CN108735881A - Light-emitting device and its manufacturing method - Google Patents
Light-emitting device and its manufacturing method Download PDFInfo
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- CN108735881A CN108735881A CN201710267124.XA CN201710267124A CN108735881A CN 108735881 A CN108735881 A CN 108735881A CN 201710267124 A CN201710267124 A CN 201710267124A CN 108735881 A CN108735881 A CN 108735881A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000004806 packaging method and process Methods 0.000 claims abstract description 80
- 229920003023 plastic Polymers 0.000 claims abstract description 79
- 239000004033 plastic Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 10
- 238000010146 3D printing Methods 0.000 claims description 8
- 238000004026 adhesive bonding Methods 0.000 claims description 6
- 238000001746 injection moulding Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000000748 compression moulding Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to light-emitting device, a kind of light-emitting device and its manufacturing method are disclosed.In the light-emitting device of the application, by lens of the packaging plastic surface setting with micro-structure, thus it is possible to vary the light of chip emission reaches the incidence angle of outgoing interface so that incidence angle is less than the critical angle for causing total reflection, to achieve the purpose that increase light emission rate.In addition, the refractive index of lens is equal to or more than the refractive index of packaging plastic, so that nearly all light into packaging plastic can pass through the interface of packaging plastic and lens and reach outgoing interface.
Description
Technical field
The present invention relates to light-emitting devices, more particularly to light-emitting device and its manufacturing method.
Background technology
In the light-emitting device that LED (Light Emitting Diode, light emitting diode) is constituted, the light extraction of chip is improved
Rate is always the target that those skilled in the art constantly pursue.
Invention content
The purpose of the present invention is to provide a kind of light-emitting device and its manufacturing method, the mesh for increasing light emission rate can be reached
's.
In order to solve the above technical problems, embodiments of the present invention disclose a kind of light-emitting device, light-emitting device includes core
Piece, substrate, packaging plastic and lens；
Chip is placed in the surface of substrate, and packaging plastic covers chip；
Lens are placed in packaging plastic surface and have micro-structure, and the radian of micro-structure makes light reach the incidence angle of outgoing interface
Less than the critical angle for causing total reflection.
Embodiments of the present invention also disclose a kind of manufacturing method of light-emitting device, and manufacturing method includes the following steps：
One substrate, and chip placement on the surface of the substrate are provided；
Packaging plastic is filled to cover chip；And
The lens with micro-structure are formed on packaging plastic surface, the radian of micro-structure makes light reach the incidence of outgoing interface
Angle is less than the critical angle for causing total reflection.
Compared with prior art, the main distinction and its effect are embodiment of the present invention：
In the light-emitting device of the application, by lens of the packaging plastic surface setting with micro-structure, thus it is possible to vary core
The light of piece transmitting reaches the incidence angle of outgoing interface so that incidence angle is less than the critical angle for causing total reflection, increases to reach
The purpose of light emission rate.
Further, the refractive index of lens is equal to or more than the refractive index of packaging plastic, can make nearly all into envelope
The interface of packaging plastic and lens can be passed through and reach outgoing interface by filling the light of glue.
Further, it is unified in packaging plastic surface and forms the lens with micro-structure, compare independent chip or independent SMD devices
Part adds the production technology of lens simpler, efficient.
Further, lens and packaging plastic are subjected to gapless gluing, to avoid secondary reflection.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of light-emitting device in first embodiment of the invention；
Fig. 2 a are light in interfacial refraction, the schematic diagram of reflection.
Fig. 2 b are light intensity schematic diagrames.
Fig. 2 c are a kind of schematic diagrames of light-emitting device light outgoing in first embodiment of the invention.
Fig. 3 is a kind of structural schematic diagram of light-emitting device in first embodiment of the invention.
Fig. 4 is a kind of structural schematic diagram of light-emitting device in first embodiment of the invention.
Fig. 5 a-5b show package level chip device.
Fig. 5 c are a kind of structural schematic diagrams of light-emitting device in first embodiment of the invention.
Fig. 6 is a kind of flow diagram of the manufacturing method of light-emitting device in second embodiment of the invention.
Specific implementation mode
In the following description, in order to make the reader understand this application better, many technical details are proposed.But this
The those of ordinary skill in field is appreciated that even if without these technical details and many variations based on the following respective embodiments
And modification, each claim of the application technical solution claimed can also be realized.
To make the object, technical solutions and advantages of the present invention clearer, the implementation below in conjunction with attached drawing to the present invention
Mode is described in further detail.
First embodiment of the invention is related to a kind of light-emitting device.Fig. 1 is the structural schematic diagram of the light-emitting device.Such as Fig. 1
Shown, which includes chip 1, substrate 2, packaging plastic 3 and lens 4.
Chip 1 is placed in the surface of substrate 2, and packaging plastic 3 covers chip 1.
Lens 4 are placed in 3 surface of packaging plastic and have micro-structure, and the radian of above-mentioned micro-structure makes light reach outgoing interface
Incidence angle is less than the critical angle for causing total reflection.
Optionally, above-mentioned micro-structure corresponds to the hemispherical dome structure of on one or more chips, is formed by multistage cambered surface
Number of other, non-spherical shapes or multiple edge body structure schematically illustrate the hemispherical dome structure corresponding to a chip in Fig. 1.In addition, can
To understand, other than above-mentioned several micro-structures, other kinds of micro-structure or micro-structure can also be used not to have to pair
It should can be arranged to the part corresponding to a chip on one or more chips, as long as chip emission can be changed
Light reaches the incidence angle of outgoing interface so that incidence angle is less than the critical angle for causing total reflection, to increase light emission rate.
In the light-emitting device of present embodiment, by lens of the packaging plastic surface setting with micro-structure, Ke Yigai
The light for becoming chip emission reaches the incidence angle of outgoing interface so that incidence angle is less than the critical angle for causing total reflection, to reach
Increase the purpose of light emission rate.
In a preference, the refractive index of lens 4 is equal to or more than the refractive index of packaging plastic 3.In optional embodiment
In, the refractive index of lens 4 can be 1.1-2.4.The refractive index of lens is equal to or more than the refractive index of packaging plastic, so as to
Enable nearly all light into packaging plastic to pass through the interface of packaging plastic and lens and reach outgoing interface, further increases
Light emission rate.However, it is to be appreciated that even if the refractive index of lens is slightly smaller than the refractive index of packaging plastic, it is still able to so that big
Part light passes through the interface of packaging plastic and lens from chip and reaches outgoing interface.
It is well known that when the total reflection phenomenon of light is the interface that light is emitted to optically thinner medium from optically denser medium, it is all anti-
The phenomenon that being emitted back towards optically denser medium.As shown in Figure 2 a, packaging plastic is optically denser medium relative to air, is obtained according to the refractive index law of light
Know that Sin θ 1/Sin θ 2=n2/n1 (1), wherein θ 1 are incidence angles, θ 2 is refraction angle, and θ 3 is angle of reflection, n1、n2It is packaging plastic respectively
With the refractive index of air.When light injects optically thinner medium by optically denser medium and refraction angle θ 2 is equal to 90 degree, formula (1) is：
Sinθ1=n2/n1, θ at this time1Referred to as critical angle.When incidence angle >=critical angle, incident ray is all reflected
It returns in former medium, total reflection phenomenon generates.
Assuming that the refractive index of packaging plastic is 1.414, the refractive index of air is 1, when packaging plastic and Air Interface are plane,
It then generates critical angle when total reflection and is equal to 45 degree.The spatial distribution of the distribution shape of LED chip emergent light, i.e. chip light intensity can
Approximation sees cosine shape, as shown in Figure 2 b, I asθThe light intensity for being θ for exit facet angle, wherein Io are perpendicular to exit facet
Light intensity and exit facet angle, θ are zero degree, for perpendicular to the largest light intensity of exit facet.When packaging plastic and Air Interface are plane,
Critical angle is 45 degree, it is meant that the light intensity that 45 degree of incidence angle > will all be returned in packaging plastic and can not be emitted in air, that is,
Say that the light of this part is all wasted.And this part light occupies prodigious ratio, theoretically calculates, more than the light within 45 degree
It is more.
If being subject to Lenticular lens on chip, as shown in Figure 2 c, by taking hemispherical micro-structure as an example, and lens are assumed
Refractive index >=packaging plastic refractive index, and to carry out gapless viscous for the glued glue that refractive index identical as packaging plastic is preferably used
It closes, then will not be totally reflected.This is because when the refractive index of refractive index >=packaging plastic of lens in packaging plastic lens interface
The incident light in direction changes the direction of the launch, and when reaching outgoing interface (i.e. lens air interface) because having certain radian
Micro-structure and further changed incidence angle, to make it be significantly smaller than critical angle, avoid the generation of total reflection phenomenon, carry
The high luminous flux of outgoing.Other kinds of micro-structure, such as aspherical, multiple edge body micro-structure can equally reach identical effect
Fruit.
It is unified in packaging plastic surface and forms the lens with micro-structure, add compared to independent chip or individual SMD light sources
The production technology of mirror is simpler, efficient.Specifically：
Lens 4 can photoetching be made or lens 4 may be used similar to packaging plastic 3 by being carried out to packaging plastic surface
Material is made by 3D printing or by dispensing on 3 surface of packaging plastic, realizes gapless bonding with packaging plastic 3, wherein 3D is beaten
Print or the refractive index of point glue material are equal to or more than the refractive index of packaging plastic 3 to avoid secondary reflection.
The material of lens 4 can also be in advance made up of 3D printing, injection molding, compression moulding or sinter molding after again with
Packaging plastic 3 carries out gapless gluing, wherein the refractive index for carrying out glued glued glue is equal to the refractive index of lens 4, to avoid two
Secondary reflection.
In each embodiment of the application, lens 4 can be organic material or inorganic material, such as silica gel, PC (poly- carbon
Acid esters), PMMA (polymethyl methacrylate), glass, crystal, ceramics etc..
Above-mentioned light-emitting device can be chip on board (COB, Chip On Board) device, surface mount (SMD,
Surface Mount Device) composition device or wafer-level package (CSP, Chip Scale Package) device.SMD
The device of composition can be by the SMD devices of device, single SMD or other forms that SMD arrays are formed.
When above-mentioned light-emitting device is chip on board device, as shown in figure 3, substrate 2 is light source substrate, in 1 surrounding of chip
Equipped with box dam 5, packaging plastic 3 is filled in box dam 5 and covers chip 1, and being unified in 3 surface of packaging plastic and being formed has the saturating of micro-structure
Mirror 4, each micro-structure correspond on one or more chips 1；
When above-mentioned light-emitting device is surface mount device, as shown in figure 4, substrate 2 is thermal conductivity printed wiring board, often
A surface mount device includes chip 1, after each surface mount device (SMD) is covered by packaging plastic 3, is unified in 3 surface of packaging plastic
The lens 4 with micro-structure are formed, each micro-structure corresponds to one or more surface mount devices；
Above-mentioned light-emitting device can also be wafer-level package device, chip electrode be directly welded in PCB (Printed,
Circuit Board, printed circuit board) it (as shown in Figure 5 a) or is directly welded on the electrode of surface mount device (such as on circuit
Shown in Fig. 5 b), the structure of light-emitting device at this time is similar with Fig. 3, COB light-emitting devices shown in Fig. 4 and SMD light-emitting devices.
It is appreciated that the chip of wafer-level package is typically flip chip structure (Flip Chip).When above-mentioned light-emitting device
When being wafer-level package device, the structure of above-mentioned light-emitting device can also be as shown in Figure 5 c, wherein substrate 2 is light source substrate, core
Piece 1 is CSP flip-chips, and packaging plastic 3 covers each chip 1, is unified in 3 surface of each packaging plastic and forms the lens with micro-structure
4, each micro-structure corresponds on one or more chips grade packaging.
Furthermore, it is to be understood that in each embodiment of the application, it can also be in other kinds of light-emitting device
Lens of the setting with micro-structure, are not limited to above-mentioned three kinds of light-emitting devices on chip.
Second embodiment of the invention is related to a kind of manufacturing method of light-emitting device.Fig. 6 is the manufacturer of the light-emitting device
The flow diagram of method.As shown in fig. 6, the manufacturing method of the light-emitting device includes the following steps：
In step 601, a substrate, and chip placement on the surface of the substrate are provided.
Then into step 602, filling packaging plastic is to cover chip.
Then into step 603, the lens with micro-structure are formed on packaging plastic surface, wherein the radian of above-mentioned micro-structure
So that the incidence angle that light reaches outgoing interface (i.e. lens air interface) is less than the critical angle for causing total reflection.Optionally, above-mentioned
Micro-structure corresponds to the hemispherical dome structure of on one or more chips, the number of other, non-spherical shapes formed by multistage cambered surface or multiple edge body
Structure.Furthermore, it is to be understood that other than above-mentioned several micro-structures, it can also be micro- using other kinds of micro-structure or one
Structure does not have to that the part corresponding to a chip can be arranged to corresponding on one or more chips, as long as can change
The light of chip emission reaches the incidence angle of outgoing interface so that incidence angle is less than the critical angle for causing total reflection, to increase
Light rate.
It is saturating with micro-structure by being formed on packaging plastic surface in the manufacturing method of present embodiment light-emitting device
Mirror, thus it is possible to vary the light of chip emission reaches the incidence angle of outgoing interface so that incidence angle is less than the critical angle of reference total reflection,
To achieve the purpose that increase light emission rate.
In a preference, in step 603, the refractive index of lens is equal to or more than the refractive index of packaging plastic.Can
In the embodiment of choosing, the refractive index of lens can be 1.1-2.4.The refractive index of lens is equal to or more than the refractive index of packaging plastic,
So that nearly all light into packaging plastic can pass through the interface of packaging plastic and lens and reach outgoing interface, into
One step improves light emission rate.However, it is to be appreciated that even if the refractive index of lens is slightly smaller than the refractive index or energy of packaging plastic
It is enough that most of light is made to pass through the interface of packaging plastic and lens from chip and reach outgoing interface.
It is unified in packaging plastic surface and forms the lens with micro-structure, add the production technology of lens simpler compared to independent chip
It is single, efficient.Specifically：
In step 603, lens are formed by carrying out photoetching to packaging plastic surface, or by 3D printing or passed through a little
Lens are made on packaging plastic surface in glue, or will be ready-made by 3D printing, injection molding, compression moulding or sinter molding
Mirror carries out gapless gluing with packaging plastic.
Lens and packaging plastic are carried out gapless gluing by glued glue, wherein the refractive index of glued glue is equal to the refraction of lens
Rate.Lens and packaging plastic are subjected to gapless gluing, to avoid secondary reflection.
Above-mentioned light-emitting device can be chip on board device, surface mount device or wafer-level package device.In addition, can
To understand, in each embodiment of the application, can also be arranged on the chip in other kinds of light-emitting device has
The lens of micro-structure are not limited to above-mentioned three kinds of light-emitting devices.
Present embodiment is method embodiment corresponding with first embodiment, and present embodiment can be implemented with first
Mode is worked in coordination implementation.The relevant technical details mentioned in first embodiment are still effective in the present embodiment, in order to
It reduces and repeats, which is not described herein again.Correspondingly, the relevant technical details mentioned in present embodiment are also applicable in the first implementation
In mode.
It should be noted that in the claim and specification of this patent, such as first and second or the like relationship
Term is only used to distinguish one entity or operation from another entity or operation, without necessarily requiring or implying
There are any actual relationship or orders between these entities or operation.Moreover, the terms "include", "comprise" or its
Any other variant is intended to non-exclusive inclusion so that including the processes of a series of elements, method, article or
Equipment includes not only those elements, but also includes other elements that are not explicitly listed, or further include for this process,
Method, article or the intrinsic element of equipment.In the absence of more restrictions, being wanted by what sentence " including one " limited
Element, it is not excluded that there is also other identical elements in the process, method, article or apparatus that includes the element.
Although by referring to some of the preferred embodiment of the invention, the present invention is shown and described,
It will be understood by those skilled in the art that can to it, various changes can be made in the form and details, without departing from this hair
Bright spirit and scope.
Claims (10)
1. a kind of light-emitting device, which is characterized in that the light-emitting device includes chip, substrate, packaging plastic and lens；
The chip is placed in the surface of the substrate, and the packaging plastic covers the chip；
The lens are placed in the packaging plastic surface and have micro-structure, and the radian of the micro-structure makes light reach outgoing interface
Incidence angle be less than cause total reflection critical angle.
2. light-emitting device according to claim 1, which is characterized in that the micro-structure corresponds on one or more chips
Hemispherical dome structure, the number of other, non-spherical shapes that is formed by multistage cambered surface or multiple edge body structure.
3. light-emitting device according to claim 1, which is characterized in that the refractive index of the lens is equal to or more than the envelope
Fill the refractive index of glue.
4. light-emitting device according to claim 1, which is characterized in that the lens are by carrying out the packaging plastic surface
Photoetching is made,
Or the lens are made by 3D printing or by dispensing on the packaging plastic surface,
Or the lens be made up in advance of 3D printing, injection molding, compression moulding or sinter molding and with the packaging plastic
It is glued to carry out gapless, wherein the refractive index for carrying out glued glued glue is equal to the refractive index of the lens.
5. light-emitting device according to any one of claim 1 to 4, which is characterized in that the light-emitting device is core on plate
The device or wafer-level package CSP devices of piece COB devices, surface mount SMD compositions.
6. a kind of manufacturing method of light-emitting device, which is characterized in that the manufacturing method includes the following steps：
A substrate is provided, and in the surface chip placement of the substrate；
Packaging plastic is filled to cover the chip；And
The lens with micro-structure are formed on the packaging plastic surface, the radian of the micro-structure makes light reach outgoing interface
Incidence angle is less than the critical angle for causing total reflection.
7. the manufacturing method of light-emitting device according to claim 6, which is characterized in that formed and had on the packaging plastic surface
Have in the step of lens of micro-structure, the micro-structure corresponds to the hemispherical dome structure of on one or more chips, by multistage arc
The number of other, non-spherical shapes or multiple edge body structure that face is formed.
8. the manufacturing method of light-emitting device according to claim 6, which is characterized in that formed and had on the packaging plastic surface
Have in the step of lens of micro-structure, the index of refraction of the lens is equal to or more than the refractive index of the packaging plastic.
9. the manufacturing method of light-emitting device according to claim 6, which is characterized in that formed and had on the packaging plastic surface
Have in the step of lens of micro-structure, be made by carrying out photoetching to the packaging plastic surface,
Or in the step of packaging plastic surface forms the lens with micro-structure, by 3D printing or by dispensing in institute
It states packaging plastic surface and the lens is made,
Or in the step of packaging plastic surface forms the lens with micro-structure, 3D printing, injection molding, pressure will be passed through
Type or the ready-made lens of sinter molding are made and carry out gapless gluing with the packaging plastic, wherein carrying out glued glued glue
Refractive index be equal to the lens refractive index.
10. the manufacturing method of the light-emitting device according to any one of claim 6 to 9, which is characterized in that the luminous dress
Set be chip on board device, surface mount composition device or wafer-level package device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710267124.XA CN108735881A (en) | 2017-04-21 | 2017-04-21 | Light-emitting device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710267124.XA CN108735881A (en) | 2017-04-21 | 2017-04-21 | Light-emitting device and its manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| CN108735881A true CN108735881A (en) | 2018-11-02 |
Family
ID=63933606
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710267124.XA Pending CN108735881A (en) | 2017-04-21 | 2017-04-21 | Light-emitting device and its manufacturing method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364613A (en) * | 2019-06-06 | 2019-10-22 | 佛山市中昊光电科技有限公司 | A kind of COB light source and its manufacturing method |
| CN111403579A (en) * | 2020-02-29 | 2020-07-10 | 华中科技大学 | High-power white light L ED with array lens light-emitting surface and preparation method thereof |
| CN114464604A (en) * | 2021-07-16 | 2022-05-10 | 荣耀终端有限公司 | Backlight module, display device, electronic equipment and packaging method of backlight module |
| CN114578615A (en) * | 2022-02-18 | 2022-06-03 | 惠州视维新技术有限公司 | Backlight module and display device |
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|---|---|---|---|---|
| CN102244155A (en) * | 2011-06-08 | 2011-11-16 | 徐晓峰 | Method for integrally packaging LED (light-emitting diode) light source curved surface |
| CN103137829A (en) * | 2011-12-02 | 2013-06-05 | 日立空调·家用电器株式会社 | Lighting device |
| CN206921858U (en) * | 2017-04-21 | 2018-01-23 | 上海威廉照明电气有限公司 | Light-emitting device |
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2017
- 2017-04-21 CN CN201710267124.XA patent/CN108735881A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244155A (en) * | 2011-06-08 | 2011-11-16 | 徐晓峰 | Method for integrally packaging LED (light-emitting diode) light source curved surface |
| CN103137829A (en) * | 2011-12-02 | 2013-06-05 | 日立空调·家用电器株式会社 | Lighting device |
| CN206921858U (en) * | 2017-04-21 | 2018-01-23 | 上海威廉照明电气有限公司 | Light-emitting device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364613A (en) * | 2019-06-06 | 2019-10-22 | 佛山市中昊光电科技有限公司 | A kind of COB light source and its manufacturing method |
| CN111403579A (en) * | 2020-02-29 | 2020-07-10 | 华中科技大学 | High-power white light L ED with array lens light-emitting surface and preparation method thereof |
| CN114464604A (en) * | 2021-07-16 | 2022-05-10 | 荣耀终端有限公司 | Backlight module, display device, electronic equipment and packaging method of backlight module |
| CN114578615A (en) * | 2022-02-18 | 2022-06-03 | 惠州视维新技术有限公司 | Backlight module and display device |
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