CN108754442A - A kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film - Google Patents
A kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film Download PDFInfo
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- CN108754442A CN108754442A CN201810560530.XA CN201810560530A CN108754442A CN 108754442 A CN108754442 A CN 108754442A CN 201810560530 A CN201810560530 A CN 201810560530A CN 108754442 A CN108754442 A CN 108754442A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 241000549556 Nanos Species 0.000 title claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052786 argon Inorganic materials 0.000 claims abstract description 5
- 230000003247 decreasing effect Effects 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 238000005477 sputtering target Methods 0.000 claims abstract description 4
- 239000013077 target material Substances 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention discloses a kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film, includes the following steps：Substrate is cleaned, the greasy dirt and impurity of substrate surface are removed；Using magnetron sputtering apparatus, using ZnS targets and ZnO target as sputtering target material, the target stand of ZnS targets and ZnO target makes the extended line of ZnS targets and ZnO target intersect at a point, substrate is placed in the crosspoint of ZnS targets and ZnO target horizontal by 45o angles；S3, it is passed through argon working gas, makes ZnS target sputtering powers 45W, ZnO target sputtering power 150W first, carry out cosputtering 25min；Then ZnS targets sputtering power increases to 100W, ZnO target sputtering power is decreased to 80W and carries out cosputtering 3min；Finally closing ZnO target, ZnS target sputtering powers increase to 150W, sputter 2min, obtain ZnS clading ZnO nano nucleocapsid laminated films；ZnS energy gaps and ZnO are very close, will not differ the problem for causing membrane stress excessive too much due to lattice constant between the two, ultimately form the compound system of a binary.
Description
Technical field
The present invention relates to a kind of preparation methods of ZnS clading ZnO nanos nucleocapsid laminated film.
Background technology
In recent years, since the pollution of environment is increasingly severe, country also accelerates the improvement of this respect, traditional power generation side
Formula is increasingly limited by country, and thing followed cleaning, free of contamination solar energy resources portion in photovoltaic market are got over
Come bigger.
The utilization of copper-zinc-tin-sulfur film solar cell are also gradually increased at present.ZnO is a kind of broad stopband half
Conductor material, naturally N-shaped is conductive, possesses good photoelectric properties, is highly suitable as the window material of solar cell.
ZnO would generally be coated, however the lattice constant of current covering material and ZnO difference is too many, causes membrane stress mistake
The problems such as big.
Invention content
The purpose of the present invention is to provide a kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film, the party
Method coats ZnO with ZnS, improves covered effect, promotes the crystalline quality of film.
The technical solution adopted by the present invention to solve the technical problems is：
A kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film, includes the following steps：
S1, cleaning substrate, remove the greasy dirt and impurity of substrate surface；
S2, using magnetron sputtering apparatus, using ZnS targets and ZnO target as sputtering target material, the target stand of ZnS targets and ZnO target is and horizontal plane
In 45o angles, the extended line of ZnS targets and ZnO target is made to intersect at a point, substrate is placed in the crosspoint of ZnS targets and ZnO target；
S3, it is passed through argon working gas, makes ZnS target sputtering powers 45W, ZnO target sputtering power 150W first, carry out cosputtering
25min；Then ZnS targets sputtering power increases to 100W, ZnO target sputtering power is decreased to 80W and carries out cosputtering 3min；Finally close
Close ZnO target, ZnS target sputtering powers increase to 150W, sputter 2min, obtain ZnS clading ZnO nano nucleocapsid laminated films.
Further, the ZnS clading ZnO nano nucleocapsid laminated films that step S3 is obtained are placed in vacuum annealing furnace,
It anneals 3 hours at a temperature of 500 DEG C.
The invention has the advantages that ZnS is also semiconductor material with wide forbidden band, energy gap is very close with ZnO, therefore
The two is doped carries out ZnS cladding ZnO again, membrane stress will not be caused excessive too much since lattice constant differs between the two
The problem of, ultimately form the compound system of a binary；The target of two cosputterings is relatively independent, the change that each target passes through technique
Change and its sputter rate can be changed；Preparation process is simple, and repeatability, controllability are stronger, and the preparation of other cladding films can be carried
For reference function；Vacuum annealing advanced optimizes coating function, and improves the crystalline quality of film；It can be coated with difference as needed
ZnS coats the ZnO nano nucleocapsid laminated film of concentration.
Specific implementation mode
The present invention provides a kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film, includes the following steps：
S1, cleaning substrate, remove the greasy dirt and impurity of substrate surface；
S2, using magnetron sputtering apparatus, using ZnS targets and ZnO target as sputtering target material, the target stand of ZnS targets and ZnO target is and horizontal plane
In 45o angles, the extended line of ZnS targets and ZnO target is made to intersect at a point, substrate is placed in the crosspoint of ZnS targets and ZnO target；
S3, reach 4.0*10 when Chamber vacuum degree-4When Pa, it is passed through argon working gas, argon ion bombardment ZnS targets and ZnO target,
The pre-sputtering for carrying out 10min achievees the purpose that activate target and removes oxide on surface；After pre-sputtering, make ZnS targets first
Sputtering power 45W, ZnO target sputtering power 150W carry out cosputtering 25min；Then ZnS targets sputtering power increases to 100W, ZnO
Target sputtering power is decreased to 80W and carries out cosputtering 3min；Finally close ZnO target, ZnS target sputtering powers increase to 150W, sputtering
2min obtains ZnS clading ZnO nano nucleocapsid laminated films.
Preferably, the ZnS clading ZnO nano nucleocapsid laminated films that step S3 is obtained are placed in vacuum annealing
Stove is annealed 3 hours at a temperature of 500 DEG C.
During sputtering thin film, first based on ZnO, supplemented by ZnS, namely start when ZnO sputter rate it is larger,
The ZnO deposited on substrate is more；At the end of finally fast, based on ZnS, claddings of the ZnS to ZnO is realized.
The above described is only a preferred embodiment of the present invention, being not intended to limit the present invention in any form；Appoint
What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above
Method and technology contents make many possible changes and modifications to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations
Apply example.Therefore, every content without departing from technical solution of the present invention, according to the technical essence of the invention does above example
Any simple modification, equivalent replacement, equivalence changes and modification, still fall within technical solution of the present invention protection in the range of.
Claims (2)
1. a kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film, which is characterized in that include the following steps：
S1, cleaning substrate, remove the greasy dirt and impurity of substrate surface；
S2, using magnetron sputtering apparatus, using ZnS targets and ZnO target as sputtering target material, the target stand of ZnS targets and ZnO target is and horizontal plane
In 45o angles, the extended line of ZnS targets and ZnO target is made to intersect at a point, substrate is placed in the crosspoint of ZnS targets and ZnO target；
S3, it is passed through argon working gas, makes ZnS target sputtering powers 45W, ZnO target sputtering power 150W first, carry out cosputtering
25min；Then ZnS targets sputtering power increases to 100W, ZnO target sputtering power is decreased to 80W and carries out cosputtering 3min；Finally close
Close ZnO target, ZnS target sputtering powers increase to 150W, sputter 2min, obtain ZnS clading ZnO nano nucleocapsid laminated films.
2. a kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film according to claim 1, feature
It is, the ZnS clading ZnO nano nucleocapsid laminated films that step S3 is obtained is placed in vacuum annealing furnace, at a temperature of 500 DEG C
Annealing 3 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810560530.XA CN108754442A (en) | 2018-06-04 | 2018-06-04 | A kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810560530.XA CN108754442A (en) | 2018-06-04 | 2018-06-04 | A kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108754442A true CN108754442A (en) | 2018-11-06 |
Family
ID=64002118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810560530.XA Withdrawn CN108754442A (en) | 2018-06-04 | 2018-06-04 | A kind of preparation method of ZnS clading ZnO nanos nucleocapsid laminated film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108754442A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102800747A (en) * | 2012-07-11 | 2012-11-28 | 上海大学 | Preparation method of ZnS-cladded ZnO nanoarray core-shell structure |
| CN104818463A (en) * | 2015-04-09 | 2015-08-05 | 河南科技大学 | Method for preparing nano platinum-coated gold particles film composite material |
| CN107316927A (en) * | 2017-08-17 | 2017-11-03 | 滨州学院 | A kind of core shell structure turns white optical device and preparation method thereof |
-
2018
- 2018-06-04 CN CN201810560530.XA patent/CN108754442A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102800747A (en) * | 2012-07-11 | 2012-11-28 | 上海大学 | Preparation method of ZnS-cladded ZnO nanoarray core-shell structure |
| CN104818463A (en) * | 2015-04-09 | 2015-08-05 | 河南科技大学 | Method for preparing nano platinum-coated gold particles film composite material |
| CN107316927A (en) * | 2017-08-17 | 2017-11-03 | 滨州学院 | A kind of core shell structure turns white optical device and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| ELENA ALEXANDRA SERBAN等: ""Structural and compositional evolutions of InxAl1−xN core–shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy"", 《NANOTECHNOLOGY》 * |
| MARIA BENELMEKKI等: ""A facile single-step synthesis of ternary multicore magneto-plasmonic nanoparticles"", 《NANOSCALE》 * |
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Application publication date: 20181106 |
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