CN108574046A - A kind of perovskite solar cell and preparation method thereof - Google Patents
A kind of perovskite solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN108574046A CN108574046A CN201810504600.XA CN201810504600A CN108574046A CN 108574046 A CN108574046 A CN 108574046A CN 201810504600 A CN201810504600 A CN 201810504600A CN 108574046 A CN108574046 A CN 108574046A
- Authority
- CN
- China
- Prior art keywords
- layer
- preparation
- solar cell
- perovskite
- perovskite solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to photovoltaic arts, more particularly to conversion perovskite solar cell and preparation method thereof in one kind, the perovskite solar cell, include the flexibility that stacks gradually from bottom to up or common glass substrate, preceding electrode layer, hole transmission layer, perovskite absorbed layer, electron transfer layer, buffer layer, metal electrode layer successively, doped with upper conversion particles in the perovskite solar cell hole transmission layer.The preparation process of the present invention is easy to operate, and prepared perovskite cell power generation is efficient, and prepared device performance is stable, uniform, suitable for industrial production.
Description
Technical field
The present invention relates to photovoltaic material fields, and in particular to titanium ore solar cell and preparation method thereof is converted in one kind.
Background technology
Solar cell has many advantages, such as that environmentally protective, energy storage is abundant, is known as most promising green energy resource.In recent years
Coming, the development of hybrid inorganic-organic perovskite solar cell is very rapid, and photoelectric conversion efficiency has reached 22% or so, and
Perovskite solar cell raw material sources are abundant, and simple for process, cost is relatively low, can be prepared into flexible battery, obtain academia
With the extensive attention of industrial circle.
Traditional perovskite solar cell is unable to absorbing wavelength too more than 800nm because its energy gap is 1.55ev
Sunlight.The codope ytterbium ion Yb in perovskite solar cell hole mobile material3+With erbium ion Er3+Or holmium ion Ho3+Or
Thulium ion Tm3+Deng upper conversion ions, the nonabsorbable part long wavelength light of perovskite can be converted into the shorter light of wavelength and by
Calcium titanium ore bed absorbs, and to improve absorptivity of the calcium titanium ore bed to solar energy, the photoelectricity for improving perovskite solar cell turns
Change efficiency.
Invention content
Technical problem to be solved by the invention is to provide converting perovskite solar cell and preparation method thereof in one kind,
Preparation method is simple, can effectively improve the photoelectric properties of solar cell, is suitable for industrial demand.
The technical solution that the present invention solves above-mentioned technical problem is as follows：A kind of perovskite solar cell, include successively from
Down toward electro-conductive glass or flexible substrate, the NiO of upper stackingxHole transmission layer, perovskite absorbed layer, electron transfer layer, buffer layer
And metal electrode layer, the NiOxThe certain density ytterbium ion Yb of cavitation layer codope3+With erbium ion Er3+Or holmium ion Ho3+Or
Thulium ion Tm3+In one kind, wherein NiOxX value ranges in hole transmission layer are 2-3, and include 2 and 3.
The present invention provides a kind of preparation method of perovskite solar cell, includes the following steps：
A, the processing of electro-conductive glass or flexible substrate：Electro-conductive glass or flexible substrate conduction are put into UV ozone machine up
Interior, the setting processing time is 5-30min, opens ultraviolet lamp and carries out UV ozone processing for use；
B、NiOxThe preparation of hole transmission layer：
Nickel oxide, ytterbium oxide, erbium oxide or holimium oxide or thulium oxide are dissolved in acid, obtain corresponding salting liquid and mixed, is added
Alkaline solution, it is that 9-11 obtains suspension to adjust PH, and suspension centrifugation lotion is obtained powder, is forged again after powder is dried
It burns, obtains doped with upper conversion Yb3+And Er3+Or Ho3+Or Tm3+Nickel oxide nanoparticle.To obtain converting doped on from
The NiO of sonxUltrasonic disperse in solvent is added in nano particle, is configured to the first precursor liquid, then by the obtained glass of step A or flexibility
Spin coating or spraying precursor liquid, coating finish on substrate (1), and the nickel oxide layer of the upper conversion ions of doping is carried out heating anneal upward
Processing, cooled to room temperature form the NiO doped with upper conversion ionsxHole transmission layer (2)；
C, the preparation of perovskite absorbed layer：Lead halide and halogenated methyl amine are dissolved in organic solvent, configuration obtains the second forerunner
Liquid, and it is coated on the NiO formed in step BxOn hole transmission layer, annealing obtains perovskite absorbed layer on hot plate；
D, the preparation of electron transfer layer：Fullerene derivate is dissolved in chlorobenzene, and heating stirring dissolves to obtain third precursor liquid,
And be coated on the perovskite absorbed layer handled in step C, and obtain electron transfer layer after making annealing treatment on hot plate；
E, the preparation of buffer layer：By BCP（Chemical name is 2,9- dimethyl -4,7- diphenyl -1,10- ferrosins）Methanol is added
（3mg BCP, the volumetric concentration of methanol is added to be 90% or use pure methanol per ml methanol）In stir to get supersaturated solution, and
It is coated on the electron transfer layer obtained in step D, then annealing obtains buffer layer on hot plate；
F, the preparation of metal electrode layer:The buffering obtained in step E is placed in vacuum evaporation room, vacuum degree reaches 1 × 10-4Pa or more, and Au, Ag or Al are deposited on buffer-layer surface, form metal electrode layer.
As it is of the invention further preferably, in step, the electro-conductive glass or flexible substrate conductive layer be FTO or
ITO, UV ozone processing time are 5-30min, and FTO is the tin oxide for adulterating fluorine, and FTO film layers are in electro-conductive glass or flexible liner
The surface thickness at bottom is 200-400nm, and the tin oxide that ITO is doped indium, and ito film layer is in electro-conductive glass or flexible substrate
Surface thickness is 100-300nm；
In stepb, the drying temperature is 60-120 DEG C, and the calcination temperature is 250-500 DEG C, the annealing temperature
It is 100-200 DEG C, annealing time 10-30min；
In step C, at 100-120 DEG C, annealing time is controlled in 10-30min for temperature of heating plate control；
In step D, at 40-50 DEG C, the temperature of heating plate is controlled at 60-80 DEG C for the heating stirring solution temperature control,
Annealing time is controlled in 10-30min；
In step E, at 60-80 DEG C, annealing time is controlled in 10-30min for the temperature of heating plate control.
Further preferably as the present invention, in stepb, the upper conversion particles of doping are Yb3+And Er3+、Ho3+、Tm3+In
One kind.Foreign atom number Yb：Ni=15-25:100, Er：Ni=2-5:100, Ho:Ni=2-5:100, Tm:Ni=2-5:100,
The concentration of salt solution is 0.05-0.2mol/L, a concentration of 0.5-3mg/ of the nickel oxide in first precursor liquid
ml。
As of the invention further preferred, the sour mixture for one or more of hydrochloric acid, sulfuric acid, nitric acid.
Further preferably as the present invention, in step D, the fullerene derivate is in the third precursor liquid
A concentration of 10-20 mg/mL.
Further preferably as the present invention, the fullerene derivate is PC61(chemical name is 6,6- phenyl-carbon to BM
61- methyl butyrates).
Further preferably as the present invention, in step C, the lead halide and halogenated methyl amine molar ratio are 1：
（0.75-3）, the plumbum ion concentration in second precursor liquid is 0.5-2 mol/L.
Further preferably as the present invention, the lead halide is PbCl2、PbBr2、PbI2One or more of mixing
Object；The halogenated methyl amine is CH3NH3Cl、CH3NH3Br or CH3NH3I。
Further preferably in stepb as the present invention, the lye is sodium carbonate, sodium hydroxide, potassium hydroxide, ammonium hydroxide
One or more of mixture, the acid is the mixture of hydrochloric acid, sulfuric acid, one or more of nitric acid；The solvent
For the mixture of one or more of deionized water, n-butanol, chlorobenzene,
In step C, the organic solvent is the mixture of one or both of DMF, DMSO.
Further preferably as the present invention, in stepb, the NiOxThe thicknesses of layers of hole transmission layer is controlled in 10-
100nm；
In step C, the thicknesses of layers of the perovskite absorbed layer is controlled in 400-500nm；
In step D, the thicknesses of layers of the electron transfer layer is controlled in 50-80nm；
In step E, the thicknesses of layers of the buffer layer is controlled in 10-100nm；
In step F, the thicknesses of layers of the metal electrode layer is controlled in 70-200nm.
The beneficial effects of the invention are as follows：
The present invention is in hole transmission layer NiOxOne kind in middle doping ytterbium and erbium or holmium or thulium, ytterbium are upwards converitng sensitization agent, and erbium,
Holmium, thulium are upper switch active agent, can nonabsorbable long wavelength light of the subwave length more than 800nm of perovskite be converted into wavelength
The shorter light that can be absorbed by calcium titanium ore bed, to improve absorptivity of the calcium titanium ore bed to solar energy, final raising battery
Photoelectric conversion efficiency.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of upper conversion perovskite solar cell device of the present invention.
In attached drawing, parts list represented by the reference numerals are as follows：
1, flexible or glass substrate, 2, preceding electrode, 3, NiOxHole transmission layer, 4, perovskite absorbed layer, 5, electron transfer layer, 6,
Buffer layer, 7, metal electrode.
Specific implementation mode
The principles and features of the present invention are described below, and the given examples are served only to explain the present invention, is not intended to limit
Determine the scope of the present invention.
Embodiment one
A kind of perovskite solar cell, as shown in Figure 1, including successively 1, Conducting Glass, 2, doping Yb, the NiO of ErxIt is empty
Cave transport layer, 3, perovskite absorbed layer, 4, electron transfer layer, 5, buffer layer, 6, metal electrode layer, Conducting Glass is selected as
FTO electro-conductive glass, specific preparation process are as follows：
A, the processing of FTO Conducting Glass 1：The sheet resistance of FTO is 14 Ω in FTO electro-conductive glass, and transmitance 90%, substrate is clear
After washing, conduction is put into UV ozone machine up, the setting processing time is 5min, opens ultraviolet lamp, is carried out to it ultraviolet
Ozone treatment is taken out spare after the completion；
B、NiOxThe preparation of hole transmission layer 2：Nickel oxide, ytterbium oxide, erbium oxide are dissolved in nitric acid, obtain corresponding 0.1mol/L
Nitrate and mixing, be added sodium hydroxide solution, adjust pH value to 10, obtain suspension, by suspension centrifugation, washing and
Dry 10h in 90 DEG C of vacuum drying chambers, then again 350 DEG C calcining 3h, obtain the nickel oxide nanoparticle doped with Yb and Er,
In, the ratio Ni of foreign atom and nickle atom quantity：Yb： Er= 100:20:3.It will be doped with the nickel oxide nano of Yb and Er
Ultrasonic disperse 8h in 1ml deionized waters is added in grain 3mg, is configured to uniform suspension.By the FTO handled well in step A conductions
Glass substrate 1 is positioned over up on spin coating machine table top, and above suspension is added dropwise and carries out spin coating, speed 2000rpm, time 30s,
Then 140 DEG C of annealing 20min, obtain fine and close NiOxHole transmission layer 2, thickness 15nm；
C, the preparation of perovskite absorbed layer 3：It is 0.95 by molar ratio:1 CH3NH3I and PbI2It is dissolved in DMF solution, stirs
4h is dissolved, the second precursor liquid, wherein PbI are configured to2A concentration of 1.8mol/L in the second precursor liquid revolves the second precursor liquid
It is coated in NiOxOn hole transmission layer 2, spin speed 6000rpm, time 30s, then anneal at 105 DEG C 10 min, obtains
Perovskite absorbed layer 3, thickness 500nm；
D, the preparation of electron transfer layer 4：By PC61BM is dissolved in anhydrous chlorobenzene, is configured to the third precursor liquid of 20 mg/mL, and 45
Stirring and dissolving 4h at DEG C.By above-mentioned PC61The chlorobenzene solution of BM is spin-coated on perovskite absorbed layer, spin speed 1500rpm, when
Between 30s, 70 DEG C annealing 10 min, formed PC61BM electron transfer layers 4, thickness 100nm；
E, the preparation of BCP buffer layers 5：30mg BCP are added in 10ml methanol, supersaturated solution is prepared into, takes supernatant spin coating
On the electron transport layer, 70 DEG C of 10 min of annealing, form BCP buffer layers 5, thickness 10nm；
F, the preparation of metal electrode layer 6：The above-mentioned substrate prepared is placed in vacuum evaporation room, vacuum degree reaches 1 × 10-4
100nm Ag are deposited in Pa or more, form Ag electrode layers 6.
Embodiment two
A kind of perovskite solar cell, as shown in Figure 1, including successively 1, Conducting Glass, 2, the NiO of doping ytterbium, holmiumxIt is empty
Cave transport layer, 3, perovskite absorbed layer, 4, electron transfer layer, 5, buffer layer, 6, metal electrode layer, Conducting Glass is selected as
FTO electro-conductive glass, specific preparation process are as follows：
A, the processing of FTO Conducting Glass：The sheet resistance of FTO in FTO Conducting Glass is 14 Ω, transmitance 90%, lining
After the cleaning of bottom, conduction is put into UV ozone machine up, the setting processing time is 5min, opens ultraviolet lamp, is carried out to it
UV ozone processing, takes out spare after the completion；.
B、NiOxThe preparation of hole transmission layer：Nickel oxide, ytterbium oxide, holimium oxide are dissolved in nitric acid, obtained corresponding
The nitrate and mixing, addition sodium hydroxide solution of 0.1mol/L adjusts pH value to 10, obtains suspension, suspension is centrifuged
Lotion obtains powder, will dry 10h in powder and 90 DEG C of vacuum drying chambers, then 350 DEG C of calcining 3h again, obtain doped with Yb and
The nickel oxide nanoparticle of Ho, wherein the ratio Ni of foreign atom and nickle atom：Yb： Ho= 100:20:3.It will be doped with Yb
Ultrasonic disperse in 1ml deionized waters is added with the nickel oxide nanoparticle 3mg of Ho and for 24 hours, is configured to uniform suspension.By step
The FTO electro-conductive glass 1 handled well in A is positioned in thermal station up, and thermal station temperature is 140 DEG C, preheats 5min.It will prepare above
Good suspension pours into spray gun reservoir and is sprayed, and sprays height 200mm, spraying rate 170mm.S-1, spray pressure 3psi, so
Anneal at 140 DEG C 20 min afterwards, obtains the NiO that thickness is 30nmxHole transmission layer 2；
C, the preparation of perovskite absorbed layer：It is 3 by molar ratio:1 CH3NH3I and PbI2It is dissolved in DMF solution, stirring and dissolving
4h is configured to the second precursor liquid, wherein PbI2A concentration of 0.5 mol/L in the second precursor liquid, then by the second precursor liquid
NiO is sprayed in such a way that ultrasound spraysxOn hole transmission layer, height 40mm, spraying rate 170mm.S are sprayed-1, spray pressure
10psi, then anneal at 100 DEG C 10 min, obtains perovskite absorbed layer 3, thickness 480nm；
D, the preparation of electron transfer layer：By PC61BM is dissolved in anhydrous chlorobenzene, is configured to the third precursor liquid of 20 mg/mL, 45 DEG C
Lower 4 h of stirring and dissolving.By above-mentioned P61The chlorobenzene solution of CBM sprays in such a way that ultrasound sprays on perovskite absorbed layer, sprays
Height 40mm, spraying rate 170mm.S- 1,, spray pressure 10psi, 70 DEG C of 10 min of annealing form PC61BM electron transfer layers
4, thickness 95nm；
E, the preparation of BCP buffer layers：The methanol saturated solution of BCP is sprayed in such a way that ultrasound sprays on electron transfer layer,
Spray height 40mm, spraying rate 160mm.S-1, spray pressure 10psi, 70 DEG C of annealing 10 min, formation BCP buffer layers 5,
Thickness is 9nm;
F, the preparation of metal electrode layer：The above-mentioned substrate prepared is placed in vacuum evaporation room, vacuum degree reaches 1 × 10-4
100 nm Ag are deposited in Pa or more, form Ag electrode layers 6.
Embodiment three
A kind of perovskite solar cell, as shown, including successively 1, Conducting Glass, 2, adulterate the NiO of Yb and TmxIt is empty
Cave transport layer, 3, perovskite absorbed layer, 4, electron transfer layer, 5, buffer layer, 6, metal electrode layer, Conducting Glass is selected as
ITO electro-conductive glass, specific preparation process are as follows：
A, the processing of ITO Conducting Glass：The sheet resistance of ITO is 8 Ω, transmitance 86%, substrate in ITO Conducting Glass
After cleaning, conduction is put into UV ozone machine up, the setting processing time is 5min, opens ultraviolet lamp, purple is carried out to it
Outer ozone treatment is taken out spare after the completion；
B、NiOxThe preparation of hole transmission layer：Nickel oxide, ytterbium oxide, thulium oxide are dissolved in nitric acid, obtain the nitrate of 0.1mol/L
And mix, sodium hydroxide solution is added, adjusts pH value to 10, obtains suspension, by suspension centrifugation, washs and in 90 DEG C of vacuum
10h is dried in drying box, then again 350 DEG C calcining 3h, obtain the nickel oxide nanoparticle doped with Yb and Tm, wherein doping
The ratio Ni of atom and nickle atom quantity：Yb： Tm= 100:20:3.It will add doped with the nickel oxide nanoparticle 3mg of Yb and Tm
Enter ultrasonic disperse 8h in 1ml deionized waters, is configured to uniform suspension.It will be doped with the nickel oxide nanoparticle of Yb and Tm
Ultrasonic disperse 8h in 1ml deionized waters is added in 3mg, is configured to uniform suspension.It will be electric before the above-mentioned conductive substrates handled well
Pole-face is positioned over upward on spin coating machine table top, and above suspension is added dropwise and carries out spin coating, speed 2000rpm, time 30s, and then 140
DEG C annealing 20min, obtain fine and close NiOxHole transmission layer 2, thickness 13nm;
C, the preparation of perovskite absorbed layer：It is 0.95 by molar ratio:1 CH3NH3I and PbI2It is dissolved in DMF solution, stirring and dissolving
4h is configured to the second precursor liquid, wherein PbI2A concentration of 1.8mol/L in the second precursor liquid, the second precursor liquid is spin-coated on
NiOxOn hole transmission layer, spin speed 6000rpm, time 30s, then anneal at 105 DEG C 10 min, obtains perovskite
Absorbed layer 3, thickness 495nm；
D, the preparation of electron transfer layer：By PC61BM is dissolved in anhydrous chlorobenzene, is configured to the third precursor liquid of 20 mg/mL, 45 DEG C
Lower stirring and dissolving 4h.By above-mentioned PC61The chlorobenzene solution of BM is spin-coated on perovskite absorbed layer, spin speed 1500rpm, the time
30s, 70 DEG C of 10 min of annealing, forms PC61BM electron transfer layers；
E, the preparation of BCP buffer layers：By in the addition 10ml methanol of 30mg BCP, it is prepared into supersaturated solution, supernatant is taken to revolve
It applies on the electron transport layer, 70 DEG C of 10 min of annealing form BCP buffer layers 5, thickness 8nm;
F, the preparation of metal electrode layer：The above-mentioned substrate prepared is placed in vacuum evaporation room, vacuum degree reaches 1 × 10-4
100 nm Ag are deposited in Pa or more, form Ag electrode layers 6.
Example IV（Undope upper conversion particles）
A kind of perovskite solar cell, as shown, including successively 1, Conducting Glass, 2, NiOxHole transmission layer, 3,
Perovskite absorbed layer, 4, electron transfer layer, 5, buffer layer, 6, metal electrode layer, Conducting Glass be selected as FTO electro-conductive glass its
Specific preparation process is as follows：
A, the processing of FTO Conducting Glass：The sheet resistance of FTO in FTO Conducting Glass is 14 Ω, transmitance 90%, lining
It is spare after the cleaning of bottom.
B、NiOxThe preparation of hole transmission layer：2g nickel acetylacetonates are dissolved in electromagnetic agitation 4h in 150ml acetonitriles, are obtained green
Color clear solution.Electrode before the above-mentioned conductive substrates handled well is positioned over up in heating plate and is heated to 550 DEG C.It takes
It states before nickel acetylacetonate solution 20ml even applications to conductive substrates on electrode surface, sprays height 30mm, spray pressure 10psi,
Continue to heat 30min, close heating, natural cooling obtains fine and close NiOxHole transmission layer 2, thickness 10nm;
C, the preparation of perovskite absorbed layer：It is 0.95 by molar ratio:1 CH3NH3I and PbI2It is dissolved in DMF solution, stirring and dissolving
4h is configured to the second precursor liquid, wherein PbI2A concentration of 1.8mol/L in the second precursor liquid, the second precursor liquid is spin-coated on
NiOxOn hole transmission layer, spin speed 6000rpm, time 30s, then anneal at 105 DEG C 10 min, obtains perovskite
Absorbed layer 3, thickness 495nm；
D, the preparation of electron transfer layer：By PC61BM is dissolved in anhydrous chlorobenzene, is configured to the third precursor liquid of 20 mg/mL, 45 DEG C
Lower stirring and dissolving 4h.By above-mentioned PC61The chlorobenzene solution of BM is spin-coated on perovskite absorbed layer, spin speed 1500rpm, the time
30s, 70 DEG C of 10 min of annealing, forms PC61BM electron transfer layers；
E, the preparation of BCP buffer layers：By in the addition 10ml methanol of 30mg BCP, it is prepared into supersaturated solution, supernatant is taken to revolve
It applies on the electron transport layer, 70 DEG C of 10 min of annealing form BCP buffer layers 5, thickness 8nm;
F, the preparation of metal electrode layer：The above-mentioned substrate prepared is placed in vacuum evaporation room, vacuum degree reaches 1 × 10-4
100 nm Ag are deposited in Pa or more, form Ag electrode layers 6.
Implementation result：Electrical testing is carried out, solar simulator is opened, sets irradiation level between 0.9990-1.0010,
Solar cell is placed on spot center region, connection solar cell is tested with IC testers.Obtain electrical data such as
Shown in following table one：
Table one
| Embodiment | Voc V | Jsc/ mA/cm-2 | FF/% | Eff/% |
| Embodiment 1 | 1.06 | 21.3 | 81.5 | 18.40 |
| Embodiment 2 | 1.05 | 19.17 | 80.3 | 16.16 |
| Embodiment 3 | 1.07 | 20.32 | 81.1 | 17.63 |
| Embodiment 4 | 1.05 | 18.65 | 80.1 | 15.69 |
As can be seen from the table, the open-circuit voltage (Voc) of perovskite solar cell prepared by three embodiments, short circuit current
(Jsc) and fill factor（FF）It is all higher, especially short circuit current (Jsc), significantly larger than battery prepared by conventional method
Short circuit current (Jsc) illustrates to adulterate upper conversion particles in nickel oxide layer, it is impossible to which the part long wavelength of absorption is converted to can be with
The visible light of absorption, improves short circuit current（Jsc）, finally obtained higher electrical generation efficiency（Eff）Perovskite solar-electricity
Pond.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of perovskite solar cell, it is characterised in that：Including the electro-conductive glass stacked gradually from bottom to up or flexible liner
Bottom（1）、NiOxHole transmission layer（2）, perovskite absorbed layer（3）, electron transfer layer（4）, buffer layer（5）And metal electrode layer
（6）, the NiOxHole is co-doped with conversion particles Yb3+And Er3+、Ho3+、Tm3+In one kind.
2. a kind of preparation method of perovskite solar cell, which is characterized in that include the following steps：
A, the processing of electro-conductive glass or flexible substrate (1)：It is for use that electro-conductive glass or flexible substrate are subjected to UV ozone processing；
B、NiOxThe preparation of hole transmission layer (2)：
Nickel oxide, ytterbium oxide, erbium oxide or holimium oxide or thulium oxide are dissolved in acid, obtain corresponding salting liquid and mixed, is added
Alkaline solution, it is that 9-11 obtains suspension to adjust PH, and suspension centrifugation lotion is obtained powder, is forged again after powder is dried
It burns, obtains doped with upper conversion Yb3+And Er3+Or Ho3+Or Tm3+Nickel oxide nanoparticle；
The NiO doped with upper conversion ions that will be obtainedxUltrasonic disperse in solvent is added in nano particle, is configured to the first precursor liquid,
It will be coated with precursor liquid on the obtained glass of step A or flexible substrate (1) again, coating finishes, by the oxidation of the upper conversion ions of doping
Nickel layer carries out heating anneal processing upward, and cooled to room temperature forms the NiO doped with upper conversion ionsxHole transmission layer
(2)；
C, the preparation of perovskite absorbed layer (3)：Lead halide and halogenated methyl amine are dissolved in organic solvent, before configuration obtains second
Liquid is driven, and is coated on the NiO formed in step BxIt on hole transmission layer (2), makes annealing treatment on hot plate, obtains perovskite suction
Receive layer (3)；
D, the preparation of electron transfer layer (4)：Fullerene derivate is dissolved in chlorobenzene, and heating stirring dissolves to obtain third forerunner
Liquid, and be coated on the perovskite absorbed layer (3) handled in step C, and obtain electronics after making annealing treatment on hot plate
Transport layer (4)；
E, the preparation of buffer layer (5)：BCP is added in methanol and stirs to get supersaturated solution, and is coated on and obtains in step D
On electron transfer layer (4), then annealing obtains buffer layer (5) on hot plate；
F, the preparation of metal electrode layer (6):The buffer layer (5) obtained in step E is placed in vacuum evaporation room, vacuum degree reaches
1×10-4Pa or more, and Au, Ag or Al are deposited on buffer layer (5) surface, form metal electrode layer (6).
3. a kind of preparation method of perovskite solar cell according to claim 2, it is characterised in that：
In step, the electro-conductive glass or the conductive layer of flexible substrate are FTO or ITO, flexible substrate be polyetherimide,
One kind of poly- naphthalenedicarboxylic acid ethyl alcohol ester, polyethanol terephthalate or polyimides, UV ozone processing time are 5-
30min；
In stepb, the drying temperature is 60-120 DEG C, time 8-12h;The calcination temperature is 250-500 DEG C, the time
For 1-4h;The annealing temperature is 100-200 DEG C, time 10-30min；
In step C, at 100-120 DEG C, annealing time is controlled in 10-30min for temperature of heating plate control；
In step D, at 40-50 DEG C, the temperature of heating plate is controlled at 60-80 DEG C for the heating stirring solution temperature control,
Annealing time is controlled in 10-30min；
In step E, at 60-80 DEG C, annealing time is controlled in 10-30min for the temperature of heating plate control.
4. a kind of preparation method of perovskite solar cell according to claim 2, it is characterised in that：In stepb, it mixes
Miscellaneous upper conversion particles are Yb3+And Er3+、Ho3+、Tm3+In one kind, foreign atom number Yb：Ni=15-25:100, Er：Ni=2-
5:100, Ho:Ni=2-5:100, Tm:Ni=2-5:100, the concentration of salt solution is 0.05-0.2mol/L, the nickel oxide
A concentration of 0.5-3mg/ml in first precursor liquid.
5. a kind of preparation method of perovskite solar cell according to claim 4, it is characterised in that：The acid is salt
The mixture of one or more of acid, sulfuric acid, nitric acid.
6. a kind of preparation method of perovskite solar cell according to claim 2, it is characterised in that：In step C, institute
It is 1 to state lead halide and halogenated methyl amine molar ratio：0.75-1：3, the plumbum ion concentration in second precursor liquid is 0.5-2
mol/L。
7. a kind of preparation method of perovskite solar cell according to claim 6, it is characterised in that：The lead halide is
PbCl2、PbBr2、PbI2One or more of mixture；The halogenated methyl amine is CH3NH3Cl、CH3NH3Br or
CH3NH3I。
8. a kind of preparation method of perovskite solar cell according to claim 2, it is characterised in that：In step D, institute
State a concentration of 10-20 mg/mL of the fullerene derivate in the third precursor liquid.
9. a kind of preparation method of perovskite solar cell according to claim 8, it is characterised in that：The fullerene spreads out
Biology is PC61BM。
10. a kind of preparation method of perovskite solar cell according to claim 2, it is characterised in that：
In stepb, the NiOxHole transmission layer (2) thickness control is in 10-100nm；
In step C, perovskite absorbed layer (3) thickness control is in 400-500nm；
In step D, electron transfer layer (4) thickness control is in 50-80nm；
In step E, buffer layer (5) thickness control is in 10-100nm；
In step F, metal electrode layer (6) thickness control is in 70-200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810504600.XA CN108574046A (en) | 2018-05-24 | 2018-05-24 | A kind of perovskite solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810504600.XA CN108574046A (en) | 2018-05-24 | 2018-05-24 | A kind of perovskite solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108574046A true CN108574046A (en) | 2018-09-25 |
Family
ID=63572170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810504600.XA Pending CN108574046A (en) | 2018-05-24 | 2018-05-24 | A kind of perovskite solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108574046A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110176542A (en) * | 2019-06-11 | 2019-08-27 | 中国矿业大学 | Perovskite battery Organic-inorganic composite hole transport film and preparation method thereof |
| CN111987219A (en) * | 2020-08-25 | 2020-11-24 | 西安电子科技大学 | All-inorganic perovskite solar cell based on rare earth element doped sodium yttrium tetrafluoride layer |
| CN112018209A (en) * | 2020-08-10 | 2020-12-01 | 隆基绿能科技股份有限公司 | Perovskite-silicon heterojunction laminated solar cell and manufacturing method thereof |
| CN112186107A (en) * | 2020-09-27 | 2021-01-05 | 武汉大学 | Tin-based perovskite solar cell with hole transport layer and preparation method thereof |
| CN113736464A (en) * | 2021-08-23 | 2021-12-03 | 湖北大学 | Rare earth up-conversion nanoparticle/graphite-like phase carbon nitride composite material, battery and preparation method |
| CN114715958A (en) * | 2022-03-08 | 2022-07-08 | 华能新能源股份有限公司 | Spray pyrolysis method of nickel oxide and perovskite solar cell |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101488533A (en) * | 2009-02-26 | 2009-07-22 | 北京交通大学 | Up-conversion solar cell |
| CN101497792A (en) * | 2009-02-27 | 2009-08-05 | 东北大学 | Preparation of upper conversion fluorescent nano particle |
| CN102140692A (en) * | 2011-03-11 | 2011-08-03 | 哈尔滨工业大学 | Holmium-ytterbium-doped lithium potassium niobate monocrystal and preparation method thereof |
| CN102719797A (en) * | 2012-05-08 | 2012-10-10 | 常州天合光能有限公司 | Zinc oxide based transparent conductive membrane having up-conversion function and method for preparing same |
| CN104538192A (en) * | 2014-12-19 | 2015-04-22 | 常州大学 | Organic/inorganic hybrid perovskite battery of porous structure and preparation method thereof |
| CN105070834A (en) * | 2015-07-28 | 2015-11-18 | 华中科技大学 | Perovskite solar cell based on doped NiO hole transport layer and preparation method thereof |
| CN107093672A (en) * | 2017-04-28 | 2017-08-25 | 商丘师范学院 | The preparation method of perovskite thin film solar cell is changed on a kind of light light |
| CN107267145A (en) * | 2017-05-19 | 2017-10-20 | 河南大学 | A kind of holmium ytterbium lithium codoping titanium dioxide nano material, its preparation method and perovskite solar cell |
| CN107437586A (en) * | 2017-06-13 | 2017-12-05 | 青岛大学 | The polymer solar battery preparation method of the inorganic upper conversion nano heterojunction structure of one organic molecular species |
| CN107482122A (en) * | 2017-08-23 | 2017-12-15 | 中节能万润股份有限公司 | A kind of perovskite solar cell and preparation method |
| CN107528002A (en) * | 2017-07-04 | 2017-12-29 | 北京化工大学 | A kind of perovskite solar cell based on the insertion of dye sensitization upconverter |
| CN107994122A (en) * | 2017-11-27 | 2018-05-04 | 济南大学 | Zinc doping nickel oxide nanoparticle hole transmission layer is just putting perovskite solar cell and preparation method |
| CN108039410A (en) * | 2017-11-22 | 2018-05-15 | 河南大学 | TiO2Dopant material and its preparation method and application |
-
2018
- 2018-05-24 CN CN201810504600.XA patent/CN108574046A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101488533A (en) * | 2009-02-26 | 2009-07-22 | 北京交通大学 | Up-conversion solar cell |
| CN101497792A (en) * | 2009-02-27 | 2009-08-05 | 东北大学 | Preparation of upper conversion fluorescent nano particle |
| CN102140692A (en) * | 2011-03-11 | 2011-08-03 | 哈尔滨工业大学 | Holmium-ytterbium-doped lithium potassium niobate monocrystal and preparation method thereof |
| CN102719797A (en) * | 2012-05-08 | 2012-10-10 | 常州天合光能有限公司 | Zinc oxide based transparent conductive membrane having up-conversion function and method for preparing same |
| CN104538192A (en) * | 2014-12-19 | 2015-04-22 | 常州大学 | Organic/inorganic hybrid perovskite battery of porous structure and preparation method thereof |
| CN105070834A (en) * | 2015-07-28 | 2015-11-18 | 华中科技大学 | Perovskite solar cell based on doped NiO hole transport layer and preparation method thereof |
| CN107093672A (en) * | 2017-04-28 | 2017-08-25 | 商丘师范学院 | The preparation method of perovskite thin film solar cell is changed on a kind of light light |
| CN107267145A (en) * | 2017-05-19 | 2017-10-20 | 河南大学 | A kind of holmium ytterbium lithium codoping titanium dioxide nano material, its preparation method and perovskite solar cell |
| CN107437586A (en) * | 2017-06-13 | 2017-12-05 | 青岛大学 | The polymer solar battery preparation method of the inorganic upper conversion nano heterojunction structure of one organic molecular species |
| CN107528002A (en) * | 2017-07-04 | 2017-12-29 | 北京化工大学 | A kind of perovskite solar cell based on the insertion of dye sensitization upconverter |
| CN107482122A (en) * | 2017-08-23 | 2017-12-15 | 中节能万润股份有限公司 | A kind of perovskite solar cell and preparation method |
| CN108039410A (en) * | 2017-11-22 | 2018-05-15 | 河南大学 | TiO2Dopant material and its preparation method and application |
| CN107994122A (en) * | 2017-11-27 | 2018-05-04 | 济南大学 | Zinc doping nickel oxide nanoparticle hole transmission layer is just putting perovskite solar cell and preparation method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110176542A (en) * | 2019-06-11 | 2019-08-27 | 中国矿业大学 | Perovskite battery Organic-inorganic composite hole transport film and preparation method thereof |
| CN112018209A (en) * | 2020-08-10 | 2020-12-01 | 隆基绿能科技股份有限公司 | Perovskite-silicon heterojunction laminated solar cell and manufacturing method thereof |
| CN111987219A (en) * | 2020-08-25 | 2020-11-24 | 西安电子科技大学 | All-inorganic perovskite solar cell based on rare earth element doped sodium yttrium tetrafluoride layer |
| CN112186107A (en) * | 2020-09-27 | 2021-01-05 | 武汉大学 | Tin-based perovskite solar cell with hole transport layer and preparation method thereof |
| CN112186107B (en) * | 2020-09-27 | 2023-06-20 | 武汉大学 | Tin-based perovskite solar cell with hole transport layer and preparation method thereof |
| CN113736464A (en) * | 2021-08-23 | 2021-12-03 | 湖北大学 | Rare earth up-conversion nanoparticle/graphite-like phase carbon nitride composite material, battery and preparation method |
| CN114715958A (en) * | 2022-03-08 | 2022-07-08 | 华能新能源股份有限公司 | Spray pyrolysis method of nickel oxide and perovskite solar cell |
| CN114715958B (en) * | 2022-03-08 | 2024-04-02 | 华能新能源股份有限公司 | Spray pyrolysis method of nickel oxide and perovskite solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108574046A (en) | A kind of perovskite solar cell and preparation method thereof | |
| CN107565023B (en) | A kind of perovskite solar battery and preparation method | |
| CN104362253B (en) | All solid state perovskite microcrystalline silicon composite solar battery and preparation method thereof | |
| CN107482122B (en) | perovskite solar cell and preparation method | |
| CN104916782B (en) | Using the inversion solar battery structure and preparation method of surface phasmon effect | |
| JP4982641B2 (en) | Semiconductor layer, solar cell using the same, manufacturing method thereof, and use thereof | |
| CN107611190A (en) | A kind of perovskite solar cell resistant to bending and preparation method | |
| CN107240643B (en) | Bromo element adulterates methylamine lead iodine perovskite solar battery and preparation method thereof | |
| CN101587779B (en) | Preparing method of non-metal doped dye sensitization TiO2 nano-crystal thin film photoelectrode | |
| CN107359248B (en) | A kind of stabilization is without efficient organic solar batteries device of light bath and preparation method thereof | |
| CN108288675B (en) | Iron salt doped cyclone-OMeTAD hole transport layer and solar cell comprising same | |
| CN107221441A (en) | A kind of solar cell based on composite nanostructure light anode | |
| CN109216557A (en) | One kind being based on citric acid/SnO2Perovskite solar battery of electron transfer layer and preparation method thereof | |
| CN107204153A (en) | A kind of advertisement distributing system based on application of solar energy | |
| CN111987220A (en) | Perovskite solar cell based on down-conversion layer and preparation method | |
| CN109830603A (en) | A kind of composite electron transport layer and perovskite solar cell based on ionic liquid | |
| CN108987581A (en) | A kind of automatically cleaning perovskite solar battery and preparation method thereof | |
| CN106971852A (en) | A kind of DSSC of modified light anode structure | |
| CN106910826A (en) | New Type of Mesoporous structure perovskite solar cell and preparation method thereof | |
| CN108922971A (en) | A kind of technique of the fast lifting based on organic cavity transmission layer perovskite solar cell properties | |
| CN107170891A (en) | A kind of wide spectrum perovskite solar cell and preparation method thereof | |
| CN102013329B (en) | Method for improving optical energy conversion rate of dye sensitized solar cell | |
| CN107887169B (en) | A kind of dye-sensitized solar cell anode and preparation method thereof based on ferroelectric material | |
| CN105225839B (en) | The preparation method of a kind of high efficiency zno-based dye-sensitized solar cell anode and prepared light anode thereof | |
| CN107634144A (en) | It is a kind of inorganic organic（CuI/PEDOT:PSS）The flexible perovskite solar cell of composite hole transporting layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180925 |
|
| RJ01 | Rejection of invention patent application after publication |