CN108538961A - 一种用于晶体硅基太阳能电池晶片定位及标记的方法 - Google Patents
一种用于晶体硅基太阳能电池晶片定位及标记的方法 Download PDFInfo
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- CN108538961A CN108538961A CN201810368543.7A CN201810368543A CN108538961A CN 108538961 A CN108538961 A CN 108538961A CN 201810368543 A CN201810368543 A CN 201810368543A CN 108538961 A CN108538961 A CN 108538961A
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- 238000000034 method Methods 0.000 title claims abstract description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 24
- 230000000007 visual effect Effects 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 7
- 238000010330 laser marking Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 230000003252 repetitive effect Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810368543.7A CN108538961B (zh) | 2018-04-23 | 2018-04-23 | 一种用于晶体硅基太阳能电池晶片定位及标记的方法 |
Applications Claiming Priority (1)
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CN201810368543.7A CN108538961B (zh) | 2018-04-23 | 2018-04-23 | 一种用于晶体硅基太阳能电池晶片定位及标记的方法 |
Publications (2)
Publication Number | Publication Date |
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CN108538961A true CN108538961A (zh) | 2018-09-14 |
CN108538961B CN108538961B (zh) | 2020-01-14 |
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CN201810368543.7A Active CN108538961B (zh) | 2018-04-23 | 2018-04-23 | 一种用于晶体硅基太阳能电池晶片定位及标记的方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111490131A (zh) * | 2020-04-26 | 2020-08-04 | 江西展宇新能科技有限公司 | 一种se电池制备处理方法 |
CN112117352A (zh) * | 2020-09-25 | 2020-12-22 | 通威太阳能(眉山)有限公司 | 一种用激光线追溯晶体硅电池生产信息的方法 |
CN112447884A (zh) * | 2019-08-29 | 2021-03-05 | 阿聚尔斯佩西太阳能有限责任公司 | 标记方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040166444A1 (en) * | 2003-02-25 | 2004-08-26 | Canon Kabushiki Kaisha | Method of producing substrate with mark, program for reading mark, and apparatus for reading mark |
CN101465393A (zh) * | 2009-01-13 | 2009-06-24 | 江西升阳光电科技有限公司 | 标示太阳能电池片编码的方法及产品 |
CN101794842A (zh) * | 2010-03-12 | 2010-08-04 | 中国电子科技集团公司第四十五研究所 | 太阳能电池片背银印刷设备视觉装置 |
CN102623548A (zh) * | 2011-01-31 | 2012-08-01 | 英稳达科技股份有限公司 | 在太阳能电池表面读写识别码的方法 |
CN105161549A (zh) * | 2015-08-25 | 2015-12-16 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池片的标记方法及太阳能电池片 |
-
2018
- 2018-04-23 CN CN201810368543.7A patent/CN108538961B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040166444A1 (en) * | 2003-02-25 | 2004-08-26 | Canon Kabushiki Kaisha | Method of producing substrate with mark, program for reading mark, and apparatus for reading mark |
CN101465393A (zh) * | 2009-01-13 | 2009-06-24 | 江西升阳光电科技有限公司 | 标示太阳能电池片编码的方法及产品 |
CN101794842A (zh) * | 2010-03-12 | 2010-08-04 | 中国电子科技集团公司第四十五研究所 | 太阳能电池片背银印刷设备视觉装置 |
CN102623548A (zh) * | 2011-01-31 | 2012-08-01 | 英稳达科技股份有限公司 | 在太阳能电池表面读写识别码的方法 |
CN105161549A (zh) * | 2015-08-25 | 2015-12-16 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池片的标记方法及太阳能电池片 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112447884A (zh) * | 2019-08-29 | 2021-03-05 | 阿聚尔斯佩西太阳能有限责任公司 | 标记方法 |
CN112447884B (zh) * | 2019-08-29 | 2023-07-04 | 阿聚尔斯佩西太阳能有限责任公司 | 标记方法 |
CN111490131A (zh) * | 2020-04-26 | 2020-08-04 | 江西展宇新能科技有限公司 | 一种se电池制备处理方法 |
CN111490131B (zh) * | 2020-04-26 | 2022-05-13 | 上饶捷泰新能源科技有限公司 | 一种se电池制备处理方法 |
CN112117352A (zh) * | 2020-09-25 | 2020-12-22 | 通威太阳能(眉山)有限公司 | 一种用激光线追溯晶体硅电池生产信息的方法 |
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Address after: 610000 No.2 entrepreneurship center, Section 2, Changcheng Road, Southwest Airport Economic Development Zone, Shuangliu District, Chengdu City, Sichuan Province Patentee after: CHENGDU DONGTENG FILM SOLAR Co.,Ltd. Address before: 610000 No.2 entrepreneurship center, Section 2, Changcheng Road, Southwest Airport Economic Development Zone, Shuangliu District, Chengdu City, Sichuan Province Patentee before: HUAFENGYUAN (CHENGDU) NEW ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210224 Address after: 101400 No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing (cluster registration) Patentee after: Beijing Huihong Technology Co.,Ltd. Address before: 610000 No.2 entrepreneurship center, Section 2, Changcheng Road, Southwest Airport Economic Development Zone, Shuangliu District, Chengdu City, Sichuan Province Patentee before: CHENGDU DONGTENG FILM SOLAR Co.,Ltd. |
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Effective date of registration: 20211021 Address after: 101400 Yanqi Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Dongjun new energy Co.,Ltd. Address before: 101400 No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing (cluster registration) Patentee before: Beijing Huihong Technology Co.,Ltd. |