layers is formed using figure transfer process.
The flexible sensor further includes the second transfer structure in one of the embodiments, the second transfer knot
Structure covering is sticked in the first transfer structure, and the second transfer structure includes that covering is sticked in the first transfer structure
On the second photosensitive insulating layer and the second electrode lay that is laid on second photosensitive insulating layer, the second electrode lay be
The second conductive material being laid on second photosensitive insulating layer is formed using figure transfer process.
The flexible sensor further includes third electrode layer in one of the embodiments, and the third electrode layer is set
It sets on the another side of the base material, the third electrode layer is that the third conductive material being laid on base material uses exposure imaging
Etch process is formed.
The flexible sensor further includes third electrode layer in one of the embodiments, and the third electrode layer is set
It sets between the base material and the first transfer structure, the third electrode layer is that the third conductive material being laid on base material is adopted
It is formed with exposure imaging etch process.
In one of the embodiments, the base material be polyethylene terephthalate (PET), polyimides (PI),
The common base material such as makrolon (PC), cyclic olefin polymer (COP, COC), polymethyl methacrylate (PMMA) or very
Polyvinyl chloride (PVC), polypropylene (PP), polystyrene (PS) base material；First photosensitive insulating layer is polyvinyl alcohol, gathers
The polymer that at least one of ester, nylon, acrylate, epoxy and polyurethane group is grouped as；The first electrode layer is to receive
Meter Yin Si, graphene or carbon nanotube.
The thickness of the first transfer structure is less than 200um in one of the embodiments,.
Further include in one of the embodiments, step before obtaining the first electrode layer step：There is provided second turn
Die, second transfer film include the second photosensitive insulating layer and the second conduction material for being laid on the second photosensitive insulating layer surface
Material；Further include step after obtaining first electrode layer step：The second photosensitive insulating layer covering of second transfer film is sticked
In the first electrode layer；Processing, development treatment and curing process are exposed successively to the second photosensitive insulating layer material to obtain
The second electrode lay.
The production method of the flexible sensor further includes following steps in one of the embodiments,：
Second transfer film is provided, second transfer film include the second photosensitive insulating layer and be laid on described second it is photosensitive absolutely
The second conductive material on edge layer surface；
The second photosensitive insulating layer covering of second transfer film is sticked in the another side of base material；
Processing, development treatment and curing process are exposed successively to second photosensitive insulating layer and obtain second electrode
Layer.
The production method of the flexible sensor further includes following steps in one of the embodiments,：
Plating forms third conductive material on the another side of base material；
It carries out patch dry film process, exposure-processed, development treatment, etching process successively on third conductive material and takes off
Film process obtains third electrode layer.
In one of the embodiments, base material is being fitted to after base material step is provided and covering the first transfer film
Further include following steps before step：
It is first electroplated on the side that base material is used to be sticked the first transfer film and forms third conductive material；
Then carried out successively on third conductive material patch dry film process, exposure-processed, development treatment, etching process, with
And it takes off film process and obtains third electrode layer.
In one of the embodiments, by the first transfer film under default transfer temperature, with default transfer pressure covering patch
It is located on base material；Wherein, the default transfer temperature is 50 DEG C~140 DEG C, and the default transfer pressure is 0.1Mpa~5Mpa.
The production method of the flexible sensor further includes following steps in one of the embodiments,：
Processing is exposed using the second photosensitive insulating layer of default exposure energy pair, is felt using default solidification energy pair second
Light insulating layer carries out curing process；Wherein, it is 20mj/cm to preset exposure energy2~1000mj/cm2, default solidification energy is
200mj/cm2~2000mj/cm2。
The production method of the flexible sensor further includes following steps in one of the embodiments,：
Number to the exposure-processed of first photosensitive insulating layer is more than twice；It is preceding twice in succession in exposure-processed
The exposure energy that the first photosensitive insulating layer uses is less than in single exposure processing photosensitive to first exhausted in a rear exposure-processed
The exposure energy that edge layer uses；And single exposure before being covered to the exposure area of the first photosensitive insulating layer in a rear exposure-processed
To the exposure area of the first photosensitive insulating layer in processing.
Description of the drawings
Fig. 1 is the structural schematic diagram of the flexible sensor described in one embodiment of the invention；
Fig. 2 is the structural schematic diagram of the flexible sensor described in another embodiment of the present invention；
Fig. 3 is the structural schematic diagram of the flexible sensor described in further embodiment of this invention；
Fig. 4 is the structural schematic diagram of the flexible sensor described in yet another embodiment of the invention；
Fig. 5 is the structural schematic diagram of the flexible sensor described in yet another embodiment of the present invention.
Reference numeral：
10, base material, the 20, first transfer structure, the 21, first photosensitive insulating layer, the 22, first electrode layer, 30, second transfer knot
Structure, the 31, second photosensitive insulating layer, 32, the second electrode lay, 40, third electrode layer.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific implementation mode be described in detail.Many details are elaborated in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case of violating intension of the present invention, therefore the present invention is not limited by following public specific embodiment.
In the description of the present invention, it is to be understood that, term " first ", " second " are used for description purposes only, and cannot
It is interpreted as indicating or implies relative importance or implicitly indicate the quantity of indicated technical characteristic.Define as a result, " the
One ", the feature of " second " can explicitly or implicitly include at least one of the features.In the description of the present invention, " multiple "
It is meant that at least two, such as two, three etc., unless otherwise specifically defined.
It in the description of the present invention, it is to be understood that, can be with when an element is considered as " connection " another element
It is directly to another element or may be simultaneously present intermediary element.On the contrary, when element be referred to as " direct " with it is another
When element connects, intermediary element is not present.
In one embodiment, referring to Fig. 1, a kind of flexible sensor, including：Base material 10 and first transfers structure 20.
The first transfer covering of structure 20 is sticked on the wherein one side of the base material 10, and the first transfer structure 20 includes covering
Be sticked the first photosensitive insulating layer 21 on the base material 10 and be laid on first photosensitive insulating layer 21 first electricity
Pole layer 22.The first electrode layer 22 is that the first conductive material being laid on first photosensitive insulating layer 21 uses pattern transfer
Technique is formed.
Above-mentioned flexible sensor has the first transfer structure 20, thinner thickness flexible due to covering to be sticked on base material 10
Property it is preferable, can have good bending characteristic by the flexible sensor that processing obtains with any angle bending fold, can accomplish
3D bending curve screens, crooked process radius 2.5mm can realize at least 200,000 times bendings through experiment；Further, since the first transfer structure
20 first electrode layer 21 is directly formed by figure transfer process using insulating materials, and pattern is protected without photoresist
It etches to obtain first electrode layer 22 again, manufacture craft is relatively simple, and production efficiency is higher.
In addition, flexible sensor further includes the frame circuit being arranged in base material frame.Photoetching work is passed through to the frame of base material
Skill, laser technology or printed conductive material mode so that the first transfer structure is electrically connected with frame circuit.
In one embodiment, referring to Fig. 2, the flexible sensor further includes the second transfer structure 30.Described
The two transfer coverings of structure 30 are sticked on the another side of the base material 10, and the second transfer structure 30 includes that covering is sticked
The second photosensitive insulating layer 31 on the base material 10 and the second electrode lay 32 being laid on second photosensitive insulating layer 31.
The second electrode lay 32 is that the second conductive material being laid on second photosensitive insulating layer 31 uses figure transfer process shape
At.In this way, the first electrode layer 22 in the first transfer structure 20 can be used as emitter, the second electrode in the second transfer structure 30
Layer 32 can be used as receiving pole, have bilayer conductive layer in this way, and touch-control better performances, interference free performance is preferable, and with good
Bend characteristic.
In another embodiment, referring to Fig. 3, the flexible sensor further includes the second transfer structure 30.It is described
The second transfer covering of structure 30 is sticked in the first transfer structure 20, and the second transfer structure 30 includes that covering is sticked
It is described first transfer structure 20 on the second photosensitive insulating layer 31 and be laid on second photosensitive insulating layer 31 second
Electrode layer 32.The second electrode lay 32 is that the second conductive material being laid on the second photosensitive insulating layer 31 uses pattern transfer work
Skill is formed.In this way, the first electrode layer 22 in the first transfer structure 20 can be used as emitter, second transfers second in structure 30
Electrode layer 32 can be used as receiving pole, have bilayer conductive layer in this way, and touch-control better performances, interference free performance is preferable, and with good
Good bending characteristic.
In yet another embodiment, referring to Fig. 4, the flexible sensor further includes third electrode layer 40.Described
Three electrode layers 40 are arranged on the another side of the base material 10, and the third electrode layer 40 is that the third being laid on base material 10 is led
Electric material is formed using exposure imaging etch process.In this way, the first electrode layer 22 in the first transfer structure 20 can be used as transmitting
Pole, third electrode layer 40 can be used as receiving pole, have bilayer conductive layer in this way, and touch-control better performances, interference free performance is preferable, and
With good bending characteristic.Third conductive material can be specifically ITO, silver, nano silver, copper, graphene, carbon nanotube or
PEDOT。
In a further embodiment, referring to Fig. 5, the flexible sensor further includes third electrode layer 40.Described
For the setting of three electrode layers 40 between the base material 10 and the first transfer structure 20, the third electrode layer 40 is on base material 10
The third conductive material of laying is formed using exposure imaging etch process.In this way, the first electrode layer in the first transfer structure 20
22 can be used as emitter, and third electrode layer 40 can be used as receiving pole, and there is bilayer conductive layer, touch-control better performances to resist dry in this way
Better performances are disturbed, and there is good bending characteristic.
In one embodiment, the base material 10 is polyethylene terephthalate (PET), polyimides (PI), gathers
The common base material such as carbonic ester (PC), cyclic olefin polymer (COP, COC), polymethyl methacrylate (PMMA) is non-common
Polyvinyl chloride (PVC), polypropylene (PP), polystyrene (PS) base material.First photosensitive insulating layer 21 is polyvinyl alcohol, gathers
The polymer that at least one of ester, nylon, acrylate, epoxy and polyurethane group is grouped as；The first electrode layer 22 is
Silver nanowire, graphene or carbon nanotube.It may be used in addition, base material 10, first transfers the transfer of structure 20, second structure 30
Transparent material or opaque material when being manufactured using transparent material, when being attached on touch screen front, do not influence touch screen
Display effect.
In one embodiment, the thickness of the first transfer structure 20 is less than 200um.Specifically, the first transfer structure
20 thickness is 5um to 50um.Similarly, the thickness of the second transfer structure 30 is 5um to 50um.In this way, flexible sensor is thick
Spend relatively thin, flexibility is preferable, can have good bending by the flexible sensor that processing obtains with any angle bending fold
Characteristic can accomplish 3D bending curve screens, crooked process radius 2.5mm.
In one embodiment, a kind of production method of flexible sensor, includes the following steps：
Step S100, base material 10 and the first transfer film are provided, wherein the first transfer film include the first photosensitive insulating layer 21 and
The first conductive material being laid on 21 surface of the first photosensitive insulating layer；
Before the use, be sticked the first transfer film provided matcoveredn on two sides, can be to the by protective layer
One transfer film is protected, and avoids damaging, when being subsequently sticked to 10 step of base material just by the guarantor on the first transfer film two sides
Sheath is torn.
Step S200, the covering of the first photosensitive insulating layer 21 of the first transfer film is sticked in the wherein one side of base material 10；
Step S300, processing, development treatment and curing process are exposed successively to the first photosensitive insulating layer and obtain
One electrode layer 22, just can so obtain flexible sensor as shown in Figure 1.
The production method of above-mentioned flexible sensor is identical as the technique effect of above-mentioned flexible sensor, without repeating.
In one embodiment, further include step before obtaining 22 step of the first electrode layer：
The second transfer film is provided, second transfer film includes the second photosensitive insulating layer 31 and is laid on the second photosensitive insulation
The second conductive material on 31 surface of layer；
Before the use, be also sticked second transfer film matcoveredn on two sides, can be to second turn by protective layer
Die is protected, and avoids damaging, when being subsequently sticked to the first transfer film step just by the guarantor on the second transfer film two sides
Sheath is torn.
Further include step after obtaining 22 step of first electrode layer：
The second photosensitive insulating layer 31 covering of second transfer film is sticked in the first electrode layer 22；
Processing, development treatment and curing process are exposed successively to the second photosensitive insulating layer 31 and obtain the second electrode lay
32。
In this way, flexible sensor as shown in Figure 2 just can be obtained.
In one embodiment, the production method of the flexible sensor further includes following steps：
There is provided the second transfer film, second transfer film includes the second photosensitive insulating layer 31 and to be laid on described second photosensitive
The second conductive material on 31 surface of insulating layer；
The second photosensitive insulating layer 31 covering of second transfer film is sticked in the another side of base material 10；
Processing, development treatment and curing process are exposed successively to second photosensitive insulating layer 31 and obtain the second electricity
Pole layer 32.
In this way, flexible sensor as shown in Figure 3 just can be obtained.
In one embodiment, the production method of the flexible sensor further includes following steps：
Plating forms layers of copper on the another side of base material 10；
It carries out patch dry film process, exposure-processed, development treatment, etching process successively in layers of copper and takes off film process and obtain
To third electrode layer 40.
In this way, flexible sensor as shown in Figure 4 just can be obtained.
In one embodiment, base material 10 is being fitted to after 10 step of base material is provided and covering the first transfer film
Further include following steps before step：
It is first electroplated on the side that base material 10 is used to be sticked the first transfer film and forms layers of copper；
Then patch dry film process, exposure-processed, development treatment, etching process are carried out successively in layers of copper and is taken off at film
Reason obtains third electrode layer 40.
In this way, flexible sensor as shown in Figure 5 just can be obtained.
In one embodiment, the first transfer film is sticked under default transfer temperature, with default transfer pressure covering
On base material 10；Wherein, the default transfer temperature is 50 DEG C~140 DEG C, and the default transfer pressure is 0.1Mpa~5Mpa.Such as
This enables to the first transfer film to be preferably fitted on base material 10, and product quality is preferable.Furthermore, it is possible to take pre-set velocity
The covering of the first transfer film is fitted on base material 10 for 0.5m/min~4m/min.The manufacture craft of second transfer film is similar to the
The manufacture craft of one transfer film, without repeating.
In one embodiment, the production method of the flexible sensor further includes following steps：
Processing is exposed using the second photosensitive insulating layer of default exposure energy pair 31, using default solidification energy pair second
Photosensitive insulating layer 31 carries out curing process；Wherein, it is 20mj/cm to preset exposure energy2~1000mj/cm2, preset solidification energy
For 200mj/cm2~2000mj/cm2。
In one embodiment, the production method of the flexible sensor further includes following steps：
Number to the exposure-processed of first photosensitive insulating layer is more than twice；It is preceding twice in succession in exposure-processed
The exposure energy that the first photosensitive insulating layer uses is more than in single exposure processing photosensitive to first exhausted in a rear exposure-processed
The exposure energy that edge layer uses；And single exposure before being covered to the exposure area of the first photosensitive insulating layer in a rear exposure-processed
To the exposure area of the first photosensitive insulating layer in processing.For example, the preceding exposure energy that once the first photosensitive insulating layer is used for
200mj/cm2, the preceding exposure energy once used to the first photosensitive insulating layer is 300mj/cm2Or 350mj/cm2.Specifically,
Afterwards in an exposure-processed to the exposure area of the first photosensitive insulating layer relative in a preceding exposure-processed it is photosensitive to first absolutely
The exposure area of edge layer, a rear exposure area can to the periphery expand on the basis of a preceding exposure area 100um~
200um can so ensure preferable exposure effect, and 22 mass of first electrode layer produced is preferable.
Similarly, the exposure-processed mode of second photosensitive insulating layer is similar to and first photosensitive insulating layer is exposed
Light processing mode, herein without repeating.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (15)
1. a kind of flexible sensor, which is characterized in that including：Base material and the first transfer structure, the first transfer structure covering
It is sticked on the base material wherein one side, the first transfer structure includes that covering is sticked on the substrate first photosensitive
Insulating layer and the first electrode layer being laid on first photosensitive insulating layer, the first electrode layer are described first photosensitive
The first conductive material being laid on insulating layer is formed using figure transfer process.
2. flexible sensor according to claim 1, which is characterized in that further include the second transfer structure, described second turn
Print structure covering is sticked on the another side of the base material, and the second transfer structure includes that covering is sticked on the substrate
The second photosensitive insulating layer and the second electrode lay that is laid on second photosensitive insulating layer, the second electrode lay is institute
The second conductive material being laid on the second photosensitive insulating layer is stated to be formed using figure transfer process.
3. flexible sensor according to claim 1, which is characterized in that further include the second transfer structure, described second turn
Print structure covering is sticked in the first transfer structure, and the second transfer structure includes that covering is sticked in first transfer
The second photosensitive insulating layer in structure and the second electrode lay being laid on second photosensitive insulating layer, the second electrode
Layer is that the second conductive material being laid on the second photosensitive insulating layer is formed using figure transfer process.
4. flexible sensor according to claim 1, which is characterized in that further include third electrode layer, the third electrode
Layer is arranged on the another side of the base material, and the third electrode layer is that the third conductive material being laid on base material uses exposure
Development etch process is formed.
5. flexible sensor according to claim 1, which is characterized in that further include third electrode layer, the third electrode
Between the base material and the first transfer structure, the third electrode layer is the third conduction material being laid on base material for layer setting
Material is formed using exposure imaging etch process.
6. flexible sensor according to claim 1, which is characterized in that the base material is polyethylene terephthalate
(PET), polyimides (PI), makrolon (PC), cyclic olefin polymer (COP, COC), polymethyl methacrylate (PMMA)
Etc. common base material or non-common polyvinyl chloride (PVC), polypropylene (PP), polystyrene (PS) base material；First sense
Light insulating layer is the polymerization that at least one of polyvinyl alcohol, polyester, nylon, acrylate, epoxy and polyurethane group is grouped as
Object；The first electrode layer is silver nanowire, graphene or carbon nanotube.
7. according to the flexible sensor described in claim 1 to 6 any one, which is characterized in that the first transfer structure
Thickness is less than 200um.
8. a kind of production method of flexible sensor, which is characterized in that include the following steps：
Base material and the first transfer film are provided, wherein the first transfer film including the first photosensitive insulating layer with to be laid on described first photosensitive
The first conductive material on surface of insulating layer；
The first photosensitive insulating layer covering of first transfer film is sticked in the wherein one side of base material；
Processing, development treatment and curing process are exposed successively to the first photosensitive insulating layer and obtain first electrode layer.
9. the production method of flexible sensor according to claim 8, which is characterized in that obtaining the first electrode layer
Further include step before step：
The second transfer film is provided, second transfer film includes the second photosensitive insulating layer and is laid on the second photosensitive insulating layer surface
On the second conductive material；
Further include step after obtaining first electrode layer step：
The second photosensitive insulating layer covering of second transfer film is sticked in the first electrode layer；
Processing, development treatment and curing process are exposed successively to the second photosensitive insulating layer material and obtain the second electrode lay.
10. the production method of flexible sensor according to claim 8, which is characterized in that further include following steps：
The second transfer film is provided, second transfer film includes the second photosensitive insulating layer and is laid on second photosensitive insulating layer
The second conductive material on surface；
The second photosensitive insulating layer covering of second transfer film is sticked in the another side of base material；
Processing, development treatment and curing process are exposed successively to second photosensitive insulating layer and obtain the second electrode lay.
11. the production method of flexible sensor according to claim 8, which is characterized in that further include following steps：
On the another side of base material plating formed third conductive material ITO, silver, nano silver, copper, graphene, carbon nanotube,
The conductive layers such as PEDOT；
It carries out patch dry film process, exposure-processed, development treatment, etching process successively on third conductive material and takes off at film
Reason obtains third electrode layer.
12. the production method of flexible sensor according to claim 8, which is characterized in that after providing base material step
And by the first transfer film covering fit to base material step before further include following steps：
It is first electroplated on the side that base material is used to be sticked the first transfer film and forms third conductive material；
Then patch dry film process, exposure-processed, development treatment, etching process are carried out successively on third conductive material and is taken off
Film process obtains third electrode layer.
13. the production method of flexible sensor according to claim 8, which is characterized in that by the first transfer film default
It is sticked on base material under transfer temperature, with default transfer pressure covering；Wherein, the default transfer temperature is 50 DEG C~140 DEG C,
The default transfer pressure is 0.1Mpa~5Mpa.
14. the production method of flexible sensor according to claim 8, which is characterized in that further include following steps：
Processing is exposed using the second photosensitive insulating layer of default exposure energy pair, it is photosensitive absolutely using default solidification energy pair second
Edge layer carries out curing process；Wherein, it is 20mj/cm to preset exposure energy2~1000mj/cm2, it is 200mj/ to preset solidification energy
cm2~2000mj/cm2。
15. the production method of flexible sensor according to claim 8, which is characterized in that further include following steps：
Number to the exposure-processed of first photosensitive insulating layer is more than twice；It is preceding primary twice in succession in exposure-processed
The exposure energy that the first photosensitive insulating layer uses is less than in a rear exposure-processed to the first photosensitive insulating layer in exposure-processed
The exposure energy of use；And a preceding exposure-processed is covered to the exposure area of the first photosensitive insulating layer in a rear exposure-processed
In to the exposure area of the first photosensitive insulating layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114839398A (en) * | 2022-04-27 | 2022-08-02 | 东南大学 | Capacitive flexible acceleration sensor and preparation method thereof |
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