CN108574011A - Vertical super-junction bilateral diffusion metal oxide semiconductor device and preparation method thereof - Google Patents
Vertical super-junction bilateral diffusion metal oxide semiconductor device and preparation method thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 230000002146 bilateral effect Effects 0.000 title claims abstract description 41
- 238000009792 diffusion process Methods 0.000 title claims abstract description 41
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 41
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 10
- 239000013612 plasmid Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 238000000407 epitaxy Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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Abstract
The present invention relates to a kind of vertical super-junction bilateral diffusion metal oxide semiconductor device, including multiple vertical super-junction bilateral diffusion metal oxide semiconductor units, the vertical super-junction bilateral diffusion metal oxide semiconductor unit includes：Substrate；First type epitaxial layer, is formed in the side of the substrate；Second type epitaxial layer is formed in the first type epitaxial layer, and the width of the second type epitaxial layer gradually increases towards the direction far from the substrate.Technical solution through the invention, the present invention can reduce influence of the variation to breakdown voltage of Qp/Qn, improve the electric property of semiconductor devices by the way that the width of p-type epitaxial layer to be set as gradually increasing towards the direction far from substrate.And under same breakdown voltage, Qp/Qn can be to change in the range of bigger, therefore the requirement for manufacture craft is just relatively easy, is easy to reduce cost of manufacture.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of vertical super-junction bilateral diffusion metal oxide semiconductor devices
Part and a kind of production method of vertical super-junction bilateral diffusion metal oxide semiconductor device.
Background technology
Current super-junction semiconductor device, breakdown voltage BV can generate big ups and downs with the variation of Qp/Qn,
In, Qp is the quantity of electric charge of P epitaxial layers, and Qn is the quantity of electric charge of N epitaxial layers.And the larger BV of fluctuating range is to super-junction semiconductor device
Harmful effect it is also larger.
Variation in order to reduce Qp/Qn causes the degree of fluctuation of BV, and a kind of mode is by improving technique in the related technology
Making precision in processing procedure accurately controls the ratio of Qp and Qn, but this making for needing precision very high and detection device, at
This is excessively high；Another way is to reduce the total amount of Qp and Qn, to reduce the variation degree of Qp/Qn, but in order to obtain enough
Element internal resistance, need improve device area or volume, be unfavorable for the lightening of device.
Invention content
A kind of vertical super-junction bilateral diffusion metal oxide semiconductor device of present invention offer and preparation method thereof, to solve phase
Deficiency in the technology of pass.
According to a first aspect of the embodiments of the present invention, a kind of vertical super-junction bilateral diffusion metal oxide semiconductor device is provided
Part, including multiple vertical super-junction bilateral diffusion metal oxide semiconductor units, the vertical super-junction bilateral diffusion metal oxide half
Conductor element includes：
Substrate；
First type epitaxial layer, is formed in the side of the substrate；
Second type epitaxial layer is formed in the first type epitaxial layer, and the width of the second type epitaxial layer is towards separate
The direction of the substrate gradually increases.
Optionally, the doping concentration of the second type epitaxial layer gradually rises towards the direction far from the substrate.
Optionally, the thickness of the second type epitaxial layer is less than the thickness of the first type epitaxial layer.
Optionally, at least one side wall to connect with the first type epitaxial layer of the second type epitaxial layer, and it is described
The surface angle of substrate is α, wherein 0 °<α<90°.
Optionally, 80 °≤α<90°.
According to a second aspect of the embodiments of the present invention, a kind of vertical super-junction bilateral diffusion metal oxide semiconductor device is provided
Production method, including：
The first type epitaxial layer is formed in the side of substrate；
Groove is formed in side of the first type epitaxial layer far from the substrate, wherein the width of the groove is towards remote
Direction from the substrate gradually increases；
Second type epitaxial layer is formed in the groove.
Optionally, the second type epitaxial layer that formed in the groove includes：
Notch filling semiconductor base material from the bottom of the groove to the groove, and mixed into the semiconductor substrate
Enter foreign particle, to form the second type epitaxial layer in the groove, wherein mix the concentration of foreign particle from described recessed
The notch of the bottom of slot to the groove gradually rises.
Optionally, the second type epitaxial layer that formed in the groove includes：
When filling m layers of semiconductor substrate into the groove, with m concentration into the m layers of semiconductor substrate
Mix foreign particle；
Wherein, 1≤m≤N, N ＞ 1, m and N are integer, and the depth of the groove is equal to the thickness of N layers of semiconductor substrate；
The m concentration increases as m increases.
Optionally, the side formation groove in the first type epitaxial layer far from the substrate includes：
The side of the substrate is etched by etchant gas, and gradually reduces in the etchant gas and corrodes particle
Concentration.
Optionally, the depth of the groove is less than the thickness of the first type epitaxial layer.
By above-described embodiment it is found that the present invention by by the width of p-type epitaxial layer be set as towards far from substrate direction by
It is cumulative big, influence of the variation to breakdown voltage of Qp/Qn can be reduced, the electric property of semiconductor devices is improved.And in phase
With under breakdown voltage, Qp/Qn can be to change in the range of bigger, therefore the requirement for manufacture craft is just relatively easy, is easy to
Reduce cost of manufacture.
It should be understood that above general description and following detailed description is only exemplary and explanatory, not
It can the limitation present invention.
Description of the drawings
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the present invention
Example, and be used to explain the principle of the present invention together with specification.
Fig. 1 is a kind of knot of vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Structure schematic diagram.
Fig. 2 shows in vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
The relation schematic diagram of Qp and Qp in the related technology.
Fig. 3 shows electric in vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Field distribution schematic diagram.
Fig. 4 shows that field distribution is illustrated in vertical super-junction bilateral diffusion metal oxide semiconductor device in the related technology
Figure.
Fig. 5 shows the relationship of breakdown voltage according to an embodiment of the invention and Qp/Qn and punctures in the related technology
The comparison schematic diagram of the relationship of voltage and Qp/Qn.
Fig. 6 is another vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Structural schematic diagram.
Fig. 7 is a kind of system of vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Make the schematic flow diagram of method.
Fig. 8 to Figure 10 shows a kind of vertical super-junction bilateral diffusion metal oxide semiconductor device of one embodiment of the invention
The specific schematic flow diagram of the production method of part.
Figure 11 is a kind of vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Concrete structure schematic diagram.
Figure 12 is another vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Production method schematic flow diagram.
Figure 13 is another vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Production method schematic flow diagram.
Specific implementation mode
Example embodiments are described in detail here, and the example is illustrated in the accompanying drawings.Following description is related to
When attached drawing, unless otherwise indicated, the same numbers in different drawings indicate the same or similar elements.Following exemplary embodiment
Described in embodiment do not represent and the consistent all embodiments of the present invention.On the contrary, they be only with it is such as appended
The example of the consistent device and method of some aspects being described in detail in claims, of the invention.
Fig. 1 is a kind of knot of vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Structure schematic diagram, which may include multiple vertical super-junction bilateral diffusion metal oxide semiconductor units, such as Fig. 1 institutes
Show, the vertical super-junction bilateral diffusion metal oxide semiconductor unit includes：
Substrate 1；
First type epitaxial layer 2 is formed in side (such as the side of substrate top surface or the substrate lower surface of the substrate 1
Side)；
Second type epitaxial layer 3 is formed in the first type epitaxial layer 2, and the width of the second type epitaxial layer 3 is towards remote
Direction from the substrate 1 gradually increases.
In one embodiment, substrate can be N+Substrate or P+Substrate, for example, the first type epitaxial layer be N-type epitaxy layer,
When second type epitaxial layer is p-type epitaxial layer, substrate can be N+Substrate；On the contrary, be p-type epitaxial layer in the first type epitaxial layer,
When second type epitaxial layer is N-type epitaxy layer, substrate can be P+Substrate.Following embodiment is mainly N-type in the first type epitaxial layer
Epitaxial layer, second type epitaxial layer be p-type epitaxial layer in the case of illustrate.
In one embodiment, according to relational expression Qp=Pdoping*Wp, wherein Qp is the quantity of electric charge in p-type epitaxial layer,
Pdoping is the doping concentration of p-type epitaxial layer, and Wp is the width of p-type epitaxial layer.By setting the width of p-type epitaxial layer to
Gradually increase towards far from the direction of substrate, is equivalent on vertical substrates direction and p-type epitaxial layer is divided into multilayered structure, every layer
The quantity of electric charge in p-type epitaxial layer gradually increases towards the direction far from substrate.
Fig. 2 shows the relationships of Qp and Qp in the related technology in semiconductor devices according to an embodiment of the invention to show
It is intended to.
As shown in Fig. 2, in the related art, Qp on the directions AA ' (direction perpendicular to substrate and towards substrate) not
Variation, and according to the present embodiment, Qp is gradually reduced on the directions AA '.It should be noted that Qp can it is continuous as shown in Figure 2 and
Linearly reduce, can also be arranged as required to be continuous but non-linearly reduce or discontinuous reduction, such as stepwise
Reduce.
Fig. 3 shows field distribution schematic diagram in semiconductor devices according to an embodiment of the invention.Fig. 4 shows phase
Field distribution schematic diagram in semiconductor devices in the technology of pass.
Since Qp successively decreases on the directions AA ', according to superjunction theory and Poisson's equation, field distribution is such as schemed in semiconductor devices
Shown in 3.And in the related art, since Qp does not successively decrease in the directions AA ', according to superjunction theory and Poisson's equation, semiconductor device
Field distribution is as shown in Figure 4 in part.
And electric field is being equal to the area that every dotted line is surrounded with reference axis in voltage namely Fig. 3 and Fig. 4 apart from upper integral
The area in domain corresponds to breakdown voltage.Comparison diagram 3 and with Fig. 4 it is found that the value of Qp/Qn is drawn from 0.9 fluctuation to 1.1 process in Fig. 3
Play the fluctuating range of breakdown voltage, the process of value than Qp/Qn in Fig. 4 from 0.9 fluctuation to 1.1 causes the fluctuation width of breakdown voltage
Degree wants small, namely relative to the relevant technologies, influence of the variation to breakdown voltage of Qp/Qn can be reduced according to the present embodiment, is carried
The electric property of high semiconductor devices.
Fig. 5 shows the relationship of breakdown voltage according to an embodiment of the invention and Qp/Qn and punctures in the related technology
The comparison schematic diagram of the relationship of voltage and Qp/Qn.
Influence by the variation of Qp/Qn in this present embodiment to breakdown voltage is smaller relative to the relevant technologies, therefore, for
The structure of same breakdown voltage, the present embodiment can allow Qp/Qn in the larger context relative to structure in the related technology
Variation.As shown in figure 5, in the case where breakdown voltage is 600V, Qp/Qn in the related technology is only capable of -17.2% to 15%
Variation in range, and according to the present embodiment, Qp/Qn can then change in -17.7% to 24% range, variation range bigger,
Therefore the requirement for manufacture craft is just relatively easy, is easy to reduce cost of manufacture.
Optionally, the doping concentration of the second type epitaxial layer gradually rises towards the direction far from the substrate.
In one embodiment, due to Qp=Pdoping*Wp, P is reduced along the directions AA ' in the embodiment shown in fig. 1
On the basis of the width of type epitaxial layer, the Pdoping of p-type epitaxial layer can be further reduced along the directions AA ', namely adulterate dense
Degree, such as the foreign particle of incorporation can be boron.To reinforce on the directions AA ' reduce Qp amplitude, convenient for along AA ' more
In short distance range, meet the requirement that amplitude is reduced for Qp, in order in the semiconductor devices for meeting embodiment illustrated in fig. 1
Performance basis on, the smaller semiconductor devices of manufactured size.
Fig. 6 is another vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Structural schematic diagram, the thickness of the second type epitaxial layer 3 are less than the thickness of the first type epitaxial layer 2.
It, can be by second when in one embodiment, due to forming second type epitaxial layer in the first type epitaxial layer
Groove is formed in type epitaxial layer, then fills the material of the first type epitaxial layer into groove again to realize.And groove is usually logical
What overetch was formed, if the thickness of second type epitaxial layer is equal to the thickness of the first type epitaxial layer, then being difficult to avoid meeting to substrate
It causes accidentally to etch.Therefore according to the present embodiment, by the way that the thickness of second type epitaxial layer is set smaller than the first type epitaxial layer
Thickness, the groove setting without that will accommodate second type epitaxial layer in the first type epitaxial layer is too deep, recessed in formation so as to avoid
The mistake of substrate is corroded during slot, and then ensures the structural behaviour of substrate, is further ensured that the structure of semiconductor devices entirety
Performance.
Optionally, at least one side wall to connect with the first type epitaxial layer of the second type epitaxial layer, and it is described
The surface angle of substrate is α, wherein 0 °<α<90°.
In one embodiment, as shown in Figure 1, by the way that the surface angle of at least one side wall and substrate is set as sharp
Angle, it is ensured that the width of second type epitaxial layer gradually increases towards the direction (namely the directions A ' A) far from substrate.It is shown in Fig. 1
The case where surface angle of two side walls and substrate is acute angle, can essentially to be arranged as required to any of which angle be
Acute angle, another angle are right angle.
Optionally, 50 °≤α<90°.
In one embodiment, it is contemplated that actual process requirements, when α is smaller, such as α=20 °, p-type epitaxial layer and N
The sidewall slope angle that type epitaxial layer connects is larger, then in the case where the height of p-type epitaxial layer and N-type epitaxy layer determines, P
Type epitaxial layer can occupy larger space in N-type epitaxy layer, and directly embodiment is exactly the cross-sectional width meeting of p-type epitaxial layer in Fig. 1
With increased dramatically far from substrate, then in order to adapt to the shape of p-type epitaxial layer, the cross-sectional width of N-type epitaxy layer can be with
It is strongly reduced far from substrate.
Therefore p-type epitaxial layer is arranged according to the α of the present embodiment and side wall that N-type epitaxy layer connects, it is ensured that can
More p-type epitaxial layer is set in N-type epitaxy layer, to form enough vertical super-junction bilateral diffusion metal oxide semiconductors
Unit has ensured the performance of vertical super-junction bilateral diffusion metal oxide semiconductor device.
Optionally, 80 °≤α<90°.
In one embodiment, angle is further set greater than to the acute angle equal to 80 °, it is ensured that p-type epitaxial region
The space occupied is smaller in N-type epitaxial region, and then more p-type epitaxial regions can be arranged in N-type epitaxial region, to be formed
More vertical super-junction bilateral diffusion metal oxide semiconductor units, and then improve vertical super-junction bilateral diffusion metal oxide and partly lead
The performance of body device.
Fig. 7 is a kind of system of vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Make the schematic flow diagram of method.As shown in fig. 7, this method includes：
Step S71 forms the first type epitaxial layer 2, as shown in Figure 8 in the side of substrate 1；
Step S72 forms groove 4, wherein the groove in side of the first type epitaxial layer 2 far from the substrate 1
4 width gradually increases towards the direction far from the substrate 1, as shown in Figure 9；
Step S73 forms second type epitaxial layer, as shown in Figure 10 in the groove.
After forming p-type epitaxial layer, the areas Pbody 5, N can also be continuously formed as shown in figure 11+Source region 6, gate insulation
Layer 9, source electrode 7 and grid 8, and can also the further blanket dielectric layer (not shown) outside source electrode and grid, such as
BPSG (boron-phosphorosilicate glass).
Figure 12 is another vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Production method schematic flow diagram.As shown in figure 12, on the basis of embodiment illustrated in fig. 10, the shape in the groove
Include at second type epitaxial layer：
Step S731, the notch filling semiconductor base material from the bottom of the groove to the groove, and partly led to described
Foreign particle is mixed in body base material, to form the second type epitaxial layer in the groove, wherein mix the dense of foreign particle
Degree gradually rises from the bottom of the groove to the notch of the groove.
Optionally, the second type epitaxial layer that formed in the groove includes：
When filling m layers of semiconductor substrate into the groove, with m concentration into the m layers of semiconductor substrate
Mix foreign particle；
Wherein, 1≤m≤N, N ＞ 1, m and N are integer, and the depth of the groove is equal to the thickness of N layers of semiconductor substrate；
The m concentration increases as m increases.
In one embodiment, it can be gradually risen to semiconductor during the filling semiconductor base material into groove
The foreign particle mixed in base material, such as when filling first layer semiconductor substrate in a groove, it can be with the first concentration to first
Foreign particle is mixed in layer semiconductor substrate, the thickness of obtained semiconductor substrate is the 1/N of depth of groove, and then is forming the
When two layers of semiconductor substrate, foreign particle is mixed into second layer semiconductor substrate with the second concentration, obtained semiconductor substrate
Thickness be depth of groove 2/N, wherein the second concentration be more than the first concentration, and so on, until formed N layers of semiconductor substrate
Groove is filled and led up, N layers of base material therein i.e. the second epitaxial layer, to realize the doping concentration of second type epitaxial region away from lining
The direction at bottom is gradually increased.
In one embodiment, the concentration of particle is adulterated in addition to can change according to above-described embodiment phase step type, it can also
It is arranged as required to as linear change, such as with the filling semiconductor base material into groove, can change according to the rule of c=kt
The concentration of particle is adulterated, wherein c is the concentration for adulterating particle, and t is the duration of the filling semiconductor base material into groove, and k is
Positive number.
Figure 13 is another vertical super-junction bilateral diffusion metal oxide semiconductor device according to an embodiment of the invention
Production method schematic flow diagram.As shown in figure 13, described outside first type on the basis of embodiment illustrated in fig. 10
Prolonging side formation groove of the layer far from the substrate includes：
Step S721 is etched the side of the substrate by etchant gas, and gradually reduces the etchant gas
The concentration of middle corrosion particle.
In one embodiment, groove can be formed by dry carving technology, and with the progress of etching, continuously decreases corruption
The concentration of particle is lost, so that with the progress of etching, the width of the groove etched in the first type epitaxial region is increasingly
It is small.
Optionally, the depth of the groove is less than the thickness of the first type epitaxial layer.
In one embodiment, can according to the thickness of etching speed and the first epitaxial layer come control stop etching when
Between, to ensure that the depth of groove is less than the thickness of the first type epitaxial layer.
About the method in above-described embodiment, wherein each step executes the concrete mode of operation in dependency structure
It is described in detail in embodiment, explanation will be not set forth in detail herein.
Those skilled in the art will readily occur to its of the present invention after considering specification and putting into practice disclosure disclosed herein
Its embodiment.The present invention is directed to cover the present invention any variations, uses, or adaptations, these modifications, purposes or
Person's adaptive change follows the general principle of the present invention and includes undocumented common knowledge in the art of the invention
Or conventional techniques.The description and examples are only to be considered as illustrative, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be understood that the invention is not limited in the precision architectures for being described above and being shown in the accompanying drawings, and
And various modifications and changes may be made without departing from the scope thereof.The scope of the present invention is limited only by the attached claims.
Claims (10)
1. a kind of vertical super-junction bilateral diffusion metal oxide semiconductor device, including multiple vertical super-junction bilateral diffusion metal oxides
Semiconductor unit, which is characterized in that the vertical super-junction bilateral diffusion metal oxide semiconductor unit includes：
Substrate；
First type epitaxial layer, is formed in the side of the substrate；
Second type epitaxial layer is formed in the first type epitaxial layer, and the width of the second type epitaxial layer is towards far from described
The direction of substrate gradually increases.
2. vertical super-junction bilateral diffusion metal oxide semiconductor device according to claim 1, which is characterized in that described
The doping concentration of two type epitaxial layers gradually rises towards the direction far from the substrate.
3. vertical super-junction bilateral diffusion metal oxide semiconductor device according to claim 1, which is characterized in that described
The thickness of two type epitaxial layers is less than the thickness of the first type epitaxial layer.
4. vertical super-junction bilateral diffusion metal oxide semiconductor device according to any one of claim 1 to 3, feature
It is, at least one side wall to connect with the first type epitaxial layer of the second type epitaxial layer, the surface with the substrate
Angle is α, wherein 0 °<α<90°.
5. vertical super-junction bilateral diffusion metal oxide semiconductor device according to claim 4, which is characterized in that 80 °≤α
<90°。
6. a kind of production method of vertical super-junction bilateral diffusion metal oxide semiconductor device, which is characterized in that including：
The first type epitaxial layer is formed in the side of substrate；
Groove is formed in side of the first type epitaxial layer far from the substrate, wherein the width of the groove is towards far from institute
The direction for stating substrate gradually increases；
Second type epitaxial layer is formed in the groove.
7. production method according to claim 6, which is characterized in that described to form second type epitaxial layer in the groove
Including：
Notch filling semiconductor base material from the bottom of the groove to the groove, and mix into the semiconductor substrate miscellaneous
Plasmid, to form the second type epitaxial layer in the groove, wherein mix the concentration of foreign particle from the groove
The notch of bottom to the groove gradually rises.
8. production method according to claim 7, which is characterized in that described to form second type epitaxial layer in the groove
Including：
When filling m layers of semiconductor substrate into the groove, mixed into the m layers of semiconductor substrate with m concentration
Foreign particle；
Wherein, 1≤m≤N, N ＞ 1, m and N are integer, and the depth of the groove is equal to the thickness of N layers of semiconductor substrate；It is described
M concentration increases as m increases.
9. the production method according to any one of claim 6 to 8, which is characterized in that described in the first type extension
Side of the layer far from the substrate forms groove：
The side of the substrate is etched by etchant gas, and gradually reduces and corrodes the dense of particle in the etchant gas
Degree.
10. the production method according to any one of claim 6 to 8, which is characterized in that the depth of the groove is less than institute
State the thickness of the first type epitaxial layer.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004072068A (en) * | 2002-06-14 | 2004-03-04 | Fuji Electric Holdings Co Ltd | Semiconductor device |
| US20130087851A1 (en) * | 2011-10-06 | 2013-04-11 | Denso Corporation | Semiconductor device with vertical semiconductor element |
| CN105845713A (en) * | 2015-01-29 | 2016-08-10 | 富士电机株式会社 | Semiconductor device |
-
2017
- 2017-03-08 CN CN201710134554.4A patent/CN108574011A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004072068A (en) * | 2002-06-14 | 2004-03-04 | Fuji Electric Holdings Co Ltd | Semiconductor device |
| US20130087851A1 (en) * | 2011-10-06 | 2013-04-11 | Denso Corporation | Semiconductor device with vertical semiconductor element |
| CN105845713A (en) * | 2015-01-29 | 2016-08-10 | 富士电机株式会社 | Semiconductor device |
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Application publication date: 20180925 |