CN108666864B - Hybrid integrated tunable laser and photonic chip - Google Patents
Hybrid integrated tunable laser and photonic chip Download PDFInfo
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- CN108666864B CN108666864B CN201810256571.XA CN201810256571A CN108666864B CN 108666864 B CN108666864 B CN 108666864B CN 201810256571 A CN201810256571 A CN 201810256571A CN 108666864 B CN108666864 B CN 108666864B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1092—Multi-wavelength lasing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
Abstract
The present disclosure provides a hybrid integrated tunable laser and a photonic chip, the hybrid integrated tunable laser including: a semiconductor optical amplifier for emitting light and gaining the transmitted light; the silicon-based tapered coupling waveguide is bonded with the semiconductor optical amplifier, and mode field distribution change is generated through tapered waveguide structures at two ends so that transmitted light is subjected to optical field coupling; and the first silicon-based multimode interference reflector and the second silicon-based multimode interference reflector are respectively arranged at two ends of the laser and are used for reflecting and conducting light back and forth in the laser so as to obtain gain under the action of the semiconductor optical amplifier. The photonic chip is obtained by integrating the hybrid integrated tunable laser and other semiconductor functional devices, has small device size and high integration level, and is easier to realize wide-range and high-precision broadband tuning.
Description
Technical Field
The disclosure relates to the technical field of semiconductor optoelectronic devices, in particular to a hybrid integrated tunable laser and a photonic chip, which can be applied to the fields of optical interconnection, optical switching, optical sensing and the like.
Background
With the increasing demand for information and communication, tunable lasers are becoming indispensable devices in optical communication systems. The method can be applied to a wavelength division multiplexing system as a backup light source to save maintenance time and cost, and can be applied to any place needing wavelength conversion in a communication system, such as a data route in the wavelength division multiplexing system, a reconfigurable optical communication network and the like. There are various schemes for realizing tunable lasers, such as DBR-type semiconductor laser structures, DFB-type semiconductor lasers, and surface emitting lasers, and one important scheme is to form an external cavity laser by combining a semiconductor optical amplifier chip with an external cavity feedback element. External cavity tunable lasers may provide a wider tuning range and narrower linewidth than conventional surface emitting lasers and distributed feedback lasers. However, the conventional external cavity tunable laser generally requires a bulky optical system and mechanical control, and does not satisfy the requirements of the optical communication system on small size and low cost of the tunable laser.
The passive photonic integration technology can provide external feedback for III-V group gain materials by using a micro-nano photonic structure to realize wavelength tuning. In many photonic integration platforms, silicon photonic integration technology can make the devices very compact and low cost due to its natural compatibility with CMOS process lines, large refractive index difference between silicon and silicon dioxide, and other advantages. At present, various silicon-based tunable lasers have been reported at home and abroad, and all the silicon-based tunable lasers comprise a semiconductor optical amplifier, a phase shifter, a ring resonator and a ring reflector or a Bragg reflector, and hybrid integration is realized by using an end face coupling or bonding technology.
However, since the annular reflector in the silicon-based tunable laser structure adopts an annular structure, a relatively large bending radius is required to reduce optical loss, and therefore, the size is relatively large; the bragg reflector has high requirements on the process, and the reflectivity difference of different wavelengths is large, so that the realization of broadband tunability is not facilitated.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
Technical problem to be solved
Based on the above problems, the present disclosure provides a hybrid integrated tunable laser and a photonic chip, so as to solve the technical problems in the prior art that the tunable laser and the photonic chip have large device sizes, high process requirements, difficulty in realizing broadband tuning, few integrated ports externally connected to other functional devices, and the like.
(II) technical scheme
According to an aspect of the present disclosure, there is provided a hybrid integrated tunable laser including: a semiconductor optical amplifier for emitting light and gaining the transmitted light; the silicon-based tapered coupling waveguide is bonded with the semiconductor optical amplifier, and mode field distribution change is generated through tapered waveguide structures at two ends so that transmitted light is subjected to optical field coupling; and the first silicon-based multimode interference reflector and the second silicon-based multimode interference reflector are respectively arranged at two ends of the laser and are used for reflecting and conducting light back and forth in the laser so as to obtain gain under the action of the semiconductor optical amplifier.
In some embodiments of the present disclosure, the hybrid integrated tunable laser further comprises: the silicon-based phase shifter is connected with the silicon-based tapered coupling waveguide and is used for adjusting the phase of light, and the phase shifter comprises a silicon waveguide and a heating electrode arranged on the surface of the silicon waveguide; a silicon-based ring resonator coupled to a silicon-based phase shifter, comprising: the first annular silicon waveguide and a first annular micro-heating electrode arranged on the surface of the first annular silicon waveguide; the second annular silicon waveguide and a second annular micro heating electrode arranged on the surface of the second annular silicon waveguide;
the silicon-based ring resonator realizes the selection and tuning of the wavelength through the temperature change generated by the ring silicon waveguide structure and the micro heating electrode arranged on the surface.
In some embodiments of the present disclosure, the hybrid integrated tunable laser, wherein the first silicon-based multimode interference mirror comprises: a first multimode interferometric self-imaging waveguide; the two sections on one side of the support are vertical to each other; and a first tapered waveguide tapered with a wider side coupled to the first multimode interference self-imaging waveguide,
the second silicon-based multimode interference mirror for transmission and reflection of an optical beam, comprising: a second multimode interferometric self-imaging waveguide; and a second tapered waveguide tapered with a wider side coupled to the second multimode interference self-imaging waveguide;
in some embodiments of the present disclosure, the hybrid integrated tunable laser, wherein the semiconductor optical amplifier is a spindle or elongated structure and is made of a semiconductor gain material, and the gain material includes: GaAs-based, InP-based or GaSb-based quantum wells, quantum dots or nanowire materials.
In some embodiments of the present disclosure, the silicon-based tapered coupling waveguide is a silicon waveguide with two tapered ends, and is connected to the semiconductor optical amplifier by a bonding technique. The bonding technique includes: direct bonding, metal bonding, BCB glue bonding, and/or dielectric bonding.
In some embodiments of the present disclosure, the hybrid integrated tunable laser, wherein the first and second annular silicon waveguides are connected in series and have different annular radius dimensions.
In some embodiments of the present disclosure, the hybrid integrated tunable laser, wherein the electrodes of the first and second annular micro-heating electrodes are made of one or a combination of Ni, Ti, Au, Pt and TiN.
In some embodiments of the present disclosure, the first multimode interference self-imaging waveguide and the second multimode interference self-imaging waveguide have two cross sections perpendicular to each other on one side, and the two cross sections protrude outward and respectively form an angle of 45 ° with a central axis of the multimode interference self-imaging waveguide.
In some embodiments of the present disclosure, the hybrid integrated tunable laser comprises a first silicon-based multimode interference mirror and a second silicon-based multimode interference mirror, wherein one of the first silicon-based multimode interference mirror and the second silicon-based multimode interference mirror comprises at least two tapered silicon waveguides, and the other comprises at least one tapered silicon waveguide.
According to another aspect of the present disclosure, there is provided a photonic chip comprising the hybrid integrated tunable laser of any one of the above; and another semiconductor functional device; the semiconductor functional device is at least one of a silicon-based grating coupler, a silicon-based modulator, a silicon-based detector, a silicon-based optical switching array, a silicon-based router and a silicon-based optical switch.
The photonic chip is obtained by integrating the hybrid integrated tunable laser and the other semiconductor functional device, and is used for realizing optical interconnection, optical switching and/or optical sensing functions.
(III) advantageous effects
According to the technical scheme, the hybrid integrated tunable laser and the photonic chip have at least one or part of the following beneficial effects:
(1) the semiconductor optical amplifier integrates the gain material on the photon chip by adopting the bonding technology, so that an additional independent light source is not needed, and the photon chip has a more complete structure and more comprehensive functions by matching with the arranged double-silicon-based multimode interference reflector.
(2) Compared with a laser provided with a single silicon-based multimode interference reflector, the laser can be provided with output ports at two reflectors and externally connected with other semiconductor functional devices, and is more flexible in designing a photonic chip;
(3) narrow linewidth laser output can be achieved through the silicon-based ring resonator, and wavelength adjustability is achieved by changing the resonance condition of the ring resonator through the micro-heating electrode on the silicon-based ring resonator.
(4) The silicon-based ring resonator comprises two ring-shaped waveguides which are connected in series and have different radiuses, and the tuning range is large.
(5) With a silicon-based multimode interference mirror structure, the reflectivity and transmission rate of the structure for light in a larger wavelength range are less different.
(6) The silicon-based multimode interference reflector can output laser through the output waveguide without an additional structure such as a directional coupler and the like, so that the laser enters other subsequent semiconductor functional devices, and the silicon-based multimode interference reflector is beneficial to size reduction.
(7) Silicon-based multimode interference mirrors using CMOS processes help achieve large tuning ranges, compact device distributions, and lower manufacturing costs.
(8) The hybrid integrated tunable laser and the photonic chip have the advantages of small size, easy integration, low cost, high wavelength tuning precision and the like, and have wide application prospect in the field of integrated photoelectron and optical communication. And the semiconductor optical amplifier and the single silicon-based photonic chip can be finished by the planarization process and the COMS process line of the laser respectively, and the shape control of each part of the device is guaranteed.
Drawings
Fig. 1 is a schematic plan view of a hybrid integrated tunable laser according to an embodiment of the present disclosure.
Fig. 2 is a schematic three-dimensional structure diagram of a silicon-based phase shifter and a silicon-based ring resonator according to an embodiment of the disclosure.
FIG. 3 is a schematic three-dimensional structure diagram of a silicon-based multimode interference mirror according to an embodiment of the disclosure.
Fig. 4 is a schematic plan view of a photonic chip according to an embodiment of the present disclosure.
FIG. 5 is a graph showing the reflection spectrum and the transmission spectrum of a Si-based multimode interference mirror operating at a wavelength around 1550nm according to an embodiment of the present disclosure.
Fig. 6 is a transmission spectrum of a silicon-based ring resonator at a wavelength around 1550nm in an embodiment of the present disclosure.
Fig. 7 is a graph of wavelength tuning induced by a 10 c increase in temperature of a silicon-based ring resonator in an embodiment of the present disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
100-hybrid integrated tunable laser;
110-semiconductor optical amplifier;
120-silicon-based tapered coupling waveguides;
130-silicon based phase shifters;
131-a heating electrode;
140-silicon based ring resonator;
141-a first ring-shaped silicon waveguide; 142-a second ring-shaped silicon waveguide;
143-a first annular micro-heating electrode; 144-a second annular micro-heating electrode;
150-a first silicon-based multimode interference mirror;
151-a first multimode interference self-imaging waveguide;
152-a first tapered waveguide;
160-a second silicon-based multimode interference mirror;
161-a second multimode interference self-imaging waveguide;
162-a second tapered waveguide;
200-semiconductor functional device.
Detailed Description
The invention provides a hybrid integrated tunable laser and a photonic chip, which solve the problems of light feedback and transmission by using a silicon-based multimode interference reflector, realize the selection of wavelength by using a silicon-based ring resonator and a micro-heating electrode on the silicon-based ring resonator, realize the matching of the longitudinal mode of the laser and the wavelength selected by the silicon-based ring resonator by using a silicon-based phase shifter, and finally obtain the hybrid integrated tunable laser for the photonic integrated chip.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
In one embodiment of the present disclosure, a hybrid integrated tunable laser is provided. Fig. 1 is a schematic plan view of a hybrid integrated tunable laser according to an embodiment of the present disclosure, and as shown in fig. 1, a hybrid integrated tunable laser 100 provided in this embodiment includes: a semiconductor optical amplifier 110, a silicon-based phase shifter 130, a silicon-based tapered coupling waveguide 120, a silicon-based ring resonator 140, a first silicon-based multimode interference mirror 150, and a second silicon-based multimode interference mirror 160.
In this embodiment, as shown in fig. 1, the semiconductor optical amplifier 110 may be a spindle-shaped structure with a wide middle part and narrow two ends, or a bar-shaped structure with a uniform middle and two ends, and its material system may cover all semiconductor gain materials transparent to the wavelength of silicon material, such as GaAs-based, InP-based, and GaSb-based quantum well, quantum dot, or nanowire materials.
The semiconductor optical amplifier 110 is fixed to the silicon-based tapered coupling waveguide 120 by a bonding technique. The bonding technique includes: direct bonding, metal bonding (flip chip bonding), BCB glue bonding, dielectric bonding, and the like;
the semiconductor optical amplifier 110 determines whether to etch through the gain region to make a coplanar electrode or not and whether to plate the end surface of the bar-shaped semiconductor optical amplifier according to the bonding manner.
In this embodiment, as shown in fig. 1, the silica-based tapered coupling waveguide 120 is a section of silica-based tapered coupling waveguide with tapered ends and a thin middle, and the coupling region thereof is a bidirectional taper, one end of the silica-based tapered coupling waveguide is connected to one end of the first silica-based multimode interference mirror 150, and the other end of the silica-based tapered coupling waveguide is connected to the silica-based ring resonator 140 through the silica-based phase shifter 130; the silicon-based tapered coupling waveguide 120 has two coupling regions, which are respectively located near two end faces after the semiconductor optical amplifier 110 is bonded, and a thinner straight waveguide is arranged between the two coupling regions, so that when the semiconductor optical amplifier 110 emits light, the silicon-based tapered coupling waveguide 120 couples the optical field into the backward waveguide as much as possible; while the light reflected back by the two mirrors is coupled into the semiconductor optical amplifier 110 as much as possible when passing through the silicon-based tapered coupling waveguide 120, both of these processes result in a sufficiently high gain in the optical field.
In this embodiment, as shown in fig. 1, the silicon-based ring resonator includes a first ring-shaped silicon waveguide 141, a second ring-shaped silicon waveguide 142, a first ring-shaped micro-heating electrode 143, and a second ring-shaped micro-heating electrode 144. The annular micro-heating electrodes 143 and 144 have the same shape as the annular silicon waveguides 141 and 142, respectively, and have slightly wider widths. The micro heating electrode is made of one or a combination of Ni, Ti, Au, Pt and TiN. The first annular silicon waveguide 141 and the second annular silicon waveguide 142 are connected in series, and form two annular resonators together with the first annular micro-heating electrode 143 and the second annular micro-heating electrode 144 to form a silicon-based annular resonator. The ring resonator may be provided with only one for wavelength tuning, but with a smaller tuning range.
In this embodiment, as shown in FIG. 1, the first silicon-based multimode interference mirror 150 comprises a first multimode interference self-imaging waveguide 151, two first tapered waveguides 152, one of the two first tapered waveguides 152 connected to the silicon-based tapered coupling waveguide 120. The second silicon-based multimode interference reflector 160 is connected to the other end of the silicon-based ring resonator 140 and includes a second multimode interference self-imaging waveguide 161 and two second tapered waveguides 162, and one of the two second tapered waveguides 162 is connected to the silicon-based ring resonator 140.
The first multi-mode interference self-imaging waveguide 151 and the second multi-mode interference self-imaging waveguide 161 are both wide waveguides, one side far away from the tapered waveguide is etched into two mutually perpendicular etching sections, the etching sections and the central axis direction of the waveguide form an angle of 45 degrees, the two sections protrude outwards, light reflection is realized by utilizing the total reflection and self-imaging principle, and the number of imaged light spots is related to the length of the wide waveguides. The first silicon-based multimode interference reflector 150 or the second silicon-based multimode interference reflector 160 can be structurally considered as a half of a dual-port MMI, two etched surfaces which are at an angle of 45 degrees with the central axis of the waveguide are used for realizing total reflection, and compared with the method of directly etching a section which is perpendicular to the central axis of the waveguide, the loss can be reduced.
One of the first silicon-based multimode interference mirror 150 and the second silicon-based multimode interference mirror 160 may be single-ported in structure, i.e., one of them comprises at least one tapered silicon waveguide and the other comprises at least two tapered silicon waveguides; the first silicon-based multimode interference mirror 150 and the second silicon-based multimode interference mirror 160 may be arranged identically, or not, but functionally equivalent, and thus may be interchanged to meet different application requirements.
In this embodiment, fig. 2 is a schematic three-dimensional structure diagram of a silicon-based phase shifter and a silicon-based ring resonator according to an embodiment of the present disclosure, as shown in fig. 2, a heating electrode 131 is disposed on a surface of a silicon waveguide of the silicon-based phase shifter, a first ring-shaped micro-heating electrode 143 is disposed on a surface of a first ring-shaped silicon waveguide 141, and a second ring-shaped micro-heating electrode 144 is disposed on a surface of a second ring-shaped silicon waveguide 142.
The heating electrode 131 and the annular micro-heating electrode are made of one or a combination of Ni, Ti, Au, Pt and TiN.
In this embodiment, fig. 3 is a schematic three-dimensional structure diagram of a silicon-based multimode interference mirror according to an embodiment of the present disclosure, and as shown in fig. 3, the silicon-based multimode interference mirror is composed of a wide multimode interference self-imaging waveguide and a narrow tapered waveguide.
In this embodiment, a photonic chip is further provided, fig. 4 is a schematic plan view of the photonic chip according to an embodiment of the present disclosure, and as shown in fig. 4, the hybrid integrated tunable laser 100 is integrated with other semiconductor functional devices 200, that is, a monolithic silicon-based photonic chip is formed.
The semiconductor functional device 200 is selected according to different requirements to face the application of photoelectric integration with different functions, and at least comprises one of a silicon-based grating coupler, a silicon-based modulator, a silicon-based detector, a silicon-based optical switching array, a silicon-based router or a silicon-based optical switch;
the semiconductor functional device 200, such as a silicon-based grating coupler, functions as a device performance test port, and may also be an optical fiber coupling output port; wherein, the silicon-based modulator can be a Mach-Zehnder interferometer type silicon-based modulator or a silicon-based micro-ring modulator; the silicon-based detector may be a silicon-based germanium detector or a silicon-based group III-V semiconductor detector.
The monolithic silicon-based photonic chip is made of SOI materials, the structure of the SOI materials is that a buried oxide layer is introduced between the top silicon and the substrate silicon, the technology is mature, and the heating electrode can be grown and etched by means of a CMOS (complementary metal oxide semiconductor) process platform, so that batch production is realized. The SOI structure can completely isolate the optical field transmitted in the top silicon waveguide from the substrate, thereby eliminating the absorption of the substrate. The technological scheme includes three times of photoetching, three times of etching and three times of etching, but the cost is lower than that of DBR type semiconductor laser and DFB type semiconductor laser because secondary epitaxy and high-precision exposure technology such as electron beam exposure or holographic exposure are not needed.
The hybrid integrated tunable laser and the photonic chip have working wavelength ranging from 1 micron to 1000 microns.
When the hybrid integrated tunable laser works, light emitted by the semiconductor optical amplifier 110 is input into the silicon-based tapered coupling waveguide 140, after coupling, a first path of light is input into the silicon-based phase shifter 130, a specific wavelength is selected through the action of the silicon-based phase shifter 130 and the silicon-based ring resonator 140, then the light is partially reflected at the second silicon-based multimode interference reflector 160, a part of light original path returns to be gained again through the semiconductor optical amplifier, the light is input into the first silicon-based multimode interference reflector 150 and forms resonance amplification with light which starts to enter the first silicon-based multimode interference reflector 150, and the other part of light enters other semiconductor functional devices 200 after passing through the second silicon-based multimode interference reflector 160. The second path of light directly enters the first silicon-based multimode interference reflector 150, after reflection, a part of the original path returns, gain is obtained through the semiconductor optical amplifier, the process carried out by the first path of light is repeated, and the other part of light enters other semiconductor functional devices;
according to the content, the silicon-based multimode interference reflector is used for solving the problems of optical feedback and transmission, the silicon-based ring resonator and the micro heating electrode therein are used for realizing the selection of the wavelength, the silicon-based phase shifter is used for matching the longitudinal mode of the laser with the wavelength selected by the silicon-based ring resonator, and finally the broadband tunable hybrid integrated tunable laser used for the photonic integrated chip is realized. Compared with a ring-shaped reflector, the silicon-based multimode interference reflector has the advantages of small size and wide reflection spectrum; compared with a Bragg reflector, the silicon-based multimode interference reflector has the advantages of low process difficulty, low cost and insensitivity to wavelength. Compared with the arrangement of a single silicon-based multimode interference reflector, the double-silicon-based multimode interference reflector can output optical signals at two reflectors, and the design of a photonic chip can be more flexible; silicon-based multimode interference mirrors using CMOS processes help achieve large tuning ranges, compact device distributions, and lower manufacturing costs.
The hybrid integrated tunable laser and photonic chip provided by the present disclosure are further described with reference to specific embodiments below.
Example 1
In the embodiment, the semiconductor optical amplifier is made of a commercial 1550nm epitaxial material with indium phosphide as a substrate through the steps of photoetching and the like; the silicon-based multimode interference reflector and the silicon-based ring resonator both adopt 220nm SOI materials, and the etching depth is 220 nm; the length of the multimode interference self-imaging area is about 22 mu m, and the circumferences of the two rings are 186 mu m and 169 mu m respectively.
Fig. 5 shows the reflection spectrum and the transmission spectrum corresponding to the silicon-based multimode interference mirror, and it can be seen from fig. 5 that the silicon-based multimode interference mirror is not very sensitive to the wavelength of light and has low loss.
FIG. 6 shows the transmission spectrum of the Si-based ring resonator at around 1550nm, and it can be seen from FIG. 6 that the reflection peak of the Si-based ring resonator is very narrow, which can achieve precise wavelength selection;
fig. 7 is a wavelength tuning diagram of the silicon-based ring resonator caused by 10 ℃ rise in temperature, and it can be seen from fig. 7 that the silicon-based ring resonator can achieve fine wavelength tuning.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Furthermore, the above definitions of the various elements and methods are not limited to the particular structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by one of ordinary skill in the art, for example:
(1) the phase shifter may also be replaced by a phase shifter;
(2) the silicon-based multimode interference reflector can be replaced by a silicon-based multimode interference reflection waveguide;
from the above description, those skilled in the art should clearly recognize that the hybrid integrated tunable laser and photonic chip of the present disclosure.
In summary, the present disclosure provides a hybrid integrated tunable laser and a photonic chip to solve the technical problems in the prior art, such as large device size, high process requirement, difficulty in implementing broadband tuning, etc.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (7)
1. A hybrid integrated tunable laser (100), comprising:
the semiconductor optical amplifier (110) is used for emitting light and enabling the transmitted light to obtain gain, and the semiconductor optical amplifier (110) is in a spindle-shaped or long-strip-shaped structure;
the silicon-based tapered coupling waveguide (120) is bonded with the semiconductor optical amplifier and generates mode field distribution change through tapered waveguide structures at two ends so as to carry out optical field coupling on transmitted light;
a silicon-based phase shifter (130) connected to the silicon-based tapered coupling waveguide (120) for adjusting the phase of light, the phase shifter comprising a silicon waveguide and a heating electrode (131) disposed on a surface thereof;
a silicon-based ring resonator (140) coupled to the silicon-based phase shifter (130), comprising:
a first annular silicon waveguide (141) and a first annular micro-heating electrode (143) arranged on the surface thereof; and
a second annular silicon waveguide (142) and a second annular micro-heating electrode (144) disposed on a surface thereof;
the first annular silicon waveguide (141) and the second annular silicon waveguide (142) are connected in series, and the sizes of the annular radiuses are different;
the silicon-based ring resonator (140) realizes the selection and tuning of the wavelength through the temperature change generated by a ring-shaped silicon waveguide structure and a micro heating electrode arranged on the surface;
the first silicon-based multimode interference reflector (150) and the second silicon-based multimode interference reflector (160) are respectively arranged at two ends of the laser and used for enabling light to be reflected and conducted back and forth in the laser so as to obtain gain under the action of the semiconductor optical amplifier (110);
the first silicon-based multimode interference mirror (150) comprising:
a first multimode interference self-imaging waveguide (151) having two sections on one side perpendicular to each other; and
a first tapered waveguide (152) tapered with a wider side coupled to the first multimode interferometric self-imaging waveguide (151);
the second silicon-based multimode interference mirror (160) for transmission and reflection of an optical beam, comprising:
a second multimode interferometric self-imaging waveguide (161); and
a second tapered waveguide (162) tapered with a wider side coupled to the second multimode interference self-imaging waveguide (161).
2. The hybrid integrated tunable laser (100) according to claim 1, wherein the first (151) and second (161) multimode interference self-imaging waveguides have two sections on one side perpendicular to each other, protruding to the outside and each forming an angle of 45 ° with the central axis of the multimode interference self-imaging waveguide.
3. The hybrid integrated tunable laser (100) of claim 1, wherein the first silicon-based multimode interference mirror (150) and the second silicon-based multimode interference mirror (160) comprise at least two tapered silicon waveguides one of which comprises at least one tapered silicon waveguide.
4. The hybrid integrated tunable laser (100) of claim 1, wherein the electrodes of the first and second annular micro-heating electrodes (143, 144) are made of one or a combination of Ni, Ti, Au, Pt and TiN.
5. The hybrid integrated tunable laser (100) of claim 1, wherein the semiconductor optical amplifier (110) is made of a semiconductor gain material comprising: GaAs-based, InP-based or GaSb-based quantum wells, quantum dots or nanowire materials.
6. The hybrid integrated tunable laser (100) of claim 1, wherein the silicon-based tapered coupling waveguide (120) is a silicon waveguide tapered at both ends, connected to a semiconductor optical amplifier (110) by a bonding technique comprising: direct bonding, metal bonding, BCB glue bonding, and/or dielectric bonding.
7. A photonic chip comprising:
the hybrid integrated tunable laser (100) of any one of claims 1 to 6; and
another semiconductor functional device (200), the another semiconductor functional device (200) is at least one of a silicon-based grating coupler, a silicon-based modulator, a silicon-based detector, a silicon-based optical switch array, a silicon-based router and a silicon-based optical switch;
the hybrid integrated tunable laser (100) and the other semiconductor functional device (200) are integrated to obtain the photonic chip, and the photonic chip is used for realizing optical interconnection, optical switching and/or optical sensing functions.
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| CN110323665B (en) * | 2019-06-27 | 2020-10-16 | 上海交通大学 | Wavelength-adjustable direct modulation silicon-based external cavity laser |
| CN110854673B (en) * | 2019-11-15 | 2021-02-26 | 浙江大学 | Composite structure single longitudinal mode laser based on-chip integrated waveguide and semiconductor nanowire |
| CN112260058A (en) * | 2020-10-23 | 2021-01-22 | 中国科学院半导体研究所 | Single-mode high-power semiconductor laser |
| CN113029218B (en) * | 2021-03-11 | 2022-07-01 | 西北大学 | Vernier effect optical fiber interference sensor demodulation device and method based on silicon-based micro-ring |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107221836A (en) * | 2017-07-06 | 2017-09-29 | 青岛海信宽带多媒体技术有限公司 | A kind of silicon substrate laser and its manufacture method, optical module |
| CN107482475A (en) * | 2016-06-07 | 2017-12-15 | 富士通光器件株式会社 | Tunable laser source |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278770A (en) * | 2005-03-29 | 2006-10-12 | Nec Corp | Variable wavelength laser |
| US20170207600A1 (en) * | 2014-07-14 | 2017-07-20 | Biond Photonics Inc. | 3d photonic integration with light coupling elements |
-
2018
- 2018-03-26 CN CN201810256571.XA patent/CN108666864B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107482475A (en) * | 2016-06-07 | 2017-12-15 | 富士通光器件株式会社 | Tunable laser source |
| CN107221836A (en) * | 2017-07-06 | 2017-09-29 | 青岛海信宽带多媒体技术有限公司 | A kind of silicon substrate laser and its manufacture method, optical module |
Non-Patent Citations (2)
| Title |
|---|
| 《Efficient adiabatic silicon-on-insulator waveguide taper》;Yunfei Fu etc.;《Photonic Research》;20140514;第2卷(第3期);第A41-A44页 * |
| 《On-chip mode-locked laser diode structure using multimode interference reflectors》;C. Gordón etc.;《Photonic Research》;20141223;第3卷(第1期);第15-16页，图1 * |
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