CN108735832A - A kind of lateral isolation grid-type photoconductivity switching and preparation method thereof - Google Patents
A kind of lateral isolation grid-type photoconductivity switching and preparation method thereof Download PDFInfo
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1133—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device
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Abstract
The invention discloses a kind of lateral isolation grid-type photoconductivity switchings, including semi-insulating substrate, being made successively on the lower surface of semi-insulating substrate has heavy n-type doped region II and anode, being made in the top of the semi-insulating substrate has electricity triggering region, the top in electricity triggering region, which makes, insulating layer, the both ends of insulating layer make respectively cathode, the upper-end contact of cathode and electricity triggering region, being made at the upper surface center of insulating layer has grid, and total reflection mirror is equipped in the offside of the laser incidence side in laser triggering region.The invention also discloses the production methods of above-mentioned photoconductivity switching.Photoconductivity switching provided by the invention can improve current leakage, and improve the efficiency of light energy utilization.
Description
Technical field
The invention belongs to technical field of semiconductors, are related to a kind of lateral isolation grid-type photoconductivity switching, the invention further relates to
The production method of above-mentioned photoconductivity switching.
Background technology
Photoconductivity switching (photoconductive semiconductor switch, PCSS) is intrinsic or semi-insulating
The product that (semi-insulated, SI) crystalline material and ultrafast pulse power laser are combined, in ultra-wideband pulse power skill
Have broad application prospects in the various fields such as art field and ultrafast electronics.The natural turn-off time of photoconductivity switching mainly by
Carrier lifetime determines, therefore the photoelectricity that only the direct band-gap semicondictors material such as GaAs (GaAs), gallium nitride (GaN) makes
Leading switch just has ultrafast turn-off capacity.It is compared from energy gap, electronics maximum drift speed, thermal conductivity etc., the third generation
Semi-conducting material GaN is more suitable for than second generation semi-conducting material GaAs towards high pressure Gao Zhongying high-power applications.At present by crystal
Growth technique is limited, and the GaN crystal that unintentional doped growing obtains is N-shaped, therefore self-supporting semi-insulating GaN wafer is all base
In hydrogen phase epitaxy method (hydride vapor phase epitaxy, the HVPE) growth that iron (Fe) adulterates, referred to as GaN:
Fe.It is compensated in crystal growth after inevitable impurity and defect donor level by being introduced into the iron deep acceptor of high concentration,
GaN:The conduction type of Fe is extremely weak N-shaped, and body resistivity can reach 109Ω cm magnitudes.In addition, intrinsic GaN can only
It is triggered by expensive ultraviolet laser, and GaN:The conventional 532nm lasers that Fe can be less than GaN energy gaps by photon energy touch
Hair (is known as extrinsic light triggering), therefore 532nm lasers GaN:Fe photoconduction power switch receives highest attention.
The GaN made based on traditional vertical structure:Fe photoconductivity switchings (see J.H.Leach, R.Metzger,
" the High voltage bulk that E.A.Preble and K.R.EvansProc. is delivered in SPIE OPTO meetings in 2013
Light shown in GaN-based photoconductive switches for pulsed power applications " papers
Conductance switch device architecture), dark-state DC break down voltage ability is far smaller than the theory corresponding to the intrinsic energy gap 3.4eV of GaN
Value 3MV/cm.This is because conventional photoconductive switch is substantially exactly a photo resistance, dark-state leakage current can be with outer biasing
It sets voltage and follows Ohm's law linear increase.
Invention content
The object of the present invention is to provide a kind of lateral isolation grid-type photoconductivity switchings, can improve current leakage, and carry
The efficiency of light energy utilization of height triggering laser.
It is a further object to provide a kind of production methods of lateral isolation grid-type photoconductivity switching.
The technical solution adopted in the present invention is a kind of lateral isolation grid-type photoconductivity switching, including semi-insulating substrate,
Being made successively on the lower surface of semi-insulating substrate has heavy n-type doped region II and anode, and being made in the top of the semi-insulating substrate has
Electricity triggering region, the top in electricity triggering region, which makes, insulating layer, and the both ends of insulating layer make respectively cathode, and cathode is touched with electricity
The upper-end contact for sending out region, making at the upper surface center of insulating layer has grid, the laser incidence side in laser triggering region
Offside is equipped with total reflection mirror.
The characteristics of the first technical solution of the invention, also resides in,
Electricity triggering region includes the lightly n-type doped region for being produced on semi-insulating substrate upper surface, the upper surface of lightly n-type doped region
Both ends make successively respectively heavily p-type doped region and lightly p-type doped region, the intersectional region of heavily p-type doped region and lightly p-type doped region
Top, which makes, heavy n-type doped region I.
Using electric isolution between grid and cathode.
Heavily p-type doped region, lightly p-type doped region, the concentration of lightly n-type doped region and thickness parameter will ensure lightly n-type doped region
The space-charge region of the reverse p-n junctions formed between heavily p-type doped region, lightly p-type doped region is first expanded with the increase of bias voltage
The semi-insulating substrate side opened up, rather than first expand to heavy n-type doped region I.
It wears the space-charge region of the reverse p-n junctions formed between lightly n-type doped region and heavily p-type doped region, lightly p-type doped region
Logical voltage threshold is 0.01-0.5 times of the nominal DC bias voltage of photoconductivity switching.
Another technical solution of the present invention is a kind of production method of lateral isolation grid-type photoconductivity switching,
Specifically comprise the following steps：
Step 1, the epitaxial growth lightly n-type doped region in semi-insulating substrate；
Step 2, it in the upper surface of extension lightly n-type doped region, opens a window to form heavily p-type doped region 6 by photoetching；
Step 3, it in the upper surface of extension lightly n-type doped region, opens a window to form lightly p-type doped region 5 by photoetching；
Step 4, it in the upper surface of lightly p-type doped region and heavily p-type doped region, is adulterated by photoetching windowing with heavy n-type is formed
Area I；
Step 5, it in the upper surface of lightly n-type doped region, lightly p-type doped region and heavy n-type doped region I, is opened a window and is made by photoetching
Make insulating layer, makes grid on the insulating layer；
Step 6, cathode 1 is made in heavily p-type doped region and the upper surfaces heavy n-type doped region I；
Step 7, heavy n-type doped region II is made in the lower surface of semi-insulating substrate 8, is made below heavy n-type doped region II
Anode.
Beneficial effects of the present invention are that photoconduction conductance switch provided by the invention improves the photoconduction of traditional longitudinal type
The big problem of switch DC dark-state leakage current, therefore its DC break down voltage higher.The present invention photoconductivity switching laser triggering it
It is preceding to give the voltage transfer that the region of electricity triggering originally is shared to laser triggering region, the i.e. wink in laser triggering region by grid voltage control
State bias voltage improves, therefore compared with traditional longitudinal type photoconductivity switching that same substrate makes, the arteries and veins of output light electric current
Rush peak value higher.In addition, in order to solve the problems, such as that the extrinsic absorption coefficient of light is small and laser is caused not to be completely absorbed, this hair
A total reflective mirror is arranged in the offside of laser incidence side in bright photoconductivity switching, and the light energy reflected not being completely absorbed is returned laser
It triggers in region.
Description of the drawings
Fig. 1 is pulse power laser from a kind of side of the semi-insulating substrate of lateral isolation grid-type photoconductivity switching of the present invention
Incident schematic diagram；
Fig. 2 is a kind of structural schematic diagram of lateral isolation grid-type photoconductivity switching of the present invention；
Fig. 3 is a kind of device inside equivalent circuit diagram of lateral isolation grid-type photoconductivity switching of the present invention；
Fig. 4 is that a kind of embodiment of the device of lateral isolation grid-type photoconductivity switching of the present invention is electric under three kinds of bias conditions
Trigger the static partial pressure relationship figure in region and laser triggering region；
Fig. 5 is that a kind of embodiment of the device of lateral isolation grid-type photoconductivity switching of the present invention is switched with conventional photoconductive
Drain current versus figure；
Fig. 6 is that a kind of embodiment of the device of lateral isolation grid-type photoconductivity switching of the present invention is switched with conventional photoconductive
Photoelectric current peak value of pulse comparison diagram.
In figure, 1. cathodes, 2. grids, 3. insulating layers, 4. heavy n-type doped region I, 5. lightly p-type doped regions, the doping of 6. heavily p-types
Area, 7. lightly n-type doped regions, 8. semi-insulating substrate, 9. heavy n-type doped region II, 10. anodes, 11. electricity triggering regions, 12. laser,
13. total reflective mirror.
Specific implementation mode
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
A kind of lateral isolation grid-type photoconductivity switching of the present invention, as shown in Figure 1, 2, including (the semi-insulating lining of semi-insulating substrate 8
Bottom 8 is as laser triggering region), being made successively on the lower surface of semi-insulating substrate 8 has heavy n-type doped region II9 and anode 10,
Being made in the top of the semi-insulating substrate 8 has electricity triggering region 11, and the top in electricity triggering region, which makes, insulating layer 3, insulating layer 3
Both ends make have cathode 1 respectively, the upper-end contact of cathode 1 and electricity triggering region 11 makes at the upper surface center of insulating layer 3
There is grid 2, total reflection mirror 13 is installed in the offside of 12 light incident side of laser in laser triggering region.
Electricity triggering region 11 includes being produced on the lightly n-type doped region 7 of semi-insulating substrate upper surface, lightly n-type doped region 7 it is upper
Surface both ends make successively respectively a heavily p-type doped region 6 and lightly p-type doped region 5, heavily p-type doped region 6 and lightly p-type doped region 5
Being made above intersectional region has heavy n-type doped region I4, two pieces of heavy n-type doped region I4, two pieces of heavily p-type doped regions, 6, two pieces of lightly p-type
Doped region 5 and one piece of lightly n-type doped region 7 form metal insulatioin semiconductor field effect transistor
(metal-insulation-semiconductor field effect transistor, MISFET) unit knot
Structure.
Using electric isolution between grid 2 and cathode 1.
Heavily p-type doped region 6, lightly p-type doped region 5, the concentration of lightly n-type doped region 7 and thickness parameter will ensure that lightly n-type is adulterated
The space-charge region of the reverse p-n junctions formed between area 7 and heavily p-type doped region 6, lightly p-type doped region 5 with bias voltage increase
And 8 side of semi-insulating substrate first expanded to, rather than first expand to heavy n-type doped region I4.
The space-charge region of the reverse p-n junctions formed between lightly n-type doped region 7 and heavily p-type doped region 6, lightly p-type doped region 5
Punch through voltage threshold value is 0.01-0.5 times of the nominal DC bias voltage of photoconductivity switching.
After grid 2 adds the transoid voltage threshold that positive pressure is more than lightly p-type doped region 5, lightly p-type doped region can form n at 5 top
Type electron channel makes the surface above raceway groove be made to very smooth so that raceway groove based on well known semiconductor surface polishing technology
The carrier at place has good mobility, improves the working frequency of device.
The present invention also provides a kind of production methods of lateral isolation grid-type photoconductivity switching, specifically comprise the following steps：
Step 1, the epitaxial growth lightly n-type doped region 7 in semi-insulating substrate 8；
Step 2, it in the upper surface of extension lightly n-type doped region 7, (is noted using well known diffusion or ion by photoetching windowing
Enter technique) form heavily p-type doped region 6；
Step 3, it in the upper surface of extension lightly n-type doped region 7, (is noted using well known diffusion or ion by photoetching windowing
Enter technique) form lightly p-type doped region 5；
Step 4, in the upper surface of lightly p-type doped region 5 and heavily p-type doped region 6, well known expansion (is used by photoetching windowing
Scattered or ion implantation technology) form heavy n-type doped region I4；
Step 5, it in 6 upper surface of lightly n-type doped region 7, lightly p-type doped region 5 and heavy n-type doped region, (is adopted by photoetching windowing
With well known oxidation growth, magnetron sputtering or chemical vapor deposition method) insulating layer 3 is made, on the insulating layer 3 (well known to use
The metal electrodes such as magnetron sputtering method, vapour deposition method manufacture craft) grid 2 is made, well known metal material, example may be used in grid 2
Aluminium (Al), nickel (Ni), golden (Au), copper (Cu) can such as be used；
Step 6, in heavily p-type doped region 6 and the upper surfaces heavy n-type doped region I4 (with well known magnetron sputtering method, vapour deposition method etc.
Metal electrode manufacture craft) cathode 1 is made, cathode 1 may be used well known metal material, titanium (Ti), aluminium can be used for example
(Al), nickel (Ni), golden (Au), copper (Cu) etc.；
Step 7, heavy n-type is made (with techniques such as well known diffusion or ion implantings) in the lower surface of semi-insulating substrate 8 to mix
Miscellaneous area II9 makes below heavy n-type doped region II9 (of the metal electrodes such as well known magnetron sputtering method, vapour deposition method manufacture craft)
Well known metal material may be used in anode 10, anode 10, can be used for example titanium (Ti), aluminium (Al), nickel (Ni), golden (Au),
Copper (Cu) etc..
8 thickness of semi-insulating substrate (D) zone of reasonableness is 300-8000 μm.In general, laser is from the side of semi-insulating substrate 8
Incidence, as shown in Figure 1, photo-generate electron-hole pair can be generated in semi-insulating substrate 8, therefore semi-insulating substrate 8 also may be used herein
With referred to as laser triggering region.Because at work, 2 voltage of grid of implementation can trigger heavy n-type doped region I4, lightly p-type doping
Area 5, the electronics of heavily p-type doped region 6 and lightly n-type doped region 7 or hole activity, so heavy n-type doped region I4, lightly p-type doped region
5, heavily p-type doped region 6 and lightly n-type doped region 7 also merge herein is known as (grid) electricity triggering region 11.
External equivalent-circuit model is as shown in Figure 3：
(1) heavy n-type doped region I4, lightly p-type doped region 5, heavily p-type doped region 6 and lightly n-type doped region 7 form N-shaped conduction ditch
The MISFET structures in road.As shown in figure 3, the reverse p-n junctions are externally equivalent to a n-MISFET ideal element.
(2) in practice, by rationally designing each doped region, (heavy n-type doped region I4, lightly p-type doped region 5, heavily p-type are adulterated
Area 6 and lightly n-type doped region 7) concentration and the parameters such as thickness, to ensure to be formed between heavily p-type doped region 6 and lightly n-type doped region 7
The space-charge regions of reverse p-n junctions semi-insulating substrate (laser triggering region) 8 one is first expanded to the increase of bias voltage
Side, rather than first expand to heavy n-type doped region I4.As shown in figure 3, the space-charge region effect of the reverse p-n junctions is externally equivalent to
One backward diode ideal element.Start from scratch and increase applying bias voltage, when the border extended of space-charge region arrives
When the upper surface of semi-insulating substrate 8, the applying bias voltage value defined at this time is punch through voltage Vth。
(3) laser triggering region (semi-insulating substrate 8, the areas SI) as shown in Figure 3 be externally equivalent to one it is pressure-sensitive and photosensitive
Resistance ideal element R.(it is applied with applying bias voltage U when present invention switch is statics, and grid voltage trigger signal and laser
Trigger signal does not reach before device), one of situation is：As applying bias voltage UsLess than or equal to VthWhen, then semi-insulating lining
The partial pressure at bottom 8 is zero, and resistance R is a constant, is mainly determined by substrate material resistivity, but because without dividing on substrate
Pressure, so leakage current is zero at this time；Situation second is that：As applying bias voltage UsMore than VthWhen, then the partial pressure of semi-insulating substrate 8
For Us-Vth.Since substrate conduction type is extremely weak N-shaped, so UsSlightly larger than VthIt may make the whole in semi-insulating substrate 8
Cation exhausts to which space-charge region is broadened to heavy n-type doped region II9, and ends in heavy n-type doped region II9, due at this time
Entire semi-insulating substrate layer 8 all becomes space-charge region, so leakage current is the reversed drain saturation current in space-charge region at this time, far
Switching the leakage current based on Ohm's law much smaller than conventional photoconductive, (be equal to bias voltage divided by Traditional photovoltaic stream switch half is exhausted
Edge resistance substrate).In conclusion as long as breakdown potential has not yet been reached in the bias voltage of lateral isolation grid-type photoconductivity switching of the present invention
Pressure, then the leakage current of lateral isolation grid-type photoconductivity switching of the present invention is much smaller than conventional photoconductive switch.
A kind of trigger process of lateral isolation grid-type photoconductivity switching of the present invention includes the following steps：
1) 2 one electric pulses of grid are given, the conducting channel of 2 lower section of grid is made to be kept within nanosecond or magnitude of subnanosecond time
Open-minded, the electronics of heavy n-type doped region I 4 can flow to lightly n-type doped region 7 by conducting channel, i.e., electricity triggering region 11 is opened
Logical, the voltage originally born on electricity triggering region 11 is transferred to semi-insulating substrate 8, makes semi-insulating substrate 8 when raceway groove is opened
It is interior to bear whole applying bias voltages；
2) it uses the pulse laser 12 of nanosecond or picosecond pulsewidth to irradiate semi-insulating substrate 8 and generates photo-generate electron-hole pair, electricity
Son-hole is moved to anode and cathode direction, semi-insulating substrate 8 is opened respectively to being detached under electric field action.So far photoelectricity
It leads switching device to be opened, external output light current impulse.
3) stop pulse laser 12, photo-generated carrier in semi-insulating substrate 8 can because be absorbed by the electrode with it is compound due to disappear,
To which substrate restores high-impedance state, then stops grid forward voltage (grid voltage is made to be less than or equal to zero), conducting channel is made to turn off, until
This photoconductivity switching device of the present invention is turned off.
A kind of signal sequence of lateral isolation grid-type photoconductivity switching of the present invention, it is desirable that ensure that conducting channel opens morning at moment
In or be equal to 12 start time of laser pulse, and conducting channel close moment be later than or be equal to 12 finish time of laser pulse.
The present invention is further described below by specific example.
Grown with HVPE methods, dark electric resistance rate is 1 × 109The semi-insulating Free-standing GaN of Ω cm:Fe wafers are as lining
Bottom makes structure of the invention, and every design parameter is as shown in table 1.
The design parameter value of 1 embodiment of table
Static partial pressure properties as shown in figure 4, when external bias be less than or equal to threshold voltage vt h=2.2kV when, it is external partially
Pressure is all undertaken by electricity triggering region；When applying bias voltage is more than threshold voltage, it is more than the part voltage of threshold voltage
It is undertaken by laser triggering region.
Q-switch YAG laser is as triggering light source, laser pulse width 1ns, wavelength 532nm.Laser irradiation
The mode of photoconductivity switching is as shown in Figure 1.The total reflective mirror of one piece of 532nm wavelength is placed in photoconductivity switching Right vertical so that
The laser appeared from semi-insulating substrate 8 can be reflected back toward in semi-insulating substrate 8, to improve light absorption utilization rate.GaN:Fe pairs
The absorption coefficient of light of 532nm is about α=1.7cm-1It is not installed entirely if substrate width (W) is the photoconductivity switching of the present invention of 1cm
Anti- mirror 13, it will there is 18% laser energy to be appeared from side, calculation basis sees below formula：
In order to contrast beneficial effects of the present invention, with same semi-insulating GaN:One traditional longitudinal direction of Fe wafer manufacturings
Type photoconductivity switching has semi-insulating substrate 8, heavy n-type doped region II9 and the anode 10 being identical with the embodiment of the present invention, in addition
There is one layer of heavy n-type doped region I4 (thickness and concentration are as heavy n-type doped region II9) in the top of semi-insulating substrate 8, at this
There is one layer of metal as cathode 1 on a heavy n-type doped region I4 (parameter of cathode 1 is as 10 metal layer of anode).This is passed
System longitudinal type photoconductivity switching and the novel photoelectric of the present invention lead the VA characteristic curve of switch as shown in figure 5, can obviously see
Go out, the ratio between the leakage current of the more high photoconductivity switching then of the present invention of bias relative to traditional longitudinal type photoconductivity switching is smaller.
When the applying bias voltage for applying 10kV to PCSS of the present invention, the partial pressure in electricity triggering region is about 2.2kV when static,
Therefore the bias field intensity of semi-insulating substrate 8 about (10kV-2.2kV)/950 μm=82.1kV/cm.It is opened to conventional photoconductive
Closing application applying bias voltage 7.8kV, (bias field intensity is 7.8kV/950 μm=82.1kV/cm, with the semi-insulating lining of the present invention
Static electric field intensity on bottom 8 is the same).Before applying electric pulse to grid voltage, the leakage current density of PCSS of the present invention is 1.7 ×
10-9A/ μm, and the leakage current density of conventional photoconductive switch is 4.2 × 10-6A/ μm, is higher than 3 quantity of PCSS of the present invention
Grade illustrates that the present invention can effectively inhibit the generation of leakage current.Then, it is to the PCSS grids 2 of the present invention application rise time
10ns, plateau time 6ns, the electric signal that plateau amplitude is 10V and fall time is 10ns, after electric signal starts
The 3ns moment, (partial pressure in the region 11 of electricity triggering at this time was transferred to laser triggering region, i.e. laser triggering region electric field substantially
It is increased to 10kV/950 μm=105.3kV/cm), irradiate semi-insulating substrate 8 with Gauss laser pulse.Because with traditional PCSS phases
Than, bias field is higher residing for the photo-generated carrier of PCSS of the present invention, therefore the peak density 6.58 of photoelectric current as shown in Figure 6 ×
10-5A/ μm is higher than 5.45 × 10-5A/ μm of tradition PCSS peak values, is higher by 20.73%, illustrates PCSS of the present invention to a certain extent
Improve photoelectric conversion efficiency.
Claims (6)
1. a kind of lateral isolation grid-type photoconductivity switching, it is characterised in that：Including semi-insulating substrate (8), in semi-insulating substrate (8)
Lower surface on successively make have heavy n-type doped region II (9) and anode (10), the semi-insulating substrate (8) top making have
Electricity triggering region (11), the top in electricity triggering region, which makes, insulating layer (3), and the both ends of insulating layer (3) make respectively cathode
(1), cathode (1) triggers the upper-end contact of region (11) with electricity, and being made at the upper surface center of insulating layer (3) has grid (2),
The offside of laser (12) light incident side of semi-insulating substrate (8) is equipped with total reflection mirror (13).
2. a kind of lateral isolation grid-type photoconductivity switching according to claim 1, it is characterised in that：Electricity triggering region
(11) include the lightly n-type doped region (7) for being produced on semi-insulating substrate (8) upper surface, the upper surface both ends of lightly n-type doped region (7)
Making successively respectively has a heavily p-type doped region (6) and lightly p-type doped region (5), heavily p-type doped region (6) and lightly p-type doped region (5)
Being made above intersectional region has heavy n-type doped region I (4).
3. a kind of lateral isolation grid-type photoconductivity switching according to claim 1, it is characterised in that：The grid (2) with
Using electric isolution between cathode (1).
4. a kind of lateral isolation grid-type photoconductivity switching according to claim 2, it is characterised in that：The heavily p-type doping
Area (6), lightly p-type doped region (5), the concentration of lightly n-type doped region (7) and thickness parameter will ensure lightly n-type doped region (7) and weight p
The space-charge region of the reverse p-n junctions formed between type doped region (6), lightly p-type doped region (5) elder generation with the increase of bias voltage
Semi-insulating substrate (8) side expanded to, rather than first expand to heavy n-type doped region I (4).
5. a kind of lateral isolation grid-type photoconductivity switching according to claim 2, it is characterised in that：The lightly n-type doping
The space-charge region punch through voltage threshold of the reverse p-n junctions formed between area (7) and heavily p-type doped region (6), lightly p-type doped region (5)
Value is 0.01-0.5 times of the nominal DC bias voltage of photoconductivity switching.
6. a kind of production method of lateral isolation grid-type photoconductivity switching, it is characterised in that：Specifically include following process：
Step 1, the epitaxial growth lightly n-type doped region (7) in semi-insulating substrate (8)；
Step 2, it in the upper surface of extension lightly n-type doped region (7), opens a window to form heavily p-type doped region (6) by photoetching；
Step 3, it in the upper surface of extension lightly n-type doped region (7), opens a window to form lightly p-type doped region (5) by photoetching；
Step 4, it in the upper surface of lightly p-type doped region (5) and heavily p-type doped region (6), is mixed by photoetching windowing with forming heavy n-type
Miscellaneous area I (4)；
Step 5, it in lightly n-type doped region (7), lightly p-type doped region (5) and heavily p-type doped region (6) upper surface, is opened a window by photoetching
Insulating layer (3) is made, grid (2) is made on insulating layer (3)；
Step 6, cathode (1) is made in heavily p-type doped region (6) and heavy n-type doped region I (4) upper surface；
Step 7, heavy n-type doped region II (9) is made in the lower surface of semi-insulating substrate (8), below heavy n-type doped region II (9)
Make anode (10).
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