CN108767048A - A kind of flexibility day blind detector and preparation method thereof - Google Patents
A kind of flexibility day blind detector and preparation method thereof Download PDFInfo
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- CN108767048A CN108767048A CN201810549684.9A CN201810549684A CN108767048A CN 108767048 A CN108767048 A CN 108767048A CN 201810549684 A CN201810549684 A CN 201810549684A CN 108767048 A CN108767048 A CN 108767048A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000004544 sputter deposition Methods 0.000 claims abstract description 60
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000005084 Strontium aluminate Substances 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 80
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 54
- 229910052786 argon Inorganic materials 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 26
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 description 12
- 239000008367 deionised water Substances 0.000 description 9
- 229910021641 deionized water Inorganic materials 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of blind detectors of flexible day and preparation method thereof, and the preparation method includes：1) Sr is grown using magnetron sputtering on substrate3Al2O6Film；2) in Sr3Al2O6On film, using Grown by Magnetron Sputtering Ga2O3Film；3) into the water by sample made from step 2), it is dipped to Sr3Al2O6Film is dissolved, and detaches substrate and Ga2O3Film obtains Ga2O3Film；4) by Ga2O3Film is transferred on flexible substrate PET, and Ga is blocked with the interdigital electrode mask plate of hollow out2O3Film, using magnetron sputtering elder generation splash-proofing sputtering metal Ti, then splash-proofing sputtering metal Au to get the Au/Ti interdigital electrodes；5) two In electrodes are connected in the Au/Ti interdigital electrodes to get blind detector of flexible day.Preparation process of the present invention is simple, and process controllability is strong, easy to operate；Obtained day, blind detector had certain flexible.
Description
Technical field
The present invention relates to semiconductor detector technical fields, and in particular to a kind of flexibility day blind detector and its preparation side
Method.
Background technology
Ga2O3As a kind of novel super semiconductor material with wide forbidden band.Ga2O3Energy gap just fall it is blind ultraviolet in day
Wave band (200-280nm), about 4.9eV are not interfered by extraneous sunlight, and solar blind ultraviolet light signal detectivity is high,
It works in the day blind Ultraviolet Communication almost zero error of this wave band, is had a wide range of applications in military, space flight and aviation.Ga2O3's
Breakdown field is powerful (up to 8MV/cm), and Bali adds the figure of merit big, is the ideal material of field-effect transistor.Meanwhile Ga2O3Also it can be used
The devices such as producing transparent conductive electrode, information-storing device, gas sensor, LED substrate.
Be applied in new electronic technology with flexible, light, flexible, flexible and transparent 2D materials and
Development, including wearable energy collecting system, foldable electronic, curved screens electronic equipment, soft portable equipment and
Display is wrapped.Flexible, flexible, scalable, sensitive flexible solar blind UV electric explorer can be applied to portable electronic
Equipment, display equipment etc..
In order to realize Ga2O3Application of the film in flexible day blind sensitive detection parts, scientific research personnel are directly low on flexible substrates
Temperature growth Ga2O3Method obtain amorphous Ga2O3Fexible film.But non-crystalline material is (such as strong in high temperature or other adverse circumstances
Acid or alkaline environment) in easily generation property become, cause device performance unstable.If can both have been obtained by a kind of mode soft
Tough, independent Ga2O3Film realizes the preparation of day blind detector, and can ensure high crystallinity, makes device in harsh environment
Performance is stablized.Meanwhile according to application demand, to the Ga of high crystalline2O3Film carries out shearing and further recombination, is assembled
In flexible substrate or rigid substrate, its application in the devices is realized.
Invention content
The purpose of the present invention is to provide a kind of preparation method of flexible day blind detector, the preparation method, including such as
Lower step：
1) method of magnetron sputtering is used to grow one layer of Sr on substrate for the first time3Al2O6Film；
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows one layer of Ga2O3Film；
3) into the water by sample made from step 2), it is dipped to Sr3Al2O6After film is dissolved, substrate and Ga are detached2O3
Film obtains Ga2O3Film；
4) by the Ga2O3Film is transferred on flexible substrate PET, and Ga is blocked with the interdigital electrode mask plate of hollow out2O3It is thin
Film uses the method elder generation splash-proofing sputtering metal Ti of magnetron sputtering for the third time, then splash-proofing sputtering metal Au is to get Au/Ti interdigital electrodes；
5) two In electrodes are connected in the Au/Ti interdigital electrodes to get blind detector of flexible day.
Day blind detector produced by the present invention has certain flexible.
Wherein, substrate of the present invention selects the substance for being not involved in reaction and stable structure, such as SrTiO3、Al2O3、
Single crystalline Si etc.；Particularly preferably use single crystalline Si.PET is polyethylene terephthalate.
The present invention first covers metal Ti, then covers metal Au, and metal Ti is effectively avoided to be aoxidized, and the work function of metal Ti
With Ga2O3The matching degree of the energy gap of film is high.
The present invention and ensures metal and Ga in order to avoid the waste of noble metal2O3The contact surface of film；So that it is guaranteed that final
The comprehensive performance of product, the thickness of the preferably described metal Ti are that the thickness ratio of 30~50nm, the metal Ti and metal Au are 1:2
~4；The thickness of the further preferred metal Ti is that the thickness ratio of 35~45nm, the metal Ti and metal Au are 1:2~3；
When the thickness ratio that the thickness of the metal Ti is 40nm, the metal Ti and metal Au is 1:When 2.5, effect is optimal.
The present invention is preferred, a length of 2600~3000 μm of the finger of the Au/Ti interdigital electrodes mask plate, and finger beam is 180~220
μm, it is 180~220 μm to refer to spacing.It is further preferred that described refer to a length of 2800 μm, finger beam is 200 μm, and it is 200 μ to refer to spacing
m。
Au/Ti interdigital electrodes of the present invention, the Ga during electrode can be made to stitch2O3The more illumination of film absorption, to shape
At more photo-generated carriers；In actual use, these photo-generated carriers can adequately be utilized.In addition, the work content of Ti
Number and Ga2O3The energy gap of film is close, can preferably realize Ohmic contact.
In order to which the Sr is effectively ensured3Al2O6Film, the Ga2O3The thickness of film, the thickness of splash-proofing sputtering metal Ti and metal Au
Degree and Sr3Al2O6Solubility property, the Ga of film2O3The comprehensive performance of film and Au/Ti interdigital electrodes.The present invention is further excellent
Change the sputtering condition and sputtering time of magnetron sputtering
Wherein, the actual conditions of magnetron sputtering described in step 1) are：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10- 3Pa, and adjust underlayer temperature to 400~800 DEG C, argon gas is passed through with the flow of 20~25sccm, keep air pressure be 0.2~
0.45Pa sputters 1.5~3h by the sputtering power of 70~100W.
When the air pressure is 0.3~0.4Pa, more conducively Sr3Al2O6The subsequent dissolution of film；When air pressure is 0.35Pa
When, Sr3Al2O6The water soluble characteristic of film is best.Preferably, back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust lining
Bottom temperature is passed through argon gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.3~0.4Pa, by 85~95W
Sputtering power, sputter 1.8~2.2h.
It is furthermore preferred that the actual conditions of the magnetron sputtering are：Back end vacuum is evacuated to 1 × 10-4Pa, and adjust underlayer temperature
To 500 DEG C~750 DEG C, inert gas is passed through with the flow of 24sccm, holding air pressure is that 0.35Pa is splashed by the sputtering power of 90W
Penetrate 2h.
Wherein, the actual conditions of magnetron sputtering described in step 2) are：
Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust underlayer temperature to 400~800 DEG C, with 20~
The flow of 25sccm is passed through argon gas, and holding air pressure is 0.6~1Pa, by the sputtering power of 70~100W, sputters 1.5~3h；
Preferably, back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust underlayer temperature to 500~750 DEG C, with
The flow of 22~24sccm is passed through argon gas, and holding air pressure is 0.7~0.9Pa, presses the sputtering power of 85~95W, sputter 1.8~
2.2h；
Most preferably, the actual conditions of the magnetron sputtering are：Back end vacuum is evacuated to 1 × 10-4Pa, and adjust underlayer temperature
To 500 DEG C~750 DEG C, inert gas is passed through with the flow of 24sccm, holding air pressure is that 0.8Pa is splashed by the sputtering power of 80W
Penetrate 2h.
Inert gas of the present invention is preferably argon gas, and under the air pressure of adaptation, argon gas forms Ar ions in magnetic control,
Ar ions impact gallium oxide target in magnetic field environment, sputter gallium oxide molecule deposition and form gallium oxide film on substrate.
Wherein, the actual conditions of magnetron sputtering described in step 4) are：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10- 3Pa, and it is room temperature to adjust underlayer temperature, and argon gas is passed through with the flow of 20~25sccm, holdings air pressure is 3~5Pa, by 30~
The sputtering power of 50W, Ti layers of sputtering time is 30~50s, and Au layers of sputtering time is 100~140s；
Preferably, back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and it is room temperature to adjust underlayer temperature, with 22~
The flow of 24sccm is passed through argon gas, and holding air pressure is 3.5~4.0Pa, by the sputtering power of 35~45W, Ti layers of sputtering time
For 35~45s, Au layers of sputtering time is 110~130s；
Most preferably, back end vacuum is evacuated to 1 × 10-4Pa, and underlayer temperature is adjusted to room temperature, it is passed through with the flow of 24sccm
Argon gas, holding air pressure are 3.8Pa, are 40W, the sputtering 120s of Ti layers of 40s, Au layers of sputtering with sputtering power.
Wherein, it is detached described in step 3) and is specially：Ga will be covered with2O3The substrate of film takes out the water surface, waits for Ga2O3Film
Upper surface does not have moisture, Ga2O3It slowly tilts and puts back in water again in the case of also having moisture between film and substrate, you can separation lining
Bottom and Ga2O3Film.
The water is commonly used in the art, does not influence the water of reaction, such as deionized water.
Wherein, in step 5), after removing the interdigital electrode mask plate, using mechanical force in the Au/Ti interdigital electrodes
Two corners on press upper a diameter of 0.5~1.0mm In electrodes；The In electrodes reconnect copper wire, you can.The present invention uses
In electrode structures stablize, and it is flexible more excellent.It is preferred that using the In electrodes of a diameter of 0.8mm.
Wherein, the Si substrates further include cleaning before use；
Preferably, described clean is specially：Substrate is dipped into successively each ultrasonic 10 in acetone, ethyl alcohol, deionized water~
20 minutes, taking-up was fully rinsed with deionized water again, dry, for use.
The present invention provides a kind of preferred embodiment, and the preparation method comprises the following steps：
1) using single crystalline Si as substrate, the method for magnetron sputtering is used to grow one layer of Sr over the substrate for the first time3Al2O6
Film；
For the first time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust
Underlayer temperature is passed through argon gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.3~0.4Pa, by 85~
The sputtering power of 95W sputters 1.8~2.2h；.
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows one layer of Ga2O3Film；
Second use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust
Underlayer temperature is passed through argon gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.7~0.9Pa, by 85~
The sputtering power of 95W sputters 1.8~2.2h；
3) into the water by sample made from step 2), it is dipped to Sr3Al2O6After film is completely dissolved, separation substrate and
Ga2O3Film obtains Ga2O3Film.
4) by the Ga2O3Film is transferred on flexible substrate PET, and Ga is blocked with the interdigital electrode mask plate of hollow out2O3It is thin
Film uses the method elder generation splash-proofing sputtering metal Ti of magnetron sputtering for the third time, then splash-proofing sputtering metal Au is to get Au/Ti interdigital electrodes.
Third time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust
Underlayer temperature is room temperature, is passed through argon gas with the flow of 22~24sccm, holding air pressure is 3.5~4.0Pa, by splashing for 35~45W
Power is penetrated, Ti layers of sputtering time is 35~45s, and Au layers of sputtering time is 110~130s；
5) after removing the interdigital electrode mask plate, using mechanical force on two corners of the Au/Ti interdigital electrodes
By the In electrodes of upper a diameter of 0.5~1.0mm；The In electrodes reconnect copper wire to get blind detector of flexible day.
Preparation process of the present invention is simple, and substrate used is commercial product；For the present invention in preparation process, use is commercialized
The water-soluble layer Sr of preparation method Grown by Magnetron Sputtering3Al2O6Film and Ga2O3Film, process controllability is strong, easy to operate, gained film
Surface compact, thickness stable uniform, can large area prepare, it is reproducible.
Description of the drawings
Fig. 1 is blind detector of flexible day made from embodiment 1；
Fig. 2 is flexible day blind detector made from embodiment 1 in 1mW/cm2254nm illumination under be not bent, be bent upwards
And the I-V curve figure in the case of being bent downwardly；
It in 5V biass and light intensity is 1mW/cm that Fig. 3, which is flexible day blind detector made from embodiment 1,2254nm illumination under,
The I-t curve graphs measured；
Fig. 4 is flexible solar blind light electric explorer made from embodiment 2 in intensity of illumination respectively dark, 5mW/cm2With
1mW/cm2254nm ultraviolet lights under, the I-V curve figure that measures；
It in 5V biass and light intensity is 2mW/cm that Fig. 5, which is flexible solar blind light electric explorer made from embodiment 2,2254nm light
According under, cycle twice turn on light and close the I-t curve graphs that measure by lamp.
Fig. 6 be comparative example 1 made from day blind detector I-V diagram；
Fig. 7 be comparative example 2 made from day blind detector I-V diagram.
Specific implementation mode
The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention..
Following examples are purchased using Si in Hefei Yuan Jing tech materials Co., Ltd, and size is：10mm×12mm×
0.5mm
Si is using preceding needing specifically to clean, specially：Substrate is dipped into successively each super in acetone, ethyl alcohol, deionized water
Sound 15 minutes, is rinsed with deionized water again after taking-up, finally dry with dry N2 air-blowings, for use.
Embodiment 1
The present embodiment provides a kind of preparation methods of blind detector of flexible day, include the following steps：
1) using Si as substrate, it is put into settling chamber, uses the method for magnetron sputtering to grow one layer over the substrate for the first time
Sr3Al2O6Film；
For the first time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, adjustment underlayer temperature to 750
DEG C, argon gas is passed through with the flow of 24sccm, holding air pressure is 0.35Pa, with the sputtering power of 90W, sputters 2h.
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows one layer of Ga2O3Film；
Second use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, adjustment underlayer temperature are 750
DEG C, argon gas is passed through with the flow of 25sccm, holding air pressure is 0.8Pa, with the sputtering power of 80W, sputters 2h.
3) sample made from step 2) is put into deionized water, after standing 6h, takes out sample at a slant with tweezers, wait for
Ga2O3Film upper surface moisture is micro- dry, is put back in deionized water slowly tilting, Ga2O3Film can be detached from Si substrates and swim in
It on the water surface, spontaneously dries, obtains self-supporting Ga2O3Film.
4) by Ga2O3Film is transferred on flexible substrate PET, with the interdigital electrode mask plate (specification of hollow out：Refer to long 2800 μ
M, 200 μm of finger beam refer to 200 μm of spacing) block Ga2O3Film uses the method elder generation splash-proofing sputtering metal Ti of magnetron sputtering for the third time, then
Splash-proofing sputtering metal Au is to get Au/Ti interdigital electrodes.
Third time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, adjustment underlayer temperature are room
Temperature is passed through argon flow amount with the flow of 24sccm, and holding air pressure is 3.8Pa, with the sputtering power of 40W, Ti layers of sputtering 40s,
Au layers of sputtering 120s.
5) by two corners of Au/Ti interdigital electrodes using mechanical force by lastblock diameter be about 0.8mm In electrodes simultaneously
It is connected with Cu lines, as Ga2O3Two electrodes of film are to get flexible solar blind light electric explorer.
Flexible solar blind light electric explorer made from the present embodiment is as shown in Figure 1.
Fig. 2 gives Ga2O3Flexible solar blind light electric explorer is in 1mW/cm2254nm ultraviolet lights under, be not bent, to
It is upper to be bent and be bent downwardly the I-V curve measured in the case of three kinds, show that bending is not very big on the influence of film photoelectric performance.
It is 1000 μ W/cm that Fig. 3, which gives in 5V biass and light intensity,2254nm illumination under measured by continuous lamp pass of turning on light
I-t curves.By being further fitted, we learn that the detector in 5V biass and light intensity is 1mW/cm2254nm illumination
Under rising response time τrAnd die-away time τdRespectively 137ms and 83ms.
Embodiment 2
The present embodiment provides a kind of preparation methods of blind detector of amorphous flexible day, include the following steps：
1) using Si as substrate, it is put into settling chamber, uses the method for magnetron sputtering to grow one layer over the substrate for the first time
Sr3Al2O6Film；
For the first time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, adjustment underlayer temperature to 500
DEG C, argon gas is passed through with the flow of 24sccm, holding air pressure is 0.35Pa, with the sputtering power of 90W, sputters 2h.
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows one layer of Ga2O3Film；
Second use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, adjustment underlayer temperature are 500
DEG C, argon gas is passed through with the flow of 24sccm, holding air pressure is 0.8Pa, with the sputtering power of 80W, sputters 2h.
3) sample made from step 2) is put into deionized water, after standing 6h, takes out sample at a slant with tweezers, wait for
Ga2O3Film upper surface moisture is micro- dry, is put back in deionized water slowly tilting, Ga2O3Film can be detached from Si substrates and swim in
It on the water surface, spontaneously dries, obtains self-supporting Ga2O3Film.
4) by Ga2O3Film is transferred on flexible substrate PET, with the interdigital electrode mask plate (specification of hollow out：Refer to long 2800 μ
M, 200 μm of finger beam refer to 200 μm of spacing) block Ga2O3Film uses the method elder generation splash-proofing sputtering metal Ti of magnetron sputtering for the third time, then
Splash-proofing sputtering metal Au is to get Au/Ti interdigital electrodes.
Third time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, adjustment underlayer temperature are room
Temperature is passed through argon flow amount with the flow of 24sccm, and holding air pressure is 3.8Pa, with the sputtering power of 40W, Ti layers of sputtering 40s,
Au layers of sputtering 120s.
5) by two corners of Au/Ti interdigital electrodes using mechanical force by lastblock diameter be about 0.8mm In electrodes simultaneously
It is connected with Cu lines, as Ga2O3Two electrodes of film are to get flexible solar blind light electric explorer.
Fig. 4 gives amorphous Ga2O3Flexible solar blind light electric explorer is respectively 0.5mW/cm in intensity of illumination2And 1mW/cm2
254nm ultraviolet lights under, and the I-V curve that is measured in the case of dark three kinds shows that the day of the amorphous flexible detector is blind
Characteristic.
It is 2mW/cm that Fig. 5, which gives in 5V biass and light intensity,2254nm illumination under measured by recycling lamp pass of turning on light twice
I-t curves.
Comparative example 1
This comparative example is covered with Sr using 1 step 2) of embodiment is obtained3Al2O6Film and Ga2O3The Si substrates of film, directly
It is used to prepare day blind detector；Replace " by Ga2O3Film is transferred on flexible substrate PET "；Subsequent operation and 1 phase of embodiment
With (i.e. step 4 is " by Ga2O3Film is transferred on flexible substrate PET " after operation and step 5).
Fig. 6 be this comparative example made from day blind detector I-V diagram.Compared with Fig. 2, in dark and to 365nm illumination
In the case of, current value all very littles.In the case of identical 254nm illumination, photoelectric current is but flexible also without prodigious decline
Ga2O3Day, blind detector (embodiment 1) can be widely used in wearable photoelectron and other flexible optoelectronic fields.
Comparative example 2
This comparative example uses Al2O3For substrate, Sr is grown using 1 identical method of embodiment3Al2O6Film and Ga2O3It is thin
Film, then Sr will be covered3Al2O6Film and Ga2O3The Al of film2O3Substrate, which is directly used in, prepares day blind detector；Subsequent operation and reality
It is identical to apply example 1.
Fig. 7 be this comparative example made from day blind detector I-V diagram.Compared with Fig. 2, in dark and to 365nm illumination
In the case of, current value all very littles.In the case of identical 254nm illumination, photoelectric current is but flexible also without prodigious decline
Ga2O3Day, blind detector (embodiment 1) can be widely used in wearable photoelectron and other flexible optoelectronic fields.
Although above having used general explanation, specific implementation mode and experiment, the present invention is made to retouch in detail
It states, but on the basis of the present invention, it can be made some modifications or improvements, this is apparent to those skilled in the art
's.Therefore, these modifications or improvements without departing from theon the basis of the spirit of the present invention, belong to claimed
Range.
Claims (10)
1. a kind of preparation method of flexibility day blind detector, which is characterized in that include the following steps：
1) method of magnetron sputtering is used to grow one layer of Sr on substrate for the first time3Al2O6Film；
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows one layer of Ga2O3Film；
3) into the water by sample made from step 2), it is dipped to Sr3Al2O6After film is dissolved, substrate and Ga are detached2O3It is thin
Film obtains Ga2O3Film；
4) by Ga2O3Film is transferred on flexible substrate PET, and Ga is blocked with the interdigital electrode mask plate of hollow out2O3Film, third time
Using the method elder generation splash-proofing sputtering metal Ti of magnetron sputtering, then splash-proofing sputtering metal Au is to get the Au/Ti interdigital electrodes；
5) two In electrodes are connected in the Au/Ti interdigital electrodes to get blind detector of flexible day.
2. preparation method according to claim 1, which is characterized in that the substrate is selected from SrTiO3、Al2O3, in single crystalline Si
It is one or more.
3. preparation method according to claim 1 or 2, which is characterized in that the thickness of the metal Ti is 30~50nm, institute
The thickness ratio for stating metal Ti and metal Au is 1:2~4；
Preferably, it is 1 that the thickness of the metal Ti, which is the thickness ratio of 35~45nm, the metal Ti and metal Au,:2~3；
It is highly preferred that the thickness ratio that the thickness of the metal Ti is 40nm, the metal Ti and metal Au is 1:2~3；.
4. according to claims 1 to 3 any one of them preparation method, which is characterized in that magnetron sputtering described in step 1)
Actual conditions are：
Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and underlayer temperature is adjusted to 400~800 DEG C, with 20~25sccm's
Flow is passed through argon gas, and holding air pressure is 0.2~0.45Pa, by the sputtering power of 70~100W, sputters 1.5~3h；
Preferably, back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust underlayer temperature to 500~750 DEG C, with 22~
The flow of 24sccm is passed through argon gas, and holding air pressure is 0.3~0.4Pa, by the sputtering power of 85~95W, sputters 1.8~2.2h.
5. according to Claims 1 to 4 any one of them preparation method, which is characterized in that magnetron sputtering described in step 2)
Actual conditions are：
Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and underlayer temperature is adjusted to 400~800 DEG C, with 20~25sccm's
Flow is passed through argon gas, and holding air pressure is 0.6~1Pa, by the sputtering power of 70~100W, sputters 1.5~3h；
Preferably, back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust underlayer temperature to 500~750 DEG C, with 22~
The flow of 24sccm is passed through argon gas, and holding air pressure is 0.7~0.9Pa, by the sputtering power of 85~95W, sputters 1.8~2.2h.
6. according to Claims 1 to 5 any one of them preparation method, which is characterized in that the Au/Ti interdigital electrodes mask plate
A length of 2600~3000 μm of finger, finger beam be 180~220 μm, refer to spacing be 180~220 μm；
Preferably, described to refer to a length of 2800 μm, finger beam is 200 μm, and it is 200 μm to refer to spacing.
7. according to claim 1~6 any one of them preparation method, which is characterized in that magnetron sputtering described in step 4)
Actual conditions are：
Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and it is room temperature to adjust underlayer temperature, it is logical with the flow of 20~25sccm
Enter argon gas, holding air pressure is 3~5Pa, presses the sputtering power of 30~50W, Ti layers of sputtering time is 30~50s, and Au layers splash
It is 100~140s to penetrate the time；
Preferably, back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and it is room temperature to adjust underlayer temperature, with 22~24sccm's
Flow is passed through argon gas, and holding air pressure is 3.5~4.0Pa, presses the sputtering power of 35~45W, Ti layers of sputtering time for 35~
45s, Au layers of sputtering time is 110~130s.
8. according to claim 1~7 any one of them preparation method, which is characterized in that described in step 3) separation be specially：
Ga will be covered with2O3The substrate of film takes out the water surface, waits for Ga2O3Film upper surface does not have moisture, Ga2O3There is water between film and substrate
It in the case of point, then slowly tilts and puts back in water, you can separation substrate and Ga2O3Film；
And/or step 5) is specially：After removing the interdigital electrode mask plate, using mechanical force in the Au/Ti interdigital electrodes
Two corners on press upper a diameter of 0.5~1.0mm In electrodes；The In electrodes reconnect copper wire, you can.
9. according to claim 1~8 any one of them preparation method, which is characterized in that include the following steps：
1) using single crystalline Si as substrate, the method for magnetron sputtering is used to grow one layer of Sr over the substrate for the first time3Al2O6Film；
For the first time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust substrate
Temperature is passed through argon gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.3~0.4Pa, by 85~95W's
Sputtering power sputters 1.8~2.2h；
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows one layer of Ga2O3Film；
Second use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust substrate
Temperature is passed through argon gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.7~0.9Pa, by 85~95W's
Sputtering power sputters 1.8~2.2h；
3) into the water by sample made from step 2), it is dipped to Sr3Al2O6After film is dissolved, substrate and Ga are detached2O3It is thin
Film obtains Ga2O3Film；
4) by Ga2O3Film is transferred on flexible substrate PET, and Ga is blocked with the interdigital electrode mask plate of hollow out2O3Film, third time
Using the method elder generation splash-proofing sputtering metal Ti of magnetron sputtering, then splash-proofing sputtering metal Au is to get Au/Ti interdigital electrodes；
Third time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust substrate
Temperature is room temperature, is passed through argon gas with the flow of 22~24sccm, holding air pressure is 3.5~4.0Pa, by the sputtering work(of 35~45W
Rate, Ti layers of sputtering time is 35~45s, and Au layers of sputtering time is 110~130s；
5) after removing the interdigital electrode mask plate, using mechanical force by upper on two corners of the Au/Ti interdigital electrodes
The In electrodes of a diameter of 0.5~1.0mm；The In electrodes reconnect copper wire to get blind detector of flexible day.
10. blind detector of flexible day made from any one of claim 1~9 preparation method.
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