CN105826406A - Insulated-gate photoconductive semiconductor switch - Google Patents
Insulated-gate photoconductive semiconductor switch Download PDFInfo
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- CN105826406A CN105826406A CN201610161024.4A CN201610161024A CN105826406A CN 105826406 A CN105826406 A CN 105826406A CN 201610161024 A CN201610161024 A CN 201610161024A CN 105826406 A CN105826406 A CN 105826406A
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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Abstract
This present invention provides a novel photoconductive semiconductor switch (PCSS) comprising: a semi-insulating substrate, an anode formed on the upper surface of said semi-insulating substrate, a first n-type doped layer formed on the lower surface of said semi-insulating substrate, a p-type doped layer formed on said first n-type doped layer, a second n-type doped layer formed on said p-type doped layer, a cathode formed on said second n-type doped layer, several recesses facing towards said first n-type doped layer and vertically extending into a part of said first n-type doped layer, an insulating layer formed on said second n-type doped layer and on the walls and the bottoms of said recesses, a gate electrode consisting of two parts, one part of the which formed on said insulating layer on the walls and the bottoms of recesses, and the other part of the which formed on a part of the insulating layer on the second n-type doped layer for electrically connecting the part of the gate electrode on the recesses, wherein the cathode and the gate electrode are electrically isolated.
Description
Technical field
The present invention relates to technical field of semiconductors, lead switch in particular to a kind of novel photoelectric.
Background technology
Photoconductivity switching (the photoconductivesemiconductorswitch triggered by ultra-short pulse laser, abbreviation PCSS) it is the high-power switchgear device of a kind of low jitter, ultra broadband, electromagnetism interference, according to photo-generated carrier, whether avalanche multiplication is divided into two kinds of mode of operation linear models and high gain mode (also referred to as nonlinear model or locking mode).Traditional photoconductivity switching is made up of anode, SI-substrate, negative electrode, described SI-substrate is typically to introduce deep-level impurity or defect carries out altimetric compensation to the semiconductor crystal of low-resistivity and obtains, such as gallium nitride (GaN:Fe) and the carborundum (SiC:V) of vanadium doping of Fe2O3 doping.As a example by GaN material, incorporation of concentration is needed to be up to 1017cm-3Above Fe impurity, just can make the resistivity of GaN crystal reach high resistant level, and such GaN:Fe crystal just can serve as the SI-substrate of traditional photoconductivity switching.But owing to being difficult to avoid that there is the deep energy level of high concentration, the dark electric resistance of traditional photoconductivity switching presents the most non-linear, to such an extent as to the dark-state leakage current of this switch raises along with DC offset voltage and significantly increases, until puncturing.Photoconductivity switching leakage problem under DC voltage bias limits its DC break down voltage ability, owing to the average drift velocity of photo-generated carrier is generally in proportion to bias voltage, therefore also limit the photoelectric current peak value of photoconductivity switching output.
Additionally, the photoconductivity switching made for GaAs, InP material, there is under high bias voltage high multiplication mode of operation.The remarkable advantage of this mode of operation is: due to photo-generated carrier generation avalanche multiplication, not only can trigger with the low light level, and the rising edge of gained photoelectric current pulse can significantly faster than trigger the rising edge of light, therefore light-pulse generator can be with the with low cost and laser diode of good portability rather than expensive heavy power pulse laser.The major defect of the photoconductivity switching that this GaAs, InP material makes is: enters height multiplication mode of operation after current and " locks ", unless the biased electrical field energy being applied on SI-substrate is reduced rapidly to below the threshold field needed for high multiplication, otherwise this switch can not turn off within nanosecond even musec order voluntarily.
For above-mentioned problem, existing solution is: with the little high-voltage pulsed source of dutycycle as the bias voltage source of photoconductivity switching, such as Marx (Marx) circuit, the dark-state leakage current of photoconductivity switching can be suppressed, and the photoconductivity switching that GaAs, InP material can be forced to make exits high multiplication mode of operation.But, high-voltage pulsed source is generally containing multiple high-power components, and to consider the difficulty of Impedance Matching on Transmission Line between them, and the most such system has the shortcoming that cost is high and portability is poor, and when needs high repetition frequency, this shortcoming is especially apparent.
Summary of the invention
It is an object of the invention to provide a kind of novel photoelectric and lead switch, to improve above-mentioned problem.
nullEmbodiments provide a kind of photoconductivity switching device，Comprising: SI-substrate、The anode made on the upper surface of this SI-substrate、The the first N-shaped doped layer made on the lower surface of this SI-substrate、The p-type doped layer made on this first N-shaped doped layer、The the second N-shaped doped layer made on this p-type doped layer、The negative electrode made on this second N-shaped doped layer、Vertically extend and arrive multiple grooves of a part of this first N-shaped doped layer towards described first N-shaped doped layer、The insulating barrier made on the bottom of the plurality of groove and cell wall and described second N-shaped doped layer、And the grid made on the insulating barrier on the bottom and cell wall of the plurality of groove and the grid made in a part for the insulating barrier being positioned on described second N-shaped doped layer for guaranteeing the grid of the plurality of groove to be electrically connected to each other，Wherein it is electrically isolated between negative electrode and grid，By designing described first N-shaped doped layer、Described p-type doped layer and the concentration of described second N-shaped doped layer and thickness parameter are to guarantee that the space-charge region of the reverse p-n junction formed between described first N-shaped doped layer and described p-type doped layer first expands to described SI-substrate side with the increase of bias voltage，Rather than first expand to described second N-shaped doped layer.
Preferably, the position relationship between negative electrode, insulating barrier and grid on described second N-shaped doped layer is: described negative electrode is on the surface of described second N-shaped doped layer, described insulating barrier is on the surface of described negative electrode, described grid is on the surface of described insulating barrier, and the most described groove is to reach in the part of described first N-shaped doped layer through described cathode layer, described second N-shaped doped layer and described p-type doped layer.
Preferably, the position relationship between negative electrode, insulating barrier and grid on described second N-shaped doped layer is: described negative electrode is on a part of surface of described second N-shaped doped layer, described insulating barrier is on the surface not covered by negative electrode of described second N-shaped doped layer, described grid on the surface of described insulating barrier and and described negative electrode between have certain interval to guarantee electric isolution, the most described groove is to reach in the part of described first N-shaped doped layer through described second N-shaped doped layer and described p-type doped layer.
Preferably, described first N-shaped doped layer, described p-type doped layer, described second N-shaped doped layer, described insulating barrier and described grid form metal insulatioin semiconductor field effect transistor structure, the grid of the most each metal insulatioin semiconductor field effect transistor unit is arranged on the described grid of described bottom portion of groove, and multiple metal insulatioin semiconductor field effect transistor unit are electrical parallel relations.
Preferably, the design requirement of number, shape and the arrangement mode of described metal insulatioin semiconductor field effect transistor unit is: 1) be conducive to reducing the electric current density of photoconductivity switching；2) the total channel leakage stream of the plurality of MISFET unit is little；3) it is easy to follow-up packaging technology.
Preferably, the breakdown voltage threshold of the reverse p-n junction between the first N-shaped doped layer and p-type doped layer is the arbitrary value between 0.1-0.9 times of nominal DC bias voltage of described photoconductivity switching device.
Beneficial effect: the novel photoelectric of the present invention is led switch and improved the problem that the direct current dark-state leakage current of traditional photoconductivity switching is big, therefore, compared with the traditional longitudinal type photoconductivity switching with same substrate, its DC break down voltage is higher and its photoelectric current peak value of pulse is higher.Additionally, the photoconductivity switching of the present invention improves the conventional photoconductive made with GaAs, InP material switchs the electric current lockout issue under direct current biasing.Switching without using high-voltage pulse power source because the novel photoelectric of the present invention is led, such as Marx circuit, so it has the advantage that system cost is low, the most portable and repeated work frequency is high.
Accompanying drawing explanation
Fig. 1 is the exemplary part sectioned view that the novel photoelectric of the present invention leads switching device structure；
Fig. 2 is the pattern of the embodiment schematically showing the layout of multiple groove and electrical connection thereof；
Fig. 3 is the pattern of another embodiment schematically showing the layout of multiple groove and electrical connection thereof；
Fig. 4 is that one reasonably triggers signal sequence；
Fig. 5 is that another kind reasonably triggers signal sequence；
Fig. 6 is the schematic diagram of the anode surface incidence of the pulse laser switching device from the present invention；
Fig. 7 is the schematic diagram of the incident sideways of the SI-substrate of the pulse laser switching device from the present invention.
In figure, 1-anode, 2-negative electrode, 3-grid, 4-insulating barrier, 6-SI-substrate (i.e. laser triggering district), 7-grid trigger region, 9-pulse laser, 12-n type doped layer, 13-p type doped layer, 14-n type doped layer.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments of the present invention, technical scheme is clearly and completely described.
Fig. 1 is the sectional view of the photoconductivity switching device architecture of the present invention.nullAs shown in Figure 1，The photoconductivity switching device that the present invention provides includes: SI-substrate 6、The anode 1 made on the upper surface of this SI-substrate 6、The N-shaped doped layer 12 made on the lower surface of this SI-substrate 6、The p-type doped layer 13 made on this N-shaped doped layer 12、The N-shaped doped layer 14 made on this p-type doped layer 13、The negative electrode 2 made on N-shaped doped layer 14、Vertically extend and arrive multiple grooves of a part of this N-shaped doped layer 12 towards N-shaped doped layer 12、The insulating barrier 4 made on the bottom of the plurality of groove and cell wall and N-shaped doped layer 14、And the grid 3 made on the insulating barrier 4 on the bottom and cell wall of the plurality of groove and the grid 3 made in a part for the insulating barrier 4 being positioned on N-shaped doped layer 14 for guaranteeing the grid 3 of the plurality of groove to be electrically connected to each other，Wherein it is electrically isolated between negative electrode 2 and grid 3.
Additionally, by designing described first N-shaped doped layer, described p-type doped layer and the concentration of described second N-shaped doped layer and thickness parameter to guarantee that the space-charge region of the reverse p-n junction formed between described first N-shaped doped layer and described p-type doped layer first expands to described SI-substrate side rather than first expands to described second N-shaped doped layer with the increase of bias voltage.
In one embodiment, the position relationship between negative electrode 2, insulating barrier 4 and grid 3 on N-shaped doped layer 14 is: negative electrode 2 is in the local surfaces of N-shaped doped layer 14, and insulating barrier 4 is in the local surfaces of negative electrode 2, and grid 3 is on the surface of insulating barrier 4.In this case, groove is to reach in the part of N-shaped doped layer 12 through negative electrode 2, N-shaped doped layer 14 and p-type doped layer 13；Owing to being covered with insulating barrier 4 on the bottom of groove and cell wall, so be electrically isolated between negative electrode 2 and grid 3.
In another embodiment, the position relationship between negative electrode 2, insulating barrier 4 and grid 3 on N-shaped doped layer 14 is: negative electrode 2 is on a part of surface of N-shaped doped layer 14, insulating barrier 4 on the surface not covered by negative electrode 2 of N-shaped doped layer 14, grid 3 on the surface of insulating barrier 4 and and negative electrode 2 between have certain interval with guarantee electric isolution.In this case, groove is to reach in the part of N-shaped doped layer 12 through N-shaped doped layer 14 and p-type doped layer 13.
Generally, laser is incident from anode surface or from the incident sideways of SI-substrate, such as, shown in Fig. 6 and 7, meeting produces photo-generate electron-hole pair in SI-substrate, and therefore SI-substrate 6 is here referred to as laser triggering district 6.Because at work, the grid voltage of enforcement can trigger N-shaped doped layer 12, p-type doped layer 13 and the electronics of N-shaped doped layer 14 or hole is movable, so N-shaped doped layer 12, p-type doped layer 13 and N-shaped doped layer 14 here can also merge referred to as grid trigger region 7.
The plurality of groove is to perform etching from N-shaped doped layer 14 towards the direction of N-shaped doped layer 12 with etching technics.The section shape of each of the plurality of groove is " V " word or " U " word, i.e. V-groove or U-type groove.The structure of the above-mentioned grid 3 made in a part for the insulating barrier 4 being positioned on N-shaped doped layer 14 for guaranteeing the grid 3 of multiple groove to be electrically connected to each other can use any electric connection mode well known in the art, the pattern of an example of the layout of multiple grooves that such as Fig. 2 and 3 is schematically shown respectively and the mode that is electrically connected to each other.
Described N-shaped doped layer 12, p-type doped layer 13, N-shaped doped layer 14, insulating barrier 4 and grid 3 form metal insulatioin semiconductor field effect transistor (MISFET) structure of n-type channel, and the MISFET structure comprising the grid 3 being arranged in a groove is a MISFET unit.Knowable to the source electrode of common MISFET device and drain electrode naming rule, the doped layer 12 being connected with the hot end of n-type channel can be considered the drain electrode of this MISFET structure, and therefore the drain electrode of each MISFET unit is to be electrically connected to each other.The doped layer 14 being connected with the cold end of raceway groove can be considered the source electrode of MISFET structure.Grid 3 can be considered the grid of MISFET structure.So, because the source electrode of multiple MISFET unit, drain and gate are all each to be electrically connected, so multiple MISFET unit are electrical parallel relations, its advantage is that on state resistance is the least, and in high-voltage applications, the on-state voltage drop on MISFET unit is negligible.The integrally-built equivalent circuit of the plurality of MISFET unit is a preferable n-channel MISFET element.Additionally, it is preferred that, the design principle of the number of the plurality of MISFET unit, shape and arrangement mode (i.e. the number of groove, shape and arrangement mode) is: 1) be conducive to reducing the electric current density of photoconductivity switching；2) the total channel leakage stream of the plurality of MISFET unit is little；3) it is easy to follow-up packaging technology.
Known material can be used to make anode 1.When the optical maser wavelength encouraging photoconductivity switching device is prescribed a time limit less than the Intrinsic Gettering of SI-substrate material, because optical absorption depth is little, laser from anode surface incidence, should now be suitable for the known materials such as the tin indium oxide of use transparent and electrically conductive as anode；When optical maser wavelength more than SI-substrate material Intrinsic Gettering in limited time, because optical absorption depth is big, laser now should can use common metal as anode from the incident sideways of SI-substrate, and be not limited to the material of transparent and electrically conductive.Known sputtering method, CVD etc. can be used to make.
Described N-shaped doped layer 12, p-type doped layer 13 and N-shaped doped layer 14 can be made by epitaxial growth method, naturally it is also possible to use other technique.
Known material can be used to make insulating barrier 4, such as, can use the silicon oxide (SiO of densification2), silicon nitride (Si3N4) etc. material.Known sedimentation or cladding process etc. can be used to make.
Known metal material can be used to make grid 3, such as, can use aluminum (Al), nickel (Ni), gold (Au), copper (Cu) etc..Known sputtering method, CVD etc. can be used to make.
Known metal material can be used to make negative electrode 2, such as aluminum (Al), gold (Au), copper (Cu) etc..Known sputtering method, CVD etc. can be used to make.
In practice, by parameters such as the concentration of each doped layer of appropriate design (doped layer 12,13 and 14) and thickness, to guarantee that the space-charge region of reverse p-n junction formed between doped layer 12 and 13 first expands to side, laser triggering district 6 with the increase of bias voltage, rather than first expand to doped layer 14, therefore this reverse p-n junction is equivalent to a Zener diode, its breakdown voltage threshold (Vth) can be designed as the arbitrary value between 0.1-0.9 times of the nominal DC bias voltage of this photoconductivity switching.Although there is also a forward p-n junction between doped layer 13 and 14, but its voltage drop caused being the least, is negligible.The resistance of doped layer 13,14,15 is the least, and the voltage drop caused can be ignored.Therefore, when this photoconductivity switching applying bias voltage is more than breakdown voltage threshold VthTime, the voltage of grid trigger region 7 is approximately constant Vth。
The novel photoelectric of the present invention is led the work process of switch and is comprised the following steps:
1), when static state (when laser trigger signal not yet incides described switching device), laser triggering district 6 and grid trigger region 7 bear external dc bias voltage U jointlys, wherein the voltage of grid trigger region 7 is Vth, so the voltage in laser triggering district 6 is (Us-Vth), this value can be slightly less than its SI-substrate maximum DC break down voltage.As it was previously stated, the resistivity of SI-substrate is nonlinear, voltage is the biggest, and resistivity is the least, then the resistance in laser triggering district 6 is the function of its voltage, is expressed as R (u), and therefore the photoconductivity switching leakage current when above-mentioned static state isDark-state leakage current less than the conventional photoconductive switch made by same substrate and under identical DC offset voltage
2) when positive voltage signal is applied to grid, the raceway groove making MISFET unit is open-minded within the nanosecond order time, the electronics of doped layer 14 can flow to doped layer 12 by raceway groove, i.e. grid trigger region 7 is opened, the voltage originally born on grid trigger region 7 is transferred to laser triggering district 6, makes laser triggering district 6 start dynamically and bears the high pressure U that could possibly be higher than self DC break down voltage abilitys.As it is known by the man skilled in the art that quasiconductor can bear more than the maximum pressure several times of big high voltage transient U of self direct currents.Then, before laser triggering district 6 occurs high-tension electricity to puncture, start below step 3.
3) producing photo-generate electron-hole pair with pulse laser 9 irradiating laser trigger region 6, electron-hole pair separates under electric field action, moves to anode and cathode direction respectively, and laser triggering district 6 is opened.So far photoconductivity switching device is opened, external output photoelectric stream.
4) when stopping applying pumping signal (pulse laser and grid voltage), the nonequilibrium carrier in laser triggering district 6 can disappear because being absorbed by the electrode and be combined, thus substrate recovers high-impedance state；Apply to grid to make the conducting channel of MISFET unit close within the short time of nanosecond (ns) magnitude with no-voltage or negative voltage signal, thus the p-n junction between doped layer 12 and 13 recovers reverse breakdown state.Now laser triggering district 6 and grid trigger region 7 are all turned off, and photoconductivity switching returns to aforesaid quiescent period.
The novel photoelectric of the present invention leads the signal sequence of switch, requires nothing more than and guarantees that grid trigger region 7 is opened prior to laser triggering district 6.Therefore two kinds of possible sequential of signal existence remove to turn off the switch of the present invention, the most as shown in Figure 4 and Figure 5.
Fig. 4 is the working timing figure triggering signal, and dotted line represents grid voltage, and solid line represents laser pulse shape, and chain-dotted line represents the nonequilibrium carrier number in laser triggering district 6, t1Represent the initial time of photoconductivity switching output current impulse, t2Represent the finish time of photoconductivity switching current impulse.This sequential is applicable to the linear operation mode of photoconductivity switching.After laser stops irradiating, photo-generated carrier absorbs because of compound and electrode and quickly disappears, thus substrate recovers high-impedance state, and so far photoconductivity switching output electric current goes to zero.Then, applying to grid so that the conducting channel of MISFET unit cut out within the short time of ns magnitude with no-voltage or negative voltage signal, thus the p-n junction between doped layer 12 and 13 recovers reverse breakdown state, grid trigger region 7 is turned off.
Fig. 5 is another working timing figure triggering signal, and dotted line represents grid voltage, and solid line represents laser pulse shape, and chain-dotted line represents nonequilibrium carrier number in laser triggering district 6, t1Represent the initial time of photoconductivity switching output current impulse, t2Represent the finish time of photoconductivity switching output current impulse.This sequential is applicable to the non-linear process planning of photoconductivity switching.After laser stops irradiating, in SI-substrate, carrier avalanche multiplication is still continuing so that laser triggering district 6 can not turn off voluntarily.Applying to grid so that the conducting channel of MISFET unit cut out within the short time of ns magnitude with no-voltage or negative voltage signal, the voltage in laser triggering district 6 quickly shifts to grid trigger region 7 in the process.Time below threshold voltage needed for the electric field in laser triggering district 6 is down to high gain mode, laser triggering district 6 can exit high multiplication mode of operation and gradually recover high-impedance state.
The novel photoelectric of the embodiment of the present invention is led switching device and is provided the benefit that: the novel photoelectric of the present invention is led switch and improved the problem that the direct current dark-state leakage current of traditional photoconductivity switching is big, therefore, compared with the traditional photoconductivity switching with same substrate, its DC break down voltage is higher and its photoelectric current peak value of pulse is higher.Additionally, the photoconductivity switching of the present invention improves the conventional photoconductive made with GaAs, InP material switchs the electric current lockout issue under direct current biasing.Switching without using high-voltage pulse power source because the novel photoelectric of the present invention is led, such as Marx circuit, so it has the advantage that system cost is low, the most portable and repeated work frequency is high.
Known semiconductor technology can be used to lead switching device to the novel photoelectric making the present invention, those skilled in the art read description of the invention and be well understood to photoconductivity switching device said structure after, known semiconductor technology can be used to produce this photoconductivity switching device, the most too much describe its making step.
The present invention is further described below by instantiation.
With HVPE method growth diameter in sapphire substrates be 2 inches, thickness (D) be that 600-4000 μm, dark electric resistance rate are more than 1 × 108The semi-insulating GaN of Ω cm: Fe substrate.In order to avoid current convergence, N-shaped doped layer 12 by thickness be 1.5-3 μm, concentration be 1 × 1015-1×1018cm-3Highly doped n-type epitaxial layer and the thickness that grows thereon be 0.5-15 μm, concentration be 1 × 1013-1×1016cm-3Lightly doped n-type epitaxial layer composition.The thickness of p-type doped layer 13 is 10-200 μm, and concentration is 1 × 1014-1×1017cm-3.The thickness of N-shaped doped layer 14 is 0.1-3 μm, and concentration is 1 × 1015-1×1021cm-3.Reversely breakdown voltage threshold V of p-n junctionth, its scope should be in 20-2 × 104V.As shown in Figure 2, such as 1-10 is made by conventional longitudinal type MISFET technique4Individual U-shaped n-channel MISFET unit, wherein the recess etch degree of depth is to 1-15 μm in entrance N-shaped doped layer 12, and insulating layer material is Si3N4, deposition thickness is 1-15 μm.
Test laser is from Q-switch YAG laser, and laser pulse width is 1ns, and wavelength is 532nm.Laser irradiates the mode of photoconductivity switching as shown in Figure 7.The a diameter of 0.5mm of optical fiber every, is divided into 11 bundles to be arranged on the left and right sides of photoconductivity switching, relative with interdigital direction mutually, photoelectric current can be made more to be evenly distributed, improve device through-current capability.
Arranging external dc bias voltage Us is VthTwice (i.e. DC offset voltage on SI-substrate layer is also Vth).Trigger the sequential of signal as shown in Figure 4.Obtaining 10V gate trigger voltage signal with the conventional driver circuits of MISFET power device, rising edge is 20ns, and trailing edge is 30ns, and pulsewidth is 80ns.Laser instrument sends the laser pulse that energy is 5mJ after MISFET unit is opened.Because the pulsewidth of laser instrument used only 1ns, and the GaN:Fe carrier lifetime only subnanosecond order of magnitude, so the output electric pulse waveform that the novel photoelectric of the present invention leads switch approximates with laser waveform, pulsewidth slightly broadening.Speed according to GaN-field characteristic curve, is less than in the range of 150kV/cm at bias field, and photo-generated carrier average drift velocity is approximately proportional to the bias field of SI-substrate layer.Therefore at satisfied (Us/D), < during 150kV/cm relational expression, Us is the biggest, then the peak value of the photoelectric current pulse of the present embodiment is the biggest.
Semi-insulating GaN with same: the longitudinal type photoconductivity switching that Fe wafer manufacturing one is traditional, leads switch with the novel photoelectric of the present invention and compares test.When the two external dc bias voltage is equal, the dark-state leakage current of this traditional photoconductivity switching than the novel photoelectric of the present invention lead switch when static state leakage current big 1 times and more than.When SI-substrate layer direct current biasing electric field at the two is equal and is less than 150kV/cm, the photoelectric current peak value that the novel photoelectric of the photoelectric current peakedness ratio present invention of this traditional photoconductivity switching leads switch is little about 1 times.
The above; being only the detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, any those familiar with the art is in the technical scope that the invention discloses; change can be readily occurred in or replace, all should contain within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with described scope of the claims.
Claims (6)
- null1. a photoconductivity switching device，Comprising: SI-substrate、The anode made on the upper surface of this SI-substrate、The the first N-shaped doped layer made on the lower surface of this SI-substrate、The p-type doped layer made on this first N-shaped doped layer、The the second N-shaped doped layer made on this p-type doped layer、The negative electrode made on this second N-shaped doped layer、Vertically extend and arrive multiple grooves of a part of this first N-shaped doped layer towards described first N-shaped doped layer、The insulating barrier made on the bottom of the plurality of groove and cell wall and described second N-shaped doped layer、And the grid made on the insulating barrier on the bottom and cell wall of the plurality of groove and the grid made in a part for the insulating barrier being positioned on described second N-shaped doped layer for guaranteeing the grid of the plurality of groove to be electrically connected to each other，Wherein it is electrically isolated between negative electrode and grid，By designing described first N-shaped doped layer、Described p-type doped layer and the concentration of described second N-shaped doped layer and thickness parameter are to guarantee that the space-charge region of the reverse p-n junction formed between described first N-shaped doped layer and described p-type doped layer first expands to described SI-substrate side with the increase of bias voltage，Rather than first expand to described second N-shaped doped layer.
- Photoconductivity switching device the most according to claim 1, it is characterized in that, the position relationship between negative electrode, insulating barrier and grid on described second N-shaped doped layer is: described negative electrode is on the surface of described second N-shaped doped layer, described insulating barrier is on the surface of described negative electrode, described grid is on the surface of described insulating barrier, and the most described groove is to reach in the part of described first N-shaped doped layer through described cathode layer, described second N-shaped doped layer and described p-type doped layer.
- Photoconductivity switching device the most according to claim 1, it is characterized in that, negative electrode on described second N-shaped doped layer, position relationship between insulating barrier and grid is: described negative electrode is on a part of surface of described second N-shaped doped layer, described insulating barrier is on the surface not covered by negative electrode of described second N-shaped doped layer, described grid on the surface of described insulating barrier and and described negative electrode between have certain interval with guarantee electric isolution, the most described groove is to reach in the part of described first N-shaped doped layer through described second N-shaped doped layer and described p-type doped layer.
- Photoconductivity switching device the most according to claim 1, it is characterized in that, described first N-shaped doped layer, described p-type doped layer, described second N-shaped doped layer, described insulating barrier and described grid form metal insulatioin semiconductor field effect transistor structure, the grid of the most each metal insulatioin semiconductor field effect transistor unit is arranged on the described grid of described bottom portion of groove, and multiple metal insulatioin semiconductor field effect transistor unit are electrical parallel relations.
- Photoconductivity switching device the most according to claim 4, it is characterised in that the design requirement of number, shape and the arrangement mode of described metal insulatioin semiconductor field effect transistor unit is: 1) be conducive to reducing the electric current density of photoconductivity switching；2) the total channel leakage stream of the plurality of MISFET unit is little；3) it is easy to follow-up packaging technology.
- Photoconductivity switching device the most according to claim 1, it is characterized in that, the breakdown voltage threshold of the reverse p-n junction between the first N-shaped doped layer and p-type doped layer is the arbitrary value between 0.1-0.9 times of the nominal DC bias voltage of described photoconductivity switching device.
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| CN114267749A (en) * | 2021-12-22 | 2022-04-01 | 电子科技大学 | Photoconductive semiconductor switch based on graphene film |
| US11581448B2 (en) | 2021-04-01 | 2023-02-14 | Raytheon Company | Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors |
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| US11581448B2 (en) | 2021-04-01 | 2023-02-14 | Raytheon Company | Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors |
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