CN108691009B - Method for producing silicon single crystal - Google Patents
Method for producing silicon single crystal Download PDFInfo
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- CN108691009B CN108691009B CN201810238746.4A CN201810238746A CN108691009B CN 108691009 B CN108691009 B CN 108691009B CN 201810238746 A CN201810238746 A CN 201810238746A CN 108691009 B CN108691009 B CN 108691009B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 71
- 239000010703 silicon Substances 0.000 title claims abstract description 71
- 239000013078 crystal Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 60
- 239000011261 inert gas Substances 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 44
- 239000007789 gas Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
Abstract
The present invention provides a method for producing silicon single crystal, comprising growing silicon single crystal by Czochralski pulling, wherein at least the following conditions (a) and (b) are satisfied: (a) the rotation speed of a crucible for storing the silicon melt is less than 5rpm, and the difference between the rotation speeds of the monocrystalline silicon and the crucible is more than 10 rpm; and (b) disposing an inverted conical heat shield around the silicon single crystal, wherein a flow rate of the inert gas passing through a top portion of the heat shield is 5to 10 times slower than a flow rate of the inert gas passing through a region between a bottom portion of the heat shield and a liquid surface of the silicon melt.
Description
Technical Field
The present invention relates to a method for growing a single crystal, and more particularly, to a method for manufacturing a single crystal silicon.
Background
In recent years, the semiconductor industry has been vigorously developed, and among them, silicon wafers are the most basic necessities of the semiconductor industry. The growth method of single crystal silicon includes a floating zone method (CZ), a Czochralski method (CZ), and the like. Among these methods, Czochralski crystal pulling has become the major growth method for large-sized wafers due to its economic advantages.
During the czochralski method, a seed crystal is immersed in a crucible holding a silicon melt in a chamber maintained under an inert gas atmosphere at a reduced pressure, and the immersed seed crystal is gradually pulled out, thereby growing single crystal silicon under the seed crystal. In the czochralski method, a cylindrical or an inverted conical heat shield is provided around the silicon single crystal to isolate radiant heat in order to control the temperature gradient in the growth of the silicon single crystal.
Recently, the Czochralski method for growing high-resistance silicon crystals has a problem, such as the growth of single crystal silicon having a resistance exceeding 1000ohm cm. That is, impurities in the silicon melt may affect the quality of the grown silicon single crystal.
Disclosure of Invention
Accordingly, the present invention relates to a method of manufacturing single crystal silicon to reduce impurities in the finally formed single crystal silicon.
The present invention provides a method for producing silicon single crystal, comprising growing silicon single crystal by Czochralski pulling, wherein at least the following conditions (a) and (b) are satisfied: (a) the rotation speed of a crucible for storing the silicon melt is less than 5rpm, and the difference between the rotation speeds of the monocrystalline silicon and the crucible is more than 10 rpm; and (b) disposing an inverted conical heat shield around the silicon single crystal, wherein a flow rate of the inert gas passing through a top portion of the heat shield is 5to 10 times slower than a flow rate of the inert gas passing through a region between a bottom portion of the heat shield and a liquid surface of the silicon melt.
In an embodiment of the invention, the rotation speed of the crucible is greater than 0.002rpm and less than 5 rpm.
In an embodiment of the present invention, the difference between the rotation speeds of the single crystal silicon and the crucible is 16rpm or more.
In an embodiment of the invention, the difference between the rotation speeds of the monocrystalline silicon and the crucible is 16rpm to 30 rpm.
In an embodiment of the present invention, the rotation directions of the single crystal silicon and the crucible are the same.
In an embodiment of the present invention, the rotation directions of the single crystal silicon and the crucible are opposite.
In an embodiment of the invention, the inert gas includes argon.
In an embodiment of the present invention, the czochralski crystal pulling method may further include providing nitrogen gas.
In an embodiment of the present invention, the czochralski crystal pulling method is a czochralski crystal pulling method with an external horizontal magnetic field of 1500-4000 gauss.
In an embodiment of the invention, the silicon melt is disposed within 80% of the maximum intensity of the horizontal magnetic field.
In an embodiment of the invention, the silicon melt is disposed at 90% to 100% of the highest intensity of the horizontal magnetic field.
In an embodiment of the present invention, the height between the bottom of the heat shield and the liquid surface of the silicon melt is designed such that the flow rate of the inert gas passing through the cross-sectional area between the bottom of the heat shield and the liquid surface of the silicon melt is 5to 10 times faster than the flow rate of the inert gas passing through the cross-sectional area at the top of the heat shield.
In an embodiment of the present invention, a ratio of a cross-sectional area of the inert gas flowing toward the surface of the silicon melt to a cross-sectional area of the inert gas flowing out of the surface of the silicon melt is 0.25 to 1.
In an embodiment of the present invention, a first heater may be disposed around the crucible, and a ratio of a length of the first heater to a height of the crucible is 1 to 2.
In an embodiment of the present invention, a second heater may be disposed below the crucible, and a ratio of a width of the second heater to an inner diameter of the crucible is 0.3 to 0.9.
Based on the above, large-sized single-crystal silicon having a high resistance of more than 1000 ohm-cm can be realized by the single-crystal silicon manufacturing method of the present invention. Further, the single crystal silicon may have a diameter of more than 125mm and a crystal orientation of (100) or (111). Since impurities can be effectively localized on the side wall proximate to the crucible according to the present invention, precipitation of impurities in the silicon melt can be reduced, and impurities generated in the single-crystal silicon can be reduced.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 is a schematic view of an apparatus for use in a Czochralski crystal pulling process in accordance with an embodiment of the present invention;
FIG. 2 is a schematic view of a heat shield and a silicon melt level in an embodiment in accordance with the invention;
FIG. 3 is a graph showing the magnetic field strength corresponding to the silicon melt;
FIG. 4 is a schematic view of the crucible and the first heater in the embodiment according to the present invention.
The reference numbers illustrate:
100: crucible pot
102: silicon melt soup
102 a: liquid level
104: support piece
106: first heater
108: magnetic field supplier
110: pull rod
112: silicon single crystal
114: heat shield
114 a: top part
114 b: bottom part
116: inner wall
118: outer wall
120: second heater
A1: first cross sectional area
A2: second cross sectional area
A3: third cross sectional area
A4: fourth cross sectional area
H1, H2: height
L: length of
r: inner diameter
R: radius of
S: fixed position
W: width of
X: highest point
Detailed Description
The present invention is described more fully hereinafter with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, elements may not be illustrated to scale.
FIG. 1 is a schematic view of an apparatus for use in a Czochralski crystal pulling process in accordance with one embodiment of the present invention.
Referring to FIG. 1, therein is shownAn apparatus for use in a Czochralski crystal pulling process, however, the invention is not limited thereto. In other embodiments, the methods of the present invention may be applied to other suitable devices. The apparatus of fig. 1 basically includes a crucible 100 for holding a silicon melt 102, a support 104 for supporting the crucible 100, a first heater 106 disposed around the crucible 100 for heating the silicon melt 102, a magnetic field supply 108 surrounding the crucible 100, a pull rod 110 positioned above the silicon melt 102 for pulling upward and forming a single crystal silicon 112, and a heat shield 114 positioned above the silicon melt 102 and surrounding the single crystal silicon 112 for insulating heat from the first heater 106, wherein the heat shield 114 is inverted conical and has an inner wall 116 facing the single crystal silicon 112 and an outer wall 118 facing away from the single crystal silicon 112 and facing the crucible 100. In addition, a second heater 120 may be disposed below the crucible 100to heat the silicon melt 102 from the bottom, and the crucible 100 and the second heater 120 are coaxial. In the Czochralski method, the pull rate of the pull rod 110 is known to be controlled by the axial temperature gradient of the silicon crystal 112 being pulled and by the ambient temperature gradient of the liquid-solid interface of the silicon melt 102. Furthermore, during the czochralski crystal pulling process, inert gas is supplied to the apparatus of fig. 1 at a designed pressure/flow rate, and optionally, nitrogen (N) is supplied2) Further supplied to the device.
In order to grow high resistance single crystal silicon with a low impurity (e.g., oxygen or metal) content, the conditions of the czochralski method according to embodiments of the present invention are as follows.
In one embodiment, the difference in rotational speed between single crystal silicon 112 and crucible 100 is greater than 10rpm, preferably greater than 16rpm, and more preferably greater than 16rpm
The rotational speed is non-directional. In other words, the directions of rotation of single crystal silicon 112 and crucible 100 may be the same or opposite. In one embodiment, the rotation speed of the crucible 100 is less than 5rpm, preferably greater than 0.002rpm and less than 5 rpm. The Czochralski method is applied with magnetic field, and has the advantages of suppressed convection of silicon melt 102 and temperature distribution of silicon melt 102 surfaceAnd is more asymmetric. Therefore, in the prior art, in order to make the temperature distribution of liquid surface 102a of silicon melt 102 (with or without an applied magnetic field) more symmetrical, the rotation speed of crucible 100 is maintained at least at 6rpm during the growth of single crystal silicon 112. However, rotation of crucible 100 may increase the precipitation of impurities into silicon melt 102. Therefore, in the present embodiment, the rotation speed of crucible 100 is made very low and the rotation speed of single-crystal silicon 112 is made relatively high during crystal pulling, whereby impurities are discharged from the solid-liquid interface where single-crystal silicon 112 is in contact with silicon melt level 102a in a direction away from single-crystal silicon 112 during crystal growth, and thereby the amount of impurities in single-crystal silicon 112 can be effectively reduced. In one embodiment, the crucible 100 has a high purity.
In one embodiment, the flow rate of the inert gas through the top of heat shield 114 is 5to 10 times greater than the flow rate through the region between the bottom of heat shield 114 and liquid surface 102a of silicon melt 102.
Further, the conditions of the czochralski crystal pulling method in the present example are further required as follows.
In one embodiment, the inert gas flow rate is slower at the top of heat shield 114 and faster between the bottom of heat shield 114 and liquid surface 102a of silicon melt 102. Therefore, in the initial crystal growth, the flow rate of the inert gas near the liquid surface 102a of the silicon melt 102 is 5to 10 times the flow rate of the inert gas passing through the top of the heat shield 114, whereby the impurity doping into the single-crystal silicon 112 can be suppressed. For example, in a growth furnace, the inert gas flow rate through the bottom of the heat shield 114 and the liquid surface 102a is about 20l/min to 300l/min, and the inert gas flow rate averages 2m/sec to 30m/sec at the height H1 throughout the crystal growth process. In another embodiment, the height H1 is designed to provide a sufficient area of cross-sectional area between the bottom of the heat shield 114 and the liquid surface 102a to allow a flow rate of inert gas through the area that is 5to 10 times faster than the flow rate of inert gas through the cross-sectional area of the top of the heat shield 114. In another embodiment, the radius R of the top of the heat shield 114 is designed, for example, such that the flow rate of the inert gas through the cross-sectional area of the top of the heat shield 114 is greater than the through heightThe inert gas flow rate in the region of H1 was 5to 10 times slower. The inert gas includes, for example, argon (Ar: (Ar) (Ar))g)). The higher the purity of the inert gas, the less impurities are incorporated into the silicon crystals. The purity of the inert gas is, for example, 99.999999%.
In view of achieving the above flow rate difference, referring to fig. 2, the top 114a of the heat shield 114 has a first cross-sectional area a1, the bottom 114b of the heat shield 114 and the liquid surface 102a of the silicon melt 102 have a second cross-sectional area a2, and the ratio of the first cross-sectional area a1 to the second cross-sectional area a2 is, for example, 5to 10 times. Thus, the flow rate of the inert gas through the top portion 114a is 5to 10 times the flow rate through the region between the bottom portion 114b and the liquid surface 102 a. In one embodiment, the cross-sectional area of the region between the bottom 114b of the heat shield 114 and the liquid surface 102a is controlled to be 0.006-0.09 m2。
In addition, in order to ensure that impurities such as oxygen, metals, etc. in the silicon melt 102 can be more efficiently carried out by the gas, please refer to fig. 1 again. The inert gas flows between the inner wall 116 of the heat shield 114 and the single crystal silicon 112 toward the liquid surface 102a of the silicon melt 102, where the cross-sectional area (i.e., at the height H1) is defined as a third cross-sectional area A3. The inert gas then flows out of the surface 102a of the silicon melt 102 between the outer wall 118 of the heat shield 114 and the crucible 100, where the cross-sectional area is defined as a fourth cross-sectional area A4. If the ratio of the third cross-sectional area A3 to the fourth cross-sectional area A4 is 0.25-1, the velocity of the gas passing through A3 and A4 can be controlled, thereby ensuring that the impurities in the silicon melt 102 are more efficiently carried out by the gas and maintaining the purity required by high resistance.
In one embodiment, the Czochralski pulling process is a Czochralski pulling process with an applied horizontal magnetic field of 1500-4000 gauss, such as by applying an additional horizontal magnetic field to silicon melt 102. The pressure of the growth furnace may be 15to 450 torr.
In one embodiment, silicon melt 102 is disposed at a maximum intensity of the horizontal magnetic field of more than 80%, preferably at a maximum intensity of 90% to 100%. In detail, referring to fig. 3, the right side of the crucible 100 holding the silicon melt 102 and the magnetic field supplier 108 are shown, and other elements are omitted herein for clarity; the left side of fig. 3 shows a graph of magnetic field strength, which corresponds to the ratio of the magnetic field strengths. For example, the maximum magnetic field strength (ratio 100%) is in contact with the top of the graph of the magnetic field strength, with the range of 90% of the maximum magnetic field strength being within the region shown by the dashed line.
In addition, the gas applied in the czochralski crystal pulling method may be a single gas or a mixed gas of two or more gases. The gas applied in the czochralski method includes, for example, an inert gas. The composition ratio of two or more gases in the mixed gas may vary according to manufacturing requirements. Furthermore, in the growth furnace, the pressure and supplied gas flow rate during the czochralski crystal pulling process may vary from crystal growth stage to crystal growth stage.
In another embodiment, since heat transfer in the czochralski crystal pulling process is primarily by thermal radiation, thermal energy may be dissipated by downward transfer from the crucible 100. Therefore, referring to FIG. 1, the second heater 120 disposed below the crucible 100 can provide heat energy from bottom to top to the crucible 100to satisfy the heat energy required for crystal growth, so as to change the temperature distribution of the silicon melt 102 in the crucible 100. Specifically, the ratio of the width W of the second heater 120 to the inner diameter r of the crucible 100 is set to 0.3 to 0.9, so that the temperature of the crucible 100 wall can be further controlled to control the impurity deposition rate, thereby achieving the requirement of growing a high resistivity ingot.
In addition, as mentioned above, since the heat transfer in the crystal growth system is mainly by heat radiation, please refer to fig. 4 for the purpose of increasing the heating efficiency. Since the length L of the first heater 106 determines the heating range and the height H2 of the crucible 100 determines the heating area, the ratio of the length L of the first heater 106 to the height H2 of the crucible 100 can be controlled to 1-2 by the thermal field design, thereby optimizing the heating efficiency. The initial position of the highest point X of the crucible 100 is coplanar with the fixed position S of the first heater 106, and the fixed position S is located at 1/6-1/3 of the length L of the first heater 106, for example, to maintain the required temperature for crystal growth. Since the heating efficiency affects the rate of depositing impurities in the crucible 100, in the present embodiment, the ratio of the length L to the height H2 is controlled to efficiently reduce the rate of depositing impurities in the crucible 100 while maintaining the crystal growth requirement (melt) temperature.
The present invention is described more specifically below by way of experimental examples, however, it should be understood that the experimental examples of the present invention are not limited to the following and can be practiced with appropriate changes.
Experimental example one
The apparatus for the Czochralski crystal pulling method of Experimental example one is shown in FIG. 1, in which an inert gas is supplied to the apparatus of FIG. 1 at a pressure of 14 to 100torr and a flow rate of 2 to 30m/sec, and the ratio of A3 to A4 is as shown in Table one below. A crystal growth experiment was performed to analyze the influence of the above cross-sectional area ratio on the growth of single-crystal silicon, and the results are shown in table 1 below.
TABLE 1
From table 1 above, it can be seen that by controlling the ratio of the cross-sectional area between the inert gas flow direction and the effluent liquid surface, the velocity of the inert gas passing through A3 and a4 can be controlled to reduce the oxygen impurity content to maintain the purity required by the high resistance of the single crystal silicon.
Experimental example II
Experimental example two an apparatus for the czochralski crystal pulling method is shown in fig. 4, in which a crystal growth experiment was performed by fixing the heating temperature of the first heater 106 and varying the ratio of the length L of the first heater 106 to the height H2 of the crucible 100, so as to analyze the effect of the ratio of the length L of the first heater 106 to the height of the crucible 100 on the content of oxygen impurities in the silicon single crystal, and the results are shown in table 2 below.
TABLE 2
| Ratio of length L to height H2 | Oxygen impurity contentQuantity (ppma) |
| 1.5 | 2～10 |
| 1.42 | 2～10 |
| 1.40 | 2～10 |
As can be seen from Table 2 above, by controlling the ratio of the length L of first heater 106 to the height H2 of crucible 100, the rate at which oxygen impurities are evolved from crucible 100 can be reduced, thereby reducing the oxygen impurity content of the single crystal silicon.
Experimental example III
Experimental example three the apparatus for the czochralski crystal pulling method is shown in fig. 1, in which the heating temperature of the second heater 120 is fixed, the ratio of the width W of the second heater 120 to the inner diameter r of the crucible 100 is shown in table 3 below, and then a crystal growth experiment was performed to analyze the influence of the ratio of the width W of the second heater 120 to the inner diameter r of the crucible 100 on the content of oxygen impurities in the single crystal silicon 112, the results of which are shown in table 3 below.
TABLE 3
| Ratio of width W to inner diameter r | Oxygen impurity content (ppma) |
| 0.88 | 2～10 |
As can be seen from Table 3 above, by controlling the ratio of the width W of the second heater 120 to the inner diameter r of the crucible 100, the temperature of the crucible 100 wall can be further controlled, and the impurity precipitation rate can be controlled, thereby reducing the oxygen impurity content in the single-crystal silicon.
In conclusion, according to the present invention, it is possible to realize a large-sized single-crystal silicon having a high resistance of more than 1000 ohm-cm, and the single-crystal silicon has a diameter of more than 125mm and a crystal orientation of (100) or (111). Specifically, because impurities are effectively controlled near the side wall of the crucible, incorporation of dissolved inclusions in the silicon melt into the single crystal silicon is reduced. For example, the interstitial oxygen concentration (interstitial oxygen concentration) in the resulting single crystal silicon may be less than 8 ppm. Furthermore, the dopant impurities, such As boron (B), phosphorus (P), arsenic (As), carbon (C), etc., may comprise different species and concentrations depending on desired specifications or manufacturing requirements.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (13)
1. A method for manufacturing single crystal silicon, comprising:
growing the single crystal silicon by a czochralski method, wherein the czochralski method satisfies at least the following conditions (a) to (e);
(a) the rotation speed of a crucible for storing the silicon melt is less than 5rpm, and the difference between the rotation speeds of the monocrystalline silicon and the crucible is more than 10 rpm;
(b) disposing an inverted conical heat shield around the single-crystal silicon, and a flow rate of the inert gas through a top of the heat shield is 5to 10 times slower than a flow rate of the inert gas through a region between a bottom of the heat shield and a liquid surface of the silicon melt;
(c) the ratio of the sectional area of the inert gas flowing to the liquid surface of the silicon melt to the sectional area of the inert gas flowing out of the liquid surface of the silicon melt is 0.25-1;
(d) the firewood type crystal pulling method also comprises the steps that a first heater is arranged around the crucible, and the ratio of the length of the first heater to the height of the crucible is 1-2; and
(e) the firewood type crystal pulling method further comprises the step of arranging a second heater below the crucible, wherein the ratio of the width of the second heater to the inner diameter of the crucible is 0.3-0.9.
2. The method for manufacturing single-crystal silicon according to claim 1, wherein a rotation speed of the crucible is more than 0.002rpm and less than 5 rpm.
3. The method of manufacturing single-crystal silicon according to claim 1, wherein a difference in rotation speed between the single-crystal silicon and the crucible is 16rpm or more.
4. The method for manufacturing single-crystal silicon according to claim 1, wherein a difference in rotation speed between the single-crystal silicon and the crucible is 16 to 30 rpm.
5. The method of manufacturing single-crystal silicon according to claim 1, wherein the single-crystal silicon and the crucible rotate in the same direction.
6. The method of manufacturing single-crystal silicon according to claim 1, wherein the single-crystal silicon and the crucible are rotated in opposite directions.
7. The method of manufacturing single-crystal silicon according to claim 1, wherein the inert gas includes argon gas.
8. The method of manufacturing single crystal silicon of claim 1, wherein the czochralski crystal pulling further comprises providing nitrogen gas.
9. The method for producing silicon single crystal as claimed in claim 1, wherein the czochralski method is a czochralski method in which a horizontal magnetic field of 1500-4000 gauss is applied.
10. The method of manufacturing single crystal silicon according to claim 9, wherein the silicon melt is provided at 80% or more of the maximum intensity of the horizontal magnetic field.
11. The method of manufacturing single-crystal silicon according to claim 9, wherein the silicon melt is set to 90% to 100% of the maximum intensity of the horizontal magnetic field.
12. The manufacturing method of single-crystal silicon according to claim 1, wherein a height between a bottom of the heat shield and a liquid surface of the silicon melt is designed so that a flow rate of the inert gas passing through a sectional area between the bottom of the heat shield and the liquid surface of the silicon melt is 5to 10 times faster than a flow rate of the inert gas passing through a sectional area at a top of the heat shield.
13. A method for manufacturing single crystal silicon, comprising:
growing the single crystal silicon by a czochralski method, wherein the czochralski method satisfies at least the following conditions (a) and (b);
(a) the rotation speed of a crucible for storing the silicon melt is less than 5rpm, and the difference between the rotation speeds of the monocrystalline silicon and the crucible is more than 10 rpm; and
(b) an inverted conical heat shield is arranged around the silicon single crystal, and the flow rate of the inert gas passing through the top of the heat shield is 5to 10 times slower than the flow rate of the inert gas passing through the region between the bottom of the heat shield and the liquid surface of the silicon melt, and the height between the bottom of the heat shield and the liquid surface of the silicon melt is designed so that the flow rate of the inert gas passing through the cross-sectional area between the bottom of the heat shield and the liquid surface of the silicon melt is 5to 10 times faster than the flow rate of the inert gas passing through the cross-sectional area at the top of the heat shield.
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| US201762479340P | 2017-03-31 | 2017-03-31 | |
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| TW107105459A TWI761454B (en) | 2017-03-31 | 2018-02-14 | Method of manufacturing silicon single crystal |
| TW107105459 | 2018-02-14 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105239158A (en) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | Temperature field control technology of silicon melt liquid in growth of single crystal silicon of czochralski method |
| CN105483817A (en) * | 2015-12-09 | 2016-04-13 | 上海超硅半导体有限公司 | Monocrystalline silicon growth ultrasonic wave oxygen control method |
| CN105506731A (en) * | 2015-12-09 | 2016-04-20 | 上海超硅半导体有限公司 | Monocrystalline silicon growth oxygen content control technology |
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| CN105239158A (en) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | Temperature field control technology of silicon melt liquid in growth of single crystal silicon of czochralski method |
| CN105483817A (en) * | 2015-12-09 | 2016-04-13 | 上海超硅半导体有限公司 | Monocrystalline silicon growth ultrasonic wave oxygen control method |
| CN105506731A (en) * | 2015-12-09 | 2016-04-20 | 上海超硅半导体有限公司 | Monocrystalline silicon growth oxygen content control technology |
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