CN108682614B - Thin film transistor with zinc tin aluminum potassium oxide as channel layer and preparation method thereof - Google Patents

Thin film transistor with zinc tin aluminum potassium oxide as channel layer and preparation method thereof Download PDF

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CN108682614B
CN108682614B CN201810379608.8A CN201810379608A CN108682614B CN 108682614 B CN108682614 B CN 108682614B CN 201810379608 A CN201810379608 A CN 201810379608A CN 108682614 B CN108682614 B CN 108682614B
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岳兰
孟繁新
任达森
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Guizhou Minzu University
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Abstract

The invention relates to the technical field of thin film transistors, in particular to a thin film transistor taking zinc-tin-aluminum-potassium oxide as a channel layer and a preparation method thereof. The invention takes zinc tin aluminum potassium oxide material as a channel layer, takes organic poly tetra ethyl phenol (PVP) material as an insulating layer, takes aluminum as a source electrode, a drain electrode and a gate electrode, and prepares the TFT with a top gate coplanar structure on a common glass substrate. In the invention, the channel layer and the dielectric layer are both prepared by adopting a dipping and pulling process of a sol-gel method, and the source electrode, the drain electrode and the gate electrode are prepared by adopting a vacuum thermal evaporation method. Finally obtaining a material with higher saturation mobility of 62.3cm2Vs, lower subthreshold swing 0.09V/decade, threshold voltage close to zero 0.23V, lower off-state current: (<10‑9A) Low leakage current: (<10‑10A) On-off ratio of greater than 106And a zinc tin aluminum potassium oxide thin film transistor operating in enhancement mode. The invention provides a feasible scheme for preparing the oxide thin film transistor with high performance and low energy consumption at low cost.

Description

Thin film transistor with zinc tin aluminum potassium oxide as channel layer and preparation method thereof
Technical Field
The invention relates to the technical field of thin film transistors, in particular to a thin film transistor taking zinc-tin-aluminum-potassium oxide as a channel layer and a preparation method thereof.
Background
A Thin Film Transistor (TFT) is used as a core component in an Active Matrix organic light-Emitting Diode (AMOLED) technology, and includes several important components, such as a substrate, a channel layer, an insulating layer, a gate electrode, a source electrode, and a drain electrode. At present, an oxide TFT based on a Transparent Amorphous Oxide Semiconductor (TAOS) thin film as a channel layer becomes a new-generation TFT technology having the most potential to be applied to AMOLED by virtue of its characteristics of high mobility, good visible light transparency, excellent uniformity, and the like.
Among oxide TFTs, the research of channel layer TFTs based on indium gallium zinc oxide (In-Ga-Zn-O, IGZO) materials has made some substantial progress, but considering the consumption and daily increase of In and Ga, the price continues to increase, and the development of new TAOS channel layer materials not containing In and Ga is a major research direction In the field.
The zinc-tin oxide (Zn-Sn-O, ZTO) has the advantages of good environmental stability, high visible light transmittance, easy formation of a flat amorphous film, rich composition elements and the like, and has the potential of being used for preparing a high-mobility oxide channel layer material without In and Ga. However, ZTO has defects such as oxygen vacancies and metal ion gaps, which are too high in carrier concentration as a TFT channel layer, resulting in a TFT that often operates in a depletion mode and exhibits a high off-state current, resulting in large power consumption.
Although the present area of research currently introduces some elements of low electronegativity (e.g., La, Al, Hf, W, Si, B, Li, S, Ba, etc.) into ZTO materials to reduce their electron carrier concentration by suppressing the formation of oxygen vacancies in the ZTO materials, ultimately reducing the off-state current of the ZTO TFT. However, studies have shown that the electron mobility of the ZTO material is also reduced with the increase in the content of the above-mentioned doping element, resulting in a sharp decrease in the saturation mobility of the TFT; in addition, because the ions of the low electronegative elements are often in a high valence state (+3 valence to +6 valence), the concentration of carriers of the ZTO material is difficult to realize precise regulation and control by changing the content of high-valence-state doped elements, so that the on-state current of the device is greatly reduced while the off-state current of the TFT is reduced by doping the high-valence-state doped elements, and the TFT presents a lower on-off ratio.
Therefore, whether the carrier concentration of the ZTO film can be accurately regulated or not becomes a key for developing a ZTO TFT device which has low off-state current, high saturation mobility, high on-off ratio and works in an enhancement mode.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides a thin film transistor which has low cost, good electrical performance and low energy consumption and takes zinc-tin-aluminum-potassium oxide as a channel layer, and a preparation method thereof.
A method for preparing a thin film transistor with zinc tin aluminum potassium oxide as a channel layer comprises the following steps:
(1) zn (C)2H3O2)2·5H2O、SnCl2·2H2O、AlCl3·6H2O and KCl 3H2Dissolving O in ethylene glycol, taking ethanolamine as a stabilizer, and stirring for 24-48 hours at 50-80 ℃ to form a transparent precursor solution;
(2) standing and aging the obtained precursor solution, dipping and pulling a coating film on a glass substrate, putting the wet film after pulling into an oven, pretreating at the temperature of 200-250 ℃ for 20-60 minutes, and then annealing at the temperature of 350-500 ℃ for 1-5 hours to obtain a zinc-tin-aluminum-potassium oxide channel layer;
(3) combining a mask, and preparing a source electrode and a drain electrode on the zinc-tin-aluminum-potassium oxide channel layer obtained in the step (2) by using a vacuum thermal evaporation method;
(4) preparing a PVP insulating layer on a zinc tin aluminum potassium oxide channel layer comprising a source electrode and a drain electrode by using an organic solution dissolved with poly tetra ethylene phenol by adopting a dip-coating process;
(5) and combining the mask, and preparing a gate electrode on the PVP insulating layer by using a vacuum thermal evaporation method to obtain the thin film transistor taking the zinc-tin-aluminum-potassium oxide as a channel layer.
The volume ratio of the ethanolamine to the ethylene glycol is (0.1:100-1: 100).
In the step (1), the concentration of the precursor solution is 0.2-0.6M, and Zn (C)2H3O2)2·5H2O、SnCl22H2O、AlCl3·6H2O、KCl·3H2The molar ratio of zinc ions, tin ions, aluminum ions and potassium ions in O is 1:2:0.07: 0.1.
In the step (2), the glass substrate is dipped with the pulling coating film, and the pulling speed is 0.1-0.5 mm/s. The zinc tin aluminum potassium oxide film with flat surface (the average roughness and the square root roughness of the film are both lower than 1nm) and uniform thickness is prepared by dip-coating the film at a coating speed of 0.1-0.5mm/s, which is beneficial to the formation of a good interface between a channel layer and an insulating layer and the improvement of the saturation mobility of a device.
In the step (2), the times of dipping and pulling the precursor solution on the glass substrate, baking in the oven and annealing are all 2-4 times. By controlling the times of dipping and pulling, baking in an oven and annealing, a compact zinc-tin-aluminum-potassium oxide film is formed, and the influence of the defect state in the semiconductor channel layer on the saturation mobility degradation of the device caused by the capture or scattering of electron carriers is reduced.
In the step (3), a vacuum thermal evaporation method is adopted, and the specific operation steps are as follows: and preparing a source electrode and a drain electrode by taking aluminum oxide as a mask, controlling the thermal evaporation current to be 65A and the thermal evaporation voltage to be 60-80V, and finally obtaining the source electrode and the drain electrode of the thin film transistor which are both metal aluminum electrodes. To obtain source and drain electrodes in ohmic contact with the zinc tin aluminum potassium oxide channel layer.
In the step (4), the concentration of the poly tetraethyl ene phenol solution is 75mg/mL, and the organic solvent is absolute ethyl alcohol or acetone; in the dipping and pulling process, the pulling speed is controlled to be 1.0mm/s, the dipping and pulling are carried out for 2 times, and the obtained product is baked for 60 minutes at the temperature of 70-120 ℃ after being pulled. Under the condition, the insulating layer with lower leakage current density, smooth surface (the average roughness and the root-mean-square roughness of the film are both lower than 1nm), uniform thickness and compactness can be prepared, so that the leakage current of the device is reduced, and the influence of the defect state at the interface of the semiconductor channel layer/the insulating layer on the saturation mobility deterioration of the device caused by the capture or scattering of electron carriers is also degraded.
In the step (5), a gate electrode is prepared on the PVP insulating layer by using a vacuum thermal evaporation method, the gate electrode is prepared by using alumina as a mask, the thermal evaporation current is controlled to be 65A, the thermal evaporation voltage is controlled to be 60-80V, and the prepared thin film crystalThe gate electrode of the transistor is a metal aluminum electrode. The gate electrode thus obtained has a low resistivity: (<10-6Ω · cm) is advantageous in reducing RC signal delay between the gate electrode and the source and drain electrodes.
Controlling the preparation process to ensure that the channel layer of the finally obtained thin film transistor is a zinc tin aluminum potassium oxide thin film with the thickness of 45-80 nm; the insulating layer is a poly-tetra-ethyl-ene phenol film with the thickness of 160 nm; the source electrode, the drain electrode and the gate electrode are all metal aluminum films with the thickness of 80-120 nm. The thickness control reduces the thickness of the thin film transistor device as much as possible on the premise of ensuring high performance and low energy consumption of the thin film transistor device so as to meet the trend of miniaturization and development of the device.
At present, the preparation of an oxide channel layer of a TFT by a low-cost sol-gel method has been favored by researchers in recent years. However, TFT devices with oxide channel layers fabricated based on sol-gel methods generally have lower mobility than conventional sputtering methods, and are at 240HZThe 8K4K AMOLED display driven by ultrahigh-definition current requires that the mobility of the TFT needs at least 30cm2above/Vs, and the TFT based on the sol-gel process has the problem of high leakage current, so that if the performance of the channel layer material can be improved, the improvement of the performance of the oxide TFT device prepared based on the sol-gel process can be promoted.
Considering that the binding capacity of aluminum ions and potassium ions to oxygen is higher than that of zinc or tin ions to oxygen, theoretically, co-doping of aluminum and potassium can play a certain inhibiting effect on oxygen vacancy defects (providing electron carriers) of the ZTO system. Since the aluminum ion and the potassium ion are respectively in a high metal valence state (+3 valence) and a low metal valence state (+1 valence), the co-doping of aluminum and potassium can be realized by changing the high metal valence state aluminum ion (Al)3+) By adjusting the concentration of potassium ions (K) in a lower valence state1+) The doping content of (2) can be used for finely adjusting the concentration of oxygen vacancy defects in the ZTO material so as to realize the accurate regulation and control of the concentration of electron carriers of the ZTO film. More particularly, the outer electronic structure of aluminum ions and potassium ions is insensitive to direction change and is introduced into the amorphous ZTO materialIt is expected that the material will have a relatively high electron mobility in a state where the molecules are relatively disordered. In addition, the aluminum element and the potassium element are nontoxic, rich in source and low in price, and can be used as a stabilizer of the amorphous structure of the ZTO film. The advantages enable the zinc-tin-aluminum-potassium oxide material to be expected to have good electrical properties (the saturation mobility of the TFT is more than 30 cm) if the zinc-tin-aluminum-potassium oxide material is used as a TFT channel layer prepared by a low-cost sol-gel method2Vs, off-state current < 10-9A. Sub-threshold swing less than 0.20V/decade and on-off ratio greater than 106) And low power consumption (TFT has near zero and positive threshold voltage and leakage current < 10)-10A) The oxide TFT of (1) provides a solution.
Compared with the prior art, the invention has the technical effects that:
the invention takes zinc tin aluminum potassium oxide material as a channel layer, takes organic poly tetra ethyl phenol (PVP) material as an insulating layer, takes aluminum as a source electrode, a drain electrode and a gate electrode, and prepares the TFT with a top gate coplanar structure on a common glass substrate. In the invention, the channel layer and the dielectric layer are both prepared by adopting a dipping and pulling process of a sol-gel method, and the source electrode, the drain electrode and the gate electrode are prepared by adopting a vacuum thermal evaporation method. Finally obtaining a material with higher saturation mobility of 62.3cm2Vs, lower subthreshold swing 0.09V/decade, threshold voltage close to zero 0.23V, lower off-state current: (<10-9A) Low leakage current: (<10-10A) On-off ratio of greater than 106And a zinc tin aluminum potassium oxide thin film transistor operating in enhancement mode. The invention provides a feasible scheme for preparing the oxide thin film transistor with high performance and low energy consumption at low cost.
Drawings
Fig. 1 is a graph showing the transfer characteristics of the thin film transistor having a zinc tin aluminum potassium oxide channel layer obtained in example 1.
Fig. 2 is a leakage current graph of the thin film transistor using the zinc tin aluminum potassium oxide as the channel layer obtained in example 1.
Detailed Description
The technical solution of the present invention is further defined below with reference to the specific embodiments, but the scope of the claims is not limited to the description.
Example 1
A thin film transistor with a zinc-tin-aluminum-potassium oxide as a channel layer is prepared by using glass as a substrate, a zinc-tin-aluminum-potassium oxide thin film as the channel layer, an organic PVP thin film as an insulating layer, and an aluminum thin film as a source electrode, a drain electrode and a gate electrode, wherein the TFT with a top gate coplanar structure is prepared by the following method:
(1) will analyze pure Zn (C)2H3O2)2·5H2O、SnCl2·2H2O、AlCl3·6H2O and KCl 3H2Dissolving O in ethylene glycol, taking ethanolamine as a stabilizer, and stirring at 70 ℃ for 30 hours to form a transparent precursor solution, wherein the concentration of the precursor solution is 0.2M, and Zn (C)2H3O2)2·5H2O、SnCl2·2H2O、AlCl3·6H2O and KCl 3H2The molar ratio of zinc ions, tin ions, aluminum ions and potassium ions in O is 1:2:0.07:0.1, and the volume ratio of ethanolamine to ethylene glycol is 0.2: 100;
(2) standing the obtained precursor solution for 72h, aging, dipping, pulling and coating a film on a glass substrate at the speed of 0.1mm/s, putting the wet film after pulling into an oven, pretreating for 30 minutes at the temperature of 250 ℃, then annealing for 4 hours at the temperature of 400 ℃, wherein the times of dipping, pulling, baking and annealing of the precursor solution on the glass substrate in the oven are all 3 times, and obtaining a 60 nm-thick zinc-tin-aluminum-potassium oxide channel layer;
(3) preparing a 120nm thick metal aluminum thin film on the channel layer by using an aluminum oxide mask with the width-length ratio of 400 mu m/40 mu m as a source electrode and a drain electrode, controlling the thermal evaporation current to be 65A and the thermal evaporation voltage to be 80V, and finally obtaining the metal aluminum electrode of both the source electrode and the drain electrode of the thin film transistor;
(4) immersing the channel layer containing the source electrode layer and the drain electrode layer obtained in the step (3) into PVP acetone precursor solution, carrying out pull coating at the speed of 1.0mm/s, then placing the channel layer in a drying oven at the temperature of 120 ℃ for baking for 60min, and repeating the pull coating to bake for 2 times to form an organic PVP film with the thickness of 160nm as an insulating layer; the PVP acetone precursor solution is prepared by dissolving PVP powder of Sigma-Aldrich company in an acetone solvent and stirring to obtain 75mg/mL PVP acetone precursor solution;
(5) and (3) adopting a vacuum thermal evaporation method, preparing a 120 nm-thick metal aluminum film serving as a gate electrode by using an alumina mask as an auxiliary material on the insulating layer obtained in the step (4), preparing the gate electrode by using alumina as the mask, controlling the thermal evaporation current to be 65A and the thermal evaporation voltage to be 80V, and preparing a metal aluminum electrode serving as the gate electrode of the prepared thin film transistor, thus obtaining the thin film transistor taking zinc-tin-aluminum-potassium oxide as a channel layer.
In this example, the transfer curve of a zinc tin aluminum potassium oxide channel layer based TFT device is shown in fig. 1. It can be concluded that the device operates in enhancement mode with a high saturation mobility of 62.3cm2Vs, lower subthreshold swing 0.09V/decade, threshold voltage close to zero 0.23V, lower off-state current: (<10-9A) And greater than 106The on-off ratio. As can be seen from FIG. 2, the device also has a smaller leakage current<10-10A) The device has lower energy consumption.
Example 2
A thin film transistor with a zinc-tin-aluminum-potassium oxide as a channel layer is prepared by using glass as a substrate, a zinc-tin-aluminum-potassium oxide thin film as the channel layer, an organic PVP thin film as an insulating layer, and an aluminum thin film as a source electrode, a drain electrode and a gate electrode, wherein the TFT with a top gate coplanar structure is prepared by the following method:
(1) will analyze pure Zn (C)2H3O2)2·5H2O、SnCl2·2H2O、AlCl3·6H2O and KCl 3H2Dissolving O in ethylene glycol, taking ethanolamine as a stabilizer, and stirring at 50 ℃ for 24 hours to form a transparent precursor solution, wherein the concentration of the precursor solution is 0.35M, and Zn (C)2H3O2)2·5H2O、SnCl2·2H2O、AlCl3·6H2O and KCl 3H2The molar ratio of zinc ions, tin ions, aluminum ions and potassium ions in O is 1:2:0.07:0.1, and the volume ratio of ethanolamine to ethylene glycol is 0.1: 100;
(2) standing the obtained precursor solution for 72h, aging, dipping, pulling and coating a film on a glass substrate at the speed of 0.3mm/s, putting the wet film after pulling into an oven, pretreating at the temperature of 200 ℃ for 20 minutes, then annealing at the temperature of 350 ℃ for 1 hour, wherein the times of dipping, pulling, baking and annealing of the precursor solution on the glass substrate in the oven are all 2 times, and obtaining a zinc-tin-aluminum-potassium oxide channel layer with the thickness of 50 nm;
(3) preparing a metal aluminum thin film with the thickness of 80nm on the channel layer by using an aluminum oxide mask with the width-length ratio of 400 mu m/40 mu m as a source electrode and a drain electrode, controlling the thermal evaporation current to be 65A and the thermal evaporation voltage to be 60V, and finally obtaining the metal aluminum electrode of both the source electrode and the drain electrode of the thin film transistor;
(4) immersing the channel layer containing the source electrode layer and the drain electrode layer obtained in the step (3) into PVP acetone precursor solution, carrying out pull coating at the speed of 1.0mm/s, then placing the channel layer in a drying oven at the temperature of 70 ℃ for baking for 60min, and repeating the pull coating to bake for 2 times to form an organic PVP film with the thickness of 160nm as an insulating layer; the PVP precursor solution is prepared by dissolving PVP powder of Sigma-Aldrich company in an absolute ethyl alcohol solvent and stirring to obtain 75mg/mL PVP absolute ethyl alcohol precursor solution;
(5) and (3) preparing a metal aluminum film with the thickness of 100nm as a gate electrode by using an aluminum oxide mask as an auxiliary material on the insulating layer obtained in the step (4) and preparing the gate electrode by using aluminum oxide as the mask, controlling the thermal evaporation current to be 65A and the thermal evaporation voltage to be 55V, and enabling the gate electrode of the prepared thin film transistor to be a metal aluminum electrode to obtain the thin film transistor with zinc-tin-aluminum-potassium oxide as a channel layer.
In this embodiment, the thin film transistor device using the zn-sn-al-k oxide as the channel layer works in the enhancement mode, and has a higher saturation mobility of 51.7cm2Vs, lower subthreshold swing 0.19V/decade, threshold voltage close to zero 0.37V, lower off-state current: (<10-9A) Less leakage current: (<10-10A) Andgreater than 106The on-off ratio.
Example 3
A thin film transistor with a zinc-tin-aluminum-potassium oxide as a channel layer is prepared by using glass as a substrate, a zinc-tin-aluminum-potassium oxide thin film as the channel layer, an organic PVP thin film as an insulating layer, and an aluminum thin film as a source electrode, a drain electrode and a gate electrode, wherein the TFT with a top gate coplanar structure is prepared by the following method:
(1) will analyze pure Zn (C)2H3O2)2·5H2O、SnCl2·2H2O、AlCl3·6H2O and KCl 3H2Dissolving O in ethylene glycol, taking ethanolamine as a stabilizer, and stirring at 80 ℃ for 48 hours to form a transparent precursor solution, wherein the concentration of the precursor solution is 0.6M, and Zn (C)2H3O2)2·5H2O、SnCl2·2H2O、AlCl3·6H2O and KCl 3H2The molar ratio of zinc ions, tin ions, aluminum ions and potassium ions in O is 1:2:0.07:0.1, and the volume ratio of ethanolamine to ethylene glycol is 1: 100;
(2) standing the obtained precursor solution for 72h, aging, dipping, pulling and coating a film on a glass substrate at the speed of 0.5mm/s, putting the wet film after pulling into an oven, pretreating for 60 minutes at the temperature of 250 ℃, and then annealing for 5 h at the temperature of 500 ℃, wherein the times of dipping, pulling, baking and annealing of the precursor solution on the glass substrate in the oven are all 4 times, so as to obtain a zinc-tin-aluminum-potassium oxide channel layer with the thickness of 80 nm;
(3) preparing a 120nm thick metal aluminum thin film on the channel layer by using an aluminum oxide mask with the width-length ratio of 400 mu m/40 mu m as a source electrode and a drain electrode, controlling the thermal evaporation current to be 65A and the thermal evaporation voltage to be 80V, and finally obtaining the metal aluminum electrode of both the source electrode and the drain electrode of the thin film transistor;
(4) immersing the channel layer containing the source electrode layer and the drain electrode layer obtained in the step (3) into PVP acetone precursor solution, carrying out pull coating at the speed of 1.0mm/s, then placing the channel layer in a drying oven at the temperature of 120 ℃ for baking for 60min, and repeating the pull coating to bake for 2 times to form an organic PVP film with the thickness of 160nm as an insulating layer; the PVP acetone precursor solution is prepared by dissolving PVP powder of Sigma-Aldrich company in an acetone solvent and stirring to obtain 75mg/mL PVP acetone precursor solution;
(5) and (3) adopting a vacuum thermal evaporation method, preparing a 120 nm-thick metal aluminum film serving as a gate electrode by using an alumina mask as an auxiliary material on the insulating layer obtained in the step (4), preparing the gate electrode by using alumina as the mask, controlling the thermal evaporation current to be 65A and the thermal evaporation voltage to be 80V, and preparing a metal aluminum electrode serving as the gate electrode of the prepared thin film transistor, thus obtaining the thin film transistor taking zinc-tin-aluminum-potassium oxide as a channel layer.
In this embodiment, the thin film transistor device using the zn-sn-al-k oxide as the channel layer works in the enhancement mode, and has a higher saturation mobility of 66.9cm2Vs, lower subthreshold swing 0.16V/decade, threshold voltage close to zero 0.15V, lower off-state current: (<10-9A) Less leakage current: (<10-10A) And greater than 106The on-off ratio.
The saturation mobility, subthreshold swing and threshold voltage of the thin film transistor using the zinc tin aluminum potassium oxide as the channel layer obtained in examples 1 to 3 were compared:
saturation mobility Sub-threshold swing Threshold voltage
Example 1 62.3cm2/Vs 0.09V/decade 0.23V
Example 2 51.7cm2/Vs 0.19V/decade 0.37V
Example 3 66.9cm2/Vs 0.16V/decade 0.15V
The data can show that the invention provides a feasible scheme for preparing the oxide thin film transistor with high performance and low energy consumption at low cost.
Finally, it should be noted that the above embodiments are merely representative examples of the present invention. Obviously, the technical solution of the present invention is not limited to the above-described embodiments, and many variations are possible. All modifications which can be derived or suggested by a person skilled in the art from the disclosure of the present invention are to be considered within the scope of the invention.

Claims (9)

1. A method for preparing a thin film transistor with zinc tin aluminum potassium oxide as a channel layer is characterized by comprising the following steps:
(1) zn (C)2H3O2)2·5H2O、SnCl2·2H2O、AlCl3·6H2O and KCl 3H2Dissolving O in ethylene glycol, taking ethanolamine as a stabilizer, stirring for 24-48 hours at 50-80 ℃ to form a transparent precursor solution, wherein the concentration of the precursor solution is 0.2-0.6mol/L, and Zn (C)2H3O2)2·5H2O、SnCl2·2H2O、AlCl3·6H2O、KCl·3H2In O, zinc ion, tin ion, and aluminum ionThe molar ratio of potassium ions is 1:2:0.07: 0.1;
(2) standing and aging the obtained precursor solution, dipping and pulling a coating film on a glass substrate, putting the wet film after pulling into an oven, pretreating at the temperature of 200-250 ℃ for 20-60 minutes, and then annealing at the temperature of 350-500 ℃ for 1-5 hours to obtain a zinc-tin-aluminum-potassium oxide channel layer;
(3) combining a mask, and preparing a source electrode and a drain electrode on the zinc-tin-aluminum-potassium oxide channel layer obtained in the step (2) by using a vacuum thermal evaporation method;
(4) preparing a PVP insulating layer on a zinc tin aluminum potassium oxide channel layer comprising a source electrode and a drain electrode by using an organic solution dissolved with PVP through a dip-coating process;
(5) and combining the mask, and preparing a gate electrode on the PVP insulating layer by using a vacuum thermal evaporation method to obtain the thin film transistor taking the zinc-tin-aluminum-potassium oxide as a channel layer.
2. The method for preparing a thin film transistor using zinc tin aluminum potassium oxide as a channel layer according to claim 1, wherein in the step (1), the volume ratio of ethanolamine to ethylene glycol is (0.1:100-1: 100).
3. The method of manufacturing a thin film transistor having a zinc-tin-aluminum-potassium oxide as a channel layer according to claim 1, wherein in the step (2), the glass substrate is impregnated with the pull-coating film at a pull rate of 0.1 to 0.5 mm/s.
4. The method for preparing a thin film transistor with a zinc-tin-aluminum-potassium oxide as a channel layer according to claim 1, wherein in the step (2), the precursor solution is dipped and pulled on the glass substrate, baked in the oven and annealed for 2 to 4 times.
5. The method for preparing a thin film transistor with a zinc-tin-aluminum-potassium oxide as a channel layer according to claim 1, wherein in the step (3), a vacuum thermal evaporation method is adopted, and the specific operation steps are as follows: and preparing a source electrode and a drain electrode by taking aluminum oxide as a mask, controlling the thermal evaporation current to be 65A and the thermal evaporation voltage to be 60-80V, and finally obtaining the source electrode and the drain electrode of the thin film transistor which are both metal aluminum electrodes.
6. The method for preparing a thin film transistor with a zinc-tin-aluminum-potassium oxide channel layer as claimed in claim 1, wherein in the step (4), the concentration of the PVP solution is 75mg/mL, and the organic solvent is absolute ethyl alcohol or acetone; in the dipping and pulling process, the pulling speed is controlled to be 1.0mm/s, the dipping and pulling are carried out for 2 times, and the obtained product is baked for 60 minutes at the temperature of 70-120 ℃ after being pulled.
7. The method according to claim 1, wherein in the step (5), a gate electrode is formed on the PVP insulating layer by vacuum thermal evaporation, the gate electrode is formed by using alumina as a mask, the thermal evaporation current is controlled to 65A, the thermal evaporation voltage is controlled to 60-80V, and the gate electrode of the obtained thin film transistor is a metal aluminum electrode.
8. The method for manufacturing a thin film transistor with a zinc-tin-aluminum-potassium oxide as a channel layer according to claim 1, wherein the finally obtained thin film transistor channel layer is controlled to be a zinc-tin-aluminum-potassium oxide thin film with a thickness of 45-80 nm; the insulating layer is a PVP film with the thickness of 160 nm; the source electrode, the drain electrode and the gate electrode are all metal aluminum films with the thickness of 80-120 nm.
9. The thin film transistor with a zinc-tin-aluminum-potassium oxide channel layer prepared by the method for preparing a thin film transistor with a zinc-tin-aluminum-potassium oxide channel layer according to any one of claims 1 to 8.
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