CN108649941B - Novel MOSFET driving circuit - Google Patents
Novel MOSFET driving circuit Download PDFInfo
- Publication number
- CN108649941B CN108649941B CN201810341383.7A CN201810341383A CN108649941B CN 108649941 B CN108649941 B CN 108649941B CN 201810341383 A CN201810341383 A CN 201810341383A CN 108649941 B CN108649941 B CN 108649941B
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- Prior art keywords
- circuit
- capacitor
- driving circuit
- mosfet
- driving
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- 239000003990 capacitor Substances 0.000 claims abstract description 42
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 22
- 230000005669 field effect Effects 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Power Conversion In General (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
- Rectifiers (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a novel MOSFET driving circuit, which comprises a transformer and a rectifying circuit D1, wherein two input ends of the rectifying circuit D1 are respectively connected with two output ends of a secondary coil of the transformer, a resistor R1 and a voltage stabilizing circuit ZD2 are connected in series, a capacitor C1 and a capacitor C2 are connected in series, the capacitor C1 is connected with the resistor R1 in parallel, the capacitor C2 is connected with the voltage stabilizing circuit ZD2 in parallel, the output VCC and the output VEE of the rectifying circuit D1 are respectively connected with the driving circuit and supply power to the driving circuit, one input end of the rectifying circuit D1 is connected with the signal input end of the driving circuit through a driving signal input circuit R2, the signal output end of the driving circuit is connected with a grid level of a MOSFET, and a source electrode of the MOSFET is respectively connected with a circuit between the resistor R1 and the voltage stabilizing circuit ZD2 and a circuit between the capacitor C1 and the capacitor C2; the driving circuit adopts signals and power supply to be provided by the same transformer, has simple circuit and extremely low failure rate, and can ensure that the duty ratio of two MOSFET on the same bridge arm is not limited.
Description
Technical Field
The invention relates to an isolation driving circuit with negative pressure, in particular to a novel MOSFET driving circuit, and belongs to the technical field of MOSFET driving circuits.
Background
The MOSFET is widely applied to a switching power supply, but due to the self-distributed capacitance, when an upper pipe or a lower pipe is turned on or turned off in a bridge circuit, the other pipe on the same bridge arm is easily turned on by mistake, so that the upper pipe and the lower pipe are simultaneously in a conducting state and then fail, and the risk can be greatly reduced when the MOSFET, particularly a silicon carbide SiC MOSFET, is driven with negative voltage; at present, most of driving circuits with negative pressure mainly adopt signal and power supply separation, such as integrated driving circuits of various brands, so that the overall circuit is complex, the failure rate is high, and a signal and power supply integrated mode is adopted in part, but the driving circuits cannot confirm that the negative pressure of one MOSFET on the same bridge arm is established when the other MOSFET is driven, and the duty ratio is 50% even more: about 50% of the working modes are normal.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a novel MOSFET driving circuit, which adopts signals and power supply to be separated, is provided by the same transformer, has simple circuit and extremely low failure rate, and can ensure that the duty ratio of two MOSFETs on the same bridge arm is not limited.
The technical scheme adopted by the invention is as follows:
the utility model provides a novel MOSFET drive circuit, includes transformer, rectifier circuit D1, drive circuit, MOSFET, resistance R1, drive signal input circuit R2, voltage stabilizing circuit ZD2, electric capacity C1 and electric capacity C2, two inputs of rectifier circuit D1 are connected with two outputs of transformer secondary respectively, resistance R1 and voltage stabilizing circuit ZD2 are connected in series, and voltage stabilizing circuit ZD 2's positive pole is connected with rectifier circuit D1's output VEE, voltage stabilizing circuit ZD 2's negative pole is connected with resistance R1's one end, resistance R1's the other end is connected with rectifier circuit D1's output VCC, electric capacity C1 and electric capacity C2 series connection, just electric capacity C1 and resistance R1 parallel connection, electric capacity C2 and voltage stabilizing circuit ZD2 parallel connection, one of them VCC and the output VEE of rectifier circuit D1 are connected and supply power for drive circuit respectively with drive circuit, one of them input of them through drive signal input circuit R2 and drive circuit's signal input connection, drive circuit's signal output terminal and MOSFET's output terminal and the grid are connected with electric capacity C1, between electric capacity C2 and the electric capacity C1 and the electric capacity C2 between the electric capacity C1 and the electric capacity that the grid is connected respectively.
As a further preferred embodiment of the present invention, the rectifier circuit D1 is a one-piece rectifier bridge or is composed of diodes.
As a further preferred aspect of the present invention, the MOSFET is any one of a Si field effect transistor, a SiC field effect transistor, and a GaN field effect transistor.
As a further preferred aspect of the present invention, the voltage of the voltage stabilizing circuit ZD2 is determined by the negative voltage value required by the MOSFET.
As a further preferred aspect of the present invention, the capacitances of the capacitor C1 and the capacitor C2 are determined according to VCC and VEE and the current required by the driving circuit and the period of the input signal, specifically: t×iavg= (0.05×0.1) ×vcc×c1, where T is an input signal period, iavg is an average input operating current of the driving circuit, and C1 is a capacitance of C1; t×iavg= (0.05×0.1) ×vee×c2, where T is the input signal period, iavg is the average input operating current of the driving circuit, and C2 is the capacitance of C2; to ensure that the drive circuit has sufficient power supply during one cycle.
As a further preferred aspect of the present invention, the capacitance of the capacitor C1 and the capacitance of the capacitor C2 are the same or different.
The invention has the beneficial effects that: the driving circuit directly supplies power to the driving circuit through the rectifying circuit by the transformer, and simultaneously provides driving signals for the driving circuit through the driving signal input circuit R2, the driving circuit adopts signals and power supply to be separated, and the driving circuit is provided by the same transformer, so that the driving circuit is simple in circuit and extremely low in failure rate, and the duty ratio of two MOSFETs on the same bridge arm is not limited.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
fig. 2 is a schematic structural diagram of another connection mode of the present invention in practical application.
Detailed Description
The invention is described in detail below with reference to the drawings and examples.
As shown in fig. 1: the embodiment is a novel MOSFET driving circuit, which comprises a transformer, a rectifying circuit D1, a driving circuit, a MOSFET, a resistor R1, a driving signal input circuit R2, a voltage stabilizing circuit ZD2, a capacitor C1 and a capacitor C2, wherein two input ends of the rectifying circuit D1 are respectively connected with two output ends of a secondary coil of the transformer, the resistor R1 and the voltage stabilizing circuit ZD2 are connected in series, the positive electrode of the voltage stabilizing circuit ZD2 is connected with an output VEE of the rectifying circuit D1, the negative electrode of the voltage stabilizing circuit ZD2 is connected with one end of the resistor R1, the other end of the resistor R1 is connected with an output VCC of the rectifying circuit D1, the capacitor C1 and the capacitor C2 are connected in series, the capacitor C1 is connected with the resistor R1 in parallel, the capacitor C2 is connected with the voltage stabilizing circuit ZD2 in parallel, the output VCC and the output VEE of the rectifying circuit D1 are respectively connected with the driving circuit and supply power for the driving circuit, one input end of the rectifying circuit D1 is connected with the signal input end of the driving circuit through the driving signal input end of the driving signal input circuit R2, the signal output end of the driving circuit is connected with the gate of the MOSFET, and the capacitor C1 is respectively connected between the source electrode of the resistor R1 and the capacitor C2.
The rectifying circuit D1 in the present embodiment is an integral rectifying bridge, and may be formed of diodes in practical application.
The MOSFET in this embodiment is a Si field effect transistor, and may be a SiC field effect transistor or a GaN field effect transistor in practical application.
In this embodiment, the voltage of the voltage stabilizing circuit ZD2 is determined by the negative voltage value required by the MOSFET; for example, a transistor of model C3M0065100K uses a voltage of-3.6V.about.4V, i.e., the voltage of the voltage regulator circuit ZD2 is-3.6V.about.4V.about.4V.
In this embodiment, the capacitance of the capacitor C1 and the capacitance of the capacitor C2 are determined according to VCC and VEE, and the current required by the driving circuit and the period of the input signal, specifically: t×iavg= (0.05×0.1) ×vcc×c1, where T is an input signal period, iavg is an average input operating current of the driving circuit, and C1 is a capacitance of C1; t×iavg= (0.05×0.1) ×vee×c2, where T is the input signal period, iavg is the average input operating current of the driving circuit, and C2 is the capacitance of C2; to ensure that the drive circuit has sufficient power supply in one cycle; the value of the capacitor C1 is that the voltage minimum point of VCC is not lower than the requirement of driving the MOSFET, and the value of the capacitor C2 is that the voltage minimum point of VEE is not lower than the requirement of driving the MOSFET; the positive driving current consumes the charge on the capacitor C1, which results in the voltage drop of the capacitor C1, the negative driving current consumes the charge on the capacitor C2, which results in the voltage drop of the capacitor C2, so that a certain capacity is needed to keep the driving voltage from being too low.
As shown in fig. 2, in practical application of the present embodiment, the connection relationship between two MOSFETs is shown, where the source of the first MOSFET is connected to the drain of the second MOSFET.
In the invention, the driving circuit directly supplies power to the driving circuit through the rectifying circuit by the transformer, and simultaneously provides driving signals for the driving circuit through the driving signal input circuit R2, the driving circuit adopts signals and power supply to be separated, and the driving circuit is provided by the same transformer, so that the driving circuit is simple, the failure rate is extremely low, and the duty ratio of two MOSFETs on the same bridge arm is not limited.
The foregoing is merely illustrative of the preferred embodiments of this invention, and it will be appreciated by those skilled in the art that variations and modifications may be made without departing from the principles of this invention, and such variations and modifications are to be regarded as being within the scope of this invention.
Claims (5)
1. A novel MOSFET drive circuit, characterized in that: the device comprises a transformer, a rectifying circuit D1, a driving circuit, a MOSFET, a resistor R1, a driving signal input circuit R2, a voltage stabilizing circuit ZD2, a capacitor C1 and a capacitor C2, wherein two input ends of the rectifying circuit D1 are respectively connected with two output ends of a secondary coil of the transformer, the resistor R1 and the voltage stabilizing circuit ZD2 are connected in series, the positive electrode of the voltage stabilizing circuit ZD2 is connected with an output VEE of the rectifying circuit D1, the negative electrode of the voltage stabilizing circuit ZD2 is connected with one end of the resistor R1, the other end of the resistor R1 is connected with an output VCC of the rectifying circuit D1, the capacitor C1 and the capacitor C2 are connected in series, the capacitor C1 is connected with the resistor R1 in parallel, the capacitor C2 is connected with the voltage stabilizing circuit ZD2 in parallel, the output VCC and the output VEE of the rectifying circuit D1 are respectively connected with the driving circuit and supply power for the driving circuit, one input end of the rectifying circuit D1 is connected with the signal input end of the driving circuit through the driving signal input circuit R2, the signal output end of the driving circuit is connected with the gate of the MOSFET, and the capacitor C1 and the capacitor C2 are respectively connected between the voltage stabilizing circuit and the capacitor C1 and the capacitor C2;
the capacitance of the capacitor C1 and the capacitor C2 is determined according to VCC and VEE and the current required by the driving circuit and the period of the input signal, specifically: t×iavg= (0.05-0.1) ×vcc×c1, where T is an input signal period, iavg is an average input operating current of the driving circuit, and C1 is a capacitance of the capacitor C1; t×iavg= (0.05 to 0.1) ×vee×c2, where T is an input signal period, iavg is an average input operating current of the driving circuit, and C2 is a capacitance of the capacitor C2.
2. The novel MOSFET driving circuit according to claim 1, wherein the rectifying circuit D1 is a one-piece rectifying bridge or is composed of diodes.
3. The novel MOSFET driving circuit of claim 1, wherein said MOSFET is any one of a Si field effect transistor, a SiC field effect transistor, and a GaN field effect transistor.
4. The novel MOSFET driving circuit according to claim 1, wherein the voltage of the voltage stabilizing circuit ZD2 is determined by the negative voltage value required by the MOSFET.
5. The novel MOSFET driving circuit according to claim 1, wherein the capacitance of the capacitor C1 and the capacitance of the capacitor C2 are the same or different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810341383.7A CN108649941B (en) | 2018-04-17 | 2018-04-17 | Novel MOSFET driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810341383.7A CN108649941B (en) | 2018-04-17 | 2018-04-17 | Novel MOSFET driving circuit |
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| Publication Number | Publication Date |
|---|---|
| CN108649941A CN108649941A (en) | 2018-10-12 |
| CN108649941B true CN108649941B (en) | 2023-12-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810341383.7A Active CN108649941B (en) | 2018-04-17 | 2018-04-17 | Novel MOSFET driving circuit |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003259635A (en) * | 2002-02-28 | 2003-09-12 | Sony Corp | Switching power circuit |
| CN102013794A (en) * | 2010-12-16 | 2011-04-13 | 郑州煤矿机械集团股份有限公司 | Intrinsic safety type direct-current solenoid coil throttle control circuit module |
| CN104362873A (en) * | 2014-12-01 | 2015-02-18 | 张光阳 | Efficient non-isolated power source |
| CN104578830A (en) * | 2013-10-23 | 2015-04-29 | 西安造新电子信息科技有限公司 | Throttle control circuit module for intrinsic safety type direct-current electromagnetic coil |
| CN208272947U (en) * | 2018-04-17 | 2018-12-21 | 南京创佳通讯电源设备有限公司 | A kind of Novel MOS FET driving circuit |
-
2018
- 2018-04-17 CN CN201810341383.7A patent/CN108649941B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003259635A (en) * | 2002-02-28 | 2003-09-12 | Sony Corp | Switching power circuit |
| CN102013794A (en) * | 2010-12-16 | 2011-04-13 | 郑州煤矿机械集团股份有限公司 | Intrinsic safety type direct-current solenoid coil throttle control circuit module |
| CN104578830A (en) * | 2013-10-23 | 2015-04-29 | 西安造新电子信息科技有限公司 | Throttle control circuit module for intrinsic safety type direct-current electromagnetic coil |
| CN104362873A (en) * | 2014-12-01 | 2015-02-18 | 张光阳 | Efficient non-isolated power source |
| CN208272947U (en) * | 2018-04-17 | 2018-12-21 | 南京创佳通讯电源设备有限公司 | A kind of Novel MOS FET driving circuit |
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| Publication number | Publication date |
|---|---|
| CN108649941A (en) | 2018-10-12 |
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