CN108562840B - Temperature-sensitive electrical parameter calibration method - Google Patents
Temperature-sensitive electrical parameter calibration method Download PDFInfo
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- CN108562840B CN108562840B CN201810439117.8A CN201810439117A CN108562840B CN 108562840 B CN108562840 B CN 108562840B CN 201810439117 A CN201810439117 A CN 201810439117A CN 108562840 B CN108562840 B CN 108562840B
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Abstract
A temperature sensitive electrical parameter calibration method comprises the following steps: (1) the control electrode of the tested device and the current flow into the electrode short circuit; (2) heating current is introduced between a current inflow electrode and a current outflow electrode of the device to be measured, and the voltage of a control electrode and the current outflow electrode of the device to be measured at the moment is measured; (3) releasing the short circuit between the control electrode of the tested device and the current inflow electrode, and applying voltage between the control electrode and the current outflow electrode, wherein the applied voltage value is the voltage between the control electrode and the current outflow electrode measured in the previous step; (4) the current inflow electrode and the current outflow electrode are connected with measuring current, the magnitude of the measuring current is adjusted, and meanwhile, the current inflow electrode and the current outflow electrode are large enough, and the power consumption generated by the measuring current is small enough; (5) and (3) carrying out temperature sensitivity calibration on the voltage of the current inflow electrode and the current outflow electrode of the tested device by using the voltage of the control electrode and the current outflow electrode obtained in the step (2) and the measured current obtained in the step (4) to obtain a temperature sensitive electrical parameter curve.
Description
Technical Field
The invention relates to a temperature sensitive electrical parameter calibration method and a junction temperature measurement method of a power semiconductor device.
Background
Thermal Sensing Electrical Parameter (TSEP) methods are the most commonly used type of method in the measurement of junction temperature of power semiconductor devices. The thermosensitive inductance parameter refers to the electrical parameter of the device with a certain functional relation with the temperature, and the junction temperature of the device can be inversely calculated by measuring the thermosensitive inductance parameter through calibrating the relation between the thermosensitive inductance parameter and the temperature in advance. When the power semiconductor device is used for measuring thermal resistance and durability tests, the junction temperature is indirectly measured by a thermosensitive electrical parameter sensing method. To avoid generating additional temperature rise, TSEP is typically a voltage signal generated by a small measurement current (≦ 100mA) flowing through the device. Commonly used thermal sensing parameters include drain-source voltage, collector-emitter saturation voltage, threshold voltage, diode forward voltage, and the like. For silicon-based unipolar devices such as field effect transistors, because the forward on-resistance is small, the drain-source voltage generated by small measurement current is extremely weak, less than 10mV, and accurate measurement is difficult, the drain-source voltage is generally not adopted as a thermosensitive inductance parameter, but a threshold voltage with a higher amplitude or a body diode forward voltage is selected as the thermosensitive inductance parameter.
However, for some non-silicon-based unipolar devices, such as silicon carbide-based (SiC) field effect transistors, due to the fact that the gate oxide layer of the non-silicon-based unipolar device has significant trap charge-discharge characteristics, parameters of the device are affected by temperature, current and gate voltage to cause severe drift, and TSEP in the actual measurement process no longer conforms to a function relationship calibrated in advance, so that a large error exists in the measurement of junction temperature of the SiC-based field effect transistor by using the existing thermosensitive inductive parameters.
Disclosure of Invention
The invention aims to overcome the defect that the prior art can not accurately measure the junction temperature of some devices with obvious electrical parameter drift, such as silicon carbide-based field effect transistors, and provides a temperature-sensitive electrical parameter calibration method. The invention is also applicable to silicon-based devices in which the drift of the electrical parameters is not significant.
The invention applies low control electrode voltage and high measuring current, thereby generating high voltage signals and overcoming the defects that the voltage signals generated by the existing method are weak and cannot be accurately measured; in addition, applying a constant and relatively low control voltage can also minimize its effect on electrical parameter drift.
The invention comprises the following steps:
(1) the control electrode of the tested device and the current flow into the electrode short circuit;
(2) heating current is introduced between a current inflow electrode and a current outflow electrode of the device to be measured, and the voltage of a control electrode and the current outflow electrode of the device to be measured at the moment is measured;
(3) releasing the short circuit between the control electrode of the tested device and the current inflow electrode, and applying voltage between the control electrode and the current outflow electrode, wherein the applied voltage value is the voltage between the control electrode and the current outflow electrode measured in the previous step;
(4) the current inflow electrode and the current outflow electrode are connected with measuring current, the magnitude of the measuring current is adjusted, and meanwhile, the current inflow electrode and the current outflow electrode are large enough, and the power consumption generated by the measuring current is small enough;
(5) and (3) respectively using the voltage of the control electrode and the current outflow electrode obtained in the step (2) and the measured current obtained in the step (4) to calibrate the temperature sensitivity of the voltage of the current inflow electrode and the current outflow electrode of the device to be measured, namely changing the junction temperature of the device to be measured, and measuring the voltages of the current inflow electrode and the current outflow electrode at different junction temperatures to obtain a temperature sensitive electrical parameter curve.
And according to the curve of the voltage of the current inflow electrode and the current outflow electrode along with the change of the temperature, which is obtained in the step, the junction temperature of the power semiconductor device can be accurately measured.
Drawings
FIG. 1 is a schematic diagram of a field effect transistor structure;
FIG. 2 is a schematic diagram of a control voltage and measurement current test;
FIG. 3 is a schematic diagram of a temperature sensitive electrical parameter calibration circuit;
FIG. 4 is a graph of electrical parameter temperature sensitivity.
Detailed Description
The present invention will be further described with reference to the drawings and the detailed description of the preferred embodiments by taking a field effect transistor as an example.
Fig. 1 is a schematic diagram of a typical field effect transistor DUT having three electrodes in common, a control electrode G, a current inflow electrode D, and a current outflow electrode S. When a positive voltage is applied between the control electrode G and the current drain electrode S, the impedance between the current drain electrode S and the current drain electrode D is greatly reduced, thereby forming a current path and conducting the current.
The circuit for measuring the temperature-sensitive electrical parameters of the field effect transistor DUT used in the embodiment of the invention is shown in FIG. 2, and the measuring circuit consists of the field effect transistor DUT to be measured, a controller resistor Rg, a voltage source Vg, a measuring current source Im, a heating current source Ih, a first switch S1, a second switch S2, a third switch S3 and a fourth switch S4.
As shown in fig. 2, in the measuring circuit used in the present invention, a control electrode resistor Rg and a fourth switch S4 are connected in series between a control electrode G of a field effect transistor DUT to be measured and an anode of a voltage source Vg, and a cathode of the voltage source Vg is connected to a current outflow electrode S of the field effect transistor DUT; both ends of the third switch S3 are connected to the control electrode G and the current inflow electrode D, respectively; a second switch S2 is connected in series between the anode of the measuring current source Im and the current inflow pole D, and the cathode of the measuring current source Im is connected with the current outflow pole S; a first switch S1 is connected in series between the positive electrode of the heating current source Ih and the current inflow electrode D, and the negative electrode of the heating current source Ih is connected to the current outflow electrode S.
The temperature sensitive electrical parameter calibration method provided by the embodiment of the invention comprises the following steps:
(1) under normal temperature conditions, as shown in fig. 2, the third switch S3 is closed first, and the control electrode G and the current inflow electrode D of the field effect transistor DUT are short-circuited;
(2) then closing the first switch S1, applying a heating current to the field effect transistor DUT by the heating current source Ih, measuring and recording the voltage Vgs between the control electrode G and the current outflow electrode S at the moment, and after the measurement is finished, opening the first switch S1;
(3) opening the third switch S3, releasing the short circuit between the control electrode G and the current inflow electrode D, then closing the fourth switch S4, and adjusting the amplitude of the voltage source Vg to be equal to the voltage Vgs of the control electrode and the current outflow electrode measured in the step (2);
(4) then, the second switch S2 is closed, the measurement current source Im applies measurement current to the field effect transistor DUT, and the measurement current is adjusted from small to large, so that on one hand, the current inflow pole and the current outflow pole voltage Vds are large enough, such as larger than 200mV, to improve the measurement accuracy; on the other hand, the power consumption generated by measuring the current is controlled to be small enough, such as less than 500mW, so as to avoid generating additional temperature rise and influencing the accuracy of calibrating the temperature-sensitive electrical parameters;
(5) as shown in fig. 3, placing the field effect transistor DUT in a temperature control device, such as an environmental test chamber or a liquid cooling plate, adjusting the output voltage of the voltage source Vg to be equal to the voltage Vgs between the control electrode and the current outflow electrode obtained in step (2), and adjusting the output current of the measurement current source Im to be equal to the measurement current obtained in step (4), at this time, the measurement current flows in from the current inflow electrode D and flows out from the current outflow electrode S to generate the required voltage Vds between the current inflow electrode and the current outflow electrode, and finally changing the junction temperature of the field effect transistor DUT by the temperature control device, and measuring and recording the Vds at different junction temperatures to obtain the change curve of the voltage Vds between the current inflow electrode and the current outflow electrode along with the temperature, as shown in.
By using the field effect transistor DUT thermosensitive inductance parameter curve obtained in the steps, the accurate measurement of the junction temperature of the device can be realized.
Claims (1)
1. A temperature sensitive electrical parameter calibration method is characterized in that: the temperature sensitive electrical parameter calibration method comprises the following steps:
(1) in order to reduce the influence of the voltage of a control electrode on the drift of an electrical parameter, the control electrode of a tested device and current flow into an electrode short circuit;
(2) heating current is introduced between a current inflow electrode and a current outflow electrode of the tested device, and the voltage of the control electrode and the current outflow electrode of the tested device at the moment is measured, wherein the voltage is the low control electrode voltage required by the heating current;
(3) releasing the short circuit between the control electrode of the tested device and the current inflow electrode, and applying constant low voltage between the control electrode and the current outflow electrode, wherein the applied voltage value is the voltage of the control electrode and the current outflow electrode measured in the previous step;
(4) the current inflow electrode and the current outflow electrode are connected with measuring current, the magnitude of the measuring current is adjusted, and meanwhile, the current inflow electrode and the current outflow electrode are large enough, and the power consumption generated by the measuring current is small enough;
(5) and (3) respectively using the voltage of the control electrode and the current outflow electrode obtained in the step (2) and the measured current obtained in the step (4) to carry out temperature sensitivity calibration on the voltage of the current inflow electrode and the current outflow electrode of the tested device so as to obtain a temperature sensitive electrical parameter curve.
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