CN108646843A - Band-gap circuit and electronic equipment - Google Patents
Band-gap circuit and electronic equipment Download PDFInfo
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- CN108646843A CN108646843A CN201810884570.XA CN201810884570A CN108646843A CN 108646843 A CN108646843 A CN 108646843A CN 201810884570 A CN201810884570 A CN 201810884570A CN 108646843 A CN108646843 A CN 108646843A
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- resistor
- gap circuit
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- 230000005611 electricity Effects 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 33
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
Abstract
This disclosure relates to which band-gap circuit and electronic equipment, band-gap circuit include：Operational amplifier, including positive input, reverse input end and output end, output end are used for output reference voltage；First resistor, second resistance, 3rd resistor and the 4th resistance, one end of first resistor and one end of second resistance are electrically connected to output end, the other end of second resistance is electrically connected to one end of 3rd resistor and the reverse input end, and one end of the 4th resistance is electrically connected to the other end of first resistor and the positive input；The first transistor and second transistor, the first transistor includes first end, second end and third end, second transistor includes the 4th end, the 5th end and the 6th end, second end, third end, the 5th end and the 6th end ground connection, first end is electrically connected to the other end of 3rd resistor, and the 4th end is electrically connected to the other end of the 4th resistance.The operating voltage range for the band-gap circuit that the disclosure proposes is wide, considerably increases the applicable scene of band-gap circuit.
Description
Technical field
This disclosure relates to technical field of integrated circuits more particularly to a kind of band-gap circuit and electronic equipment.
Background technology
For micro-control unit (Microcontroller Unit；MCU application field), according to different clients application,
It is also higher and higher to the voltage range requirement of chip operation, such as the lower electricity of voltage is changed to by original direct current 5V power supply power supplies
Pond powers, binodal battery originally, is changed to single battery power supply etc., the operating voltage of the chip substantially reduced, it is desirable that chip exists
It can be worked normally under wider array of voltage.Under traditional 5V process conditions, due to metal-oxide-semiconductor (metal oxide
Semiconductor) threshold voltage is higher, and traditional band gap is generally operational in 2V~5.5V, realizes the band gap of 1.5V~5.5V
There are larger challenges.
Invention content
In view of this, a kind of band-gap circuit of disclosure proposition and electronic equipment, to widen operating voltage range.
According to the one side of the disclosure, a kind of band-gap circuit is provided, the band-gap circuit includes：
Operational amplifier, including positive input, reverse input end and output end, the output end is for output reference electricity
Pressure；
First resistor, second resistance, 3rd resistor and the 4th resistance, one end of the first resistor and the one of second resistance
End is electrically connected to the output end, and the other end of the second resistance is electrically connected to one end of the 3rd resistor and described reversed
One end of input terminal, the 4th resistance is electrically connected to the other end of the first resistor and the positive input；
The first transistor and second transistor, the first transistor include first end, second end and third end, and described
Two-transistor includes the 4th end, the 5th end and the 6th end, the second end, the third end, the 5th end and the described 6th
End ground connection, the first end are electrically connected to the other end of the 3rd resistor, and the 4th end is electrically connected to the 4th resistance
The other end.
In a kind of possible embodiment, the operational amplifier further includes：
First NMOS tube is connected to the positive input；
Second NMOS tube is connected to the reverse input end.
In a kind of possible embodiment, the first transistor and the second transistor are triode, described the
One end, the second end, the third end are respectively emitter, base stage and the collector of the first transistor, and the described 4th
End, the 5th end and the 6th end are respectively emitter, base stage and the collector of the second transistor.
In a kind of possible embodiment, the emitter area of the first transistor is the hair of the second transistor
N times of emitter area, wherein N is the integer more than 1.
In a kind of possible embodiment, the 3rd resistor may include the 6th resistance being connected in series with and the 7th electricity
Resistance.
In a kind of possible embodiment, the reference voltage be according to the first resistor, the 4th resistance and
What the resistance value of the 7th resistance determined.
In a kind of possible embodiment, the reference voltage is determined by following formula：
VREF=VEB1+(VT* ln (N)) * (R1+R4)/R7,
Wherein, VEB1For the emitter of the second transistor and the conducting voltage of base stage, VT=KT/q, K are Boltzmanns
Constant, T are kelvin degree, and q is the quantity of electric charge of electronics, V under room temperatureTIt is the first transistor and described second for 26mV, N
The ratio of the emitter area of transistor, R1 indicate that the resistance value of the first resistor, R4 indicate the resistance of the 4th resistance
Value, R7 indicate the resistance value of the 7th resistance.
According to another aspect of the present disclosure, it is proposed that a kind of electronic equipment, the electronic equipment include：
The band-gap circuit, the band-gap circuit are used to provide reference voltage for the component of the electronic equipment.
The minimum operating voltage for the band-gap circuit that the disclosure proposes is low, and operating voltage range is wide, considerably increases band gap electricity
The applicable scene on road.
According to below with reference to the accompanying drawings to detailed description of illustrative embodiments, the other feature and aspect of the disclosure will become
It is clear.
Description of the drawings
Including in the description and the attached drawing of a part for constitution instruction and specification together illustrate the disclosure
Exemplary embodiment, feature and aspect, and for explaining the principles of this disclosure.
Fig. 1 shows the electrical block diagram of the band-gap circuit according to one embodiment of the disclosure.
Fig. 2 shows the electrical block diagrams according to the band-gap circuit of the disclosure one embodiment.
Fig. 3 shows the structural schematic diagram of the operational amplifier amp in the band-gap circuit according to one embodiment of the disclosure.
Specific implementation mode
Various exemplary embodiments, feature and the aspect of the disclosure are described in detail below with reference to attached drawing.It is identical in attached drawing
Reference numeral indicate functionally the same or similar element.Although the various aspects of embodiment are shown in the accompanying drawings, remove
It non-specifically points out, it is not necessary to attached drawing drawn to scale.
Dedicated word " exemplary " means " being used as example, embodiment or illustrative " herein.Here as " exemplary "
Illustrated any embodiment should not necessarily be construed as preferred or advantageous over other embodiments.
In addition, in order to better illustrate the disclosure, numerous details is given in specific implementation mode below.
It will be appreciated by those skilled in the art that without certain details, the disclosure can equally be implemented.In some instances, for
Method, means, element and circuit well known to those skilled in the art are not described in detail, in order to highlight the purport of the disclosure.
The wider array of output voltage of range in order to obtain, can be with bandgap engineered circuit so that the operating voltage of band-gap circuit is more
It is low, to achieve the purpose that increase band-gap circuit operating voltage range.
In view of the above problems, the disclosure proposes a kind of band-gap circuit, to reduce operating voltage.
Referring to Fig. 1, Fig. 1 shows the electrical block diagram of the band-gap circuit according to one embodiment of the disclosure.
As shown in Figure 1, the band-gap circuit includes operational amplifier amp, multiple resistance and multiple transistors.
Operational amplifier amp, including positive input VP, reverse input end VNAnd output end VREF, the output end VREFWith
In output reference voltage.
The multiple resistance may include first resistor R1, second resistance R2,3rd resistor R3 and the 4th resistance R4, described
One end of first resistor R1 and one end of second resistance R2 are electrically connected to the output end VREF, the second resistance R2's is another
End is electrically connected to one end of the 3rd resistor R3 and the reverse input end VN, one end of the 4th resistance R4 is electrically connected to
The other end of the first resistor R1 and the positive input VP。
The multiple transistor includes the first transistor Q1 and second transistor Q2, the first transistor Q1 include first
End, second end and third end, the second transistor Q2 include the 4th end, the 5th end and the 6th end, the second end, described the
Three ends, the 5th end and the 6th end are grounded VSS, the first end is electrically connected to the other end of the 3rd resistor R3, institute
State the other end that the 4th end is electrically connected to the 4th resistance R4.
The minimum operating voltage for the band-gap circuit that the disclosure proposes is low, and operating voltage range is wide, considerably increases band gap electricity
The applicable scene on road.
Referring to Fig. 2, Fig. 2 shows the electrical block diagrams according to the band-gap circuit of the disclosure one embodiment.
As shown in Fig. 2, the band-gap circuit includes operational amplifier amp, multiple resistance and multiple transistors.
Operational amplifier amp, including positive input VP, reverse input end VNAnd output end VREF, the output end VREFWith
In output reference voltage.
The operational amplifier amp in the band-gap circuit according to one embodiment of the disclosure is shown also referring to Fig. 3, Fig. 3
Structural schematic diagram.
In a kind of possible embodiment, operational amplifier amp may include metal-oxide-semiconductor M0, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2,
Metal-oxide-semiconductor M3, metal-oxide-semiconductor M4.
In the present embodiment, metal-oxide-semiconductor M0, metal-oxide-semiconductor M1 and metal-oxide-semiconductor M2 can be NMOS tube, and the grid of metal-oxide-semiconductor M1 is connected to
The positive input VP, the grid of metal-oxide-semiconductor M2 is connected to the reverse input end VN, the source electrode of metal-oxide-semiconductor M1 and metal-oxide-semiconductor M2 connects
It is connected to the drain electrode of metal-oxide-semiconductor M0, the grid of metal-oxide-semiconductor M0 is connected to bias voltage BIAS, the source electrode ground connection of metal-oxide-semiconductor M0.
Metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 can be PMOS tube, and the source electrode of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 are connected to input power VDD, MOS
The grid of pipe M3 is connected to grid and the drain electrode of metal-oxide-semiconductor M4, and the drain electrode of metal-oxide-semiconductor M4 is connected to the drain electrode of metal-oxide-semiconductor M1, metal-oxide-semiconductor M3
Drain electrode and metal-oxide-semiconductor M2 drain electrode be connected as output OUT, in a kind of possible embodiment, can from output OUT output
The reference voltage VREF。
Wherein, metal-oxide-semiconductor is that metal (metal)-oxide (oxide)-semiconductor (semiconductor) field-effect is brilliant
Body pipe or metal-insulator (insulator)-semiconductor field effect transistor.The source electrode and drain electrode of metal-oxide-semiconductor is can
With what is exchanged, in most cases, this area Liang Ge is the same, and the performance of device will not be influenced both ends are exchanged.Its
In, NMOS tube (N-Metal-Oxide-Semiconductor) is mainly by electronic conduction, PMOS tube (positive channel
Metal Oxide Semiconductor) mainly by hole conduction.
The disclosure is NMOS tube by two the input pipes M1 and M2 that operational amplifier is arranged, and can effectively reduce operation and put
The operating voltage of big device, to reduce the operating voltage of band-gap circuit.
The multiple resistance may include first resistor R1, second resistance R2, the 4th resistance R4, the 6th resistance R6 and the 7th
Resistance R7, one end of the first resistor R1 and one end of second resistance R2 are electrically connected to the output end VREF, second electricity
The other end of resistance R2 is electrically connected to one end of the 6th resistance R6 and the reverse input end VN, the 6th resistance R6's is another
One end is electrically connected to one end of the 7th resistance R7, and one end of the 4th resistance R4 is electrically connected to the another of the first resistor R1
End and the positive input VP。
It should be noted that band-gap circuit shown in Fig. 2 is with band-gap circuit shown in Fig. 1, difference lies in thirds described in Fig. 1
The 6th resistance R6 and the 7th resistance R7 that resistance R3 is connected in series in Fig. 2 are substituted.That is, 3rd resistor R3 can be by equivalent more
A resistance substitutes.It should be noted that R3 and other resistance can be substituted by series resistance network or parallel resistance network, this
It sentences and illustrates for concatenated 6th resistance R6 and the 7th resistance R7, the disclosure is not limited with this.It should be noted that
The prior art also has uses NMOS as input pipe in operational amplifier, however electric when the operational amplifier is applied to band gap
Lu Shi, the prior art require the NMOS as input pipe to have lower threshold voltage, and this greatly limits band-gap circuits
Working environment.The disclosure raises V by resistance R4 and resistance R6NAnd VPVoltage so that the NMOS device of high threshold voltage also may be used
To use, to widen the working environment of band-gap circuit.
The multiple transistor includes the first transistor Q1 and second transistor Q2, the first transistor Q1 include first
End, second end and third end, the second transistor Q2 include the 4th end, the 5th end and the 6th end, the second end, described the
Three ends, the 5th end and the 6th end are grounded VSS, the first end is electrically connected to the other end of the 7th resistance R7, institute
State the other end that the 4th end is electrically connected to the 4th resistance R4.
In a kind of possible embodiment, the first transistor Q1 and the second transistor Q2 can be triode,
Such as the first transistor Q1 and second transistor Q2 can be PNP triode.
In the present embodiment, the first end, the second end, the third end are respectively the first transistor
Emitter, base stage and collector, the 4th end, the 5th end and the 6th end are respectively the hair of the second transistor
Emitter-base bandgap grading, base stage and collector.
In a kind of possible embodiment, the emitter area (M) of the first transistor Q1 can be described second
N times of the emitter area (M) of transistor Q2, wherein N is the integer more than 1.That is, the first transistor Q1 and the second crystal
Pipe Q2 may include multiple triodes, wherein the transistor size ratio of the first transistor Q1 and second transistor Q2 is N：1.
In a kind of possible embodiment, the reference voltage of operational amplifier amp outputs can be according to first electricity
Hinder the resistance value determination of R1, the 4th resistance R4 and the 7th resistance R7.
In a kind of possible embodiment, the reference voltage is determined by following formula：
VREF=VEB1+(VT* ln (N)) * (R1+R4)/R7,
Wherein, VEB1For the emitter of the second transistor and the conducting voltage of base stage, VT=KT/q, K are Boltzmanns
Constant, T are kelvin degree, and q is the quantity of electric charge of electronics, V under room temperatureTIt is the first transistor and described second for 26mV, N
The ratio of the emitter area of transistor, R1 indicate that the resistance value of the first resistor, R4 indicate the resistance of the 4th resistance
Value, R7 indicate the resistance value of the 7th resistance.
In the present embodiment, the reference voltage V of operational amplifier output can be obtained in the following wayREF：
Voltage V may be implemented in operational amplifier ampPWith voltage VNIt is equal, i.e. VP=VN。
Wherein VN=I0*(R6+R7)+VEB0, VP=I1*R4+VEB1, so I0*(R6+R7)+VEB0=I1*R4+VEB1,
In, VEB0For the emitter of the second transistor and the conducting voltage of base stage, VEB1For the second transistor emitter and
The conducting voltage of base stage.
Due to voltage VP=voltage VN, first resistor R1=second resistance R2, and first resistor R1 and second resistance R2
Upper terminal voltage is equal to VREF, so electric current I0=electric current I1, simultaneously because the 6th resistance R6 of the 4th resistance R4=, so electric current I1
=I0=(VEB1-VEB0)/R7,
The current formula of triode：
Wherein, ISSIt is the saturation current of bipolar transistor：VT=kT/q, k are Boltzmann constant, and q is electron charge,
T is kelvin degree, and I is the electric current for flowing through transistor collector, VEBIt is the voltage between transistor emitter and base stage,
Voltage V can be obtained according to the current formula of triodeEB：
It can be by VEB=VT*ln(I/ISS) bring I into1=I0=(VEB1-VEB0)/R7：
Cause
For the area Q1 of the first transistor Q1 and the emitter of second transistor Q2：Q2=N：1, and electricity
Flow I1=electric current I0, so flowing through the electric current ratio of the emitter of the first transistor Q1 and second transistor Q2
IQ1：IQ2=1：N, therefore,
In the present embodiment, the reference voltage of operational amplifier amp outputs is：
VREF=VEB1+I1* (R1+R4),
By electric current I1Bring voltage V intoREF=VEB1+I1* in (R1+R4), V can be obtainedEB1+(VT*ln(n))*(R1+R4)/R7。
As the above analysis, in the band-gap circuit that the disclosure proposes, the reference voltage of operational amplifier amp output it is big
It is small to be determined by first resistor R1, the 4th resistance R4 and the 7th resistance R7, as change first resistor R1, the 4th resistance R4 and the 7th
When the resistance value of resistance R7, the reference voltage of operational amplifier amp outputs also accordingly changes.
From the above analysis it can also be seen that the reference voltage for the band-gap circuit output that the disclosure proposes is a stationary value.
In the present embodiment, the minimum operating voltage of band-gap circuit is | VTHP|+3VDSSAT, about 1.3V, wherein VTHP
Refer to the turn-on threshold voltage of PMOS tube, is negative value, so using | VTHP| the size of expression value, according to present technique | VTHP|
=0.85V；VDSSATIt is different for different process value for overdrive voltage, 0.15V is generally taken for 5V techniques.
It can be seen that the band-gap circuit that the disclosure proposes can work at lower voltages, power supply is greatly increased
Working range.
In a kind of possible embodiment, above-mentioned band-gap circuit can be applied in electronic equipment, with for the electricity
Sub- equipment provides reference voltage.
For example, the band-gap circuit that the disclosure proposes can be applied to D/A converter (D/A), A/D converter
(A/D), in memory and Switching Power Supply lamp Digital Analog Hybrid Circuits system.
The band-gap circuit proposed using the disclosure, electronic equipment can obtain the benchmark that stability is high, noise resisting ability is strong
Voltage.The electronic equipment that the disclosure provides, thus there is preferable system accuracy.
The presently disclosed embodiments is described above, above description is exemplary, and non-exclusive, and
It is not limited to disclosed each embodiment.Without departing from the scope and spirit of illustrated each embodiment, for this skill
Many modifications and changes will be apparent from for the those of ordinary skill in art field.The selection of term used herein, purport
In principle, the practical application or to the technological improvement in market for best explaining each embodiment, or make the art its
Its those of ordinary skill can understand each embodiment disclosed herein.
Claims (8)
1. a kind of band-gap circuit, which is characterized in that the band-gap circuit includes：
Operational amplifier, including positive input, reverse input end and output end, the output end are used for output reference voltage；
First resistor, second resistance, 3rd resistor and the 4th resistance, one end of the first resistor and one end electricity of second resistance
It is connected to the output end, the other end of the second resistance is electrically connected to one end of the 3rd resistor and the reversed input
End, one end of the 4th resistance is electrically connected to the other end of the first resistor and the positive input；
The first transistor and second transistor, the first transistor include first end, second end and third end, and described second is brilliant
Body pipe includes the 4th end, the 5th end and the 6th end, the second end, the third end, the 5th end and the 6th termination
Ground, the first end are electrically connected to the other end of the 3rd resistor, and the 4th end is electrically connected to the another of the 4th resistance
One end.
2. band-gap circuit according to claim 1, which is characterized in that the operational amplifier further includes：
First NMOS tube is connected to the positive input；
Second NMOS tube is connected to the reverse input end.
3. band-gap circuit according to claim 1, which is characterized in that the first transistor and the second transistor are
Triode, the first end, the second end, the third end are respectively emitter, base stage and the collection of the first transistor
Electrode, the 4th end, the 5th end and the 6th end are respectively emitter, base stage and the current collection of the second transistor
Pole.
4. band-gap circuit according to claim 3, which is characterized in that the emitter area of the first transistor is described
N times of the emitter area of second transistor, wherein N is the integer more than 1.
5. band-gap circuit according to claim 1, which is characterized in that the 3rd resistor may include the 6th be connected in series with
Resistance and the 7th resistance.
6. band-gap circuit according to claim 5, which is characterized in that the reference voltage be according to the first resistor,
What the resistance value of the 4th resistance and the 7th resistance determined.
7. band-gap circuit according to claim 6, which is characterized in that determine the reference voltage by following formula：
VREF=VEB1+(VT* ln (N)) * (R1+R4)/R7,
Wherein, VEB1For the emitter of the second transistor and the conducting voltage of base stage, VT=KT/q, K are Boltzmann constants,
T is kelvin degree, and q is the quantity of electric charge of electronics, V under room temperatureTIt is the first transistor and second crystal for 26mV, N
The ratio of the emitter area of pipe, R1 indicate that the resistance value of the first resistor, R4 indicate the resistance value of the 4th resistance, R7
Indicate the resistance value of the 7th resistance.
8. a kind of electronic equipment, which is characterized in that the electronic equipment includes：
Any one of the claim 1-7 band-gap circuits, the band-gap circuit for the component of the electronic equipment for providing
Reference voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810884570.XA CN108646843A (en) | 2018-08-06 | 2018-08-06 | Band-gap circuit and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810884570.XA CN108646843A (en) | 2018-08-06 | 2018-08-06 | Band-gap circuit and electronic equipment |
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Family
ID=63760834
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114815951A (en) * | 2022-06-30 | 2022-07-29 | 苏州贝克微电子股份有限公司 | Circuit structure capable of reducing temperature influence |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1732419A (en) * | 2002-12-27 | 2006-02-08 | 模拟装置公司 | CMOS voltage bandgap reference with improved headroom |
| CN101540586A (en) * | 2008-03-20 | 2009-09-23 | 联发科技股份有限公司 | Operational amplifier, temperature-dependent system and bandgap reference circuit |
| CN106843351A (en) * | 2016-12-30 | 2017-06-13 | 合肥恒烁半导体有限公司 | Adjustable voltage produces circuit |
| CN107608440A (en) * | 2017-10-25 | 2018-01-19 | 北京智芯微电子科技有限公司 | A kind of Fiducial reference source circuit with gap |
| CN208636736U (en) * | 2018-08-06 | 2019-03-22 | 上海晟矽微电子股份有限公司 | Band-gap circuit and electronic equipment |
-
2018
- 2018-08-06 CN CN201810884570.XA patent/CN108646843A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1732419A (en) * | 2002-12-27 | 2006-02-08 | 模拟装置公司 | CMOS voltage bandgap reference with improved headroom |
| CN101540586A (en) * | 2008-03-20 | 2009-09-23 | 联发科技股份有限公司 | Operational amplifier, temperature-dependent system and bandgap reference circuit |
| CN106843351A (en) * | 2016-12-30 | 2017-06-13 | 合肥恒烁半导体有限公司 | Adjustable voltage produces circuit |
| CN107608440A (en) * | 2017-10-25 | 2018-01-19 | 北京智芯微电子科技有限公司 | A kind of Fiducial reference source circuit with gap |
| CN208636736U (en) * | 2018-08-06 | 2019-03-22 | 上海晟矽微电子股份有限公司 | Band-gap circuit and electronic equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114815951A (en) * | 2022-06-30 | 2022-07-29 | 苏州贝克微电子股份有限公司 | Circuit structure capable of reducing temperature influence |
| CN114815951B (en) * | 2022-06-30 | 2022-10-04 | 苏州贝克微电子股份有限公司 | Circuit structure capable of reducing temperature influence |
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