CN108649941A - A kind of Novel MOS FET driving circuits - Google Patents
A kind of Novel MOS FET driving circuits Download PDFInfo
- Publication number
- CN108649941A CN108649941A CN201810341383.7A CN201810341383A CN108649941A CN 108649941 A CN108649941 A CN 108649941A CN 201810341383 A CN201810341383 A CN 201810341383A CN 108649941 A CN108649941 A CN 108649941A
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- circuit
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- mosfet
- resistance
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- 230000005669 field effect Effects 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 3
- 238000005457 optimization Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Power Conversion In General (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
- Rectifiers (AREA)
- Amplifiers (AREA)
Abstract
The present invention discloses a kind of Novel MOS FET driving circuits,Including transformer and rectification circuit D1,Two input terminals of rectification circuit D1 are connect with two output ends of transformer secondary coil respectively,Resistance R1 and regulator circuit ZD2 are connected in series with,Capacitance C1 and capacitance C2 are connected in series with,Capacitance C1 is connected in parallel with resistance R1,Capacitance C2 is connected in parallel with regulator circuit ZD2,The output VCC and output VEE of rectification circuit D1 is connect respectively with driving circuit and to drive circuitry,One of rectification circuit D1 input terminals are connected by the signal input part of drive signal input circuit R2 and driving circuit,The signal output end of driving circuit and the grid grade of MOSFET connect,The source electrode of the MOSFET circuit between resistance R1 and regulator circuit ZD2 respectively,Circuit connection between capacitance C1 and capacitance C2；Present invention driver circuit is provided using signal and power supply by same transformer, and circuit is simple, and crash rate is extremely low, and can make the duty ratio of two MOSFET on same bridge arm there is no limit.
Description
Technical field
The present invention relates to a kind of isolated drive circuit with negative pressure more particularly to a kind of Novel MOS FET driving circuits, belong to
In MOSFET driving circuit technical fields.
Background technology
MOSFET is widely used in Switching Power Supply, but due to its own distribution capacity, in bridge circuit,
When by upper tube or down tube on or off, easily leads to another pipe on same bridge arm and mislead, be in simultaneously so as to cause upper down tube
Conducting state, and then break down, when MOSFET, especially silicon carbide SiC MOSFET driving have negative pressure, can greatly it reduce
Above-mentioned risk；Currently, most of driving circuits with negative pressure mainly use signal and for electrically separated, such as integrated drive of each famous brand
Dynamic circuit causes overall circuit complicated, and crash rate is high, also has part using signal and power supply unification mode, but it cannot be true
The negative pressure for recognizing another MOSFET when a MOSFET on same bridge arm is driven has been established, and some even can only be in duty
Than being 50%：50% or so normal work.
Invention content
To solve the deficiencies in the prior art, the present invention provides a kind of Novel MOS FET driving circuits, and driving circuit is using letter
Number and for electrically separated, and provided by same transformer, circuit is simple, and crash rate is extremely low, and can make on same bridge arm
Two MOSFET duty ratio there is no limit.
The technical solution adopted in the present invention is：
A kind of Novel MOS FET driving circuits, including transformer, rectification circuit D1, driving circuit, MOSFET, resistance R1, driving
Signal input circuit R2, regulator circuit ZD2, capacitance C1 and capacitance C2, the rectification circuit D1 two input terminals respectively with change
Two output ends of depressor secondary coil connect, and the resistance R1 and regulator circuit ZD2 are connected in series with, and regulator circuit ZD2
Anode is connect with the output VEE of rectification circuit D1, and the cathode of regulator circuit ZD2 is connect with one end of resistance R1, and resistance R1's is another
One end is connect with the output VCC of rectification circuit D1, and the capacitance C1 and capacitance C2 are connected in series with, and the capacitance C1 and resistance R1
It is connected in parallel, the capacitance C2 and regulator circuit ZD2 is connected in parallel, the output VCC and output VEE difference of the rectification circuit D1
It is connect with driving circuit and to drive circuitry, one of described rectification circuit D1 input terminals is inputted by drive signal
The signal input part of circuit R2 and driving circuit connects, and the signal output end of driving circuit and the grid grade of MOSFET connect,
Circuit of the source electrode of MOSFET respectively between the circuit between resistance R1 and regulator circuit ZD2, capacitance C1 and capacitance C2 is connect.
As present invention further optimization, the rectification circuit D1 is the rectifier bridge of integral type or by diode group
At.
As present invention further optimization, the model of the MOSFET is Si field-effect transistors, SiC field-effects
Any one of transistor or GaN field-effect transistors.
As present invention further optimization, the voltage of the regulator circuit ZD2 is by the negative pressure value needed for MOSFET
To determine.
As present invention further optimization, the capacitance of capacitance C1 and capacitance C2 are according to VCC and VEE and driving electricity
The period of electric current and input signal needed for road determines, specifically：T × Iavg=(0.05~0.1) × VCC × C1, wherein T is
Input signal cycle, Iavg are that driving circuit be averaged input service electric current, C1 for C1 capacitance；T×Iavg=(0.05∼0.1)
× VEE × C2, wherein T is input signal cycle, and Iavg is that driving circuit be averaged input service electric current, C2 for C2 capacitance；
To ensure that driving circuit has sufficient power supply in one cycle.
As present invention further optimization, the capacitance of the capacitance C1 and capacitance C2 are identical or different.
The beneficial effects of the present invention are：Driving circuit is supplied directly to driving circuit by rectification circuit by transformer
Electricity, while passing through drive signal input circuit R2 again and providing drive signal to driving circuit, driving circuit uses signal and power supply
Separation, and provided by same transformer, circuit is simple, and crash rate is extremely low, and can make two on same bridge arm
There is no limit for the duty ratio of MOSFET.
Description of the drawings
Fig. 1 is schematic structural view of the invention；
Fig. 2 is another connection type structural schematic diagram of the present invention in practical application.
Specific implementation mode
Specific introduction is done to the present invention with reference to the accompanying drawings and examples.
As shown in Figure 1：The present embodiment is a kind of Novel MOS FET driving circuits, including transformer, rectification circuit D1, driving
Circuit, MOSFET, resistance R1, drive signal input circuit R2, regulator circuit ZD2, capacitance C1 and capacitance C2, rectification circuit D1's
Two input terminals are connect with two output ends of transformer secondary coil respectively, and resistance R1 and regulator circuit ZD2 are connected in series with, and
The anode of regulator circuit ZD2 is connect with the output VEE of rectification circuit D1, and the cathode of regulator circuit ZD2 connects with one end of resistance R1
Connect, the other end of resistance R1 is connect with the output VCC of rectification circuit D1, and capacitance C1 and capacitance C2 are connected in series with, and capacitance C1 with
Resistance R1 is connected in parallel, and capacitance C2 is connected in parallel with regulator circuit ZD2, the output VCC of rectification circuit D1 and output VEE respectively with
Driving circuit connects and to drive circuitry, and one of rectification circuit D1 input terminals pass through drive signal input circuit R2
It is connect with the signal input part of driving circuit, the signal output end of driving circuit and the grid grade of MOSFET connect, the source of MOSFET
Circuit of the pole respectively between the circuit between resistance R1 and regulator circuit ZD2, capacitance C1 and capacitance C2 is connect.
Rectification circuit D1 in the present embodiment is the rectifier bridge of integral type, in practical application, can also be by diode group
At.
The model of MOSFET in the present embodiment is Si field-effect transistors, in practical application, can also be SiC
Effect transistor or GaN field-effect transistors.
In the present embodiment, the voltage of regulator circuit ZD2 is determined by the negative pressure value needed for MOSFET；Such as model
The voltage of transistor use -3.6V~4V of C3M0065100K, i.e. regulator circuit ZD2 are -3.6V~4V.
In the present embodiment, the capacitance of capacitance C1 and capacitance C2 be according to electric current needed for VCC and VEE and driving circuit and
The period of input signal determines, specifically：T × Iavg=(0.05~0.1) × VCC × C1, wherein T is input signal week
Phase, Iavg are that driving circuit be averaged input service electric current, C1 for C1 capacitance；T × Iavg=(0.05~0.1) × VEE × C2,
Wherein, T is input signal cycle, and Iavg is that driving circuit be averaged input service electric current, C2 for C2 capacitance；To ensure one
Driving circuit has sufficient power supply in a period；The value of capacitance C1 is the voltage minimum point by VCC not less than driving MOSFET
It is required that the value of capacitance C2 is the requirement not less than driving MOSFET by the voltage minimum point of VEE；Forward drive current
The charge on capacitance C1 can be consumed, causes the voltage of capacitance C1 to decline, negative sense driving current can consume the charge on capacitance C2, lead
Send a telegraph and hold the voltage of C2 and decline, so to have certain capacity to keep driving voltage too low, in the present embodiment, capacitance C1 and
The capacitance of capacitance C2 is identical, in practical application, the capacitance of capacitance C1 and capacitance C2 can also be different.
As shown in Fig. 2, be the present embodiment in practical application, two MOSFET connection relation, first MOSFET's
Source electrode is connect with the drain electrode of second MOSFET.
In the present invention, driving circuit is to pass through rectification circuit directly to drive circuitry by transformer, while passing through again
Drive signal input circuit R2 provides drive signal to driving circuit, and driving circuit uses signal and for electrically separated, and by same
Transformer provides, and circuit is simple, and crash rate is extremely low, and the duty ratio of two MOSFET on same bridge arm can be made not have
It is restricted.
The above is only the preferred embodiment of patent of the present invention, it is noted that for the common skill of the art
For art personnel, under the premise of not departing from patent principle of the present invention, several improvements and modifications can also be made, these improve and
Retouching also should be regarded as the protection domain of patent of the present invention.
Claims (6)
1. a kind of Novel MOS FET driving circuits, it is characterised in that：Including transformer, rectification circuit D1, driving circuit,
MOSFET, resistance R1, drive signal input circuit R2, regulator circuit ZD2, capacitance C1 and capacitance C2, the rectification circuit D1's
Two input terminals are connect with two output ends of transformer secondary coil respectively, and the resistance R1 and regulator circuit ZD2 series connection connect
It connects, and the anode of regulator circuit ZD2 is connect with the output VEE of rectification circuit D1, the cathode of regulator circuit ZD2 and the one of resistance R1
End connection, the other end of resistance R1 are connect with the output VCC of rectification circuit D1, and the capacitance C1 and capacitance C2 are connected in series with, and
The capacitance C1 and resistance R1 is connected in parallel, and the capacitance C2 and regulator circuit ZD2 is connected in parallel, and the rectification circuit D1's is defeated
Go out VCC and output VEE to connect with driving circuit respectively and to drive circuitry, one of described rectification circuit D1 inputs
End is connected by the signal input part of drive signal input circuit R2 and driving circuit, the signal output end of driving circuit with
The grid grade of MOSFET connects, the source electrode of the MOSFET circuit between resistance R1 and regulator circuit ZD2, capacitance C1 and capacitance respectively
Circuit connection between C2.
2. a kind of Novel MOS FET driving circuits according to claim 1, which is characterized in that the rectification circuit D1 is
The rectifier bridge of integral type is constituted by a diode.
3. a kind of Novel MOS FET driving circuits according to claim 1, which is characterized in that the type of the MOSFET
Number it is any one of Si field-effect transistors, SiC field-effect transistors or GaN field-effect transistors.
4. a kind of Novel MOS FET driving circuits according to claim 1, which is characterized in that the regulator circuit ZD2
Voltage be to be determined by the negative pressure value needed for MOSFET.
5. a kind of Novel MOS FET driving circuits according to claim 1, which is characterized in that the electricity of capacitance C1 and capacitance C2
Capacity was determined according to the period of electric current and input signal needed for VCC and VEE and driving circuit, specifically：T×Iavg=
(0.05~0.1) × VCC × C1, wherein T is input signal cycle, and Iavg is that driving circuit is averaged input service electric current, and C1 is
The capacitance of C1；T × Iavg=(0.05~0.1) × VEE × C2, wherein T is input signal cycle, and Iavg is flat for driving circuit
Equal input service electric current, C2 are the capacitance of C2.
6. a kind of Novel MOS FET driving circuits according to claim 5, which is characterized in that the capacitance C1 and capacitance
The capacitance of C2 is identical or different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810341383.7A CN108649941B (en) | 2018-04-17 | 2018-04-17 | Novel MOSFET driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810341383.7A CN108649941B (en) | 2018-04-17 | 2018-04-17 | Novel MOSFET driving circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108649941A true CN108649941A (en) | 2018-10-12 |
| CN108649941B CN108649941B (en) | 2023-12-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810341383.7A Active CN108649941B (en) | 2018-04-17 | 2018-04-17 | Novel MOSFET driving circuit |
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| Country | Link |
|---|---|
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003259635A (en) * | 2002-02-28 | 2003-09-12 | Sony Corp | Switching power circuit |
| CN102013794A (en) * | 2010-12-16 | 2011-04-13 | 郑州煤矿机械集团股份有限公司 | Intrinsic safety type direct-current solenoid coil throttle control circuit module |
| CN104362873A (en) * | 2014-12-01 | 2015-02-18 | 张光阳 | Efficient non-isolated power source |
| CN104578830A (en) * | 2013-10-23 | 2015-04-29 | 西安造新电子信息科技有限公司 | Throttle control circuit module for intrinsic safety type direct-current electromagnetic coil |
| CN208272947U (en) * | 2018-04-17 | 2018-12-21 | 南京创佳通讯电源设备有限公司 | A kind of Novel MOS FET driving circuit |
-
2018
- 2018-04-17 CN CN201810341383.7A patent/CN108649941B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003259635A (en) * | 2002-02-28 | 2003-09-12 | Sony Corp | Switching power circuit |
| CN102013794A (en) * | 2010-12-16 | 2011-04-13 | 郑州煤矿机械集团股份有限公司 | Intrinsic safety type direct-current solenoid coil throttle control circuit module |
| CN104578830A (en) * | 2013-10-23 | 2015-04-29 | 西安造新电子信息科技有限公司 | Throttle control circuit module for intrinsic safety type direct-current electromagnetic coil |
| CN104362873A (en) * | 2014-12-01 | 2015-02-18 | 张光阳 | Efficient non-isolated power source |
| CN208272947U (en) * | 2018-04-17 | 2018-12-21 | 南京创佳通讯电源设备有限公司 | A kind of Novel MOS FET driving circuit |
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| Publication number | Publication date |
|---|---|
| CN108649941B (en) | 2023-12-12 |
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