CN108549155B - Laser beam combining method - Google Patents
Laser beam combining method Download PDFInfo
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- CN108549155B CN108549155B CN201810279736.5A CN201810279736A CN108549155B CN 108549155 B CN108549155 B CN 108549155B CN 201810279736 A CN201810279736 A CN 201810279736A CN 108549155 B CN108549155 B CN 108549155B
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- laser beam
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
- G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Abstract
The invention provides a laser beam combining method, which comprises the multiplication steps of: multiplying an original laser beam provided from a light emitting point and generating a dispersed laser beam; a homogenization step: homogenizing the dispersed laser beam and generating a quasi-parallel beam; a collimation step: collimating the quasi-parallel light beam and generating a parallel light beam; a focusing step: and combining the parallel light beams which are multiplied, homogenized and collimated respectively by a plurality of luminous points, and forming light spots in the slow axis direction.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a laser beam combining method.
Background
The general semiconductor laser array is composed of a plurality of luminous points, and after simple optical imaging and shaping, the total light beam distribution still has strong or weak light and is not uniform enough. For this reason, patent application publication No. CN106941240A discloses a semiconductor laser that homogenizes a spot formed in the slow axis direction by providing a BAR, a FAC mirror, a focusing lens group, a waveguide sheet, and an imaging lens in the slow axis direction. And the size of the image point is enlarged by n times than that of the luminous point, so that the energy area is increased. In fact, it homogenizes the light spot mainly through the focusing lens group and the waveguide plate, and enlarges the size of the image point.
However, adding the focusing lens group and the waveguide plate in the slow axis direction obviously increases the optical path distance of the imaging. Therefore, the volume of the semiconductor laser is also increased.
Disclosure of Invention
In order to solve the technical problems, the invention provides a laser beam combining method, which changes the traditional light path and achieves the effects of light spot homogenization and image point size amplification under the condition of reducing the imaging light path distance.
In order to achieve the purpose, the invention provides the following technical scheme:
a laser beam combining method comprises
Multiplication: multiplying an original laser beam provided from a light emitting point and generating a dispersed laser beam;
a homogenization step: homogenizing the dispersed laser beam and generating a quasi-parallel beam;
a collimation step: collimating the quasi-parallel light beam and generating a parallel light beam;
a focusing step: and combining the parallel light beams which are multiplied, homogenized and collimated respectively by a plurality of luminous points, and forming light spots in the slow axis direction.
As an embodiment, in the multiplying step, the original laser beam provided by the one light emitting point is multiplied by a mirror chamber opened at one side, and the laser beam is generated to be dispersed toward an opening direction of the mirror chamber.
As an implementation, the multiplication step, the homogenization step, and the collimation step are all performed within the specular chamber.
As one possible embodiment, in the homogenizing step, the laser beam spread out is homogenized by a waveguide sheet, and the quasi-parallel light beam is generated.
As an implementation manner, in the collimating step, the quasi-parallel light beam is collimated by a FAC mirror, and the parallel light beam is generated.
As one possible implementation, in the focusing step, the parallel light beams, each of which is multiplied, homogenized and collimated by the plurality of light emitting points, are combined by the imaging lens, and the light spot is formed in the slow axis direction.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a laser beam combining method, which changes the traditional light path and achieves the effects of light spot homogenization and image point size amplification under the condition of reducing the imaging light path distance. Because the light path distance required for the multiplication step, the homogenization step, and the collimation step for one light emitting point is small. Before focusing, the respective luminous points are multiplied, homogenized and collimated separately. Instead of the traditional light path, the light path is multiplied, homogenized and collimated in a centralized manner for a plurality of light emitting points, and occupies a larger light path distance.
Drawings
Fig. 1 is an optical path diagram of a semiconductor laser in a slow axis direction and a fast axis direction according to an embodiment of the present invention;
fig. 2 is a first perspective view of a semiconductor laser according to an embodiment of the present invention;
fig. 3 is a second perspective view of a semiconductor laser provided in an embodiment of the present invention;
fig. 4 is a third perspective view of a semiconductor laser according to an embodiment of the present invention;
fig. 5 is a flowchart of a laser beam combining method according to an embodiment of the present invention.
In the figure: 1. a light source; 2. a waveguide sheet; 3. a FAC mirror; 4. an imaging lens; 5. bar positive plate; 5a, a light outlet of the positive plate; 5b, chamfering the positive plate; 6. bar negative plate; 6a, a negative plate light outlet; 6b, chamfering edges of the negative plate; 7. a mirror cavity; 7a, an opening; 8. a glass insulating sheet; 8a and a daylight opening.
Detailed Description
The above and further features and advantages of the present invention will be apparent from the following, complete description of the invention, taken in conjunction with the accompanying drawings, wherein the described embodiments are merely some, but not all embodiments of the invention.
In one embodiment, as shown in fig. 1 and 2. The present embodiment provides a semiconductor laser including a light source 1, a waveguide sheet 2, a FAC mirror 3, and an imaging lens 4 arranged in this order in the slow axis direction. Fig. 1 shows a position between the plurality of bar integration and imaging lenses 4, and the plurality of bar integration and imaging lenses 4 are arranged in the slow axis direction. Fig. 2 shows the position between one bar integrated light source 1, waveguide plate 2, and FAC mirror 3, and the light source 1, waveguide plate 2, and FAC mirror 3 are arranged in order in the slow axis direction. The direction b in the figure shows the slow axis direction. Note that the b direction in the figure shows only a single direction. In fact, the slow axis direction is either the b direction or the direction opposite to the b direction. It should be noted that the direction b in this embodiment is also the slow axis direction in any of the other embodiments below. The present embodiment provides a semiconductor laser further comprising a bar positive plate 5, a bar negative plate 6, and a mirror cavity 7. The bar positive plates 5 and the bar negative plates 6 are attached to each other in the fast axis direction. The direction a in the figure shows the fast axis direction. Note that the a direction in the figure shows only a single direction. In fact, the fast axis direction is either the a direction or the opposite direction of the a direction. It should be noted that the a direction in this embodiment is also the fast axis direction in any of the other embodiments below. And, the mirror surface chamber 7 is formed between the bar positive electrode plates 5 and the bar negative electrode plates 6, and is opened in the slow axis direction. Referring to fig. 2, the light source 1, the waveguide sheet 2, and the FAC mirror 3 are located inside the mirror chamber 7, and the FAC mirror 3 covers an opening 7a of the mirror chamber 7 that opens in the slow axis direction. Referring again to fig. 1, the imaging lens 4 is located outside the mirror chamber 7. Referring to fig. 3, a plurality of bar positive plates 5, bar negative plates 6, and mirror cavities 7 are in a linear array in the fast axis direction. In each mirror surface chamber 7, the light source 1, the waveguide sheet 2, and the FAC mirror 3 are provided.
In the present embodiment, the semiconductor laser actually includes only the bar integration and imaging lens 4. And both are arranged in the slow axis direction. Thus, the optical path distance of the image is reduced much compared to conventional optical paths. And the single bar assembly comprises a light source 1, a waveguide piece 2 and a FAC mirror 3 which are sequentially arranged in the slow axis direction. The single bar integration can homogenize the light spot and enlarge the size of the image point. Because the light source 1, the waveguide 2, and the FAC mirror 3 are located in the mirror chamber 7, the light emitting point of the light source 1 is homogenized and multiplied by means of the mirror chamber 7. The light beam formed by the light emitting point is diffused by the waveguide sheet 2 and then output from the FAC mirror 3. Therefore, a homogenized, enlarged spot size in the slow axis direction can be obtained.
In one embodiment, as shown in FIG. 1. The embodiment provides a semiconductor laser, the imaging lens 4 is a semi-convex lens, the plane of the semi-convex lens faces the position of the FAC mirror 3, and the convex surface of the semi-convex lens faces away from the position of the FAC mirror 3. In the present embodiment, a plurality of FAC mirrors 3 side by side are focused by an imaging lens 4.
In one embodiment, as shown in FIG. 1. The present embodiment provides a semiconductor laser in which a plurality of FAC mirrors 3 are each opposed to an imaging lens 4 in the slow axis direction. In the present embodiment, a plurality of FAC mirrors 3 side by side are focused by one imaging lens 4.
In one embodiment, as shown in FIG. 4. The present embodiment provides a semiconductor laser whose bar positive plate 5 includes a positive plate light outlet 5a that is open to the bar negative plate 6 in the fast axis direction and is open to the waveguide piece 2 and the FAC mirror 3 in the slow axis direction. The bar negative plate 6 includes a negative plate light outlet 6a that is open to the bar positive plate 5 in the fast axis direction and is open to the waveguide piece 2 and the FAC mirror 3 in the slow axis direction. Wherein the positive plate light-emitting ports 5a and the negative plate light-emitting ports 6a form the mirror-surface chamber 7 and are open in the slow axis direction when the bar positive plates 5 and the bar negative plates 6 are attached to each other.
In the present embodiment, since the positive plate light outlet 5a is open on both sides and the negative plate light outlet 6a is open on both sides, the positive plate light outlet 5a and the negative plate light outlet 6a form the mirror-surface chamber 7, and both form the opening 7a of the mirror-surface chamber 7 in the slow axis direction, and fig. 3 shows the opening 7a between the bar positive plates 5 and the bar negative plates 6.
In one embodiment, as shown in FIG. 4. The present embodiment provides a semiconductor laser comprising a glass insulating sheet 8. The glass insulating sheet 8 includes a daylight opening 8a opened in the slow axis direction; the profile of the daylight opening 8a is the same as that of the opening 7 a; wherein, when the bar positive electrode plates 5 and the bar negative electrode plates 6 are attached to each other through the glass insulation sheet 8, the positive electrode plate light outlet 5a, the light collection port 8a, and the negative electrode plate light outlet 6a form the mirror surface chamber 7, and are opened in the slow axis direction.
In the present embodiment, it is necessary to isolate the bar positive plates 5 and the bar negative plates 6 by means of insulating sheets. And adopt glass insulating piece 8 can not only keep apart bar positive plate 5 and bar negative plate 6, also can detect the excessive light condition in the mirror surface cavity 7. Because of the transparent nature of the glass insulating sheet 8, it can act as a medium for light propagation. Correspondingly, the profile of the lighting port 8a is the same as that of the opening 7a, and when the bar positive plates 5 and the bar negative plates 6 are attached to each other through the glass insulation sheet 8, the positive plate light outlet 5a, the lighting port 8a and the negative plate light outlet 6a form the mirror surface chamber 7, so that lighting can be performed from the mirror surface chamber 7.
In one embodiment, as shown in FIG. 3. The present embodiment provides a semiconductor laser whose bar positive electrode plate 5 includes a positive electrode plate chamfered edge 5b and whose bar negative electrode plate 6 includes a negative electrode plate chamfered edge 6 b. The positive plate chamfered edge 5b and the negative plate chamfered edge 6b are located on the same side, and the glass insulation sheet 8 protrudes relative to the positive plate chamfered edge 5b and the negative plate chamfered edge 6 b.
In the present embodiment, the light guide fiber can be more conveniently externally connected by projecting the glass insulation sheet 8 with respect to the positive electrode plate chamfered edge 5b and the negative electrode plate chamfered edge 6 b.
In one embodiment, as shown in FIG. 2. The embodiment provides a semiconductor laser, the waveguide sheet 2 of which is attached to the FAC mirror 3; the FAC mirror 3 includes a plane and a cylindrical surface opposed in the slow axis direction; the waveguide sheet 2 is attached to the plane of the FAC mirror 3, the plane and the cylindrical surface not being shown in the figure.
In one embodiment, as shown in FIG. 5. The present embodiment provides a laser beam combining method based on the semiconductor laser in any of the above embodiments. The method includes a multiplication step S100, a homogenization step S200, a collimation step S300, and a focusing step S400. In the multiplication step S100, the original laser beam supplied from one light emitting point is multiplied, and a scattered laser beam is generated. In the homogenizing step S200, the dispersed laser beam is homogenized, and a quasi-parallel light beam is generated. In the collimation step S300, the collimated parallel beam is collimated, and the parallel beam is generated. In the focusing step S400, parallel light beams, each of which is multiplied, homogenized, and collimated, are combined, and a light spot is formed in the slow axis direction.
In this embodiment, the conventional optical path is changed, and the original effects of spot homogenization and image point size amplification are achieved under the condition of reducing the optical path distance of imaging. Because the optical path distance required for the multiplication step S100, the homogenization step S200, and the collimation step S300 for one light emitting point is small. Before focusing, the respective luminous points are multiplied, homogenized and collimated separately. Instead of the traditional light path, the light path is multiplied, homogenized and collimated in a centralized manner for a plurality of light emitting points, and occupies a larger light path distance.
Accordingly, in other embodiments, the original laser beam provided by one light emitting point is multiplied by the mirror chamber 7 opened at one side, and a dispersed laser beam toward the opening direction of the mirror chamber 7 is generated. In addition, the multiplication step, the homogenization step, and the collimation step are all performed in the mirror chamber 7. Further, the dispersed laser beam is homogenized by the waveguide sheet 2, and a quasi-parallel light beam is generated. Further, the parallel light beam is collimated by the FAC mirror 3, and the parallel light beam is generated. Further, parallel light beams each multiplied, homogenized, and collimated by a plurality of light emitting points are combined by the imaging lens 4, and a spot is formed in the slow axis direction.
The above-mentioned embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, and it should be understood that the above-mentioned embodiments are only examples of the present invention and are not intended to limit the scope of the present invention. It should be understood that any modifications, equivalents, improvements and the like, which come within the spirit and principle of the invention, may occur to those skilled in the art and are intended to be included within the scope of the invention.
Claims (4)
1. A laser beam combining method is characterized by comprising
Multiplication: multiplying an original laser beam provided from a light emitting point and generating a dispersed laser beam;
a homogenization step: homogenizing the dispersed laser beam and generating a quasi-parallel beam;
a collimation step: collimating the quasi-parallel light beam and generating a parallel light beam;
a focusing step: combining the parallel light beams which are multiplied, homogenized and collimated by a plurality of luminous points respectively, and forming light spots in the slow axis direction;
wherein the multiplying, homogenizing, and collimating steps are performed in a bar-integrated mirror chamber, the bar-integration comprising bar positive plates, bar negative plates, and the mirror chamber; the bar positive plates and the bar negative plates are attached to each other in the fast axis direction; the mirror chamber is formed between the bar positive electrode plate and the bar negative electrode plate and is open in a slow axis direction; a light source, a waveguide sheet, and a FAC mirror are located within the mirror surface chamber, and the FAC mirror covers an opening that is open in a slow axis direction in the mirror surface chamber.
2. The laser beam combining method according to claim 1, wherein in the homogenizing step, the dispersed laser beam is homogenized by a waveguide sheet and the quasi-parallel light beam is generated.
3. The method according to claim 1, wherein in the collimating step, the quasi-parallel light beam is collimated by a FAC mirror and the parallel light beam is generated.
4. The laser beam combining method according to claim 1, wherein in the focusing step, the parallel light beams each of which is multiplied, homogenized, and collimated by the plurality of light emitting points, respectively, are combined by an imaging lens, and the spot is formed in the slow axis direction.
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| CN108549155B true CN108549155B (en) | 2021-02-12 |
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Effective date of registration: 20210128 Address after: 518100 5th floor, building B4, xujingchang Industrial Park, No.39, Haoye Road, Xinhe community, Fuhai street, Bao'an District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Xinghan Laser Technology Co.,Ltd. Address before: 550000 development and Design Department of Honggui laser New Technology Development Co., Ltd., No.43, south section of Xintian Avenue, Guiyang City, Guizhou Province Applicant before: Er de Ni bilge |
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