CN108550538B - Semiconductor chip production process - Google Patents
Semiconductor chip production process Download PDFInfo
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- CN108550538B CN108550538B CN201810490292.XA CN201810490292A CN108550538B CN 108550538 B CN108550538 B CN 108550538B CN 201810490292 A CN201810490292 A CN 201810490292A CN 108550538 B CN108550538 B CN 108550538B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
The invention belongs to the technical field of semiconductor chip manufacturing, and particularly relates to a semiconductor chip production process, which comprises the following steps: putting the wafer on a grinding machine and grinding the wafer into a mirror surface; putting the wafer into a high-temperature diffusion furnace for oxidation treatment; coating photoresist on the surface of the wafer, and then putting the wafer into a photoetching machine for exposure and development; sending the wafer into an etching machine for plasma etching; feeding the wafer into a high-temperature furnace for doping; conveying the wafer to the next process; the vibration device is arranged below the top plate of the box body, so that solid products on the reaction surface of the wafer fall off through vibration; the rotation device is arranged below the vibration device, so that the wafer is rotated, the reaction surface of the wafer is uniformly bombarded by ions, and the processing quality of the wafer is improved; a suction plate is arranged on the polish rod; reaction products generated on the reaction surface of the wafer are removed, and the reaction efficiency is further improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip manufacturing, and particularly relates to a semiconductor chip production process.
Background
The wafer refers to a silicon chip used for manufacturing a silicon semiconductor integrated circuit, the wafer is a carrier used for producing the integrated circuit, and the wafer generally refers to a monocrystalline silicon wafer. Wafers are the most commonly used semiconductor materials, and are classified into 4-inch, 5-inch, 6-inch, 8-inch, and so on, according to their diameters, and recently 12-inch and even larger sizes are developed. The larger the wafer is, the more ICs can be produced on the same wafer, so that the cost can be reduced; but the requirements on material technology and production technology are higher, such as problems of uniformity and the like. Generally, the larger the diameter of the silicon wafer is, the better the technology is in the wafer factory, and the yield is an important condition in the process of producing the wafer; the etching technique is a technique of selectively etching or peeling a surface of a semiconductor substrate or a surface-covering film according to a mask pattern or design requirements. Etching techniques are not only basic manufacturing processes for semiconductor devices and integrated circuits, but also applied to the processing of thin film circuits, printed circuits, and other fine patterns. The etching is divided into wet etching and dry etching. Dry etching basically involves two etching mechanisms, ion bombardment and chemical reaction. The side erosion phenomenon of the processed edge is very slight by using argon gas for the effect of ion bombardment. The chemical reaction effect is to use fluorine or chlorine gas, and the excited plasma, i.e. the ion cluster with fluorine or chlorine, can rapidly react with the material on the surface of the chip.
Some technical solutions for etching a semiconductor chip also exist in the prior art, and for example, a chinese patent with application number 201410356255.1 discloses an etching apparatus and an etching method, including: a reaction chamber; the wafer fixing device is used for fixing the wafer at the top of the reaction cavity, and the surface to be etched of the wafer faces the bottom of the reaction cavity; the gas injection port is arranged at the bottom of the reaction cavity and used for introducing etching gas into the reaction cavity; the exciting coil is arranged around the reaction cavity and used for exciting the etching gas into plasma; and a bias providing device connected with the wafer fixing device and used for applying bias to the wafer in the wafer fixing device.
The etching method of the technical scheme realizes sustainable etching no matter the volatility of the etching reaction product, but the reaction product generated on the etching reaction surface of the wafer cannot be removed in time, so that the new reaction is hindered, and the reaction efficiency is further influenced; the injection of the reaction gas is too concentrated, and ionized ions bombard the local area of the wafer too concentrated, so that the etching layer on the reaction surface is not uniform, and the processing quality of the wafer is affected.
Disclosure of Invention
In order to make up the defects of the prior art, the invention provides a semiconductor chip production process, wherein a vibrating device is arranged below a top plate of a box body of an etching machine used in the process, so that a solid product on the reaction surface of a wafer falls off through vibration; the rotation device is arranged below the vibration device, so that the rotation of the wafer is realized, and the reaction surface of the wafer is uniformly bombarded by ions; a suction plate is arranged on the polish rod; the reaction product generated on the reaction surface of the wafer is removed.
The technical scheme adopted by the invention for solving the technical problems is as follows: the invention relates to a semiconductor chip production process, which comprises the following steps:
the method comprises the following steps: putting the wafer on a grinding machine and grinding the wafer into a mirror surface;
step two: putting the wafer in the first step into a high-temperature diffusion furnace for oxidation treatment;
step three: coating photoresist on the surface of the wafer in the second step, and then putting the wafer into a photoetching machine for exposure and development;
step four: sending the wafer in the third step into an etching machine for plasma etching;
step five: feeding the wafer obtained in the fourth step into a high-temperature furnace for doping;
step six: conveying the wafer in the fifth step to the next process;
the etching machine in the fourth step comprises a box body, a vibration device, a rotating device, a clamping device, a heater, a suction device, an exciting coil, an air supply device and a bias voltage supply device, wherein the bias voltage supply device is arranged above a top plate of the box body; the bias voltage providing device is used for applying bias voltage to the wafer; a vibration device is arranged below the top plate of the box body; the vibration device is used for vibrating the wafer; a rotating device is arranged below the vibrating device and used for providing rotating power for the wafer; a clamping device is arranged below the rotating device; the clamping device is used for clamping the wafer; a suction device is arranged below the clamping device; the suction device is used for removing reaction products on the reaction surface of the wafer; an exciting coil is arranged on the inner wall of the box body below the suction device and used for ionizing reaction gas; an air supply device is arranged below the exciting coil; the gas supply device is used for introducing reaction gas; the air supply device is rotatably arranged above the bottom plate of the box body;
the vibration device comprises an electromagnet, a spring, a connecting column and a guide column, wherein the electromagnet is embedded above a top plate of the box body; a spring is arranged below the electromagnet; a connecting column is arranged in the spring; one end of the connecting column is provided with a large end face, one end of the large end face of the connecting column is suspended, and the other end of the connecting column is fixedly connected with the rotating device; the electromagnet is electrified, the magnetic force generated by the electromagnet attracts the connecting column, the connecting column drives the rotating device below, and the rotating device drives the clamping device below to further drive the wafer to move upwards; the electromagnet is powered off, and the rotating device, the clamping device and the wafer move downwards under the action of spring force and self gravity; the wafer is vibrated up and down by continuously electrifying and powering off the electromagnet, so that solid products on the reaction surface of the wafer are vibrated and fall off; the rotating device comprises a case, a first motor, a driving gear, a driven gear and a first bearing, wherein the upper surface of the top plate of the case is fixedly connected with the connecting column, and the right side of the upper surface of the top plate of the case is fixedly connected with a first motor shell; the end head of the first motor shaft is fixedly connected with the driving gear; the driving gear is meshed with the driven gear; the lower end face of the driven gear is fixedly connected with the first bearing inner ring; the lower end face of the first bearing inner ring is fixedly connected with the clamping device; the outer surface of the chassis bottom plate is fixedly connected with the upper end surface of the first bearing outer ring; the clamping device comprises a clamping jaw top plate and a clamping jaw, and the upper part of the clamping jaw top plate is fixedly connected with the lower end face of the first bearing inner ring; a clamping jaw is arranged below the clamping jaw top plate; the clamping jaw is used for clamping a wafer; a heater is fixedly connected below the clamping jaw top plate; the heater is used for heating the wafer; the first motor is electrified, the first motor drives the driving gear to rotate, the driving gear drives the driven gear to rotate, the driven gear drives the first bearing inner ring to rotate, the first bearing inner ring drives the clamping device to rotate, the rotation of the wafer is realized, and then the bombardment of uniformly receiving ions on the reaction surface of the wafer is realized.
A suction device is arranged below the clamping device; the suction device comprises a transverse support plate, a longitudinal support plate, a suction plate and a polish rod, wherein the transverse support plate and the longitudinal support plate are spliced into a square frame; the square frame is fixedly connected to the inner wall of the cylinder of the box body; two polished rods are arranged between the longitudinal supporting plate brackets; a suction plate is slidably mounted on the polish rod; the suction plate is used for removing reaction products generated on the reaction surface of the wafer, and the suction plate moves through the synchronous belt wheel; the motor is electrified to drive the synchronous belt pulley to rotate, the synchronous belt pulley drives the suction plate to move through the synchronous belt, and reaction products on the reaction surface of the wafer are removed in the moving process of the suction plate; the air supply device comprises an air supply cross rod, the air supply cross rod is rotatably connected to a bottom plate of the box body through a bearing, and the air supply cross rod is driven to rotate by a motor; a group of first cylindrical holes are formed in the surface of the cross rod of the air supply cross rod; reaction gas is introduced into the gas supply cross rod, the gas supply cross rod is driven by the motor to rotate, the reaction gas is uniformly sprayed after being fed, the reaction gas is ionized by the exciting coil, and the ionized ions bombard the reaction surface of the wafer under the action of the bias voltage supply device.
A group of second cylindrical holes are formed in the center line of the upper surface of the suction plate along the length direction, and a through hole is formed in the center of the end faces of the two ends of the suction plate; the second cylindrical hole is communicated with the through hole; a group of bristles are arranged on two sides of the second cylindrical hole on the upper surface of the suction plate respectively; the suction plate moves to drive the bristles on the upper surface of the suction plate to brush off solid products generated on the reaction surface of the wafer, and the lifted solid products are then pumped out by the suction holes on the upper surface of the suction plate.
The inner side surface of the transverse supporting plate is provided with a group of air supply joints, and the air supply joints are used for connecting air holes in the suction plate with a vacuum pump; a group of third cylindrical holes are formed in the inner side surface of the transverse support plate; a first air inlet hole is formed in the cylindrical surface in the middle of the third cylindrical hole; the gas supply joint is slidably arranged in the third cylindrical hole; one end of the gas supply joint is a spherical surface; the other end of the air supply joint is a cylindrical surface; a second air outlet hole is formed in the cylindrical surface of the air supply joint; a spring is arranged on the end face of the other end of the air supply joint; when the air supply connector is compressed, the second air outlet hole is communicated with the first air inlet hole; the suction plate moves, and the butt joint air supply joint is continuously changed; the end face of the suction plate extrudes the spherical surface of the air supply joint, the spring at the other end of the air supply joint is compressed, when an air outlet on the spherical surface of the air supply joint is aligned with an air hole on the end face of the suction plate, the second air outlet hole is communicated with the first air inlet hole, and the connection between the suction plate and the vacuum pump is realized; the suction plate continues to move and the air supply joint is disconnected from the air holes on the end face of the suction plate.
A cleaning plate is fixedly connected above the longitudinal supporting plate; the bottom surface of the cleaning plate is fixedly connected with a compression bump; the compression lug is used for cleaning the inner wall of the air hole on the suction plate; the suction plate moves to the two ends of the polish rod, the upper surface of the suction plate extrudes the compression lug, the compression lug deforms and then slides tightly against the upper surface of the suction plate, the suction plate moves to the limit position, the compression lug just falls into the air hole in the upper surface of the suction plate, and the compression lug has a friction effect on the inner wall of the air hole; when the suction plate moves in the reverse direction, the compression lug deforms and slides out along the inner wall of the air hole.
The compression lug is a wavy columnar body, and a cavity is arranged inside the compression lug; a spring is arranged in the cavity of the compression bump; the compression lug is the wave column body, makes the compression lug have bigger compression capacity, is equipped with the spring in the compression lug cavity, makes certain vibration occasionally of release pressure after the compression, still can vibrate after making the compression lug get into the gas pocket of suction plate upper surface, realizes that the compression lug has had more friction to the gas pocket inner wall several times, has improved clean effect.
The invention has the following beneficial effects:
1. according to the semiconductor chip production process, the etching machine used in the process is provided with the vibration device below the top plate of the box body, so that solid products on the reaction surface of the wafer fall off through vibration; the rotation device is arranged below the vibration device, so that the rotation of the wafer is realized, and the reaction surface of the wafer is uniformly bombarded by ions; a suction plate is arranged on the polish rod; the reaction product generated on the reaction surface of the wafer is removed.
2. According to the semiconductor chip production process, the bristles and the air holes are arranged on the upper surface of the suction plate by the etching machine, so that solid products generated on the reaction surface of the wafer are brushed off, and the lifted solid products are then sucked off by the air suction holes on the upper surface of the suction plate.
3. According to the semiconductor chip production process, the compression convex blocks are arranged above one end of the polished rod, so that when the suction plate moves to the two ends of the polished rod, the compression convex blocks just fall into the air holes in the upper surface of the suction plate, the compression convex blocks have a friction effect on the inner walls of the air holes, and the inner walls of the air holes are cleaned.
4. According to the semiconductor chip production process, the compression convex block is arranged into the wavy cylindrical body by the etching machine, so that the compression convex block has larger compression amount, the spring is arranged in the cavity of the compression convex block, the compressed spring has certain vibration when releasing pressure, the compression convex block can rub the inner wall of the air hole for a plurality of times, and the cleaning effect is further improved.
Drawings
The invention will be further explained with reference to the drawings.
FIG. 1 is a process flow diagram of the present invention;
FIG. 2 is a front view of the etching machine of the present invention;
FIG. 3 is a schematic view of the structure of a suction plate of the etching machine of the present invention;
3 FIG. 34 3 is 3 a 3 cross 3- 3 sectional 3 view 3 taken 3 at 3 A 3- 3 A 3 of 3 FIG. 32 3; 3
FIG. 5 is an enlarged view at B in FIG. 4;
FIG. 6 is a schematic diagram of a cleaning plate structure of the etching machine of the present invention;
FIG. 7 is an enlarged view at C in FIG. 2;
in the figure: the device comprises a box body 1, a vibrating device 2, an electromagnet 21, a connecting column 22, a guide column 23, a rotating device 3, a case 31, a first motor 32, a driving gear 33, a driven gear 34, a first bearing 35, a first bearing inner ring 351, a first bearing outer ring 352, a clamping device 4, a clamping jaw top plate 41, a clamping jaw 42, a heater 5, a suction device 6, a transverse supporting plate 61, an air supply connector 611, a first air inlet hole 612, a second air outlet hole 613, a longitudinal supporting plate 62, a cleaning plate 621, a compression bump 622, a suction plate 63, a polished rod 64, an exciting coil 7, an air supply device 8, an air supply cross rod 81 and a bias supply device 9.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
As shown in fig. 1 to 7, a semiconductor chip manufacturing process according to the present invention includes the following steps:
the method comprises the following steps: putting the wafer on a grinding machine and grinding the wafer into a mirror surface;
step two: putting the wafer in the first step into a high-temperature diffusion furnace for oxidation treatment;
step three: coating photoresist on the surface of the wafer in the second step, and then putting the wafer into a photoetching machine for exposure and development;
step four: sending the wafer in the third step into an etching machine for plasma etching;
step five: feeding the wafer obtained in the fourth step into a high-temperature furnace for doping;
step six: conveying the wafer in the fifth step to the next process;
the etching machine in the fourth step comprises a box body 1, a vibrating device 2, a rotating device 3, a clamping device 4, a heater 5, a suction device 6, an exciting coil 7, an air supply device 8 and a bias voltage supply device 9, wherein the bias voltage supply device 9 is arranged above a top plate of the box body 1; the bias voltage supply device 9 is used for applying bias voltage to the wafer; a vibration device 2 is arranged below a top plate of the box body 1; the vibration device 2 is used for vibrating the wafer; a rotating device 3 is arranged below the vibrating device 2, and the rotating device 3 is used for providing rotating power for the wafer; a clamping device 4 is arranged below the rotating device 3; the clamping device 4 is used for clamping a wafer; a suction device 6 is arranged below the clamping device 4; the suction device 6 is used for removing reaction products on the reaction surface of the wafer; an exciting coil 7 is arranged on the inner wall of the box body below the suction device 6, and the exciting coil 7 is used for ionizing reaction gas; an air supply device 8 is arranged below the exciting coil 7; the gas supply device 8 is used for introducing reaction gas; the air supply device 8 is rotatably arranged above the bottom plate of the box body 1;
the vibrating device 2 comprises an electromagnet 21, a spring, a connecting column 22 and a guide column 23, wherein the electromagnet 21 is embedded above a top plate of the box body 1; a spring is arranged below the electromagnet 21; a connecting column 22 is arranged in the spring; one end of the connecting column 22 is provided with a large end face, one end of the large end face of the connecting column 22 is suspended, and the other end of the connecting column 22 is fixedly connected with the rotating device 3; the electromagnet 21 is electrified, the magnetic force generated by the electromagnet 21 attracts the connecting column 22, the connecting column 22 drives the rotating device 3 below, and the rotating device 3 drives the clamping device 4 below to further drive the wafer to move upwards; the electromagnet 21 is powered off, and the rotating device 3, the clamping device 4 and the wafer move downwards under the action of spring force and self gravity; the electromagnet 21 is continuously electrified and powered off to realize the vertical vibration of the wafer, so that the solid product on the reaction surface of the wafer falls off through vibration; the rotating device 3 comprises a case 31, a first motor 32, a driving gear 33, a driven gear 34 and a first bearing 35, the upper surface of the top plate of the case 31 is fixedly connected with the connecting column 22, and the right side of the upper surface of the top plate of the case 31 is fixedly connected with a shell of the first motor 32; the end of the first motor 32 shaft is fixedly connected with a driving gear 33; the driving gear 33 is meshed with the driven gear 34; the lower end face of the driven gear 34 is fixedly connected with a first bearing inner ring 351; the lower end face of the first bearing inner ring 351 is fixedly connected with the clamping device 4; the outer surface of the bottom plate of the case 31 is fixedly connected with the upper end surface of the first bearing outer ring 352; the clamping device 4 comprises a clamping jaw top plate 41 and a clamping jaw 42, and the upper part of the clamping jaw top plate 41 is fixedly connected with the lower end face of a first bearing inner ring 351; a clamping jaw 42 is arranged below the clamping jaw top plate 41; the clamping jaw 42 is used for clamping a wafer; a heater 5 is fixedly connected below the clamping jaw top plate 41; the heater 5 is used for heating the wafer; no. one motor 32 is electrified, No. one motor 32 drives the drive gear 33 to rotate, the drive gear 33 drives the driven gear 34 to rotate, the driven gear 34 drives the first bearing inner ring 351 to rotate, the first bearing inner ring 351 drives the clamping device 4 to rotate, the rotation of the wafer is realized, and then the uniform bombardment of receiving ions on the reaction surface of the wafer is realized.
As an embodiment of the invention, a suction device 6 is arranged below the clamping device 4; the suction device 6 comprises a transverse support plate 61, a longitudinal support plate 62, a suction plate 63 and a polish rod 64, wherein the transverse support plate 61 and the longitudinal support plate 62 are spliced into a square frame; the square frame is fixedly connected to the inner wall of the cylinder of the box body 1; two polish rods 64 are arranged between the brackets of the longitudinal supporting plate 62; a suction plate 63 is slidably mounted on the polish rod 64; the suction plate 63 is used for removing reaction products generated on the reaction surface of the wafer, and the suction plate 63 moves through a synchronous pulley; the motor is electrified to drive the synchronous belt pulley to rotate, the synchronous belt pulley drives the suction plate 63 to move through the synchronous belt, and reaction products on the reaction surface of the wafer are removed in the moving process of the suction plate 63; the air supply device 8 comprises an air supply cross rod 81, the air supply cross rod 81 is rotatably connected to the bottom plate of the box body 1 through a bearing, and the air supply cross rod 81 is driven to rotate by a motor; a group of first cylindrical holes are formed in the cross bar surface of the air supply cross bar 81; reaction gas is introduced into the gas supply cross rod 81, the gas supply cross rod 81 is driven by the motor to rotate, the reaction gas is uniformly sprayed after being supplied, the reaction gas is ionized by the exciting coil 7, and the ionized ions bombard the reaction surface of the wafer under the action of the bias voltage supply device 9.
As an embodiment of the present invention, a group of second cylindrical holes are arranged on the central line of the upper surface of the suction plate 63 along the length direction, and a through hole is arranged at the central position of the end faces of the two ends of the suction plate 63; the second cylindrical hole is communicated with the through hole; a group of bristles are arranged on two sides of the second cylindrical hole on the upper surface of the suction plate 63; the suction plate 63 moves to drive the bristles on the upper surface of the suction plate 63 to brush off the solid products generated on the reaction surface of the wafer, and the lifted solid products are then sucked out by the suction holes on the upper surface of the suction plate 63.
As an embodiment of the present invention, the inner side surface of the lateral support plate 61 is provided with a set of air supply joints 611, and the air supply joints 611 are used for connecting the air holes on the suction plate 63 with a vacuum pump; a group of third cylindrical holes are formed in the inner side surface of the transverse support plate 61; a first air inlet hole 612 is formed in the cylindrical surface in the middle of the third cylindrical hole; the air supply joint 611 is slidably mounted in the third cylindrical hole; one end of the air supply joint 611 is a spherical surface; the other end of the air supply joint 611 is a cylindrical surface; a second air outlet 613 is arranged on the cylindrical surface of the air supply joint 611; a spring is arranged on the end face of the other end of the air supply joint 611; when the air supply joint 611 is compressed, the second air outlet 613 is communicated with the first air inlet 612; the suction plate 63 moves, and the butted air supply joint 611 is continuously changed; the end face of the suction plate 63 extrudes the spherical surface of the air supply joint 611, the spring at the other end of the air supply joint 611 compresses, when the air outlet on the spherical surface of the air supply joint 611 is aligned with the air hole on the end face of the suction plate 63, the second air outlet hole 613 is communicated with the first air inlet hole 612, and the connection between the suction plate 63 and the vacuum pump is realized; the suction plate 63 continues to move and the air supply connection 611 is disconnected from the air holes on the end face of the suction plate 63.
As an embodiment of the present invention, a cleaning plate 621 is fixedly connected above the longitudinal supporting plate 62; the bottom surface of the cleaning plate 621 is fixedly connected with a compression bump 622; the compression bump 622 is used for cleaning the inner wall of the air hole on the suction plate 63; the suction plate 63 moves to the two ends of the polish rod 64, the upper surface of the suction plate 63 presses the compression lug 622, the compression lug 622 slides tightly against the upper surface of the suction plate 63 after being deformed, the suction plate 63 moves to the limit position, the compression lug 622 just falls into the air hole on the upper surface of the suction plate 63, and the compression lug 622 has a friction effect on the inner wall of the air hole; when the suction plate 63 is moved in the reverse direction, the compression protrusions 622 are deformed to slide out along the inner wall of the air hole.
As an embodiment of the present invention, the compression protrusion 622 is a wave-shaped column, and a cavity is disposed inside the compression protrusion 622; a spring is arranged in the cavity of the compression lug 622; compression lug 622 is the wave column body, makes compression lug 622 have a bigger compression capacity, is equipped with the spring in the compression lug 622 cavity, certain vibration during the release pressure after making the compression, still can vibrate after making compression lug 622 get into the gas pocket of suction plate 63 upper surface, realizes that compression lug 622 has had more friction to the gas pocket inner wall several times, has improved clean effect.
When the wafer polishing device works, the electromagnet 21 is electrified, the magnetic force generated by the electromagnet 21 attracts the connecting column 22, the connecting column 22 drives the rotating device 3 below, and the rotating device 3 drives the clamping device 4 below to further drive the wafer to move upwards; the electromagnet 21 is powered off, and the rotating device 3, the clamping device 4 and the wafer move downwards under the action of spring force and self gravity; the electromagnet 21 is continuously electrified and powered off to realize the vertical vibration of the wafer, so that the solid product on the reaction surface of the wafer falls off through vibration; the first motor 32 is electrified, the first motor 32 drives the driving gear 33 to rotate, the driving gear 33 drives the driven gear 34 to rotate, the driven gear 34 drives the first bearing inner ring 351 to rotate, and the first bearing inner ring 351 drives the clamping device 4 to rotate, so that the rotation of the wafer is realized, and the reaction surface of the wafer is uniformly bombarded by ions; reaction gas is introduced into the gas supply cross rod 81, the gas supply cross rod 81 is driven by the motor to rotate, the reaction gas is uniformly sprayed after being supplied, the reaction gas is ionized by the exciting coil 7, and the ionized ions bombard the reaction surface of the wafer under the action of the bias voltage supply device 9; the motor is electrified to drive the synchronous belt pulley to rotate, the synchronous belt pulley drives the suction plate 63 to move through the synchronous belt, and reaction products on the reaction surface of the wafer are removed in the moving process of the suction plate 63; the suction plate 63 moves to drive the bristles on the upper surface of the suction plate 63 to brush off the solid products generated on the reaction surface of the wafer, and the lifted solid products are then sucked off by the suction holes on the upper surface of the suction plate 63; the suction plate 63 moves to drive the gas supply joint 611 butted with the second cylindrical hole on the end surface of the suction plate 63 to change continuously; the end face of the suction plate 63 extrudes the spherical surface of the air supply joint 611, the spring at the other end of the air supply joint 611 compresses, when the air outlet on the spherical surface of the air supply joint 611 is aligned with the air hole on the end face of the suction plate 63, the second air outlet hole 613 is communicated with the first air inlet hole 612, and the connection between the suction plate 63 and the vacuum pump is realized; the suction plate 63 continues to move, and the air supply joint 611 is disconnected from the air holes on the end face of the suction plate 63; the suction plate 63 moves to the two ends of the polish rod 64, the upper surface of the suction plate 63 presses the compression lug 622, the compression lug 622 slides tightly against the upper surface of the suction plate 63 after being deformed, the suction plate 63 moves to the limit position, the compression lug 622 just falls into the air hole on the upper surface of the suction plate 63, and the compression lug 622 has a friction effect on the inner wall of the air hole; when the suction plate 63 moves in the reverse direction, the compression protrusions 622 deform and slide out along the inner wall of the air holes; compression lug 622 is the wave column body, makes compression lug 622 have a bigger compression capacity, is equipped with the spring in the compression lug 622 cavity, certain vibration during the release pressure after making the compression, still can vibrate after making compression lug 622 get into the gas pocket of suction plate 63 upper surface, realizes that compression lug 622 has had more friction to the gas pocket inner wall several times, has improved clean effect.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A semiconductor chip production process is characterized in that: the process comprises the following steps:
the method comprises the following steps: putting the wafer on a grinding machine and grinding the wafer into a mirror surface;
step two: putting the wafer in the first step into a high-temperature diffusion furnace for oxidation treatment;
step three: coating photoresist on the surface of the wafer in the second step, and then putting the wafer into a photoetching machine for exposure and development;
step four: sending the wafer in the third step into an etching machine for plasma etching;
step five: feeding the wafer obtained in the fourth step into a high-temperature furnace for doping;
step six: conveying the wafer in the fifth step to the next process;
the etching machine in the fourth step comprises a box body (1), a vibrating device (2), a rotating device (3), a clamping device (4), a heater (5), a suction device (6), an exciting coil (7), an air supply device (8) and a bias voltage supply device (9), wherein the bias voltage supply device (9) is arranged above a top plate of the box body (1); the bias voltage supply device (9) is used for applying bias voltage to the wafer; a vibration device (2) is arranged below a top plate of the box body (1); the vibration device (2) is used for vibrating the wafer; a rotating device (3) is arranged below the vibrating device (2), and the rotating device (3) is used for providing rotating power for the wafer; a clamping device (4) is arranged below the rotating device (3); the clamping device (4) is used for clamping a wafer; a suction device (6) is arranged below the clamping device (4); the suction device (6) is used for removing reaction products on the reaction surface of the wafer; an exciting coil (7) is arranged on the inner wall of the box body below the suction device (6), and the exciting coil (7) is used for ionizing reaction gas; an air supply device (8) is arranged below the exciting coil (7); the gas supply device (8) is used for introducing reaction gas; the air supply device (8) is rotatably arranged above the bottom plate of the box body (1);
the vibration device (2) comprises an electromagnet (21), a spring, a connecting column (22) and a guide column (23), wherein the electromagnet (21) is embedded above a top plate of the box body (1); a spring is arranged below the electromagnet (21); a connecting column (22) is arranged in the spring; one end of the connecting column (22) is provided with a large end face, one end of the large end face of the connecting column (22) is suspended, and the other end of the connecting column (22) is fixedly connected with the rotating device (3); the rotating device (3) comprises a case (31), a first motor (32), a driving gear (33), a driven gear (34) and a first bearing (35), the upper surface of the top plate of the case (31) is fixedly connected with the connecting column (22), and the right side of the upper surface of the top plate of the case (31) is fixedly connected with a shell of the first motor (32); the end of the first motor (32) shaft is fixedly connected with a driving gear (33); the driving gear (33) is meshed with the driven gear (34); the lower end face of the driven gear (34) is fixedly connected with a first bearing inner ring (351); the lower end face of the first bearing inner ring (351) is fixedly connected with the clamping device (4); the outer surface of the bottom plate of the case (31) is fixedly connected with the upper end surface of a first bearing outer ring (352); the clamping device (4) comprises a clamping jaw top plate (41) and a clamping jaw (42), and the upper part of the clamping jaw top plate (41) is fixedly connected with the lower end face of a first bearing inner ring (351); a clamping jaw (42) is arranged below the clamping jaw top plate (41); the clamping jaw (42) is used for clamping a wafer; a heater (5) is fixedly connected below the clamping jaw top plate (41); the heater (5) is used for heating the wafer.
2. A semiconductor chip production process according to claim 1, characterized in that: a suction device (6) is arranged below the clamping device (4); the suction device (6) comprises a transverse support plate (61), a longitudinal support plate (62), a suction plate (63) and a polish rod (64), wherein the transverse support plate (61) and the longitudinal support plate (62) are spliced into a square frame; the square frame is fixedly connected to the inner wall of the cylinder of the box body (1); two polish rods (64) are arranged between the brackets of the longitudinal supporting plate (62); a suction plate (63) is arranged on the polish rod (64) in a sliding way; the suction plate (63) is used for removing reaction products generated on the reaction surface of the wafer, and the suction plate (63) is moved through a synchronous pulley; the air supply device (8) comprises an air supply cross rod (81), the air supply cross rod (81) is rotatably connected to a bottom plate of the box body (1) through a bearing, and the air supply cross rod (81) is driven to rotate by a motor; a group of first cylindrical holes are formed in the cross rod surface of the air supply cross rod (81).
3. A semiconductor chip production process according to claim 2, characterized in that: a group of second cylindrical holes are formed in the center line of the upper surface of the suction plate (63) along the length direction, and a through hole is formed in the center position of the end faces of the two ends of the suction plate (63); the second cylindrical hole is communicated with the through hole; and two sides of the second cylindrical hole on the upper surface of the suction plate (63) are respectively provided with a group of bristles.
4. A semiconductor chip production process according to claim 2, characterized in that: the inner side surface of the transverse supporting plate (61) is provided with a group of air supply joints (611), and the air supply joints (611) are used for connecting air holes in the suction plate (63) with a vacuum pump; a group of third cylindrical holes are formed in the inner side surface of the transverse supporting plate (61); a first air inlet hole (612) is formed in the cylindrical surface in the middle of the third cylindrical hole; the gas supply joint (611) is slidably arranged in the third cylindrical hole; one end of the gas supply joint (611) is a spherical surface; the other end of the air supply joint (611) is a cylindrical surface; a second air outlet hole (613) is formed in the cylindrical surface of the air supply joint (611); a spring is arranged on the end face of the other end of the air supply joint (611); when the air supply joint (611) is compressed, the second air outlet hole (613) is communicated with the first air inlet hole (612).
5. A semiconductor chip production process according to claim 2, characterized in that: a cleaning plate (621) is fixedly connected above the longitudinal supporting plate (62); the bottom surface of the cleaning plate (621) is fixedly connected with a compression bump (622); the compression lug (622) is used for cleaning the inner wall of the air hole on the suction plate (63).
6. A semiconductor chip production process according to claim 5, wherein: the compression bump (622) is a wavy cylindrical body, and a cavity is arranged inside the compression bump (622); a spring is arranged in the cavity of the compression lug (622).
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| CN113038720B (en) * | 2019-12-25 | 2022-06-17 | 重庆方正高密电子有限公司 | Circuit board etching mounting bracket and plasma etching machine |
| CN111627833B (en) * | 2020-03-31 | 2022-06-10 | 山东职业学院 | Semiconductor chip production preparation system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102210015A (en) * | 2008-11-13 | 2011-10-05 | 东京毅力科创株式会社 | Plasma etching method and plasma etching device |
| CN105336563A (en) * | 2014-07-24 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching apparatus and etching method |
| CN105529283A (en) * | 2014-09-29 | 2016-04-27 | 盛美半导体设备（上海）有限公司 | Two-sided vapor etching device for wafer |
| US20170194157A1 (en) * | 2016-01-04 | 2017-07-06 | Hitachi High-Technologies Corporation | Method for releasing sample and plasma processing apparatus using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20080043994A (en) * | 2006-11-15 | 2008-05-20 | 홍정의 | Apparatus and method for treating substrate |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102210015A (en) * | 2008-11-13 | 2011-10-05 | 东京毅力科创株式会社 | Plasma etching method and plasma etching device |
| CN105336563A (en) * | 2014-07-24 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching apparatus and etching method |
| CN105529283A (en) * | 2014-09-29 | 2016-04-27 | 盛美半导体设备（上海）有限公司 | Two-sided vapor etching device for wafer |
| US20170194157A1 (en) * | 2016-01-04 | 2017-07-06 | Hitachi High-Technologies Corporation | Method for releasing sample and plasma processing apparatus using same |
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