CN108546111A - A kind of zinc oxide piezoresistor ceramic and preparation method thereof of high-voltage gradient, low residual voltage, low Leakage Current - Google Patents
A kind of zinc oxide piezoresistor ceramic and preparation method thereof of high-voltage gradient, low residual voltage, low Leakage Current Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 58
- 239000000919 ceramic Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims abstract description 24
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000002002 slurry Substances 0.000 claims abstract description 24
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 12
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 12
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 11
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 11
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 7
- 229910009253 Y(NO3)3 Inorganic materials 0.000 claims abstract description 4
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000004576 sand Substances 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 12
- 238000003801 milling Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 8
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000000748 compression moulding Methods 0.000 claims description 5
- 239000011236 particulate material Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 230000003679 aging effect Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 5
- 229960001296 zinc oxide Drugs 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002242 deionisation method Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 230000001131 transforming effect Effects 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
The present invention relates to a kind of high-voltage gradient, the zinc oxide piezoresistor ceramics and preparation method thereof of low residual voltage, low Leakage Current, belong to piezoresistive material preparing technical field, the preparation process of this method includes by Bi2O3、Sb2O3、MnO2、Cr2O3、Co2O3、SiO2Mixing is added deionized water and is sanded；ZnO and deionized water are added in the slurry being sanded, is sanded again；Al (NO are added in the ZnO slurries being sanded3)3、In(NO3)3、Y(NO3)3Or Y2O3, it is sanded again；The slurry tabletting being sanded is sintered.The resistor ceramic that this method is prepared has the characteristics that Leakage Current is small, gradient is high, residual voltage is low, discharge capacity is big, ageing properties are stablized, and can more be suitble to the application demand of electric transmission line lightning arrester and GIS arresters and depth limit Hyper-Voltage of Power Systems.
Description
Technical field
The invention belongs to Material Field, more particularly to a kind of high-voltage gradient, low residual voltage, the zinc oxide pressure of low Leakage Current
Quick resistor ceramic and preparation method thereof.
Background technology
Zinc-oxide piezoresistor is to add a small amount of Bi using ZnO as primary raw material2O3、Sb2O3、MnO2、Cr2O3、Co2O3Deng
As auxiliary ingredients, it is prepared using ceramic sintering process.Due to its excellent nonlinear wind vibration and energy absorption energy
Power, the key that the metal oxide arrester based on Zinc-oxide piezoresistor becomes overvoltage protection in modern power systems are set
It is standby, play the role of for electric system Lightning Impulse Overvoltage Protection, Electric Power Equipment Insulation cooperation vital.At the same time, it keeps away
The overvoltage protection level of thunder device directly determines the dielectric level of power transmission and transforming equipment.
The voltage that 1mA DC currents are generally acted on to lower varistor is known as pressure sensitive voltage U1mA, the pressure-sensitive electricity of unit height
Pressure is known as pressure-sensitive gradient.Pressure-sensitive gradient is higher, then the height of the lower based varistor of identical voltage effect is with regard to smaller.Therefore, high
The ZnO varistor of voltage gradient can reduce the height of gas insulated transformer substation (GIS) arrester, realize the miniaturization of GIS,
In addition it can also shorten the height of leakage conductor, it is easy to accomplish be installed in parallel with line insulator.And excellent ageing properties
It then may insure the safe and reliable operation of arrester.The residual voltage of ZnO varistor is defined as discharge current and flows through resistor disc two
Maximum voltage peak value between terminal.The residual voltage of ZnO varistor is low when low residual voltage indicates to pass through high current, nonlinear characteristic is good,
The protective value of arrester is good.There is better protection feature using the arrester that the ZnO varistor of low residual voltage assembles,
The overvoltage that can be will act in equipment is restricted to lower level, it is ensured that on the other hand the safety margin of equipment may insure
Arrester further decreases the dielectric level of electrical equipment, reduces the insulation system of power transmission and transforming equipment, is set to reduce power transmission and transformation
Standby weight, volume and manufacturing cost.The nonlinear characteristic of ZnO varistor can be divided into three regions：Low current area, middle electric current
Area and high current area.High current area (>103A/cm2) Ohm characteristic is presented, the resistance of region ZnO crystal grain determines residual voltage
Just, while the region is in the position that I-V characteristic plane occurs, and determines that ZnO varistor is released the size of charge capability.
In sintering process, sintering temperature is reduced, shortens soaking time, the pressure sensitive voltage U in low current area can be improved1mA.It is logical
The content of control Sb elements is crossed, or adds a certain amount of rear-earth-doped, the generation part Spinel in sintering process, utilization
The pinning effect of Spinel inhibits the speed of growth of ZnO crystal grain, can also achieve the purpose that improve pressure sensitive voltage and gradient.For
The I-V characteristic of high current area ZnO varistor, is mainly determined by grain resistance, to reduce the residual voltage of ZnO varistor,
It must just try every possible means to reduce the grain resistance in the region.The existing main method for reducing grain resistance, which is that addition is a certain proportion of, to be applied
Main ion, industrially to add based on Al ions.Although existing disclosed formula and technique have been able to prepare high-voltage gradient
Or the ZnO varistor valve block of low residual voltage, such as：A kind of pressure-sensitive porcelain of high-potential gradient ZnO base and preparation method thereof (patent
Number：201310262113.4), the low-temperature sintering method (patent No. of high potential gradient pressure-sensitive ceramic material a kind of：
201310021167.1), but different formulations, technique, which are combined together, can cause to be difficult to expected performance change, therefore not yet
Realization is provided simultaneously with the excellent ZnO varistor valve block of high-voltage gradient, low residual voltage, ageing properties.
Invention content
The present invention is in order to overcome the shortcoming of prior art, it is proposed that a kind of high-voltage gradient, low residual voltage, low leakage electricity
Zinc oxide piezoresistor ceramic of stream and preparation method thereof.The ZnO varistor ceramics that the present invention prepares have Leakage Current
Feature small, gradient is high, residual voltage is low, discharge capacity is big, ageing properties are stablized, more can be suitble to electric transmission line lightning arrester and GIS to keep away
The application demand of thunder device and depth limit Hyper-Voltage of Power Systems.
The method proposed by the present invention that ZnO varistor ceramics are prepared using aluminium, indium and ruthenium ion co-doped, feature
It is, this method specifically includes following steps：
1) raw material is prepared
ZnO (87.5~95.8mol%) in the following proportions, Bi2O3(0.5~2.0mol%), Sb2O3(0.5~
1.5mol%), MnO2(0.5~1.0mol%), Cr2O3(0.5~1.0mol%), Co2O3(0.5~1.5mol%), SiO2
(1.0~2.0mol%) and Al (NO3)3(0.1~1.0mol%), In (NO3)3(0.1~1.0mol%), Y (NO3)3Or
Y2O3(0.5~1.5mol%) prepares initial feed.
2) auxiliary addition slurry is prepared
The Bi that will be prepared in step 1)2O3、Sb2O3、MnO2、Cr2O3、Co2O3、SiO2Mixing is used as adjunct, is put into
In the sand milling tank of horizontal sand mill, deionized water is added, the weight ratio of deionized water and powder is 1:1.5, mixing is sanded, and is sanded
1~2 hour, until so that all mixed raw materials is uniformly dispersed；
3) auxiliary addition slurry and ZnO are mixed
By above-mentioned steps 2) in obtain auxiliary addition slurry in be added step 1) in prepare ZnO, add deionization
The weight ratio of water, deionized water and slurry is 1~2:1, mixing is sanded, and is sanded 0.5~1 hour, and all mixed raw materials is made to disperse
Until uniformly.
4) aluminium, indium and ruthenium ion are added
By above-mentioned steps 3) in obtained uniformly mixed ZnO slurries, the Al (NO that are prepared in addition step 1)3)3、In
(NO3)3、Y(NO3)3Or Y2O3, continue sand milling 0.5~1 hour, powder be made.
5) it is molded
By above-mentioned steps 4) in obtained powder be spray-dried, it is aqueous after, use hydraulic pressure tablet press machine and diameter
The cylindrical die of 50mm, by particulate material compression molding, briquetting pressure 150MPa, 3 minutes dwell times.
6) it is sintered
By above-mentioned steps 5) in the green body that is pressed under closed atmospheric condition, using 100~250 DEG C/liter hourly
Warm speed keeps the temperature dumping 5 hours at 400 DEG C or so, from room temperature to 1240~1260 DEG C of sintering temperature, at a sintering temperature
Heat preservation 3~4 hours, makes ceramic sintered compact.
The features of the present invention and advantageous effect are：Using traditional raw material mixed grinding technique and sintering process, pass through
The composition and ratio for adjusting adjunct are added to Al, In and Rare Earth Y element simultaneously in ZnO and mixed slurry.Al and In
Under the collective effect of ion, Al and In is dissolved into zinc lattice in sintering process, reduces grain resistance, reduces high current area
Residual voltage, the presence of In ions so that the quantity of interstitial zinc ions declines, and improves the age stability of ZnO varistor ceramics
Performance, compared with addition Al ions merely, leakage current is also effectively suppressed.The rare earth element y of addition is in liquid-phase sintering
In the process, the growth for effectively inhibiting ZnO crystal grain promotes knee voltage U1mAIt is significantly improved；On V-I characteristic curves, instead
Turn area to move to right, improves the ability of the ZnO varistor leakage current of this formula preparation.In conclusion can be by the pressure-sensitive electricity of ZnO
The residual voltage ratio of resistance ceramics is controlled 1.5 hereinafter, voltage gradient makes leakage current be less than 1 μ A/cm higher than 400V/mm2, non-linear
Coefficient is 75 or more, prepared ZnO varistor ceramics, have gradient is high, residual voltage is low, discharge capacity is big, Leakage Current is small,
The feature that ageing properties are stablized.
Specific embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail.
Embodiment one：
1) raw material is prepared
The low residual voltage ZnO varistor ceramic material ZnO (90.5mol%), Bi in the following proportions2O3(1.5mol%),
Sb2O3(1mol%), MnO2(1mol%), Cr2O3(1mol%), Co2O3(1mol%), SiO2(1.5mol%), Al (NO3)3
(1mol%), In (NO3)3(0.5mol%) and Y (NO3)3(1mol%) prepares initial feed.
2) auxiliary addition slurry is prepared
By Bi2O3(1.5mol%), Sb2O3(1mol%), MnO2(1mol%), Cr2O3(1mol%), Co2O3(1mol%)
And SiO2(1.5mol%) is put into the sand milling tank of horizontal sand mill, and the deionized water of 1.5 times of powder weight is added, and is sanded 2
Hour.
3) auxiliary addition slurry and ZnO are mixed
The ZnO of 90.5%mol is added in auxiliary addition slurry after sand milling, adds the deionized water of 1 times of powder weight,
All mixed raw materials are mixed, 1 hour is sanded, until being uniformly dispersed.
4) aluminium, indium and ruthenium ion are added
In uniformly mixed ZnO slurries, Al (NO are added3)3(1mol%), In (NO3)3(0.5mol%) and Y (NO3)3
(1mol%) continues to be sanded 1 hour.
5) it is molded
By the powder obtained in previous step carry out spray drying it is dry, it is aqueous after, use hydraulic pressure tablet press machine and diameter
The cylindrical die of 50mm, by particulate material compression molding, briquetting pressure 150MPa, 3 minutes dwell times.
6) it is sintered
With high-temperature electric resistance furnace, sintered body, actual temp and control time are as follows in closed atmosphere：
From room temperature to 400 DEG C, 2 hours heating-up times；
Dumping 5 hours are kept the temperature at 400 DEG C；
From 400 DEG C to 900 DEG C, 3 hours heating-up times；
From 900 DEG C to 1250 DEG C, 3 hours heating-up times；
3 hours are kept the temperature at 1250 DEG C；
Temperature fall.
Properties test has been carried out to the ZnO varistor sample being prepared by process above.Its leakage current obtains
To inhibition, 0.98 μ A/cm of mean value2, nonlinear factor mean value 79, breakdown voltage gradient mean value 440V/mm, residual voltage ratio mean value
1.52。
Embodiment two：
1) raw material is prepared
The low residual voltage ZnO varistor ceramic material ZnO (95.3mol%), Bi in the following proportions2O3(0.5mol%),
Sb2O3(0.5mol%), MnO2(0.5mol%), Cr2O3(0.5mol%), Co2O3(0.5mol%), SiO2(1mol%), Al
(NO3)3(0.6mol%), In (NO3)3(0.1mol%) and Y2O3(0.5mol%) prepares initial feed.
2) auxiliary addition slurry is prepared
By Bi2O3(0.5mol%), Sb2O3(0.5mol%), MnO2(0.5mol%), Cr2O3(0.5mol%), Co2O3
(0.5mol%), SiO2(1mol%) is put into the sand milling tank of horizontal sand mill, and the deionized water of 1 times of powder weight, sand is added
Grind 2 hours.
3) auxiliary addition slurry and ZnO are mixed
The ZnO of 95.3%mol, the deionization of 1.5 times of addition powder weight are added in auxiliary addition slurry after sand milling
All mixed raw materials are mixed and 1 hour are sanded, until being uniformly dispersed by water.
4) aluminium, indium and ruthenium ion are added
In uniformly mixed ZnO slurries, Al (NO are added3)3(0.6mol%), In (NO3)3(0.1mol%) and Y2O3
(0.5mol%) continues to be sanded 1 hour.
5) it is molded
The powder obtained in previous step is spray-dried, it is aqueous after, use hydraulic pressure tablet press machine and diameter 50mm
Cylindrical die, by particulate material compression molding, briquetting pressure 150MPa, 3 minutes dwell times.
6) it is sintered
With high-temperature electric resistance furnace, sintered body, actual temp and control time are as follows in closed atmosphere：
From room temperature to 400 DEG C, 2 hours heating-up times；
Dumping 5 hours are kept the temperature at 400 DEG C；
From 400 DEG C to 900 DEG C, 3 hours heating-up times；
From 900 DEG C to 1250 DEG C, 3 hours heating-up times；
4 hours are kept the temperature at 1240 DEG C；
Temperature fall.
Properties test has been carried out to the ZnO varistor sample being prepared by process above.Its leakage current obtains
To inhibition, 0.87 μ A/cm of mean value2, nonlinear factor mean value 83, breakdown voltage gradient mean value 465V/mm, residual voltage ratio mean value
1.49。
Embodiment three：
1) raw material is prepared
The low residual voltage ZnO varistor ceramic material ZnO (87.5mol%), Bi in the following proportions2O3(2mol%),
Sb2O3(1.5mol%), MnO2(1mol%), Cr2O3(1mol%), Co2O3(1.5mol%), SiO2(2mol%), Al (NO3)3
(1mol%), In (NO3)3(1mol%) and Y (NO3)3(1.5mol%) prepares initial feed.
2) it prepares and adjunct is sanded
By Bi2O3(2mol%), Sb2O3(1.5mol%), MnO2(1mol%), Cr2O3(1mol%), Co2O3
(1.5mol%) and SiO2(2mol%) is put into the sand milling tank of horizontal sand mill, and the deionized water of 1.5 times of powder weight is added,
2 hours are sanded.
3) auxiliary addition slurry and ZnO are mixed
The ZnO of 87.5%mol, the deionization of 0.5 times of addition powder weight are added in auxiliary addition slurry after sand milling
All mixed raw materials are mixed and 1 hour are sanded, until being uniformly dispersed by water.
4) aluminium, indium and ruthenium ion are added
In uniformly mixed ZnO slurries, Al (NO are added3)3(1mol%), In (NO3)3(1mol%) and Y (NO3)3
(1.5mol%) continues to be sanded 1 hour.
5) it is molded
The powder obtained in previous step is spray-dried, it is aqueous after, use hydraulic pressure tablet press machine and diameter 50mm
Cylindrical die, by particulate material compression molding, briquetting pressure 150MPa, 3 minutes dwell times.
6) it is sintered
With high-temperature electric resistance furnace, sintered body, actual temp and control time are as follows in closed atmosphere：
From room temperature to 400 DEG C, 2 hours heating-up times；
Dumping 5 hours are kept the temperature at 400 DEG C；
From 400 DEG C to 900 DEG C, 3 hours heating-up times；
From 900 DEG C to 1250 DEG C, 3 hours heating-up times；
3 hours are kept the temperature at 1260 DEG C；
Temperature fall.
Properties test has been carried out to the ZnO varistor sample being prepared by process above.Its leakage current obtains
To inhibition, 0.94 μ A/cm of mean value2, nonlinear factor mean value 77, breakdown voltage gradient mean value 510V/mm, residual voltage ratio mean value
1.53。
Claims (1)
1. the zinc oxide piezoresistor ceramic and preparation method thereof of a kind of high-voltage gradient, low residual voltage, low Leakage Current, special
Sign is that this method specifically includes following steps：
1）Raw material is prepared
ZnO (87.5 ~ 95.8mol%) in the following proportions, Bi2O3(0.5~2.0mol%)、Sb2O3(0.5~1.5mol%)、MnO2(0.5
~1.0mol%)、Cr2O3(0.5~1.0mol%)、Co2O3(0.5~1.5mol%)、SiO2(1.0 ~ 2.0mol%) and Al (NO3)3
(0.1~1.0mol%)、In(NO3)3(0.1~1.0mol%)、Y(NO3)3Or Y2O3(0.5 ~ 1.5mol%) prepares initial feed；
2）Prepare auxiliary addition slurry
By step 1）The Bi of middle preparation2O3、Sb2O3、MnO2、Cr2O3、Co2O3、SiO2Mixing is used as adjunct, is put into horizontal
In the sand milling tank of sand mill, deionized water is added, the weight ratio of deionized water and powder is 1:1.5, mixing is sanded, and is sanded 1~2
Hour, until so that all mixed raw materials is uniformly dispersed；
3）Auxiliary addition slurry and ZnO are mixed
By above-mentioned steps 2）In obtain auxiliary addition slurry in be added step 1）The ZnO of middle preparation, adds deionized water, goes
The weight ratio of ionized water and slurry is 1 ~ 2:1, mixing be sanded, be sanded 0.5~1 hour, so that all mixed raw materials is uniformly dispersed for
Only；
4）Add aluminium, indium and ruthenium ion
By above-mentioned steps 3）In in obtained uniformly mixed ZnO slurries, add step 1）Al (the NO of middle preparation3)3、In
(NO3)3、Y(NO3)3Or Y2O3, continue sand milling 0.5~1 hour, powder be made；
5）Molding
By above-mentioned steps 4）In obtained powder be spray-dried, it is aqueous after, use hydraulic pressure tablet press machine and diameter 50mm
Cylindrical die, by particulate material compression molding, briquetting pressure 150MPa, 3 minutes dwell times；
6）Sintering
By above-mentioned steps 5）In the green body that is pressed under closed atmospheric condition, using 100 ~ 250 DEG C/heating speed hourly
Degree keeps the temperature dumping 5 hours at 400 DEG C or so, from room temperature to 1240 ~ 1260 DEG C of sintering temperature, keeps the temperature 3 at a sintering temperature
~ 4 hours, make ceramic sintered compact.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109637763A (en) * | 2018-11-20 | 2019-04-16 | 清华大学 | The implementation of the low residual voltage ultra-high voltage lightning arrester of high-performance |
| CN110655400A (en) * | 2019-09-30 | 2020-01-07 | 厦门松元电子有限公司 | Zinc oxide varistor ceramic material with large through-flow capacity, preparation method thereof and preparation method of resistor thereof |
| CN112608141A (en) * | 2020-06-12 | 2021-04-06 | 佛山(华南)新材料研究院 | Zinc oxide piezoresistor for high-voltage arrester and preparation method thereof |
| CN114907111A (en) * | 2022-05-07 | 2022-08-16 | 吉林昱丰电气科技有限公司 | High-energy high-residual-voltage-ratio nonlinear device and preparation method thereof |
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2018
- 2018-06-07 CN CN201810579512.6A patent/CN108546111A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109637763A (en) * | 2018-11-20 | 2019-04-16 | 清华大学 | The implementation of the low residual voltage ultra-high voltage lightning arrester of high-performance |
| CN110655400A (en) * | 2019-09-30 | 2020-01-07 | 厦门松元电子有限公司 | Zinc oxide varistor ceramic material with large through-flow capacity, preparation method thereof and preparation method of resistor thereof |
| CN112608141A (en) * | 2020-06-12 | 2021-04-06 | 佛山(华南)新材料研究院 | Zinc oxide piezoresistor for high-voltage arrester and preparation method thereof |
| CN114907111A (en) * | 2022-05-07 | 2022-08-16 | 吉林昱丰电气科技有限公司 | High-energy high-residual-voltage-ratio nonlinear device and preparation method thereof |
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