CN108767065A - A method of directly preparing each film layer of Thinfilm solar cell component - Google Patents
A method of directly preparing each film layer of Thinfilm solar cell component Download PDFInfo
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- CN108767065A CN108767065A CN201810560589.9A CN201810560589A CN108767065A CN 108767065 A CN108767065 A CN 108767065A CN 201810560589 A CN201810560589 A CN 201810560589A CN 108767065 A CN108767065 A CN 108767065A
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- 239000010408 film Substances 0.000 title claims abstract description 25
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 17
- 210000003850 cellular structure Anatomy 0.000 title claims abstract description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 11
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 239000004411 aluminium Substances 0.000 claims abstract description 4
- 229910052786 argon Inorganic materials 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 238000005477 sputtering target Methods 0.000 claims abstract description 4
- 239000013077 target material Substances 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 239000012528 membrane Substances 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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Abstract
The present invention discloses a kind of method directly preparing each film layer of Thinfilm solar cell component, includes the following steps:S1, plating is taken to be formed with the glass of ito thin film as substrate;S2, substrate is placed in the vacuum chamber of magnetron sputtering apparatus, with ZnO target, Al2O3Target, SnS targets, Al targets are sputtering target material;S3, it is passed through argon working gas, starts ZnO target and Al2O3Target carries out cosputtering, and in ito thin film surface sputter Window layer, Window layer is to mix aluminium ZnO film;S4, Al is closed2O3Target prepares ZnO layer using ZnO target in Window layer;S5, ZnO target is closed, starts SnS targets, SnS layers are prepared in ZnO layer;S6, SnS targets are closed, starts Al targets, Al electrode layers are prepared on SnS layers;Entire being coated with for membrane system is all completed during taking out a vacuum, and the secondary taking-up for avoiding sample pollutes, and the preparation process of each film layer of whole process is very simple, and controllability, repeatability are very strong, ensure that the performance of each film layer.
Description
Technical field
The present invention relates to a kind of methods directly preparing each film layer of Thinfilm solar cell component.
Background technology
Thin-film solar cells is fast-developing in recent years, due to cleaning, safe and pollution-free, already takes up entire photovoltaic
15% or more of the market share.Currently, the preparation for each film layer of solar cell, due to many limits such as technique and equipment
System, the preparation that each membrane system film is completed for an online step have certain challenge, and for secondary or even in multiple equipment
It is upper to complete being coated with for each membrane system, secondary pollution certainly will be caused to film, be unfavorable for being coated with for next membrane system.
Invention content
The purpose of the present invention is to provide a kind of method directly preparing each film layer of Thinfilm solar cell component, this method
Each film layer of Thinfilm solar cell component can once be prepared on ito thin film, avoid secondary pollution, improve membrane system matter
Amount.
The technical solution adopted by the present invention to solve the technical problems is:
A method of each film layer of Thinfilm solar cell component is directly prepared, is included the following steps:
S1, plating is taken to be formed with the glass of ito thin film as substrate;
S2, substrate is placed in the vacuum chamber of magnetron sputtering apparatus, with ZnO target, Al2O3Target, SnS targets, Al targets are sputtering target
Material;
S3, it is passed through argon working gas, starts ZnO target and Al2O3Target carries out cosputtering, in ito thin film surface sputter Window layer,
Window layer is to mix aluminium ZnO film;
S4, Al is closed2O3Target prepares ZnO layer using ZnO target in Window layer;
S5, ZnO target is closed, starts SnS targets, SnS layers are prepared in ZnO layer;
S6, SnS targets are closed, starts Al targets, Al electrode layers are prepared on SnS layers.
Further, when step S3 sputters, ZnO target power 150W, Al2O3Target power output 50W, operating air pressure 0.5Pa, Ar are total
Flow 40sccm, sputtering time 30min.
Further, when step S4 sputters, ZnO target power 200W, operating air pressure 1.0Pa, Ar flow 30sccm, when sputtering
Between 20min.
Further, when step S5 sputters, SnS target power output 140W, operating air pressure 0.7Pa, Ar flow 20sccm, when sputtering
Between 15min.
Further, when step S6 sputters, Al target power output 100W, operating air pressure 0.3Pa, Ar flow 20sccm, when sputtering
Between 10min.
The invention has the advantages that four targets are mutual indepedent, by the change of each target technological parameter, can prepare
Arbitrary satisfactory film, preparation process is simple, reproducible, and can save the purchase cost of a large amount of targets, improves target
The utilization rate of material;Entire being coated with for membrane system is all completed during taking out a vacuum, and the secondary taking-up for avoiding sample is made
At pollution, and the preparation process of each film layer of whole process is very simple, and controllability, repeatability are very strong, ensure that each
The performance of film layer.
Specific implementation mode
The present invention provides a kind of method directly preparing each film layer of Thinfilm solar cell component, includes the following steps:
S1, plating is taken to be formed with the glass of ito thin film as substrate;
S2, substrate is placed in the vacuum chamber of magnetron sputtering apparatus, with ZnO target, Al2O3Target, SnS targets, Al targets are sputtering target
Material;
S3, it is passed through argon working gas, starts ZnO target and Al2O3Target carries out cosputtering, in ito thin film surface sputter Window layer,
Window layer is to mix aluminium ZnO film;When sputtering, ZnO target power 150W, Al2O3Target power output 50W, operating air pressure 0.5Pa, Ar total flow
40sccm, sputtering time 30min;
S4, Al is closed2O3Target prepares ZnO layer using ZnO target in Window layer;When sputtering, ZnO target power 200W, work gas
Press 1.0Pa, Ar flow 30sccm, sputtering time 20min;
S5, ZnO target is closed, starts SnS targets, SnS layers are prepared in ZnO layer;When sputtering, SnS target power output 140W, operating air pressure
0.7Pa, Ar flow 20sccm, sputtering time 15min;
S6, SnS targets are closed, starts Al targets, Al electrode layers are prepared on SnS layers;When sputtering, Al target power output 100W, operating air pressure
0.3Pa, Ar flow 20sccm, sputtering time 10min.
The above described is only a preferred embodiment of the present invention, being not intended to limit the present invention in any form;Appoint
What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above
Method and technology contents make many possible changes and modifications to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations
Apply example.Therefore, every content without departing from technical solution of the present invention, according to the technical essence of the invention does above example
Any simple modification, equivalent replacement, equivalence changes and modification, still fall within technical solution of the present invention protection in the range of.
Claims (5)
1. a kind of method directly preparing each film layer of Thinfilm solar cell component, which is characterized in that include the following steps:
S1, plating is taken to be formed with the glass of ito thin film as substrate;
S2, substrate is placed in the vacuum chamber of magnetron sputtering apparatus, with ZnO target, Al2O3Target, SnS targets, Al targets are sputtering target
Material;
S3, it is passed through argon working gas, starts ZnO target and Al2O3Target carries out cosputtering, in ito thin film surface sputter Window layer,
Window layer is to mix aluminium ZnO film;
S4, Al is closed2O3Target prepares ZnO layer using ZnO target in Window layer;
S5, ZnO target is closed, starts SnS targets, SnS layers are prepared in ZnO layer;
S6, SnS targets are closed, starts Al targets, Al electrode layers are prepared on SnS layers.
2. a kind of method directly preparing each film layer of Thinfilm solar cell component according to claim 1, feature exist
When, step S3 sputters, ZnO target power 150W, Al2O3Target power output 50W, operating air pressure 0.5Pa, Ar total flow 40sccm, sputtering
Time 30min.
3. a kind of method directly preparing each film layer of Thinfilm solar cell component according to claim 1, feature exist
When, step S4 sputters, ZnO target power 200W, operating air pressure 1.0Pa, Ar flow 30sccm, sputtering time 20min.
4. a kind of method directly preparing each film layer of Thinfilm solar cell component according to claim 1, feature exist
When, step S5 sputters, SnS target power output 140W, operating air pressure 0.7Pa, Ar flow 20sccm, sputtering time 15min.
5. a kind of method directly preparing each film layer of Thinfilm solar cell component according to claim 1, feature exist
When, step S6 sputters, Al target power output 100W, operating air pressure 0.3Pa, Ar flow 20sccm, sputtering time 10min.
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CN201810560589.9A CN108767065A (en) | 2018-06-04 | 2018-06-04 | A method of directly preparing each film layer of Thinfilm solar cell component |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102456768A (en) * | 2010-11-02 | 2012-05-16 | 上海大学 | Preparation method of ZnO/SnS solar cell element containing ZnO:Al window layer |
CN103928576A (en) * | 2014-05-09 | 2014-07-16 | 攀枝花学院 | SnS/ZnS lamination thin film solar cell manufacturing method |
JP2015107903A (en) * | 2013-10-22 | 2015-06-11 | 住友金属鉱山株式会社 | Tin sulfide sintered body and manufacturing method therefor |
-
2018
- 2018-06-04 CN CN201810560589.9A patent/CN108767065A/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102456768A (en) * | 2010-11-02 | 2012-05-16 | 上海大学 | Preparation method of ZnO/SnS solar cell element containing ZnO:Al window layer |
JP2015107903A (en) * | 2013-10-22 | 2015-06-11 | 住友金属鉱山株式会社 | Tin sulfide sintered body and manufacturing method therefor |
CN103928576A (en) * | 2014-05-09 | 2014-07-16 | 攀枝花学院 | SnS/ZnS lamination thin film solar cell manufacturing method |
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Application publication date: 20181106 |