A kind of preparation method of diamond boron carbide composite material
Technical field
The present invention relates to technical field of inorganic material, and in particular to a kind of preparation side of diamond boron carbide composite material
Method.
Background technology
Boron carbide(boron carbide ), alias black diamond, molecular formula B4C, usually grey black micro mist.It is known
One of three kinds of most hard materials(Other two kinds are diamond, cubic boron nitride), for the plate armour of tank, bulletproof jacket and
In many commercial Application product.Its mohs hardness is 9.3.
The byproduct that it is studied in 19th century as metal boride is found, and is just scientifically ground until generation nineteen thirty
Study carefully.Boron carbide can be made by reduction with carbon diboron trioxide in electric furnace.Boron carbide can absorb a large amount of neutron without being formed
Any radioactive isotope, thus it in nuclear energy power generation field it be highly desirable neutron-absorbing material, and neutron-absorbing material is main
It is the rate for controlling nuclear fission.Boron carbide be mainly made as in nuclear reaction stove field it is controllable rodlike, but sometimes can be because
It is made powdered for surface area to be increased.Because having, density is low, intensity is big, high-temperature stability and chemical stability are good
The characteristics of.In wear-resistant material, ceramic enhancement phase, especially in lightweight armor, pile neutron absorbent etc. uses.In addition,
It is compared with diamond with cubic boron nitride, boron carbide manufacture is easy, is of low cost, thus use is more extensive, in some places
The application that expensive diamond can be replaced, be commonly in grinding, grinding, drilling etc..
Due to the excellent properties of boron carbide, the composite material type of boron carbide is various, common to add answering for metal for boron carbide
Conjunction mode belongs to technical blank field on the composite material of boron carbide diamond, and diamond boron carbide composite material has
The advantages that intensity is high, wilfulness is good, density.
Invention content
The present invention provides a kind of preparation method of diamond boron carbide composite material, and material requested is:Diamond, carbonization
Boron, metallic silicon, binder, additive,
Preparation method is:
1)Mixing:By diamond and boron carbide according to 3:7 ratio is mixed, and the bonding for accounting for total weight 6% to 8% is then added
Agent, the additive for accounting for total weight 1%, the secondary mixing of alcohol progress for accounting for total weight 50%;
2)It is granulated:Powdered mixture is subjected to mist projection granulating;
3)Compacting:Fine-grained mixture is placed in mold, boron cake is pressed under 30 megapascal to the pressure of 80 megapascal;
4)It is dry:By in the boron cake merging hothouse of compression moulding, carries out slowly heating drying, drying temperature and slowly risen from room temperature
To 130 degrees Celsius to 200 degrees Celsius, heating takes as 24H, and heating rate is at the uniform velocity to heat up;
5)With silicon:Metallic silicon power 40 mesh of the silicone content more than 99% is taken to be mixed to 160 mesh with the binder for accounting for total weight 3%,
Uniformly mixed silica flour is pressed into silicon cake;
6)Sintering:The overlapping of silicon cake is placed on boron cake, is placed into vacuum drying oven and is sintered, sintering temperature is 1480 degrees Celsius
To 1600 degrees Celsius, vacuum degree is less than or equal to 10pa;
7)It is cooling:By the plank furnace cooling of sinter molding, it is cooled to room temperature taking-up.
8)Except silicon:The white residue of surface residual is subjected to blasting treatment.
Preferably, the pressed density of the boron cake is 1.8 grams per cubic centimeter to 2.25 grams per cubic centimeter.
Preferably, in the sintering process silicon cake and boron cake weight ratio 0.8 to 1:1.
Preferably, the binder is phenolic resin, and the additive is surfactant, and main component is Aluminate
Chelate.
Preferably, the alternative except the blasting treatment mode for removing surface residual debris during silicon is burnishing part
Reason.
Compared with prior art, the present invention has the advantages that:The diamond boron carbide composite material of the present invention
Preparation method, manufacture craft is simple, and prepared diamond boron carbide composite material has that intensity is high, wilful good, density
The advantages that, wherein the making of finished product can be achieved greatly in diamond proportion controlled range from 5% to 70%, shared by diamond
The difference of ratio, product show a variety of different excellent properties.
Specific implementation mode
The present invention is described further below:
The preparation method of the diamond boron carbide composite material of the present invention, material requested are:Diamond, boron carbide, metallic silicon,
Binder, additive,
Preparation method is:
1)Mixing:By diamond and boron carbide according to 3:7 ratio is mixed, and the bonding for accounting for total weight 6% to 8% is then added
Agent, the additive for accounting for total weight 1%, the secondary mixing of alcohol progress for accounting for total weight 50%;
2)It is granulated:Powdered mixture is subjected to mist projection granulating;
3)Compacting:Fine-grained mixture is placed in mold, boron cake is pressed under 30 megapascal to the pressure of 80 megapascal;
4)It is dry:By in the boron cake merging hothouse of compression moulding, carries out slowly heating drying, drying temperature and slowly risen from room temperature
To 130 degrees Celsius to 200 degrees Celsius, heating takes as 24H, and heating rate is at the uniform velocity to heat up;
5)With silicon:Metallic silicon power 40 mesh of the silicone content more than 99% is taken to be mixed to 160 mesh with the binder for accounting for total weight 3%,
Uniformly mixed silica flour is pressed into silicon cake;
6)Sintering:The overlapping of silicon cake is placed on boron cake, is placed into vacuum drying oven and is sintered, sintering temperature is 1480 degrees Celsius
To 1600 degrees Celsius, vacuum degree is less than or equal to 10pa;
7)It is cooling:By the plank furnace cooling of sinter molding, it is cooled to room temperature taking-up.
8)Except silicon:The white residue of surface residual is subjected to blasting treatment.
Embodiment 1:
The diamond of 90% boron carbide 10% is mixed, the mixture such as above method carries out preparing diamond boron carbide compound
Material, pressed density are 1.7 grams per cubic centimeter to 1.75 grams per cubic centimeter, silicon cake and boron cake during sintering process
Weight ratio 1.1:1 to 1.2:1.
Embodiment 2:
The diamond of 30% boron carbide 70% is mixed, the mixture such as above method carries out preparing diamond boron carbide compound
Material, pressed density are 1.9 grams per cubic centimeter to 1.95 grams per cubic centimeter, silicon cake and boron cake during sintering process
Weight ratio 0.6:1 to 0.8:1.
The major function of the surfactant of additive is package diamond and carbonization boron surface, is prevented in sintering process
Metallic silicon further corrodes boron carbide and diamond.
Using technical solutions according to the invention or those skilled in the art under the inspiration of technical solution of the present invention,
Similar technical solution is designed, and reaches above-mentioned technique effect, is to fall into protection scope of the present invention.