CN108549156B - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
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- CN108549156B CN108549156B CN201810279738.4A CN201810279738A CN108549156B CN 108549156 B CN108549156 B CN 108549156B CN 201810279738 A CN201810279738 A CN 201810279738A CN 108549156 B CN108549156 B CN 108549156B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000003384 imaging method Methods 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 description 9
- 230000010354 integration Effects 0.000 description 6
- 238000000265 homogenisation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
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- Semiconductor Lasers (AREA)
Abstract
The invention provides a semiconductor laser, which comprises a light source, a waveguide sheet, a FAC (Fabry-Perot) mirror and an imaging lens which are sequentially arranged in the slow axis direction; the bar positive plate, the bar negative plate and the mirror surface chamber are also included; the bar positive plates and the bar negative plates are attached to each other in the fast axis direction; the mirror chamber is formed between the bar positive electrode plate and the bar negative electrode plate and is open in a slow axis direction; the light source, the waveguide sheet, and the FAC mirror are located within the mirror surface chamber, and the FAC mirror covers an opening of the mirror surface chamber that opens in a slow axis direction; the imaging lens is positioned outside the mirror cavity; the bar positive plates, the bar negative plates and the mirror surface cavities are arranged in a linear array in the fast axis direction, and the light source, the waveguide sheet and the FAC mirror are arranged in any one of the mirror surface cavities.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a semiconductor laser.
Background
The general semiconductor laser array is composed of a plurality of luminous points, and after simple optical imaging and shaping, the total light beam distribution still has strong or weak light and is not uniform enough. For this reason, patent application publication No. CN106941240A discloses a semiconductor laser that homogenizes a spot formed in the slow axis direction by providing a BAR, a FAC mirror, a focusing lens group, a waveguide sheet, and an imaging lens in the slow axis direction. And the size of the image point is enlarged by n times than that of the luminous point, so that the energy area is increased. In fact, it homogenizes the light spot mainly through the focusing lens group and the waveguide plate, and enlarges the size of the image point.
However, adding the focusing lens group and the waveguide plate in the slow axis direction obviously increases the optical path distance of the imaging. Therefore, the volume of the semiconductor laser is also increased.
Disclosure of Invention
In order to solve the technical problems, the invention provides a semiconductor laser, which changes the traditional light path and achieves the effects of light spot homogenization and image point size amplification under the condition of reducing the imaging light path distance.
In order to achieve the purpose, the invention provides the following technical scheme:
the semiconductor laser comprises a light source, a waveguide sheet, a FAC (Fabry-Perot) mirror and an imaging lens which are sequentially arranged in the slow axis direction;
the bar positive plate, the bar negative plate and the mirror surface chamber are also included;
the bar positive plates and the bar negative plates are attached to each other in the fast axis direction;
the mirror chamber is formed between the bar positive electrode plate and the bar negative electrode plate and is open in a slow axis direction;
the light source, the waveguide sheet, and the FAC mirror are located within the mirror surface chamber, and the FAC mirror covers an opening of the mirror surface chamber that opens in a slow axis direction; the imaging lens is positioned outside the mirror cavity;
the bar positive plates, the bar negative plates and the mirror surface cavities are arranged in a linear array in the fast axis direction, and the light source, the waveguide sheet and the FAC mirror are arranged in any one of the mirror surface cavities.
As an implementation manner, the imaging lens is a semi-convex lens, a plane of the semi-convex lens faces a position where the FAC mirror is located, and a convex surface of the semi-convex lens faces away from the position where the FAC mirror is located.
As an implementation manner, in the slow axis direction, a plurality of FAC mirrors are all opposite to the imaging lens.
As an embodiment, the bar positive electrode plate includes a positive electrode plate light outlet opening to the bar negative electrode plate in a fast axis direction and opening to the waveguide sheet and the FAC mirror in a slow axis direction;
the bar negative plate comprises a negative plate light outlet which is opened to the bar positive plate in the fast axis direction and opened to the waveguide sheet and the FAC mirror in the slow axis direction;
wherein the positive plate light outlet and the negative plate light outlet form the mirror cavity and are open in a slow axis direction when the bar positive plates and the bar negative plates are attached to each other.
As an embodiment, the glass insulation sheet is further included;
the glass insulation sheet comprises a daylight opening which is opened in the slow axis direction; the lighting port profile is the same as the opening profile;
wherein the positive plate light outlet, the light collection port, and the negative plate light outlet form the mirror cavity and are open in a slow axis direction when the bar positive plate and the bar negative plate are attached to each other through the glass insulation sheet.
As an embodiment, the bar positive plate comprises a positive plate chamfered edge;
the bar negative plate comprises a negative plate chamfered edge;
the positive plate chamfer limit with the negative plate chamfer limit is located same one side, the glass insulation piece is relative the positive plate chamfer limit with the negative plate chamfer limit protrusion.
As an implementation, the waveguide sheet is attached to the FAC mirror;
the FAC mirror comprises a plane and a cylindrical surface which are opposite in the slow axis direction;
the waveguide piece is attached to the plane of the FAC mirror.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a semiconductor laser which only comprises a bar integration and an imaging lens on the whole layout. And both are arranged in the slow axis direction. Thus, the optical path distance of the image is reduced much compared to conventional optical paths. And the single bar assembly comprises a light source, a waveguide sheet and an FAC mirror which are sequentially arranged in the slow axis direction. The single bar integration can homogenize the light spot and enlarge the size of the image point. Because the light source, the waveguide plate, and the FAC mirror are located in a specular chamber, the light source's emission point is homogenized and multiplied by virtue of the specular chamber. The light beam formed by the light emitting point is diffused by the waveguide sheet and then output from the FAC mirror. Therefore, a homogenized, enlarged spot size in the slow axis direction can be obtained.
Drawings
Fig. 1 is an optical path diagram of a semiconductor laser in a slow axis direction and a fast axis direction according to an embodiment of the present invention;
fig. 2 is a first perspective view of a semiconductor laser according to an embodiment of the present invention;
fig. 3 is a second perspective view of a semiconductor laser provided in an embodiment of the present invention;
fig. 4 is a third perspective view of a semiconductor laser according to an embodiment of the present invention;
fig. 5 is a flowchart of a laser beam combining method according to an embodiment of the present invention.
In the figure: 1. a light source; 2. a waveguide sheet; 3. a FAC mirror; 4. an imaging lens; 5. bar positive plate; 5a, a light outlet of the positive plate; 5b, chamfering the positive plate; 6. bar negative plate; 6a, a negative plate light outlet; 6b, chamfering edges of the negative plate; 7. a mirror cavity; 7a, an opening; 8. a glass insulating sheet; 8a and a daylight opening.
Detailed Description
The above and further features and advantages of the present invention will be apparent from the following, complete description of the invention, taken in conjunction with the accompanying drawings, wherein the described embodiments are merely some, but not all embodiments of the invention.
In one embodiment, as shown in fig. 1 and 2. The present embodiment provides a semiconductor laser including a light source 1, a waveguide sheet 2, a FAC mirror 3, and an imaging lens 4 arranged in this order in the slow axis direction. Fig. 1 shows a position between the plurality of bar integration and imaging lenses 4, and the plurality of bar integration and imaging lenses 4 are arranged in the slow axis direction. Fig. 2 shows the position between one bar integrated light source 1, waveguide plate 2, and FAC mirror 3, and the light source 1, waveguide plate 2, and FAC mirror 3 are arranged in order in the slow axis direction. The direction b in the figure shows the slow axis direction. Note that the b direction in the figure shows only a single direction. In fact, the slow axis direction is either the b direction or the direction opposite to the b direction. It should be noted that the direction b in this embodiment is also the slow axis direction in any of the other embodiments below. The present embodiment provides a semiconductor laser further comprising a bar positive plate 5, a bar negative plate 6, and a mirror cavity 7. The bar positive plates 5 and the bar negative plates 6 are attached to each other in the fast axis direction. The direction a in the figure shows the fast axis direction. Note that the a direction in the figure shows only a single direction. In fact, the fast axis direction is either the a direction or the opposite direction of the a direction. It should be noted that the a direction in this embodiment is also the fast axis direction in any of the other embodiments below. And, the mirror surface chamber 7 is formed between the bar positive electrode plates 5 and the bar negative electrode plates 6, and is opened in the slow axis direction. Referring to fig. 2, the light source 1, the waveguide sheet 2, and the FAC mirror 3 are located inside the mirror chamber 7, and the FAC mirror 3 covers an opening 7a of the mirror chamber 7 that opens in the slow axis direction. Referring again to fig. 1, the imaging lens 4 is located outside the mirror chamber 7. Referring to fig. 3, a plurality of bar positive plates 5, bar negative plates 6, and mirror cavities 7 are in a linear array in the fast axis direction. In each mirror surface chamber 7, the light source 1, the waveguide sheet 2, and the FAC mirror 3 are provided.
In the present embodiment, the semiconductor laser actually includes only the bar integration and imaging lens 4. And both are arranged in the slow axis direction. Thus, the optical path distance of the image is reduced much compared to conventional optical paths. And the single bar assembly comprises a light source 1, a waveguide piece 2 and a FAC mirror 3 which are sequentially arranged in the slow axis direction. The single bar integration can homogenize the light spot and enlarge the size of the image point. Because the light source 1, the waveguide 2, and the FAC mirror 3 are located in the mirror chamber 7, the light emitting point of the light source 1 is homogenized and multiplied by means of the mirror chamber 7. The light beam formed by the light emitting point is diffused by the waveguide sheet 2 and then output from the FAC mirror 3. Therefore, a homogenized, enlarged spot size in the slow axis direction can be obtained.
In one embodiment, as shown in FIG. 1. The embodiment provides a semiconductor laser, the imaging lens 4 is a semi-convex lens, the plane of the semi-convex lens faces the position of the FAC mirror 3, and the convex surface of the semi-convex lens faces away from the position of the FAC mirror 3. In the present embodiment, a plurality of FAC mirrors 3 side by side are focused by an imaging lens 4.
In one embodiment, as shown in FIG. 1. The present embodiment provides a semiconductor laser in which a plurality of FAC mirrors 3 are each opposed to an imaging lens 4 in the slow axis direction. In the present embodiment, a plurality of FAC mirrors 3 side by side are focused by one imaging lens 4.
In one embodiment, as shown in FIG. 4. The present embodiment provides a semiconductor laser whose bar positive plate 5 includes a positive plate light outlet 5a that is open to the bar negative plate 6 in the fast axis direction and is open to the waveguide piece 2 and the FAC mirror 3 in the slow axis direction. The bar negative plate 6 includes a negative plate light outlet 6a that is open to the bar positive plate 5 in the fast axis direction and is open to the waveguide piece 2 and the FAC mirror 3 in the slow axis direction. Wherein the positive plate light-emitting ports 5a and the negative plate light-emitting ports 6a form the mirror-surface chamber 7 and are open in the slow axis direction when the bar positive plates 5 and the bar negative plates 6 are attached to each other.
In the present embodiment, since the positive plate light outlet 5a is open on both sides and the negative plate light outlet 6a is open on both sides, the positive plate light outlet 5a and the negative plate light outlet 6a form the mirror-surface chamber 7, and both form the opening 7a of the mirror-surface chamber 7 in the slow axis direction, and fig. 3 shows the opening 7a between the bar positive plates 5 and the bar negative plates 6.
In one embodiment, as shown in FIG. 4. The present embodiment provides a semiconductor laser comprising a glass insulating sheet 8. The glass insulating sheet 8 includes a daylight opening 8a opened in the slow axis direction; the profile of the daylight opening 8a is the same as that of the opening 7 a; wherein, when the bar positive electrode plates 5 and the bar negative electrode plates 6 are attached to each other through the glass insulation sheet 8, the positive electrode plate light outlet 5a, the light collection port 8a, and the negative electrode plate light outlet 6a form the mirror surface chamber 7, and are opened in the slow axis direction.
In the present embodiment, it is necessary to isolate the bar positive plates 5 and the bar negative plates 6 by means of insulating sheets. And adopt glass insulating piece 8 can not only keep apart bar positive plate 5 and bar negative plate 6, also can detect the excessive light condition in the mirror surface cavity 7. Because of the transparent nature of the glass insulating sheet 8, it can act as a medium for light propagation. Correspondingly, the profile of the lighting port 8a is the same as that of the opening 7a, and when the bar positive plates 5 and the bar negative plates 6 are attached to each other through the glass insulation sheet 8, the positive plate light outlet 5a, the lighting port 8a and the negative plate light outlet 6a form the mirror surface chamber 7, so that lighting can be performed from the mirror surface chamber 7.
In one embodiment, as shown in FIG. 3. The present embodiment provides a semiconductor laser whose bar positive electrode plate 5 includes a positive electrode plate chamfered edge 5b and whose bar negative electrode plate 6 includes a negative electrode plate chamfered edge 6 b. The positive plate chamfered edge 5b and the negative plate chamfered edge 6b are located on the same side, and the glass insulation sheet 8 protrudes relative to the positive plate chamfered edge 5b and the negative plate chamfered edge 6 b.
In the present embodiment, the light guide fiber can be more conveniently externally connected by projecting the glass insulation sheet 8 with respect to the positive electrode plate chamfered edge 5b and the negative electrode plate chamfered edge 6 b.
In one embodiment, as shown in FIG. 2. The embodiment provides a semiconductor laser, the waveguide sheet 2 of which is attached to the FAC mirror 3; the FAC mirror 3 includes a plane and a cylindrical surface opposed in the slow axis direction; the waveguide sheet 2 is attached to the plane of the FAC mirror 3, the plane and the cylindrical surface not being shown in the figure.
In one embodiment, as shown in FIG. 5. The present embodiment provides a laser beam combining method based on the semiconductor laser in any of the above embodiments. The method includes a multiplication step S100, a homogenization step S200, a collimation step S300, and a focusing step S400. In the multiplication step S100, the original laser beam supplied from one light emitting point is multiplied, and a scattered laser beam is generated. In the homogenizing step S200, the dispersed laser beam is homogenized, and a quasi-parallel light beam is generated. In the collimation step S300, the collimated parallel beam is collimated, and the parallel beam is generated. In the focusing step S400, parallel light beams, each of which is multiplied, homogenized, and collimated, are combined, and a light spot is formed in the slow axis direction.
In this embodiment, the conventional optical path is changed, and the original effects of spot homogenization and image point size amplification are achieved under the condition of reducing the optical path distance of imaging. Because the optical path distance required for the multiplication step S100, the homogenization step S200, and the collimation step S300 for one light emitting point is small. Before focusing, the respective luminous points are multiplied, homogenized and collimated separately. Instead of the traditional light path, the light path is multiplied, homogenized and collimated in a centralized manner for a plurality of light emitting points, and occupies a larger light path distance.
Accordingly, in other embodiments, the original laser beam provided by one light emitting point is multiplied by the mirror chamber 7 opened at one side, and a dispersed laser beam toward the opening direction of the mirror chamber 7 is generated. In addition, the multiplication step, the homogenization step, and the collimation step are all performed in the mirror chamber 7. Further, the dispersed laser beam is homogenized by the waveguide sheet 2, and a quasi-parallel light beam is generated. Further, the parallel light beam is collimated by the FAC mirror 3, and the parallel light beam is generated. Further, parallel light beams each multiplied, homogenized, and collimated by a plurality of light emitting points are combined by the imaging lens 4, and a spot is formed in the slow axis direction.
The above-mentioned embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, and it should be understood that the above-mentioned embodiments are only examples of the present invention and are not intended to limit the scope of the present invention. It should be understood that any modifications, equivalents, improvements and the like, which come within the spirit and principle of the invention, may occur to those skilled in the art and are intended to be included within the scope of the invention.
Claims (7)
1. The semiconductor laser is characterized by comprising a light source (1), a waveguide sheet (2), an FAC mirror (3) and an imaging lens (4) which are sequentially arranged in the slow axis direction;
the bar positive plate (5), the bar negative plate (6) and the mirror surface chamber (7) are further included;
the bar positive plates (5) and the bar negative plates (6) are attached to each other in the direction of the fast axis;
the mirror chamber (7) is formed between the bar positive plates (5) and the bar negative plates (6) and is open in the slow axis direction;
the light source (1), the waveguide sheet (2), and the FAC mirror (3) are located within the mirror surface chamber (7), and the FAC mirror (3) covers an opening (7a) that opens in the slow axis direction in the mirror surface chamber (7); the imaging lens (4) is positioned outside the mirror chamber (7);
wherein the bar positive plates (5), the bar negative plates (6), and the mirror surface chambers (7) are linearly arranged in the fast axis direction, and the light source (1), the waveguide sheet (2), and the FAC mirror (3) are disposed in any one of the mirror surface chambers (7).
2. A semiconductor laser as claimed in claim 1, characterized in that the imaging lens (4) is a semi-convex lens, the plane of which faces the location of the FAC mirror (3), and the convex surface of which faces away from the location of the FAC mirror (3).
3. A semiconductor laser according to claim 1, characterized in that a plurality of said FAC mirrors (3) are each opposed to said imaging lens (4) in the slow axis direction.
4. A semiconductor laser as claimed in claim 1, characterized in that the bar positive plate (5) comprises a positive plate light outlet (5a) open to the bar negative plate (6) in the fast axis direction and open to the waveguide sheet (2) and the FAC mirror (3) in the slow axis direction;
the bar negative plate (6) comprises a negative plate light outlet (6a) which is open to the bar positive plate (5) in the fast axis direction and is open to the waveguide sheet (2) and the FAC mirror (3) in the slow axis direction;
wherein the positive plate light outlet (5a) and the negative plate light outlet (6a) form the mirror cavity (7) and are open in the slow axis direction when the bar positive plates (5) and the bar negative plates (6) are attached to each other.
5. A semiconductor laser according to claim 4, characterized in that it further comprises a glass insulating sheet (8);
the glass insulation sheet (8) comprises a daylight opening (8a) which is open in the slow axis direction; the profile of the daylight opening (8a) is the same as the profile of the opening (7 a);
wherein the positive plate light outlet (5a), the daylight opening (8a), and the negative plate light outlet (6a) form the mirror cavity (7) and are open in the slow axis direction when the bar positive plates (5) and the bar negative plates (6) are attached to each other by the glass insulation sheet (8).
6. A semiconductor laser according to claim 5, characterized in that the bar positive plate (5) comprises a positive plate chamfered edge (5 b);
the bar negative plate (6) comprises a negative plate chamfered edge (6 b);
the positive plate chamfered edge (5b) and the negative plate chamfered edge (6b) are located on the same side, and the glass insulation sheet (8) is opposite to the positive plate chamfered edge (5b) and the negative plate chamfered edge (6b) in a protruding manner.
7. A semiconductor laser according to claim 1, characterized in that the waveguide plate (2) is attached to the FAC mirror (3);
the FAC mirror (3) comprises a plane and a cylindrical surface which are opposite in the slow axis direction;
the waveguide sheet (2) is attached to the plane of the FAC mirror (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810279738.4A CN108549156B (en) | 2018-04-01 | 2018-04-01 | Semiconductor laser device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810279738.4A CN108549156B (en) | 2018-04-01 | 2018-04-01 | Semiconductor laser device |
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| Publication Number | Publication Date |
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| CN108549156A CN108549156A (en) | 2018-09-18 |
| CN108549156B true CN108549156B (en) | 2020-09-04 |
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| CN201810279738.4A Active CN108549156B (en) | 2018-04-01 | 2018-04-01 | Semiconductor laser device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050254539A1 (en) * | 2004-05-17 | 2005-11-17 | Klimek Daniel E | Staggered array coupler |
| CN101859025A (en) * | 2010-06-03 | 2010-10-13 | 中国科学院长春光学精密机械与物理研究所 | High-power semiconductor laser optical output module capable of being reused |
| US20160380410A1 (en) * | 2015-06-26 | 2016-12-29 | Electronics And Telecommunications Research Institute | Laser beam combination system |
| CN207020349U (en) * | 2017-08-08 | 2018-02-16 | 温州泛波激光有限公司 | A kind of optical coupler for high power semiconductor laser |
| CN207052936U (en) * | 2017-08-09 | 2018-02-27 | 深圳市创鑫激光股份有限公司 | Laser |
-
2018
- 2018-04-01 CN CN201810279738.4A patent/CN108549156B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050254539A1 (en) * | 2004-05-17 | 2005-11-17 | Klimek Daniel E | Staggered array coupler |
| CN101859025A (en) * | 2010-06-03 | 2010-10-13 | 中国科学院长春光学精密机械与物理研究所 | High-power semiconductor laser optical output module capable of being reused |
| US20160380410A1 (en) * | 2015-06-26 | 2016-12-29 | Electronics And Telecommunications Research Institute | Laser beam combination system |
| CN207020349U (en) * | 2017-08-08 | 2018-02-16 | 温州泛波激光有限公司 | A kind of optical coupler for high power semiconductor laser |
| CN207052936U (en) * | 2017-08-09 | 2018-02-27 | 深圳市创鑫激光股份有限公司 | Laser |
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Effective date of registration: 20240424 Address after: 519000, 4th Floor, Comprehensive Building, No. 11 Pinggong West Road, Nanping Science and Technology Industrial Park, Zhuhai City, Guangdong Province Patentee after: Zhuhai Maizhi Laser Technology Co.,Ltd. Country or region after: China Address before: 362000 Nankeng Village, Taozhou Township, Anxi County, Quanzhou City, Fujian Province Patentee before: ANXI COUNTY TAOZHOU TOWN TONGSHENG TEA PROFESSIONAL COOPERATIVES Country or region before: China |