CN108624949B - Preparation method of tellurium-magnesium-cadmium single crystal material, single crystal material and application thereof - Google Patents
Preparation method of tellurium-magnesium-cadmium single crystal material, single crystal material and application thereof Download PDFInfo
- Publication number
- CN108624949B CN108624949B CN201810386669.7A CN201810386669A CN108624949B CN 108624949 B CN108624949 B CN 108624949B CN 201810386669 A CN201810386669 A CN 201810386669A CN 108624949 B CN108624949 B CN 108624949B
- Authority
- CN
- China
- Prior art keywords
- magnesium
- tellurium
- single crystal
- cadmium
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a preparation method of a tellurium-magnesium-cadmium single crystal material, a crystal material and application thereof, wherein the preparation method comprises the steps of preparing a tellurium-magnesium-cadmium polycrystal material by using a high-temperature melting method, growing the crystal material by using a vertical Bridgman method, and finally carrying out in-situ annealing to obtain the tellurium-magnesium-cadmium single crystal material; the preparation raw materials comprise: according to the stoichiometric ratio, the Cd content is satisfied0.95Mg0.05Cd, Mg and Te of Te are taken as basic raw materials, excessive Cd or excessive Te is added on the basis of the basic raw materials, and In is doped; the temperature of a high-temperature zone of the vertical Bridgman method is 1120-1150 ℃, the temperature of a low-temperature zone of the vertical Bridgman method is 900-960 ℃, and the reduction rate is 0.5-1 mm/h. The preparation method is simple and low in cost, and the large-size tellurium-magnesium-cadmium single crystal can be prepared by controlling proper crystal growth parameters, so that the technical problems of complexity and small size of the existing tellurium-magnesium-cadmium single crystal preparation method are solved. Meanwhile, polycrystalline material synthesis and crystal growth are carried out in a crucible, so that the pollution of raw materials is avoided.
Description
Technical Field
The invention belongs to the field of II-VI compound semiconductor material preparation, and relates to a preparation method of a tellurium-magnesium-cadmium single crystal material.
Background
The X-ray and gamma-ray detector is also called nuclear radiation detector, and plays a vital role in the fields of medical imaging, environmental protection, industrial monitoring, nuclear safety detection, prohibited product inspection, physical study of celestial bodies and the like. At present, the semiconductor nuclear radiation detector material mainly focuses on the research of compound semiconductor materials with wide forbidden band and high average atomic number.
The tellurium-magnesium-cadmium (CdMgTe) compound semiconductor single crystal material has high density (5.83 g/cm)3) High average atomic number (235.6 at% Mg content of 5 at%), high effective mass (49.5), and high resistivity (>1010Ω · cm), excellent electron mobility lifetime product(s) ((s)>10-4cm2V). The ideal forbidden bandwidth (Cd) can be obtained by using a small amount of Mg in CdTe0.95Mg0.05The forbidden band width of Te reaches 1.60 eV). Therefore, the Mg content can be minimized to obtain the required forbidden bandwidth and introduce fewer composition-related defects. The segregation coefficient of Mg in CdTe is almost close to 1.0, which ensures a homogeneous distribution of Mg throughout the ingot. Lattice constant of CdTe
And lattice constant of MgTe
The method is very close to the method, so that the tellurium-magnesium-cadmium crystal has good crystallinity, and can generate a large-volume CdMgTe single crystal with few defects, thereby fundamentally reducing the production cost of large-area devices.
Document 1(K.Itoh, Preparation and solvent properties of solution Cd1- xMgxTe, Journal of the Physical Society of Japan,1967,22:1119), reports CdMgTe single crystals as p-n junction electroluminescent diode materials (which can excite visible red light) and not as radiation detector materials. Document 2(U.
A.G.Bluiett,I.K.Jones,S.B.Trivedi,R.T.Shah,Crystal growth and infrared spectroscopy of Cr:Cd1-xZnxTe and Cr:Cd1-xMgxTe, Journal of Crystal Growth,2006,287:243- & lt247.) reports that Cr-doped CdMgTe crystals are used for near infrared (MIR) solid-state laser and LED materials, and not for radiation detector materials. Document 3(A.Hossain, V.Yakimovich, A.E.Bolotnikov, K.Bolton, G.S.Camarda, Y.Cui, J.Franc, R.Gul, K-HKIM, H.Pittman, G.Yang, R.Herpst,R.B.James,Development of cadmium magnesium telluride(Cd1-xMgxTe) for room temperature X-and gamma-ray detectors, Journal of Crystal Growth,2013,379:34-40) reported that CdMgTe single crystals grown by the zone-melting Te solvent method are complicated in Growth process and that the CdMgTe crystals grown are small in size, have a diameter of only 18mm and a length of not more than 40 mm. Meanwhile, no specific parameters of crystal growth are given, and key information is lacked.
Disclosure of Invention
The invention aims to provide a preparation method of a tellurium-magnesium-cadmium single crystal material, which solves the problems that the CdMgTe crystal size is small and key information of crystal growth is lacked in the existing preparation method, and also solves the problems that the Te solvent method wastes more raw materials and is not beneficial to reducing the cost.
The second purpose of the invention is to provide a tellurium-magnesium-cadmium single crystal material which is prepared by the method of the invention.
The third purpose of the invention is to use the obtained tellurium-magnesium-cadmium single crystal material for preparing a nuclear radiation detector.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a preparation method of a tellurium-magnesium-cadmium single crystal material comprises the steps of preparing a tellurium-magnesium-cadmium polycrystal material by using a high-temperature melting method, and then carrying out crystal growth on the tellurium-magnesium-cadmium polycrystal material by using a vertical Bridgman method;
according to Cd0.95Mg0.05The molar ratio of Te, Cd, Mg and Te are used as basic raw materials for preparation, wherein Cd or Te is excessively filled, and the doped element is In;
the temperature of a high-temperature zone of the vertical Bridgman method is 1120-1150 ℃, the temperature of a low-temperature zone of the vertical Bridgman method is 900-960 ℃, and the reduction rate is 0.5-1 mm/h.
Optionally, according to Cd0.95Mg0.05And the molar ratio of Te, namely adding Cd, Mg and Te into a reaction container as preparation base raw materials, and then adding excessive Cd or Te into the reaction container to fill the reaction container.
Optionally, In percentage by weight of the prepared base material, the molar fraction of the excess Cd is 0.1%, the molar fraction of the excess Te is 0.5% -1.5%, and the doping volume concentration of In is 1-10 ppm.
Optionally, the vacuum degree of the high-temperature melting method is 5-6 × 10-5Pa, and the temperature is 1100-1150 ℃.
Optionally, the purities of Cd, Mg, and Te are 7N, 5N, and 7N, respectively, and the purity of In is 7N.
Optionally, the crystal growth time of the vertical Bridgman method is 200-300 h.
Optionally, in-situ annealing treatment is further performed on the single crystal material obtained after the crystal growth, the annealing time of the in-situ annealing is 120-240 hours, and the annealing temperature is 800 ℃.
The tellurium-magnesium-cadmium single crystal material is prepared by the preparation method of the tellurium-magnesium-cadmium single crystal material.
The tellurium-magnesium-cadmium single crystal material is applied to the preparation of nuclear radiation detectors.
Compared with the prior art, the method has the following advantages:
the invention adopts the improved vertical Bridgman method to realize crystal growth under the condition of no seed crystal, thereby effectively avoiding pollution caused by re-charging. The method has simple process and can grow large-size crystals. The method is not only suitable for the growth of the crystal with the Mg content of 5 percent, but also can be used for the growth of tellurium-magnesium-cadmium crystals with different Mg contents; meanwhile, polycrystalline material synthesis and crystal growth are carried out in a crucible, so that the pollution of raw materials is avoided.
Drawings
FIG. 1 is a schematic view of a crystal growth apparatus;
FIG. 2 shows Cd in examples 1 and 20.95Mg0.05I-V test results of Te crystal;
FIG. 3 shows Cd in examples 1 and 20.95Mg0.05IR test results of Te crystal;
the invention is described in detail below with reference to the drawings and the detailed description.
Detailed Description
The preparation method of the tellurium-magnesium-cadmium single crystal material comprises the steps of preparing a tellurium-magnesium-cadmium polycrystal material by using a high-temperature melting method, and then performing crystal growth on the tellurium-magnesium-cadmium polycrystal material by using a vertical Bridgman method to obtain the tellurium-magnesium-cadmium single crystal material;
the preparation raw materials comprise: according to the stoichiometric ratio, the Cd content is satisfied0.95Mg0.05Cd, Mg and Te of Te are taken as basic raw materials, excessive Cd or excessive Te is added on the basis of the basic raw materials, and In is doped; the existing Te solvent method has much excessive Te, is relatively wasted, and raw materials are purified; the method can accurately calculate the consumption of the raw materials, reduce the waste of the raw materials and simplify the purification process.
The temperature of a high-temperature zone of the vertical Bridgman method is 1120-1150 ℃, the temperature of a low-temperature zone of the vertical Bridgman method is 900-960 ℃, and the reduction rate is 0.5-1 mm/h. The synthesis temperature of each compound semiconductor material is different, and the temperature area provided by the invention is particularly suitable for Cd0.95Mg0.05Te crystal.
With Cd0.95Mg0.05Te is taken as an example, the mole fraction of excessive Cd is 0.1 percent, the mole fraction of excessive Te is 0.5 to 1.5 percent, and the doping volume concentration of In is 1 to 10 ppm;
the vacuum degree of the high-temperature melting method is 5-6 x 10-5Pa, and the temperature is 1100-1150 ℃.
Cd. The purity of Mg and Te was 7N, 5N and 7N, respectively, and the purity of In was 7N.
The crystal growth time of the vertical Bridgman method is 200-300 h.
And carrying out in-situ annealing treatment on the single crystal material obtained after the crystal growth, wherein the annealing time of the in-situ annealing is 120-240 h, and the annealing temperature is 800 ℃.
With reference to fig. 1, the method for preparing the cadmium magnesium telluride single crystal material of the present invention comprises the following steps:
1. according to the stoichiometric ratio, Cd will be satisfied0.95Mg0.05High-purity Cd, Mg and Te raw materials (the purity is respectively 7N, 5N and 7N) of Te are put into a high-purity quartz crucible (the purity is 6N) plated with a carbon film, then Cd with the mole fraction of 0.1 percent or excessive Te with the mole fraction of 0.5-1.5 percent is added, and finally high-purity Cd, Mg and Te raw materials with the volume concentration of 1-10 ppm are addedPure metal In (purity 7N);
2. vacuumizing the quartz crucible filled with the materials by using a molecular pump, wherein when the vacuum degree reaches 5-6 multiplied by 10-5And when Pa, sealing the quartz crucible. Putting the sealed quartz crucible into a rocking furnace, mixing the materials, keeping the temperature at 1100-1150 ℃, keeping the temperature for 48 hours, and cooling the furnace to room temperature to obtain a tellurium-magnesium-cadmium polycrystal material;
3. the supporting end of the quartz crucible filled with the polycrystalline material is arranged on a bracket in a two-section crystal growth furnace, the parameters of the growth furnace are set, and the crystal growth is carried out by adopting an improved vertical Bridgman method. Firstly, after 15-20 hours, the high-temperature area and the low-temperature area of the furnace body are respectively heated to 1120-1150 ℃ and 900-960 ℃ to obtain a melt, and the melt is kept for 12 hours. Then, the quartz crucible is descended at the speed of 0.5-1 mm/h and the crucible is rotated at the same time, and the tellurium-magnesium-cadmium crystal starts to grow from the bottom of the crucible. After the crystal grows for 200-300 h, the upper furnace and the lower furnace are simultaneously cooled to 800 ℃ at a certain speed. And finally, carrying out in-situ annealing, cooling to 500 ℃ after annealing for 120-240 h, turning off a power supply, and carrying out furnace cooling to obtain the tellurium-magnesium-cadmium single crystal.
In fact, the crystal growth method of the invention is not only suitable for the growth of the crystal with the Mg content of 5 percent, but also can be used for the growth of the tellurium-magnesium-cadmium crystal with different Mg contents. The crystals prepared by the method in the prior art have the size of 18mm in diameter and the length of no more than 40 mm. The diameter of the crystal prepared by the method can reach 30mm, the length of the crystal can be 100-130 mm, and the growth time is short; meanwhile, the product of the energy resolution and the carrier mobility life of the radiation detector is better than that of the prior art, the energy resolution literature of the prior art is about 12 percent, the energy resolution of the crystal prepared by the invention is lower than 10 percent, and the carrier mobility life product literature is 10 percent-4cm2Of the order of magnitude of V, the crystals prepared according to the invention are in the order of 10-3cm2Of the order of/V.
The invention will be further illustrated with reference to specific examples.
Example 1:
according to Cd0.95Mg0.05The stoichiometric ratio of Te is 146.1417g, 1.7587g and 184.3216g of high-purity Cd, Mg and Te simple substance raw materials are put into a high-purity quartz crucible plated with a carbon film, and then excessive Cd with the molar fraction of 0.1% and high-purity metal In with the volume concentration of 10ppm are added; vacuumizing the filled quartz crucible to 5 x 10- 5Sealing with oxyhydrogen flame when Pa; then loading the materials into a rocking furnace for material combination at 1100 ℃ and preserving the heat for 48 hours to obtain a tellurium-magnesium-cadmium polycrystal material; putting the quartz crucible filled with the polycrystalline material into a crystal growth furnace for crystal growth; after 15 hours, respectively heating the high-temperature area and the low-temperature area of the furnace body to 1120 ℃ and 960 ℃ and preserving the temperature for 12 hours; rotating the quartz crucible and descending at the speed of 1mm/h, and after the crystal grows for 200h, cooling the upper furnace and the lower furnace to 800 ℃; and after in-situ annealing for 120h, cooling to 500 ℃ again, and turning off a power supply for furnace cooling to obtain the tellurium-magnesium-cadmium single crystal.
Cd with the diameter of 30mm and the length of 100mm is successfully grown by using the method0.95Mg0.05Te single crystal, I-V test shows that the resistivity is 1.6 multiplied by 1010Ω · cm (see fig. 2), IR tests showed an infrared transmittance of about 60% (see fig. 3).
Example 2:
according to Cd0.95Mg0.05According to the stoichiometric ratio of Te, high-purity Cd, Mg and Te simple substance raw materials with the mass of 152.4787g, 1.8312g and 184.3216g are respectively weighed and put into a high-purity quartz crucible plated with a carbon film, and then excessive Te with the mole fraction of 1% and high-purity metal In with the volume concentration of 5ppm are added; vacuumizing the filled quartz crucible to 6 x 10-5Sealing with oxyhydrogen flame when Pa; then putting the materials into a rocking furnace for mixing at 1110 ℃ and preserving heat for 48 hours to obtain a tellurium-magnesium-cadmium polycrystal material; putting the quartz crucible filled with the polycrystalline material into a crystal growth furnace for crystal growth; after 20 hours, respectively heating the high-temperature area and the low-temperature area of the furnace body to 1150 ℃ and 900 ℃ and preserving heat for 12 hours; rotating the quartz crucible and descending at the speed of 0.5mm/h, and after the crystal grows for 150h, cooling the upper furnace and the lower furnace to 800 ℃; and after in-situ annealing for 240h, cooling to 500 ℃ again, and turning off a power supply for furnace cooling to obtain the tellurium-magnesium-cadmium single crystal.
Cd with the diameter of 30mm and the length of 130mm is successfully grown by using the method0.95Mg0.05Te single crystal having a crystal resistivity of 4.7×1010Ω · cm (see fig. 2), IR tests showed an infrared transmittance of about 58% (see fig. 3).
The above examples are intended to illustrate the invention and not to limit it, and modifications and improvements of the method of the invention made by a person skilled in the art are considered to be within the scope of the invention as defined by the claims.
Claims (6)
1. A preparation method of a tellurium-magnesium-cadmium single crystal material is characterized by comprising the steps of preparing a tellurium-magnesium-cadmium polycrystal material by using a high-temperature melting method, and then carrying out crystal growth on the tellurium-magnesium-cadmium polycrystal material by using a vertical Bridgman method;
according to Cd0.95Mg0.05The molar ratio of Te, Cd, Mg and Te are used as basic raw materials for preparation, wherein Cd or Te is excessively filled, and the doped element is In;
the temperature of a high-temperature zone of the vertical Bridgman method is 1120-1150 ℃, the temperature of a low-temperature zone of the vertical Bridgman method is 900-960 ℃, and the reduction rate is 0.5-1 mm/h;
the preparation method comprises the following steps of preparing a base raw material, wherein the mole fraction of excess Cd is 0.1%, the mole fraction of excess Te is 0.5-1.5%, and the doping volume concentration of In is 1-10 ppm.
2. The method for preparing a cadmium magnesium telluride single crystal material as set forth in claim 1, wherein the Cd is0.95Mg0.05And the molar ratio of Te, namely adding Cd, Mg and Te into a reaction container as preparation base raw materials, and then adding excessive Cd or Te into the reaction container to fill the reaction container.
3. The method for preparing a tellurium-magnesium-cadmium single crystal material according to claim 1 or 2, wherein the degree of vacuum of the high temperature melting method is 5 to 6 x 10-5Pa, and the temperature is 1100-1150 ℃.
4. The method for preparing a cadmium magnesium telluride single crystal material as claimed In claim 1 or 2, wherein the purities of Cd, Mg and Te are 7N, 5N and 7N, respectively, and the purity of In is 7N.
5. The method for preparing a tellurium-magnesium-cadmium single crystal material according to claim 1 or 2, wherein the crystal growth time of the vertical Bridgman method is 200 to 300 hours.
6. The preparation method of the tellurium-magnesium-cadmium single crystal material as claimed in claim 1 or 2, characterized in that the single crystal material obtained after the crystal growth is further subjected to in-situ annealing treatment, the annealing time of the in-situ annealing is 120-240 h, and the annealing temperature is 800 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810386669.7A CN108624949B (en) | 2018-04-26 | 2018-04-26 | Preparation method of tellurium-magnesium-cadmium single crystal material, single crystal material and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810386669.7A CN108624949B (en) | 2018-04-26 | 2018-04-26 | Preparation method of tellurium-magnesium-cadmium single crystal material, single crystal material and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108624949A CN108624949A (en) | 2018-10-09 |
| CN108624949B true CN108624949B (en) | 2021-02-09 |
Family
ID=63694726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810386669.7A Active CN108624949B (en) | 2018-04-26 | 2018-04-26 | Preparation method of tellurium-magnesium-cadmium single crystal material, single crystal material and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108624949B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111979581B (en) * | 2019-05-22 | 2022-05-31 | 清华大学 | MnBi2Te4Method for producing bulk single crystal |
| CN114197041A (en) * | 2021-12-14 | 2022-03-18 | 苏州科睿浦光电科技有限公司 | Preparation method of trititanium pentoxide polycrystal material and trititanium pentoxide polycrystal material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101220514A (en) * | 2007-09-30 | 2008-07-16 | 西北工业大学 | Method for manufacturing high resistivity tellurium-zincium-cadmium crystal |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4083449B2 (en) * | 2002-03-19 | 2008-04-30 | 日鉱金属株式会社 | CdTe single crystal manufacturing method |
| CN101092748B (en) * | 2007-06-05 | 2010-05-19 | 西北工业大学 | Method for preparing Te-Zn-Cd monocrystal in large volume |
-
2018
- 2018-04-26 CN CN201810386669.7A patent/CN108624949B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101220514A (en) * | 2007-09-30 | 2008-07-16 | 西北工业大学 | Method for manufacturing high resistivity tellurium-zincium-cadmium crystal |
Non-Patent Citations (2)
| Title |
|---|
| "Development of Cadmium Magnesium Telluride(Cd1-xMgxTe) for room temperature X- and gamma-ray detectors";A.Hossain等;《Journal of Crystal Growth》;20121205;第379卷;第35页左栏晶体生长过程部分第2段和图3、第40页左栏结论部分和标题 * |
| U.Hömmerich等."Crystal growth and infrared spectroscopy of Cr:Cd1-xZnxTe and Cr:Cd1-xMgxTe".《Journal of Crystal Growth》.2005,第287卷第243-247页. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108624949A (en) | 2018-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Mohamed et al. | Growth and fundamentals of bulk β-Ga2O3 single crystals | |
| JP4083449B2 (en) | CdTe single crystal manufacturing method | |
| CN101871123B (en) | Method and device for growing cadmium zinc telluride crystals in mobile tellurium solvent melting zone | |
| CN101210346B (en) | Horizontal zone melting method for growing tellurium zinc cadmium single-crystal | |
| CN108624949B (en) | Preparation method of tellurium-magnesium-cadmium single crystal material, single crystal material and application thereof | |
| Al-Hamdi et al. | CdTe synthesis and crystal growth using the high-pressure Bridgman technique | |
| CN110366612A (en) | Compound semiconductor and its manufacturing method | |
| CN102220644B (en) | Method for improving performance of cadmium zinc telluride crystal | |
| CN103911667B (en) | A kind of method for monocrystal growth of contact without sidewall of crucible based on necking down type crucible | |
| CN101619487B (en) | P type conductive cuprous iodide monocrystal and hydrothermal growing method thereof | |
| CN106319633B (en) | A kind of large scale high infrared transmittance CdS method for monocrystal growth | |
| Popovych et al. | The effect of chlorine doping concentration on the quality of CdTe single crystals grown by the modified physical vapor transport method | |
| US20050115489A1 (en) | Method of obtaining a cdte or cdznte single crystal and the single crystal thus obtained | |
| CN116334759A (en) | Seed crystal dissolving method and device for growing tellurium-zinc-cadmium crystals based on THM | |
| JP2000086398A (en) | P type gaas single crystal and its production | |
| CN107201548A (en) | The preparation method of zinc telluridse monocrystalline | |
| CN203878235U (en) | Necking-down crystal crucible | |
| JP4723082B2 (en) | Method for producing Ga-doped silicon single crystal | |
| JP2017197413A (en) | Compound semiconductor substrate and manufacturing method thereof | |
| CN114481328A (en) | Preparation device and method of tellurium-zinc-cadmium seed crystal | |
| US3771970A (en) | Method of producing cadmium telluride crystals | |
| EP2980282B1 (en) | Compound semiconductor single crystals for photoelectric conversion elements, photoelectric conversion element, and production method for compound semiconductor single crystals for photoelectric conversion elements | |
| Su et al. | Growth of CdZnTe Crystals the Bridgman Technique with Controlled Overpressures of Cd | |
| JP4778150B2 (en) | Manufacturing method of ZnTe-based compound semiconductor single crystal and ZnTe-based compound semiconductor single crystal | |
| Isshiki et al. | 9 Bulk Crystal Growth of Wide-Bandgap ll-Vl Materials |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |