CN108615814A - A kind of preparation method of Organic Thin Film Transistors - Google Patents
A kind of preparation method of Organic Thin Film Transistors Download PDFInfo
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- CN108615814A CN108615814A CN201810568741.8A CN201810568741A CN108615814A CN 108615814 A CN108615814 A CN 108615814A CN 201810568741 A CN201810568741 A CN 201810568741A CN 108615814 A CN108615814 A CN 108615814A
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- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 40
- 229920002472 Starch Polymers 0.000 claims abstract description 15
- 235000019698 starch Nutrition 0.000 claims abstract description 15
- 239000008107 starch Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 46
- 229910052710 silicon Inorganic materials 0.000 claims description 46
- 239000010703 silicon Substances 0.000 claims description 46
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 238000001704 evaporation Methods 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000001914 filtration Methods 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 230000001537 neural effect Effects 0.000 abstract description 2
- 230000004044 response Effects 0.000 abstract description 2
- 230000006403 short-term memory Effects 0.000 abstract description 2
- 239000007784 solid electrolyte Substances 0.000 abstract description 2
- 238000003860 storage Methods 0.000 abstract description 2
- 238000013508 migration Methods 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 210000000225 synapse Anatomy 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 7
- 239000011368 organic material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000003643 water by type Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000416536 Euproctis pseudoconspersa Species 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention relates to a kind of preparation methods of Organic Thin Film Transistors, belong to microelectronic component technical field.The present invention is prepared for glued film using the starch solution after gelatinization, the film has a large amount of loose hole and gap, loose hole and gap exist for hydrone storage and Ion transfer provides good condition, due to containing a large amount of hydrophilic radicals in starch molecule, in gelatinization, the aquation of height can occur for starch molecule and hydrone, generate ionic conductivity, as frequency continuously decreases, the proton response time increases, a large amount of Hydrogen Protons are to starch solid electrolyte and migration at channel layer interface and accumulate, form electric double layer Organic Thin Film Transistors, the synapse transistor shows excellent electrology characteristic, carrier mobility is high, and device stability is good, and realize the double pulses laser of biological neural cynapse, the emulation of the characteristics such as long short term memory and high-pass filtering.
Description
Technical field
The present invention relates to a kind of preparation methods of Organic Thin Film Transistors, belong to microelectronic component technical field.
Background technology
Organic Thin Film Transistors is to control the active device of organic material conductive capability using extra electric field is changed.In recent years
Come, the Organic Thin Film Transistors being made of conjugated polymer, oligomer or organic molecule, due to having the advantages that some uniquenesses
It is taken seriously.Compared with inorganic thin-film transistors, Organic Thin Film Transistors has following major advantages：
（1）The type of the film technique of organic film is more（Such as LB monolayer technologies, numerator self-assembly technique, vacuum are steamed
Hair technology etc.）, the size of device is small（Molecular scale）, integrated level is high, and the reduction of molecular scale and the raising of integrated level mean
The reduction of operation power and the raising of arithmetic speed；
（2）With transistor made of organic polymer, electrical property can be by carrying out modification appropriate to organic molecular structure（
Atom and group appropriate are connected or clipped on strand）Improved.Meanwhile passing through chemistry or electrochemical doping, You Jiju
Closing the conductivity of object can change in insulator to range wider between conductor；
（3）Organic matter is easily obtained, and the manufacture craft of Organic Thin Film Transistors is also more simple（It is not required for strictly controlling
Atmospheric condition and harsh purity requirement）, thus the cost of device can be effectively reduced；
（4）The thin film transistor (TFT) of so-called " full stress-strain " that is all prepared by organic material shows extraordinary flexibility,
Garnier's research shows that：The distortion or bending of appropriateness are carried out to device, the electrical characteristics of device change there is no significant.It is good
Good flexibility has further widened the use scope of Organic Thin Film Transistors.
Currently, the application of Organic Thin Film Transistors focuses primarily upon flat-panel monitor, the transactional cards of low side, electronic recognition mark
Label and sensor etc..Meanwhile using organic field effect tube, the electrical of organic material itself can also be studied in turn
Energy（Conductivity, mobility etc.）, to provide foundation for the better organic material of synthesis performance.The boundary of insulating layer and semiconductor layer
Planar condition even also affects the carrier injection situation of source, drain electrode and semiconductor layer, different insulating layer and semiconductor
The contact resistance difference of bed boundary Zhong Yuan, drain electrode and semiconductor layer are likely to be breached as many as 10 times, and threshold voltage is also by significantly low
It reduces, therefore the regulation and control of the carrier mobility, OTFT threshold voltages that improve OTFT are all very crucial problems to be had in recent years
The research of machine field-effect tube causes the attention of more and more scientific research personnel.
Invention content
The technical problems to be solved by the invention：, OTFT threshold voltage tune low for existing transistor carrier mobility
Difficult problem is controlled, a kind of preparation method of Organic Thin Film Transistors is provided.
In order to solve the above technical problems, the technical solution adopted by the present invention is：
A kind of preparation method of Organic Thin Film Transistors, the specific steps are：
（1）It removes ionized water and is heated to 100 DEG C, add starch and stir 30~40min, obtain colloidal fluid；
（2）It is cleaned by ultrasonic 3~5min of silicon chip with acetone, then is blown with nitrogen after being rinsed 2~3 times with absolute ethyl alcohol and deionized water
It is dry, it is placed on drying station and dries, obtain pretreatment silicon chip；
（3）Colloidal fluid is dripped into spin-coating film on pretreatment silicon chip, then silicon chip is placed in 10~12h of baking on drying station, must be applied
Film silicon chip；
（4）With acetone be cleaned by ultrasonic film 3~5min of silicon chip, then dried up with nitrogen and be put into hot evaporation 30 in vacuum coater~
The golden film of 50nm is transferred in tube furnace after vapor deposition and is made annealing treatment to golden film, after being cooled to room temperature polycrystalline organic thin film
Body pipe.
Step（1）The starch dosage is the 10~15% of deionized water quality.
Step（2）The silicon chip is the N-type heavy doping silicon chip that surface grown 200~300nm thermal oxidation silicons.
Step（3）The film forming thickness is 100~5000nm.
Step（3）The spin-coating film process is to keep 30~40s to be spin-coated to silicon chip with the rotating speed of 3000~4000r/min
On substrate.
Step（4）The hot evaporation parameter is evaporation rate 0.1nm/s, 2 × 10-6Pa of vacuum degree.
Step（4）The annealing process is under the argon gas atmosphere of 5% hydrogen containing volume fraction, with 300~350 DEG C
20~30min of isothermal holding.
Compared with other methods, advantageous effects are the present invention：
（1）The present invention is prepared for glued film using the starch solution after gelatinization, the film have a large amount of loose hole and
Gap, loose hole and gap exist for hydrone storage and Ion transfer provide good condition, due in starch molecule
Containing a large amount of hydrophilic radicals, in gelatinization, the aquation of height can occur for starch molecule and hydrone, generate ionic conduction
Property, as frequency continuously decreases, the proton response time increases, and a large amount of Hydrogen Protons are at starch solid electrolyte and channel layer interface
It migrates and accumulates, form electric double layer Organic Thin Film Transistors, which shows excellent electrology characteristic, current-carrying
Transport factor is high, and device stability is good, and realizes the double pulses laser, long short term memory and high pass of biological neural cynapse
The emulation of the characteristics such as filtering；
（2）Organic Thin Film Transistors of the present invention has solvable liquefaction preparation, flexible, high mobility characteristic, while the present invention is carried
The preparation method manufacturing cost of confession is low, thus flexibility, large area, inexpensive Organic Thin Film Transistors preparation in have it is important
Application value.
Specific implementation mode
It takes 100~120mL deionized waters to be heated to 100 DEG C, adds 12~15g starch, stirred with 300~400r/min
30~40min obtains colloidal fluid, is cleaned by ultrasonic 3~5min of silicon chip with acetone, then rinsed 2~3 times with absolute ethyl alcohol and deionized water
It is dried up, is placed on drying station with nitrogen afterwards, dried at 100~105 DEG C, obtain pretreatment silicon chip, colloidal fluid is dripped into pre- place
It manages on silicon chip, keeps 30~40s to be spin-coated in silicon chip substrate with the rotating speed of 3000~4000r/min, control film forming thickness is 100
~5000nm, then silicon chip is placed in 10~12h of baking on drying station, drying temperature is 30~40 DEG C, obtains film silicon chip, uses acetone
Be cleaned by ultrasonic film 3~5min of silicon chip, then dried up and be put into vacuum coater with nitrogen, using mask plate hot evaporation 30~
The golden film of 50nm, control evaporation rate are 0.1nm/s, and vacuum degree is 2 × 10-6Pa is transferred in tube furnace to gold after vapor deposition
Film is made annealing treatment, under the argon gas atmosphere of 5% hydrogen containing volume fraction, with 300~350 DEG C of 20~30min of isothermal holding,
Organic Thin Film Transistors is obtained after being cooled to room temperature.
It takes 100mL deionized waters to be heated to 100 DEG C, adds 12g starch, 30min is stirred with 300r/min, is obtained gluey
Liquid is cleaned by ultrasonic silicon chip 3min with acetone, then is dried up with nitrogen after being rinsed 2 times with absolute ethyl alcohol and deionized water, is placed in baking
It on dry platform, is dried at 100 DEG C, obtains pretreatment silicon chip, colloidal fluid dripped on pretreatment silicon chip, with the rotating speed of 3000r/min
30s is kept to be spin-coated in silicon chip substrate, control film forming thickness is 100nm, then silicon chip is placed on drying station and toasts 10h, is dried
Temperature is 30 DEG C, obtains film silicon chip, is cleaned by ultrasonic film silicon chip 3min with acetone, then dried up with nitrogen and be put into vacuum coater
In, using the golden film of mask plate hot evaporation 30nm, control evaporation rate is 0.1nm/s, and vacuum degree is 2 × 10-6Pa, vapor deposition finish
After be transferred in tube furnace golden film made annealing treatment, under the argon gas atmosphere of 5% hydrogen containing volume fraction, at 300 DEG C of heat preservations
20min is managed, Organic Thin Film Transistors is obtained after being cooled to room temperature.
It takes 110mL deionized waters to be heated to 100 DEG C, adds 13g starch, 35min is stirred with 350r/min, is obtained gluey
Liquid is cleaned by ultrasonic silicon chip 4min with acetone, then is dried up with nitrogen after being rinsed 2 times with absolute ethyl alcohol and deionized water, is placed in baking
It on dry platform, is dried at 102 DEG C, obtains pretreatment silicon chip, colloidal fluid dripped on pretreatment silicon chip, with the rotating speed of 3000r/min
36s is kept to be spin-coated in silicon chip substrate, control film forming thickness is 1000nm, then silicon chip is placed on drying station and toasts 11h, is dried
Temperature is 35 DEG C, obtains film silicon chip, is cleaned by ultrasonic film silicon chip 4min with acetone, then dried up with nitrogen and be put into vacuum coater
In, using the golden film of mask plate hot evaporation 40nm, control evaporation rate is 0.1nm/s, and vacuum degree is 2 × 10-6Pa, vapor deposition finish
After be transferred in tube furnace golden film made annealing treatment, under the argon gas atmosphere of 5% hydrogen containing volume fraction, at 320 DEG C of heat preservations
24min is managed, Organic Thin Film Transistors is obtained after being cooled to room temperature.
It takes 120mL deionized waters to be heated to 100 DEG C, adds 15g starch, 40min is stirred with 400r/min, is obtained gluey
Liquid is cleaned by ultrasonic silicon chip 5min with acetone, then is dried up with nitrogen after being rinsed 3 times with absolute ethyl alcohol and deionized water, is placed in baking
It on dry platform, is dried at 105 DEG C, obtains pretreatment silicon chip, colloidal fluid dripped on pretreatment silicon chip, with the rotating speed of 4000r/min
40s is kept to be spin-coated in silicon chip substrate, control film forming thickness is 5000nm, then silicon chip is placed on drying station and toasts 12h, is dried
Temperature is 40 DEG C, obtains film silicon chip, is cleaned by ultrasonic film silicon chip 5min with acetone, then dried up with nitrogen and be put into vacuum coater
In, using the golden film of mask plate hot evaporation 50nm, control evaporation rate is 0.1nm/s, and vacuum degree is 2 × 10-6Pa, vapor deposition finish
After be transferred in tube furnace golden film made annealing treatment, under the argon gas atmosphere of 5% hydrogen containing volume fraction, at 350 DEG C of heat preservations
30min is managed, Organic Thin Film Transistors is obtained after being cooled to room temperature.
Reference examples：The Organic Thin Film Transistors of Hefei company production.
The Organic Thin Film Transistors of example and reference examples is detected, specific detection is as follows：
1 performance characterization contrast table of table
| Detection project | Example 1 | Example 2 | Example 3 | Reference examples |
| Mobility/cm2·V-1·s-1 | 0.12 | 0.13 | 0.15 | 65.5 |
| Responsiveness/AW-1 | 11.6 | 12.1 | 12.5 | 7.9 |
| Subthreshold swing/（mV/decade） | 156.8 | 147.5 | 139.7 | 318.4 |
| On-off ratio | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 104 |
As shown in Table 1, the Organic Thin Film Transistors that prepared by the present invention has higher mobility, and subthreshold swing is relatively low, control
Simply, it is ideal Organic Thin Film Transistors.
Claims (7)
1. a kind of preparation method of Organic Thin Film Transistors, which is characterized in that the specific steps are：
（1）It removes ionized water and is heated to 100 DEG C, add starch and stir 30~40min, obtain colloidal fluid；
（2）It is cleaned by ultrasonic 3~5min of silicon chip with acetone, then is blown with nitrogen after being rinsed 2~3 times with absolute ethyl alcohol and deionized water
It is dry, it is placed on drying station and dries, obtain pretreatment silicon chip；
（3）Colloidal fluid is dripped into spin-coating film on pretreatment silicon chip, then silicon chip is placed in 10~12h of baking on drying station, must be applied
Film silicon chip；
（4）With acetone be cleaned by ultrasonic film 3~5min of silicon chip, then dried up with nitrogen and be put into hot evaporation 30 in vacuum coater~
The golden film of 50nm is transferred in tube furnace after vapor deposition and is made annealing treatment to golden film, after being cooled to room temperature polycrystalline organic thin film
Body pipe.
2. a kind of preparation method of Organic Thin Film Transistors as described in claim 1, which is characterized in that step（1）The shallow lake
Powder dosage is the 10~15% of deionized water quality.
3. a kind of preparation method of Organic Thin Film Transistors as described in claim 1, which is characterized in that step（2）The silicon
Piece is the N-type heavy doping silicon chip that surface grown 200~300nm thermal oxidation silicons.
4. a kind of preparation method of Organic Thin Film Transistors as described in claim 1, which is characterized in that step（3）It is described at
Film thickness is 100~5000nm.
5. a kind of preparation method of Organic Thin Film Transistors as described in claim 1, which is characterized in that step（3）The rotation
It is to keep 30~40s to be spin-coated in silicon chip substrate with the rotating speed of 3000~4000r/min to apply film forming procedure.
6. a kind of preparation method of Organic Thin Film Transistors as described in claim 1, which is characterized in that step（4）The heat
Evaporation plating parameter is evaporation rate 0.1nm/s, vacuum degree 2 × 10-6Pa。
7. a kind of preparation method of Organic Thin Film Transistors as described in claim 1, which is characterized in that step（4）It is described to move back
Fiery processing procedure is under the argon gas atmosphere of 5% hydrogen containing volume fraction, with 300~350 DEG C of 20~30min of isothermal holding.
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| CN201810568741.8A CN108615814A (en) | 2018-06-05 | 2018-06-05 | A kind of preparation method of Organic Thin Film Transistors |
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| CN201810568741.8A CN108615814A (en) | 2018-06-05 | 2018-06-05 | A kind of preparation method of Organic Thin Film Transistors |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180582A (en) * | 2020-02-12 | 2020-05-19 | 福州大学 | Synaptic transistor based on electret and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1790727A (en) * | 2004-12-17 | 2006-06-21 | 三星电子株式会社 | Organic thin film transistor for an OLED display |
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2018
- 2018-06-05 CN CN201810568741.8A patent/CN108615814A/en not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1790727A (en) * | 2004-12-17 | 2006-06-21 | 三星电子株式会社 | Organic thin film transistor for an OLED display |
Non-Patent Citations (2)
| Title |
|---|
| HEEJEONG JEONG等: "Novel Eco-Friendly Starch Paper for Use in Flexible,Transparent, and Disposable Organic Electronics", 《ADVANCED FUNCTIONAL MATERIALS》 * |
| 郭立强等: "玉米淀粉固态电解质质子\电子杂化突触晶体管", 《物理学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180582A (en) * | 2020-02-12 | 2020-05-19 | 福州大学 | Synaptic transistor based on electret and preparation method thereof |
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