CN108774727A - A kind of multi sphere ion etching plated film set composite - Google Patents
A kind of multi sphere ion etching plated film set composite Download PDFInfo
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- CN108774727A CN108774727A CN201810884500.4A CN201810884500A CN108774727A CN 108774727 A CN108774727 A CN 108774727A CN 201810884500 A CN201810884500 A CN 201810884500A CN 108774727 A CN108774727 A CN 108774727A
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- vacuum chamber
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- plated film
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- ion etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
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- ing And Chemical Polishing (AREA)
Abstract
The present invention provides a kind of multi sphere ion etching plated film set composites, it includes vacuum chamber, the vacuum chamber is confined space, and offer air inlet and exhaust outlet on the vacuum chamber, Zhu Hu mechanisms are provided in the vacuum chamber, circular arc mechanism, Workpiece carrier and heating member, Zhu Hu mechanisms include column arc target and the first striking needle, a large amount of electronics Ar gas indoor to vacuum chamber is generated by the first arc power using column arc target and the touching of the first striking needle and carries out a large amount of Ar cations of ionization generation to the comprehensive uniform etching of workpiece progress on Workpiece carrier, solve the technical issues of workpiece can not be etched uniformly comprehensively, realize that the Zhu Hu mechanisms of etching and circular arc mechanism can carry out vacuum coating again simultaneously, perfect in shape and function.
Description
Technical field
The present invention relates to technical field of vacuum plating, specially a kind of multi sphere ion etching plated film set composite.
Background technology
Before carrying out vacuum coating to workpiece in vacuum chamber, the miscellaneous gas and water gas and oxygen that remove workpiece surface are needed
The impurity etc. of change, which is referred to as to etch, and conventional vacuum coating equipment is typically to utilize heating element to vacuum chamber
It is heated, inputs the Ar gas of 2~6bar in vacuum chamber later, then by loading the inclined of 600~1000V to vacuum chamber
Voltage is set, the indoor Ar of vacuum chamber is made to ionize to form Ar cations and electronics, the surface of workpiece is hit using Ar cations
It hits, removes the impurity of workpiece surface, but aforesaid way is be easy to cause since the bias voltage of load is excessively high in vacuum chamber
The phenomenon that generating sparking injures workpiece, and since the Ar tolerance of input is excessive, and Ar ionization levels are not high, can not remove workpiece table
The oxidation impurities in face can only carry out the miscellaneous gas of workpiece surface with aqueous vapor it is even more impossible to be performed etching to gully present in workpiece
Cleaning.
Also a kind of mode is to rob a kind of ion source using similar ion, and to launching electronics in vacuum chamber, electronics exists
Ar gas indoor to vacuum chamber is hit during traveling, so that Ar gas is generated Ar cations and is formed beam-plasma, utilizes Ar
The beam-plasma that cation is formed bombards the surface of workpiece, but which can not make a large amount of ionizations of Ar gas, it is necessary to logical
Setting impressed current anode is crossed, electronics is accelerated using impressed current anode, increases the ionization level of Ar gas, but the cathode of ion source is adopted
It uses tungsten pipe or tantalum pipe as cathode, once electric current is excessive, will blow, the electron amount of generation is limited, can not generate big face
A little performing etching on Ar cation bunched pair workpiece can only be removed the oxide on workpiece by long-pending ionization Ar cations
With other impurities.
In the patent of invention of Patent No. CN200910083508.1, a kind of multifunctional ion beam sputtering deposition is disclosed
With etching apparatus, including：One vacuum chamber；One sputtering sedimentation and etching work stage, are set to the top center of the vacuum chamber
Position, lower surface are parallel with horizontal plane；One etching ion source, is set to the bottom center position of the vacuum chamber, with sputtering
Deposition is opposite with etching work stage；Two sputtering target platforms are set to the lower part of the vacuum chamber, symmetrical in the etching ion source
Direction where the ion beam of transmitting；Two plasma sputter sources, are set to the middle part of the vacuum chamber, it is symmetrical in the etching from
The target material surface loaded on direction where the ion beam of component transmitting, the ion beam of transmitting and sputtering target platform is at 45 DEG C
Angle；One auxiliary cleaning ion source is set to the middle part of the vacuum chamber, the ion beam of transmitting and the sputtering sedimentation and etching workpiece
Platform lower surface is at 30 DEG C of angles.The equipment has both various functions, and the sputtering sedimentation etching polishing that can be used for medium and metal material subtracts
Thin and heat treatment.
Above-mentioned patent be exactly using ion source generate electronics Ar is ionized, by Ar cations carry out boundling after to workpiece
It performs etching, but since ion source generation amount of electrons is few, an etching can only be carried out, comprehensive uniform quarter can not be carried out
Erosion.
Invention content
In view of the above problems, the present invention provides a kind of multi sphere ion etching plated film set composite, using column arc target with
The touching of first striking needle generates a large amount of electronics Ar gas indoor to vacuum chamber by the first arc power and carries out ionization generation largely
Ar cations uniform etching comprehensively is carried out to the workpiece on Workpiece carrier, solve the technology that workpiece can not be etched uniformly comprehensively
Problem, while realizing that the Zhu Hu mechanisms of etching and circular arc mechanism can carry out vacuum coating, perfect in shape and function again.
To achieve the above object, a kind of multi sphere ion etching plated film set composite, including vacuum chamber, the vacuum chamber be
Confined space, and air inlet and exhaust outlet are offered on the vacuum chamber, further include：
Zhu Hu mechanisms, the Zhu Hu mechanisms are set to any side in the vacuum chamber transverse direction comprising are set to
The indoor cylindricality target of vacuum chamber is set to the revolving part for driving the rotation of columnar target material outside the vacuum chamber, is set to
Cylindricality target side can rotate the first striking needle of touching with the cylindricality target, and circular cowling is set to the cylindricality target and the
Protective cover outside one striking needle, the protective cover open up jagged, are provided between the cylindricality target and the first striking needle
First arc power, the cathode of first arc power are connect with the cylindricality target, and anode connects the first striking needle and institute
State the lateral wall of vacuum chamber；
Circular arc mechanism, the circular arc mechanism are at least one, are set to the vacuum chamber of Zhu Hu mechanisms offside
On the inner wall of room, it is provided with anode supply between the cylindricality target, the cathode of the anode supply and the cylindricality target
Connection, anode are connect with the circular arc mechanism；
Workpiece carrier, the Workpiece carrier are set between the Zhu Hu mechanisms and the circular arc mechanism, rotary setting
In in the vacuum chamber, and it is connected with bias supply between the outer wall of the vacuum chamber, the bias supply
Cathode is connect with the Workpiece carrier, and anode is connect with the outer wall of the vacuum chamber；And
Heating member, at least one heating member are set in the vacuum chamber, and it is vertical to be set to the vacuum chamber
On the side wall of upward any side.
As an improvement, the Zhu Hu mechanisms further include：
Circulating cooling connector, the circulating cooling connector are set to the top of the cylindricality target, and be arranged side by side has thereon
Inlet and liquid outlet；And
Resistance unit, the resistance unit are set on the circuit that the first striking needle is connect with the first arc power.
As an improvement, U-shaped coolant flow channel is provided in the cylindricality target, one end of the coolant flow channel and the feed liquor
Mouth connection, the other end are connect with the liquid outlet.
As an improvement, be connected with rotary power part at the top of the first striking needle, the rotary power part with it is described
The outer wall of vacuum chamber is fixedly connected.
As an improvement, the protective cover with the vacuum chamber be rotatablely connected, inner wall be equipped with ratchet, the ratchet with
The pawl connected on the first striking needle stirs cooperation.
As an improvement, the pawl often coordinates with the ratchet stirs primary, 180 ° of the protective cover rotation.
As an improvement, the circular arc mechanism includes：
Circular target, the circular target are fixedly installed on the inner wall of the vacuum chamber, with the anode supply
Connection；
Second striking needle, the flexible side for being set to the circular target of the second striking needle, and itself and the circle
Target can touch setting；
Second arc power, second arc power are set between the circular target and the vacuum chamber, cathode
It is connected with the circular target, and its anode is connected with the lateral wall of the vacuum chamber.
As an improvement, being provided with the first power switch on the circuit that the circular target is connect with the anode supply.
As an improvement, being provided with second source switch on the circuit that the circular target is connect with second arc power.
As an improvement, the heating member is arranged symmetrically, it is symmetrically disposed on the both sides of the Workpiece carrier.
The beneficial effects of the present invention are：
(1) present invention applies high current by the first arc power by using column arc target and the touching of the first striking needle and generates
A large amount of electronics Ar gas indoor to vacuum chamber carries out ionization and generates a large amount of Ar cations to the workpiece progress on Workpiece carrier
Uniform etching comprehensively, realizes the technical issues of workpiece uniformly etches comprehensively, while realizing the Zhu Hu mechanisms and circular arc machine of etching
Structure can carry out vacuum coating, perfect in shape and function again；
(2) present invention can utilize low-voltage to can be achieved with the ionization of Ar gases in vacuum chamber, ionize out Ar cations
Collision etching is carried out to workpiece, application high voltage power supply is avoided and Ar gas is ionized, and then avoid the voltage mistake of high voltage power supply
The workpiece sparking that height is brought, damages workpiece；
(3) present invention by can also effectively avoid bias supply it is excessively high bring at sharp workpiece tip generate
Point effect, i.e. high-voltage arc can as lightning is as lightning rod, to tip at assemble, cause to assemble at workpiece tip excessive
Electric arc damages workpiece；
(4) present invention can not only remove miscellaneous gas and water gas and the oxidation of workpiece surface by Ar positive ion bombardment workpiece surfaces
Substance, and since the amount of electrons that it is ionized out is more, it is possible to reduce the amount for the Ar gas being passed through, can obtain a large amount of Ar just from
Therefore son reduces blocking of the Ar gas atoms to Ar cations, can carry out shock removal to the impurity in workpiece gully；
(5) the Zhu Hu mechanisms in the present invention accelerate as electronic generator, circular arc mechanism as electronics when performing etching
Device, and when carrying out vacuum coating, plated film target is can be used as, the atom pair workpiece surface for generating plated film carries out at plated film
Reason, it is vdiverse in function, comprehensively.
In conclusion the present invention has many advantages, such as that safe, vdiverse in function, etching homogeneity is good, it is particularly suitable for Vacuum Deposition
Technical field of membrane.
Description of the drawings
Fig. 1 is the longitudinal schematic cross-sectional view of the present invention；
Fig. 2 is the lateral schematic cross-sectional view of the present invention；
Fig. 3 is Zhu Hu mechanisms of the present invention dimensional structure diagram；
Fig. 4 is column arc target schematic cross-sectional view of the present invention；
Fig. 5 is Zhu Hu mechanisms of the present invention partial structural diagram；
Fig. 6 is column arc target electron transfer status diagram of the present invention；
Fig. 7 is that column arc target of the present invention discharges plated film target status diagram with circular target；
Fig. 8 is that column arc device vacuum of the present invention etches aura intensity；
Fig. 9 is the aura intensity of traditional vacuum etching apparatus；
Figure 10 is that conventional workpiece vacuum etches status diagram；
Figure 11 is that workpiece vacuum of the present invention etches status diagram.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, do not indicate or imply the indicated equipment or element must have a particular orientation, with spy
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
Embodiment 1：
As shown in Figure 1, Figure 2 as shown in figure 3, a kind of multi sphere ion etching plated film set composite, including vacuum chamber 1, the vacuum
Chamber 1 is confined space, and offers air inlet 11 and exhaust outlet 12 on the vacuum chamber 1, further includes：
Zhu Hu mechanisms 2, the Zhu Hu mechanisms 2 are set to any side in 1 transverse direction of the vacuum chamber comprising setting
In the cylindricality target 20 in the vacuum chamber 1, it is set to the revolving part that 20 rotation of columnar target material is driven outside the vacuum chamber 1
21, the first striking needle 23 of touching can be rotated with the cylindricality target 20 by being set to 20 side of cylindricality target, and circular cowling is set to
Protective cover 24 outside 20 and first striking needle 23 of the cylindricality target, the protective cover 24 open up jagged 241, the cylindricality target
The first arc power 25, the cathode of first arc power 25 and the cylindricality target are provided between 20 and the first striking needle 23
Connection, anode connect the lateral wall of the first striking needle 23 and the vacuum chamber 1；
Circular arc mechanism 3, the circular arc mechanism 3 are at least one, are set to the vacuum of 2 offside of Zhu Hu mechanisms
On the inner wall of chamber 1, anode supply 30 is provided between the cylindricality target 20, the cathode of the anode supply 30 with it is described
Cylindricality target 20 connects, and anode is connect with the circular arc mechanism 3；
Workpiece carrier 4, the Workpiece carrier 4 are set between the Zhu Hu mechanisms 2 and the circular arc mechanism 3, rotation
It is set in the vacuum chamber 1, and it is connected with bias supply 40 between the outer wall of the vacuum chamber 1, this is partially
The cathode for setting power supply 40 is connect with the Workpiece carrier 4, and anode is connect with the outer wall of the vacuum chamber 1；And
Heating member 5, at least one heating member 5 are set in the vacuum chamber 1, are set to the vacuum chamber
On the side wall of 1 longitudinal any side.
It should be noted that in the course of work of ion etching, the cylindricality target 20 in Zhu Hu mechanisms 2 and the first striking
The touching of needle 23 forms electric arc and carries out ionization generation aura to the Ar gases in vacuum chamber 1, and circular arc mechanism 3 at this time is as auxiliary
Supporing yang pole use carries out being oriented to traction and add to the electronics that cylindricality target 20 and the touching of the first striking needle 23 are formed in electric arc
Speed makes electronics be migrated to circular arc mechanism 3, and in transition process, due to the high speed transfer of electronics, electronics is touched with Ar atoms
It hits, forms Ar cations and new electronics, the ionization of this namely Ar gas will produce a large amount of electric arc in ionization process,
It is exactly aura, due to being loaded with bias supply 40 on Workpiece carrier 4, the Ar cations of generation are migrated to Workpiece carrier 4, to workpiece
Workpiece surface on carrier 4 is hit, and removes oxidation impurities, aqueous vapor and miscellaneous gas of workpiece surface etc., the present invention can be to work
Part all sites carry out uniformly thinned 300nm.
As shown in Fig. 8, Fig. 9, Figure 10 and Figure 11, it should be further noted that due to the material of cylindricality target in the present invention
Material is conventional use of target material in vacuum coating, can be one kind in Ti, TiAl, AlCr, Zr, Cr etc., more hollow
Ion source, can be by changing the first arc power 25 loaded, electric current is made to increase and then forming a large amount of electronics, even if electric current adds
400A is arrived greatly, will not be blown, this is that it is distinguished with the maximum of cathode in ion source, therefore, can be by vacuum chamber
The Ar gases of 0.3pa~1.2pa are inside passed through, the first arc power 24 of cooperation can generate a large amount of electronics, electronic impact Ar
The a large amount of Ar cations of atom generation, and a large amount of generations of Ar cations, may result in the reduction of Ar atoms, avoid Ar atoms
To the obstruction of Ar cations migration, the voltage/current of the first arc power 24 is 22V/100A in this course, and electronics is attracted to move
The voltage of the anode supply 30 of shifting is/and electric current is 60V/30A, and it is 50V to attract the voltage of the bias supply 40 of Ar cations migration
~400V, and traditional Ar gases for then needing to be passed through 2pa~6pa coordinate the HVB high voltage bias power supply of 600V~1000V, ability
Aura is generated, Ar cations is formed and may result in the migration of Ar atom pair Ar cations since the amount for the Ar gases being passed through is excessive
It is formed and is hindered, cause Ar cations that can not reach workpiece gully position, position that can only be to workpiece surface compared with easy to clean carries out clearly
It washes, or even the oxidation impurities of workpiece surface can not be removed.
In addition, the biased electrical power supply of up to 600V~1000V easily causes workpiece to be struck sparks, point is formed at workpiece tip location
End effect damages workpiece, and therefore, the bias supply of 50V~400V of the present invention can effectively reduce the probability of sparking and subtract
Weak point effect.
As shown in fig. 6, significantly, since during being ionized to Ar gas, hot environment is will produce, it is high
Temperature can cause the surface of cylindricality target 20 to generate oxide, and therefore, the surface of cylindricality target 20, which needs to surround, is provide with protective cover 24,
Cylindricality target 20 is stopped using protective cover 24, during cylindricality target initialization, the oxide on surface can be made de-
From, deposit on protective cover 24, at this point, the notch 241 on protective cover 24 backwards to Workpiece carrier 4 be arranged, electronics is from notch 241
Effusion, the circular arc mechanism 3 by being loaded with anode supply 30 carry out traction guiding.
Wherein, due to the presence of notch 241, electronics to anode mechanism 3 during carrying out traction acceleration migration, Cheng Qu
Line curves around traveling, is not provided with protective cover 24, and the electronics that cylindricality target 20 is sent out is emitted directly toward anode mechanism, curves around
Route compared with the space bigger of covering vacuum chamber 1, Ar atoms and electronics in vacuum chamber 1 can be made in electron transfer processes
Collision, ionizes out more Ar cations, and Ar cations are distributed also more uniform.
As shown in figure 3, in the present embodiment, revolving part 21 is preferably motor, passes through the connection type and column of belt transmission
Shape target 20 is sequentially connected, and cylindricality target 20 is driven to rotate.
As shown in figure 4, as a preferred embodiment, the Zhu Hu mechanisms 2 further include：
Circulating cooling connector 26, the circulating cooling connector 26 are set to the top of the cylindricality target 20, thereon side by side
It is provided with inlet 261 and liquid outlet 262；And
Resistance unit 27, the resistance unit 27 are set to the circuit that the first striking needle 23 is connect with the first arc power 25
On.
Further, be provided with U-shaped coolant flow channel 211 in the cylindricality target 20, one end of the coolant flow channel 211 with
The inlet 261 connects, and the other end is connect with the liquid outlet 262.
It should be noted that during cylindricality target 20 and the touching of the first striking needle 23 form electric arc, height can be formed
Warm environment needs reading cylindricality target 20 to cool down, and coolant liquid enters U-shaped coolant flow channel 211 from inlet 261
It is interior, then be discharged from liquid outlet 262, form hydronic process.
As shown in Figure 1, further illustrating, resistance unit 27 protects the first striking needle 23, avoids the first striking
Needle 23 and electric current in the touching arc process of cylindricality target 20 are excessive.
As shown in Fig. 2, as a preferred embodiment, the heating member 5 is arranged symmetrically, it is symmetrically disposed on institute
State the both sides of Workpiece carrier 4.
It should be noted that heating workpiece 5 heats Workpiece carrier 4, the temperature of lifting workpieces avoids ionization process
In the shock heating damage for leading to Workpiece structure, be symmetrical arranged, can make workpiece it is heated more uniformly.
Embodiment 2：
Fig. 2 is a kind of a kind of structural schematic diagram of the embodiment two of multi sphere ion etching plated film set composite of the present invention；Such as
Shown in Fig. 2, wherein using reference numeral corresponding with embodiment one with a kind of identical or corresponding component of embodiment, risen to be easy
See, hereafter only describes the distinctive points with embodiment one.The embodiment two and embodiment one shown in FIG. 1 the difference is that：
As shown in Fig. 2 and Fig. 7, a kind of multi sphere ion etching plated film set composite, the circular arc mechanism 3 includes：
Circular target 31, the circular target 31 are fixedly installed on the inner wall of the vacuum chamber 1, with the anode
Power supply 30 connects；
Second striking needle 32, the flexible side for being set to the circular target 31 of the second striking needle 32, and itself and institute
Setting can be touched by stating circular target 31；
Second arc power 33, second arc power 33 are set between the circular target 31 and the vacuum chamber 1,
Its cathode is connected with the circular target 31, and its anode is connected with the lateral wall of the vacuum chamber 1.
Further, the first power switch is provided on the circuit that the circular target 31 is connect with the anode supply 30
311。
Further, second source is provided on the circuit that the circular target 31 is connect with second arc power 33
Switch 312.
It should be noted that being etched completing the vacuum ionic to workpiece, after the impurity for removing workpiece surface, need to work
Part carries out vacuum coating, and at this time by disconnecting the first power switch 311, connection second source switch 312 makes anode supply 30 stop
It only works, the second arc power 33 is started to work.
Further, it is touched with cylindricality target 20 by the first striking needle 23, the second striking needle 32 is touched with circular target 31
It touches, generates electric arc, form multiple arc spots in cylindricality target 20 and 31 surface of circular target using electric arc, make cylindricality target 20 and circle
Coating Materials on shape target 31 escapes directly in the form of plasma, forms evaporating and ionizing source, the columnar target in the present invention
Material 20 is preferably Ti, the N of the Ti cations cooperation air inlet input of effusion with circular target 312Gas, under high temperature environment instead
TiN should be formed, TiN film plating layers are formed in workpiece surface, thickness is 3 μm or so, at this point, be exactly vacuum coating, therefore, the present invention
In Zhu Hu mechanisms 2 and circular arc mechanism 3 serve not only as the building block of vacuum ionic etching and work, while it is more as vacuum
The target of arc ion film plating works.
It is worth noting that, the installation position of center pillar arc of the present invention mechanism 2 and circular arc mechanism 3 is also by design,
When carrying out vacuum ionic etching, the electronics that Zhu Hu mechanisms 2 are sent out needs the traction of circular arc mechanism 3 to accelerate to cross vacuum chamber 1, and
When carrying out multi-arc ion plating film, Zhu Hu mechanisms 2 are divided into the both sides of Workpiece carrier 4 with circular arc mechanism 3, can provide plating simultaneously
The evaporating and ionizing source that film needs makes the more uniform of workpiece plated film.
Embodiment 3：
Fig. 5 is a kind of a kind of structural schematic diagram of the embodiment two of multi sphere ion etching plated film set composite of the present invention；Such as
Shown in Fig. 5, wherein using reference numeral corresponding with embodiment one with a kind of identical or corresponding component of embodiment, risen to be easy
See, hereafter only describes the distinctive points with embodiment one.The embodiment two and embodiment one shown in FIG. 1 the difference is that：
As shown in figure 5, a kind of multi sphere ion etching plated film set composite, the top connection setting of the first striking needle 23
There is rotary power part 28, which is fixedly connected with the outer wall of the vacuum chamber 1.
Further, the protective cover 24 with the vacuum chamber 1 be rotatablely connected, inner wall be equipped with ratchet 242, should
The pawl 231 connected on ratchet 242 and the first striking needle 23 stirs cooperation.
Further, the pawl 231 often coordinates with the ratchet 242 stirs primary, the rotation of the protective cover 24
180°。
As shown in Figure 7, it should be noted that when carrying out vacuum ionic etching, the notch 241 on protective cover 24 needs to carry on the back
It is arranged to Workpiece carrier 4, but when carrying out multi-arc ion plating film, the notch 241 on protective cover 24 then needs to carry towards workpiece
Body 4 is arranged, and since when carrying out vacuum ionic etching, the oxidation impurities on 20 surface of cylindricality target have been removed, therefore, is carrying out
When multi-arc ion plating film, notch 241 can make the target material in ion evaporation source quickly arrive at Workpiece carrier towards Workpiece carrier
On, reduce the consumption in migrating.
It further illustrates, the present invention drives the first striking needle 23 to be carried out with cylindricality target 20 by rotary power part 28
During touching, by the cooperation of pawl 231 and ratchet 242,180 ° of the rotation automatically of protective cover 24 is driven, is carved in vacuum ionic
When erosion, the first striking needle 23 is touched with cylindricality target 20, and notch 241 is backwards to Workpiece carrier 4, when carrying out multi-arc ion plating film,
First striking needle 23 is touched with cylindricality target 20, and notch 241 is towards Workpiece carrier 4.
In the present embodiment, rotary power part 28 is preferably rotary cylinder, and rotary power part 28 drives the rotation of the first striking needle 23
When turning, pawl 231 coordinates with ratchet 242, and protective cover 24 is driven to rotate, and when the touching of the first striking needle 23 and cylindricality target 20
When completing striking power on reset, pawl 231 is in vacancy cooperation with ratchet 242, and ratchet 242 does not rotate.
The course of work：
Vacuum ion plating process flow：
1) vacuumize process, vacuum degree 3X10 are carried out to vacuum chamber 1 by exhaust outlet 12-3mbar；
2) Workpiece carrier 4 of workpiece heats in device using heating element 5,480 DEG C of temperature, time 2 h；
3) Ar gases, gas pressure 9X10 are passed through by air inlet 11-3mbar；
4) Zhu Hu mechanisms 2 work, and the notch on protective cover 24 is backwards to Workpiece carrier 4,25 operating current of the first arc power/electricity
Pressure is 100A/22V；
5) circular arc mechanism 3 works, and operating current/voltage of anode supply 30 is 30A/60V；
6) Workpiece carrier 4 works, and operating current/voltage of bias supply 40 is 2A/50V；
7) electric current of anode supply is gradually adjusted by 30A to 100A, meanwhile, the voltage of bias supply is gradually adjusted by 50V
It is whole to 300V, working time 30min~60min.
Multi-arc ion plating film technological process：
1) the first arc power 25, anode supply 30 and bias supply 40 are disconnected, the input of Ar gases is closed；
2) heating element 5 maintains 450 DEG C of vacuum chamber temperature；
3) N is added by air inlet2Gas, air pressure 1X10-2Mbar,
4) 4 bias supply 40 of Workpiece carrier works, operating voltage 100V；
5) Zhu Hu mechanisms 2 work with circular arc mechanism 3, and the first arc power 25 and the second arc power 33 work, operating current/electricity
Pressure is 180A/25V；
6) working time 60min is maintained, power supply and gas are closed.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (10)
1. a kind of multi sphere ion etching plated film set composite, including vacuum chamber (1), which is confined space, and
Air inlet (11) and exhaust outlet (12) are offered on the vacuum chamber (1), which is characterized in that further include：
Zhu Hu mechanisms (2), the Zhu Hu mechanisms (2) are set to any side in the vacuum chamber (1) transverse direction comprising set
The cylindricality target (20) being placed in the vacuum chamber (1) is set to the vacuum chamber (1) and columnar target material (20) is driven to revolve outside
The revolving part (21) turned, the first striking of touching can be rotated with the cylindricality target (20) by being set to cylindricality target (20) side
Needle (23), circular cowling are set to the cylindricality target (20) and the protective cover (24) of the first striking needle (23) outside, the protective cover (24)
It opens up jagged (241), the first arc power (25) is provided between the cylindricality target (20) and the first striking needle (23),
The cathode of first arc power (25) is connect with the cylindricality target, anode connect the first striking needle (23) with it is described true
The lateral wall of plenum chamber (1)；
Circular arc mechanism (3), the circular arc mechanism (3) are at least one, are set to the described true of Zhu Hu mechanisms (2) offside
On the inner wall of plenum chamber (1), it is provided with anode supply (30) between the cylindricality target (20), the anode supply (30)
Cathode is connect with the cylindricality target (20), and anode is connect with the circular arc mechanism (3)；
Workpiece carrier (4), the Workpiece carrier (4) are set between the Zhu Hu mechanisms (2) and the circular arc mechanism (3),
Rotary setting is in the vacuum chamber (1), and it is connected with bias supply between the outer wall of the vacuum chamber (1)
(40), the cathode of the bias supply (40) is connect with the Workpiece carrier (4), the outer wall of anode and the vacuum chamber (1)
Connection；And
Heating member (5), at least one heating member (5) are set in the vacuum chamber (1), are set to the vacuum chamber
On the side wall of the longitudinal any side in room (1).
2. a kind of multi sphere ion etching plated film set composite according to claim 1, which is characterized in that the Zhu Hu mechanisms
(2) further include：
Circulating cooling connector (26), the circulating cooling connector (26) are set to the top of the cylindricality target (20), thereon simultaneously
Row is provided with inlet (261) and liquid outlet (262)；And
Resistance unit (27), the resistance unit (27) are set to the line that the first striking needle (23) connect with the first arc power (25)
On the road.
3. a kind of multi sphere ion etching plated film set composite according to claim 2, which is characterized in that the cylindricality target
(20) it is provided with U-shaped coolant flow channel (211) in, one end of the coolant flow channel (211) is connect with the inlet (261),
The other end is connect with the liquid outlet (262).
4. a kind of multi sphere ion etching plated film set composite according to claim 1, which is characterized in that first striking
Rotary power part (28) is connected at the top of needle (23), the outer wall of the rotary power part (28) and the vacuum chamber (1)
It is fixedly connected.
5. a kind of multi sphere ion etching plated film set composite according to claim 1, which is characterized in that the protective cover
(24) be rotatablely connected with the vacuum chamber (1), inner wall is equipped with ratchet (242), which draws with described first
The pawl (231) connected on arc needle (23) stirs cooperation.
6. a kind of multi sphere ion etching plated film set composite according to claim 5, which is characterized in that the pawl
(231) often coordinate with the ratchet (242) and stir primary, 180 ° of protective cover (24) rotation.
7. a kind of multi sphere ion etching plated film set composite according to claim 1, which is characterized in that the circular arc mechanism
(3) include：
Circular target (31), the circular target (31) is fixedly installed on the inner wall of the vacuum chamber (1), with the sun
Pole power supply (30) connects；
Second striking needle (32), the flexible side for being set to the circular target (31) of the second striking needle (32), and its with
The circular target (31) can touch setting；
Second arc power (33), second arc power (33) are set to the circular target (31) and the vacuum chamber (1)
Between, cathode is connected with the circular target (31), and its anode is connected with the lateral wall of the vacuum chamber (1).
8. a kind of multi sphere ion etching plated film set composite according to claim 7, which is characterized in that the circular target
(31) it is provided with the first power switch (311) on the circuit being connect with the anode supply (30).
9. a kind of multi sphere ion etching plated film set composite according to claim 7, which is characterized in that the circular target
(31) second source switch (312) is provided on the circuit being connect with second arc power (33).
10. a kind of multi sphere ion etching plated film set composite according to claim 1, which is characterized in that the heating member
(5) it is arranged symmetrically, is symmetrically disposed on the both sides of the Workpiece carrier (4).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810884500.4A CN108774727B (en) | 2018-08-06 | 2018-08-06 | A kind of multi sphere ion etching plated film set composite |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810884500.4A CN108774727B (en) | 2018-08-06 | 2018-08-06 | A kind of multi sphere ion etching plated film set composite |
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| Publication Number | Publication Date |
|---|---|
| CN108774727A true CN108774727A (en) | 2018-11-09 |
| CN108774727B CN108774727B (en) | 2019-06-14 |
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114164404A (en) * | 2021-11-13 | 2022-03-11 | 东莞市华升真空镀膜科技有限公司 | Vacuum coating equipment and coating method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101880863A (en) * | 2009-05-06 | 2010-11-10 | 中国科学院微电子研究所 | Multifunctional ion beam sputtering deposition and etching equipment |
| CN202201959U (en) * | 2011-07-30 | 2012-04-25 | 中山弘建 | LaB6 hollow cathode electron gun type multi-functional ion coating machine |
| CN103361612A (en) * | 2012-04-05 | 2013-10-23 | 鸿富锦精密工业（深圳）有限公司 | Cylindrical magnetron sputtering target |
| CN105779947A (en) * | 2016-04-26 | 2016-07-20 | 成都极星等离子科技有限公司 | Multi-arc ion plating device and film coating method |
-
2018
- 2018-08-06 CN CN201810884500.4A patent/CN108774727B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101880863A (en) * | 2009-05-06 | 2010-11-10 | 中国科学院微电子研究所 | Multifunctional ion beam sputtering deposition and etching equipment |
| CN202201959U (en) * | 2011-07-30 | 2012-04-25 | 中山弘建 | LaB6 hollow cathode electron gun type multi-functional ion coating machine |
| CN103361612A (en) * | 2012-04-05 | 2013-10-23 | 鸿富锦精密工业（深圳）有限公司 | Cylindrical magnetron sputtering target |
| CN105779947A (en) * | 2016-04-26 | 2016-07-20 | 成都极星等离子科技有限公司 | Multi-arc ion plating device and film coating method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114164404A (en) * | 2021-11-13 | 2022-03-11 | 东莞市华升真空镀膜科技有限公司 | Vacuum coating equipment and coating method |
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| CN108774727B (en) | 2019-06-14 |
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