KR101252915B1

KR101252915B1 - Method for Manufacturing Single Crystal Ingot

Info

Publication number: KR101252915B1
Application number: KR1020100086856A
Authority: KR
Inventors: 황정하; 김상희; 심복철
Original assignee: 주식회사 엘지실트론
Priority date: 2010-09-06
Filing date: 2010-09-06
Publication date: 2013-04-09
Also published as: KR20120024141A

Abstract

The embodiment relates to a method for producing a single crystal ingot.
In the method of manufacturing a single crystal ingot according to the embodiment, in the method of manufacturing a silicon single crystal including a high volatility dopant, the RRG (Resistivity Radial Gradient) (%) may be controlled by decreasing the oxygen concentration before the solidification rate 50%.

Description

Method for Manufacturing Single Crystal Ingot

The embodiment relates to a method for producing a single crystal ingot.

In general, a process for manufacturing a wafer for manufacturing a semiconductor device includes a cutting process for slicing silicon ingots, an edge grinding process for rounding the edges of the sliced wafer, and a rough surface of the wafer due to the cutting process. Lapping process to flatten, edge grinding or cleaning process to remove various contaminants including particles attached to wafer surface during lapping process, surface grinding process to secure the shape and surface suitable for post process and edge polishing process to wafer edge It includes.

Meanwhile, according to the related art, a material having high electron mobility, for example, a low melting point dopant, is introduced as a dopant during single crystal growth in order to improve electron mobility. In general, materials with high electron mobility are generally highly volatile, and as a result, the volatilization rate is accelerated as the concentration of the dopant in the melt decreases, especially as the amount of melt reduced by the length of growth into a single crystal due to the characteristics of single crystal growth. This reduces the absolute amount of oxygen that enters the growing single crystal because it readily bonds with oxygen and leaves the melt in oxide form.

On the other hand, in recent years, as the degree of integration of semiconductor devices has been steadily increasing, the quality level of wafers required by semiconductor device manufacturers has been improved. Resistivity characteristics of the main quality characteristics of the wafer are determined by the concentration of impurities introduced into the single crystal through the solid-liquid interface during single crystal growth using the CZ method. It is important to maintain uniformity in the radial direction of the wafer. This is because if the variation of the resistivity characteristic in the radial direction of the single crystal is present, the electrical characteristics (for example, leakage current) of the semiconductor element formed on the wafer are changed, and the yield of the device is lowered.

Radial Resistivity Gradient (RGR) is used to evaluate the resistivity of wafers. The RRG is calculated using the resistivity values measured at the center of the wafer and at the four edges.

In the prior art, in order to improve the RRG (%), a method of increasing the rotation of the quartz crucible or controlling the convection pattern using a magnetic field has been used. However, when dopants such as As, P, and Sb having a low melting point are used, they rapidly react with oxygen generated in the melt and volatilized to the surface of the melt, causing a difference in the resistivity of the center portion and the outer resistivity of the outer portion.

In the prior art, the rotation of the quartz crucible was increased to reduce the difference in specific resistance between the center and the outer portion of the single crystal, but in an adverse effect, the cristobalite production was promoted, which did not benefit the yield.

In addition, the use of a magnetic field can improve the RRG (%) without deteriorating the quartz crucible but affects other qualities such as oxygen concentration and crystal defects.

In addition, another method should be taken when the introduction of an additional device, for example, the introduction of a magnetic field control device, is not practically considered due to the consideration of the sensory triangle ratio produced as of now.

The embodiment is to provide a single crystal ingot manufacturing method that can effectively reduce the specific resistance difference between the single crystal center and the outer portion during the single crystal growth, especially when using a low melting dopant (dopant) without changing the specific resistance.

In addition, the embodiment particularly provides a single crystal ingot manufacturing method that can lower the RRG (%) of less than 50% of the solidification (Solidification) criteria that is grown first of the single crystal length.

In the method of manufacturing a single crystal ingot according to the embodiment, in the method of manufacturing a silicon single crystal including a high volatility dopant, the RRG (Resistivity Radial Gradient) (%) may be controlled by decreasing the oxygen concentration before the solidification rate 50%.

According to the single crystal ingot manufacturing method according to the embodiment, in the case of using a dopant of low melting point, in particular, during the single crystal growth, the specific resistance difference between the center and the outside of the single crystal is effectively reduced without changing the specific resistance according to solidification during the single crystal growth. You can.

For example, the embodiment may reduce the RRG (%) by decreasing the oxygen concentration or decreasing the oxygen concentration without employing a method such as magnetic field, melt convection, or hot zone design.

For example, in the embodiment, the RRG (%) is reduced to about 6.6% when the difference in oxygen concentration between the center and the outer portion of the single crystal is within about 0.4%, and the RRG (%) is about 24 when the oxygen concentration difference is about 4%. RRG (%) can be lowered by about a quarter compared to%.

In addition, the embodiment can improve the RRG (%) by about 40% or more through reducing the oxygen concentration, particularly in controlling the RRG (%) within 50% of the solidification rate that is first grown among the single crystal lengths. .

In addition, the embodiment after the solidification rate (Solidification) of 50% to improve the RRG (%) to improve the RRG (%) of about 70% when the pressure is increased by about 40% compared to the existing.

In addition, the embodiment can propose a more effective method for improving RRG (%) by presenting a constant ratio of pressure and Ar flow rate. For example, when the ratio (Ratio) of pressure and Ar flow rate is applied at 10% or more, the RRG (%) is at least 20% lowered.

1 and 2 is a diagram illustrating a single crystal growth before and after the solidification rate 50% in the single crystal ingot manufacturing method according to the embodiment.
Figure 3 is an exemplary flow rate change according to the increase in the moving path of the inert gas at the solidification rate 50% before (P) and after (Q) in the method for producing a single crystal ingot according to the embodiment.
Figure 4 is a matrix plot (Matrix Plot) for the relationship between the RRG (%) and oxygen concentration in the single crystal ingot manufacturing method according to the embodiment.
5 is a diagram illustrating an oxygen concentration difference in the method for producing a single crystal ingot according to Example (A) and Comparative Example (B).
Figure 6 is an illustration of the RRG (%) difference in the method for producing a single crystal ingot according to Example (A) and Comparative Example (B).
7 is an illustration of specific resistance in the method for producing a single crystal ingot according to Example (A) and Comparative Example (B).
8 is a matrix plot showing that the oxygen concentration gradient with the outer portion becomes smoother as the oxygen concentration level of the actual center of the single crystal decreases in the method of manufacturing a single crystal ingot according to the embodiment.
9 is a matrix plot showing that the RRG (%) is lowered as the oxygen concentration level of the outer portion of the actual single crystal in the method of manufacturing a single crystal ingot according to the embodiment.
FIG. 10 is a matrix plot showing a lower RRG (%) as the oxygen concentration level of the actual single crystal is lower in the method of manufacturing a single crystal ingot according to an embodiment.
FIG. 11 is a matrix plot showing that the RRG (%) is lower as the difference between the oxygen concentration in the center and the outer portion of the actual single crystal in the method of manufacturing a single crystal ingot according to the embodiment.
12 is a view illustrating a pressure ratio according to a solidification rate in a method of manufacturing a single crystal ingot according to an embodiment.
13 is a diagram illustrating a ratio of pressure and Ar flow rate according to the solidification rate in the single crystal ingot manufacturing method according to Example (A) and Comparative Example (B).

In the description of the embodiments, each wafer, apparatus, chuck, member, sub-region, or surface is referred to as being "on" or "under" Quot ;, " on "and" under "include both being formed" directly "or" indirectly " In addition, the criteria for "up" or "down" of each component are described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

(Example)

1 and 2 are diagrams illustrating single crystal growth at a solidification rate of 50% before (P) and after (Q) in the method of manufacturing a single crystal ingot according to the embodiment.

First, the single crystal growth apparatus 100 to which the single crystal manufacturing method according to the embodiment is applied will be described.

The silicon single crystal growth apparatus 100 according to the embodiment may include a chamber 110, a crucible 120, a heater 130, a pulling means 150, and the like.

For example, the single crystal growth apparatus 100 according to the embodiment is provided in the chamber 110, the inside of the chamber 110, the crucible 120 containing the silicon melt, and the inside of the chamber 110. It is provided in, and may include a pulling means 150 coupled to the heater 130 and the seed crystal 152 to heat the crucible 120.

The chamber 110 provides a space in which predetermined processes are performed to grow a single crystal ingot for a silicon wafer used as an electronic component material such as a semiconductor.

The radiant heat insulator 140 may be installed on the inner wall of the chamber 110 to prevent heat of the heater 130 from being discharged to the side wall of the chamber 110.

The embodiment may adjust various factors such as pressure conditions inside the rotation of the quartz crucible 120 to control the oxygen concentration during silicon single crystal growth. For example, in order to control the oxygen concentration, an argon gas or the like may be injected into the chamber 110 of the silicon single crystal growth apparatus and discharged downward.

The crucible 120 is provided inside the chamber 110 to contain a silicon melt, and may be made of quartz. A crucible support (not shown) made of graphite may be provided outside the crucible 120 to support the crucible 120. The crucible support is fixedly installed on a rotating shaft (not shown), which can be rotated by a driving means (not shown) to allow the solid-liquid interface to maintain the same height while rotating and elevating the crucible 120. have.

The heater 130 may be provided inside the chamber 110 to heat the crucible 120. For example, the heater 130 may be formed in a cylindrical shape surrounding the crucible support. The heater 130 melts a high-purity polycrystalline silicon mass loaded in the crucible 120 into a silicon melt.

The embodiment employs the Czochralsk (CZ) method of growing a crystal while immersing a seed crystal 152, which is a single crystal, in a silicon melt and slowly pulling it up as a manufacturing method for silicon single crystal ingot growth. Can be.

According to this method, first, after a necking process of growing thin and long crystals from the seed crystals 152, a shouldering process of growing the crystals in the radial direction to a target diameter is performed. After the body growing process to grow into a crystal having a certain diameter, after the body growing by a certain length, the diameter of the crystal is gradually reduced, and the tailing process to separate from the molten silicon and eventually single crystal (single crystal) The growth is over.

The single crystal ingot manufacturing method according to the embodiment may be a low-melting high-volatile dopant, for example, antimony (Sb), red (Red Phosphorus), germanium (Ge), arsenic (As) and the like, below a certain level The lower the resistivity, the lower the oxygen concentration.

The reason is that as the single crystal grows with the segregation coefficient of these dopants of 1.0 or less, the melt decreases by the length, thereby increasing the concentration of the low melting dopant in the melt.

The higher the dopant concentration in the melt, the greater the amount of volatilization at the melt surface, which the embodiment intends to apply to the RRG (%) improvement.

That is, the low melting dopant already in the melt can more easily volatilize with oxygen as a medium.

3 is a view illustrating a flow rate change according to an increase in a moving path of an inert gas at a solidification rate 50% before (P) and after (Q) in the method of manufacturing a single crystal ingot according to the embodiment.

In case of 50% of solidification rate (P), since the flow velocity flows through the outer part of the single crystal rapidly, a pressure drop occurs to facilitate the volatilization of the low melting dopant in the melt, and furthermore, the volatilization on the surface because of the rapid flow rate on the surface Will be promoted.

In addition, this promotion is more rapidly reacted with more oxygen concentration, in particular, the greater the amount of oxygen flowing into the outer portion of the single crystal, the greater the volatility. However, in general, inert gas is inevitably required to grow single crystals, and therefore, such an influence is inevitably minimized.

Meanwhile, as shown in FIG. 3, in the case of the single crystal and the empty space in which the single crystal and the melt and the inert gas flow, the low melting point dopant selects the empty space in which the thermal energy can be easily converted into kinetic energy rather than inside the single crystal. The concentration acts as a catalyst.

Therefore, if the oxygen concentration is high in the part where such a state is changed, volatilization is generated more strongly, and eventually, a difference in specific resistance between the single crystal center and the outer portion is generated. In general, since the concentration of oxygen is higher in the state where the melt is large, and the flow of inert gas is faster than in the case where the melt length is smaller than that of the melt due to the characteristics of the structures for growing the single crystal, in particular, Oxygen concentrations within 50% of the length of the single crystal are inevitably high, which causes low-melting dopants to volatilize readily from the melt surface.

The embodiment proposes a method for reducing the variation of the center and the outer portion of the resistivity by decreasing the slope of the oxygen concentration and decreasing the level in the single crystal growth using the low melting dopant.

Accordingly, the method of manufacturing a single crystal ingot according to the embodiment may control the RRG (Resistivity Radial Gradient) (%) by reducing the oxygen concentration before the solidification rate of 50% in the method of manufacturing a silicon single crystal including a high volatility dopant. have.

In the exemplary embodiment, the low-melting high-volatile dopant may be, for example, antimony (Sb), red (Red Phosphorus), germanium (Ge), arsenic (As) and the like, but is not limited thereto.

In an embodiment, the specific resistance of the silicon single crystal may be less than 0.003Ωcm according to the injection of the low melting point high volatile dopant, but is not limited thereto.

FIG. 4 is a matrix plot of the relationship between RRG (%) and oxygen concentration in the method of manufacturing a single crystal ingot according to the embodiment. According to FIG. 4, the lower the oxygen concentration, the lower the RRG (%). It can be seen.

5 is an exemplary diagram of oxygen concentration difference in the single crystal ingot manufacturing method according to Example (A) and Comparative Example (B), it can be seen that the higher the central value of the oxygen concentration, the higher the RRG (%).

Figure 6 is an exemplary diagram showing the difference in RRG (%) in the method of manufacturing a single crystal ingot according to Example (A) and Comparative Example (B), in particular RRG according to the embodiment before the solidification rate 50% of the single crystal length is less than 50% (%) The effect of improvement is great.

The embodiment can improve the RRG (%) by more than about 40% by reducing the oxygen concentration, especially in controlling the RRG (%) within 50% of the solidification rate (Solidification), which is first grown among the single crystal lengths. According to the embodiment, the oxygen concentration may be reduced by increasing the volatilization of the high volatility dopant by lowering the pressure before the solidification rate of 50%.

FIG. 7 is an exemplary view showing specific resistance in the method for manufacturing single crystal ingot according to Example (A) and Comparative Example (B), and the embodiment is effective in improving the specific resistance of the outer portion.

FIG. 8 is a matrix plot showing that the oxygen concentration gradient with the outer portion becomes smoother as the oxygen concentration level of the actual single crystal in the single crystal ingot manufacturing method according to the embodiment decreases.

FIG. 9 is a matrix plot showing a lower RRG (%) as the oxygen concentration level of the outer portion of the single crystal actually decreases in the method of manufacturing a single crystal ingot according to an embodiment.

FIG. 10 is a matrix plot showing a lower RRG (%) as the oxygen concentration level of the actual single crystal is lower in the method of manufacturing a single crystal ingot according to an embodiment.

FIG. 11 is a matrix plot in which the RRG (%) is lowered as the difference in oxygen concentration between the center and the outer portion of the actual single crystal is smaller in the method of manufacturing the single crystal ingot according to the embodiment.

12 is a view illustrating a pressure ratio according to a solidification rate in the method of manufacturing a single crystal ingot according to the embodiment.

For example, when the pressure is increased after 50%, the RRG (%) is lowered by 70% or more when the pressure is increased by about 40% or more compared to 50% before the solidification rate.

When the pressure increases, the RRG (%) is lowered due to the effect of weakening an inert gas, for example, Ar flow, thereby lowering the volatilization rate.

13 is a diagram illustrating a ratio of the pressure and the Ar flow rate according to the solidification rate in the single crystal ingot manufacturing method according to Example (A) and Comparative Example (B).

For example, in the production of single crystals, the RRG (%) can be controlled by controlling the ratio (Ratio) of the pressure and the inert gas flow rate within the range of 1.2 to 0.8 at a solidification rate of 30% or more.

According to the embodiment, a more effective method of improving RRG (%) can be proposed by presenting a constant ratio of pressure and Ar flow rate. For example, when the ratio of pressure and Ar flow rate is 10% or more, for example, the effect of lowering the RRG (%) by at least 20% by controlling within the range of 1.2 to 0.8 at 30% or more of solidification rate There is.

In addition, in the embodiment, after the solidification rate is 50%, the RRG (%) is improved by about 70% when the pressure is increased by about 40%.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims

In the method for producing a silicon single crystal including a high volatility dopant, the oxygen concentration is reduced before the solidification rate of the silicon single crystal 50%, and after the silicon single crystal solidification rate 50%, the pressure is 40% compared to the 50% before the solidification rate The method of claim 1, further comprising controlling the RRG (Resistivity Radial Gradient) (%) by controlling the difference in oxygen concentration between the center and the outer portion of the single crystal within 0.4%.

The method according to claim 1,
The single crystal ingot production method of controlling the RRG (%) by controlling the ratio (Ratio) of the pressure and the inert gas flow rate in the range of 1.2 to 0.8 at a solidification rate of 30% or more during the production of the single crystal.

In the method of manufacturing a silicon single crystal containing a high volatility dopant, the RRG (%) is controlled by controlling the oxygen concentration difference between the center and the outer portion of the silicon single crystal within 0.4% by decreasing the oxygen concentration before 50% of the solidification rate of the silicon single crystal. Single crystal ingot manufacturing method to control within 6.6%.

The method of claim 3,
The single crystal ingot production method of controlling the RRG (%) by controlling the ratio (Ratio) of the pressure and the inert gas flow rate in the range of 1.2 to 0.8 at a solidification rate of 30% or more during the production of the single crystal.