A kind of in-situ carburization silica fibre enhancing liquid phase sintering silicon carbide ceramic and manufacture method
Technical field
The present invention relates to a kind of high-strength carborundum ceramics and manufacture method technical field.
Background technology
Thyrite have elevated temperature strength is big, high-temperature oxidation resistance is strong, abrasion resistance properties are good, heat endurance is good,
Thermal coefficient of expansion is small, thermal conductivity is big, hardness is high, anti-thermal shock and the good characteristic such as resistant to chemical etching, in automobile, mechanical chemical industry, ring
There is increasingly extensive application in the fields such as border protection, space technology, information electronics, the energy, have become a kind of in many industry
The irreplaceable structural ceramics of the other materials of field excellent performance.
Dynamic sealing in plant equipment is carried out by the rotational slide of two seal face materials, as sealed end
Plane materiel material, it is desirable to which hardness is high, has wear resistance.The hardness of silicon carbide ceramics is at a relatively high and coefficient of friction is small, therefore carborundum is made pottery
Porcelain can obtain the sliding properties that other materials are unable to reach as mechanical seal end surface material.On the other hand, two end faces are close
Closure material can produce certain heat in rotary movement due to rubbing, so that the local temperature rise of seal face,
Therefore face material must also be able to be resistant to certain temperature.In order to avoid end face seal material produces during rotational slide
Thermal strain and hot tearing, it is desirable to which the thermal conductivity factor of face material is high, good thermal shock.At present, silicon carbide ceramics is in all kinds of machines
Substantial amounts of application is obtained in tool sealing, and very big contribution is made that for the laborsaving of plant equipment and energy-conservation, shows other materials
The incomparable superiority of material.Silicon carbide ceramics is also used successfully as various bearings, cutting tool in mechanical industry.
In the automotive industry, in order to improve the thermal efficiency of engine, the energy is made full use of, reduces fuel consumption, is reduced big
Gas is polluted, it is desirable to which higher than 1200 DEG C, (according to calculating, the operating temperature of engine is brought up to the operating temperature of engine by 1100 DEG C
At 1370 DEG C, 30%) thermal efficiency can increase.Silicon carbide ceramics elevated temperature strength because possessed by, relatively low thermal coefficient of expansion are higher
Thermal conductivity factor and preferable thermal-shock resistance and be considered as more than 1200 DEG C most promising candidate materials of temperature in use.Gather around
Such as U.S., Germany and the Japan of country for having advanced ceramics technology has been developed that the engine component using silicon carbide ceramics as sent out
Motivation stator, rotor, burner and scroll casing simultaneously achieve good using effect, are just being directed to full ceramic engine at present
Developmental research.
Aero-Space, atomic energy industry etc., which need to be resistant in the occasion of ultra-high temperature such as nuclear fission and fusion reactor, to be needed
That wants bears the heat proof material of 2000 degree or so high temperature;Rocket and aerospace craft surface are used to be resistant to and air severe friction
In caused by up to thousands of K temperature thermal insulation tile;Rocket chamber's larynx lining and inner lining material, gas-turbine blade;It is high
Top plate, the support of warm stove, and the high-temperature component such as fixture of high temperature experiment also generally use silicon carbide ceramics component.Carborundum
Ceramics are also widely used as various corrosion-resistant container and pipelines in petro chemical industry.
Extensive use due to the high-performance of silicon carbide ceramics and in industrial circle, SiC sintering is always material circle
The focus of research.But because carborundum is a kind of extremely strong covalent key compound of covalency, at a high temperature of 2100 DEG C, C
1.5 × 10 are also only with Si self-diffusion coefficient-10With 2.5 × 10-13cm2/s.So SiC is difficult sintering, it is necessary to by sintering
Auxiliary agent or external pressure are only possible to be densified (Krishi Negita, Effective sintering in 2000 DEG C of implemented below
aids for silicon carbide ceramics:reactivities of silicon carbide with
Various additives, J.Am.Ceram.Soc., 1986,69 (12):C308-310.).It is understood that in such high temperature
Under, if it is possible to certain operating temperature is reduced, energy consumption will sharp reduce, so how to be burnt at alap temperature
Knot obtains the silicon carbide ceramics product of high relative density (> 98%), meets different industrial circles to high-end silicon carbide ceramics system
The demand of product, it has also become silicon carbide ceramics industry general character key issue urgently to be resolved hurrily.
Hot pressed sintering drives addition in powder or does not add sintering aid, hot pressed sintering reaches before sintering by means of external pressure
98% consistency usually requires 2000 DEG C or so of temperature, and such as east of a river is bright in silicate journal 1981, No.9,133-146
The SiC+1%B under the conditions of 2050 DEG C is reported4Under 45 minutes process conditions of C+3%C architecture heat preservations, density reaches theoretical fine and close
The 98.75% of degree.Also system sintering temperature of the part using Al, B, C as sintering aid is less than 2000 DEG C, such as Huang Hanquan
In 1991,9 (2):It is reported in 1650 DEG C -1950 DEG C on 70-77, under 50MPa hot pressing condition, relative density height can be obtained
In 98% sintered body.But hot pressed sintering can only prepare the silicon carbide components of simple shape, and pass through once sintered process
The quantity of prepared product seldom can not be realized and commercially produced.Comparatively speaking, pressureless sintering is high-performance silicon carbide pottery
Porcelain industrializes most promising sintering method.It can be divided into solid phase according to from state pressureless sintering of the auxiliary agent in sintering process
Sintering and liquid-phase sintering.The method for being occurred without the second phase of melting in sintering process using B, C and Al or its compound is claimed
Make solid-phase sintering.Solid phase sintering temperature is higher, and generally more than 2000 DEG C, and the purity requirement to raw material is also very high, such as
S.Prochazka (S.Prochazka, Ceramics for High-Performance of GE companies of the U.S.
Applications, 1974,239-252.) by adding a small amount of B and C simultaneously in the B-SiC fine powders of high-purity, using nothing
Sintering process is pressed, the SiC sintered bodies that density is higher than 98% are obtained in 2020 DEG C.And add Al in sintering system2O3-Y2O3、
AIN-R2O3It is referred to as liquid phase burning by forming the method for binary liquid phase eutectic mixture in sintering process Deng sintering aid
Knot.Liquid-phase sintering can sinter to obtain with preferable fracture toughness and bending strength and with complex shape at a lower temperature
Shape and large-sized silicon carbide components.Liquid-phase sintering system, particularly SiC-Al2O3-Y2O3, it has also become carborundum burns in recent years
Tie the focus of research.But the silicon carbide ceramics of liquid-phase sintering is used, a certain amount of oxide has necessarily been retained between its crystal boundary,
The toughness and intensity of silicon carbide ceramics can be greatly lowered in these oxides under higher temperature in use, influence it in extreme ring
Performance under the conditions of border, therefore how to carry out improving its elevated temperature strength as far as possible under conditions of liquid-phase sintering using sintering aid
And tough sexual development high-performance silicon carbide ceramics are important problems.In recent years, sintering parent or carbon are added to using Polycarbosilane
SiClx fiber is directly appended to sinter enhancing silicon carbide ceramics parent in parent and gradually grown up, but these methods are also present
Many problems:
If the 1, Polycarbosilane is added to sintering parent using direct sintering, during can produce gas, be carbonized in parent
The internal stomata that leaves of silicon ceramics reduces the consistency and mechanical performance of ceramic systems;
2nd, Polycarbosilane is added to the silicon carbide fibre formed after sintering parent cracking or is added directly into system
When yardstick itself is small due to having much bigger major diameter compared with parent silicon-carbide particle for silicon carbide fibre, often in parent
More serious reunion is formed in silicon carbide ceramics system, causes the heterogeneity of mechanical property;
3rd, because Polycarbosilane is added to the silicon carbide fibre formed after sintering parent cracking or is added directly into system
In position of the silicon carbide fibre in parent carborundum system do not know, therefore be often difficult to be formed between silicon-carbide particle
" riveting " phenomenon, " crack deflection " mechanism is played, so as to play preferable enhancing effect.
The content of the invention
The present invention proposes a kind of using in-situ carburization silica fibre enhancing liquid phase sintering silicon carbide for existing background technology
Ceramics and manufacture method, it is characterised in that parent silicon-carbide particle is divided into two parts and is surface-treated respectively, wherein one
Divide the competitive adsorption by Polycarbosilane and N- β (aminoethyl) -3- aminopropyltriethoxy dimethoxysilanes so that carborundum
The grain a part of region in surface is covered by long chain macromolecule Polycarbosilane, secures Polycarbosilane strand in silicon-carbide particle
Relative position;Another part silicon-carbide particle is bonded little particle alumina-yttria by VTES and sintered
Auxiliary agent;The cracking of Polycarbosilane strand turns into silicon carbide fibre under 1700 DEG C -1800 DEG C of sintering temperature, by liquefied
Growth in alumina-yttria sintering aid forms " riveting " with other silicon-carbide particles, forms the oxygen in residual crystal boundary
Change the decussating fibers grid in aluminium-yttrium oxide sintering aid and " crack deflection " mechanism increase substantially its high-temperature mechanical property,
And the reunion in liquid-phase sintering is avoided simultaneously, it may draw from the excessive silicon carbide fibre of particle " riveting " and silicon-carbide particle surface
The situation that the space steric effect and causing risen is unfavorable for sintering occurs.
It is this that liquid phase sintering silicon carbide ceramic and manufacture method are strengthened using in-situ carburization silica fibre, it is characterised in that by master
Raw material carborundum powder is wanted two parts of A and B of quality such as to be divided into, by Polycarbosilane, the 1- of A part carborundum 5-10% mass percents
N- β (the aminoethyl) -3- aminopropyltriethoxies dimethoxysilane of 3% mass percent, the toluene of 10-15% mass percents and
A part carborundum mixes, after being sufficiently stirred 30-50 minutes and drying 30-60 minutes at a temperature of 80 DEG C -120 DEG C,
20-40 minutes are calcined in 280 DEG C of -350 DEG C of Muffle furnaces, temperature is then increased to 1100 DEG C -1350 DEG C and continues to calcine 5-15
Furnace cooling obtains material I after hour;By the auxiliary agent of B part carborundum 5-15% mass percents, consisting of 30-70wt%
Al2O3, 28-65wt%Y2O3And 2-5wt% VTESs, ball is mixed in high energy ball mill with B part carborundum
Mill 3-5 hours obtain material II;By material I, material II and material I, material II gross masses 3-5wt% bonding agents in high energy ball
By sieving, being molded after mixing and ball milling 5-10 hours in grinding machine, heated up with 5 DEG C -10 DEG C of programming rate in vacuum carbon tube furnace
To 1700 DEG C -1800 DEG C and it is incubated the silicon carbide ceramics that high intensity, high tenacity is made in 10-20 hours.
Above-mentioned carborundum powder and Al2O3、Y2O3The granularity difference of sintering aid is larger;The particle of main body carborundum
Footpath should be between 0.5-5 microns, Al2O3、Y2O3The particle scale of sintering aid is below 200 nanometers, so as to be advantageous in main body
Silicon carbide powder surface forms fine and close, uniform, thin sintering aid clad.
Above-mentioned bonding agent is one kind in phenolic resin, polyvinyl alcohol.
Above-mentioned shaping is that powder is placed in cylindrical die, in 200-250MPa pressure in high tonnage hydraulic
Lower static pressure is stripped to obtain biscuit for 5 minutes again, and then biscuit is heat-treated 20 minutes at 250 DEG C, removes bonding agent.
Compared with prior art, the advantage of the invention is that:Parent silicon-carbide particle is divided into two parts carry out table respectively
Face is handled, and a portion is inhaled by Polycarbosilane and the competitive of N- β (aminoethyl) -3- aminopropyltriethoxy dimethoxysilanes
It is attached so that a part of region in silicon-carbide particle surface is covered by long chain macromolecule Polycarbosilane, secures Polycarbosilane molecule
Relative position of the chain in silicon-carbide particle;Another part silicon-carbide particle is bonded little particle oxygen by VTES
Change aluminium-yttrium oxide sintering aid;It is fine to turn into carborundum for the cracking of Polycarbosilane strand under 1700 DEG C -1800 DEG C of sintering temperature
Dimension, " riveting " with other silicon-carbide particles is formed by the growth in liquefied alumina-yttria sintering aid, formed
Decussating fibers grid and " crack deflection " mechanism in the alumina-yttria sintering aid of residual crystal boundary increase substantially it
High-temperature mechanical property, and the reunion in liquid-phase sintering is avoided simultaneously, from the excessive carbon of particle " riveting " and silicon-carbide particle surface
SiClx fiber may caused by space steric effect and the causing situation that is unfavorable for sintering occur.Help to obtain high intensity, height
The silicon carbide ceramics of toughness.
Embodiment
The present invention is described in further detail below in conjunction with embodiment.
Embodiment 1:Carborundum powder of the grain diameter between 0.5-5 microns is divided into etc. to two parts of A and B of quality, by A parts
The Polycarbosilane of the mass percent of carborundum 5%, N- β (aminoethyl) -3- aminopropyltriethoxy dimethoxies of 1.1% mass percent
Base silane, the toluene of 11% mass percent and A part carborundum mix, and are sufficiently stirred 30 minutes and at a temperature of 80 DEG C
After drying 35 minutes, calcined in 300 DEG C of Muffle furnaces 20 minutes, temperature is then increased to 1100 DEG C and continues calcining 7 hours
Furnace cooling obtains material I afterwards;By the auxiliary agent of the mass percent of B parts carborundum 6%, consisting of grain diameter is received 200
30wt%Al below rice2O3, 65wt%Y2O3And 5wt% VTESs, with B part carborundum in high-energy ball milling
Mixing and ball milling obtains material II in 3 hours in machine;By material I, material II and material I, the 3wt% polyvinyl alcohol of material II gross masses
Bonding agent in high energy ball mill mixing and ball milling after 5 hours by sieving, powder is fitted into cylindrical die under 200Mpa
Stand 5 minutes and obtain biscuit.Biscuit is heat-treated 20 minutes at 250 DEG C, removes polyvinyl alcohol bonding agent.With 6 DEG C of heating speed
Biscuit is warming up to 1700 DEG C in vacuum carbon tube furnace and is incubated 12 hours silicon carbide ceramics that high intensity, high tenacity is made by degree.
Embodiment 2:Carborundum powder of the grain diameter between 0.5-5 microns is divided into etc. to two parts of A and B of quality, by A parts
The Polycarbosilane of the mass percent of carborundum 7%, N- β (aminoethyl) -3- aminopropyltriethoxy dimethoxys of 2% mass percent
Silane, the toluene of 13% mass percent and A part carborundum mix, and are sufficiently stirred 40 minutes and at a temperature of 100 DEG C
After drying 45 minutes, calcined in 320 DEG C of Muffle furnaces 30 minutes, temperature is then increased to 1200 DEG C and continues calcining 10 hours
Furnace cooling obtains material I afterwards;By the auxiliary agent of the mass percent of B parts carborundum 10%, consisting of grain diameter is received 200
47wt%Al below rice2O3, 50wt%Y2O3And 3wt% VTESs, with B part carborundum in high-energy ball milling
Mixing and ball milling obtains material II in 4 hours in machine;By material I, material II and material I, the 4wt% phenolic resin of material II gross masses
Bonding agent in high energy ball mill mixing and ball milling after 7 hours by sieving, powder is fitted into cylindrical die under 230Mpa
Stand 5 minutes and obtain biscuit.Biscuit is heat-treated 20 minutes at 250 DEG C, removes phenolic resin binder.With 7 DEG C of heating speed
Biscuit is warming up to 1750 DEG C in vacuum carbon tube furnace and is incubated 15 hours silicon carbide ceramics that high intensity, high tenacity is made by degree.
Embodiment 3:Carborundum powder of the grain diameter between 0.5-5 microns is divided into etc. to two parts of A and B of quality, by A parts
The Polycarbosilane of the mass percent of carborundum 10%, N- β (aminoethyl) -3- aminopropyltriethoxy diformazans of 2.8% mass percent
TMOS, the toluene of 15% mass percent and A part carborundum mix, and are sufficiently stirred 50 minutes and in 120 DEG C of temperature
After the lower drying of degree 55 minutes, calcined 40 minutes in 350 DEG C of Muffle furnaces, temperature is then increased to 1350 DEG C and continues calcining 15
Furnace cooling obtains material I after hour;By the auxiliary agent of the mass percent of B parts carborundum 15%, consisting of grain diameter exists
Less than 200 nanometers of 65wt%Al2O3, 33wt%Y2O3And 2wt% VTESs, with B part carborundum in high energy
Mixing and ball milling obtains material II in 5 hours in ball mill;By material I, material II and material I, the poly- second of 5wt% of material II gross masses
Enol bonding agent in high energy ball mill mixing and ball milling after 10 hours by sieving, powder is fitted into cylindrical die
5 minutes, which are stood, under 250Mpa obtains biscuit.Biscuit is heat-treated 20 minutes at 250 DEG C, removes polyvinyl alcohol bonding agent.With 10 DEG C
Programming rate in vacuum carbon tube furnace by biscuit be warming up to 1800 DEG C and be incubated the carbonization that high intensity, high tenacity is made in 20 hours
Silicon ceramics.
Embodiment 4:Carborundum powder of the grain diameter between 0.5-5 microns is divided into etc. to two parts of A and B of quality, by A parts
The Polycarbosilane of the mass percent of carborundum 7%, N- β (aminoethyl) -3- aminopropyltriethoxy dimethoxys of 2% mass percent
Silane, the toluene of 12% mass percent and A part carborundum mix, and are sufficiently stirred 35 minutes and are dried at a temperature of 90 DEG C
After dry 40 minutes, calcined in 300 DEG C of Muffle furnaces 25 minutes, temperature is then increased to 1120 DEG C and continued after calcining 7 hours
Furnace cooling obtains material I;By the auxiliary agent of the mass percent of B parts carborundum 7%, consisting of grain diameter is at 200 nanometers
Following 35wt%Al2O3, 62wt%Y2O3And 3wt% VTESs, with B part carborundum in high energy ball mill
Middle mixing and ball milling obtains material II in 3 hours;By material I, material II and material I, the 3wt% polyvinyl alcohol knots of material II gross masses
Mixture in high energy ball mill mixing and ball milling after 7 hours by sieving, powder is fitted into cylindrical die quiet under 200Mpa
Put 5 minutes and obtain biscuit.Biscuit is heat-treated 20 minutes at 250 DEG C, removes polyvinyl alcohol bonding agent.With 6 DEG C of programming rate
Biscuit is warming up to 1720 DEG C in vacuum carbon tube furnace and is incubated 15 hours silicon carbide ceramics that high intensity, high tenacity is made.
Embodiment 5:Carborundum powder of the grain diameter between 0.5-5 microns is divided into etc. to two parts of A and B of quality, by A parts
The Polycarbosilane of the mass percent of carborundum 8%, N- β (aminoethyl) -3- aminopropyltriethoxy dimethoxies of 1.5% mass percent
Base silane, the toluene of 11% mass percent and A part carborundum mix, and are sufficiently stirred 30 minutes and at a temperature of 90 DEG C
After drying 35 minutes, calcined in 300 DEG C of Muffle furnaces 20 minutes, temperature is then increased to 1200 DEG C and continues calcining 7 hours
Furnace cooling obtains material I afterwards;By the auxiliary agent of the mass percent of B parts carborundum 8%, consisting of grain diameter is received 200
45wt%Al below rice2O3, 50wt%Y2O3And 5wt% VTESs, with B part carborundum in high-energy ball milling
Mixing and ball milling obtains material II in 4 hours in machine;By material I, material II and material I, the 3wt% phenolic resin of material II gross masses
Bonding agent in high energy ball mill mixing and ball milling after 5 hours by sieving, powder is fitted into cylindrical die under 200Mpa
Stand 5 minutes and obtain biscuit.Biscuit is heat-treated 20 minutes at 250 DEG C, removes phenolic resin binder.With 6 DEG C of heating speed
Biscuit is warming up to 1750 DEG C in vacuum carbon tube furnace and is incubated 12 hours silicon carbide ceramics that high intensity, high tenacity is made by degree.