CN108734154B - Packaging method and packaging structure of ultrathin fingerprint identification chip - Google Patents
Packaging method and packaging structure of ultrathin fingerprint identification chip Download PDFInfo
- Publication number
- CN108734154B CN108734154B CN201810841274.1A CN201810841274A CN108734154B CN 108734154 B CN108734154 B CN 108734154B CN 201810841274 A CN201810841274 A CN 201810841274A CN 108734154 B CN108734154 B CN 108734154B
- Authority
- CN
- China
- Prior art keywords
- layer
- fingerprint identification
- chip
- packaging
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000004033 plastic Substances 0.000 claims abstract description 60
- 229920003023 plastic Polymers 0.000 claims abstract description 60
- 239000002131 composite material Substances 0.000 claims abstract description 56
- 230000001681 protective effect Effects 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000004140 cleaning Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 24
- 238000011068 loading method Methods 0.000 claims abstract description 22
- 238000007789 sealing Methods 0.000 claims abstract description 21
- 238000005498 polishing Methods 0.000 claims abstract description 13
- 238000012858 packaging process Methods 0.000 claims abstract description 8
- 238000011417 postcuring Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000003698 laser cutting Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 72
- 239000002184 metal Substances 0.000 claims description 72
- 229920005989 resin Polymers 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 21
- 238000005538 encapsulation Methods 0.000 claims description 18
- 230000006698 induction Effects 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 239000004814 polyurethane Substances 0.000 claims description 7
- 229920002635 polyurethane Polymers 0.000 claims description 7
- 239000013464 silicone adhesive Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 6
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 4
- -1 polyethylene naphthalate Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 13
- 238000000748 compression moulding Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 141
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000005299 abrasion Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 208000010247 contact dermatitis Diseases 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000009517 secondary packaging Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
Landscapes
- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The invention discloses a packaging method and a packaging structure of an ultrathin fingerprint identification chip, which belong to the field of fingerprint identification chip packaging, and comprise the following process flows: performing plasma cleaning on the wafer and the substrate frame; the composite protective film is attached to the loading film and then attached to the back surface of the substrate frame; flip-chip mounting the chips on the wafer to the front surface of the substrate frame by using a chip mounter; using a compression molding process to mold the chip and the substrate frame; post-curing of the plastic packaging product; a plastic sealing layer polishing and thinning process of a plastic sealing product; separating the loading film by a de-bonding process; polishing and thinning the composite protective film of the plastic package product; coating a wear-resistant layer on the outer side of the thinned composite protective film; and (5) laser cutting and forming. The invention obtains reliable binding force between the composite protective film and the ultrathin fingerprint identification chip, the substrate frame and the plastic package material, solves the problem of poor appearance of the product, and has simple whole packaging process.
Description
Technical Field
The invention relates to a packaging method and a packaging structure of an ultrathin fingerprint identification chip, and belongs to the field of fingerprint identification chip packaging.
Background
Fingerprints are unique characteristics of human bodies, and fingerprint identification technology is a key of the current biological identification technology. The mobile phone is an indispensable part of people's daily life nowadays, and because the frequency of use is frequent, the repeated input of passwords also makes people feel very inconvenient, has fingerprint identification system, makes the user feel more convenient and faster and safer.
However, the reliability performance of the fingerprint identification chip cannot meet the test requirement, and the fingerprint identification chip needs to be subjected to secondary packaging so as to meet the requirements of reliability, ultra-thin performance, under-screen performance and the like, which meet the current development trend of mobile phones. Currently, subbstrate packaging is commonly adopted in the field of fingerprint identification, but in the actual production process, a large number of appearance defects are found on the surface of a fingerprint identification product, such as Die Mark and Dent shown in fig. 1.
Disclosure of Invention
The invention mainly aims at the defects of the prior packaging technology, and provides a packaging method and a packaging structure for an ultrathin fingerprint identification chip with improved appearance.
The purpose of the invention is realized in the following way:
the invention provides a packaging method of an ultrathin fingerprint identification chip, which comprises the following process flows:
step one: the wafer and the substrate frame are subjected to plasma cleaning by taking argon and hydrogen as cleaning gases, wherein a plurality of ultrathin fingerprint identification chip units which complete the packaging process are arranged on the wafer, a dielectric layer is arranged on the front surface of the wafer, and solder balls are arranged on the back surface of the wafer;
step two: the composite protective film is attached to the loading film and then attached to the back surface of the substrate frame after the cleaning in the step one;
step three: using a chip mounter to flip the ultrathin fingerprint identification chip unit in the first step to the position of the chip to be mounted on the front surface of the substrate frame after the second step is completed;
step four: using an ultra-thin fingerprint identification chip unit and a substrate frame in a compression molding process (C-mold) plastic packaging step three to form a plastic packaging product;
step five: performing post-curing (PMC) process on the plastic package product in the step four;
step six: polishing and thinning the plastic sealing layer of the cured plastic sealing product obtained in the step five to expose the welding surface of the solder ball;
step seven: separating the loading film by adopting a de-bonding process;
step eight: polishing and thinning the composite protective film of which the loading film is peeled off;
step nine: coating a wear-resistant layer on the outer side of the thinned composite protective film;
step ten: the laser dicing forms individual packages while removing the substrate frame.
In the second step of the invention, the composite protective film comprises a base layer and a semi-cured resin layer, wherein the base layer is made of polyimide or PEN (polyethylene naphthalate), the base layer contains atomized particles, the haze is 3-5%, the transmittance is 95-98%, and the semi-cured resin layer is PSA or silicone adhesive (silicone adhesive).
The thickness of the base layer is 20-30 microns.
The inner side of the base layer is provided with a layer of wear-resistant polyurethane to form a wear-resistant layer, and the hardness of the wear-resistant layer is 2H or 3H.
The thickness of the semi-cured resin layer is 10-18 microns.
In the fourth step of the invention, the plastic package thickness of the plastic package formed product is larger than the design thickness of the product, and the error of the plastic package thickness is controlled: +/-15 microns.
In the eighth step of the present invention, the thickness of the composite protective film is thinned to 20 micrometers +/-2 micrometers, and the surface roughness Ra thereof is as follows: 0.2 to 0.5 μm.
In the seventh step of the present invention, before separating the loading film, the plastic packaged product in the sixth step needs to be baked at 180 ℃ for 4 hours.
The invention also provides a packaging structure of the ultrathin fingerprint identification chip, which comprises a fingerprint identification sensor chip and an encapsulation body, wherein the front surface of the fingerprint identification sensor chip is provided with a fingerprint induction identification area and a plurality of chip electrodes, the chip electrodes are arranged on one side of the fingerprint induction identification area, the encapsulation body encapsulates the fingerprint identification sensor chip and a metal connecting piece, the upper surfaces of the encapsulation body expose the front surface of the fingerprint identification sensor chip, the front surface of the fingerprint identification sensor chip and the upper surface of the encapsulation body cover patterned insulating layers, insulating layer openings are formed at the chip electrodes, the upper surfaces of the insulating layers are selectively provided with front rewiring metal layers, the front rewiring metal layers are distributed on one side of the chip electrodes outside the vertical area of the front surface of the fingerprint induction identification area and are connected with the chip electrodes through the insulating layer openings, the front surface of the fingerprint identification sensor chip is coated with a dielectric layer, the dielectric layer covers the front rewiring metal layers and the insulating layers, the metal connecting piece is arranged on one side of the sensor chip and near the front surface of the fingerprint identification sensor chip, the upper surfaces of the encapsulation body are correspondingly provided with the metal layers, the metal layers penetrate through the bottom of the top surface of the encapsulation body, the metal layers are exposed out of the top metal layers,
the lower surface of the encapsulation body is provided with a back rewiring metal layer and a back plastic sealing layer, one end of the back rewiring metal layer is provided with a solder ball, the other end of the back rewiring metal layer is connected with the bottom of the metal connecting piece, the metal connecting piece and the back rewiring metal layer are of an integrated structure, the back plastic sealing layer covers the back rewiring metal layer, the encapsulation body and the four walls of the dielectric layer and only exposes the welding surface of the solder ball, the front surface of the back plastic sealing layer is flush with the upper surface of the dielectric layer,
the composite protective film comprises a semi-cured resin layer and a base layer, wherein the semi-cured resin layer is connected with the front surface of the dielectric layer and the front surface of the back plastic sealing layer in a bonding way, the base layer contains atomized particles, the haze is 3-5%, the transmittance is 95-98%, and the composite protective film is thinned to 20 micrometers +/-2 micrometers.
The wear-resistant polyurethane layer is arranged on the outer side and/or the inner side of the base layer to form a wear-resistant layer, and the hardness of the wear-resistant layer is 2H or 3H.
Advantageous effects
The packaging method of the ultrathin fingerprint identification chip obtains reliable binding force between the composite protective film and the ultrathin fingerprint identification chip, the substrate frame and the plastic packaging material, solves the problem of poor appearance of products, and improves the yield of the products; meanwhile, the composite protective film and the loading film bear the packaging structure in the whole packaging process, so that the whole packaging process is concise; the thinned composite protective film realizes the ultrathin packaging structure of the fingerprint identification chip, and the combination of the outer wear-resistant layer and the inner wear-resistant layer enhances the reliability and wear resistance of the packaging structure.
Drawings
FIG. 1 is a poor package appearance diagram of a conventional fingerprint identification chip;
FIG. 2 is a process flow diagram of a method for packaging an ultra-thin fingerprint identification chip according to the present invention;
FIG. 3 is a schematic diagram of an embodiment of a package structure of an ultra-thin fingerprint identification chip;
FIG. 4A is a schematic diagram showing the positional relationship between the metal connector and the chip electrode, sensing element area of FIG. 3;
FIG. 4B is a schematic bottom view of the metal connector and backside rewiring metal layer of FIG. 3;
FIG. 5 is a schematic diagram of a method for packaging an ultra-thin fingerprint identification chip according to the present invention;
FIG. 6 is an external appearance effect diagram of a package structure of an ultra-thin fingerprint identification chip according to the present invention;
wherein,,
fingerprint identification sensor chip 1
Chip body 10
Fingerprint sensing identification area 12
Chip electrode 14
Insulating layer 31
Dielectric layer 35
Enclosure 4
Metal connector 5
Front rewiring metal layer 6
Back rewiring metal layer 7
Solder ball 71
Rewiring metal line 72
Back side plastic layer 78
Base plate frame 8
Composite protective film 91
Base layer 911
Semi-cured resin layer 912
Loading film 92
Loaded film base layer 921
The film adhesive layer 921 is loaded.
Detailed Description
For a detailed description of the spirit of the invention, to help those skilled in the art to understand the full technical solution of the invention practically and fully, the following detailed description of the technical solution of the invention will be made with reference to the examples and the accompanying drawings:
the technical scheme adopted by the invention is as follows: the process flow chart of the packaging method of the ultrathin fingerprint identification chip is shown in figure 2, and the method concretely comprises the following steps:
s1: performing plasma cleaning on the wafer and the substrate frame;
s2: the composite protective film is attached to the loading film and then attached to the back surface of the substrate frame;
s3: flip-chip the chip to the front side of the substrate frame using a chip mounter;
s4: using a compression molding process (C-mold) to mold the chip and the solder balls and the substrate frame thereof;
s5: post-curing (PMC) of the molded product;
s6: a plastic sealing layer polishing and thinning process of a plastic sealing product;
s7: a separation and loading membrane process;
s8: polishing and thinning the composite protective film of the plastic package product;
s9: coating a wear-resistant layer on the outer side of the thinned composite protective film;
s10: and (5) laser cutting and forming.
Examples
The invention relates to a packaging structure of an ultrathin fingerprint identification chip, wherein a fingerprint identification sensor chip 1 is rectangular, a cross-section schematic diagram is shown in fig. 3, a fingerprint induction identification area 12 and a plurality of chip electrodes 14 are arranged on the front surface of a chip body 10 of the fingerprint identification sensor chip 1, the chip electrodes 14 are arranged on one side of the fingerprint induction identification area 12 so that the effective detection area of the fingerprint induction identification area 12 is as large as possible, 6 chip electrodes 14 arranged on one side of the fingerprint induction identification area 12 are used for illustration in the figure, an induction element is arranged in the fingerprint induction identification area 12, and a circuit of the induction element and a circuit of the chip electrodes 14 are arranged in the fingerprint identification sensor chip 1.
The fingerprint sensor chip 1 and the metal connector 5 are encapsulated by an encapsulating material, and the material of the encapsulating material is most commonly epoxy resin, phenolic resin, organic silicon resin and unsaturated polyester resin at present. After the encapsulation material is encapsulated and solidified, the solid encapsulation body 4 can play roles in water proofing, moisture proofing, shock proofing, dust proofing, heat dissipation, insulation and the like. Meanwhile, in order to reduce the problem of thermal expansion coefficient of the encapsulating material, the thermal mechanical reliability of the structure is improved, and fillers such as silicon oxide, silicon nitride and the like are added into the encapsulating material.
The upper surface of the envelope 4 exposes the front surface of the fingerprint recognition sensor chip 1. The front surface of the fingerprint identification sensor chip 1 and the upper surface of the encapsulation body 4 are covered with a patterned insulating layer 31, and an insulating layer opening 311 is formed at the chip electrode 14. The insulating layer 31 is made of silicon oxide, silicon nitride, or the like. The front re-wiring metal layer 6 is selectively provided on the upper surface of the insulating layer 31, the front re-wiring metal layer 6 is distributed on one side of the chip electrode 14 outside the vertical area of the front side of the fingerprint sensing area 12, and is connected to the chip electrode 14 through the insulating layer opening 311, and the front re-wiring metal layer 6 is made of copper Cu, iron Fe, nickel Ni, or other materials having good conductivity. The specific number of layers can be set to one or more layers according to the product requirement, and typically, the front rewiring metal layer 6 is a high-density wiring layer, i.e. the line width/line distance is below 5 um. The front surface of the fingerprint identification sensor chip 1 is coated with a dielectric layer I35, and the dielectric layer I35 covers the front surface rewiring metal layer 6 and the insulating layer 31.
The metal connection member 5 is disposed beside the fingerprint sensor chip 1, and preferably the metal connection member 5 is disposed on the same side as the chip electrode 14 of the fingerprint sensor chip 1. The metal connecting piece 5 is in a solid or hollow column shape, and is made of copper Cu, nickel Ni, vanadium V, titanium Ti, palladium Pd, gold Au, silver Ag and the like. Alternatively, the metal connector 5 is a rewiring metal layer and is of unitary construction with the backside rewiring metal layer 7. The top of the metal connection 5 passes through the insulating layer 31 to reach the lower surface of the front-side rewiring metal layer 6 to be connected with the front-side rewiring metal layer 6. The number of the metal connectors 5 and the number of the chip electrodes 14 have no absolute correspondence, and are designed according to actual needs. In fig. 4A, in order to clearly illustrate the connection relationship between the metal connectors 5 and the chip electrodes 14, the number of the metal connectors 5 and the number of the chip electrodes 14 are shown in one-to-one correspondence. The bottom of the metal connector 5 exposes the envelope 4.
The lower surface of the envelope 4 is provided with a back rewiring metal layer 7. The back-side rewiring metal layer 7 is generally made of a metal such as copper Cu, iron Fe, nickel Ni, or the like, which has good electrical conductivity. The specific layer number can be set to one or more layers according to the product requirement, and in general, the back rewiring metal layer 7 is a high-density wiring layer, namely, the line width/line distance is below 5um, so as to improve the electrical reliability. One end of the back rewiring metal layer 7 is provided with a solder ball 71, and the other end thereof is connected to the bottom of the metal connection member 5. The chip electrode on the front surface of the fingerprint recognition sensor chip 1 is led to the back surface of the fingerprint recognition sensor chip 1 to be conducted with the substrate. Therefore, compared with the prior art of the packaging structure of the fingerprint identification sensor, the scheme of the invention also reduces the amount of vertical space required by the fingerprint identification sensor, so that the fingerprint identification sensor is designed at a position closer to the finger of a user, and the contact sensitivity of the fingerprint identification sensor is effectively improved.
The front surface of the fingerprint identification sensor chip 1 is coated with the dielectric layer 35, and the dielectric constant of the dielectric layer 35 is 4.5-6, so that parasitic resistance, capacitance and inductance of a circuit structure are reduced, and meanwhile, good insulation performance of a circuit is ensured.
The back surface plastic layer 78 covers the back surface rewiring metal layer 7, the encapsulation body 4 and the four walls of the dielectric layer 35 and exposes only the solder balls 71, and the front surface thereof is flush with the upper surface of the dielectric layer 35. After back grinding, the solder balls 71 are exposed on the soldering surface for connection to a PCB board or substrate for use. The material of the back side plastic layer 78 typically comprises silicon oxide, silicon nitride, or a resin-based dielectric material. The solder balls 71 can be flexibly arranged and designed according to the positions of different substrates, and generally, the solder balls 71 are arranged in an array shape, and the larger the solder balls are, the better the connection is, and on the other hand, one of the heat dissipation channels of the package structure is. According to the layout of the solder balls 71, as shown in fig. 4B, the solder balls 71 are arranged in an array of 3*2, and the wiring metal layer 7 is used for realizing the electrical connection between the solder balls 71 and the metal connection member 5 in the most convenient wiring scheme, so as to save the production cost.
The composite protective film 91 includes a semi-cured resin layer 912 and a base layer 911. The base layer 911 is made of polyimide, PEN (polyethylene naphthalate) or the like, and has excellent impact resistance and tear resistance. The base layer 911 contains atomized particles, the haze is 3-5%, the transmittance is 95-98%, the diffuse reflection of light in the base layer 911 is uniform, and defects such as concave-convex points, die marks and the like of the packaging structure of the whole ultrathin fingerprint identification chip can be shielded. To enhance the abrasion resistance, a thin layer of abrasion-resistant polyurethane is provided on the outer side and/or inner side of the base layer 911 to form an abrasion-resistant layer, the hardness of which is 2H or 3H, so that the film surface can be further prevented from being scratched. The semi-cured resin layer 912 is adhesive PSA, silicone adhesive (silicone adhesive) or the like, has a thickness of 5 to 18 micrometers, softens under heat and pressure, has adhesive properties, and reacts to cure after cooling. Through a molding process (C-mold), the semi-cured resin layer 912 side of the composite protective film 91 is connected with the front surface of the dielectric layer 35 and the front surface of the back surface plastic sealing layer 78 of the fingerprint identification sensor chip 1 in a bonding way, so that the reliable bonding force between the composite protective film and the ultrathin fingerprint identification packaging structure can be obtained, and the packaging yield of products is improved.
The thickness of the composite protective film 91 is thinned to 20 micrometers +/-2 micrometers, so that on one hand, the ultrathin packaging thickness is obtained, on the other hand, flaws on the surface of the composite protective film 91 can be removed, and meanwhile, the sensitivity quick response speed of the fingerprint chip is improved.
The thickness of the under-screen ultrathin fingerprint identification packaging structure is less than 300um, and the packaging structure completely conforms to the development trend.
Referring to fig. 5, the packaging method of the packaging structure of the ultra-thin fingerprint identification chip of the present invention is as follows:
step one, the wafer and the substrate frame are made of argon (Ar) and hydrogen (H) 2 ) As a cleaning gas, plasma cleaning was performed.
The wafer is provided with a plurality of ultrathin fingerprint identification chip units which complete the packaging process, the front surface of each chip unit is coated with a dielectric layer 35, the dielectric constant of the dielectric layer 35 is 4.5-6, and the back surface of each chip unit is provided with a solder ball 71. In order to remove the pollutants on the surfaces of the wafer and the substrate frame, improve the bonding force between the chip and the substrate frame and the plastic package material, ensure the pressing reliability of the fingerprint products on the sensor surface (fingerprint sensing identification area 12), the wafer and the substrate frame are required to be placed into a plasma cleaning machine for plasma cleaning, and argon (Ar) and hydrogen (H) 2 ) As a cleaning gas. The plasma cleaning is to bombard the surface of the lead frame by utilizing the plasma state formed by argon and hydrogen to remove surface pollutants, and simultaneously remove oxides by utilizing the reducibility of hydrogen ions to achieve the cleaning purpose. The cleaning method belongs to an environment-friendly cleaning method. The product is dried after plasma cleaning, and can be sent to the next process without drying.
Plasma cleaning key parameters:<1>cleaning gas: argon (Ar) and hydrogen (H) 2 ），<2>Cleaning power: 300 to 500 w of the size of the air conditioner,<3>cleaning time: 300-500 seconds. Generally, when the cleaning power is 480 watts, the cleaning time is preferably 360 seconds.
And step two, the composite protective film 91 is bonded with the loading film 92 and then bonded with the back surface of the substrate frame 8.
The composite protective film 91 has two layers including a semi-cured resin layer 912 and a base layer 911 as shown in fig. 5. The base layer 911 is made of polyimide, PEN, PET, etc. and has a thickness of 20-30 microns and excellent impact resistance and tear resistance. To enhance abrasion resistance, a thin layer of abrasion resistant polyurethane is provided on the inner side of the base layer 911 to form an abrasion resistant layer having a hardness of 2H or 3H, which can further prevent the film surface from being scratched. The semi-cured resin layer 41 is adhesive PSA, silicone adhesive (silicone adhesive) or the like, and has a thickness of 10 micrometers to 18 micrometers. The adhesive is softened under heating and pressurizing, has viscosity, reacts and solidifies after cooling, can obtain reliable binding force between the composite protective film 91 and the substrate frame 8 and between the composite protective film and the plastic packaging material, and improves the packaging yield of products. Therefore, the thickness of the composite protective film 91 is 45 to 60 μm, which has good flatness and adhesion.
The carrier film 92 has two layers, including a carrier film base layer 921 and a glue layer 922. The base layer 921 of the carrier film is made of PET, and the adhesive layer 922 of the carrier film 92 is attached to the base layer 911 of the composite protective film 91, as shown in fig. 5.
Because of the special requirements of the lamination process, a vacuum film pressing machine is required, the loading film 92 is fixed on the vacuum film pressing machine, the composite protective film 91 is laminated with the loading film 92, and the back surface of the substrate frame 8 is laminated with the semi-cured resin layer 41 of the composite protective film 91.
Key parameters of the vacuum film pressing machine: <1> evacuation time: 10 s-60 s, <2> vacuum lamination time: 10 s-60 s, <3> vacuum lamination pressure: 1kg/cm2 to 5kg/cm2. Generally, the evacuation time is selected to be 50s, the vacuum lamination time is selected to be 30s, and the pressure is selected to be 2kg/cm2.
The composite protective film 91, the loading film 92 and the substrate frame 8 are used for supporting the fingerprint identification chip and the molding of the plastic packaging process.
And thirdly, using a chip mounter to flip the chip to the front surface of the substrate frame.
The ultra-thin fingerprint identification chip unit after the packaging process in the first step is taken out from the wafer and flipped to the position to be pasted on the front surface of the substrate frame 8 of the composite protective film 91 after the second step by using a chip mounter, and the dielectric layer 35 of the ultra-thin fingerprint identification chip unit is directly pasted with the semi-cured resin layer 41 of the composite protective film 91.
Chip film parameters: <1> chip attach time (bond time): 200-800 ms, <2> chip attach force (bond force): 5-30 newtons, <3> chip positions (die displacement): +/-30 microns. When the die attach force is 20 newtons, the die attach time is only 400 milliseconds.
And fourthly, plastic packaging the ultrathin fingerprint identification chip unit by using a compression molding process (C-mold), and forming a plastic sealing layer by using the solder balls and the substrate frame.
Compression molding process parameters:<1>plasticSealing: the EMC is applied to the surface of the substrate,<2>plastic packaging temperature: 160-180 o C ，<3>Plastic package pressure: 6-16 tons of the catalyst,<4>curing time: 100 to 150 seconds of the time period,<5>product plastic package thickness: is larger than the design thickness of the product,<6>and (3) controlling the error of the thickness of the plastic package of the product: +/-15 microns. If the plastic package thickness of the product is 450 micrometers, the plastic package temperature is 175 o And C, plastic packaging pressure: 6 tons, curing time: 100 seconds.
And fifthly, post-curing (PMC) of the plastic packaged product.
After the plastic package forming is finished, the plastic package material needs to be further cured, so that the semi-cured resin layer 912 of the composite protective film 91 is bonded and connected with the dielectric layer 35 and the front surface of the plastic package layer formed in the fourth step, the reliability of the product is ensured, and the internal stress of the product is released.
Post-curing parameters of the product:<1>post cure temperature: 170-180 o C<2>Post-cure time: and 2-8 hours. Typically, the post cure temperature is 175 o C, post cure time required 5 hours.
And step six, polishing and thinning the plastic sealing layer of the plastic sealing product.
Polishing and thinning process parameters: <1> grinding wheel rotation speed: 800-3000 RPM <2> polishing thickness error control: +/-10 microns.
The process is to grind the plastic sealing layer of the product to make the whole thickness of the product reach the design requirement of the product to form a back plastic sealing layer 78, and grind the solder balls 71 to form the soldering surfaces of the solder balls, so as to facilitate the soldering of the PCB (printed circuit board), as shown in fig. 5. The polishing target thickness of the plastic sealing layer of the packaging structure of the ultrathin fingerprint identification chip is 270 micrometers, and the rotating speed of the grinding wheel can be selected: 2000RPM.
Step seven, separating the loading membrane 92.
After baking at 180 ℃ for 4 hours, the bonding between the loading film 92 and the composite protective film 91 is opened by a bonding release process, the packaged product is adsorbed on a vacuum platform, one corner of the loading film 92 is uncovered by using tweezers, and then the loading film 92 is removed at a constant speed along the corner manually. The carrier film 92 may also be peeled off using a fully automatic film peeling machine.
The composite protective film 91 is connected with the plastic package material and the dielectric layer 35 through chemical bonds, so that the reliability of the composite protective film is ensured, and the composite protective film cannot be torn off.
And step eight, polishing and thinning the composite protective film 91 of the plastic packaged product.
The thickness of the composite protective film 91 needs to be further thinned to 20 micrometers +/-2 micrometers, and its surface roughness Ra: on one hand, the ultra-thin packaging thickness is obtained by 0.2-0.5 micrometers, and the speed of sensitivity quick response of the fingerprint chip is achieved; on the other hand, the atomized particles in the base layer 911 material enable the haze to be 3-5%, the transmittance to be 95-98%, and the uniform diffuse reflection of light in the atomized particles can shield defects such as concave-convex points, die marks and the like existing in the packaging structure of the whole ultrathin fingerprint identification chip.
And step nine, coating a wear-resistant layer on the outer side of the thinned composite protective film 91.
To enhance abrasion resistance, the outside of the thinned composite protective film 91 is also coated with a thin layer of abrasion-resistant polyurethane to form an abrasion-resistant layer having a hardness of 2H or 3H, which can further prevent the composite protective film 91 from being scratched.
And step ten, laser cutting and forming.
The product is cut into individual packages of a desired shape by laser cutting along a cutting line, and as shown in fig. 3, 4A, 4B, the substrate frame 8 is cut off.
The packaging method of the packaging structure of the ultrathin fingerprint identification chip can obtain reliable binding force between the composite protective film 91 and the plastic sealing layer of the product, solve the problem of poor appearance of the product and improve the packaging yield of the product. As shown in fig. 6, the appearance of the package structure of the ultra-thin fingerprint recognition chip was observed on the surface thereof, without Dent (bump) and Die Mark (chip Mark).
The foregoing embodiments have been provided for the purpose of illustrating the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the foregoing embodiments are merely illustrative of the present invention and are not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The packaging method of the fingerprint identification chip comprises the following process flows:
step one: the wafer and the substrate frame are subjected to plasma cleaning by taking argon and hydrogen as cleaning gases, a plurality of fingerprint identification chip units which complete the packaging process are arranged on the wafer, a dielectric layer is arranged on the front surface of the wafer, and solder balls are arranged on the back surface of the wafer;
step two: the composite protective film is attached to the loading film and then attached to the back surface of the substrate frame after the cleaning in the step one;
step three: using a chip mounter to flip the fingerprint identification chip unit in the first step to the position of the chip to be mounted on the front surface of the substrate frame after the second step is completed;
step four: the fingerprint identification chip unit and the substrate frame in the plastic packaging step three are used for forming a plastic packaging product;
step five: performing post-curing process on the plastic package product in the fourth step;
step six: polishing and thinning the plastic sealing layer of the cured plastic sealing product obtained in the step five to expose the welding surface of the solder ball;
step seven: separating the loading film by adopting a de-bonding process;
step eight: polishing and thinning the composite protective film of which the loading film is peeled off;
step nine: coating a wear-resistant layer on the outer side of the thinned composite protective film;
and step ten, forming a single package body by laser cutting, and simultaneously removing the substrate frame.
2. The method for packaging a fingerprint identification chip according to claim 1, wherein: in the second step, the composite protective film comprises a base layer and a semi-cured resin layer, wherein the base layer is made of polyimide or polyethylene naphthalate, atomized particles are contained in the base layer, the haze is 3-5%, the transmittance is 95-98%, and the semi-cured resin layer is PSA or silicone adhesive.
3. The method for packaging a fingerprint identification chip according to claim 2, wherein: the thickness of the base layer is 20-30 micrometers.
4. A method of packaging a fingerprint recognition chip according to claim 2 or 3, characterized in that: the inner side of the base layer is provided with a layer of wear-resistant polyurethane to form a wear-resistant layer, and the hardness of the wear-resistant layer is 2H or 3H.
5. The method for packaging a fingerprint identification chip according to claim 2, wherein: the thickness of the semi-cured resin layer is 10 micrometers to 18 micrometers.
6. The method for packaging a fingerprint identification chip according to claim 1, wherein: in the fourth step, the plastic package thickness of the plastic package formed product is larger than the design thickness of the product, and the error of the plastic package thickness is controlled: +/-15 microns.
7. The method for packaging a fingerprint identification chip according to claim 1, wherein: in the eighth step, the thickness of the composite protective film is thinned to 20 micrometers +/-2 micrometers, and the surface roughness Ra of the composite protective film is as follows: 0.2-0.5 microns.
8. The method for packaging a fingerprint identification chip according to claim 1, wherein: in step seven, the plastic packaged product in step six needs to be baked at 180 ℃ for 4 hours before the loading film is separated.
9. The method for packaging a fingerprint identification chip according to claim 1, wherein: in the tenth step, the single package body comprises a fingerprint identification sensor chip and an encapsulation body, wherein the front surface of the fingerprint identification sensor chip is provided with a fingerprint induction identification area and a plurality of chip electrodes, the chip electrodes are arranged on one side of the fingerprint induction identification area, the encapsulation body encapsulates the fingerprint identification sensor chip and a metal connecting piece, the upper surface of the encapsulation body exposes out of the front surface of the fingerprint identification sensor chip, the front surface of the fingerprint identification sensor chip and the upper surface of the encapsulation body are covered with a patterned insulating layer, an insulating layer opening is formed at the chip electrodes, the upper surface of the insulating layer is selectively provided with a front rewiring metal layer, the front rewiring metal layer is distributed on one side of the chip electrodes outside the vertical area of the front surface of the fingerprint induction identification area and is connected with the chip electrodes through the insulating layer opening, the front surface of the fingerprint identification sensor chip is coated with a dielectric layer, the dielectric layer covers the front surface rewiring metal layer and the insulating layer, the metal connecting piece is arranged on one side of the fingerprint identification sensor chip and is arranged nearby, the upper surface of the encapsulation body covers the patterned insulating layer, the front surface of the metal layer and the metal layer corresponds to the metal layer, the bottom of the metal layer is arranged on the bottom of the encapsulation body, the bottom of the metal layer is connected with the metal layer, the bottom of the metal layer is arranged on the bottom of the metal layer, the metal layer is connected with the metal layer through the top surface of the metal layer, the metal layer is welded with the top surface of the metal layer, the metal layer is directly exposed out of the top surface of the metal layer, and the metal layer is welded with the bottom one layer, the front surface of the composite protective film is flush with the upper surface of the dielectric layer, the composite protective film further comprises a composite protective film arranged on the dielectric layer, the composite protective film comprises a semi-cured resin layer and a base layer, the semi-cured resin layer is connected with the dielectric layer and the front surface of the back plastic sealing layer in a bonding way, the base layer contains atomized particles, the haze is 3-5%, the transmittance is 95-98%, and the composite protective film is thinned to 20 micrometers +/-2 micrometers.
10. The method for packaging a fingerprint recognition chip according to claim 9, wherein: and the outer side and/or the inner side of the base layer is/are provided with a layer of wear-resistant polyurethane to form a wear-resistant layer, and the hardness of the wear-resistant layer is 2H or 3H.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810841274.1A CN108734154B (en) | 2018-07-27 | 2018-07-27 | Packaging method and packaging structure of ultrathin fingerprint identification chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810841274.1A CN108734154B (en) | 2018-07-27 | 2018-07-27 | Packaging method and packaging structure of ultrathin fingerprint identification chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108734154A CN108734154A (en) | 2018-11-02 |
| CN108734154B true CN108734154B (en) | 2023-08-15 |
Family
ID=63941891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810841274.1A Active CN108734154B (en) | 2018-07-27 | 2018-07-27 | Packaging method and packaging structure of ultrathin fingerprint identification chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108734154B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110046567B (en) * | 2019-04-11 | 2021-10-01 | Oppo广东移动通信有限公司 | Display screen assembly and electronic equipment |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130113A (en) * | 1998-07-13 | 2000-10-10 | Lsi Logic Corporation | Enhanced lamination process between heatspreader to pressure sensitive adhesive (PSA) interface as a step in the semiconductor assembly process |
| WO2007023639A1 (en) * | 2005-08-25 | 2007-03-01 | Tokyo Electron Limited | Substrate treating apparatus, and for the substrate treating apparatus, method of substrate delivery, program and program storing recording medium |
| JP2008244351A (en) * | 2007-03-28 | 2008-10-09 | Furukawa Electric Co Ltd:The | Chip protective film |
| CN103869329A (en) * | 2012-12-13 | 2014-06-18 | 北京天中磊智能科技有限公司 | Integrated satellite navigation chip and manufacture method thereof |
| CN104615982A (en) * | 2015-01-28 | 2015-05-13 | 江阴长电先进封装有限公司 | Encapsulation structure of fingerprint identification sensor and encapsulation method thereof |
| CN104979447A (en) * | 2015-07-16 | 2015-10-14 | 华天科技（昆山）电子有限公司 | Flip LED packaging structure and manufacturing method |
| CN105225965A (en) * | 2015-11-03 | 2016-01-06 | 中芯长电半导体（江阴）有限公司 | A kind of fan-out package structure and preparation method thereof |
| CN105244307A (en) * | 2015-09-01 | 2016-01-13 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method of fan-out type packaging structure |
| CN105405777A (en) * | 2015-12-24 | 2016-03-16 | 上海源模微电子有限公司 | Large-area parallel stacking type packaging structure and packaging method |
| CN107331627A (en) * | 2017-07-03 | 2017-11-07 | 京东方科技集团股份有限公司 | A kind of chip packaging method and chip-packaging structure |
| CN107481992A (en) * | 2017-09-06 | 2017-12-15 | 中芯长电半导体（江阴）有限公司 | The encapsulating structure and method for packing of fingerprint recognition chip |
| CN107481945A (en) * | 2017-08-16 | 2017-12-15 | 华进半导体封装先导技术研发中心有限公司 | A kind of wafer scale fan-out-type stacked package process |
| CN107481980A (en) * | 2017-09-22 | 2017-12-15 | 浙江卓晶科技有限公司 | A kind of thin type fingerprint chip packaging method and encapsulating structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9644118B2 (en) * | 2015-03-03 | 2017-05-09 | Dow Global Technologies Llc | Method of releasably attaching a semiconductor substrate to a carrier |
-
2018
- 2018-07-27 CN CN201810841274.1A patent/CN108734154B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130113A (en) * | 1998-07-13 | 2000-10-10 | Lsi Logic Corporation | Enhanced lamination process between heatspreader to pressure sensitive adhesive (PSA) interface as a step in the semiconductor assembly process |
| WO2007023639A1 (en) * | 2005-08-25 | 2007-03-01 | Tokyo Electron Limited | Substrate treating apparatus, and for the substrate treating apparatus, method of substrate delivery, program and program storing recording medium |
| JP2008244351A (en) * | 2007-03-28 | 2008-10-09 | Furukawa Electric Co Ltd:The | Chip protective film |
| CN103869329A (en) * | 2012-12-13 | 2014-06-18 | 北京天中磊智能科技有限公司 | Integrated satellite navigation chip and manufacture method thereof |
| CN104615982A (en) * | 2015-01-28 | 2015-05-13 | 江阴长电先进封装有限公司 | Encapsulation structure of fingerprint identification sensor and encapsulation method thereof |
| CN104979447A (en) * | 2015-07-16 | 2015-10-14 | 华天科技（昆山）电子有限公司 | Flip LED packaging structure and manufacturing method |
| CN105244307A (en) * | 2015-09-01 | 2016-01-13 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method of fan-out type packaging structure |
| CN105225965A (en) * | 2015-11-03 | 2016-01-06 | 中芯长电半导体（江阴）有限公司 | A kind of fan-out package structure and preparation method thereof |
| CN105405777A (en) * | 2015-12-24 | 2016-03-16 | 上海源模微电子有限公司 | Large-area parallel stacking type packaging structure and packaging method |
| CN107331627A (en) * | 2017-07-03 | 2017-11-07 | 京东方科技集团股份有限公司 | A kind of chip packaging method and chip-packaging structure |
| CN107481945A (en) * | 2017-08-16 | 2017-12-15 | 华进半导体封装先导技术研发中心有限公司 | A kind of wafer scale fan-out-type stacked package process |
| CN107481992A (en) * | 2017-09-06 | 2017-12-15 | 中芯长电半导体（江阴）有限公司 | The encapsulating structure and method for packing of fingerprint recognition chip |
| CN107481980A (en) * | 2017-09-22 | 2017-12-15 | 浙江卓晶科技有限公司 | A kind of thin type fingerprint chip packaging method and encapsulating structure |
Non-Patent Citations (1)
| Title |
|---|
| 基于黏性键合的非制冷红外焦平面阵列制备技术研究;方中;《中国博士学位论文全文数据库 工程科技Ⅱ辑》;C032-31 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108734154A (en) | 2018-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI841586B (en) | Chip packaging method | |
| TWI839321B (en) | Fingerprint sensor device | |
| US6518097B1 (en) | Method for fabricating wafer-level flip chip package using pre-coated anisotropic conductive adhesive | |
| US7727875B2 (en) | Grooving bumped wafer pre-underfill system | |
| TWI352412B (en) | Multi-chip package structure and method of fabrica | |
| KR100510556B1 (en) | Semiconductor package having ultra thin thickness and method for manufacturing the same | |
| US8334602B2 (en) | Die package including encapsulated die and method of manufacturing the same | |
| US8093104B1 (en) | Multi-chip stacking method to reduce voids between stacked chips | |
| EP1906445A2 (en) | Manufacturing method of semiconductor device | |
| CN108074904B (en) | Electronic package and manufacturing method thereof | |
| CN110148588B (en) | Fan-out type antenna packaging structure and packaging method thereof | |
| JPH08306738A (en) | Semiconductor device and its production | |
| JP2004119727A (en) | Method of manufacturing circuit device | |
| CN108734154B (en) | Packaging method and packaging structure of ultrathin fingerprint identification chip | |
| CN108734156B (en) | Packaging method and packaging structure of ultrathin fingerprint identification chip | |
| CN108734155B (en) | Packaging method and packaging structure of ultrathin fingerprint identification chip | |
| US7964493B2 (en) | Method of manufacturing semiconductor device | |
| JP2004119729A (en) | Method of manufacturing circuit device | |
| TWI771712B (en) | Package substrate and method for manufacturing the same | |
| US20080265393A1 (en) | Stack package with releasing layer and method for forming the same | |
| JP4334047B2 (en) | Semiconductor device and manufacturing method thereof | |
| TW201142996A (en) | Packaging device of image sensor | |
| CN102270584A (en) | Circuit board structure, packaging structure and method for manufacturing circuit board | |
| KR20150057516A (en) | Method of manufacturing Semiconductor package | |
| CN208547960U (en) | A kind of encapsulating structure of ultra-thin fingerprint recognition chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |