CN108558389B - High-resistance layer slurry for voltage-sensitive resistor chip and preparation method thereof - Google Patents
High-resistance layer slurry for voltage-sensitive resistor chip and preparation method thereof Download PDFInfo
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- 239000002002 slurry Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000011787 zinc oxide Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910000410 antimony oxide Inorganic materials 0.000 claims abstract description 23
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 23
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 23
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 23
- 239000002245 particle Substances 0.000 claims abstract description 22
- 238000001354 calcination Methods 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000002994 raw material Substances 0.000 claims abstract description 14
- 238000000498 ball milling Methods 0.000 claims abstract description 13
- 238000005303 weighing Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 44
- 239000001856 Ethyl cellulose Substances 0.000 claims description 20
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 20
- 229920001249 ethyl cellulose Polymers 0.000 claims description 20
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 239000011230 binding agent Substances 0.000 claims description 15
- 238000009775 high-speed stirring Methods 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 5
- 238000007873 sieving Methods 0.000 claims description 5
- 238000012795 verification Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000006255 coating slurry Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3294—Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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Abstract
The invention discloses a novel high-resistance layer slurry for a piezoresistor and a preparation method thereof, wherein the high-resistance layer slurry mainly comprises the following raw materials in percentage by mass: 5-10% of antimony oxide, 8-12% of silicon oxide, 7-10% of bismuth oxide and 70-75% of zinc oxide, wherein the preparation method comprises the steps of weighing, calcining, ball milling, verifying and the like, and the prepared high-resistance layer slurry of the piezoresistor disc has good fluidity, moderate viscosity, particle size controlled between 0.5-1.2 mu m, lower particle size, convenience in roll coating operation in a coating process, smooth side surface of the coated piezoresistor disc, uniform surface and good consistency; meanwhile, the 2ms square wave and 4/10 mus heavy current impact resistance of the voltage-sensitive resistance chip produced by the process are obviously improved, and the residual voltage level of 8/20 mus is reduced.
Description
Technical Field
The invention belongs to the technical field of high-voltage electrical varistor ceramic materials, particularly relates to manufacture of high-resistance layer slurry of a varistor of a lightning arrester, and particularly relates to high-resistance layer slurry of a varistor sheet and a preparation method thereof.
Background
The voltage dependent resistor disc is an important working component of the lightning arrester of the power grid protection equipment, and due to the fact that the voltage dependent resistor disc has nonlinear volt-ampere characteristics, the voltage dependent resistor disc presents low resistance when in overvoltage and presents high resistance when in normal power frequency voltage, voltage between terminals of the lightning arrester is limited, and normal operation of the power grid equipment is protected. In order to prevent the voltage-sensitive resistance sheet from flashover under overvoltage and heavy current, a high-resistance layer with good performance is attached to the side surface of the voltage-sensitive resistance sheet, and a high-resistance insulating layer on the side surface of the voltage-sensitive resistance sheet is an important group part for manufacturing the voltage-sensitive resistance sheet and is one of the keys for developing and producing the high-performance voltage-sensitive resistance sheet. In the prior art, the high-resistance layer is attached to the side surface of a varistor blank and reacts with and permeates the varistor blank in the high-temperature sintering process, so that the high-resistance layer coating material uses the same raw material as the varistor blank as much as possible, and the expansion coefficient between the high-resistance layer coating material and the varistor blank is ensured to be adaptive.
With the wide use of the GIS of the electric power system, the development direction of the tank-type lightning arrester tends to be miniaturized, in order to improve the market competitiveness of products, the varistor sheets with the original specification cannot meet the requirement, and the varistor sheets with the same specification are required to have larger square wave capacity of 2ms and higher large-current tolerance capacity of 4/10 mus, so that a new technical scheme has to be found for producing high-resistance layer slurry of the varistor sheets matched with the varistor sheets.
High-resistance layer slurry applied in a coating procedure of the existing zinc oxide varistor in the manufacturing process all contains a small amount of lithium ions for promoting the permeation of the high-resistance layer, but the high-resistance layer is poor in consistency due to the fact that the content of the lithium ions is small, the 2ms square wave performance of the varistor is improved, the 4/10 mu s large current tolerance capacity of the varistor is reduced, the residual voltage of 8/20 mu s lightning waves is obviously improved, and the protection characteristic and the safe operation of the zinc oxide varistor are not facilitated.
Disclosure of Invention
In order to overcome the defects in the prior art, the high-resistance layer slurry of the voltage-sensitive resistor disc and the preparation method thereof provided by the invention have the advantages that on the basis of meeting the 2ms square wave performance of the resistor disc, the large-current impact resistance of the resistor disc is also improved, and the residual voltage level is reduced.
In order to achieve the purpose, the invention adopts the technical scheme that: a high-resistance layer slurry for a voltage-sensitive resistor chip is mainly composed of the following raw materials in percentage by mass: 5-10% of antimony oxide, 8-12% of silicon oxide, 7-10% of bismuth oxide and 70-75% of zinc oxide, wherein the main component of the antimony oxide is more than or equal to 99.80%, the water content is less than or equal to 0.5%, the particle size is 0.8-1.3D 50/mum, the screen residue is 0.1% (325 meshes), the main component of the silicon oxide is more than or equal to 99.00%, the water content is less than or equal to 6% (ignition), the particle size is 5.0-8.0D 50/mum, the screen residue is 0.1% (200 meshes), the main component of the bismuth oxide is more than or equal to 99.00%, the water content is less than or equal to 0.3%, the particle size is 3.0-6.0D 50/mum, the screen residue is 0.1% (200 meshes), the main component of the zinc oxide is more than or equal to 99.70%, the water content is less than or equal to 0.3%, the particle size is 0.42-0.55.
Furthermore, the specification of the antimony oxide is nano-scale, the specification of the silicon oxide is pressure-sensitive and special, the specification of the bismuth oxide is pressure-sensitive and special, and the specification of the zinc oxide is super-grade pure.
Further, the mass percentage of the raw material and the binder solution is 115.96%, the binder solution comprises ethyl cellulose and ethanol, the specification of the ethyl cellulose is analytical grade, and the specification of the ethanol is industrial top grade.
Further, the mass percent of the ethyl cellulose and the ethanol is 9.3%, and the density of the ethanol is 0.789 g/ml.
Further, the raw materials comprise the following components in percentage by mass: 8.6 percent of antimony oxide, 10.4 percent of silicon oxide, 9.7 percent of bismuth oxide and 71.3 percent of zinc oxide.
A preparation method of high-resistance layer slurry of a piezoresistor sheet comprises the following steps:
(1) weighing: weighing the materials according to the predetermined formula weight;
(2) and (3) calcining: preparing the prepared oxide powder according to the proportion: pouring 5-10% of antimony oxide, 8-12% of silicon oxide, 7-10% of bismuth oxide and 70-75% of zinc oxide into a mixer, uniformly mixing, and then putting into a high-temperature tunnel kiln for calcination, wherein the temperature control of the calcination temperature zone 1, the temperature zone 2, the temperature zone 3, the temperature zone 4, the temperature zone 5, the temperature zone 6, the temperature zone 7, the temperature zone 8, the temperature zone 9, the temperature zone 10, the temperature zone 11, the temperature zone 12, the temperature zone 13, the temperature zone 14 and the temperature zone 15 is respectively 180 +/-10 ℃, 261 +/-20 ℃, 330 +/-20 ℃, 398 +/-20 ℃, 472 +/-20 ℃, 546 +/-20 ℃, 650 +/-20 ℃, 730 +/-25 ℃, 810 +/-25 ℃, 750 +/-25 ℃, 690 +/-25 ℃ and 620 +/-35 ℃, and keeping the temperature of each temperature zone for 1 hour;
(3) ball milling: cooling the calcined powder to room temperature, crushing, sieving, and adding a binder solution in proportion, namely slowly adding ethyl cellulose and ethanol into a small high-speed stirring ball mill; stirring in a small high-speed stirring ball mill for 180min, stopping stirring, and measuring the slurry until the particle size of the slurry is within the range of 0.5-1.2 mu m and the viscosity is between 40-50 Pa.s; otherwise, the ball milling time is prolonged.
(4) And (3) verification: the prepared voltage-sensitive resistor is applied to a coating process of a voltage-sensitive resistor chip, and finally the electrical performance of the voltage-sensitive resistor chip is verified.
Further, in the step (3), the ball milling time is controlled to be more than 180 min.
Compared with the prior art, the invention has the beneficial effects that: according to the component content formula provided by the invention, the obtained high-resistance layer slurry has good fluidity, moderate viscosity, particle size controlled between 0.5-1.2 mu m and lower particle size, is convenient for roll coating operation in a coating process, and the coated varistor sheet valve plate has smooth side surface, uniform surface and good consistency; meanwhile, the 2ms square wave and 4/10 mus heavy current impact resistance of the voltage-sensitive resistance chip produced by the process are obviously improved, and the residual voltage level of 8/20 mus is reduced.
Detailed Description
The following will be described in detail with reference to the technical solutions in the embodiments of the present invention:
example 1: a high-resistance layer slurry for a voltage-sensitive resistor chip is mainly composed of the following raw materials in percentage by mass: 10% of antimony oxide, 12% of silicon oxide, 9% of bismuth oxide and 66% of zinc oxide, wherein the main component of the antimony oxide is more than or equal to 99.80%, the water content is less than or equal to 0.5%, the particle size is 0.8-1.3D 50/mum, the residue on sieve is 0.1% (325 meshes), the main component of the silicon oxide is more than or equal to 99.00%, the water content is less than or equal to 6% (ignition), the particle size is 5.0-8.0D 50/mum, the residue on sieve is 0.1% (200 meshes), the main component of the bismuth oxide is more than or equal to 99.00%, the water content is less than or equal to 0.3%, the particle size is 3.0-6.0D 50/mum, the residue on sieve is 0.1% (200 meshes), the main component of the zinc oxide is more than or equal to 99.70%, the water content is less than or equal to 0.3; the specification of the antimony oxide is nano-scale, the specification of the silicon oxide is pressure-sensitive special, the specification of the bismuth oxide is pressure-sensitive special, and the specification of the zinc oxide is super grade pure; the mass percentage of the raw material to the binder solution is 115.96%, the binder solution comprises ethyl cellulose and ethanol, the specification of the ethyl cellulose is analytical grade, the specification of the ethanol is industrial top grade, and the mass percentage of the ethyl cellulose to the ethanol is 9.3%.
A preparation method of high-resistance layer slurry of a piezoresistor sheet comprises the following steps:
(1) weighing: weighing the materials according to the predetermined formula weight;
(2) and (3) calcining: preparing the prepared oxide powder according to the proportion: 10% of antimony oxide, 12% of silicon oxide, 9% of bismuth oxide and 66% of zinc oxide are poured into a mixer, the mixture is uniformly mixed and then is put into a high-temperature tunnel kiln for calcination, the temperature control of the corresponding temperature areas of a calcination temperature zone 1, a calcination temperature zone 2, a temperature zone 3, a temperature zone 4, a temperature zone 5, a temperature zone 6, a temperature zone 7, a temperature zone 8, a temperature zone 9, a temperature zone 10, a temperature zone 11, a temperature zone 12, a temperature zone 13, a temperature zone 14 and a temperature zone 15 is respectively 180 +/-10 ℃, 261 +/-20 ℃, 330 +/-20 ℃, 398 +/-20 ℃, 472 +/-20 ℃, 546 +/-20 ℃, 650 +/-20 ℃, 730 +/-25 ℃, 810 +/-25 ℃, 750 +/-25 ℃, 690 +/-25 ℃ and 620 +/-35 ℃, and each temperature zone is;
(3) ball milling: cooling the calcined 3000g of powder to room temperature, crushing and sieving, and then adding a binder solution in proportion, namely 220g of ethyl cellulose and 3000ml of ethanol (the converted mass is 2367g, the density is 0.789g/ml, the temperature is 20 ℃), and slowly adding the mixture into a small high-speed stirring ball mill; stirring in a small high-speed stirring ball mill for 180min, stopping stirring, and measuring the slurry until the particle size of the slurry is within the range of 0.5-1.2 mu m and the viscosity is between 40-50 Pa.s; otherwise, prolonging the ball milling time;
(4) and (3) verification: the prepared voltage-sensitive resistor is applied to a coating process of a voltage-sensitive resistor chip, and finally the electrical performance of the voltage-sensitive resistor chip is verified.
Example 2: a high-resistance layer slurry for a voltage-sensitive resistor chip is mainly composed of the following raw materials in percentage by mass: 6% of antimony oxide, 9% of silicon oxide, 7% of bismuth oxide and 75% of zinc oxide, wherein the main component of the antimony oxide is more than or equal to 99.80%, the water content is less than or equal to 0.5%, the particle size is 0.8-1.3D 50/mum, the residue on sieve is 0.1% (325 meshes), the main component of the silicon oxide is more than or equal to 99.00%, the water content is less than or equal to 6% (ignition), the particle size is 5.0-8.0D 50/mum, the residue on sieve is 0.1% (200 meshes), the main component of the bismuth oxide is more than or equal to 99.00%, the water content is less than or equal to 0.3%, the particle size is 3.0-6.0D 50/mum, the residue on sieve is 0.1% (200 meshes), the main component of the zinc oxide is more than or equal to 99.70%, the water content is less than or equal to 0.3; the specification of the antimony oxide is nano-scale, the specification of the silicon oxide is pressure-sensitive special, the specification of the bismuth oxide is pressure-sensitive special, and the specification of the zinc oxide is super grade pure; the mass percentage of the raw material to the binder solution is 115.96%, the binder solution comprises ethyl cellulose and ethanol, the specification of the ethyl cellulose is analytical grade, the specification of the ethanol is industrial top grade, and the mass percentage of the ethyl cellulose to the ethanol is 9.3%.
A preparation method of high-resistance layer slurry of a piezoresistor sheet comprises the following steps:
(1) weighing: weighing the materials according to the predetermined formula weight;
(2) and (3) calcining: preparing the prepared oxide powder according to the proportion: 6% of antimony oxide, 9% of silicon oxide, 7% of bismuth oxide and 75% of zinc oxide are poured into a mixer, the mixture is uniformly mixed and then is put into a high-temperature tunnel kiln for calcination, the temperature control of the corresponding temperature control of a temperature zone 1, a temperature zone 2, a temperature zone 3, a temperature zone 4, a temperature zone 5, a temperature zone 6, a temperature zone 7, a temperature zone 8, a temperature zone 9, a temperature zone 10, a temperature zone 11, a temperature zone 12, a temperature zone 13, a temperature zone 14 and a temperature zone 15 of the calcination is respectively 180 +/-10 ℃, 261 +/-20 ℃, 330 +/-20 ℃, 398 +/-20 ℃, 472 +/-20 ℃, 546 +/-20 ℃, 650 +/-20 ℃, 730 +/-25 ℃, 810 +/-25 ℃, 750 +/-25 ℃, 690 +/-25 ℃ and 620 +/-35 ℃, and each temperature zone;
(3) ball milling: cooling the calcined 3000g of powder to room temperature, crushing and sieving, and then adding a binder solution in proportion, namely slowly adding 220g of ethyl cellulose and 3000ml of ethanol (the converted mass is 2367g, the density is 0.789g/ml, and the temperature is 20 ℃) into a small-sized high-speed stirring ball mill; stirring in a small high-speed stirring ball mill for 180min, stopping stirring, and measuring the slurry until the particle size of the slurry is within the range of 0.5-1.2 mu m and the viscosity is between 40-50 Pa.s; otherwise, prolonging the ball milling time;
(4) and (3) verification: the prepared voltage-sensitive resistor is applied to a coating process of a voltage-sensitive resistor chip, and finally the electrical performance of the voltage-sensitive resistor chip is verified.
Preferred embodiment 3: a high-resistance layer slurry for a voltage-sensitive resistor chip is mainly composed of the following raw materials in percentage by mass: 8.6% of antimony oxide, 10.4% of silicon oxide, 9.7% of bismuth oxide and 71.3% of zinc oxide, wherein the main component of the antimony oxide is more than or equal to 99.80%, the water content is less than or equal to 0.5%, the particle size is 0.8-1.3D 50/mum, the residue on sieve is 0.1% (325 meshes), the main component of the silicon oxide is more than or equal to 99.00%, the water content is less than or equal to 6% (ignition), the particle size is 5.0-8.0D 50/mum, the residue on sieve is 0.1% (200 meshes), the main component of the bismuth oxide is more than or equal to 99.00%, the water content is less than or equal to 0.3%, the particle size is 3.0-6.0D 50/mum, the residue on sieve is 0.1% (200 meshes), the main component of the zinc oxide is more than or equal to 99.70%, the water content is less than or equal to 0.3; the specification of the antimony oxide is nano-scale, the specification of the silicon oxide is pressure-sensitive special, the specification of the bismuth oxide is pressure-sensitive special, and the specification of the zinc oxide is super grade pure; the mass percentage of the raw material to the binder solution is 115.96%, the binder solution comprises ethyl cellulose and ethanol, the specification of the ethyl cellulose is analytical grade, the specification of the ethanol is industrial top grade, and the mass percentage of the ethyl cellulose to the ethanol is 9.3%.
A preparation method of high-resistance layer slurry of a piezoresistor sheet comprises the following steps:
(1) weighing: weighing the materials according to the predetermined formula weight;
(2) and (3) calcining: preparing the prepared oxide powder according to the proportion: 8.6 percent of antimony oxide, 10.4 percent of silicon oxide, 9.7 percent of bismuth oxide and 71.3 percent of zinc oxide are poured into a mixer, the mixture is uniformly mixed and then is put into a high-temperature tunnel kiln for calcination, the temperature control of the calcination temperature zone 1, the temperature zone 2, the temperature zone 3, the temperature zone 4, the temperature zone 5, the temperature zone 6, the temperature zone 7, the temperature zone 8, the temperature zone 9, the temperature zone 10, the temperature zone 11, the temperature zone 12, the temperature zone 13, the temperature zone 14 and the temperature zone 15 is respectively 180 +/-10 ℃, 261 +/-20 ℃, 330 +/-20 ℃, 398 +/-20 ℃, 472 +/-20 ℃, 546 +/-20 ℃, 650 +/-20 ℃, 730 +/-25 ℃, 810 +/-25 ℃, 750 +/-25 ℃, 690 +/-25 ℃ and 620 +/-35 ℃, and each temperature zone is insulated for 1 hour;
(3) ball milling: cooling the calcined 3000g of powder to room temperature, crushing and sieving, and then adding a binder solution in proportion, namely 220g of ethyl cellulose and 3000ml of ethanol (the converted mass is 2367g, the density is 0.789g/ml, the temperature is 20 ℃), and slowly adding the mixture into a small high-speed stirring ball mill; stirring in a small high-speed stirring ball mill for 180min, stopping stirring, and measuring the slurry until the particle size of the slurry is within the range of 0.5-1.2 mu m and the viscosity is between 40-50 Pa.s; otherwise, prolonging the ball milling time;
(4) and (3) verification: the prepared voltage-sensitive resistor is applied to a coating process of a voltage-sensitive resistor chip, and finally the electrical performance of the voltage-sensitive resistor chip is verified.
By comparing the piezoresistor discs with phi 32, phi 42, phi 45, phi 71, phi 115/42 and phi 128, experiments prove that the performance test parameters of the original high-resistance layer slurry and the high-resistance layer slurry are as shown in the following table 1
Table 1 comparative reference table for electrical parameters after coating with high resistance layer
Comparing table 1, it is known that the 2ms square wave discharge withstand capacity of the varistor coated with the high-resistance layer is improved, the 4/10 mus high-current withstand capacity is enhanced, and the 8/20 mus residual voltage is also reduced. The high-resistance layer coating slurry is adjusted on the basis of the original formula, and compared with the original technology, the provided high-resistance layer sensitive resistor disc ensures the normal use of the lightning arrester for GIS miniaturization for the smart grid. Through the test, the high resistance layer of coating combines firmly with the varistor side, and the application temperature is high and ageing-resistant, has enlarged the application range of varistor, will have better industrialization prospect along with the market to the huge demand of resistant heavy current varistor.
The foregoing is directed to embodiments of the present application and it is understood that various modifications and enhancements may be made by those skilled in the art without departing from the principles of the application and are intended to be included within the scope of the application.
Claims (6)
1. The preparation method of the high-resistance layer slurry of the pressure-sensitive resistor disc is characterized by mainly comprising the following raw materials in percentage by mass: 5-10% of antimony oxide, 8-12% of silicon oxide, 7-10% of bismuth oxide and 70-75% of zinc oxide, wherein the main component of the antimony oxide is more than or equal to 99.80%, the water content is less than or equal to 0.5%, the grain size is 0.8-1.3D 50/mum and 0.1% of 325-mesh screen residue, the main component of the silicon oxide is more than or equal to 99.00%, the water content after ignition is less than or equal to 6%, the grain size is 5.0-8.0D 50/mum and 0.1% of 200-mesh screen residue, the main component of the bismuth oxide is more than or equal to 99.00%, the water content is less than or equal to 0.3%, the grain size is 3.0.0-6.0D 50/mum and 0.1% of 200-mesh screen residue, the main component of the zinc oxide is more than or equal to 99.70%, the water content is less than or equal to 0.3%, the grain size is 0.42; the preparation method comprises the following steps:
(1) weighing: weighing the materials according to the predetermined formula weight;
(2) and (3) calcining: preparing the prepared oxide powder according to the proportion: pouring 5-10% of antimony oxide, 8-12% of silicon oxide, 7-10% of bismuth oxide and 70-75% of zinc oxide into a mixer, uniformly mixing, and then putting into a high-temperature tunnel kiln for calcination, wherein the temperature control of the calcination temperature zone 1, the temperature zone 2, the temperature zone 3, the temperature zone 4, the temperature zone 5, the temperature zone 6, the temperature zone 7, the temperature zone 8, the temperature zone 9, the temperature zone 10, the temperature zone 11, the temperature zone 12, the temperature zone 13, the temperature zone 14 and the temperature zone 15 is respectively 180 +/-10 ℃, 261 +/-20 ℃, 330 +/-20 ℃, 398 +/-20 ℃, 472 +/-20 ℃, 546 +/-20 ℃, 650 +/-20 ℃, 730 +/-25 ℃, 810 +/-25 ℃, 750 +/-25 ℃, 690 +/-25 ℃ and 620 +/-35 ℃, and keeping the temperature of each temperature zone for 1 hour;
(3) ball milling: cooling the calcined powder to room temperature, crushing, sieving, and adding a binder solution in proportion, namely slowly adding ethyl cellulose and ethanol into a small high-speed stirring ball mill; stirring in a small high-speed stirring ball mill for 180min, stopping stirring, and measuring the slurry until the particle size of the slurry is within the range of 0.5-1.2 mu m and the viscosity is between 40-50 Pa.s; otherwise, prolonging the ball milling time;
(4) and (3) verification: the prepared slurry is applied to the coating process of the voltage sensitive resistor disc to verify the electrical performance of the voltage sensitive resistor disc.
2. The method for preparing the high resistance layer slurry of the varistor as claimed in claim 1, wherein the antimony oxide is nanoscale, the silicon oxide is pressure-sensitive and special, the bismuth oxide is pressure-sensitive and special, and the zinc oxide is super pure.
3. The method for preparing the high-resistance layer slurry of the varistor according to claim 1, wherein the mass percentage of the raw material to the binder solution is 115.96%, the binder solution comprises ethyl cellulose and ethanol, the ethyl cellulose is analytically pure, and the ethanol is industrial grade.
4. The method for preparing the high-resistance layer paste of the varistor as claimed in claim 3, wherein the mass percent of the ethyl cellulose and the ethanol is 9.3%, and the density of the ethanol is 0.789 g/ml.
5. The preparation method of the high-resistance layer slurry of the varistor sheet according to claim 1, wherein the raw materials comprise the following components in percentage by mass: 8.6 percent of antimony oxide, 10.4 percent of silicon oxide, 9.7 percent of bismuth oxide and 71.3 percent of zinc oxide.
6. The method for preparing the high-resistance layer slurry of the varistor according to claim 1, wherein in the step (3), the ball milling time is controlled to be more than 180 min.
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| CN109553410A (en) * | 2018-11-28 | 2019-04-02 | 清华大学 | The preparation process of novel inorganic resistive formation for ZnO varistor |
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| JP3165410B2 (en) * | 1993-05-10 | 2001-05-14 | 三菱電機株式会社 | High resistance voltage non-linear resistor and lightning arrester using it |
| JPH09312203A (en) * | 1996-05-23 | 1997-12-02 | Matsushita Electric Ind Co Ltd | Zinc oxide ceramic compsn., manufacture thereof and zinc oxide varistor |
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| CN102126852B (en) * | 2011-03-22 | 2013-06-05 | 襄樊市三三电气有限公司 | Method for preparing zinc oxide piezoresistor ceramic |
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