CN108550548A - A kind of depth of parallelism adjustable chip suction head apparatus in upside-down mounting metal bonding - Google Patents
A kind of depth of parallelism adjustable chip suction head apparatus in upside-down mounting metal bonding Download PDFInfo
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- CN108550548A CN108550548A CN201810581348.2A CN201810581348A CN108550548A CN 108550548 A CN108550548 A CN 108550548A CN 201810581348 A CN201810581348 A CN 201810581348A CN 108550548 A CN108550548 A CN 108550548A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims description 22
- 239000003870 refractory metal Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241000252254 Catostomidae Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The present invention relates to chip manufacturing, encapsulation technology field more particularly to a kind of depth of parallelism adjustable chip suction head apparatus in upside-down mounting metal bonding, the difference is that：It includes center suction nozzle, adjustment housing, multiple depth of parallelism adjustment parts；Center suction nozzle is the hollow cylinder of intermediate throughholes comprising straight section and the tip positioned at straight section one end；Through-hole extends to tip end end and forms sucker；It is the hollow cylinder for being sheathed on center suction nozzle periphery to adjust housing, and adjustment housing, which is divided into the adjusting section of close center tips and is connected to, adjusts section and far from the fixed section of center tips；It adjusts and is equipped with gap between section inner wall and center suction nozzle outer wall；Multiple depth of parallelism adjustment part levels, which are arranged in, to be adjusted section side wall and is uniformly distributed, and depth of parallelism adjustment part can be inside and outside mobile, and inner opposite end is contacted with center suction nozzle outer wall.The depth of parallelism fine tuning of center suction nozzle can be achieved in the present invention, achievees the purpose that strong metal bonding and fine registration.
Description
Technical field
The present invention relates to chip manufacturing, encapsulation technology fields more particularly to a kind of for parallel in upside-down mounting metal bonding
Spend adjustable chip suction head apparatus.
Background technology
Silicon-based semiconductor is the foundation stone of modern microelectronic industry, but its development has been approached the limit, especially in terms of interconnection；And
Photoelectron technology is then in the high speed development stage, and present light emitting semiconductor device utilizes compound-material to prepare more, with silicon
Microelectronic technique is incompatible；Therefore, photon technology and microelectric technique are gathered, develops the sub- Science and Technology of silicon based opto-electronics
It is significant；
With the development of the communication technology and microelectronic process engineering, people are for the arithmetic speed of computer and the size of device
It is required that higher and higher；However, the interconnection delay effect of the integrated circuit based on electrical interconnection limits tradition with energy consumption problem
The further development of microelectric technique, compared with traditional electrical interconnection technology, the light network technology using light wave as information carrier,
Have many advantages, such as noiseless signal, fast response time, low-power consumption, big bandwidth；Accordingly it is desirable to by means of ripe CMOS works
Skill（Refer to the complementary integrated circuit manufacturing process that complementary metal oxide collectively forms）, using photon as information carrier, in silicon
The hybrid integrated of opto-electronic device is realized on based platform；
Recently as the deep development of silicon based photon, people are successfully realized such as photoswitch, light on SOI platforms
The passive devices such as waveguide integrate, however, the research of laser is but made slow progress on core devices Si, it is indirect to be primarily due to Si
Gap semiconductor, luminous efficiency is relatively low, and silicon substrate mixing laser is the core devices in photon chip, in on-chip optical interconnection, light
There is extremely important effect in exchange, flip-chip metal bonding techniques are practical and ripe methods at present, bonding
Technology is heterogeneous integrated by III-V material and Si, realizes that iii-v light source is exported from Si waveguides；
III-V（Such as GaAs, InP etc.）The hybrid integrated of race's material and silicon is a kind of to be presently considered to most have being suitable for for application prospect
The photon or opto chip technology of High Density Integration, are usually taken the SOI materials with waveguiding structure（Si/SiO2/ Si is served as a contrast
Bottom）It is bonded by organic material or bonding method with III-V epitaxial materials, removes III-V substrates, then carry out photon or light again
The processing of electronic device, light path, light wave are the SOI waveguides that lower layer is coupled by evanscent field, and electrical pumping uses coplanar electricity
It is completed in III-V material layer pole；Bonding techniques are extremely important among these, have for light source on the face that is formed by bonding chip several
A problem：First, most of CMOS factories do not allow to process III-V material, be afraid of to introduce pollution；Second is that material binds are got on
Laser is made again, and yield rate is relatively low；Third, iii-v wafer diameter is smaller and silica-base material diameter is bigger, into
Row bonding chip does technique again, and waste is serious；
To solve the problems, such as this, more feasible method is that iii-v laser tube core or array are first passed through conventional semiconductor work
Skill is worked it out, and is screened, then integrated up by various coupling process, but it is extremely difficult to obtain high coupling efficiency, difficulty
It is embodied in the active coupling with passive wave guide device；Common coupled waveguide is wedge shape and anti-wedge-shaped waveguide structure, it is desirable that is swashed
Light device unit is laterally aligned to precision in sub-micron or even deep-submicron precision with waveguide core, and common method is flip chip bonding,
Chip is sucked by suction nozzle in welding equipment equipment, then finds target location by complicated imaging and alignment, bonding is realized, in bonding
Uniform force application, collimation is most important, but also to ensure sufficient intensity and certain production efficiency；Usually require that suction nozzle
End face and target plate plane are absolute parallel, otherwise will appear and are bonded insecure, the low problem of coupling efficiency, are inhaled in small area size
It is especially prominent on head；
In consideration of it, to overcome drawbacks described above, a kind of depth of parallelism adjustable chip suction head apparatus in upside-down mounting metal bonding is provided
As this field urgent problem to be solved.
Invention content
It is an object of the invention to overcome the prior art, a kind of depth of parallelism in upside-down mounting metal bonding is provided
Adjustable chip suction head apparatus, it can be achieved that center suction nozzle the depth of parallelism fine tuning, achieve the purpose that strong metal bonding and fine registration.
In order to solve the above technical problems, the technical scheme is that：A kind of depth of parallelism in upside-down mounting metal bonding
Adjustable chip suction head apparatus, the difference is that：It includes center suction nozzle, and the center suction nozzle is the hollow posts of intermediate throughholes
Body comprising straight section and the tip positioned at straight section one end；Through-hole extends to tip end end and forms sucker；Adjust housing, the tune
Whole housing is the hollow cylinder for being sheathed on center suction nozzle periphery, and the adjustment housing is divided into the adjusting section close to center tips
Section is adjusted with being connected to and far from the fixed section of center tips；It is equipped between the adjusting section inner wall and center suction nozzle outer wall
Gap；Multiple depth of parallelism adjustment parts, multiple depth of parallelism adjustment part levels, which are arranged in, to be adjusted section side wall and is uniformly distributed, described
Depth of parallelism adjustment part can be inside and outside mobile, and inner opposite end is contacted with center suction nozzle outer wall.
By above scheme, the center tips are tetragonous tapered end, and end end is rectangular end face；Sucker is located at described
Among rectangular end face.
By above scheme, the rectangular end face covers the smooth Heat Conduction Material of minute surface grade.
By above scheme, the center suction nozzle straight section and adjustment housing are hollow cylinder；The adjustment housing is consolidated
It is equal with section outer diameter is adjusted to determine section outer diameter, fixed section internal diameter is suitable with center suction nozzle straight section outer diameter, adjusts section internal diameter and is more than center
Suction nozzle straight section outer diameter.
By above scheme, the center suction nozzle straight section length is 30-60mm, tip length 3-6mm；Straight section outer diameter is
2.5-5.0mm, it is 0.5-2mm, hole sucting diameter 0.2-0.6mm to hold the rectangular end face length of side at end；The fixation of the adjustment housing
Segment length is 10-20mm, and adjusting segment length is 15-30mm；Fixed section outer diameter and adjusting section outer diameter are 8-15mm, adjust section internal diameter
For 6-9mm.
By above scheme, the depth of parallelism adjustment part is screwed adjustment bolt.
By above scheme, the section side wall that adjusts is transversely provided with multiple threaded holes passed through for adjustment bolt.
By above scheme, the quantity of the threaded hole is 4, is spaced apart in 90 degree.
By above scheme, the flight pitch in the adjustment bolt is less than or equal to 0.5mm.
By above scheme, the material of center suction nozzle and adjustment housing is refractory metal material.
By said program, the present invention is suitable for the mixing integreted phontonics that high alignment precision requires, and is suitble to small size tube core
High depth of parallelism positioning；It realizes the depth of parallelism fine tuning of center suction nozzle by adjusting the use of housing and adjustment bolt, reaches secured
The purpose of metal bonding and fine registration；The configuration of the present invention is simple, flexible adjustment, uniform force application is highly practical, increases substantially
The production efficiency of photon integrated chip.
Description of the drawings
Fig. 1 is overall structure diagram of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of center of embodiment of the present invention tips；
Wherein：The centers 1- suction nozzle（101- straight sections, the tips 102-, 103- suckers, 104- rectangular end faces）, 2- adjust housing（201-
Adjust section, 202- fixed sections）, 3- adjustment bolts.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with the accompanying drawings and specific implementation
Invention is further described in detail for example.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
Hereinafter, refer to the attached drawing is more fully understood to many aspects of the present invention.Component in attached drawing may not be according to
Ratio is drawn.Alternatively, it is preferred that emphasis is clearly demonstrate the component of the present invention.In addition, in several views in the accompanying drawings, it is identical
Reference numeral indicate corresponding part.
Word " exemplary " as used herein or " illustrative " expression are used as example, example or explanation.It retouches herein
Stating any embodiment for " exemplary " or " illustrative " to be not necessarily to be construed as is preferred relative to other embodiment or has
Profit.All embodiments described below are illustrative embodiments, and it is to make to provide these illustrative embodiments
Those skilled in the art are obtained to make and use embodiment of the disclosure and be expected to be not intended to limit the scope of the present disclosure, the disclosure
Range is defined by the claims.In other embodiments, well known feature and method is described in detail so as not to obscure this
Invention.For purpose described herein, term "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal" and its spread out
New word is related by the invention oriented with such as Fig. 1.Moreover, having no intent to by technical field, background technology, invention content above
Or any theoretical limitation expressed or implied provided in detailed description below.It should also be clear that being shown in the accompanying drawings and below
Specification described in specific device and process be the inventive concept limited in the following claims simple examples it is real
Apply example.Therefore, it is understood not to the relevant specific size of presently disclosed embodiment and other physical features restricted
, unless claims are separately clearly stated.
It please refers to Fig.1 and Fig. 2, the present invention is a kind of depth of parallelism adjustable chip suction nozzle dress in upside-down mounting metal bonding
It sets comprising：One center suction nozzle, 1, adjustment housing 2 and multiple depth of parallelism adjustment parts；The center suction nozzle 1 is intermediate logical
The hollow cylinder in hole comprising straight section 101 and the tip 102 positioned at 101 one end of straight section；Through-hole extends to 102 end end shape of tip
At sucker 103；The adjustment housing 2 is the hollow cylinder for being sheathed on 1 periphery of center suction nozzle, and it is close that the adjustment housing 2, which divides,
The adjusting section 201 at 1 tip 102 of center suction nozzle and the fixed section for being connected to adjusting section 201 and 1 tip 102 of separate center suction nozzle
202；Gap is equipped between 201 inner wall of adjusting section and 1 outer wall of center suction nozzle；Multiple depth of parallelism adjustment part levels are worn
In adjusting 201 side wall of section and being uniformly distributed, the depth of parallelism adjustment part can be inside and outside mobile, outside inner opposite end and center suction nozzle 1
Wall contacts.
Through-hole among center suction nozzle 1 is circle；Suction nozzle 1 straight section 101 in center is hollow cylinder, 1 tip of center suction nozzle
102 are ground into as tetragonous tapered end, and Fig. 2 shows the structures at 1 tip 102 of center suction nozzle, and end end is rectangular, are rectangular end face
104 structures, sucker 103 are located among the rectangular end face 104；Rectangular end face 104 covers the smooth Heat Conduction Material of minute surface grade.
The generally hollow cylinder of housing 2 is adjusted, 202 outer diameter of fixed section of housing 2 is adjusted and adjusts 201 outer diameter phase of section
Deng；202 internal diameters of fixed section, that is, fixed section, 202 partial through holes diameter is thinner, it is suitable with center suction nozzle 1 straight section, 101 outer diameters, it can be achieved that
Close grafting fitting, plays fixed function；It is thicker to adjust the i.e. adjusting 201 partial through holes diameter of section of 201 internal diameter of section, is more than center and inhales
First 1 straight section, 101 outer diameter, which has certain gap with 1 straight section of center suction nozzle, 101 outer wall, for adjusting.
Depth of parallelism adjustment part in the embodiment of the present invention is the adjustment bolt 3 with fine thread；Adjust the adjusting of housing 2
201 side walls of section are transversely provided with the matched threaded hole passed through for adjustment bolt 3 of multiple and adjustment bolt 3, and threaded hole is circle
Inside there is fine thread in hole；The quantity of threaded hole and the adjustment bolt 3 mating with threaded hole is 4, is spaced apart in 90 degree.
Preferably, the material of center suction nozzle 1 is the stronger stainless steel of rigidity or other refractory metal materials；Center suction nozzle 1
101 length of straight section is 30-60mm, and 102 length of tip is 3-6mm；101 outer diameter of straight section is 2.5-5.0mm, holds the rectangular end face at end
104 length of sides are 0.5-2mm, 103 a diameter of 0.2-0.6mm of sucker；One of embodiment is：The material of center suction nozzle 1 be rigidity compared with
Strong stainless steel；1 straight section of center suction nozzle, 101 length is 30mm, and 102 length of tip is 3mm；101 outer diameter of straight section is 2.5mm, end end
104 length of side of rectangular end face be 0.5mm, 103 a diameter of 0.2mm of sucker.
Preferably, the material of adjustment housing 2 is stainless steel；202 length of fixed section for adjusting housing 2 is 10-20mm, is adjusted
201 length of section are 15-30mm；202 outer diameter of fixed section and adjusting section 201 outer diameters, that is, entire outer diameter are 8-15mm, are adjusted in section 201
Diameter is 6-9mm；One of embodiment is：Adjustment 2 material of housing is stainless steel；202 length of fixed section for adjusting housing 2 is 10mm,
Adjusting 201 length of section is 15mm；202 outer diameter of fixed section and adjusting section 201 outer diameters, that is, entire outer diameter are 8mm, adjust 201 internal diameter of section
For 6mm.
Preferably, the flight pitch in adjustment bolt 3 is 0.5mm or smaller；One of embodiment is：In adjustment bolt 3
Flight pitch is 0.5mm.
Upside-down mounting metal bonding is exactly to utilize special upside-down mounting soldering equipment, and a mobile terminal objective chip, which is adsorbed on the equipment, inhales
On head（Suction nozzle is less than 1mm according to user demand customization of different sizes, for small end face suction nozzle, such as area2, without Automatic Levelling
Function）, while an also fixing end target patch, wherein there is cohesive solder on one end；It is realized by D translation and rotation at both ends
Then plus thermally or ultrasonically bonding is realized in alignment；It is as follows that bonding based on the embodiment of the present invention specifically adjusts process：
1）It gets out mobile terminal chip first, then prepares the high depth of parallelism silicon chip of surface plating indium again as fixed transverse plane；
2）Suction head apparatus of the embodiment of the present invention is fixed to by standard interface on upside-down mounting welding machine；
3）Operate machine, adjustment fixed pan position；
4）Send instructions, makes to fall on the fixed pan that indium is plated on surface with chip suction nozzle；
5）Under fixation pressure, mobile terminal chip can leave a trace on indium surface；
6）If the trace edge depth is inconsistent, represent not parallel between target patch；
7）Four adjustment bolts 3 on suction head apparatus are adjusted at this time changes mobile terminal deflection direction；
8）Machine is operated again, indium face trace after compression is seen, until the surrounding trace depth is consistent；
9）Fixing end indium sheet is changed, target patch is changed, you can realizes the coupling of high row degree flip chip bonding.
In the embodiment of the present invention, by adjusting its distinctive four accurate adjustment bolts 3, realize that center suction nozzle 1 is micro- partially, from
And realize that suction nozzle end face changes with the objective plane depth of parallelism, it solves the problems, such as depth of parallelism adjustment, reaches strong metal bonding and essence
The purpose of close alignment.
Advantages of the present invention is：
1）The present invention is active for mixing silicon based photon, photoelectron in photon opto-electronic device, chip manufacturing, encapsulation technology field
The making of passive device or chip is suitable for photon optoelectronic intagration application；The mixed light subset required suitable for high alignment precision
At the high depth of parallelism positioning of suitable small size tube core；
2）The center suction nozzle 1 and adjustment housing 2 of the present invention is refractory metal material, can bear hot environment, it is contemplated that 800 take the photograph
Family name degree or more, and high pressure can be born, other high temperature and pressure bonding needs can be competent at completely；
3）The configuration of the present invention is simple reduces a large amount of mechanical devices, easy to process, cheap, it can be achieved that large scale and high accuracy
The depth of parallelism adjustment；
4）During present invention adjustment, suction nozzle end face is not destroyed, can at any time be adjusted according to objective chip itself depth of parallelism, facilitate reality
With, and can realize non-homogeneous pressure, and it is highly practical, the production efficiency of photon integrated chip is greatly improved.
The above content is combining, specific embodiment is made for the present invention to be further described, and it cannot be said that this hair
Bright specific implementation is confined to these explanations.For those of ordinary skill in the art to which the present invention belongs, it is not taking off
Under the premise of from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to the protection of the present invention
Range.
Claims (10)
1. a kind of depth of parallelism adjustable chip suction head apparatus in upside-down mounting metal bonding, which is characterized in that it includes：
Center suction nozzle, the center suction nozzle are the hollow cylinder of intermediate throughholes comprising straight section and the tip positioned at straight section one end；
Through-hole extends to tip end end and forms sucker；
Housing is adjusted, the adjustment housing is the hollow cylinder for being sheathed on center suction nozzle periphery, and the adjustment housing is divided into close
The adjusting section of center tips and the fixed section for being connected to adjusting section and separate center tips；The adjusting section inner wall with
Gap is equipped between the suction nozzle outer wall of center；
Multiple depth of parallelism adjustment parts, multiple depth of parallelism adjustment part levels, which are arranged in, to be adjusted section side wall and is uniformly distributed, described
Depth of parallelism adjustment part can be inside and outside mobile, and inner opposite end is contacted with center suction nozzle outer wall.
2. the depth of parallelism adjustable chip suction head apparatus according to claim 1 in upside-down mounting metal bonding, feature exists
In：The center tips are tetragonous tapered end, and end end is rectangular end face；Sucker is located among the rectangular end face.
3. the depth of parallelism adjustable chip suction head apparatus according to claim 2 in upside-down mounting metal bonding, feature exists
In：The rectangular end face covers the smooth Heat Conduction Material of minute surface grade.
4. the depth of parallelism adjustable chip suction head apparatus according to claim 2 in upside-down mounting metal bonding, feature exists
In：The center suction nozzle straight section and adjustment housing are hollow cylinder；The fixed section outer diameter and adjusting section of the adjustment housing
Outer diameter is equal, and fixed section internal diameter is suitable with center suction nozzle straight section outer diameter, adjusts section internal diameter and is more than center suction nozzle straight section outer diameter.
5. the depth of parallelism adjustable chip suction head apparatus according to claim 4 in upside-down mounting metal bonding, feature exists
In：The center suction nozzle straight section length is 30-60mm, tip length 3-6mm；Straight section outer diameter is 2.5-5.0mm, holds the square at end
Shape end surface side a length of 0.5-2mm, hole sucting diameter 0.2-0.6mm；The fixed section length of the adjustment housing is 10-20mm, is adjusted
Segmental length is 15-30mm；Fixed section outer diameter and adjusting section outer diameter are 8-15mm, and adjusting section internal diameter is 6-9mm.
6. the depth of parallelism adjustable chip suction head apparatus according to claim 1 in upside-down mounting metal bonding, feature exists
In：The depth of parallelism adjustment part is screwed adjustment bolt.
7. the depth of parallelism adjustable chip suction head apparatus according to claim 6 in upside-down mounting metal bonding, feature exists
In：The section side wall that adjusts is transversely provided with multiple threaded holes passed through for adjustment bolt.
8. the depth of parallelism adjustable chip suction head apparatus according to claim 7 in upside-down mounting metal bonding, feature exists
In：The quantity of the threaded hole is 4, is spaced apart in 90 degree.
9. the depth of parallelism adjustable chip suction head apparatus according to claim 7 in upside-down mounting metal bonding, feature exists
In：Flight pitch in the adjustment bolt is less than or equal to 0.5mm.
10. the depth of parallelism adjustable chip suction head apparatus according to claim 1 in upside-down mounting metal bonding, feature exists
In：The material of center suction nozzle and adjustment housing is refractory metal material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810581348.2A CN108550548A (en) | 2018-06-07 | 2018-06-07 | A kind of depth of parallelism adjustable chip suction head apparatus in upside-down mounting metal bonding |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810581348.2A CN108550548A (en) | 2018-06-07 | 2018-06-07 | A kind of depth of parallelism adjustable chip suction head apparatus in upside-down mounting metal bonding |
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| CN108550548A true CN108550548A (en) | 2018-09-18 |
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| CN201810581348.2A Pending CN108550548A (en) | 2018-06-07 | 2018-06-07 | A kind of depth of parallelism adjustable chip suction head apparatus in upside-down mounting metal bonding |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111323878A (en) * | 2020-04-01 | 2020-06-23 | 联合微电子中心有限责任公司 | Coupling alignment device and method for laser chip and silicon-based optoelectronic chip |
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Application publication date: 20180918 |