CN104198047A - Built-in oscillator and infrared sensing signal processing circuit with power-on heating function - Google Patents
Built-in oscillator and infrared sensing signal processing circuit with power-on heating function Download PDFInfo
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- CN104198047A CN104198047A CN201410451699.3A CN201410451699A CN104198047A CN 104198047 A CN104198047 A CN 104198047A CN 201410451699 A CN201410451699 A CN 201410451699A CN 104198047 A CN104198047 A CN 104198047A
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Abstract
The invention discloses a built-in oscillator and an infrared sensing signal processing circuit with a power-on heating function. The built-in oscillator comprises a signal amplification module, a signal judgment module, a state control module, an enabling detecting module, an output driving module, a block-time timing module, and a delay-time timing module. A signal amplified by the signal amplification module is input to the signal judgment module, and if the amplified signal exceeds a threshold value, the signal judgment module enables the output driving module to output an indicator signal within a delay time by controlling the state control module. After timing of the delay-time timing module ends, the block-time timing module controls a circuit not to detect an input signal within a block time, and an enabling sampling module is used to control whether or not the circuit detects the input signal. The oscillator has a built-in power-on heating function and performs self-detection once after power-on, and convenience is brought for using and detection. The built-in oscillator is easier to pass EMC (Electro Magnetic Compatibility) certification, and is applicable to products for human body infrared detection or human body ultrashort wave detection.
Description
Technical field
The present invention relates to infrared sensing signal processing circuit technical field, particularly a kind of built-in oscillator and there is the infrared sensing signal processing circuit of the warming-up that powers on.
Background technology
Along with developing rapidly of microelectric technique, computer networking technology and mechanics of communication industry.Human body infrared is responded to and human body is microwave induced all has a wide range of applications in human body sensing illumination, internet of things sensors, Digital Security System, intelligent toy, digital product etc.The external RC of traditional infrared signal processing circuit causes final products to be not easy by authentications such as EMC, the many peripheral components of pin are also many simultaneously, and the final products of traditional infrared signal processing circuit, it is incomplete same when start detects, what some meeting work had does not work, and causes the detection of final products to have certain problem.
How to solve the deficiencies in the prior art and become existing infrared sensing signal processing circuit technical field a great problem.
Summary of the invention
Technical matters to be solved by this invention is overcome the deficiencies in the prior art and a kind of built-in oscillator be provided and have the infrared sensing signal processing circuit of the warming-up that powers on, this circuit can amplify the also signal of detecting sensor, when signal surpasses setting threshold judgement effectively, circuit output high level, control follow-up other circuit or module work, simultaneously built-in timing oscillator; The present invention has the warming-up of powering on function, when powering on, forces self check work once at every turn, facilitates application product test and debugging.
The present invention is for solving the problems of the technologies described above by the following technical solutions:
A kind of built-in oscillator proposing according to the present invention and have the infrared sensing signal processing circuit of the warming-up that powers on, comprises signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block; Wherein,
Signal amplification module, exports signal judge module to for after input signal is amplified;
Signal judge module, compares signal and predefined high threshold voltage, low threshold voltage after amplifying, and the signal after amplifying is greater than high threshold voltage or is less than low threshold voltage, and output trigger pip is to status control module;
Enable detection module, default exports the first high level to status control module while enabling threshold voltage when external input voltage is greater than, and when voltage is less than or equal to, default exports the first low level to status control module while enabling threshold voltage;
Status control module, when circuit powers on and power supply is exported first after stable and controlled signal to delay time time block for the first time, or when enable detection module is output as the first high level, receives trigger pip and export first and control signal to delay time time block, output driver module;
Delay time time block, when receiving the first control signal, start timing, timing finishes rear output the first timing end signal to status control module, and status control module receives not receive trigger pip and export second after the first timing end signal and controls signal to blocking time time block, output driver module;
Blocking time time block, starts timing when receiving the second control signal, and timing finishes rear output the second timing end signal to status control module, and status control module restarts to receive trigger pip after receiving the second timing end signal;
Output driver module, exports the second high level after reception the first control signal, after reception the second control signal, exports the second low level;
Described delay time time block and blocking time time block all comprise respectively oscillator, and described oscillator comprises delays reverser, a PMOS pipe, the 2nd PMOS pipe, the 3rd PMOS pipe, the 4th PMOS pipe, a NMOS pipe, the 2nd NMOS pipe, the 3rd NMOS pipe and electric capacity; Wherein,
The one PMOS pipe, the 2nd PMOS pipe, the source electrode of the 3rd PMOS pipe is all connected with power supply, the drain electrode of the one PMOS pipe, the grid of the one PMOS pipe, the grid of the 2nd PMOS pipe, the grid of the 3rd PMOS pipe is all connected, the drain electrode of the 3rd PMOS pipe is connected with the source electrode of the 4th PMOS pipe, the drain electrode of the drain electrode of the 2nd PMOS pipe and a NMOS pipe, the grid of the one NMOS pipe, the grid of the 2nd NMOS pipe is all connected, the source electrode of the one NMOS pipe is connected with ground, the drain electrode of the drain electrode of the 4th PMOS pipe and the 3rd NMOS pipe, one end of electric capacity, the input end of sluggish reverser connects respectively, the grid of the 4th PMOS pipe, the grid of the 3rd NMOS pipe is connected with the output terminal of sluggish reverser respectively, the source electrode of the 3rd NMOS pipe is connected with the drain electrode of the 2nd NMOS pipe, the source electrode of the 2nd NMOS pipe, the other end of electric capacity is all connected with ground, the drain electrode of the PMOS pipe in described delay time time block, the drain electrode of the PMOS pipe in blocking time time block respectively one end of the resistance different from outside connect, the other end ground connection of resistance.
As a kind of built-in oscillator of the present invention and there is the scheme of further optimization of the infrared sensing signal processing circuit of the warming-up that powers on, also comprise that, for encapsulating the housing of infrared sensing signal processing circuit, 1 ~ No. 8 pin of this housing is respectively: power supply, amplifier output terminal, the input of amplifier negative terminal, enable detection input end, delay time arrange end, blocking time arrange end, drive output; Wherein,
The 1st pin and signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block is all connected, the 2nd, 3 pins are all connected with signal amplification module, the 4th pin is connected with enable detection module, the 5th pin is connected with delay time time block, the 6th pin is connected with blocking time time block, the 7th pin is connected with output driver module, the 8th pin and signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block is all connected.
As a kind of built-in oscillator of the present invention and have the scheme of further optimization of the infrared sensing signal processing circuit of the warming-up that powers on, described delay time time block regulates the time by the 5th pin.
As a kind of built-in oscillator of the present invention and have the scheme of further optimization of the infrared sensing signal processing circuit of the warming-up that powers on, described blocking time time block regulates the time by the 6th pin.
As a kind of built-in oscillator of the present invention and have the scheme of further optimization of the infrared sensing signal processing circuit of the warming-up that powers on, described infrared sensing signal processing circuit adopts 8 pin encapsulation.
The present invention adopts above technical scheme compared with prior art, there is following technique effect: the present invention can use on human body infrared detection and human body microwave testing product, use less peripheral components, amplify the also signal of detecting sensor, when signal surpasses setting threshold judgement effectively, circuit output high level, controls follow-up other circuit or module work, simultaneously built-in timing oscillator; The present invention comprises the warming-up function that powers on, and when powering on, forces self check work once at every turn, facilitates application product test and debugging.
Accompanying drawing explanation
Fig. 1 is circuit structure signal of the present invention.
Fig. 2 is built-in oscillator schematic diagram in delay time time block.
Fig. 3 is ic pin layout viewing of the present invention.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:
Circuit structure signal of the present invention as shown in Figure 1, a kind of built-in oscillator proposing according to the present invention and have the infrared sensing signal processing circuit of the warming-up that powers on, comprises signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block; Wherein,
Signal amplification module, exports signal judge module to for after input signal is amplified;
Signal judge module, compares signal and predefined high threshold voltage, low threshold voltage after amplifying, and the signal after amplifying is greater than high threshold voltage or is less than low threshold voltage, and output trigger pip is to status control module;
Enable detection module, default exports the first high level to status control module while enabling threshold voltage when external input voltage is greater than, and when voltage is less than or equal to, default exports the first low level to status control module while enabling threshold voltage;
Status control module, when circuit powers on and power supply is exported first after stable and controlled signal to delay time time block for the first time, or when enable detection module is output as the first high level, receives trigger pip and export first and control signal to delay time time block, output driver module;
Delay time time block, when receiving the first control signal, start timing, timing finishes rear output the first timing end signal to status control module, and status control module receives not receive trigger pip and export second after the first timing end signal and controls signal to blocking time time block, output driver module;
Blocking time time block, starts timing when receiving the second control signal, and timing finishes rear output the second timing end signal to status control module, and status control module restarts to receive trigger pip after receiving the second timing end signal;
Output driver module, exports the second high level after reception the first control signal, after reception the second control signal, exports the second low level.
Fig. 2 is built-in oscillator schematic diagram in delay time time block.Described delay time time block and blocking time time block all comprise respectively oscillator, and described oscillator comprises again delays reverser, a PMOS pipe P1, the 2nd PMOS pipe P2, the 3rd PMOS pipe P3, the 4th PMOS pipe P4, a NMOS pipe N1, the 2nd NMOS pipe N2, the 3rd NMOS pipe N3 and capacitor C 1; Wherein,
The one PMOS pipe, the 2nd PMOS pipe, the source electrode of the 3rd PMOS pipe is all connected with power supply, the drain electrode of the one PMOS pipe, the grid of the one PMOS pipe, the grid of the 2nd PMOS pipe, the grid of the 3rd PMOS pipe is all connected, the drain electrode of the 3rd PMOS pipe is connected with the source electrode of the 4th PMOS pipe, the drain electrode of the drain electrode of the 2nd PMOS pipe and a NMOS pipe, the grid of the one NMOS pipe, the grid of the 2nd NMOS pipe is all connected, the source electrode of the one NMOS pipe is connected with ground, the drain electrode of the drain electrode of the 4th PMOS pipe and the 3rd NMOS pipe, one end of electric capacity, the input end of sluggish reverser connects respectively, the grid of the 4th PMOS pipe, the grid of the 3rd NMOS pipe is connected with the output terminal of sluggish reverser respectively, the source electrode of the 3rd NMOS pipe is connected with the drain electrode of the 2nd NMOS pipe, the source electrode of the 2nd NMOS pipe, the other end of electric capacity is all connected with ground, the drain electrode of the PMOS pipe in described delay time time block, the drain electrode of the PMOS pipe in blocking time time block respectively one end of the resistance different from outside connect, the other end ground connection of resistance.
The present invention also comprises that, for encapsulating the housing of infrared sensing signal processing circuit, 1 ~ No. 8 pin of this housing is respectively: power supply, amplifier output terminal, the input of amplifier negative terminal, enable detection input end, delay time arrange end, blocking time arrange end, drive output; Wherein,
The 1st pin and signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block is all connected, the 2nd, 3 pins are all connected with signal amplification module, the 4th pin is connected with enable detection module, the 5th pin is connected with delay time time block, the 6th pin is connected with blocking time time block, the 7th pin is connected with output driver module, the 8th pin and signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block is all connected.
Described delay time time block regulates the time by the 5th pin.Described blocking time time block regulates the time by the 6th pin.Described infrared sensing signal processing circuit adopts 8 pin encapsulation.
Fig. 3 is ic pin layout viewing of the present invention, the present invention adopts 8 pin encapsulation, its pin is arranged and from 1 pin of roundel, is started order counterclockwise and be aligned to 8 pin, and 1 ~ No. 8 pin name of the packaged chip of infrared sensing signal processing circuit is respectively: power supply (VDD), amplifier output terminal (1OUT), the input of amplifier negative terminal (1IN1-), enable detection input end (VC), delay time arrange end (TX), blocking time arrange end (TI), drive output (OUT), (GND), wherein, the 1st pin and signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block is all connected, the 2nd, 3 pins are all connected with signal amplification module, the 4th pin is connected with enable detection module, the 5th pin is connected with delay time time block, the 6th pin is connected with blocking time time block, the 7th pin is connected with output driver module, the 8th pin and signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block is all connected.
Delay time time block and blocking time time block have adopted built-in oscillator, delay time time block is identical with built-in oscillator structure in blocking time time block, by sample circuit pin delay time, end (TX) is set, circuit pin blocking time arranges end (TI) external different resistance respectively, be converted to charging and discharging currents, by regulating outer meeting resistance to regulate charging and discharging currents to regulate oscillator frequency, realize and regulate delay time and blocking time, waveform is built into inside circuit, effectively avoided the impact of waveform on outside other device.
Claims (5)
1. a built-in oscillator and there is the infrared sensing signal processing circuit of the warming-up that powers on, it is characterized in that, comprise signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block; Wherein,
Signal amplification module, exports signal judge module to for after input signal is amplified;
Signal judge module, compares signal and predefined high threshold voltage, low threshold voltage after amplifying, and the signal after amplifying is greater than high threshold voltage or is less than low threshold voltage, and output trigger pip is to status control module;
Enable detection module, default exports the first high level to status control module while enabling threshold voltage when external input voltage is greater than, and when voltage is less than or equal to, default exports the first low level to status control module while enabling threshold voltage;
Status control module, when circuit powers on and power supply is exported first after stable and controlled signal to delay time time block for the first time, or when enable detection module is output as the first high level, receives trigger pip and export first and control signal to delay time time block, output driver module;
Delay time time block, when receiving the first control signal, start timing, timing finishes rear output the first timing end signal to status control module, and status control module receives not receive trigger pip and export second after the first timing end signal and controls signal to blocking time time block, output driver module;
Blocking time time block, starts timing when receiving the second control signal, and timing finishes rear output the second timing end signal to status control module, and status control module restarts to receive trigger pip after receiving the second timing end signal;
Output driver module, exports the second high level after reception the first control signal, after reception the second control signal, exports the second low level;
Described delay time time block and blocking time time block all comprise respectively oscillator, and described oscillator comprises sluggish reverser, a PMOS pipe, the 2nd PMOS pipe, the 3rd PMOS pipe, the 4th PMOS pipe, a NMOS pipe, the 2nd NMOS pipe, the 3rd NMOS pipe and electric capacity; Wherein,
The one PMOS pipe, the 2nd PMOS pipe, the source electrode of the 3rd PMOS pipe is all connected with power supply, the drain electrode of the one PMOS pipe, the grid of the one PMOS pipe, the grid of the 2nd PMOS pipe, the grid of the 3rd PMOS pipe is all connected, the drain electrode of the 3rd PMOS pipe is connected with the source electrode of the 4th PMOS pipe, the drain electrode of the drain electrode of the 2nd PMOS pipe and a NMOS pipe, the grid of the one NMOS pipe, the grid of the 2nd NMOS pipe is all connected, the source electrode of the one NMOS pipe is connected with ground, the drain electrode of the drain electrode of the 4th PMOS pipe and the 3rd NMOS pipe, one end of electric capacity, the input end of sluggish reverser connects respectively, the grid of the 4th PMOS pipe, the grid of the 3rd NMOS pipe is connected with the output terminal of sluggish reverser respectively, the source electrode of the 3rd NMOS pipe is connected with the drain electrode of the 2nd NMOS pipe, the source electrode of the 2nd NMOS pipe, the other end of electric capacity is all connected with ground, the drain electrode of the PMOS pipe in described delay time time block, the drain electrode of the PMOS pipe in blocking time time block respectively one end of the resistance different from outside connect, the other end ground connection of resistance.
2. according to claim 1 have power on warming-up function and an adjustable infrared sensing signal processing circuit of time, it is characterized in that, also comprise that, for encapsulating the housing of infrared sensing signal processing circuit, 1 ~ No. 8 pin of this housing is respectively: power supply, amplifier output terminal, the input of amplifier negative terminal, enable detection input end, delay time arrange end, blocking time arrange end, drive output; Wherein,
The 1st pin and signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block is all connected, the 2nd, 3 pins are all connected with signal amplification module, the 4th pin is connected with enable detection module, the 5th pin is connected with delay time time block, the 6th pin is connected with blocking time time block, the 7th pin is connected with output driver module, the 8th pin and signal amplification module, signal judge module, status control module, enable detection module, output driver module, blocking time time block, delay time time block is all connected.
3. according to claim 2 have power on warming-up function and an adjustable infrared sensing signal processing circuit of time, it is characterized in that, described delay time time block regulates the time by the 5th pin.
4. according to claim 2 have power on warming-up function and an adjustable infrared sensing signal processing circuit of time, it is characterized in that, described blocking time time block regulates the time by the 6th pin.
5. according to claim 1 have power on warming-up function and an adjustable infrared sensing signal processing circuit of time, it is characterized in that, described infrared sensing signal processing circuit adopts 8 pin encapsulation.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410451699.3A CN104198047A (en) | 2014-09-05 | 2014-09-05 | Built-in oscillator and infrared sensing signal processing circuit with power-on heating function |
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| CN201410451699.3A CN104198047A (en) | 2014-09-05 | 2014-09-05 | Built-in oscillator and infrared sensing signal processing circuit with power-on heating function |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108681361A (en) * | 2018-05-18 | 2018-10-19 | 泉芯电子技术(深圳)有限公司 | Detect low-frequency signal processing chip and low-frequency signal processing circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001186391A (en) * | 2000-11-10 | 2001-07-06 | Mitsubishi Electric Corp | Infrared camera |
| CN203216613U (en) * | 2013-03-05 | 2013-09-25 | 通泰积体电路股份有限公司 | Pyroelectric type sensing element amplifier and pyroelectric type sensing element detection device |
| US20130272713A1 (en) * | 2012-04-12 | 2013-10-17 | Hon Hai Precision Industry Co., Ltd. | Signal processing circuit |
| CN203301465U (en) * | 2013-06-28 | 2013-11-20 | 歌尔声学股份有限公司 | Infrared signal processing circuit reducing interference |
| CN103593930A (en) * | 2012-08-17 | 2014-02-19 | 成都众山科技有限公司 | Voice antitheft alarm system based on low-voltage general integration power amplifier |
-
2014
- 2014-09-05 CN CN201410451699.3A patent/CN104198047A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001186391A (en) * | 2000-11-10 | 2001-07-06 | Mitsubishi Electric Corp | Infrared camera |
| US20130272713A1 (en) * | 2012-04-12 | 2013-10-17 | Hon Hai Precision Industry Co., Ltd. | Signal processing circuit |
| CN103593930A (en) * | 2012-08-17 | 2014-02-19 | 成都众山科技有限公司 | Voice antitheft alarm system based on low-voltage general integration power amplifier |
| CN203216613U (en) * | 2013-03-05 | 2013-09-25 | 通泰积体电路股份有限公司 | Pyroelectric type sensing element amplifier and pyroelectric type sensing element detection device |
| CN203301465U (en) * | 2013-06-28 | 2013-11-20 | 歌尔声学股份有限公司 | Infrared signal processing circuit reducing interference |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108681361A (en) * | 2018-05-18 | 2018-10-19 | 泉芯电子技术(深圳)有限公司 | Detect low-frequency signal processing chip and low-frequency signal processing circuit |
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