CN108717215A - A kind of reflective DOE diffractive optical elements and preparation method thereof - Google Patents
A kind of reflective DOE diffractive optical elements and preparation method thereof Download PDFInfo
- Publication number
- CN108717215A CN108717215A CN201810477579.9A CN201810477579A CN108717215A CN 108717215 A CN108717215 A CN 108717215A CN 201810477579 A CN201810477579 A CN 201810477579A CN 108717215 A CN108717215 A CN 108717215A
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- CN
- China
- Prior art keywords
- layer
- preparation
- optical elements
- diffractive optical
- polysilicon layer
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
Abstract
The present invention relates to the processing methods of the diffractive micro-optical device of microelectronic technique; specially a kind of reflective DOE diffractive optical elements and preparation method thereof; including monocrystalline silicon substrate (1), polysilicon layer (2) and photo mask board (3); the polysilicon layer (2) is located on monocrystalline silicon substrate (1); the photo mask board (3) is located on polysilicon layer (2); further include aluminium layer (4) and protective film (5); the aluminium layer (4) is located on polysilicon layer (2), and the protective film (5) is located on aluminium layer (4).
Description
Technical field
The present invention relates to the processing method of the diffractive micro-optical device of microelectronic technique, specially a kind of reflective DOE spreads out
Emitter part and preparation method thereof.
Background technology
Micro-processing technology based on silicon microelectronics achieves huge achievement in past over half a century, energetically
The development for having pushed integrated circuit.Silicon is in nature first of constituent content, and people are to silicon and its derivative
Characteristic has enough understandings.The huge industry ability for having benefited from silicon substrate processing technology needs retrofit technique to support micro-
Optics of receiving also has obtained huge development.Micronano optical element have it is small, it is light-weight and the characteristics of be easily integrated.With
The development of photoelectron technology, micronano optical element have wide answer in biomedicine, the fields such as fiber optic communication and information processing
With.
Micronano optical element is made by the modern micro-nano technology technology of micron/submicron grade, including electricity
Beamlet direct writing technology, laser writing technology, mask set lithography, technique of gray-scale mask and heat melt technology etc..With modernization
Information apparatus requires optics fine structure, the micromation of device and integrated higher and higher, therefore using mutually treating as
Ripe microelectronic processing technology processing micronano optical structure becomes an important research direction.
Invention content
The object of the present invention is to provide a kind of preparation method of reflective DOE diffractive optical elements, the reflective DOE diffraction
Device can utilize the diffraction of transmitting light, illumination to be mapped on the device of micro-structure, will present on reflected light projects to other objects
Diffraction pattern.
Technical solution is used by invention solves its technical problem：A kind of reflective DOE diffractive optical elements, including monocrystalline silicon
Substrate, polysilicon layer and photo mask board, the polysilicon layer are located on monocrystalline silicon substrate, and the photo mask board is located at polycrystalline
Further include aluminium layer and protective film on silicon layer, the aluminium layer is set on the polysilicon layer, and the protective film is located on aluminium layer.
Technical solution is used by invention solves its technical problem：A kind of preparation method of reflective DOE diffractive optical elements,
Include the following steps：Step 1：It prepares the mask plate with optical microstructures and is used for photoetching；
Step 2：The polysilicon that growth thickness is a on monocrystalline silicon substrate is for etching；
Step 3：Photoetching and development are carried out to polysilicon layer using mask plate；
Step 4：Depth b is etched to polysilicon layer；
Step 5：Aluminium layer is plated on figure as reflecting layer；
Step 6：Transparent protective film is grown on figure.
Preferably, the growth thickness a of the polysilicon is 1 μm.
Preferably, the depth b is 250nm ± 40nm.
Preferably, the thickness of the aluminium layer is 50nm ± 20nm.
Advantageous effect of the invention is：The preparation method microelectronic processing technology of the reflective DOE diffractive optical elements of the present invention
Preparing reflective DOE devices can effective control pattern precision and reduction cost；It can accurately be controlled using polysilicon as etch layer
Etching depth processed is to reach the best diffraction efficiency of device.
Description of the drawings
Fig. 1 is the structural schematic diagram of the reflective DOE diffractive optical elements of the present invention.
Description of the drawings：1, monocrystalline silicon substrate, 2, polysilicon layer, 3, photo mask board, 4, aluminium layer, 5, protective film.
Specific implementation mode
Invention is described in further detail presently in connection with attached drawing.These attached drawings are simplified schematic diagram, only to show
Meaning mode illustrates the basic structure of invention, therefore it only shows and invents related composition.
A kind of reflective DOE diffractive optical elements, including monocrystalline silicon substrate 1, polysilicon layer 2 and photo mask board 3, the polycrystalline
Silicon layer 2 is located on monocrystalline silicon substrate 1, and the photo mask board 3 is located on polysilicon layer 2, further includes aluminium layer 4 and protective film 5,
The aluminium layer 4 is located on polysilicon layer 2, and the protective film 5 is located on aluminium layer 4.
A kind of preparation method of reflective DOE diffractive optical elements, includes the following steps：Step 1：Preparing has the micro- knot of optics
The mask plate of structure is used for photoetching；
Step 2：The polysilicon that growth thickness is a on monocrystalline silicon substrate is for etching；
Step 3：Photoetching and development are carried out to polysilicon layer using mask plate；
Step 4：Depth b is etched to polysilicon layer；
Step 5：Aluminium layer is plated on figure as reflecting layer；
Step 6：Transparent protective film is grown on figure.
The growth thickness a of the polysilicon is 1 μm.
The depth b is 250nm ± 40nm.
The thickness of the aluminium layer is 50nm ± 20nm.
The preparation method of the reflective DOE diffractive optical elements of the present invention prepares reflective DOE devices with microelectronic processing technology
It can effective control pattern precision and reduction cost；Etching depth can be accurately controlled to reach using polysilicon as etch layer
The best diffraction efficiency of device.
It is enlightenment with the above-mentioned desirable embodiment according to invention, through the above description, relevant staff is complete
Can without departing from the scope of the technological thought of the present invention', carry out various changes and amendments, this invention it is technical
Range is not limited to the contents of the specification, it is necessary to determine its technical scope according to right.
Claims (5)
1. a kind of reflective DOE diffractive optical elements, it is characterised in that：It is covered including monocrystalline silicon substrate (1), polysilicon layer (2) and photoetching
Template (3), the polysilicon layer (2) are located on monocrystalline silicon substrate (1), and the photo mask board (3) is located at polysilicon layer (2)
On, further include aluminium layer (4) and protective film (5), the aluminium layer (4) is located on polysilicon layer (2), and the protective film (5) is located at aluminium
On layer (4).
2. a kind of preparation method of reflective DOE diffractive optical elements, it is characterised in that：Include the following steps：Step 1：Preparation has
The mask plate of optical microstructures is used for photoetching；
Step 2：The polysilicon that growth thickness is a on monocrystalline silicon substrate is for etching；
Step 3：Photoetching and development are carried out to polysilicon layer using mask plate；
Step 4：Depth b is etched to polysilicon layer；
Step 5：Aluminium layer is plated on figure as reflecting layer；
Step 6：Transparent protective film is grown on figure.
3. the preparation method of reflective DOE diffractive optical elements according to claim 1, it is characterised in that：The polysilicon
Growth thickness a is 1 μm.
4. the preparation method of reflective DOE diffractive optical elements according to claim 1, it is characterised in that：The depth b is
250nm±40nm。
5. the preparation method of reflective DOE diffractive optical elements according to claim 1, it is characterised in that：The thickness of the aluminium layer
Degree is 50nm ± 20nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810477579.9A CN108717215A (en) | 2018-05-18 | 2018-05-18 | A kind of reflective DOE diffractive optical elements and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810477579.9A CN108717215A (en) | 2018-05-18 | 2018-05-18 | A kind of reflective DOE diffractive optical elements and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108717215A true CN108717215A (en) | 2018-10-30 |
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ID=63899920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810477579.9A Pending CN108717215A (en) | 2018-05-18 | 2018-05-18 | A kind of reflective DOE diffractive optical elements and preparation method thereof |
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| CN (1) | CN108717215A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109975904A (en) * | 2019-03-22 | 2019-07-05 | 无锡中微掩模电子有限公司 | A kind of reflective DOE diffractive optical element of high-precision and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5377044A (en) * | 1990-03-19 | 1994-12-27 | Canon Kabushiki Kaisha | Reflecting diffraction grating and device, such as encoder or the like, using the same |
| CN1344945A (en) * | 2000-09-21 | 2002-04-17 | 日本板硝子株式会社 | Reflection-type diffraction grating |
| CN100542805C (en) * | 2007-06-19 | 2009-09-23 | 浙江大学 | The micro electronmechanical processing grating light valve array and the method thereof that are used for laser photo-typesetting |
| CN107942425A (en) * | 2016-10-13 | 2018-04-20 | 上海矽越光电科技有限公司 | Buried-metal type broadband reflection grating and preparation method thereof |
-
2018
- 2018-05-18 CN CN201810477579.9A patent/CN108717215A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5377044A (en) * | 1990-03-19 | 1994-12-27 | Canon Kabushiki Kaisha | Reflecting diffraction grating and device, such as encoder or the like, using the same |
| CN1344945A (en) * | 2000-09-21 | 2002-04-17 | 日本板硝子株式会社 | Reflection-type diffraction grating |
| CN100542805C (en) * | 2007-06-19 | 2009-09-23 | 浙江大学 | The micro electronmechanical processing grating light valve array and the method thereof that are used for laser photo-typesetting |
| CN107942425A (en) * | 2016-10-13 | 2018-04-20 | 上海矽越光电科技有限公司 | Buried-metal type broadband reflection grating and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109975904A (en) * | 2019-03-22 | 2019-07-05 | 无锡中微掩模电子有限公司 | A kind of reflective DOE diffractive optical element of high-precision and preparation method thereof |
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20181030 |