CN108681361A - Detect low-frequency signal processing chip and low-frequency signal processing circuit - Google Patents
Detect low-frequency signal processing chip and low-frequency signal processing circuit Download PDFInfo
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- CN108681361A CN108681361A CN201810477932.3A CN201810477932A CN108681361A CN 108681361 A CN108681361 A CN 108681361A CN 201810477932 A CN201810477932 A CN 201810477932A CN 108681361 A CN108681361 A CN 108681361A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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Abstract
Include VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS pins, OPO pins and INN pins the present invention relates to detection low-frequency signal processing chip and low-frequency signal processing circuit, the detection low-frequency signal processing chip；VCC pin is electrically connected by low pressure difference linear voltage regulator LDO circuit with band-gap reference circuit；INN pins are connected to the cathode of operational amplifier OPA, OPO pins are connected to the output end of operational amplifier OPA, the input terminal of gain amplifier AMP, the cathode of the anode and comparator COMP2 of the output end connection comparator COMP1 of fixed gain amplifier AMP are connected and fixed between OPO pins and the output end of operational amplifier OPA.The chip integration of the present invention is high, peripheral circuit is simple, peripheral cell is few, convenient for miniaturization, system cost is low, strong antijamming capability, will not false triggering, installation and debugging it is convenient.
Description
Technical field
The invention belongs to integrated circuit fields, more particularly to a kind of detection low-frequency signal processing chip and low-frequency signal processing
Circuit.
Background technology
The human body sensing chip of early stage, pin is more, and integrated level is low, and chip periphery needs the components such as more resistance, capacitance
To coordinate chip to realize processing and the control function of signal.
In recent years, occurring the higher human body sensing chip of integrated level in the market, peripheral circuit is simple, element is few, this
The second level bandpass amplifier that class chip remains earlier chip circuit system is used as first order amplifier, and the second level is put
Big device is fully integratible into chip.Since human motion signal frequency is very low, generally 0.3Hz~3Hz, bandpass filter
Required periphery capacitance is typically the electrolytic capacitor of large capacity, can not be integrated, so built-in second level amplifier is all
The broad band amplifier of a fixed gain, since first order amplifier is the bandpass amplifier of a broader bandwidth, therefore this two
The cascade composition of grade amplifier be also a broader bandwidth bandpass amplifier, compared to the chip of early stage, though this kind of chip
So pin is few, peripheral cell is few, circuit is simple, but its anti-interference ability is worse, it is easier to generate false triggering.Another party
Face, the common-mode voltage of the operational amplifier of this kind of chip interior, the reference voltage of two-way amplitude discriminator, and forbid trigger comparator
Reference voltage be all still by supply voltage by resitstance voltage divider partial pressure generate, when mains voltage variations, or hold
Easily there is false triggering.
The existing patent 201620854080.1 announced, discloses a kind of infrared sensing signal processing circuit, this is infrared
Transducing signal processing circuit includes operational amplifier, double threshold comparator, comparator, state controller, block oscillator, delay
Oscillator and two resistance R, the anode input terminal of operational amplifier are connect with the node of two series resistance R, operational amplifier
Output end connect with the input terminal of double threshold comparator, the output end of double threshold comparator is connect with state controller, state
Controller is connect with comparator, block oscillator, delay oscillator.The pin of the utility model is few, package dimension is small, peripheral device
Part is few, when powering on every time, forces self-test work primary, facilitates application product test and debugging.The patent solves conventional core
The common-mode voltage of piece internal arithmetic amplifier quickly changes with supply voltage high-frequency noise and leads to the problem of false triggering, the circuit
A filter capacitor is increased on the divider node of resitstance voltage divider for generating operational amplifier common mode voltage, it is internal to stablize
The common-mode voltage of operational amplifier, but this circuit increases a chip pin and a peripheral capacitance, and the capacitance
With chip interior divider resistance composition be a low-pass filter, low-pass filter can effectively filter out high-frequency noise and interference,
But the low-frequency fluctuation on supply voltage cannot effectively be inhibited.
Invention content
To solve the above problems, that the purpose of the present invention is to provide a kind of integrated levels is high, peripheral cell is few, circuit is simple,
The detection low-frequency signal processing chip and low-frequency signal processing circuit of false triggering can effectively be avoided.
To achieve the above object, technical scheme is as follows.
The present invention provides a kind of detection low-frequency signal processing chip, the processing chip include VDD pins, VCC pin,
OUT pins, TXC pins, VSS pins, LS pins, OPO pins and INN pins；The VDD is patrolled by current source and state control
Circuit electrical connection is collected, is electrically connected with one end of fuse FS between the current source i and the state control logic circuit, it is described molten
The other end ground connection of silk FS；The VCC pin passes through low pressure difference linear voltage regulator LDO (low dropout regulator) electricity
Road is electrically connected with high-precision band-gap reference circuit；The OUT pins pass through driving circuit and the state control logic circuit
Electrical connection；The TXC pins are electrically connected by delay time timer Tx with the state control logic circuit；The state control
Logic circuit processed is electrically connected with blocking time timer Ti；The VSS pins ground connection, the LS pins, which are connected to, forbids triggering to compare
The anode of device COMP3, it is described that the cathode of trigger comparator COMP3 is forbidden to meet reference voltage VR；The INN pins are connected to operation and put
The cathode of big device OPA, the anode of the operational amplifier OPA meet common-mode voltage VM；The OPO pins are connected to the operation amplifier
The output end of device OPA is connected and fixed gain amplifier AMP between the OPO pins and the output end of the operational amplifier OPA
Input terminal, the output end of the fixed gain amplifier AMP is connected with the anode and comparator COMP2 of comparator COMP1
The cathode of cathode, the comparator COMP1 meets reference voltage VH, and the anode of the comparator COMP2 meets reference voltage VL；It is described
The output end of the output end of comparator COMP1 and the comparator COMP2 access or the input terminal of door G2, described or door G2
Output end, the output end for forbidding trigger comparator COMP3 and state control logic circuit are connected to the input terminal with door G1,
The output with door G1 terminates state control logic circuit；The comparator COMP1 and comparator COMP2 compositions are two-way
Amplitude discriminator；The common-mode voltage VM, the reference voltage VH, the reference voltage VL and the reference voltage VR are by described low
Pressure difference linear voltage regulator LDO is generated.
The present invention provides low-frequency signal processing circuit, which includes detection low-frequency signal processing chip and periphery electricity
Road, the processing chip include VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS pins, OPO pins and
INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, photo resistance Rl, periphery electricity
Hold Ci, peripheral capacitance Cf, periphery capacitance Cx and load；Further include having operational amplifier OPA, the place inside the processing chip
The VDD pins of reason chip connect supply voltage input, and the periphery resistance Ra is connected between the VDD pins and the LS pins,
It is grounded by the photo resistance Rl between periphery resistance Ra and the LS pins；An end of the periphery capacitance Cx is connected to
The TXC pins, described the another of periphery capacitance Cx are terminated at the VSS pins and are grounded；The OUT pins are connect by load
Ground；The other end of one end connection transducing signal input of the periphery resistance Ri, the periphery resistance Ri passes through the periphery electricity
Hold Ci and is connected to the INN pins；It is connected to by the periphery capacitance Cf between the periphery resistance Ri and the peripheral capacitance Ci
The OPO pins, the periphery resistance Rf are connected between the INN pins and the OPO pins；It is defeated that the VCC pin meets LDO
Go out；The operational amplifier OPA and peripheral resistance Ri, the peripheral resistance Rf, the periphery capacitance Ci and the periphery
Capacitance Cf constitutes low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
The gain of the multiple feedback narrow-band bandpass amplifier is：
The center angular frequency of the multiple feedback narrow-band bandpass amplifier is：
The centre frequency gain of the multiple feedback narrow-band bandpass amplifier is：
The multiple feedback narrow-band bandpass amplifier-three dB bandwidth is：
Wherein：s：Complex frequency；Ri：Peripheral resistance Ri；Cf：Peripheral capacitance Cf；Ci：Peripheral capacitance Ci；Rf：Peripheral resistance
Rf。
It includes detection low frequency letter to drive low-power load low-frequency signal processing circuit, the circuit the present invention provides reverse phase
Number processing chip and peripheral circuit, the processing chip include that VDD pins, VCC pin, OUT pins, TXC pins, VSS draw
Foot, LS pins, OPO pins and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance
Ra, photo resistance Rl, peripheral capacitance Ci, peripheral capacitance Cf, periphery capacitance Cx and load；Further include having inside the processing chip
Operational amplifier OPA, the VDD pin electric connection of power supply control sources of the processing chip, the load are connected to the VDD pins
Between the OUT pins, the LS pins are connected to by the periphery resistance Ra between the VDD pins and the load,
It is grounded by the photo resistance Rl between the LS pins and the peripheral resistance Ra；An end of the periphery capacitance Cx is connected to
The TXC pins, described the another of periphery capacitance Cx are terminated at the VSS pins and are grounded；One end of the periphery resistance Ri
Transducing signal input is connected, the other end of the periphery resistance Ri is connected to the INN pins by the periphery capacitance Ci；It is described
The OPO pins, the periphery resistance are connected to by the periphery capacitance Cf between peripheral resistance Ri and the peripheral capacitance Ci
Rf is connected between the INN pins and the OPO pins；The VCC pin connects LDO outputs；The operational amplifier OPA and institute
It states peripheral resistance Ri, the peripheral resistance Rf, the periphery capacitance Ci and the periphery capacitance Cf and constitutes a low frequency, list
The multiple feedback narrow-band bandpass amplifier of grade.
The gain of the multiple feedback narrow-band bandpass amplifier is：
The center angular frequency of the multiple feedback narrow-band bandpass amplifier is：
The centre frequency gain of the multiple feedback narrow-band bandpass amplifier is：
The multiple feedback narrow-band bandpass amplifier-three dB bandwidth is：
Wherein：s：Complex frequency；Ri：Peripheral resistance Ri；Cf：Peripheral capacitance Cf；Ci：Peripheral capacitance Ci；Rf：Peripheral resistance
Rf。
The present invention provides high power load low-frequency signal processing circuit, which includes detection low-frequency signal processing core
Piece and peripheral circuit, the processing chip include that VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS draw
Foot, OPO pins and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, photosensitive electricity
Hinder Rl, peripheral capacitance Ci, peripheral capacitance Cf, peripheral capacitance Cx, transistor Q and load；Further include having inside the processing chip
Operational amplifier OPA, the VDD pin electric connection of power supply control sources of the processing chip, an end of the load are connected to described
The base stage of VDD pins, another collector for being terminated at the transistor Q, the transistor Q is connected to the OUT pins, described
The emitter of transistor Q is grounded, and is connected to the LS by the periphery resistance Ra between the VDD pins and the load and is drawn
Foot is grounded between the LS pins and the peripheral resistance Ra by the photo resistance Rl；One end of the periphery capacitance Cx
The TXC pins are connected to, described the another of periphery capacitance Cx is terminated at the VSS pins and is grounded；The periphery resistance Ri's
One end connects transducing signal input, and the other end of the periphery resistance Ri is connected to the INN pins by the periphery capacitance Ci；
The OPO pins, the periphery are connected to by the periphery capacitance Cf between the periphery resistance Ri and the peripheral capacitance Ci
Resistance Rf is connected between the INN pins and the OPO pins；The VCC pin connects LDO outputs；The operational amplifier OPA
A low frequency is constituted with the peripheral resistance Ri, the peripheral resistance Rf, the periphery capacitance Ci and the periphery capacitance Cf
, the multiple feedback narrow-band bandpass amplifier of single-stage.
The gain of the multiple feedback narrow-band bandpass amplifier is：
The center angular frequency of the multiple feedback narrow-band bandpass amplifier is：
The centre frequency gain of the multiple feedback narrow-band bandpass amplifier is：
The multiple feedback narrow-band bandpass amplifier-three dB bandwidth is：
Wherein：s：Complex frequency；Ri：Peripheral resistance Ri；Cf：Peripheral capacitance Cf；Ci：Peripheral capacitance Ci；Rf：Peripheral resistance
Rf。
The present invention provides low cost low-power consumption low-frequency signal processing circuit, which includes detection low-frequency signal processing core
Piece and peripheral circuit, the processing chip include that VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS draw
Foot, OPO pins and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, photosensitive electricity
Hinder Rl, peripheral capacitance Ci, peripheral capacitance Cf, periphery resistance Rx and load；Further include having operation amplifier inside the processing chip
Device OPA, the VDD pins of the processing chip connect supply voltage input, and the periphery resistance Ra is connected to VDD pins and described
Between LS pins, it is grounded by the photo resistance Rl between periphery resistance Ra and the LS pins；The periphery resistance
An end of Rx is connected to the TXC pins, and described the another of periphery resistance Rx is terminated at the VSS pins and is grounded；The OUT draws
Foot passes through carrying ground；One end connection transducing signal input of the periphery resistance Ri, the other end of the periphery resistance Ri are logical
It crosses the periphery capacitance Ci and is connected to the INN pins；By described outer between the periphery resistance Ri and the peripheral capacitance Ci
It encloses capacitance Cf and is connected to the OPO pins, the periphery resistance Rf is connected between the INN pins and the OPO pins；It is described
VCC pin connects LDO outputs；The operational amplifier OPA and peripheral resistance Ri, the peripheral resistance Rf, the periphery electricity
Hold the Ci and periphery capacitance Cf and constitutes low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
The gain of the multiple feedback narrow-band bandpass amplifier is：
The center angular frequency of the multiple feedback narrow-band bandpass amplifier is：
The centre frequency gain of the multiple feedback narrow-band bandpass amplifier is：
The multiple feedback narrow-band bandpass amplifier-three dB bandwidth is：
Wherein：s：Complex frequency；Ri：Peripheral resistance Ri；Cf：Peripheral capacitance Cf；Ci：Peripheral capacitance Ci；Rf：Peripheral resistance
Rf。
The present invention provides inexpensive low-frequency signal processing circuit, which includes detection low-frequency signal processing chip and outer
Enclose circuit, the processing chip includes that VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS pins, OPO draw
Foot and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, photo resistance Rl, outer
Enclose capacitance Ci, peripheral capacitance Cf, periphery resistance Rx and load；Further include having operational amplifier OPA, institute inside the processing chip
The VDD pins for stating processing chip connect supply voltage input, and the periphery resistance Rx is connected to the VDD pins and the TXC pins
Between, the LS pins, the periphery electricity are connect by the periphery resistance Ra between periphery resistance Rx and the VDD pins
It hinders and is grounded by the photo resistance Rl between Ra and the LS pins；The OUT pins pass through carrying ground；The periphery electricity
One end connection transducing signal input of Ri is hindered, described in the other end of the periphery resistance Ri is connected to by the periphery capacitance Ci
INN pins；The OPO pins are connected to by the periphery capacitance Cf between the periphery resistance Ri and the peripheral capacitance Ci,
The periphery resistance Rf is connected between the INN pins and the OPO pins；The VCC pin connects LDO outputs；The operation
The amplifier OPA and peripheral resistance Ri, the peripheral resistance Rf, the periphery capacitance Ci and the periphery capacitance Cf are constituted
One low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
The gain of the multiple feedback narrow-band bandpass amplifier is：
The center angular frequency of the multiple feedback narrow-band bandpass amplifier is：
The centre frequency gain of the multiple feedback narrow-band bandpass amplifier is：
The multiple feedback narrow-band bandpass amplifier-three dB bandwidth is：
Wherein：s：Complex frequency；Ri：Peripheral resistance Ri；Cf：Peripheral capacitance Cf；Ci：Peripheral capacitance Ci；Rf：Peripheral resistance
Rf。
Compared with the existing technology, beneficial effects of the present invention：
(1) power supply electricity of the low pressure difference linear voltage regulator LDO of detection low-frequency signal processing chip of the invention in low frequency
System is constrained than being more than 70dB, can be effectively filtered out the low-frequency fluctuation on supply voltage, be avoided false triggering, and the high frequency on supply voltage
Noise and interference are filtered out by the low frequency bandpass amplifier of the operational amplifier OPA and the resistance of periphery, capacitance composition
's；Secondly, second level amplifier, i.e. fixed gain amplifier AMP is fully integratible into chip interior, outside simplifying circuit, reduce
Element is enclosed, which is the broad band amplifier of a fixed gain；Third, chip interior increase driving circuit, can provide
The driving capability of maximum ± 50mA, can directly drive low-power load；4th, blocking time timer is completely built-in, and by Tx
Time is fixed as 2s or so, can also meet most of applications while reducing chip pin and peripheral cell in this way；5th, no
Pipe triggering is forbidden holding level height, will boot up self-test, and the startup self-detection time is fixed, generally 6s to 20s has
Multiple gears select for client, in order to the installation and debugging of final products；6th, because in various application scenarios, two kinds are touched
Hair working method can not possibly exist simultaneously, so to reduce pin in favor of miniaturization, the present invention is by the chip interior that fuses
Fuse FS select repeatable triggered mode of operation.
(2) resistance, the capacitance group of low-frequency signal processing circuit of the invention, detection low-frequency signal processing chip and periphery
At low frequency and narrow bandwidth bandpass amplifier more effectively filtered out high-frequency noise and interference on supply voltage, which only uses level-one
Bandpass amplifier is achieved that a narrow-band bandpass amplifier, while not increasing peripheral cell, ensure that enough resisting is done
Disturb ability；Secondly, chip interior LDO can also give sensor and the power supplies such as MCU of chip periphery, do not increase peripheral cell and
Under the premise of cost, improves anti-interference ability, avoids false triggering；Third, chip of the present invention can directly drive low-power load,
Without outside connected switch power tube；4th, output delay time Tx are only adjusted with a periphery capacitance Cx, are simplified circuit, are subtracted
Chip pin and peripheral cell are lacked.
(3) reverse phase of the invention drives low-power load low-frequency signal processing circuit, the circuit that can provide maximum -50mA's
Driving capability directly reverse phase can drive low-power load, be not necessarily to outside connected switch power tube；Secondly, low-frequency signal processing is detected
The high frequency that the low frequency and narrow bandwidth bandpass amplifier of chip and the resistance of periphery, capacitance composition has more effectively filtered out on supply voltage is made an uproar
Sound and interference, the circuit are only achieved that a narrow-band bandpass amplifier with level-one bandpass amplifier, are not increasing peripheral cell
While, it ensure that enough anti-interference abilities；Third, chip interior LDO can also give sensor and MCU of chip periphery etc.
Power supply, under the premise of not increasing peripheral cell and cost, improves anti-interference ability, avoids false triggering；；4th, output is prolonged
Slow time Tx is only adjusted with a periphery capacitance Cx, is simplified circuit, is reduced chip pin and peripheral cell.
(4) high power load low-frequency signal processing circuit of the invention, the circuit can drive high power load；Its detection is low
The low frequency and narrow bandwidth bandpass amplifier of audio signalprocessing chip and the resistance of periphery, capacitance composition has more effectively filtered out supply voltage
On high-frequency noise and interference, the circuit be only achieved that a narrow-band bandpass amplifier with level-one bandpass amplifier, do not increasing
While adding peripheral cell, enough anti-interference abilities are ensure that；Secondly, chip interior LDO can also give the biography of chip periphery
The power supplies such as sensor and MCU improve anti-interference ability, avoid false triggering under the premise of not increasing peripheral cell and cost；The
Three, output delay time Tx are only adjusted with a periphery capacitance Cx, are simplified circuit, are reduced chip pin and periphery member
Part.
(5) low cost low-power consumption low-frequency signal processing circuit of the invention, the circuit further decrease circuit system at
This while, also reduces chip power-consumption；It is narrow that it detects the resistance of low-frequency signal processing chip and periphery, the low frequency of capacitance composition
High-frequency noise and the interference on supply voltage are more effectively filtered out with bandpass amplifier, which only uses level-one bandpass amplifier
It is achieved that a narrow-band bandpass amplifier, while not increasing peripheral cell, ensure that enough anti-interference abilities；Its
Secondary, chip interior LDO can also give the power supplies such as sensor and the MCU of chip periphery, before not increasing peripheral cell and cost
It puts, improves anti-interference ability, avoids false triggering；Third, chip of the present invention can directly drive low-power load, without external
Switching power tube；4th, output delay time Tx are only adjusted with a periphery resistance Rx, are simplified circuit, are reduced chip
Pin and peripheral cell, further reduce costs.
(6) inexpensive low-frequency signal processing circuit of the invention, the circuit can further decrease circuit system cost；It is examined
The low frequency and narrow bandwidth bandpass amplifier of the resistance, capacitance composition of surveying low-frequency signal processing chip and periphery has more effectively filtered out power supply
High-frequency noise on voltage and interference, the circuit are only achieved that a narrow-band bandpass amplifier with level-one bandpass amplifier,
While not increasing peripheral cell, enough anti-interference abilities are ensure that；Secondly, chip interior LDO can also give chip periphery
Sensor and the power supplies such as MCU improve anti-interference ability under the premise of not increasing peripheral cell and cost, avoid accidentally touching
Hair；Third, chip of the present invention can directly drive low-power load, be not necessarily to outside connected switch power tube；4th, output delay time Tx
It is only adjusted with a periphery resistance Rx, simplifies circuit, reduces chip pin and peripheral cell, further reduced into
This.
(7) detection low-frequency signal processing chip of the invention only has 8 pins, and integrated level is high, and peripheral circuit is simple, periphery
Element is few, and convenient for miniaturization, system cost is low；Secondly, chip interior operational amplifier OPA and the resistance of periphery, capacitance composition
The narrow-band bandpass amplifier of one low frequency is only achieved that narrow-band bandpass is amplified with level-one bandpass amplifier；Third, in chip
Portion increases band-gap reference circuit and LDO circuit, which not only generates the common-mode voltage of internal amplifier and the reference electricity of amplitude discriminator
Pressure can also give the power supplies such as the sensor of chip periphery, improve anti-interference ability, avoid false triggering；4th, chip interior increases
Driving circuit is added, low-power load can be directly driven；5th, no matter whether ambient light becomes clear, self-test will be booted up,
And the startup self-detection time is fixed, in order to the installation and debugging of final products.
Description of the drawings
Fig. 1 is the circuit diagram of present invention detection low-frequency signal processing chip.
Fig. 2 is the circuit diagram of low-frequency signal processing circuit of the present invention.
Fig. 3 is the circuit diagram of reverse phase driving low-power load low-frequency signal processing circuit of the present invention.
Fig. 4 is the circuit diagram of high power load low-frequency signal processing circuit of the present invention.
Fig. 5 is the circuit diagram of low cost low-power consumption low-frequency signal processing circuit of the present invention.
Fig. 6 is the circuit diagram of inexpensive low-frequency signal processing circuit of the invention.
Specific implementation mode
To achieve the above object, technical scheme is as follows.
Shown in Figure 1, the present invention provides a kind of detection low-frequency signal processing chip, which includes that VDD draws
Foot, VCC pin, OUT pins, TXC pins, VSS pins, LS pins, OPO pins and INN pins；VDD passes through current source and shape
State control logic circuit is electrically connected, and is electrically connected with one end of fuse FS between current source i and state control logic circuit, fuse FS
The other end ground connection；VCC pin by low pressure difference linear voltage regulator LDO (low dropout regulator) circuits with it is high-precision
The band-gap reference circuit of degree is electrically connected；OUT pins are electrically connected by driving circuit with state control logic circuit；TXC pins are logical
Delay time timer Tx is crossed to be electrically connected with state control logic circuit；State control logic circuit and blocking time timer Ti
Electrical connection；VSS pins are grounded, and LS pins are connected to the anode for forbidding trigger comparator COMP3, forbid trigger comparator COMP3's
Cathode meets reference voltage VR；INN pins are connected to the cathode of operational amplifier OPA, and the anode of operational amplifier OPA connects common-mode voltage
VM；OPO pins are connected to the output end of operational amplifier OPA, are connected between OPO pins and the output end of operational amplifier OPA solid
Determine the input terminal of gain amplifier AMP, the output end of fixed gain amplifier AMP is connected with the anode and ratio of comparator COMP1
Compared with the cathode of device COMP2, the cathode of comparator COMP1 meets reference voltage VH, and the anode of comparator COMP2 meets reference voltage VL；
The output end of comparator COMP1 and the output end of comparator COMP2 accesses or the output end of the input terminal of door G2 or door G2,
The output end of trigger comparator COMP3 and state control logic circuit is forbidden to be connected to input terminal with door G1, it is defeated with door G1
Go out to terminate state control logic circuit；Comparator COMP1 and comparator COMP2 form two-way amplitude discriminator；Common-mode voltage VM, reference
Voltage VH, reference voltage VL and reference voltage VR are generated by low pressure difference linear voltage regulator LDO.
Shown in Figure 2, the present invention provides low-frequency signal processing circuit, which includes detection low-frequency signal processing
Chip and peripheral circuit, processing chip include VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS pins,
OPO pins and INN pins；Peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, photo resistance Rl, outer
Enclose capacitance Ci, peripheral capacitance Cf, periphery capacitance Cx and load；Further include having operational amplifier OPA inside processing chip, handles core
The VDD pins of piece connect supply voltage input, and peripheral resistance Ra is connected between VDD pins and LS pins, peripheral resistance Ra and processing
It is grounded by photo resistance Rl between the LS pins of chip；An end of peripheral capacitance Cx is connected to TXC pins, and peripheral capacitance Cx's is another
One end is connected to VSS pins and is grounded；OUT pins pass through carrying ground；One end connection transducing signal input of peripheral resistance Ri, outside
The other end for enclosing resistance Ri is connected to INN pins by peripheral capacitance Ci；Pass through periphery between peripheral resistance Ri and peripheral capacitance Ci
Capacitance Cf is connected to OPO pins, and peripheral resistance Rf is connected between INN pins and OPO pins；VCC pin connects LDO outputs；Operation is put
Big device OPA and peripheral resistance Ri, peripheral resistance Rf, periphery capacitance Ci and periphery capacitance Cf constitute low frequency, single-stage
Multiple feedback narrow-band bandpass amplifier.
Shown in Figure 3, the present invention provides reverse phase driving low-power load low-frequency signal processing circuit, which includes
There is a detection low-frequency signal processing chip and peripheral circuit, processing chip includes that VDD pins, VCC pin, OUT pins, TXC draw
Foot, VSS pins, LS pins, OPO pins and INN pins；Peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, periphery electricity
Hinder Ra, photo resistance Rl, peripheral capacitance Ci, peripheral capacitance Cf, periphery capacitance Cx and load；Further include having fortune inside processing chip
Amplifier OPA, the VDD pin electric connection of power supply control sources of processing chip are calculated, load is connected between VDD pins and OUT pins,
LS pins are connected to by peripheral resistance Ra between VDD pins and load, pass through photo resistance between LS pins and peripheral resistance Ra
Rl is grounded；An end of peripheral capacitance Cx is connected to TXC pins, and the another of peripheral capacitance Cx is terminated at VSS pins and is grounded；Peripheral electricity
One end connection transducing signal input of Ri is hindered, the other end of peripheral resistance Ri is connected to INN pins by peripheral capacitance Ci；Peripheral electricity
OPO pins are connected to by peripheral capacitance Cf between resistance Ri and peripheral capacitance Ci, peripheral resistance Rf is connected to INN pins and OPO pins
Between；VCC pin connects LDO outputs；Operational amplifier OPA and peripheral resistance Ri, peripheral resistance Rf, periphery capacitance Ci and periphery electricity
Hold Cf and constitutes low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
Shown in Figure 4, the present invention provides high power load low-frequency signal processing circuit, which includes that detection is low
Audio signalprocessing chip and peripheral circuit, processing chip include that VDD pins, VCC pin, OUT pins, TXC pins, VSS draw
Foot, LS pins, OPO pins and INN pins；Peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, light
Quick resistance Rl, peripheral capacitance Ci, peripheral capacitance Cf, peripheral capacitance Cx, transistor Q and load；Further include having inside processing chip
Operational amplifier OPA, the VDD pin electric connection of power supply control sources of processing chip, an end of load are connected to VDD pins, another
One end is connected to the collector of transistor Q, and the base stage of transistor Q is connected to OUT pins, the emitter ground connection of transistor Q, VDD pins
LS pins are connected to by peripheral resistance Ra between load, are grounded by photo resistance Rl between LS pins and peripheral resistance Ra；
An end of peripheral capacitance Cx is connected to TXC pins, and the another of peripheral capacitance Cx is terminated at VSS pins and is grounded；Peripheral resistance Ri's
One end connects transducing signal input, and the other end of peripheral resistance Ri is connected to INN pins by peripheral capacitance Ci；Peripheral resistance Ri with
OPO pins are connected to by peripheral capacitance Cf between peripheral capacitance Ci, peripheral resistance Rf is connected between INN pins and OPO pins；
VCC pin connects LDO outputs；Operational amplifier OPA and peripheral resistance Ri, peripheral resistance Rf, periphery capacitance Ci and peripheral capacitance Cf
Constitute low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
Shown in Figure 5, the present invention provides low cost low-power consumption low-frequency signal processing circuit, which includes that detection is low
Audio signalprocessing chip and peripheral circuit, the processing chip include VDD pins, VCC pin, OUT pins, TXC pins,
VSS pins, LS pins, OPO pins and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, periphery
Resistance Ra, photo resistance Rl, peripheral capacitance Ci, peripheral capacitance Cf, periphery resistance Rx and load；It is also wrapped inside the processing chip
Operational amplifier OPA is included, the VDD pins of the processing chip connect supply voltage input, and the periphery resistance Ra is connected to described
Between VDD pins and the LS pins, it is grounded by the photo resistance Rl between periphery resistance Ra and the LS pins；
An end of the periphery resistance Rx is connected to the TXC pins, and described the another of periphery resistance Rx is terminated at the VSS pins and connects
Ground；The OUT pins pass through carrying ground；One end connection transducing signal input of the periphery resistance Ri, the periphery resistance
The other end of Ri is connected to the INN pins by the periphery capacitance Ci；The periphery resistance Ri and peripheral capacitance Ci it
Between the OPO pins are connected to by the periphery capacitance Cf, the periphery resistance Rf is connected to the INN pins and draws with the OPO
Between foot；The VCC pin connects LDO outputs；The operational amplifier OPA and peripheral resistance Ri, the peripheral resistance Rf,
The periphery capacitance Ci and periphery capacitance Cf constitutes low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
Shown in Figure 6, the present invention provides inexpensive low-frequency signal processing circuit, which includes detection low frequency signal
Processing chip and peripheral circuit, the processing chip include VDD pins, VCC pin, OUT pins, TXC pins, VSS pins,
LS pins, OPO pins and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, light
Quick resistance Rl, peripheral capacitance Ci, peripheral capacitance Cf, periphery resistance Rx and load；Further include having operation inside the processing chip
Amplifier OPA, the VDD pins of the processing chip connect supply voltage input, the periphery resistance Rx be connected to the VDD pins with
The LS is met between the TXC pins, between periphery resistance Rx and the VDD pins by the periphery resistance Ra to draw
Foot is grounded between periphery resistance Ra and the LS pins by the photo resistance Rl；The OUT pins are connect by load
Ground；The other end of one end connection transducing signal input of the periphery resistance Ri, the periphery resistance Ri passes through the periphery electricity
Hold Ci and is connected to the INN pins；It is connected to by the periphery capacitance Cf between the periphery resistance Ri and the peripheral capacitance Ci
The OPO pins, the periphery resistance Rf are connected between the INN pins and the OPO pins；It is defeated that the VCC pin meets LDO
Go out；The operational amplifier OPA and peripheral resistance Ri, the peripheral resistance Rf, the periphery capacitance Ci and the periphery
Capacitance Cf constitutes low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
Referring to shown in Fig. 1-6, the gain of multiple feedback narrow-band bandpass amplifier is：
The center angular frequency of multiple feedback narrow-band bandpass amplifier is：
The centre frequency gain of the multiple feedback narrow-band bandpass amplifier is：
The multiple feedback narrow-band bandpass amplifier-three dB bandwidth is：
Wherein：s：Complex frequency；Ri：Peripheral resistance Ri；Cf：Peripheral capacitance Cf；Ci：Peripheral capacitance Ci；Rf：Peripheral resistance
Rf。
The above is merely preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
All any modification, equivalent and improvement made by within principle etc., should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of detection low-frequency signal processing chip, which is characterized in that the processing chip includes VDD pins, VCC pin, OUT
Pin, TXC pins, VSS pins, LS pins, OPO pins and INN pins；The VDD passes through current source and state control logic
Circuit is electrically connected, and is electrically connected with one end of fuse FS between the current source i and the state control logic circuit, the fuse
The other end of FS is grounded；The VCC pin passes through low pressure difference linear voltage regulator LDO (low dropout regulator) circuit
It is electrically connected with high-precision band-gap reference circuit；The OUT pins pass through driving circuit and state control logic circuit electricity
Connection；The TXC pins are electrically connected by delay time timer Tx with the state control logic circuit；The state control
Logic circuit is electrically connected with blocking time timer Ti；The VSS pins ground connection, the LS pins, which are connected to, forbids trigger comparator
The anode of COMP3, it is described that the cathode of trigger comparator COMP3 is forbidden to meet reference voltage VR；The INN pins are connected to operation amplifier
The anode of the cathode of device OPA, the operational amplifier OPA meets common-mode voltage VM；The OPO pins are connected to the operational amplifier
The output end of OPA is connected and fixed gain amplifier AMP's between the OPO pins and the output end of the operational amplifier OPA
The output end of input terminal, the fixed gain amplifier AMP is connected with the anode of comparator COMP1 and bearing for comparator COMP2
The cathode of pole, the comparator COMP1 meets reference voltage VH, and the anode of the comparator COMP2 meets reference voltage VL；The ratio
The output end of output end and the comparator COMP2 compared with device COMP1 accesses or the input terminal of door G2, described or door G2 defeated
Outlet, the output end for forbidding trigger comparator COMP3 and state control logic circuit are connected to the input terminal with door G1, institute
It states and terminates state control logic circuit with the output of door G1；The comparator COMP1 and comparator COMP2 forms two-way mirror
Width device；The common-mode voltage VM, the reference voltage VH, the reference voltage VL and the reference voltage VR are by the low pressure
Difference linear constant voltage regulator LDO is generated.
2. a kind of low-frequency signal processing circuit, which is characterized in that the circuit includes detection low-frequency signal processing chip and periphery
Circuit, the processing chip include VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS pins, OPO pins
With INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, photo resistance Rl, periphery
Capacitance Ci, peripheral capacitance Cf, periphery capacitance Cx and load；Further include having operational amplifier OPA inside the processing chip, it is described
The VDD pins of processing chip connect supply voltage input, the periphery resistance Ra be connected to the VDD pins and the LS pins it
Between, it is grounded by the photo resistance Rl between periphery resistance Ra and the LS pins；One end of the periphery capacitance Cx
The TXC pins are connected to, described the another of periphery capacitance Cx is terminated at the VSS pins and is grounded；The OUT pins pass through negative
Carry ground connection；One end connection transducing signal input of the periphery resistance Ri, the other end of the periphery resistance Ri pass through outside described
It encloses capacitance Ci and is connected to the INN pins；Pass through the peripheral capacitance Cf between the periphery resistance Ri and the peripheral capacitance Ci
The OPO pins are connected to, the periphery resistance Rf is connected between the INN pins and the OPO pins；The VCC pin connects
LDO is exported；The operational amplifier OPA and peripheral resistance Ri, the peripheral resistance Rf, the periphery capacitance Ci and described
Peripheral capacitance Cf constitutes low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
3. a kind of reverse phase drives low-power load low-frequency signal processing circuit, which is characterized in that the circuit includes detection low frequency
Signal processing chip and peripheral circuit, the processing chip include VDD pins, VCC pin, OUT pins, TXC pins, VSS
Pin, LS pins, OPO pins and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance
Ra, photo resistance Rl, peripheral capacitance Ci, peripheral capacitance Cf, periphery capacitance Cx and load；Further include having inside the processing chip
Operational amplifier OPA, the VDD pin electric connection of power supply control sources of the processing chip, the load are connected to the VDD pins
Between the OUT pins, the LS pins are connected to by the periphery resistance Ra between the VDD pins and the load,
It is grounded by the photo resistance Rl between the LS pins and the peripheral resistance Ra；An end of the periphery capacitance Cx is connected to
The TXC pins, described the another of periphery capacitance Cx are terminated at the VSS pins and are grounded；One end of the periphery resistance Ri
Transducing signal input is connected, the other end of the periphery resistance Ri is connected to the INN pins by the periphery capacitance Ci；It is described
The OPO pins, the periphery resistance are connected to by the periphery capacitance Cf between peripheral resistance Ri and the peripheral capacitance Ci
Rf is connected between the INN pins and the OPO pins；The VCC pin connects LDO outputs；The operational amplifier OPA and institute
It states peripheral resistance Ri, the peripheral resistance Rf, the periphery capacitance Ci and the periphery capacitance Cf and constitutes a low frequency, list
The multiple feedback narrow-band bandpass amplifier of grade.
4. a kind of high power load low-frequency signal processing circuit, which is characterized in that the circuit includes detection low-frequency signal processing
Chip and peripheral circuit, the processing chip include that VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS draw
Foot, OPO pins and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, photosensitive electricity
Hinder Rl, peripheral capacitance Ci, peripheral capacitance Cf, peripheral capacitance Cx, transistor Q and load；Further include having inside the processing chip
Operational amplifier OPA, the VDD pin electric connection of power supply control sources of the processing chip, an end of the load are connected to described
The base stage of VDD pins, another collector for being terminated at the transistor Q, the transistor Q is connected to the OUT pins, described
The emitter of transistor Q is grounded, and is connected to the LS by the periphery resistance Ra between the VDD pins and the load and is drawn
Foot is grounded between the LS pins and the peripheral resistance Ra by the photo resistance Rl；One end of the periphery capacitance Cx
The TXC pins are connected to, described the another of periphery capacitance Cx is terminated at the VSS pins and is grounded；The periphery resistance Ri's
One end connects transducing signal input, and the other end of the periphery resistance Ri is connected to the INN pins by the periphery capacitance Ci；
The OPO pins, the periphery are connected to by the periphery capacitance Cf between the periphery resistance Ri and the peripheral capacitance Ci
Resistance Rf is connected between the INN pins and the OPO pins；The VCC pin connects LDO outputs；The operational amplifier OPA
A low frequency is constituted with the peripheral resistance Ri, the peripheral resistance Rf, the periphery capacitance Ci and the periphery capacitance Cf
, the multiple feedback narrow-band bandpass amplifier of single-stage.
5. a kind of low cost low-power consumption low-frequency signal processing circuit, which is characterized in that the circuit includes at detection low frequency signal
It includes VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS to manage chip and peripheral circuit, the processing chip
Pin, OPO pins and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, photosensitive
Resistance Rl, peripheral capacitance Ci, peripheral capacitance Cf, periphery resistance Rx and load；Further include thering is operation to put inside the processing chip
The VDD pins of big device OPA, the processing chip connect supply voltage input, and the periphery resistance Ra is connected to the VDD pins and institute
Between stating LS pins, it is grounded by the photo resistance Rl between periphery resistance Ra and the LS pins；The periphery electricity
An end of resistance Rx is connected to the TXC pins, and described the another of periphery resistance Rx is terminated at the VSS pins and is grounded；The OUT
Pin passes through carrying ground；One end connection transducing signal input of the periphery resistance Ri, the other end of the periphery resistance Ri
It is connected to the INN pins by the periphery capacitance Ci；By described between the periphery resistance Ri and the peripheral capacitance Ci
Peripheral capacitance Cf is connected to the OPO pins, and the periphery resistance Rf is connected between the INN pins and the OPO pins；It is described
VCC pin connects LDO outputs；The operational amplifier OPA and peripheral resistance Ri, the peripheral resistance Rf, the periphery electricity
Hold the Ci and periphery capacitance Cf and constitutes low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
6. a kind of low cost low-frequency signal processing circuit, which is characterized in that the circuit includes detection low-frequency signal processing chip
And peripheral circuit, the processing chip include VDD pins, VCC pin, OUT pins, TXC pins, VSS pins, LS pins,
OPO pins and INN pins；The peripheral circuit includes peripheral resistance Ri, peripheral resistance Rf, peripheral resistance Ra, photo resistance
Rl, peripheral capacitance Ci, peripheral capacitance Cf, periphery resistance Rx and load；Further include having operational amplifier inside the processing chip
OPA, the VDD pins of the processing chip connect supply voltage input, and the periphery resistance Rx is connected to VDD pins and described
Between TXC pins, the LS pins, institute are connect by the periphery resistance Ra between periphery resistance Rx and the VDD pins
It states and is grounded by the photo resistance Rl between peripheral resistance Ra and the LS pins；The OUT pins pass through carrying ground；Institute
One end connection transducing signal input of peripheral resistance Ri is stated, the other end of the periphery resistance Ri is connect by the periphery capacitance Ci
In the INN pins；The OPO is connected to by the periphery capacitance Cf between the periphery resistance Ri and the peripheral capacitance Ci
Pin, the periphery resistance Rf are connected between the INN pins and the OPO pins；The VCC pin connects LDO outputs；It is described
The operational amplifier OPA and peripheral resistance Ri, the peripheral resistance Rf, the periphery capacitance Ci and the peripheral capacitance Cf structures
At low frequency, single-stage multiple feedback narrow-band bandpass amplifier.
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| CN201810477932.3A CN108681361B (en) | 2018-05-18 | 2018-05-18 | Detection low-frequency signal processing chip and low-frequency signal processing circuit |
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