CN1085907C - Charge-sensitive amplifier circuit - Google Patents
Charge-sensitive amplifier circuit Download PDFInfo
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- CN1085907C CN1085907C CN98125111A CN98125111A CN1085907C CN 1085907 C CN1085907 C CN 1085907C CN 98125111 A CN98125111 A CN 98125111A CN 98125111 A CN98125111 A CN 98125111A CN 1085907 C CN1085907 C CN 1085907C
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- resistance
- capacitor
- circuit
- field effect
- transistor
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Abstract
The present invention relates to a special integrated circuit for space environments. High input impedance and low noise are determined by a first electrode field effect transistor. In order to obtain large open loop voltage gain, a test circuit adopts a field effect transistor with high transconductance and low noise, and the field effect transistor, other resistors and a transistor T1 form a common source amplifier. An input electrode is positively biased, so the impedance is little. A bootstrap circuit is composed of a capacitor C3, and an emitting electrode of a transistor T3 is an output end. The resistor R10 is debugged, so the static working point of the circuit can be adjusted. A filter circuit is composed of a capacitor E4 and a capacitor C4, so the interference of high frequency and low frequency in a power supply can be filtered.
Description
The present invention relates to a kind of charge sensitive amplifier circuit, particularly a kind ofly can reduce component number, can realize the charge sensitive amplifier circuit of enlarging function with monolithic integrated circuit.
Space exploration needs low-power consumption, highly reliable, the device that can adapt to various space environments.
The existing charge sensitive amplifier circuit that is used for space exploration, it has complex structure and the big shortcoming that takes up room mostly.
The objective of the invention is to, a kind of charge sensitive amplifier circuit is provided, it has the few and little advantage that takes up room of components and parts of use.
Another object of the present invention is to, a kind of charge sensitive amplifier circuit is provided, it can be made integrated circuit.
A kind of charge sensitive amplifier circuit of the present invention, wherein capacitor C 1 is connected to field effect transistor T1 grid and passes through capacitor C 2 respectively, resistance R 2 is connected with the OUT end with capacitor C 3, the other end of capacitor C 1 is by a resistance R 1 ground connection, field effect transistor T1 source electrode is respectively by electrochemical capacitor E1, resistance R 4 ground connection, T1 drain electrode connecting resistance R3 and transistor T 2 emitters, T2 base stage and resistance R 5, resistance R 6 connects, resistance R 6 other end ground connection, the T2 collector electrode links to each other with resistance R 8 and transistor T 3 base stages, resistance R 8 is connected with capacitor C 3 and resistance R 7 with the other end, capacitor C 3 other ends are connected with capacitor C 2 other ends, the T3 emitter is connected with the resistance R 9 and resistance R 2 other ends, resistance R 9 is respectively by electrochemical capacitor E3 and resistance R 10 ground connection, resistance R 11 1 termination powers, the other end is connected to T3 collector electrode and resistance R 7 respectively, R5, the other end of R3, and be connected E4 negative terminal and capacitor C 4 other end ground connection with E4 anode and capacitor C 4 simultaneously.
Below in conjunction with drawings and Examples feature of the present invention and effect are further detailed, wherein:
Fig. 1 is circuit theory diagrams of the present invention.
Fig. 2 is an equivalent electric circuit of the present invention.
Fig. 3 is the integrated circuit diagram of the present invention.
See also shown in Figure 1, wherein capacitor C 1 is connected to field effect transistor T1 grid and passes through capacitor C 2 respectively, resistance R 2 is connected with the OUT end with capacitor C 3, the other end of capacitor C 1 is by a grounding through resistance, field effect transistor T1 source electrode is respectively by electrochemical capacitor E1, resistance R 4 ground connection, T1 drain electrode connecting resistance R3 and transistor T 2 emitters, T2 base stage and resistance R 5, resistance R 6 connects, resistance R 6 other end ground connection, the T2 collector electrode links to each other with resistance R 8 and transistor T 3 base stages, resistance R 8 is connected with capacitor C 3 and resistance R 7 with the other end, capacitor C 3 other ends are connected with capacitor C 2 other ends, the T3 emitter is connected with the resistance R 9 and resistance R 2 other ends, resistance R 9 is respectively by electrochemical capacitor E3 and resistance R 10 ground connection, resistance R 11 1 termination powers, the other end is connected to T3 collector electrode and resistance R 7 respectively, R5, the other end of R3, and be connected E4 negative terminal and capacitor C 4 other end ground connection with E4 anode and capacitor C 4 simultaneously.
The present invention is that high input impedance, low noise are determined by first utmost point field effect transistor, and resistance R i=100M Ω in order to obtain bigger open-loop voltage gain, adopts high transconductance, low noise field effect transistor T1, g in the test circuit
m〉=5mA/V forms commonsource amplifier with resistance R 3, resistance R 4, E1, and open-loop gain depends primarily on the g of T1
mT2 and resistance R 5, resistance R 6, resistance R 8, resistance R 8 are connected into the cobasis state, input utmost point positively biased, and impedance is very little, enough Kk mainly are because the boostrap circuit that capacitor C 3 is formed solves, the emission of T3 is output very, by debugging resistance resistance R 10, can adjust the quiescent point of circuit.E4 and capacitor C 4 are formed filter circuit, and the high and low frequency that can filter out in the power supply disturbs.
Fig. 2 is an equivalent circuit diagram of the present invention.
See also shown in Figure 3 again, a kind of charge sensitive amplifier circuit of the present invention, the common-base amplifier that integrated circuit is made up of resistance R 5, resistance R 6, resistance R 8, resistance R 8 and T2 (second utmost point amplifier of the present invention), resistance R 9, T3 form common-collector amplifier (the 3rd utmost point amplifier of the present invention), current-limiting resistance R11, and resistance R 3, resistance R 4 constitute.
A kind of charge sensitive amplifier circuit of the present invention, having high input impedance, low noise, single power supply, power consumption, little (≤characteristics such as 20mW), and have bigger open-loop gain (KV 〉=1250) adopt capacitor C f feedback back to constitute charge amplifier.The present invention is suitable as preamplifier, is applied to space particle detection and need be to the occasion of amplifying than weak signal.
The present invention can be made into monolithic integrated circuit, and 8 pin are arranged, the black pottery encapsulation, and model is LT9731.
Claims (1)
1, a kind of charge sensitive amplifier circuit, it is characterized in that, wherein capacitor C 1 is connected to field effect transistor T1 grid and passes through capacitor C 2 respectively, resistance R 2 is connected with the OUT end with capacitor C 3, the other end of capacitor C 1 is by a grounding through resistance, field effect transistor T1 source electrode is respectively by electrochemical capacitor E1, resistance R 4 ground connection, T1 drain electrode connecting resistance R3 and transistor T 2 emitters, T2 base stage and resistance R 5, resistance R 6 connects, resistance R 6 other end ground connection, the T2 collector electrode links to each other with resistance R 8 and transistor T 3 base stages, resistance R 8 is connected with capacitor C 3 and resistance R 7 with the other end, capacitor C 3 other ends are connected with capacitor C 2 other ends, the T3 emitter is connected with the resistance R 9 and resistance R 2 other ends, by electrochemical capacitor E3 and resistance R 10 ground connection, resistance R 11 1 termination powers, the other end are connected to T3 collector electrode and resistance R 7 respectively to resistance R 9 respectively, R5, the other end of R3, and be connected E4 negative terminal and capacitor C 4 other end ground connection with E4 anode and capacitor C 4 simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98125111A CN1085907C (en) | 1998-11-20 | 1998-11-20 | Charge-sensitive amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98125111A CN1085907C (en) | 1998-11-20 | 1998-11-20 | Charge-sensitive amplifier circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1254982A CN1254982A (en) | 2000-05-31 |
| CN1085907C true CN1085907C (en) | 2002-05-29 |
Family
ID=5229034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98125111A Expired - Fee Related CN1085907C (en) | 1998-11-20 | 1998-11-20 | Charge-sensitive amplifier circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1085907C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102420577B (en) * | 2011-11-28 | 2015-03-11 | 北京大学 | Multi-path anti-interference low-noise charge sensitive preamplifier |
| CN104931271A (en) * | 2015-05-19 | 2015-09-23 | 成都诚邦动力测试仪器有限公司 | Bootstrap circuit-based engine measurement and control system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1031619A (en) * | 1987-06-30 | 1989-03-08 | 菲利浦光灯制造公司 | Be equipped with the semiconductor devices of charge transfer device |
| CN1034646A (en) * | 1988-01-25 | 1989-08-09 | 内燃机及测量技术有限公司Avl公司 | Charge amplifier circuit |
-
1998
- 1998-11-20 CN CN98125111A patent/CN1085907C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1031619A (en) * | 1987-06-30 | 1989-03-08 | 菲利浦光灯制造公司 | Be equipped with the semiconductor devices of charge transfer device |
| CN1034646A (en) * | 1988-01-25 | 1989-08-09 | 内燃机及测量技术有限公司Avl公司 | Charge amplifier circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1254982A (en) | 2000-05-31 |
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Granted publication date: 20020529 Termination date: 20141120 |
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| EXPY | Termination of patent right or utility model |