CN108630613A - Seal ring structure and preparation method thereof, chip structure - Google Patents
Seal ring structure and preparation method thereof, chip structure Download PDFInfo
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- CN108630613A CN108630613A CN201710165608.3A CN201710165608A CN108630613A CN 108630613 A CN108630613 A CN 108630613A CN 201710165608 A CN201710165608 A CN 201710165608A CN 108630613 A CN108630613 A CN 108630613A
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- Prior art keywords
- seal ring
- ring structure
- groove
- metal
- production method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
Abstract
The invention discloses a kind of seal ring structure and preparation method thereof, chip structure, the seal ring structure is located in a substrate, including at least two circle metal wires and at least one buffer part, is interconnected with one another by the buffer part between the metal wire.The area of the seal ring structure is expanded by the buffer part structure, accordingly, forming the seal ring structure only needs the design for changing the mask plate being exposed to the passivation layer that can realize that the production method is simple, and the seal ring structure performance formed is good.Also, the seal ring structure and the bonding force of understructure can be enhanced using the chip structure of above-mentioned seal ring structure, can effectively reduce its risk for occurring peeling off in chip structure in follow-up process, be conducive to protect chip structure.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of seal ring structure and preparation method thereof, chip structure.
Background technology
In semiconductor chip fabrication, chip periphery needs to make chip interior protect by sealing ring (seal ring) structure
Hold sealing state.Seal ring structure is trapped among the periphery of chip, and seal ring structure can make chip interior be protected from external environment
Influence, prevent chip rupture, it is ensured that the performance long-time stable of semiconductor chip.In addition, seal ring structure can also be into one
Step protection chip interior is protected from deterioration caused by moisture, since the dielectric layer of chip interior is generally by porous low dielectric constant
Material is formed, and moisture can permeate dielectric layer with low dielectric constant easily and reach integrated circuit, and seal ring structure is then formed by metal,
It has blocked moisture infiltration approach, and can substantially exclude any moisture infiltration.
However, in the prior art, in Subsequent semiconductor chip package process, it is existing usually to will appear peeling in chip structure
As.Main cause is：Baking processing procedure can be carried out to the chip structure with seal ring structure, in packaging technology in baking processing procedure
In, since the protective layer (Polyimide) of outside is heated and can bring huge stress to chip structure, seal ring structure can be torn
And the passivation layer (Passivation Film) between seal ring structure, so as to cause chip failure.
Therefore it provides a kind of new seal ring structure and preparation method thereof, chip structure must to solve the above problems real category
It wants.
Invention content
Technical problem to be solved by the invention is to provide a kind of seal ring structure and preparation method thereof, chip structures, expand
The area of big seal ring structure, increases the complexity of seal ring structure, enhances seal ring structure and understructure in chip structure
Bonding force, prevent chip from being failed by peeling.
To solve above-mentioned technical problem and relevant issues, seal ring structure provided by the invention are located in a substrate, including
At least two enclose metal wires and at least one buffer part, are interconnected with one another by the buffer part between the metal wire.
Optionally, it in the seal ring structure, is connected by a buffer part between the adjacent metal wire,
The buffer part is the first metal strip of S-shaped setting.
Optionally, it in the seal ring structure, is connected by a buffer part between all metal wires,
The buffer part is the second metal strip of S-shaped setting.
Optionally, in the seal ring structure, the buffer part includes several third metal strips.
Optionally, in the seal ring structure, every third metal strip and the metal wire are at an acute angle or blunt
Angle is connected.
Optionally, in the seal ring structure, several third metal strips are arranged in parallel.
Further, the seal ring structure further includes pseudo- seal ring structure, and the puppet seal ring structure is located at outmost turns
Metal wire outside.
Optionally, in the seal ring structure, the metal wire of at least partly described pseudo- seal ring structure and outmost turns
It is connected.
Optionally, in the seal ring structure, the puppet seal ring structure includes several mutually independent metals
Block.
Optionally, in the seal ring structure, the metal derby is crux.
According to another aspect of the present invention, the present invention also provides a kind of production method of seal ring structure, the making
Method includes：
A passivation layer is formed in the upper surface of a substrate；
Selective etch is carried out to the passivation layer, being formed in the passivation layer has at least two grooves and at least one
The pattern of a buffer groove is connected by the buffer groove between the groove；
Metal is filled in the groove and buffer groove, forms a seal ring structure, and the seal ring structure is included in
The buffer part in metal wire and the buffer groove in the groove.
Optionally, described slow by one between the adjacent groove in the production method of the seal ring structure
Groove connection is rushed, the buffer groove is the first opening of S-shaped setting.
Optionally, described slow by one between all grooves in the production method of the seal ring structure
Groove connection is rushed, the buffer groove is the second opening of S-shaped setting.
Optionally, in the production method of the seal ring structure, the buffer groove includes several thirds opening.
Optionally, in the production method of the seal ring structure, each third opening is with the groove in sharp
Angle or obtuse angle are connected.
Optionally, in the production method of the seal ring structure, several described third opening parallel arrangements.
Optionally, in the production method of the seal ring structure, the metal is aluminum metal.
Further, in the production method of the seal ring structure, the substrate includes the circuit region of inside and outer
The Cutting Road area of side；The pattern of the groove and buffer groove is formed in the passivation layer on the circuit region.
Further, to the passivation layer carry out selective etch the step of in, further include the Cutting Road area it
On passivation layer in form the pattern of pseudo- groove；In the groove and buffer groove fill metal the step of in, further include
The metal is filled in the puppet groove, forms a pseudo- seal ring structure.
Optionally, in the production method of the seal ring structure, at least partly described pseudo- groove and outmost turns it is recessed
Slot is connected.
Optionally, in the production method of the seal ring structure, the puppet groove includes that several are mutually independent
4th opening.
Optionally, in the production method of the seal ring structure, the 4th opening is in crux.
In addition, according to another aspect of the invention, the present invention also provides a kind of chip structures, including：
One substrate, the substrate include the circuit region of inside and the Cutting Road area in outside；
One passivation layer and the seal ring structure on the circuit region, the seal ring structure are sealing described above
Ring structure, the passivation layer and seal ring structure cover the substrate, and the seal ring structure is embedded in the passivation layer.
Optionally, in the chip structure, the seal ring structure further includes pseudo- seal ring structure, the pseudo- sealing
Ring structure is located at the outside of the metal wire of outmost turns, and the pseudo- seal ring structure is located in the Cutting Road area.
Optionally, in the chip structure, the metal wire phase of at least partly described pseudo- seal ring structure and outmost turns
Connection.
Optionally, in the chip structure, the puppet seal ring structure includes several mutually independent metal derbies.
Optionally, in the chip structure, the metal derby is crux.
Compared with prior art, the invention has the advantages that：
The seal ring structure of the present invention includes at least two circle metal wires and at least one buffer part, is led between the metal wire
It crosses the buffer part to be interconnected with one another, the area of the seal ring structure is expanded by the buffer part structure.Correspondingly,
The seal ring structure is formed only to need to change exposure mask version in the step of passivation layer carries out selective etch
Design, you can form the pattern at least two grooves and at least one buffer groove for being connected to the groove；Then,
The groove and buffer groove are filled into row metal again, being formed has the close of at least two circle metal wires and at least one buffer part
Seal ring structure.The production method is simple, and the seal ring structure performance formed is good.Also, using above-mentioned seal ring structure
Chip structure can enhance the seal ring structure and the bonding force of understructure, and enhancing is resisted by follow-up process (such as protective layer
Baking process) huge stress that it is brought, it can effectively reduce what it occurred peeling off in chip structure in follow-up process
Risk is conducive to protect chip structure.
Further, the seal ring structure not only increases the buffer part connected between the metal wire, and
Further include the pseudo- seal ring structure on the outside of the metal wire of outmost turns, the gold of at least partly described pseudo- seal ring structure and outmost turns
Belong to line to be connected.The area of the seal ring structure is further expanded, not only the seal ring structure within outmost turns metal wire
It is an entirety, moreover, also constituting an entirety with the pseudo- seal ring structure other than outmost turns metal wire, greatly strengthens in core
The bonding force of seal ring structure described in chip architecture and understructure is conducive to the dispersion of follow-up process stress, is more conducive to
Protect seal ring structure, passivation layer and chip structure.
Description of the drawings
Fig. 1 is well known a kind of local overlooking schematic diagram of chip structure described in inventor；
Fig. 2 is the process flow chart of the production method of seal ring structure described in the embodiment of the present invention；
Fig. 3 to Fig. 6 shows for the corresponding structure of each step in seal ring structure production method described in one embodiment of the invention
It is intended to；
Fig. 7 to Figure 12 is seal ring structure schematic diagram described in other embodiments of the present invention.
Specific implementation mode
A kind of well known local overlooking schematic diagram of chip structure is as shown in Figure 1, the chip structure includes described in inventor
One substrate (in figure schematic diagram omit) includes the A2 (institutes of Cutting Road area of the circuit region A1 and outside of inside in the substrate
Cutting Road area A2 is stated in the surrounding of the circuit region A1, is only illustrated in figure wherein on one side), in order to protect in the substrate
The structure of circuit region A1 includes a passivation layer 10 in the upper surface of the substrate, and the passivation layer 10 covers the circuit region A1
With Cutting Road area A2, seal ring structure is inlaid in the passivation layer 10, the seal ring structure includes inside and outside two circles metal
(inner ring metal wire 110 and outer ring metal wire 111, the metal wire are a rectangular ring to line, and one is only illustrated in figure
Side), two circle metal wires between be independent from each other, two circle metal wires width could be provided as it is different, such as inner ring metal wire
110 width can be more than the width of outer ring metal wire 111；Meanwhile in actual process, in order to balance on the cutting area A2
The reasonable layout of the metallic region of passivation layer 10, in general, can also be arranged in the passivation layer 10 on the cutting area A2 pseudo- close
Seal ring structure, the puppet seal ring structure includes several mutually independent metal derbies 112 in crux, the metal derby
112 are located at the outside of outer ring metal wire 111, and are also to be separated by leave with outer ring metal wire 111.
However, inventor is the study found that chip structure as shown in Figure 1, in subsequent encapsulating process, such as to protective layer
(Polyimide) when being toasted, at a certain temperature, the deformation of Polyimide can generate corresponding stress to chip structure,
Because above-mentioned seal ring structure is single, Impact direction is also consistent, and then, Polyimide can tear the sealing while deformation
Ring structure and passivation layer 10 fail there are peeling risk occurs in chip structure.
Therefore, it is based on the studies above and discovery, inventor provides a kind of new seal ring structure and is located in a substrate, including
At least two enclose metal wires and at least one buffer part, are interconnected with one another by the buffer part between the metal wire.
Correspondingly, another side according to the present invention, inventor additionally provides a kind of production method of seal ring structure, such as schemes
Shown in 2, the production method includes：
S1, a passivation layer is formed in the upper surface of a substrate；
S2, selective etch is carried out to the passivation layer, is formed at least two grooves and extremely in the passivation layer
Lack the pattern of a buffer groove, is connected by the buffer groove between the groove；
S3, metal being filled in the groove and buffer groove, forming a seal ring structure, the seal ring structure includes
The buffer part in metal wire and the buffer groove in the groove.
In addition, according to another aspect of the invention, inventor additionally provides a kind of chip structure, including：
One substrate, the substrate include the circuit region of inside and the Cutting Road area in outside；
Described in one passivation layer and the seal ring structure on the circuit region, the passivation layer and seal ring structure covering
Substrate, and the seal ring structure is embedded in the passivation layer, the seal ring structure is including at least two circle metal wires and extremely
Lack a buffer part, is interconnected with one another by the buffer part between the metal wire.
The seal ring structure of the present invention includes at least two circle metal wires and at least one buffer part, is led between the metal wire
It crosses the buffer part to be interconnected with one another, the area of the seal ring structure is expanded by the buffer part structure.Correspondingly,
The seal ring structure is formed only to need to change exposure mask version in the step of passivation layer carries out selective etch
Design, you can form the pattern at least two grooves and at least one buffer groove for being connected to the groove；Then,
The groove and buffer groove are filled into row metal again, being formed has the close of at least two circle metal wires and at least one buffer part
Seal ring structure.The production method is simple, and the seal ring structure performance formed is good.Also, using above-mentioned seal ring structure
Chip structure can enhance the seal ring structure and the bonding force of understructure, and enhancing is resisted by follow-up process (such as protective layer
Baking process) huge stress that it is brought, it can effectively reduce what it occurred peeling off in chip structure in follow-up process
Risk is conducive to protect chip structure.
Seal ring structure of the present invention and preparation method thereof, chip structure are carried out below in conjunction with flow chart and schematic diagram
More detailed description, which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can change herein
The present invention of description, and still realize the advantageous effects of the present invention.Therefore, following description should be understood as this field skill
Art personnel's is widely known, and is not intended as limitation of the present invention.
The present invention is more specifically described by way of example with reference to attached drawing in the following passage.It is wanted according to following explanation and right
Ask book, advantages and features of the invention that will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
It is exemplified below the embodiment of described seal ring structure and preparation method thereof, chip structure, clearly to illustrate the present invention
Content, it is understood that, present disclosure is not restricted to following embodiment, other to pass through ordinary skill people
The improvement of the conventional technical means of member is also within the thought range of the present invention.
Fig. 2 to Figure 12 is please referred to, wherein figure 2 show the production methods of seal ring structure described in the embodiment of the present invention
Process flow chart, Fig. 3 to Fig. 6 show that each step corresponds in seal ring structure production method described in one embodiment of the invention
Structural schematic diagram；And Fig. 7 to Figure 12 shows seal ring structure schematic diagram described in other embodiments of the present invention.
As shown in Fig. 2, first, executing step S1, a passivation layer is formed in the upper surface of a substrate.Such as Fig. 3 and Fig. 4 institutes
Show, the substrate 1 includes the circuit region A1 of inside and the Cutting Road area A2 in outside, and the substrate 1 is to be formed on a silicon substrate
Semiconductor structure；As shown in figure 4, forming the passivation layer 20 in the upper surface of the substrate, i.e., the described passivation layer 20 covers
The material of the circuit region A1 and Cutting Road area A2, the passivation layer 20 can be silica (SiO2) or silicon nitride (Si3N4)
Deng.
Then, step S2 is executed, selective etch is carried out to the passivation layer 20, being formed in the passivation layer has extremely
Lack the pattern of two grooves and at least one buffer groove, is connected by the buffer groove between the groove.The step
It is the most important step of seal ring structure needed for formation in the present embodiment, and, it is only necessary to the exposure technology in the step
It optimizes and improves, can achieve the object of the present invention.First, the passivation layer 20 is exposed, the exposure technology
Need using being designed with the mask plate of special pattern so that after etching technics, can in the passivation layer 20 shape
At the pattern at least two grooves and at least one buffer groove, and it is connected by the buffer groove between the groove
It is logical.In the present embodiment, it is preferred that two grooves and a buffer groove are formed in the passivation layer 20, as shown in figure 5,
Two grooves are respectively inner groovy B10 and external groove B11, and the buffer groove is first of the S-shaped setting between two grooves
Be open B12.
In addition, in actual process, in order to balance the passivation layer 20 on the Cutting Road area A2 metallic region point
Cloth usually can also shape in the passivation layer 20 on the Cutting Road area A2 when carrying out selective etch to the passivation layer 20
At the pattern of pseudo- groove, preferably, in order to increase the bonding force of follow-up seal ring structure and understructure (substrate), at least partly
The puppet groove is connected with external groove B11, and the pseudo- groove may include several mutually independent 4th open Cs, and institute
It is in crux to state the 4th open C.Preferably, in the present embodiment, all the 4th open Cs with the external groove
B11 is connected.As shown in Figure 5.
Then, step S3 is executed, metal is filled in the groove and buffer groove, forms a seal ring structure, it is described
Seal ring structure is included in the buffer part in the metal wire in the groove and the buffer groove.Specifically, as shown in fig. 6,
Full aluminum metal is filled in structure shown in Fig. 5, then forms a seal ring structure, the seal ring structure includes inner ring metal wire
210, outer ring metal wire 211, connection two circle metal wires (metal wire is a ring being square, and is only illustrated in figure
One side) S-shaped setting the first metal strip 212 (i.e. a buffer part 212) and be connected with outer ring metal wire 211
The metal derby 213 (being referred to as pseudo- seal ring structure) of several cruxs.In this way, formed seal ring structure with it is existing close
Seal ring structure is compared, and the buffer part 212 of the inside and outside metal wire of connection is not only increased, moreover, by pseudo- seal ring structure structure
Metal derby 213 is connected with outer ring metal wire 211, expands the area of seal ring structure, meanwhile, it is applied to chip knot
(chip structure includes substrate 1 to structure, and the substrate 1 includes the Cutting Road area A2 of the circuit region A1 and outside of inside；One passivation
Layer 20 and the above-mentioned seal ring structure being embedded in the passivation layer 20) in, enhance the seal ring structure and understructure
The bonding force of (substrate) can be very good protection chip structure, the phenomenon that prevent from peeling off in chip structure.
Obviously, in other embodiments, the pattern of the groove and buffer groove that are formed in the passivation layer 20 is simultaneously unlimited
In pattern as shown in Figure 5, it is only necessary to the design of reticle pattern when changing exposure, by subsequent etching processes, the pattern
It can diversification.For example, the pattern can also be structure as shown in Figure 7, difference lies in figures for structure shown in Fig. 5 and Fig. 7
4 grooves and 3 buffer grooves are formd in 7 in the passivation layer 20,4 grooves are respectively innermost circle groove B10 ',
One groove B13, the second groove B14 and outmost turns groove B11 ', the buffer groove between the adjacent groove set for S-shaped
The the first opening B12 ' set (the i.e. described pattern includes 3 the first opening B12 ').Specific selective etch technique is this
Field those of ordinary skill's can be known, this will not be repeated here.Correspondingly, passing through the sealing formed after structure as shown in Figure 7
Ring structure includes just 4 circle metal wires and 3 buffer parts, and 4 circle metal wires are respectively innermost circle metal wire 210 ', the first metal wire
214, the metal wire 211 ' of the second metal wire 215 and outmost turns, the buffer part between the adjacent metal wire are S-shaped set
The first metal strip 212 ' set (buffer part i.e. in 4 circle metal wires includes the first metal strip 212 ' of 3 S-shaped settings).
Obviously, the seal ring structure further includes pseudo- seal ring structure (structure with Fig. 6 is the same), is several and outmost turns gold
Belong to the metal derby 213 for the crux that line 211 ' is connected, structure as shown in Figure 8.Likewise, such seal ring structure
Can be good, it is applied in chip structure, equally can be very good protection chip structure.
In addition, the pattern formed in the passivation layer 20 can also be structure as shown in Figure 9, in fig.9, institute
It includes that 4 grooves and 1 buffer groove are compared wherein the pattern of 4 grooves is identical as structure shown in Fig. 7 to state pattern to be also
Fig. 7, Fig. 9 the difference is that, the buffer groove in the pattern is all groove of connection, and S-shaped is set
The the second opening B12 〞 set.Correspondingly, it is as shown in Figure 10 by the seal ring structure formed after structure as shown in Figure 9, it is formed
Seal ring structure and Fig. 8 structures it is essentially identical, difference lies in, buffer part in Figure 10 between all metal wires be in
212 〞 of the second metal strip of S-shaped setting.The seal ring structure is applied in chip structure, the institute in the seal ring structure
It is more preferable to state 212 〞 dispersive stress effects of buffer part, is more conducive to protection chip structure.
In addition, the pattern formed in the passivation layer 20 can also have it is much similar or similar to above-described embodiment
Pattern, such as：The buffer groove may include several thirds opening, and each third opening is at an acute angle with the groove
Or obtuse angle is connected (it is of course also possible to be to be vertically connected, only stress dispersion effect is slightly weaker)；Several described thirds
Being open B15 can be with arranged in parallel (as shown in figure 11).Correspondingly, the buffer part of the seal ring structure formed can be several
Third metal strip, every third metal strip are connected at an angle with the metal wire；The buffering of the seal ring structure
Portion can also be several third metal strips 216 (as shown in figure 12) being arranged parallel to each other, it should be noted that Figure 11 and figure
12 label label identical as Fig. 3 to Figure 10 indicates identical structure, and this will not be repeated here.Such same energy of seal ring structure
Enough realize the purpose of the present embodiment.
Obviously, above-mentioned seal ring structure and the chip structure including above-mentioned seal ring structure are not limited to above-mentioned making side
Method.
To sum up, seal ring structure of the invention includes at least two circle metal wires and at least one buffer part, the metal wire
Between be interconnected with one another by the buffer part, the area of the seal ring structure is expanded by the buffer part structure.
It only needs to change to expose in the step of passivation layer carries out selective etch to cover correspondingly, to form the seal ring structure
The design of film version, you can form the figure at least two grooves and at least one buffer groove for being connected to the groove
Case；Then, then to the groove and buffer groove into row metal fill, being formed has at least two circle metal wires and at least one slow
Rush the seal ring structure in portion.The production method is simple, and the seal ring structure performance formed is good.Also, use above-mentioned sealing
The chip structure of ring structure can enhance the seal ring structure and the bonding force of understructure, and enhancing is resisted by follow-up process
The huge stress that (such as protective layer baking process) brings it can effectively reduce it and occur chip structure in follow-up process
The risk of middle peeling is conducive to protect chip structure.
Further, the seal ring structure not only increases the buffer part connected between the metal wire, and
Further include the pseudo- seal ring structure on the outside of the metal wire of outmost turns, the gold of at least partly described pseudo- seal ring structure and outmost turns
Belong to line to be connected.The area of the seal ring structure is further expanded, not only the seal ring structure within outmost turns metal wire
It is an entirety, moreover, also constituting an entirety with the pseudo- seal ring structure other than outmost turns metal wire, greatly strengthens in core
The bonding force of seal ring structure described in chip architecture and understructure is conducive to the dispersion of follow-up process stress, is more conducive to
Protect seal ring structure, passivation layer and chip structure.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (27)
1. a kind of seal ring structure is located in a substrate, which is characterized in that the seal ring structure includes at least two circle metal wires
An at least buffer part is interconnected with one another by the buffer part between the metal wire.
2. seal ring structure as described in claim 1, which is characterized in that described slow by one between the adjacent metal wire
Portion's connection is rushed, the buffer part is the first metal strip of S-shaped setting.
3. seal ring structure as described in claim 1, which is characterized in that described slow by one between all metal wires
Portion's connection is rushed, the buffer part is the second metal strip of S-shaped setting.
4. seal ring structure as described in claim 1, which is characterized in that the buffer part includes several third metal strips.
5. seal ring structure as claimed in claim 4, which is characterized in that every third metal strip is in the metal wire
Acute angle or obtuse angle are connected.
6. seal ring structure as claimed in claim 4, which is characterized in that several third metal strips are arranged in parallel.
7. the seal ring structure as described in claim 1 to 6 any one, the seal ring structure further includes pseudo- sealing ring knot
Structure, the puppet seal ring structure are located at the outside of the metal wire of outmost turns.
8. seal ring structure as claimed in claim 7, which is characterized in that at least partly described pseudo- seal ring structure and outmost turns
Metal wire be connected.
9. seal ring structure as claimed in claim 7, which is characterized in that the puppet seal ring structure includes that several are mutually only
Vertical metal derby.
10. seal ring structure as claimed in claim 9, which is characterized in that the metal derby is crux.
11. a kind of production method of seal ring structure, which is characterized in that the production method includes：
A passivation layer is formed in the upper surface of a substrate；
Selective etch is carried out to the passivation layer, is formed in the passivation layer at least two grooves and at least one buffering
The pattern of groove is connected by the buffer groove between the groove；
Metal is filled in the groove and buffer groove, forms a seal ring structure, and the seal ring structure is included in described
The buffer part in metal wire and the buffer groove in groove.
12. the production method of seal ring structure as claimed in claim 11, which is characterized in that pass through between the adjacent groove
One buffer groove connection, the buffer groove are the first opening of S-shaped setting.
13. the production method of seal ring structure as claimed in claim 11, which is characterized in that pass through between all grooves
One buffer groove connection, the buffer groove are the second opening of S-shaped setting.
14. the production method of seal ring structure as claimed in claim 11, which is characterized in that the buffer groove includes several
A third opening.
15. the production method of seal ring structure as claimed in claim 14, which is characterized in that each third opening and institute
It states that groove is at an acute angle or obtuse angle is connected.
16. the production method of seal ring structure as claimed in claim 14, which is characterized in that several described third openings are flat
Row arrangement.
17. the production method of the seal ring structure as described in claim 11 to 16 any one, which is characterized in that the metal
For aluminum metal.
18. the production method of the seal ring structure as described in claim 11 to 16 any one, which is characterized in that the substrate
The Cutting Road area of circuit region and outside including inside；The pattern of the groove and buffer groove is formed on the circuit region
Passivation layer in.
19. the production method of seal ring structure as claimed in claim 18, which is characterized in that selected to the passivation layer
Further include the pattern that pseudo- groove is formed in the passivation layer on the Cutting Road area in the step of selecting property etches；Described recessed
In the step of filling metal in slot and buffer groove, further includes filling the metal in the pseudo- groove, form a pseudo- sealing
Ring structure.
20. the production method of seal ring structure as claimed in claim 19, which is characterized in that at least partly described pseudo- groove with
The groove of outmost turns is connected.
21. the production method of seal ring structure as claimed in claim 19, which is characterized in that the puppet groove includes several
Mutually independent 4th opening.
22. the production method of seal ring structure as claimed in claim 21, which is characterized in that the 4th opening is in cross
Shape.
23. a kind of chip structure, which is characterized in that including：
One substrate, the substrate include the circuit region of inside and the Cutting Road area in outside；
One passivation layer and the seal ring structure on the circuit region, the seal ring structure are as claim 1 to 6 is arbitrary
Seal ring structure described in one, the passivation layer and seal ring structure cover the substrate, and the seal ring structure is inlayed
In the passivation layer.
24. chip structure as claimed in claim 23, the seal ring structure further includes pseudo- seal ring structure, the pseudo- sealing
Ring structure is located at the outside of the metal wire of outmost turns, and the pseudo- seal ring structure is located in the Cutting Road area.
25. chip structure as claimed in claim 24, which is characterized in that at least partly described pseudo- seal ring structure and outmost turns
Metal wire be connected.
26. chip structure as claimed in claim 24, which is characterized in that the puppet seal ring structure includes that several are mutually only
Vertical metal derby.
27. chip structure as claimed in claim 26, which is characterized in that the metal derby is crux.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710165608.3A CN108630613A (en) | 2017-03-20 | 2017-03-20 | Seal ring structure and preparation method thereof, chip structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710165608.3A CN108630613A (en) | 2017-03-20 | 2017-03-20 | Seal ring structure and preparation method thereof, chip structure |
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| CN108630613A true CN108630613A (en) | 2018-10-09 |
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| CN201710165608.3A Pending CN108630613A (en) | 2017-03-20 | 2017-03-20 | Seal ring structure and preparation method thereof, chip structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610092A (en) * | 2003-10-23 | 2005-04-27 | 株式会社瑞萨科技 | Semiconductor device |
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| CN203941897U (en) * | 2014-07-01 | 2014-11-12 | 中芯国际集成电路制造(北京)有限公司 | A kind of chip seal ring structure |
| CN105374765A (en) * | 2014-09-02 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | Chip sealing ring structure and manufacturing method thereof |
| CN105448857A (en) * | 2014-09-02 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Chip sealing ring structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1610092A (en) * | 2003-10-23 | 2005-04-27 | 株式会社瑞萨科技 | Semiconductor device |
| CN203895433U (en) * | 2014-06-19 | 2014-10-22 | 中芯国际集成电路制造(北京)有限公司 | Sealing ring structure |
| CN203941897U (en) * | 2014-07-01 | 2014-11-12 | 中芯国际集成电路制造(北京)有限公司 | A kind of chip seal ring structure |
| CN105374765A (en) * | 2014-09-02 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | Chip sealing ring structure and manufacturing method thereof |
| CN105448857A (en) * | 2014-09-02 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Chip sealing ring structure and manufacturing method thereof |
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