CN108660417A - A kind of self-supporting Ga2O3Film and preparation method thereof - Google Patents
A kind of self-supporting Ga2O3Film and preparation method thereof Download PDFInfo
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- CN108660417A CN108660417A CN201810549907.1A CN201810549907A CN108660417A CN 108660417 A CN108660417 A CN 108660417A CN 201810549907 A CN201810549907 A CN 201810549907A CN 108660417 A CN108660417 A CN 108660417A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The present invention relates to a kind of self-supporting Ga2O3Film and preparation method thereof, the preparation method are specially：One layer of Sr is grown on substrate3Al2O6After film, then in the Sr3Al2O6One layer of Ga is grown on film2O3Film；Into the water by the substrate for being covered with double-layer films, Sr is waited for3Al2O6After Film Fractionation, substrate and Ga are detached2O3Film is to get self-supporting Ga2O3Film.Preparation method process controllability of the present invention is strong, easy to operate；Self-supporting Ga obtained by the present invention2O3Film surface densification, thickness stable uniform, can large area prepare, it is reproducible.
Description
Technical field
The present invention relates to technical field of semiconductor material preparation, and in particular to a kind of self-supporting Ga2O3Film and its preparation side
Method.
Background technology
Ga2O3Energy gap be about 4.9eV, be a kind of novel super semiconductor material with wide forbidden band.Due to Ga2O3Taboo
Bandwidth is just fallen in day blind ultraviolet band (200-280nm), is not interfered by extraneous sunlight, solar blind ultraviolet light signal detection
Sensitivity is high, works in the day blind Ultraviolet Communication almost zero error of this wave band, has in military, space flight and aviation extensive
Using.Ga2O3Breakdown field it is powerful (up to 8MV/cm), Bali adds the figure of merit big, is the ideal material of field-effect transistor.Meanwhile
Ga2O3It also is used as the devices such as transparent conductive electrode, information-storing device, gas sensor, LED substrate.
It is flexible, light, flexible, flexible and transparent with rise of the wearable electronic in new electronic technology
2D materials be applied and develop in new electronic technology, including wearable energy collecting system, foldable electricity
Sub- equipment, curved screens electronic equipment, soft portable equipment and package display.It will be flexible, flexible, scalable, sensitive
Solar blind is combined with other bending apparatus, will become a kind of fashion trend.Flexible UV photodetector can be applied to just
Take formula electronic equipment, display equipment etc..
In order to realize Ga2O3Application of the film on flexible device, scientific research personnel's directly low-temperature epitaxy on flexible substrates
Ga2O3Method obtain amorphous Ga2O3Fexible film.But non-crystalline material high temperature or other adverse circumstances (such as strong acidity or
Alkaline environment) in be easy to happen material character variation, cause device performance unstable.If can both have been obtained by a kind of mode
Obtain flexible, independent Ga2O3Film realizes the preparation of associated flexible device, and can ensure high crystallinity, makes device severe
Performance is stablized in environment.Meanwhile according to application demand, to the Ga of high crystalline2O3Film carries out shearing and further recombination, will
It is assembled in flexible substrate or rigid substrate, realizes its application in the devices.
Invention content
Present invention aims at propose a kind of utilization water-soluble material Sr3Al2O6It is prepared for self-supporting Ga2O3The side of film
Method is available from support Ga2O3Film.
The self-supporting Ga2O3The preparation method of film is specially：One layer of Sr is grown on substrate3Al2O6After film, then
The Sr3Al2O6One layer of Ga is grown on film2O3Film；Into the water by the substrate for being covered with double-layer films, Sr is waited for3Al2O6Film
After dissolving, substrate and Ga are detached2O3Film is to get self-supporting Ga2O3Film.
Preferably, the Sr3Al2O6The thickness of film is the Ga2O30.5~2 times of the thickness of film；When described
Sr3Al2O6The thickness of film is the Ga2O3At 0.5~1 times of the thickness of film, be more easy to save dissolution time, obtained from
Support Ga2O3Film integrity and structural stability are more excellent.
The present invention is further using the obtained self-supporting Ga following preparation method2O3Film, the specific steps are：
1) method of magnetron sputtering is used to grow Sr on substrate for the first time3Al2O6Film；
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows Ga2O3Film；
3) into the water by sample made from step 2), it is dipped to Sr3Al2O6After film is dissolved, substrate and Ga are detached2O3
Film is to get self-supporting Ga2O3Film.
Film produced by the present invention can be individually present in the case where no substrate relies on.It as needed can be to propping up certainly
Support Ga2O3Film is sheared and is recombinated.It can also be further prepared into Ga by shifting on flexible substrates2O3Bendable
Device.
Wherein, step 2) grows Ga2O3Film and finally obtained product self-supporting Ga2O3The consistency of thickness of film.
The present invention can control the Ga according to actual needs2O3The thickness of film.
The present invention selects the substance for being not involved in reaction and stable structure as substrate, such as SrTiO3、Al2O3, single crystalline Si
Deng；Particularly preferably use single crystalline Si.
In order to which the Sr is effectively ensured3Al2O6Film and the Ga2O3The thickness and Sr of film3Al2O6The dissolving of film
Performance and Ga2O3The comprehensive performance of film.The present invention advanced optimizes the sputtering condition and sputtering time of magnetron sputtering.
Wherein, the actual conditions of magnetron sputtering described in step 1) are：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10- 3Pa, and adjust underlayer temperature to 400~800 DEG C, argon gas is passed through with the flow of 20~25sccm, keep air pressure be 0.2~
0.45Pa sputters 0.5~3h by the sputtering power of 70~100W.
When the air pressure is 0.3~0.4Pa, more conducively Sr3Al2O6The subsequent dissolution of film；When air pressure is 0.35Pa
When, Sr3Al2O6The water soluble characteristic of film is best.
Preferably, back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust underlayer temperature to 500~750 DEG C, with
The flow of 22~24sccm is passed through argon gas, and holding air pressure is 0.3~0.4Pa, presses the sputtering power of 85~95W, sputter 1.8~
2.2h。
It is furthermore preferred that the actual conditions of the magnetron sputtering are：Back end vacuum is evacuated to 1 × 10-4Pa, and adjust underlayer temperature
To 500 DEG C~750 DEG C, argon gas is passed through with the flow of 25sccm, holding air pressure is 0.35Pa, by the sputtering power of 90W, sputtering
2h。
Wherein, the actual conditions of magnetron sputtering described in step 2) are：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10- 3Pa, and underlayer temperature is adjusted to 400~800 DEG C, argon gas is passed through with the flow of 20~25sccm, holding air pressure is 0.6~1Pa,
By the sputtering power of 70~100W, 0.5~3h is sputtered；
Preferably, back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust underlayer temperature to 500~750 DEG C, with
The flow of 22~24sccm is passed through argon gas, and holding air pressure is 0.7~0.9Pa, presses the sputtering power of 85~95W, sputter 1.8~
2.2h；
Most preferably, the actual conditions of the magnetron sputtering are：Back end vacuum is evacuated to 1 × 10-4Pa, and adjust underlayer temperature
To 500 DEG C~750 DEG C, argon gas is passed through with the flow of 25sccm, holding air pressure is 0.8Pa, by the sputtering power of 80W, sputters 2h.
Under the air pressure of adaptation, argon gas forms Ar ions in magnetic control, and Ar ions impact gallium oxide target in magnetic field environment,
It sputters gallium oxide molecule deposition and forms gallium oxide film on substrate.
Wherein, described detach is specially：Ga will be covered with2O3The substrate of film takes out the water surface, waits for Ga2O3Film upper surface does not have
There are moisture, Ga2O3Between film and substrate also have moisture in the case of, then slowly tilt put back in water, you can separation substrate and
Ga2O3Film.
The water is commonly used in the art, does not influence the water of reaction, such as deionized water.
Wherein, the substrate further includes cleaning before use；
Preferably, described clean is specially：Substrate is dipped into successively each ultrasonic 10 in acetone, ethyl alcohol, deionized water~
20 minutes, taking-up was fully rinsed with deionized water again, dry, for use.
The present invention provides a kind of preferred embodiment, and the preparation method includes the following steps：
1) using single crystalline Si as substrate, the method for magnetron sputtering is used to grow Sr over the substrate for the first time3Al2O6Film；
For the first time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust
Underlayer temperature is passed through inert gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.3~0.4Pa, by 85
The sputtering power of~95W sputters 1.8~2.2h；
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows Ga2O3Film；
Second use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust
Underlayer temperature is passed through inert gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.7~0.9Pa, by 85
The sputtering power of~95W sputters 1.8~2.2h；
3) into the water by sample made from step 2), it is dipped to Sr3Al2O6After film is dissolved, substrate and Ga are detached2O3
Film to get.
Preparation process of the present invention is simple, and substrate used is commercial product；For the present invention in preparation process, use is commercialized
The water-soluble layer Sr of preparation method Grown by Magnetron Sputtering3Al2O6Film and Ga2O3Film, process controllability is strong, easy to operate, gained film
Surface compact, thickness stable uniform, can large area prepare, it is reproducible.
Self-supporting Ga prepared by the present invention2O3Film, area is big, and flexible is good, facilitates shearing and recombination, can be just
It takes to integrate in formula, flexibility and wearable device and prepares high-frequency high-power field-effect transistor, solar blind ultraviolet detector, transparent leads
The new devices such as electrode, information-storing device, gas sensor have huge potential using value.
Description of the drawings
Fig. 1 is to prepare self-supporting Ga2O3The flow chart of film；
Fig. 2 is self-supporting Ga made from embodiment 22O3Film；
Fig. 3 is self-supporting Ga made from embodiment 22O3Film is shifted respectively on flexible substrate PET and alumina substrate
Pictorial diagram；
Fig. 4 is self-supporting Ga made from embodiment 22O3The ultra-violet absorption spectrum of film, the illustration in figure are the forbidden bands calculated
Width figure；
Fig. 5 is self-supporting Ga made from embodiment 22O3The STM of film schemes；
Fig. 6 is self-supporting Ga made from embodiment 22O3Film is the Ga that x-ray photoelectron spectroscopy is tested2O3XPS
Spectrogram；
Fig. 7, which is the growth of comparative example 1~2, Sr3Al2O6Film and Ga2O3The Si substrates of film are put into before and after alcohol or acetone
Comparison diagram；
Fig. 8 is sample solute effect comparison diagram made from comparative example 4~9；
Fig. 9 is the effect contrast figure of the 30s into the water of sample made from embodiment 2 and comparative example 5~9.
Specific implementation mode
The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention..
Following examples are purchased using Si in Hefei Yuan Jing tech materials Co., Ltd, and size is：10mm×12mm×
0.5mm。
Si is using preceding needing specifically to clean, specially：Substrate is dipped into successively each super in acetone, ethyl alcohol, deionized water
Sound 15 minutes, is rinsed with deionized water again after taking-up, finally uses dry N2Air-blowing is dry, for use.
Embodiment 1
The present embodiment provides a kind of self-supporting Ga2O3The preparation method of film, includes the following steps：
1) using single crystalline Si as substrate, it is put within the deposition chamber, uses the method for magnetron sputtering to give birth to over the substrate for the first time
Long Sr3Al2O6Film；
For the first time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, and adjust underlayer temperature extremely
500 DEG C, argon gas is passed through with the flow of 24sccm, keeps air pressure PAr=0.35Pa sputters 2h with the sputtering power of 90W.
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows Ga2O3Film；
Second use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, and adjust underlayer temperature extremely
500 DEG C, argon gas is passed through with the flow of 24sccm, guarantee air pressure is PAr=0.8Pa sputters 2h with the sputtering power of 80W.
3) sample made from step 2) is put into deionized water, stands 6h, takes out sample at a slant with tweezers, wait for Ga2O3
Film upper surface does not have moisture, Ga2O3Still there is moisture between film and substrate, then slowly tilts and put back in deionized water, Ga2O3
Film can be detached from Si substrates and swim on the water surface to get self-supporting Ga2O3Noncrystal membrane.
Self-supporting Ga made from the present embodiment2O3Film is armorphous.
Shown in Fig. 1, self-supporting Ga is prepared2O3The flow chart of film.
Embodiment 2
The present embodiment provides a kind of self-supporting Ga2O3The preparation method of film, includes the following steps：
1) using single crystalline Si as substrate, it is put within the deposition chamber, uses the method for magnetron sputtering to give birth to over the substrate for the first time
Long Sr3Al2O6Film；
For the first time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, and adjust underlayer temperature extremely
750 DEG C, argon gas is passed through with the flow of 24sccm, keeps air pressure PAr=0.35Pa sputters 2h with the sputtering power of 90W.
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows Ga2O3Film；
Second use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 1 × 10-4Pa, and adjust underlayer temperature extremely
750 DEG C, argon gas is passed through with the flow of 25sccm, keeps air pressure PAr=0.8Pa sputters 2h with the sputtering power of 80W.
3) sample made from step 2) is put into deionized water, stands 6h, takes out sample at a slant with tweezers, wait for Ga2O3
Film upper surface does not have moisture, Ga2O3Still there is moisture between film and substrate, then slowly tilts and put back in deionized water, Ga2O3
Film can be detached from Si substrates and swim on the water surface to get self-supporting Ga2O3Noncrystal membrane.
Fig. 2 is self-supporting Ga made from the present embodiment2O3Film.
Fig. 3 is respectively by self-supporting Ga2O3Film shifts the pictorial diagram on flexible substrate PET and alumina substrate.
Fig. 4 is self-supporting Ga made from this implementation2O3The ultra-violet absorption spectrum of film, the illustration in figure are the forbidden bands calculated
Width figure；
Fig. 5 is self-supporting Ga made from the present embodiment2O3The STM of film schemes；
Fig. 6 is self-supporting Ga made from the present embodiment2O3Film is the Ga that x-ray photoelectron spectroscopy is tested2O3's
XPS spectrum figure；
Comparative example 1~2
This comparative example provides a kind of Ga2O3The preparation method of film, and differing only in for embodiment 2, respectively by step 3)
It is middle that water is replaced with into alcohol and acetone；
As shown in fig. 7, growth is had Sr by step 3)3Al2O6Film and Ga2O3Before the Si substrates of film are put into alcohol or acetone
Comparison diagram afterwards；It can be seen that Sr3Al2O6Film does not have any change, Sr3Al2O6Film fails to dissolve, substrate and Ga2O3Film can not
Separation.
Comparative example 3
This comparative example provides a kind of Ga2O3The preparation method of film, and differing only in for embodiment 2, by water in step 3)
Replace with the ethyl alcohol that percent by volume is 70%；
Sr in step 3)3Al2O6Film Fractionation is very slow；Sr3Al2O6Film fails to be completely dissolved.
Comparative example 4~9
This comparative example provides a kind of Ga2O3The preparation method of film, with differing only in for embodiment 2, in step 1), lining
The air pressure of bottom temperature and argon gas is different；
1) underlayer temperature is 750 DEG C, and being passed through argon gas makes its air pressure remain P respectivelyAr=0.5Pa；
2) underlayer temperature is 750 DEG C, and being passed through argon gas makes its air pressure remain P respectivelyAr=0.6Pa；
3) underlayer temperature is 800 DEG C, and being passed through argon gas makes its air pressure remain P respectivelyAr=0.5Pa；
4) underlayer temperature is 750 DEG C, and being passed through argon gas makes its air pressure remain P respectivelyAr=0.8Pa；
5) underlayer temperature is 800 DEG C, and being passed through argon gas makes its air pressure remain P respectivelyAr=0.8Pa；
4~9 obtained sample of comparative example is put into after deionized water fully dissolves, is compared；As described in Figure 8, from do to
The right side is followed successively by：Blank single crystal Si substrate, comparative example 4~9；As can be seen, the Sr in comparative example 4~93Al2O6Film only compares
Example 4 is partly dissolved, remaining comparative example is all undissolved.
After embodiment 2,5~9 obtained sample of comparative example are put into deionized water dissolving 30s, compared after taking-up；Such as figure
Shown in 9, only embodiment 2 has apparent dissolving sign.
Although above having used general explanation, specific implementation mode and experiment, the present invention is made to retouch in detail
It states, but on the basis of the present invention, it can be made some modifications or improvements, this is apparent to those skilled in the art
's.Therefore, these modifications or improvements without departing from theon the basis of the spirit of the present invention, belong to claimed
Range.
Claims (10)
1. a kind of self-supporting Ga2O3The preparation method of film, which is characterized in that grow one layer of Sr on substrate3Al2O6After film,
Again in the Sr3Al2O6One layer of Ga is grown on film2O3Film；Into the water by the substrate for being covered with double-layer films, Sr is waited for3Al2O6
After Film Fractionation, substrate and Ga are detached2O3Film is to get self-supporting Ga2O3Film.
2. preparation method according to claim 1, which is characterized in that the preparation method comprises the following steps：
1) method of magnetron sputtering is used to grow Sr on substrate for the first time3Al2O6Film；
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows Ga2O3Film；
3) into the water by sample made from step 2), it is dipped to Sr3Al2O6After film is dissolved, substrate and Ga are detached2O3It is thin
Film is to get self-supporting Ga2O3Film.
3. preparation method according to claim 1 or 2, which is characterized in that the substrate is selected from SrTiO3、Al2O3, monocrystalline
It is a kind of in Si.
4. according to claims 1 to 3 any one of them preparation method, which is characterized in that the Sr3Al2O6The thickness of film is
The Ga2O30.5~2 times of the thickness of film；Preferably 0.5~1 times.
5. according to claim 2~4 any one of them preparation method, which is characterized in that magnetron sputtering described in step 1)
Actual conditions are：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust underlayer temperature to 400~800 DEG C, with 20~
The flow of 25sccm is passed through argon gas, and holding air pressure is 0.2~0.45Pa, by the sputtering power of 70~100W, sputters 0.5~3h；
Preferably, the actual conditions of the magnetron sputtering are：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust substrate
Temperature is passed through argon gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.3~0.4Pa, by 85~95W's
Sputtering power sputters 1.8~2.2h.
6. according to claim 2~5 any one of them preparation method, which is characterized in that magnetron sputtering described in step 2)
Actual conditions are：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust underlayer temperature to 400~800 DEG C, with 20~
The flow of 25sccm is passed through inert gas, and holding air pressure is 0.6~1Pa, by the sputtering power of 70~100W, sputters 0.5~3h；
Preferably, back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust underlayer temperature to 500~750 DEG C, with 22~
The flow of 24sccm is passed through inert gas, and holding air pressure is 0.7~0.9Pa, presses the sputtering power of 85~95W, sputter 1.8~
2.2h。
7. according to claim 1~6 any one of them preparation method, which is characterized in that the separation is specially：It will be covered with
Ga2O3The substrate of film takes out the water surface, waits for Ga2O3Film upper surface does not have moisture, Ga2O3There is moisture between film and substrate, then
It slowly tilts and puts back in water, you can separation substrate and Ga2O3Film.
8. according to claim 1~7 any one of them preparation method, which is characterized in that the substrate further includes before use
Cleaning；
Preferably, described clean is specially：Substrate is dipped into in acetone, ethyl alcohol, deionized water each ultrasonic 10~20 points successively
Clock, taking-up are fully rinsed with deionized water again, dry, for use.
9. according to claim 1~8 any one of them preparation method, which is characterized in that include the following steps：
1) using single crystalline Si as substrate, the method for magnetron sputtering is used to grow Sr over the substrate for the first time3Al2O6Film；
For the first time use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust substrate
Temperature is passed through inert gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.3~0.4Pa, by 85~
The sputtering power of 95W sputters 1.8~2.2h；
2) in Sr3Al2O6On film, second of method using magnetron sputtering grows Ga2O3Film；
Second use the actual conditions of magnetron sputtering for：Back end vacuum is evacuated to 0.1 × 10-4~1 × 10-3Pa, and adjust substrate
Temperature is passed through inert gas to 500~750 DEG C, with the flow of 22~24sccm, and holding air pressure is 0.7~0.9Pa, by 85~
The sputtering power of 95W sputters 1.8~2.2h；
3) into the water by sample made from step 2), it is dipped to Sr3Al2O6After film is dissolved, substrate and Ga are detached2O3It is thin
Film to get.
10. self-supporting Ga made from any one of claim 1~9 preparation method2O3Film.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109628900A (en) * | 2018-12-06 | 2019-04-16 | 北京镓族科技有限公司 | A kind of Sr prepared using magnetron sputtering3Al2O6Film and its method |
| CN109755341A (en) * | 2018-12-06 | 2019-05-14 | 北京镓族科技有限公司 | Based on β-Ga2O3The solar blind UV electric explorer of/FTO hetero-junctions and its preparation |
| CN111058089A (en) * | 2019-12-18 | 2020-04-24 | 西安交通大学 | Preparation method of sandwich structure dielectric energy storage composite film |
| CN111540826A (en) * | 2020-04-22 | 2020-08-14 | 西安交通大学 | Flexible functional film based on composite transition layer and preparation method thereof |
| CN111733452A (en) * | 2020-04-30 | 2020-10-02 | 深圳先进技术研究院 | Flexible self-supporting single crystal magnetic Fe3O4Preparation of thin film material, thin film material and application thereof, and single crystal structure |
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| CN109628900A (en) * | 2018-12-06 | 2019-04-16 | 北京镓族科技有限公司 | A kind of Sr prepared using magnetron sputtering3Al2O6Film and its method |
| CN109755341A (en) * | 2018-12-06 | 2019-05-14 | 北京镓族科技有限公司 | Based on β-Ga2O3The solar blind UV electric explorer of/FTO hetero-junctions and its preparation |
| CN109755341B (en) * | 2018-12-06 | 2020-08-14 | 北京镓族科技有限公司 | Based on β -Ga2O3Solar blind ultraviolet photoelectric detector of/FTO heterojunction and preparation thereof |
| CN111058089A (en) * | 2019-12-18 | 2020-04-24 | 西安交通大学 | Preparation method of sandwich structure dielectric energy storage composite film |
| CN111540826A (en) * | 2020-04-22 | 2020-08-14 | 西安交通大学 | Flexible functional film based on composite transition layer and preparation method thereof |
| CN111733452A (en) * | 2020-04-30 | 2020-10-02 | 深圳先进技术研究院 | Flexible self-supporting single crystal magnetic Fe3O4Preparation of thin film material, thin film material and application thereof, and single crystal structure |
| CN111733452B (en) * | 2020-04-30 | 2021-09-21 | 深圳先进技术研究院 | Flexible self-supporting single crystal magnetic Fe3O4Preparation of thin film material, thin film material and application thereof, and single crystal structure |
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