CN108701966B - 量子级联激光器 - Google Patents

量子级联激光器 Download PDF

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Publication number
CN108701966B
CN108701966B CN201780014565.7A CN201780014565A CN108701966B CN 108701966 B CN108701966 B CN 108701966B CN 201780014565 A CN201780014565 A CN 201780014565A CN 108701966 B CN108701966 B CN 108701966B
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region
hole blocking
laser
gain region
thickness
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Chinese (zh)
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CN108701966A (zh
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罗兰·泰西耶
阿列克谢·巴拉诺夫
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Centre National de la Recherche Scientifique CNRS
Universite de Montpellier
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Centre National de la Recherche Scientifique CNRS
Universite de Montpellier
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN201780014565.7A 2016-03-03 2017-03-02 量子级联激光器 Active CN108701966B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1651796 2016-03-03
FR1651796A FR3048561B1 (fr) 2016-03-03 2016-03-03 Laser a cascade quantique.
PCT/EP2017/054857 WO2017149057A1 (fr) 2016-03-03 2017-03-02 Laser à cascade quantique

Publications (2)

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CN108701966A CN108701966A (zh) 2018-10-23
CN108701966B true CN108701966B (zh) 2020-12-11

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CN201780014565.7A Active CN108701966B (zh) 2016-03-03 2017-03-02 量子级联激光器

Country Status (9)

Country Link
US (1) US10811846B2 (https=)
EP (1) EP3424114B1 (https=)
JP (1) JP6937770B2 (https=)
KR (1) KR102268802B1 (https=)
CN (1) CN108701966B (https=)
CA (1) CA3015717A1 (https=)
FR (1) FR3048561B1 (https=)
IL (1) IL261495A (https=)
WO (1) WO2017149057A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5799026A (en) * 1996-11-01 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency
CN103682000A (zh) * 2012-09-14 2014-03-26 台积固态照明股份有限公司 具有改进的效率和下降率的iii-v族化合物器件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5588015A (en) * 1995-08-22 1996-12-24 University Of Houston Light emitting devices based on interband transitions in type-II quantum well heterostructures
JP2004119814A (ja) * 2002-09-27 2004-04-15 Matsushita Electric Ind Co Ltd ユニポーラ多重量子井戸デバイスとその製造方法
US8571082B2 (en) * 2004-08-19 2013-10-29 Maxion Technologies, Inc. Quantum cascade lasers with electrically tunable emission wavelengths
CN100461558C (zh) * 2006-06-07 2009-02-11 中国科学院半导体研究所 一维光子晶体调制的量子级联激光器管芯结构及制造方法
US8125706B2 (en) * 2008-10-20 2012-02-28 The United States Of America As Represented By The Secretary Of The Navy High-temperature interband cascade lasers
JP5740865B2 (ja) * 2010-08-09 2015-07-01 住友電気工業株式会社 半導体発光素子
US8290011B2 (en) * 2010-11-22 2012-10-16 The United States Of America, As Represented By The Secretary Of The Navy Interband cascade lasers
EP2702648B1 (en) * 2011-04-20 2018-05-09 The Government of the United States of America as represented by the Secretary of the Navy Interband cascade lasers with engineered carrier densities
DE102011103143B4 (de) * 2011-05-25 2014-05-22 Julius-Maximilians-Universität Würzburg Interbandkaskadenlaser-Verstärkermedium
DE102011117278B4 (de) * 2011-10-31 2014-07-10 Julius-Maximilians-Universität Würzburg Interbandkaskadenlaser-Verstärkermedium
US8848754B2 (en) * 2012-08-22 2014-09-30 Wisconsin Alumni Research Foundation Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers
JP6244668B2 (ja) * 2013-05-31 2017-12-13 住友電気工業株式会社 量子カスケードレーザ
JP6163080B2 (ja) * 2013-10-28 2017-07-12 浜松ホトニクス株式会社 量子カスケードレーザ
JP6379696B2 (ja) * 2014-06-05 2018-08-29 住友電気工業株式会社 量子カスケード半導体レーザ
US10033160B2 (en) * 2015-10-28 2018-07-24 The Board Of Regents Of The University Of Oklahoma Interband cascade light emitting devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5799026A (en) * 1996-11-01 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency
CN103682000A (zh) * 2012-09-14 2014-03-26 台积固态照明股份有限公司 具有改进的效率和下降率的iii-v族化合物器件

Also Published As

Publication number Publication date
IL261495A (en) 2018-10-31
WO2017149057A1 (fr) 2017-09-08
KR20180118149A (ko) 2018-10-30
US20190115728A1 (en) 2019-04-18
KR102268802B1 (ko) 2021-06-24
EP3424114B1 (fr) 2022-04-06
CN108701966A (zh) 2018-10-23
FR3048561A1 (fr) 2017-09-08
US10811846B2 (en) 2020-10-20
JP2019507506A (ja) 2019-03-14
JP6937770B2 (ja) 2021-09-22
FR3048561B1 (fr) 2019-03-15
EP3424114A1 (fr) 2019-01-09
CA3015717A1 (fr) 2017-09-08

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