CN108659548A - A kind of preparation method of large scale integrated chip encapsulating material - Google Patents
A kind of preparation method of large scale integrated chip encapsulating material Download PDFInfo
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- CN108659548A CN108659548A CN201810515299.2A CN201810515299A CN108659548A CN 108659548 A CN108659548 A CN 108659548A CN 201810515299 A CN201810515299 A CN 201810515299A CN 108659548 A CN108659548 A CN 108659548A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
- C08K2003/282—Binary compounds of nitrogen with aluminium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
- C08K2003/387—Borates
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a kind of preparation methods of large scale integrated chip encapsulating material, include the following steps:Step 1 weighs following corresponding weight percent raw material for standby:34 40 parts of phenyl vinyl polysiloxane, 26 30 parts of styrene-acrylic emulsion, 14 22 parts of preservative enhancers, 35 parts of reinforcing agent, 24 parts of crosslinking agent, 48 parts of crosslinking accelerator, 37 parts of glass powder, 48 parts of ceramic powder, 13 parts of natural fiber.A kind of preparation method of large scale integrated chip encapsulating material of the present invention, for the material under soda acid, wet environment, performance is still excellent, has good resistance to acid and alkali.
Description
Technical field
The present invention relates to encapsulating material preparing technical fields, and in particular to a kind of large scale integrated chip package material
The preparation method of material.
Background technology
Integrated circuit or microcircuit, microchip, chip are a kind of mode circuit miniaturization in electronics, and
It is normally manufactured on semiconductor wafer surface, it is aforementioned that integrated circuit of the circuit manufacture in semiconductor chip surface is also known as film
Integrated circuit, it is to be integrated into substrate or line by separate semiconductor equipment and passive component separately to have a kind of thick film to blend together integrated circuit
The miniaturized circuit that road plate is constituted, with the breakthrough of IC chip and material technology research and development in recent years, encapsulation technology
Breakthrough raising is obtained, with the development of electronic technology and Electronic Encapsulating Technology, increasingly to encapsulating material performance requirement
Height, many electronic package materials are all ceramics, glass and metal, it has been found that a kind of novel seal material, ring
Oxygen resin material is encapsulated with the pure colloid of epoxy resin, and for opposite other materials, sealing performance is more preferable, and for some spies
Different instrument can directly be embedded in soil and utilize, and will not degenerate.
In the prior art, circuit chip need to use in moist, saline and alkaline place, and encapsulating material performance is bad, leads to chip
Loss of function, Chinese patent literature(Publication number:CN108003830A)It is resistance to disclose a kind of height of large scale integrated chip
The encapsulation of time property, by ic chip package after on pcb board, it is 10~50 to coat a layer thickness on IC chip surface
μm packaging plastic, the packaging plastic includes following composition by weight:40~60 parts of dimethyl silicone polymer;Methyl dimethoxy oxygroup silica
40~60 parts of alkane;30~55 parts of vinyl silicone oil;25~40 parts of hexamethyl cyclotrisiloxane;Hexamethyldisiloxane 10~20
Part;Dimethyl silicone polymer 5~15;3~10 parts of γ-glycidyl ether oxygen propyl trimethoxy silicane;Fluoroalkyl silicone oil 3~7
Part;Age resister 0.5~1, the encapsulating material good toughness, weatherability is good, but in moist, alkaline-resisting environment, performance is not also fine.
Invention content
In view of the drawbacks of the prior art, the object of the present invention is to provide a kind of large scale integrated chip encapsulating materials
Preparation method, for the material under soda acid, wet environment, performance is still excellent, have good resistance to acid and alkali.
The present invention solves technical problem and adopts the following technical scheme that:
The present invention provides a kind of preparation methods of large scale integrated chip encapsulating material, include the following steps:
Step 1 weighs following corresponding weight percent raw material for standby:34-40 parts of phenyl vinyl polysiloxane, styrene-acrylic emulsion 26-
30 parts, 14-22 parts of preservative enhancers, 3-5 parts of reinforcing agent, 2-4 parts of crosslinking agent, 4-8 parts of crosslinking accelerator, 3-7 parts of glass powder, pottery
4-8 parts of porcelain powder, 1-3 parts of natural fiber;
Raw material in step 1 is added sequentially to mix in high-speed mixer, rotating speed is first upgraded to 85-95r/ by step 2
Rotating speed is then risen to 215-225r/min, mixing time 35-45min by min, mixing time 15-25min, is then carried out
It is stirred at reflux, 65-75 DEG C of reflux temperature, return time 2h, reflux terminates to be cooled to room temperature the encapsulating material to get the present invention.
Preferably, the styrene-acrylic emulsion uses styrene, acrylate monomer according to weight ratio(2-6):1, which carries out lotion, gathers
It closes and is made.
Preferably, the styrene-acrylic emulsion uses styrene, acrylate monomer according to weight ratio 3:1 carries out emulsion polymerization system
.
Preferably, the preservative enhancers include following raw material:
25-35 parts of methyl methacrylate, 16-18 parts of butyl acrylate, 4-8 parts of ammonium persulfate, N,N-dimethylformamide 2-6
Part, 4-6 parts of zinc borate, 8-14 parts of aluminium nitride, 1-4 parts of Silane coupling reagent KH-570.
Preferably, the preservative enhancers include following raw material:
30 parts of methyl methacrylate, 17 parts of butyl acrylate, 6 parts of ammonium persulfate, 4 parts of N,N-dimethylformamide, zinc borate 5
Part, 11 parts of aluminium nitride, 3 parts of Silane coupling reagent KH-570.
Preferably, polyphosphoric acids aluminium is also added in the preservative enhancers.
Preferably, the reinforcing agent is expanded graphite, diatomite, aluminium borate whisker according to weight ratio(1-3):(2-6):1
The mixture of composition.
Preferably, the reinforcing agent is expanded graphite, diatomite, aluminium borate whisker according to weight ratio 2:4:1 composition mixes
Close object.
Preferably, the crosslinking agent is acid anhydride type curing agent methyl hexahydrophthalic anhydride.
Preferably, the crosslinking accelerator is trimethylol-propane trimethacrylate.
Compared with prior art, the present invention has following advantageous effect:
(1)Phenyl vinyl polysiloxane high temperature resistant, corrosion-resistant, uvioresistant irradiation performance is good, and styrene-acrylic emulsion is by styrene and third
Olefin(e) acid ester monomer is obtained through emulsion polymerization, water-fast, alkaline resistance properties is good, both as main body base-material, is had cooperative effect, is improved
The acid-proof alkaline of encapsulating material then improves the service life of encapsulating material, glass powder, ceramic powder, the natural fiber of addition
As filler, material resistance to acid and alkali is further increased.
(2)Reinforcing agent of the present invention is expanded graphite, diatomite, aluminium borate whisker according to weight ratio 2:4:The mixing of 1 composition
Object plays the role of associated with other raw materials, and then enhances resistance to acid and alkali,
(3)Methyl methacrylate, butyl acrylate, ammonium persulfate carry out graft reaction, and zinc borate, aluminium nitride are filled out as reinforcement
Material, encapsulating material provide abundant Zn-ef ficiency and aluminium element, effectively enhance anti-corrosion effect.
(4)A kind of preparation method of large scale integrated chip encapsulating material of the present invention, the material is in soda acid, tide
Under wet environment, performance is still excellent, has good resistance to acid and alkali.
Specific implementation mode
With reference to specific embodiment, technical scheme in the embodiment of the invention is clearly and completely described, shows
So, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the reality in the present invention
Example is applied, every other embodiment obtained by those of ordinary skill in the art without making creative efforts all belongs to
In the scope of protection of the invention.
Embodiment 1.
A kind of preparation method of large scale integrated chip encapsulating material of the present embodiment, includes the following steps:
Step 1 weighs following corresponding weight percent raw material for standby:34 parts of phenyl vinyl polysiloxane, 26 parts of styrene-acrylic emulsion,
14 parts of preservative enhancers, 3 parts of reinforcing agent, 2 parts of crosslinking agent, 4 parts of crosslinking accelerator, 3 parts of glass powder, 4 parts of ceramic powder, natural fiber
1 part;
Raw material in step 1 is added sequentially to mix in high-speed mixer, rotating speed is first upgraded to 85r/ by step 2
Min, mixing time 15min, then rise to 215r/min by rotating speed, and mixing time 35-45min is then stirred back
Stream, 65 DEG C, return time 2h of reflux temperature, reflux terminate to be cooled to room temperature the encapsulating material to get the present invention.
The styrene-acrylic emulsion of the present embodiment is using styrene, acrylate monomer according to weight ratio 2:1 carries out emulsion polymerization system
.
The preservative enhancers of the present embodiment include following raw material:
25 parts of methyl methacrylate, 16 parts of butyl acrylate, 4 parts of ammonium persulfate, 2 parts of N,N-dimethylformamide, zinc borate 4
Part, 8 parts of aluminium nitride, 1 part of Silane coupling reagent KH-570.
Polyphosphoric acids aluminium is also added in the preservative enhancers of the present embodiment.
The reinforcing agent of the present embodiment is expanded graphite, diatomite, aluminium borate whisker according to weight ratio 1:2:The mixing of 1 composition
Object.
The crosslinking agent of the present embodiment is acid anhydride type curing agent methyl hexahydrophthalic anhydride.
The crosslinking accelerator of the present embodiment is trimethylol-propane trimethacrylate.
Embodiment 2.
A kind of preparation method of large scale integrated chip encapsulating material of the present embodiment, includes the following steps:
Step 1 weighs following corresponding weight percent raw material for standby:40 parts of phenyl vinyl polysiloxane, 30 parts of styrene-acrylic emulsion,
22 parts of preservative enhancers, 5 parts of reinforcing agent, 4 parts of crosslinking agent, 8 parts of crosslinking accelerator, 7 parts of glass powder, 8 parts of ceramic powder, natural fiber
3 parts;
Raw material in step 1 is added sequentially to mix in high-speed mixer, rotating speed is first upgraded to 95r/ by step 2
Rotating speed is then risen to 225r/min by min, mixing time 25min, and mixing time 45min is then stirred reflux,
75 DEG C, return time 2h of reflux temperature, reflux terminate to be cooled to room temperature the encapsulating material to get the present invention.
The styrene-acrylic emulsion of the present embodiment is using styrene, acrylate monomer according to weight ratio 6:1 carries out emulsion polymerization system
.
The preservative enhancers of the present embodiment include following raw material:
35 parts of methyl methacrylate, 18 parts of butyl acrylate, 8 parts of ammonium persulfate, 6 parts of N,N-dimethylformamide, zinc borate 6
Part, 14 parts of aluminium nitride, 4 parts of Silane coupling reagent KH-570.
Polyphosphoric acids aluminium is also added in the preservative enhancers of the present embodiment.
The reinforcing agent of the present embodiment is expanded graphite, diatomite, aluminium borate whisker according to weight ratio 3:6:The mixing of 1 composition
Object.
The crosslinking agent of the present embodiment is acid anhydride type curing agent methyl hexahydrophthalic anhydride.
The crosslinking accelerator of the present embodiment is trimethylol-propane trimethacrylate.
Embodiment 3.
A kind of preparation method of large scale integrated chip encapsulating material of the present embodiment, includes the following steps:
Step 1 weighs following corresponding weight percent raw material for standby:37 parts of phenyl vinyl polysiloxane, 28 parts of styrene-acrylic emulsion,
18 parts of preservative enhancers, 4 parts of reinforcing agent, 3 parts of crosslinking agent, 6 parts of crosslinking accelerator, 5 parts of glass powder, 6 parts of ceramic powder, natural fiber
2 parts;
Raw material in step 1 is added sequentially to mix in high-speed mixer, rotating speed is first upgraded to 90r/ by step 2
Rotating speed is then risen to 220r/min by min, mixing time 20min, and mixing time 40min is then stirred reflux,
70 DEG C, return time 2h of reflux temperature, reflux terminate to be cooled to room temperature the encapsulating material to get the present invention.
The styrene-acrylic emulsion of the present embodiment is using styrene, acrylate monomer according to weight ratio 3:1 carries out emulsion polymerization system
.
The preservative enhancers of the present embodiment include following raw material:
30 parts of methyl methacrylate, 17 parts of butyl acrylate, 6 parts of ammonium persulfate, 4 parts of N,N-dimethylformamide, zinc borate 5
Part, 11 parts of aluminium nitride, 3 parts of Silane coupling reagent KH-570.
Polyphosphoric acids aluminium is also added in the preservative enhancers of the present embodiment.
The reinforcing agent of the present embodiment is expanded graphite, diatomite, aluminium borate whisker according to weight ratio 2:4:The mixing of 1 composition
Object.
The crosslinking agent of the present embodiment is acid anhydride type curing agent methyl hexahydrophthalic anhydride.
The crosslinking accelerator of the present embodiment is trimethylol-propane trimethacrylate.
Embodiment 4.
A kind of preparation method of large scale integrated chip encapsulating material of the present embodiment, includes the following steps:
Step 1 weighs following corresponding weight percent raw material for standby:32 parts of phenyl vinyl polysiloxane, 24 parts of styrene-acrylic emulsion,
12 parts of preservative enhancers, 2 parts of reinforcing agent, 1 part of crosslinking agent, 3 parts of crosslinking accelerator, 2 parts of glass powder, 6 parts of ceramic powder, natural fiber
0.8 part;
Raw material in step 1 is added sequentially to mix in high-speed mixer, rotating speed is first upgraded to 80r/ by step 2
Rotating speed is then risen to 210r/min by min, mixing time 10min, and mixing time 30min is then stirred reflux,
60 DEG C, return time 2h of reflux temperature, reflux terminate to be cooled to room temperature the encapsulating material to get the present invention.
The styrene-acrylic emulsion of the present embodiment is using styrene, acrylate monomer according to weight ratio 1:1 carries out emulsion polymerization system
.
The preservative enhancers of the present embodiment include following raw material:
20 parts of methyl methacrylate, 14 parts of butyl acrylate, 2 parts of ammonium persulfate, 1.5 parts of N,N-dimethylformamide, boric acid
3 parts of zinc, 6 parts of aluminium nitride, 0.8 part of Silane coupling reagent KH-570.
Polyphosphoric acids aluminium is also added in the preservative enhancers of the present embodiment.
The reinforcing agent of the present embodiment is expanded graphite, diatomite, aluminium borate whisker according to weight ratio 0.8:1.5:1 composition
Mixture.
The crosslinking agent of the present embodiment is acid anhydride type curing agent methyl hexahydrophthalic anhydride.
The crosslinking accelerator of the present embodiment is trimethylol-propane trimethacrylate.
Embodiment 5.
A kind of preparation method of large scale integrated chip encapsulating material of the present embodiment, includes the following steps:
Step 1 weighs following corresponding weight percent raw material for standby:42 parts of phenyl vinyl polysiloxane, 32 parts of styrene-acrylic emulsion,
24 parts of preservative enhancers, 6 parts of reinforcing agent, 6 parts of crosslinking agent, 10 parts of crosslinking accelerator, 8 parts of glass powder, 10 parts of ceramic powder, natural fibre
4 parts of dimension;
Raw material in step 1 is added sequentially to mix in high-speed mixer, rotating speed is first upgraded to 100r/ by step 2
Rotating speed is then risen to 230r/min by min, mixing time 28min, and mixing time 50min is then stirred reflux,
80 DEG C, return time 2h of reflux temperature, reflux terminate to be cooled to room temperature the encapsulating material to get the present invention.
The styrene-acrylic emulsion of the present embodiment is using styrene, acrylate monomer according to weight ratio 8:1 carries out emulsion polymerization system
.
The preservative enhancers of the present embodiment include following raw material:
40 parts of methyl methacrylate, 20 parts of butyl acrylate, 10 parts of ammonium persulfate, 8 parts of N,N-dimethylformamide, zinc borate
8 parts, 16 parts of aluminium nitride, 6 parts of Silane coupling reagent KH-570.
Polyphosphoric acids aluminium is also added in the preservative enhancers of the present embodiment.
The reinforcing agent of the present embodiment is expanded graphite, diatomite, aluminium borate whisker according to weight ratio 4:8:The mixing of 1 composition
Object.
The crosslinking agent of the present embodiment is acid anhydride type curing agent methyl hexahydrophthalic anhydride.
The crosslinking accelerator of the present embodiment is trimethylol-propane trimethacrylate.
The present invention pass through a large amount of experimental demonstration, a kind of preparation method of large scale integrated chip encapsulating material,
For the material under soda acid, wet environment, performance is still excellent, has good resistance to acid and alkali.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Profit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent requirements of the claims
Variation is included within the present invention.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiment being appreciated that.
Claims (10)
1. a kind of preparation method of large scale integrated chip encapsulating material, which is characterized in that include the following steps:
Step 1 weighs following corresponding weight percent raw material for standby:34-40 parts of phenyl vinyl polysiloxane, styrene-acrylic emulsion 26-
30 parts, 14-22 parts of preservative enhancers, 3-5 parts of reinforcing agent, 2-4 parts of crosslinking agent, 4-8 parts of crosslinking accelerator, 3-7 parts of glass powder, pottery
4-8 parts of porcelain powder, 1-3 parts of natural fiber;
Raw material in step 1 is added sequentially to mix in high-speed mixer, rotating speed is first upgraded to 85-95r/ by step 2
Rotating speed is then risen to 215-225r/min, mixing time 35-45min by min, mixing time 15-25min, is then carried out
It is stirred at reflux, 65-75 DEG C of reflux temperature, return time 2h, reflux terminates to be cooled to room temperature the encapsulating material to get the present invention.
2. a kind of preparation method of large scale integrated chip encapsulating material according to claim 1, feature exist
In the styrene-acrylic emulsion is using styrene, acrylate monomer according to weight ratio(2-6):1, which carries out emulsion polymerization, is made.
3. a kind of preparation method of large scale integrated chip encapsulating material according to claim 2, feature exist
In the styrene-acrylic emulsion is using styrene, acrylate monomer according to weight ratio 3:1, which carries out emulsion polymerization, is made.
4. a kind of preparation method of large scale integrated chip encapsulating material according to claim 1, feature exist
In the preservative enhancers include following raw material:
25-35 parts of methyl methacrylate, 16-18 parts of butyl acrylate, 4-8 parts of ammonium persulfate, N,N-dimethylformamide 2-6
Part, 4-6 parts of zinc borate, 8-14 parts of aluminium nitride, 1-4 parts of Silane coupling reagent KH-570.
5. a kind of preparation method of large scale integrated chip encapsulating material according to claim 4, feature exist
In the preservative enhancers include following raw material:
30 parts of methyl methacrylate, 17 parts of butyl acrylate, 6 parts of ammonium persulfate, 4 parts of N,N-dimethylformamide, zinc borate 5
Part, 11 parts of aluminium nitride, 3 parts of Silane coupling reagent KH-570.
6. a kind of preparation method of large scale integrated chip encapsulating material according to claim 4, feature exist
In also added with polyphosphoric acids aluminium in the preservative enhancers.
7. a kind of preparation method of large scale integrated chip encapsulating material according to claim 1, feature exist
In the reinforcing agent is expanded graphite, diatomite, aluminium borate whisker according to weight ratio(1-3):(2-6):The mixture of 1 composition.
8. a kind of preparation method of large scale integrated chip encapsulating material according to claim 7, feature exist
In the reinforcing agent is expanded graphite, diatomite, aluminium borate whisker according to weight ratio 2:4:The mixture of 1 composition.
9. a kind of preparation method of large scale integrated chip encapsulating material according to claim 1, feature exist
In the crosslinking agent is acid anhydride type curing agent methyl hexahydrophthalic anhydride.
10. a kind of preparation method of large scale integrated chip encapsulating material according to claim 1, feature exist
In the crosslinking accelerator is trimethylol-propane trimethacrylate.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104592932A (en) * | 2015-02-12 | 2015-05-06 | 中国工程物理研究院化工材料研究所 | High-power LED packaging adhesive composition |
CN105038256A (en) * | 2015-07-13 | 2015-11-11 | 张小龙 | Chip packaging material for computer |
CN105419247A (en) * | 2015-12-11 | 2016-03-23 | 安徽律正科技信息服务有限公司 | Computer chip packaging material |
-
2018
- 2018-05-25 CN CN201810515299.2A patent/CN108659548A/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104592932A (en) * | 2015-02-12 | 2015-05-06 | 中国工程物理研究院化工材料研究所 | High-power LED packaging adhesive composition |
CN105038256A (en) * | 2015-07-13 | 2015-11-11 | 张小龙 | Chip packaging material for computer |
CN105419247A (en) * | 2015-12-11 | 2016-03-23 | 安徽律正科技信息服务有限公司 | Computer chip packaging material |
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