CN108922971A - A kind of technique of the fast lifting based on organic cavity transmission layer perovskite solar cell properties - Google Patents
A kind of technique of the fast lifting based on organic cavity transmission layer perovskite solar cell properties Download PDFInfo
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- CN108922971A CN108922971A CN201810704055.9A CN201810704055A CN108922971A CN 108922971 A CN108922971 A CN 108922971A CN 201810704055 A CN201810704055 A CN 201810704055A CN 108922971 A CN108922971 A CN 108922971A
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- H—ELECTRICITY
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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Abstract
A kind of technique the present invention relates to fast lifting based on organic cavity transmission layer perovskite solar cell properties.A kind of preparation method of perovskite solar battery uses heat treatment to anneal to prepare hole transmission layer after coating the solution containing organic hole transport material on perovskite light-absorption layer, and wherein heat treatment temperature is 80~120 DEG C, and the processing time is 30 seconds~120 seconds.
Description
Technical field
The invention belongs to technical field of solar batteries more particularly to a kind of techniques for promoting solar cell properties, more
In particular to a kind of technique of perovskite solar battery and improving performance based on hole transmission layer.
Background technique
Organic-inorganic halide perovskite solar battery due to its superelevation efficiency and low cost, it is easy to manufacture
And it is paid high attention to.Nevertheless, the stability problem of perovskite solar battery hinders commercialized further development.
Therefore, stability is one of the important topic of perovskite solar battery research.This includes the long-time stability of device, that is,
Service life, the also stability of the preparation process including device, that is, reproducibility, repeatability.
Organic and inorganic halide perovskite material has the absorption coefficient of light high, and exciton binding energy is relatively low, and carrier moves
It is long to move high and transmission range, the optically and electrically characteristic such as bipolar transmission of electrons and holes, perovskite battery between a few years
Highest authentication efficiency has reached 23.3%.In the critical material for constituting perovskite solar battery, perovskite active layer
Quality of forming film, the selection and optimization of electron and hole transport layer are outstanding for the efficiency and stability that promote perovskite solar battery
To be important, therefore the research hotspot of always perovskite area of solar cell.
Tradition efficient plane n-i-p type perovskite solar cell generallys use Spiro-OMeTAD and passes as its hole at present
Defeated material, the intrinsic hole mobility of the material are lower, it usually needs its electrology characteristic is improved by Li salt dopping.However Li salt
Itself have certain hygroscopicity, be not sufficiently stable in atmospheric atmosphere, this be also the poor reason of perovskite stability test it
One, and then limit the industrialized development and application of perovskite battery.The crystallinity and degree of oxidation of Spiro-OMeTAD film
It is uncontrolled, need to place its performance of a couple of days competence exertion, it is therefore desirable to which the preparation process of fast lifting performance shortens battery
Production cycle reduces manufacturing cost.Further, since the unstability of Li salt dopping Spiro-OMeTAD material, but also device
The repeatability of preparation process is poor.
Summary of the invention
Present invention seek to address that using the crystallinity and oxidation of tradition Spiro-OMeTAD film reported in the literature at present
Degree is uncontrolled, and treatment temperature and time are difficult to accurately control, and easily occurs that film surface is coarse, film of low quality and technique
The repeatability problems such as poor, provide a kind of preparation method of perovskite solar battery, i.e. a kind of fast lifting is based on
The new process of organic cavity transmission layer perovskite solar cell properties.
First present invention is a kind of preparation method of perovskite solar battery, and coating is containing organic on perovskite light-absorption layer
Used after the solution of hole mobile material heat treatment anneal to prepare hole transmission layer, wherein heat treatment temperature be 80~
120 DEG C, the processing time is 30 seconds~120 seconds.
According to first invention, hole transport layer film is prepared using annealing mode, in preparation process, due to annealed
Cheng Tongchang influences charge generation/recombination kinetcs of device, and annealing heating makes additive solvent quickly volatilize, increase crystallinity and
Hole mobility.Hole transmission layer film surface prepared in accordance with the present invention is more smooth, smooth, homogeneous, has excellent
Photoelectric conversion performance.
Preferably, the organic hole transport material is Spiro-OMeTAD, PTAA, P3HTP, PEDOT:In PSS extremely
Few one kind.
Preferably, the solution containing organic hole transport material contains：Spiro-OMeTAD, bis- (fluoroform) sulphonyl
Imines lithium salts, 4- tert .-butylpyridine and cobalt complex FK209.
Preferably, the perovskite light-absorption layer is prepared via a method which：It is with metal halide and organic amine halide
Raw material prepares organic inorganic hybridization perovskite presoma；The coating of organic inorganic hybridization perovskite presoma and substrate by preparation
On.
Preferably, the perovskite light-absorption layer is Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3、MAPbI3In extremely
Few one kind.
Second invention is a kind of perovskite solar battery prepared according to any of the above-described preparation method.
According to the second invention, hole transmission layer film surface in perovskite solar battery is more smooth, smooth, quality
Uniformly, therefore the perovskite solar battery has excellent photoelectric conversion performance.
The perovskite solar battery can successively include from bottom to top：Transparent conductive substrate, electron transfer layer, perovskite
Light-absorption layer, hole transmission layer, metal are to electrode.
According to the present invention, by carrying out of short duration annealing to hole transmission layer, prepared film surface is smooth, matter
Higher, good crystallinity is measured, there is high photoelectric conversion performance.Annealing can increase the fill factor of device, and hole is promoted to pass
The oxidation process of defeated material such as Spiro-OMeTAD, to promote the performance of battery.Preparation method consumption provided by the present invention
When short, less energy-consuming, high production efficiency and simple process, preparation condition is mild, easily operated, has a extensive future.
Detailed description of the invention
Fig. 1 shows the scanning electron microscope (SEM) photograph of Spiro-OMeTAD film made from embodiment and comparative example.
Fig. 2 shows the steady-state fluorescence spectrum of Spiro-OMeTAD film made from embodiment and comparative example.
Fig. 3 shows the perovskite solar battery based on Spiro-OMeTAD film made from embodiment and comparative example
J-V curve.
Specific embodiment
The present invention is further illustrated below in conjunction with attached drawing and following embodiments, it should be appreciated that attached drawing and following embodiments
It is merely to illustrate the present invention, is not intended to limit the present invention.
A kind of technique the present invention relates to fast lifting based on organic cavity transmission layer perovskite solar cell properties.This
Invention prepares the hole transport layer film in perovskite solar battery using annealing method.
In one embodiment, heat treatment is used after the solution containing organic hole transport material is coated on perovskite light-absorption layer
It anneals to prepare hole transmission layer.
Organic hole transport material includes but is not limited to Spiro-OMeTAD ([(the 4- methoxyl group of N, N- bis- of 2,2', 7,7'- tetra-
Phenyl) amino] -9,9'- spiral shell, two fluorenes), PTAA (poly- [bis- (4- phenyl) (2,4,6- trimethylphenyl) amine]), P3HT (it is poly- (3- oneself
Base thiophene)), PEDOT:PSS (poly- 3,4- ethylenedioxy thiophene:Poly styrene sulfonate) etc., particularly preferred Spiro-OMeTAD.
Solution containing organic hole transport material can also contain organic additive in addition to containing organic hole transport material,
Such as organic lithium salt, TBP (4- tert .-butylpyridine) and cobalt complex FK209 etc..Organic lithium salt is, for example, bis- (fluoroform) sulphurs
Acid imide lithium salts etc..The molar ratio of organic hole transport material and organic lithium salt may be, for example, 1：(0.2~2).Organic hole passes
The molar ratio of defeated material and TBP may be, for example, 1：(1~3).The molar ratio of organic hole transport material and FK209 may be, for example, 1：
(0.05~0.3).In one example, the solution containing organic hole transport material is prepared by the following method：By Spiro-
The chlorobenzene solution of OMeTAD, the acetonitrile solution of bis- (fluoroform) sulfimide lithium salts, TBP, FK209 are uniformly mixed, and are contained
The solution of organic hole transport material.The concentration of the chlorobenzene solution of Spiro-OMeTAD can be 30~100mg/mL.Bis- (fluoroforms
Alkane) concentration of acetonitrile solution of sulfimide lithium salts can be 200~800mg/mL.
The method that the solution containing organic hole transport material is coated on perovskite light-absorption layer is not particularly limited, such as can
To use the solution methods such as spin-coating method, infusion method.In spin-coating method, revolving speed can be 1000~6000rpm, spin-coating time can for 10~
60s。
Heat treatment mode can heat for film is placed in hot plate.Heat treatment temperature can be 80~120 DEG C.If being lower than 80
DEG C, then hole mobile material can not be fully oxidized in a short time；If being higher than 120 DEG C, may have to perovskite thin film broken
Bad effect, causes the decomposition of perovskite light absorbent, and cause the evaporation of hole mobile material.It is highly preferred that heat treatment temperature
It is 90~110 DEG C.
Heat treatment time can be 30 seconds~120 seconds.If heat treatment time is too short, hole mobile material is unable to fully oxygen
Change；If heat treatment time is too long, it may cause the evaporation of hole mobile material and destroy hole transmission layer, and may be to calcium
Titanium ore film has destruction, causes the decomposition of perovskite light absorbent.It is highly preferred that heat treatment time is 30 seconds~60 seconds.
Heat treatment environment is preferably dry environment, can reduce electricity in this way to avoid the lithium salts moisture absorption in hole mobile material
Pond performance.
Preparation method through the invention, can be with fast lifting based on organic cavity transmission layer perovskite solar battery
Performance.
The chemical formula of perovskite light-absorption layer is represented by ABX3, wherein monovalent cation or mixed-cation can be used in A, packet
It includes but is not limited to CH3NH3+、NH2- CH=NH2 +、Cs+、Li+、C4H9NH3 +、CH6N3 +、Na+、K+Deng.Pb can be used in B2+、Sn2+、Ge2 +、Co2+、Fe2+、Mn2+、Cu2+And Ni2+At least one of, i.e., B can be one of these ions, be also possible in these ions
Any two or more mixed structure.X can use Cl-、Br-、I-、SCN-、BF4 -At least one of, that is, X can be list
One ion is also possible to hybrid ionic, such as the mixing of any two kinds of ions.For example, the chemical composition includes but unlimited
In methylamine lead iodine, carbonamidine lead iodine, methylamine carbonamidine lead iodine mixture, carbonamidine caesium lead iodine, methylamine carbonamidine caesium lead iodine etc..Preferably, calcium
Titanium ore light-absorption layer is selected from Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3、MAPbI3At least one of.Wherein FA is indicated
NH2- CH=NH2 +, MA expression CH3NH3 +。MAPbI3It is most common perovskite light absorbent, preparation is easy, has excellent performance steady
It is fixed.And Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3With higher photoelectric conversion efficiency (20% or more) and preferably
Device durability.
Perovskite light-absorption layer is preferably smooth, can make the hole transmission layer being prepared in thereon more smooth in this way
Densification is conducive to improve boundary to improve hole mobile material and perovskite light-absorption layer and the interface quality with metal to electrode
Face carrier separation efficiency and battery conversion efficiency.
Perovskite light-absorption layer (perovskite thin film) can for example be prepared using vapour deposition process or solution-deposition method.From reduction
Preparation cost and from the point of view of simplifying preparation process, preferably solution-deposition method.For example, a step solwution method, two can be used
The methods of footwork obtains perovskite thin film.
By taking a step solwution method as an example, stirring synthesis ABX in solvent is dispersed by the halide of the halide of A and B3Presoma
Solution, and by the ABX3Precursor solution coats (such as spin coating) in forming ABX in substrate3Film.
Obtain ABX3After film, preferably without heat treatment, directly in ABX3Coating contains organic hole transport material on film
Solution, then carry out above-mentioned annealing again.Technique is on the one hand simplified in this way, does not need double annealing, while a step is moved back
Fire facilitates hole mobile material and penetrates into part perovskite light-absorption layer, promotes the carrier separation on interface.
In one embodiment, perovskite solar battery successively includes from bottom to top：Transparent conductive substrate, electron-transport
Layer, perovskite light-absorption layer, hole transmission layer, metal are to electrode.
The material of transparent conductive electrode can be rigidity or flexible, rigid such as FTO glass, ito glass, it is flexible such as with
Polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyimides (PI), polycarbonate (PC),
Thin polymer films such as polyaniline, polypyrrole etc. are the oxidation films such as metal system (sputtering type or metal gate net type) or the ITO of substrate
Transparent conductive film.Its thickness can be 0.1~10mm.
The composition of electron transfer layer includes but is not limited to dense oxide titanium, zinc oxide, cobalt oxide, nickel oxide or its doping
At least one of object.Electron transfer layer can be made using the methods of spin coating, spraying, blade coating, magnetron sputtering, atomic layer deposition
It is standby.
Perovskite light-absorption layer and preparation method thereof can be as described above.
Hole transmission layer and preparation method thereof can be as described above.
Metal can be gold, silver, copper, aluminium etc. to electrode.It can evaporation metal, can also be in hole to electrode on the hole transport layer
Transport layer and metal are to being deposited MoO between electrode3Equal metal oxides are middle layer.
In the disclosure, hole transport layer film is prepared using annealing mode, in preparation process, due to annealing heating mistake
Cheng Zhong, sample are heated more uniform, and heat treatment time is shorter and is easier to accurately control the processing time, and at the annealing of short period
Reason can achieve the effect that promote device performance.Therefore film surface is more smooth, particle is larger, crystal boundary is less, better crystallinity degree,
Oxidation sufficiently, can be collected effectively compound with transporting holes, blocking electronics and hole.It is prepared by the method for the present invention
High performance thin film and perovskite solar battery, photoelectric conversion efficiency with higher are suitable for large-scale production and application.
Moreover, the heat treatment mode in the disclosure is easier to realize, and heat treatment time greatly shortens, especially suitable for flowing water
The large-scale production and application of perovskite solar battery are realized in line operation.
The disclosure is reached using the photoelectric conversion efficiency of the resulting perovskite solar battery of heat treatment process
16.47%, it is high compared with conventional process mode transfer efficiency 14.02%, and the preparation time of hole transmission layer greatly shortens.This says
Bright, heat treatment process prepares the technique of hole transmission layer, and under the premise of guaranteeing battery efficiency, the processing time is greatly shortened, more
Suitable for large-scale production and application.
Enumerate embodiment further below with the present invention will be described in detail.It will similarly be understood that following embodiment is served only for this
Invention is further described, and should not be understood as limiting the scope of the invention, those skilled in the art is according to this hair
Some nonessential modifications and adaptations that bright above content is made all belong to the scope of protection of the present invention.Following examples are specific
Technological parameter etc. is also only an example in OK range, i.e. those skilled in the art can be done properly by the explanation of this paper
In the range of select, and do not really want to be defined in hereafter exemplary specific value.
Embodiment 1
(1) preparation of not thermally treated hole transmission layer film.It is cleaned by ultrasonic FTO with lye, deionized water, acetone respectively
Glass 30 minutes, drying, ultraviolet irradiation was handled 15 minutes.Then TiO is prepared on FTO glass substrate2Compacted zone, presoma
Solution solvent is ethyl alcohol, including following component：Tetraisopropyl titanate (0.3mol/L), acetylacetone,2,4-pentanedione (0.45mol/L), salt
Acid (0.09mol/L), water (1.8mol/L).Precursor solution is drawn, is added dropwise on the FTO substrate cleaned up, spreads solution
The full entire surface FTO, is formed a film using spin-coating method, spin speed 3000rpm, time 20s.Then 510 DEG C of sintering in Muffle furnace
30min.Then, 461 milligrams of lead iodide (PbI are measured2), 159 milligrams of CH3NH3I powder, 78 milligrams of dimethyl sulfoxides are mixed in 600 millis
Gram n,N-Dimethylformamide (DMF) stirs 2 hours at room temperature, forms CH3NH3PbI3Perovskite precursor solution.With before this
Drive liquid solution is spin coating liquid, prepares perovskite thin film, spin speed 5000rpm, time 20s, wherein at the 6th second using spin-coating method
Clock is added dropwise on 0.5 milliliter of ether to the matrix of rotation.In resulting perovskite thin film spin coating hole transmission layer solution, ingredient
For：The 2,2' of 72.3mg/mL, the chlorobenzene solution of 7,7'- tetra- [N, N- bis- (4- methoxyphenyl) amino] -9,9'- spiral shell, two fluorenes, packet
Include the acetonitrile solution of bis- (fluoroform) sulfimide lithium salts of the 520mg/mL of 20 μ L and the 4- tert .-butylpyridine and 29 μ of 20 μ L
L cobalt complex (FK209) is used as additive, revolving speed 4000rpm, time 20s.
(2) film prepared by step (1) is placed on hot plate, temperature setting is 100 DEG C, heat treatment time 30 seconds, is obtained
Spiro-OMeTAD hole transport layer film.
(3) perovskite solar battery is prepared.120nm thickness Ag is finally deposited on the sample that step (2) obtains to electrode,
Obtain CH3NH3PbI3Perovskite solar battery.
Comparative example 1
(1) preparation of not thermally treated hole transmission layer film.With embodiment 1.
(2) perovskite thin film prepared by step (1) is placed in air and is placed 10 minutes, obtain the hole Spiro-OMeTAD
Transmit layer film.
(3) perovskite solar battery is prepared.With embodiment 1.
Fig. 1 shows the SEM photograph of Spiro-OMeTAD film made from embodiment 1 and comparative example 1, wherein (a) is real
Example 1 is applied, (b) is comparative example 1.It will be seen from figure 1 that the Spiro-OMeTAD film surface of embodiment 1 is more flat compared with comparative example 1
It is whole and fine and close, illustrate the spin coating hole mobile material on perovskite thin film, re-annealing processing will not generate brokenly perovskite thin film
Bad and prepared Spiro-OMeTAD film surface appearance is more preferably.Fig. 2 shows made from embodiment 1 and comparative example 1
The steady-state fluorescence curve of spectrum of spiro-OMeTAD film, it can be seen that the fluorescence peak intensity of embodiment 1 is substantially less than comparative example
1, illustrate after being made annealing treatment to hole mobile material, the enhancing of interface carrier Extracting Ability, fluorescent quenching degree is bigger.Use mark
Solar simulator (AM1.5,100mW/cm of pseudotype xenon lamp2), measure the open-circuit voltage Voc, short of perovskite solar battery
Road current density, J sc, fill factor FF and efficiency eta.Fig. 3 shows and is based on made from embodiment 1 and comparative example 1
The J-V curve of the perovskite solar battery of Spiro-OMeTAD film, it can be seen that the perovskite solar battery of embodiment 1
Photoelectric conversion efficiency be 16.47%, much higher than the 14.02% of comparative example.
Embodiment 2
(1) preparation of not thermally treated hole transmission layer film.With embodiment 1.
(2) film prepared by step (1) is placed on hot plate, temperature setting is 80 DEG C, heat treatment time 120 seconds, is obtained
Spiro-OMeTAD hole transport layer film.
(3) perovskite solar battery is prepared.With embodiment 1.
Embodiment 3
(1) preparation of not thermally treated hole transmission layer film.With embodiment 1.
(2) film prepared by step (1) is placed on hot plate, temperature setting is 120 DEG C, heat treatment time 30 seconds, is obtained
Spiro-OMeTAD hole transport layer film.
(3) perovskite solar battery is prepared.With embodiment 1.
Comparative example 2
(1) preparation of not thermally treated hole transmission layer film.With embodiment 1.
(2) film prepared by step (1) is placed on hot plate, temperature setting is 150 DEG C, heat treatment time 300 seconds, is obtained
Spiro-OMeTAD hole transport layer film.
(3) perovskite solar battery is prepared.With embodiment 1.
The photoelectric conversion parameter of perovskite solar battery made from table 1 embodiment 1-3 and comparative example 1-2
The present invention prepares hole transmission layer, the photoelectric conversion efficiency of gained perovskite solar battery using annealing method
Compared with conventional method height.Moreover, heat treatment time greatly shortens, especially suitable for pipelining, is conducive to related heat treatment and sets
The large-scale production and application of perovskite solar battery are realized in standby exploitation.
Claims (8)
1. a kind of preparation method of perovskite solar battery, which is characterized in that coating contains organic sky on perovskite light-absorption layer
Heat treatment is used to anneal to prepare hole transmission layer after the solution of hole transport materials, wherein heat treatment temperature is 80~120
DEG C, the processing time is 30 seconds~120 seconds.
2. preparation method according to claim 1, which is characterized in that the organic hole transport material is Spiro-
OMeTAD,PTAA,P3HT,PEDOT:At least one of PSS.
3. preparation method according to claim 1 or 2, which is characterized in that the solution containing organic hole transport material
Contain：Spiro-OMeTAD, bis- (fluoroform) sulfimide lithium salts, 4- tert .-butylpyridine and cobalt complex FK209.
4. preparation method according to any one of claim 1 to 3, which is characterized in that the perovskite light-absorption layer passes through
Following method preparation：Using metal halide and organic amine halide as raw material, organic inorganic hybridization perovskite presoma is prepared；It will
The organic inorganic hybridization perovskite presoma of preparation is coated in substrate.
5. preparation method according to any one of claim 1 to 4, which is characterized in that the perovskite light-absorption layer is one
Class ABX3The light absorbent of perovskite structure, wherein A is monovalent cation, preferably CH3NH3 +、NH2- CH=NH2 +、Cs+、Li+、
C4H9NH3 +、CH6N3 +、Na+、K+At least one of, B is bivalent cation, preferably Pb2+、Cs+、Sn2+、Ge2+、Co2+、Fe2+、
Mn2+、Cu2+、Ni2+At least one of, X Cl-、Br-、I-、SCN-、BF4 -At least one of.
6. preparation method according to claim 5, which is characterized in that the perovskite light-absorption layer is Cs 0.05
(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3、MAPbI3At least one of.
7. a kind of perovskite solar battery of preparation method preparation according to any one of claim 1 to 6.
8. perovskite solar battery according to claim 7, which is characterized in that perovskite solar battery is from bottom to top
Successively include：Transparent conductive substrate, electron transfer layer, perovskite light-absorption layer, hole transmission layer, metal are to electrode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113066930A (en) * | 2021-03-12 | 2021-07-02 | 南开大学 | Method for rapidly oxidizing spiro-OMeTAD and perovskite solar cell prepared by using method |
| CN113644204A (en) * | 2021-08-11 | 2021-11-12 | 华侨大学 | Perovskite solar cell based on amino compound interface modification layer and preparation method thereof |
| CN116914031A (en) * | 2023-09-11 | 2023-10-20 | 西安电子科技大学 | Preparation method of semitransparent and trans-type all-inorganic perovskite solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465994A (en) * | 2014-12-09 | 2015-03-25 | 厦门惟华光能有限公司 | Perovskite solar cell preparation method based on full-coating process |
| CN105742494A (en) * | 2016-02-29 | 2016-07-06 | 苏州大学 | Perovskite solar cell and preparation method thereof |
| CN106935709A (en) * | 2017-05-05 | 2017-07-07 | 中北大学 | Carbon cloth base back electrode and solar cell and preparation method thereof |
-
2018
- 2018-06-30 CN CN201810704055.9A patent/CN108922971B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465994A (en) * | 2014-12-09 | 2015-03-25 | 厦门惟华光能有限公司 | Perovskite solar cell preparation method based on full-coating process |
| CN105742494A (en) * | 2016-02-29 | 2016-07-06 | 苏州大学 | Perovskite solar cell and preparation method thereof |
| CN106935709A (en) * | 2017-05-05 | 2017-07-07 | 中北大学 | Carbon cloth base back electrode and solar cell and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| YANLING FANG等: "Impact of annealing on spiro-OMeTAD and corresponding solid-state dye sensitized solar cells", 《PHYS. STATUS SOLIDI A》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113066930A (en) * | 2021-03-12 | 2021-07-02 | 南开大学 | Method for rapidly oxidizing spiro-OMeTAD and perovskite solar cell prepared by using method |
| CN113644204A (en) * | 2021-08-11 | 2021-11-12 | 华侨大学 | Perovskite solar cell based on amino compound interface modification layer and preparation method thereof |
| CN116914031A (en) * | 2023-09-11 | 2023-10-20 | 西安电子科技大学 | Preparation method of semitransparent and trans-type all-inorganic perovskite solar cell |
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