CN108767065A - A method of directly preparing each film layer of Thinfilm solar cell component - Google Patents

A method of directly preparing each film layer of Thinfilm solar cell component Download PDF

Info

Publication number
CN108767065A
CN108767065A CN201810560589.9A CN201810560589A CN108767065A CN 108767065 A CN108767065 A CN 108767065A CN 201810560589 A CN201810560589 A CN 201810560589A CN 108767065 A CN108767065 A CN 108767065A
Authority
CN
China
Prior art keywords
target
zno
sns
targets
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201810560589.9A
Other languages
Chinese (zh)
Inventor
沈洪雪
姚婷婷
杨勇
李刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Original Assignee
CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd filed Critical CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Priority to CN201810560589.9A priority Critical patent/CN108767065A/en
Publication of CN108767065A publication Critical patent/CN108767065A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02554Oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02697Forming conducting materials on a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0296Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0296Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Materials Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention discloses a kind of method directly preparing each film layer of Thinfilm solar cell component, includes the following steps:S1, plating is taken to be formed with the glass of ito thin film as substrate;S2, substrate is placed in the vacuum chamber of magnetron sputtering apparatus, with ZnO target, Al2O3Target, SnS targets, Al targets are sputtering target material;S3, it is passed through argon working gas, starts ZnO target and Al2O3Target carries out cosputtering, and in ito thin film surface sputter Window layer, Window layer is to mix aluminium ZnO film;S4, Al is closed2O3Target prepares ZnO layer using ZnO target in Window layer;S5, ZnO target is closed, starts SnS targets, SnS layers are prepared in ZnO layer;S6, SnS targets are closed, starts Al targets, Al electrode layers are prepared on SnS layers;Entire being coated with for membrane system is all completed during taking out a vacuum, and the secondary taking-up for avoiding sample pollutes, and the preparation process of each film layer of whole process is very simple, and controllability, repeatability are very strong, ensure that the performance of each film layer.

Description

A method of directly preparing each film layer of Thinfilm solar cell component
Technical field
The present invention relates to a kind of methods directly preparing each film layer of Thinfilm solar cell component.
Background technology
Thin-film solar cells is fast-developing in recent years, due to cleaning, safe and pollution-free, already takes up entire photovoltaic 15% or more of the market share.Currently, the preparation for each film layer of solar cell, due to many limits such as technique and equipment System, the preparation that each membrane system film is completed for an online step have certain challenge, and for secondary or even in multiple equipment It is upper to complete being coated with for each membrane system, secondary pollution certainly will be caused to film, be unfavorable for being coated with for next membrane system.
Invention content
The purpose of the present invention is to provide a kind of method directly preparing each film layer of Thinfilm solar cell component, this method Each film layer of Thinfilm solar cell component can once be prepared on ito thin film, avoid secondary pollution, improve membrane system matter Amount.
The technical solution adopted by the present invention to solve the technical problems is:
A method of each film layer of Thinfilm solar cell component is directly prepared, is included the following steps:
S1, plating is taken to be formed with the glass of ito thin film as substrate;
S2, substrate is placed in the vacuum chamber of magnetron sputtering apparatus, with ZnO target, Al2O3Target, SnS targets, Al targets are sputtering target Material;
S3, it is passed through argon working gas, starts ZnO target and Al2O3Target carries out cosputtering, in ito thin film surface sputter Window layer, Window layer is to mix aluminium ZnO film;
S4, Al is closed2O3Target prepares ZnO layer using ZnO target in Window layer;
S5, ZnO target is closed, starts SnS targets, SnS layers are prepared in ZnO layer;
S6, SnS targets are closed, starts Al targets, Al electrode layers are prepared on SnS layers.
Further, when step S3 sputters, ZnO target power 150W, Al2O3Target power output 50W, operating air pressure 0.5Pa, Ar are total Flow 40sccm, sputtering time 30min.
Further, when step S4 sputters, ZnO target power 200W, operating air pressure 1.0Pa, Ar flow 30sccm, when sputtering Between 20min.
Further, when step S5 sputters, SnS target power output 140W, operating air pressure 0.7Pa, Ar flow 20sccm, when sputtering Between 15min.
Further, when step S6 sputters, Al target power output 100W, operating air pressure 0.3Pa, Ar flow 20sccm, when sputtering Between 10min.
The invention has the advantages that four targets are mutual indepedent, by the change of each target technological parameter, can prepare Arbitrary satisfactory film, preparation process is simple, reproducible, and can save the purchase cost of a large amount of targets, improves target The utilization rate of material;Entire being coated with for membrane system is all completed during taking out a vacuum, and the secondary taking-up for avoiding sample is made At pollution, and the preparation process of each film layer of whole process is very simple, and controllability, repeatability are very strong, ensure that each The performance of film layer.
Specific implementation mode
The present invention provides a kind of method directly preparing each film layer of Thinfilm solar cell component, includes the following steps:
S1, plating is taken to be formed with the glass of ito thin film as substrate;
S2, substrate is placed in the vacuum chamber of magnetron sputtering apparatus, with ZnO target, Al2O3Target, SnS targets, Al targets are sputtering target Material;
S3, it is passed through argon working gas, starts ZnO target and Al2O3Target carries out cosputtering, in ito thin film surface sputter Window layer, Window layer is to mix aluminium ZnO film;When sputtering, ZnO target power 150W, Al2O3Target power output 50W, operating air pressure 0.5Pa, Ar total flow 40sccm, sputtering time 30min;
S4, Al is closed2O3Target prepares ZnO layer using ZnO target in Window layer;When sputtering, ZnO target power 200W, work gas Press 1.0Pa, Ar flow 30sccm, sputtering time 20min;
S5, ZnO target is closed, starts SnS targets, SnS layers are prepared in ZnO layer;When sputtering, SnS target power output 140W, operating air pressure 0.7Pa, Ar flow 20sccm, sputtering time 15min;
S6, SnS targets are closed, starts Al targets, Al electrode layers are prepared on SnS layers;When sputtering, Al target power output 100W, operating air pressure 0.3Pa, Ar flow 20sccm, sputtering time 10min.
The above described is only a preferred embodiment of the present invention, being not intended to limit the present invention in any form;Appoint What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above Method and technology contents make many possible changes and modifications to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations Apply example.Therefore, every content without departing from technical solution of the present invention, according to the technical essence of the invention does above example Any simple modification, equivalent replacement, equivalence changes and modification, still fall within technical solution of the present invention protection in the range of.

Claims (5)

1. a kind of method directly preparing each film layer of Thinfilm solar cell component, which is characterized in that include the following steps:
S1, plating is taken to be formed with the glass of ito thin film as substrate;
S2, substrate is placed in the vacuum chamber of magnetron sputtering apparatus, with ZnO target, Al2O3Target, SnS targets, Al targets are sputtering target Material;
S3, it is passed through argon working gas, starts ZnO target and Al2O3Target carries out cosputtering, in ito thin film surface sputter Window layer, Window layer is to mix aluminium ZnO film;
S4, Al is closed2O3Target prepares ZnO layer using ZnO target in Window layer;
S5, ZnO target is closed, starts SnS targets, SnS layers are prepared in ZnO layer;
S6, SnS targets are closed, starts Al targets, Al electrode layers are prepared on SnS layers.
2. a kind of method directly preparing each film layer of Thinfilm solar cell component according to claim 1, feature exist When, step S3 sputters, ZnO target power 150W, Al2O3Target power output 50W, operating air pressure 0.5Pa, Ar total flow 40sccm, sputtering Time 30min.
3. a kind of method directly preparing each film layer of Thinfilm solar cell component according to claim 1, feature exist When, step S4 sputters, ZnO target power 200W, operating air pressure 1.0Pa, Ar flow 30sccm, sputtering time 20min.
4. a kind of method directly preparing each film layer of Thinfilm solar cell component according to claim 1, feature exist When, step S5 sputters, SnS target power output 140W, operating air pressure 0.7Pa, Ar flow 20sccm, sputtering time 15min.
5. a kind of method directly preparing each film layer of Thinfilm solar cell component according to claim 1, feature exist When, step S6 sputters, Al target power output 100W, operating air pressure 0.3Pa, Ar flow 20sccm, sputtering time 10min.
CN201810560589.9A 2018-06-04 2018-06-04 A method of directly preparing each film layer of Thinfilm solar cell component Withdrawn CN108767065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810560589.9A CN108767065A (en) 2018-06-04 2018-06-04 A method of directly preparing each film layer of Thinfilm solar cell component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810560589.9A CN108767065A (en) 2018-06-04 2018-06-04 A method of directly preparing each film layer of Thinfilm solar cell component

Publications (1)

Publication Number Publication Date
CN108767065A true CN108767065A (en) 2018-11-06

Family

ID=64002095

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810560589.9A Withdrawn CN108767065A (en) 2018-06-04 2018-06-04 A method of directly preparing each film layer of Thinfilm solar cell component

Country Status (1)

Country Link
CN (1) CN108767065A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102456768A (en) * 2010-11-02 2012-05-16 上海大学 Preparation method of ZnO/SnS solar cell element containing ZnO:Al window layer
CN103928576A (en) * 2014-05-09 2014-07-16 攀枝花学院 SnS/ZnS lamination thin film solar cell manufacturing method
JP2015107903A (en) * 2013-10-22 2015-06-11 住友金属鉱山株式会社 Tin sulfide sintered body and manufacturing method therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102456768A (en) * 2010-11-02 2012-05-16 上海大学 Preparation method of ZnO/SnS solar cell element containing ZnO:Al window layer
JP2015107903A (en) * 2013-10-22 2015-06-11 住友金属鉱山株式会社 Tin sulfide sintered body and manufacturing method therefor
CN103928576A (en) * 2014-05-09 2014-07-16 攀枝花学院 SnS/ZnS lamination thin film solar cell manufacturing method

Similar Documents

Publication Publication Date Title
CN103924199B (en) A kind of organic materials housing and film coating method thereof with metal-like
CN106684184B (en) A kind of copper-indium-galliun-selenium film solar cell Window layer and preparation method thereof
CN201343569Y (en) Continuous plane magnetron sputtering filming device
CN101476111A (en) Transparent conductive film and preparation thereof
CN105568239B (en) A kind of blue vacuum coating method
CN103483719A (en) Repeatedly-adhered heat-insulating film and manufacturing method thereof
CN103243305A (en) Secondary electron emission film preparation method
CN105648414A (en) Method for preparing nitrogen-contained titanium dioxide film by using magnetron sputtering method
CN103928576B (en) SnS/ZnS overlapping thin film solar battery preparation method
CN104377261B (en) One prepares CdTe thin film solar panel method
CN108767065A (en) A method of directly preparing each film layer of Thinfilm solar cell component
CN105063557A (en) Method for directional resistance value increase of ITO conducting film
CN104480436A (en) Method for preparing high-hardness germanium carbide film with variable refractive index
CN107315298B (en) Brown electrochromic charge storage electrode and preparation method thereof
CN103938210B (en) A kind of preparation method of AZO transparent conductive film
CN108642463A (en) A kind of preparation method for electrode laminated film before solar cell
CN206301129U (en) A kind of high infrared reflection full-solid electrochromic glass
CN106116176B (en) A kind of coral magnetron sputtering low radiation coated glass production technology
CN103924191A (en) Method for plating ITO thin film on substrate
CN107620047A (en) A kind of reaction chamber and processing method for PVD plated films
CN204661820U (en) A kind of PVD vaccum ion coater
CN103866253B (en) A kind of ultra-thin AZO transparent conductive film of high carrier concentration and preparation method thereof
CN108914065B (en) Multi-element conductive oxide material for RPD and preparation method thereof
CN101318778A (en) Solar energy electrically conducting glass and production technology
CN109448922A (en) A kind of preparation method of flexible electronic information glass

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication
WW01 Invention patent application withdrawn after publication

Application publication date: 20181106